Abstract: The invention relates to a coating chamber (1) for performing a vacuum-assisted coating process, in particular PVD or CVD or electric arc coating chamber or hybrid coating chamber. The coating chamber (1) comprises a heat shield (3, 31, 32, 33), which is arranged on a temperature-controllable chamber wall (2) of the coating chamber (1) and is intended for adjusting an exchange of a predeterminable amount of thermal radiation between the heat shield (3, 31, 32, 33) and the temperature-controllable chamber wall (2).

Abstract: A dual gas-bearing system includes a vacuum-preloaded gas bearing, a substrate, and a gas-bearing backer. The vacuum-preloaded gas bearing is mounted to a machine base in a fixed location. The substrate has a first surface facing the output face of the vacuum-preloaded gas bearing and an opposing second surface facing the output face of the gas-bearing backer. The gas-bearing is freely moveable in a direction normal to the output face of the vacuum-preloaded gas bearing. A gas flow through the output face of the vacuum-preloaded gas bearing imparts a first net force onto the first surface of the substrate, and a gas flow through the gas-bearing backer imparts a second net force onto the second surface of the substrate, wherein the second net force and the gap between the output face of the gas-bearing backer are independent of the position and thickness of the substrate.

Abstract: A gas-levitated substrate backing system includes a gas-levitating backer structure which is used for providing a non-contact force onto a surface. The gas-levitating backer structure has an output face, and includes a gas manifold and a porous material layer of a porous material. Gas enters the gas-levitating backer structure from a gas source, and passes through the gas manifold. A gas flow through the output face is controlled by controlling a pressure of the gas in the gas manifold. The porous material layer has an outer surface facing the surface and an inner surface facing the gas manifold, wherein at least a portion of the porous material layer is a porous membrane having a permeability-to-thickness ratio of at least 1×10-9 inches.

Abstract: A thin film deposition system includes a vacuum-preloaded gas bearing deposition head positioned in an external environment. The deposition head has a vertically-oriented output face including a plurality of source openings through which gaseous materials are supplied and one or more exhaust openings. An exhaust pressure at the exhaust openings is less than an ambient pressure, and a source pressure at the source openings is greater than the exhaust pressure, with the pressure at the outermost source openings being greater than the ambient pressure. A substrate positioner applies a vertical force onto a substrate unit, the vertical force passing through a center of gravity of the substrate unit. A motion control system moves the substrate positioner, thereby moving the substrate unit relative to the output face in an in-track direction without constraining the motion of the substrate unit in a direction normal to the output face of the deposition head.

Abstract: Described herein are articles, systems and methods where a plasma resistant coating is deposited onto a surface of a porous chamber component and onto pore walls within the porous chamber component using an atomic layer deposition (ALD) process. The porous chamber component may include a porous body comprising a plurality of pores within the porous body, the plurality of pores each comprising pore walls. The porous body is permeable to a gas. The plasma resistant coating may have a thickness of about 5 nm to about 3 ?m, and may protect the pore walls from erosion. The porous body with the plasma resistant coating remains permeable to the gas.

Abstract: Described herein are articles, systems and methods where a plasma resistant coating is deposited onto a surface of a porous chamber component and onto pore walls within the porous chamber component using an atomic layer deposition (ALD) process. The porous chamber component may include a porous body comprising a plurality of pores within the porous body, the plurality of pores each comprising pore walls. The porous body is permeable to a gas. The plasma resistant coating may comprise a solid solution of Y2O3—ZrO2 and may have a thickness of about 5 nm to about 3 ?m, and may protect the pore walls from erosion. The porous body with the plasma resistant coating remains permeable to the gas.

Abstract: In a substrate processing method for processing a substrate by alternately performing a processing gas supply step of supplying a processing gas for processing the substrate into a processing chamber which accommodates the substrate and to which a gas exhaust line is connected and a replacement gas supply step of supplying a replacement gas for replacing an atmosphere in the processing chamber into the processing chamber multiple times, a ballast gas is introduced into the gas exhaust line when the processing gas supply step is performed.

Abstract: A method of forming a thin film on a substrate which includes a step of contacting a surface with a precursor compound having a transition metal and one or more alkyl-1,3-diazabutadiene ligands is provided. The resulting modified surface is then contacted with an activating compound.

Abstract: A modular thin film deposition system, includes a machine base, a deposition head for depositing a thin film of material onto a process surface of a substrate, a motion actuator including a fixed portion and a moveable portion, and one or more interchangeable substrate positioner modules adapted to mount on the moveable portion of the motion actuator. The interchangeable substrate positioner modules include kinematic mounting features that engage with corresponding kinematic mounting features on the moveable portion of the motion actuator. The motion actuator moves the interchangeable substrate positioner in a motion direction, thereby moving the substrate in an in-track direction in a plane parallel to the output face of the deposition head during deposition of the thin film of material onto the process surface of the substrate.

Abstract: A thin film deposition system includes a vacuum-preloaded gas bearing deposition head positioned in an external environment having an ambient pressure, the deposition head having an output face including a plurality of source openings through which gaseous materials are supplied and one or more exhaust openings. An exhaust pressure at the exhaust openings is less than ambient pressure, and a source pressure at the source openings is greater than that at the exhaust openings, with the pressure at the outermost source openings being greater than ambient pressure. A motion control system moves a substrate unit over the output face in the in-track direction without constraining its motion in a direction normal to the output face to a point where a center of gravity of the substrate unit is beyond the first edge of the output face.

Abstract: A material deposition system for depositing a material on a surface of a substrate includes a deposition head having an output face configured to simultaneously supply a plurality of gaseous materials in a sequence of gas zones. The gas zones include a deposition zone located between first and second inert zones. The deposition zone includes a first reactant zone adjacent to the first inert zone, a last reactant zone adjacent to the second inert zone, and one or more purge gas zones. A motion actuator moves a substrate over the output face with a repeating motion profile that prevents a region of active deposition on the substrate from being exposed to the external environment prior to having achieved a final material deposition amount. The repeating motion profile include a forward motion portion and a backward motion portion which is less than the forward distance by an ooch distance.

Abstract: A deposition unit for a thin film deposition system includes one or more of deposition heads and a gas manifold. Each deposition head includes an output face having a plurality of gas openings, a mounting face including a plurality of deposition head gas ports, and connecting gas passages. The gas manifold includes an attachment face having one or more interface regions, each interface region including a plurality of manifold gas ports in positions corresponding to the deposition head gas ports. Each deposition head is fastened to the gas manifold in an interface region with sealing elements positioned between the manifold gas ports and the deposition head gas ports. The mounting face of each deposition head and the attachment face of the gas manifold include alignment features for aligning each deposition head with the interface region of the gas manifold.

Abstract: A deposition unit for a thin film deposition system includes a plurality of deposition heads. Each deposition head includes an output face having a plurality of gas slots extending in a cross-track direction. Two of the deposition heads are positioned adjacent to each other in the cross-track direction such that the adjacent deposition heads have abutting ends. The abutting ends of the adjacent deposition heads include interlocking structures having an alternating sequence of protrusions and recesses such that the protrusions on the abutting end of one adjacent deposition head fit into the recesses on the abutting end of the other adjacent deposition head. The gas slots extend into the protrusions on the abutting ends such that in an overlap region, the gas slots of one adjacent deposition head overlap with the gas slots of the other adjacent deposition head.

Abstract: A gas-levitated substrate backing system includes a gas-levitating backer structure which is used for providing a non-contact force onto a surface of a substrate. The gas-levitating backer structure has an output face including three or more output openings. A gas source provides a gas flow through the output openings to levitate the gas-levitating backer structure over the surface of the substrate. The gas-levitating backer structure is freely moveable in a direction normal to the surface of the substrate.

Abstract: A thin film deposition system includes a web guide system having a plurality of web guides defining a web transport path for the web of substrate. The web guide system includes a moveable portion including first and second moveable-position web guides. A web transport control system advances the web of substrate along the web transport path at a web advance velocity. A deposition head is located along the web transport path between the first and second moveable-position web guides. A motion actuator system synchronously moves a position of the first and second moveable-position web guides such that they move forward and backward according to a defined oscillating motion pattern while maintaining a constant distance between the first and second moveable-position web guides, thereby causing a portion of the web of media adjacent to the deposition head to move forward and backward in an in-track direction.

Abstract: A method for delivering vaporized precursor in a substrate processing system using a vapor delivery system includes (a) selectively supplying push gas to an inlet of an ampoule storing liquid and vaporized precursor during a deposition period of a substrate; (b) measuring a pressure of the push gas and the vaporized precursor at an outlet of the ampoule during the deposition period; (c) determining a maximum pressure during the deposition period; (d) determining an integrated area for the deposition period based on a sampling interval and the maximum pressure during the sampling interval; and (e) repeating (a), (b), (c) and (d) for a plurality of the deposition periods for the substrate.

Abstract: A device and a method for depositing organic layers onto a substrate includes a process gas source with a temperature-controlled evaporator, and a carrier gas supply line which opens into the evaporator in order to supply a carrier gas flow into a temperature-control led first transport line. A first dilution gas supply line, which opens into the first transport line, supplies a dilution gas flow into the first transport line. The device also comprises a temperature-controlled gas inlet element fluidly connected to the first transport line. A gaseous starting material can be supplied into a processing chamber via the gas inlet element. A substrate is disposed on a temperature-controlled susceptor located in the processing chamber, and a layer is grown on the substrate using the gaseous starting material.

Abstract: A composite structural component is disclosed. The composite structural component can include a lattice structure, a casing disposed about at least a portion of the lattice structure, and a skin adhered to a surface of the casing. The lattice structure and the casing can be formed of a polymeric material and the skin can be formed of a metallic material. A method of manufacturing a composite structural component is disclosed. The method can include creating a casing of a polymeric material and creating a lattice structure of a polymeric material disposed about at least a portion of the casing. The method can include sealing the porosity of the casing and lattice structure. The method can include adhering a skin of a metallic material to at least a portion of the casing. At least one of creating a lattice structure and creating a casing comprises utilizing an additive manufacturing process.

Abstract: The present disclosure presents a method and a system for modifying a surface of a substrate. The method includes an act of abrasive blasting of a part of the surface of the substrate. In the abrasive blasting, an abrasive media is provided to the part of the surface. The abrasive media is carried to the part by a first carrier. The abrasive media collides with the part of the surface and causes abrasion to the part of the surface. In the method, the first carrier includes steam. The steam of the first carrier heats the part of the surface.

Abstract: A method of protecting slurry handling equipment is presented which involves (a) identifying one or more types of wear events (erosion, abrasion, corrosion) to which a surface of the slurry handling equipment is susceptible during operation; (b) estimating the severity of each type of wear event the surface will experience during operation; and (c) applying one or more of a thermal spray coating comprising a metal carbide or a metal nitride, and an erosion resistant organic coating to the surface. The types and severity of the wear events are predicted using one or more computational fluid dynamics models, and the application of either or both of the thermal spray coating and the erosion resistant organic coating to the surface is predicated on the types of wear events identified and their estimated severity. In addition, slurry handling equipment and components thereof protected using the method are provided.

Abstract: A system and method for removing metal from a substrate in a controlled manner is disclosed. The system includes a chamber, with one or more gas inlets to allow the flow of gasses into the chamber, at least one exhaust pump, to exhaust gasses from the chamber, and a heater, capable of modifying the temperature of the chamber. In some embodiments, one or more gasses are introduced into the chamber at a first temperature. The atoms in these gasses chemically react with the metal on the surface of the substrate to form a removable compound. The gasses are then exhausted from the chamber, leaving the removable compound on the surface of the substrate. The temperature of the chamber is then elevated to a second temperature, greater than the sublimation temperature of the removable compound. This increased temperature allows the removable compound to become gaseous and be exhausted from the chamber.

Abstract: According to an embodiment, a substrate treatment apparatus includes a noble metal-containing member having a concave-convex surface including a noble metal, and a liquid chemical supply member to supply a liquid chemical. While convex portions of the concave-convex surface are contact with a predetermined surface of a metal, the liquid chemical is supplied onto the surface of the metal to remove the metal with etching.

Abstract: This invention provides a magnesium laminate material with high heat radiation performance, reduced weight, higher strength, and excellent molding processability. Such metal laminate material has a three-layer-structure of a first stainless steel layer, a magnesium layer and a second stainless steel layer, wherein tensile strength (TS) is 200 to 430 MPa, elongation (EL) is 10% or more, and the surface hardness (Hv) of the first stainless steel layer and the second stainless steel layer is 300 or less.

Abstract: Compounds and compositions are used as corrosion inhibitors for pipelines for crude oil containing water with high salt concentrations. The inhibitors are ionic liquids, imidazoles, benzotriazoles, and mixtures thereof. The composition includes two or more members of the inhibitors with a solvent. The inhibitors reduce corrosion of metallic surfaces of the pipelines containing crude oil having 0.2 and 40 wt % water, 10,000 to 70,000 ppm salt, and 9 to 600 ppm hydrogen sulfide. A synergic effect is provided by two or more different inhibitors. This synergy is derived from interactions with the metallic surface, among themselves or with the corrosive medium depending on the chain length, to inhibit the corrosion with decrease of the formulation dose. The composition can be a ternary formulation of the three families or two components of one family and a third component of a different family.

Abstract: Treating carbon steel tubing includes contacting the carbon steel tubing with a first treatment solution including a salt; corroding the carbon steel tubing with the salt to yield a corroded surface on the carbon steel tubing; contacting the corroded surface on the carbon steel tubing with a second treatment solution comprising sulfide ions; and forming an iron sulfide layer on the corroded surface of the carbon steel tubing by chemically bonding the sulfide ions in the second treatment solution with iron in the carbon steel tubing. In some cases, the first treatment solution also includes sulfide ions, and the iron sulfide layer is formed by contacting the carbon steel tubing with the first treatment solution.

Abstract: A carbon dioxide conversion system for an environment includes a first gas-liquid contactor-separator downstream of the environment; an electrochemical conversion cell downstream of the first gas-liquid contactor-separator; and a cleaned ionic liquid storage intermediate the first gas-liquid contactor-separator and the electrochemical conversion cell.

Abstract: A cathode part of an electrochemical reaction device comprises a conductor, a porous body, a reduction catalyst, an electrolytic solution flow path, a first flow path, and a second flow path. The conductor has a conductive surface. The porous body includes a first surface, a second surface, a first porous portion, and a second porous portion. The first surface is in contact with the conductive surface. A contact angle between an inner wall of the second porous portion and water is higher than a contact angle between an inner wall of the first porous portion and the water. The reduction catalyst is supported on the second surface to reduce carbon dioxide. The electrolytic solution flow path faces the reduction catalyst. The first flow path faces the first porous portion. The second flow path faces the second porous portion.

Abstract: An anode of an electrochemical reaction device includes: a stack having a conductive substrate and an oxide layer on the conductive substrate, the conductive substrate containing nickel or iron, and the oxide layer containing a nickel oxide or an iron oxide; and an oxidation catalyst layer disposed on the stack and containing an oxidation catalyst to oxidize water. A Raman spectrum of the oxide layer measured by a Raman spectroscopic analysis has a peak at a Raman shift of 500 cm?1 or more and 600 cm?1 or less or at a Raman shift of 1270 cm?1 or more and 1370 cm?1 or less.

Abstract: An electrode (10) is disclosed. The electrode (10) comprises an electrode substrate (20). A layer of TiOx (30, 40) with a total thickness in the range of between 40-200 ?m is present on at least one surface of the electrode substrate (20) and a porosity of layer of TiOx (30, 40) is below 15%. An electro-catalytic layer (50) comprising oxides of ruthenium and cerium according comprising at least 50 molar % ruthenium oxides is present on layer of TiOx (30, 40) and wherein x is in the range 1-2 for the layer of TiOx. A process for the manufacture of the electrode (10) is disclosed as are uses thereof.

Abstract: According to one embodiment, a system includes a deposition electrode, where the deposition electrode is configured to move in a z direction and the deposition electrode is configured to move during deposition, a counter electrode, where the counter electrode is a photoconductive electrode, a mechanism for directing a light onto the photoconductive electrode, a chamber, and a power source for applying a voltage differential across the electrodes. In addition, the deposition electrode and the counter electrode are positioned in the chamber and are oriented opposite from one another. Moreover, the mechanism for direction light is configured to move the light in an x direction and/or a y direction, where the x direction is oriented perpendicular to the y direction and x-y directions are in a plane that is perpendicular to the z direction.

Abstract: According to one embodiment, a method for fabricating a 3D model of different materials includes positioning a moveable deposition electrode at a distance from a photoconductive electrode, directing light onto the photoconductive electrode in a first pattern while simultaneously applying a voltage differential across the electrodes. Particles from a solution are deposited to form a first layer on the deposition electrode according to the first pattern. The method repeats, for a given number N of layers of the 3D model, the following operations N-1 times: changing or maintaining a composition of the solution, moving the moveable deposition electrode in a z direction in steps about equal to a thickness of each deposited layer, directing light onto the photoconductive electrode in another pattern while simultaneously applying another voltage differential across the electrodes. Particles from the solution are deposited to form another layer above the deposition electrode according to another pattern.

Abstract: This invention concerns a method for galvanic metal deposition of a substrate using an anode and an electrolyte, wherein from each of a plurality of electrolyte nozzles a locally confined electrolyte stream is directed towards a part of a substrate surface which is to be treated, wherein a relative movement is carried out between the substrate and the electrolyte stream during deposition, characterized in that a first movement is carried out along a first path, wherein at least along a part of the first path a second movement is carried out along a second path, wherein the first and the second movement each are relative movements between the electrolyte stream and the substrate. Further, the invention concerns a substrate holder reception apparatus and an electrochemical treatment apparatus.

Abstract: There is provided a steel cord including a steel wire and a plating layer that covers the steel wire and has Cu, Zn, and Co, wherein Cu and Zn are alloyed and a region covered with Co and a region not covered with Co are mixed on the outermost surface of the plating layer.

Abstract: Layer-by-layer thickness control of an electroplated film can be achieved by using a cyclic deposition process. The cyclic process involves forming a layer (or partial layer) of hydrogen on a surface of the substrate, then displacing the layer of hydrogen with a layer of metal. These steps are repeated a number of times to deposit the metal film to a desired thickness. Each step in the cycle is self-limiting, thereby enabling atomic level thickness control.

Abstract: A coating for protecting a base material from wear and corrosion includes a first layer deposited directly onto an outer surface of the base material. In addition, the coating includes a second layer deposited directly onto the first layer. The first layer is positioned between the base material and the second layer. The first layer includes chromium having a first micro-crack density and the second layer comprises chromium having a second micro-crack density that is less than the first micro-crack density.

Abstract: Electrochemical device or photo-electrochemical device comprising an electrolyte containing a bistriflimide anion, hereafter named as TFSI—, at least two electrodes, each of these electrodes being in contact with a current collector comprising a metal support characterized in that at least one electrode has a current collector the metal support of which comprises an electro-active surface which is functionalized with linear or branched fluorinated carbon chains, such as perfluoroalkyl chains, in the form of a molecular layer which improves the corrosion resistance of said functionalized surface compared to a non-functionalized surface, wherein not impairing the passage of electrons between said electrode and its current collector, the functionalized surface being at the interface between said electrode and its current collector.

Abstract: The invention relates to a corrosion protection layer system for metal surfaces, said layer system comprising as the two top most layers: a) a discontinuous nickel-phosphorus layer and b) a chromium layer plated from a trivalent chromium electrolyte solution, as well as to a method of producing such a layer system. The inventive layer system is capable to combine the good corrosion resistance of the nickel-phosphorus layer against sodium chloride with the protective power of the chromium layer from the trivalent plating process against magnesium and calcium salts, especially without the need for any post-treatment.

Abstract: Various embodiments herein relate to methods and apparatus for electroplating metal onto substrates. In various cases, a reference electrode may be modified to promote improved electroplating results. The modifications may relate to one or more of the reference electrode's shape, position, relative conductivity compared to the electrolyte, or other design feature. In some particular examples the reference electrode may be dynamically changeable, for example having a changeable shape and/or position. In a particular example the reference electrode may be made of multiple segments. The techniques described herein may be combined as desired for individual applications.

Abstract: Various embodiments herein relate to methods and apparatus for electroplating metal onto substrates. In various cases, a reference electrode may be modified to promote improved electroplating results. The modifications may relate to one or more of the reference electrode's shape, position, relative conductivity compared to the electrolyte, or other design feature. In some particular examples the reference electrode may be dynamically changeable, for example having a changeable shape and/or position. In a particular example the reference electrode may be made of multiple segments. The techniques described herein may be combined as desired for individual applications.

Abstract: A determination is made of a real-time azimuthal position of a notch alignment feature located on a support surface of a substrate holder relative to a fixed reference ray extending perpendicularly away from a rotational axis of the substrate holder as the substrate holder rotates about the rotational axis. A determination is made of an approach initiation azimuthal position of the notch alignment feature relative to the fixed reference ray at which vertical movement of the substrate holder should initiate in order to have the notch alignment feature located at a prescribed azimuthal position relative to the fixed reference ray when the substrate holder reaches a prescribed vertical position. A determination is made of a time delay required to have the notch alignment feature located at the approach initiation azimuthal position. Vertical movement of the substrate holder is initiated in accordance with the determined time delay.

Abstract: The invention relates to a method for the adjustment of the lightness L* of electrolytically deposited chromium-finishes on workpieces obtained by an electroplating bath comprising at least chromium(III)-ions and sulfur containing organic compounds, wherein the concentration of the sulfur containing organic compounds in the bath are adjusted by passing at least part of the bath composition through an activated carbon filter. Furthermore, the invention is directed to dark chrome coatings comprising a defined concentration gradient of deposited sulfur containing organic compounds.

Abstract: A plating method capable of saving a substrate in an event of a failure of a transporter, a plating tank, or other component when the substrate is being plated is disclosed. The plating method includes: transporting a plurality of substrates to a plurality of plating tanks, respectively, with a transporter; immersing the plurality of substrates in a plating solution held in the plurality of plating tanks to plate the plurality of substrates; detecting a failure that has occurred in the transporter or a post-processing tank; and replacing the plating solution in the plurality of plating tanks with a preservative liquid to thereby immerse the plurality of substrates in the preservative liquid.

Abstract: A method for cleaning a surface of an aluminum or aluminum alloy body by immersing the surface in a basic aqueous electrolyte formed essentially from dissolved trisodium phosphate, flowing DC current through the electrolyte and the body for cleaning, and then removing the body from the electrolyte. An additional cleaning step, which may include ultrasonic cleaning, may be performed to remove loose matter adhering to the body after the electrolytic cleaning.

Abstract: A single-crystal manufacturing apparatus including: at least two different melt surface position measuring means for measuring a melt surface position of a material melt; controlling means for controlling the melt surface position based on the measured melt surface position; and determining means for determining whether a measurement abnormality has occurred in the melt surface position measuring means, the apparatus being characterized in that the melt surface position is measured by the plurality of melt surface position measuring means at the same time, one melt surface position measuring means adopted for control over the melt surface position is selected from the plurality of melt surface position measuring means, and the melt surface position measuring means adopted for control over the melt surface position is switched to another melt surface position measuring means when the determining means determines that a measurement abnormality has occurred in the selected melt surface measuring means.

Abstract: The present invention provides a method of epitaxial growth of an SiC thin film by the thermal CVD process wherein it is possible to improve the in-plane uniformity of the doping density and possible to grow an SiC thin film by a uniform thickness. This method is an epitaxial growth method for silicon carbide characterized by comprising adjusting a ratio of the hydrocarbon gas and silicon feedstock gas so as to become, by C/Si ratio, 0.5 to 1.5 in range, making the hydrocarbon gas contact a hydrocarbon decomposition catalyst heated to 1000° C. to 1200° C. so as to make at least part of the hydrocarbon gas break down into carbon and hydrogen, and supplying carbon contained in the hydrocarbon gas and silicon contained in the silicon feedstock gas to the silicon carbide single crystal substrate.

Abstract: A method of fabricating a plurality of single crystal CVD diamonds, the method comprising: coating a carrier substrate with a layer of polycrystalline CVD diamond material; bonding a plurality of single crystal diamond substrates to the layer of polycrystalline CVD diamond material on the carrier substrate; growing single crystal CVD diamond material on the plurality of single crystal diamond substrates to form a plurality of single crystal CVD diamonds; and separating the plurality of single crystal CVD diamonds from the layer of polycrystalline CVD diamond material on the carrier substrate and any polycrystalline CVD diamond material which has grown between the plurality of single crystal CVD diamonds to yield a plurality of individual single crystal CVD diamonds.

Abstract: A protein crystal comprising a first protein crystal having available space in the lattice, wherein a second protein crystal and a moiety can be accommodated in the available space in the lattice. The first and second proteins are co-expressed from one or more nucleic acid constructs. In a preferred embodiment, the first protein is the p21-activated kinase PAK4, the second protein is the PAK4 kinase inhibitor Inka1, and the moiety comprises a reporter molecule such as fluorescent proteins or tags and is fused to the iBox or iBox-C or Inka1. Preferably the crystal is formed in cellulo. Also provided is a fusion protein comprising the first protein and the second protein, wherein upon crystallisation the second protein fits within the available space in the lattice of the first protein, along with the moiety. Methods for producing the protein crystal are also disclosed.

Abstract: Nitrogen-doped CZ silicon crystal ingots and wafers sliced therefrom are disclosed that provide for post epitaxial thermally treated wafers having oxygen precipitate density and size that are substantially uniformly distributed radially and exhibit the lack of a significant edge effect. Methods for producing such CZ silicon crystal ingots are also provided by controlling the pull rate from molten silicon, the temperature gradient and the nitrogen concentration. Methods for simulating the radial bulk micro defect size distribution, radial bulk micro defect density distribution and oxygen precipitation density distribution of post epitaxial thermally treated wafers sliced from nitrogen-doped CZ silicon crystals are also provided.

Abstract: Nitrogen-doped CZ silicon crystal ingots and wafers sliced therefrom are disclosed that provide for post epitaxial thermally treated wafers having oxygen precipitate density and size that are substantially uniformly distributed radially and exhibit the lack of a significant edge effect. Methods for producing such CZ silicon crystal ingots are also provided by controlling the pull rate from molten silicon, the temperature gradient and the nitrogen concentration. Methods for simulating the radial bulk micro defect size distribution, radial bulk micro defect density distribution and oxygen precipitation density distribution of post epitaxial thermally treated wafers sliced from nitrogen-doped CZ silicon crystals are also provided.

Abstract: Disclosed is a substrate treating apparatus comprising a wafer chuck on which a substrate is placed, an injector unit on a side of the wafer chuck and injecting process gases that include a first gas and a second gas, and a gas supply unit supplying the process gases to the injector unit. The gas supply unit comprises first and second gas supply sources that respectively accommodate the first and second gases, first and second gas supply lines that respectively connect the first and second gas supply sources to the injector unit, and first and second heating units that are respectively disposed on the first and second gas supply lines. The first heating units disposed on the first gas supply line have a density per unit length greater than the density per unit length of the second heating units disposed on the second gas supply line.