Abstract: A device includes a receiver configured to receive an audio frame of an audio stream. The audio frame includes information that indicates a coded bandwidth of the audio frame. The device also includes a decoder configured to generate first decoded speech associated with the audio frame and to determine an output mode of the decoder based at least in part on the information that indicates the coded bandwidth. A bandwidth mode indicated by the output mode of the decoder is different than a bandwidth mode indicated by the information that indicates the coded bandwidth. The decoder is further configured to output second decoded speech based on the first decoded speech. The second decoded speech is generated according to an output mode of the decoder.

Abstract: A method of building a speech conversion system uses target information from a target voice and source speech data. The method receives the source speech data and the target timbre data, which is within a timbre space. A generator produces first candidate data as a function of the source speech data and the target timbre data. A discriminator compares the first candidate data to the target timbre data with reference to timbre data of a plurality of different voices. The discriminator determines inconsistencies between the first candidate data and the target timbre data. The discriminator produces an inconsistency message containing information relating to the inconsistencies. The inconsistency message is fed back to the generator, and the generator produces a second candidate data. The target timbre data in the timbre space is refined using information produced by the generator and/or discriminator as a result of the feeding back.

Abstract: A timbre vector space construction system for building a timbre vector space has an input. The input is configured to receive a first speech segment in a first voice and a second speech segment in a second voice. The system also includes a temporal receptive field to transform the first speech segment into a first plurality of analytical segments, and the second speech segment into a second plurality of analytical segments. Each of the first plurality of smaller analytical segments, and each of the second plurality of analytical segments have a frequency distribution that represents a different portion of the timbre data of the respective voices. The system also includes a machine learning system configured to map the first voice relative to the second voice in the timbre vector space as a function of the frequency distribution of the first plurality of analytical segments the second plurality of analytical segments.

Abstract: A method of building a new voice having a new timbre using a timbre vector space includes receiving timbre data filtered using a temporal receptive field. The timbre data is mapped in the timbre vector space. The timbre data is related to a plurality of different voices. Each of the plurality of different voices has respective timbre data in the timbre vector space. The method builds the new timbre using the timbre data of the plurality of different voices using a machine learning system.

Abstract: An integrated sensor-array processor and method includes sensor array time-domain input ports to receive sensor signals from time-domain sensors. A sensor transform engine (STE) creates sensor transform data from the sensor signals and applies sensor calibration adjustments. Transducer time-domain input ports receive time-domain transducer signals, and a transducer output transform engine (TTE) generates transducer output transform data from the transducer signals. A spatial filter engine (SFE) applies suppression coefficients to the sensor transform data, to suppress target signals received from noise locations and/or amplification locations. A blocking filter engine (BFE) applies subtraction coefficients to the sensor transform data, to subtract the target signals from the sensor transform data. A noise reduction filter engine (NRE) subtracts noise signals from the BFE output. An inverse transform engine (ITE) generates time-domain data from the NRE output.

Abstract: The invention provides a method for detecting music in audio speech processing by decomposing an audio signal into component signals in one or more bandwidths. The invention then detects energy levels across preselected time and frequency windows within the narrowest bandwidth components. A predetermined number of detections at predetermined detection levels will result in the likely characterization of music being present in that window.

Abstract: A file system executing on a computing system is configured to efficiently manage and store data on a tiered storage volume using hybrid media that includes a shingled magnetic recording (SMR) data store, such as an SMR disk drive, and a randomly-writable data store, such as a conventional magnetic recording (CMR) disk or solid-state drive (SSD) using flash memory. Write operations in the SMR disk are performed in a sequential manner to optimize storage density on the disk. The file system utilizes logic incorporated in an allocator that monitors I/O operations on the computing system—for example, write requests from applications executing on the system—to determine if a request is associated with file data or metadata. If the request is for metadata, then the allocator allocates space on the SSD/CMR for the metadata, and if the request is for file data, then space is allocated on the SMR disk.

Abstract: According to an embodiment, a magnetic head includes a magnetoresistive element, a first magnetic shield and a second magnetic shield provided on a trailing side and a leading side of the magnetoresistive element in a down-track direction, and side shields on both sides of the magnetoresistive element, respectively, in a track-width direction. At least one of the side shields includes a trailing-side portion having magnetic permeability and a leading-side portion having magnetic permeability different from that of the trailing-side portion.

Abstract: In a disk drive having a flexible circuit tail that is routed within a recess in the actuator arm, a dielectric spacer is added to the top of the tail in order to space the circuit traces within the tail further away from the electrically conductive actuator arm, and to make more repeatable that spacing. The added spacing reduces electrical coupling and thus increases the bandwidth of the circuit. The spacer can be in the form of a section of the same viscoelastic material that is used elsewhere as a vibration dampener on the suspension, the viscoelastic material being adhered to the tail before the tail is inserted within the recess. Alternatively, the spacer can be a thickened region of the flexible circuit covercoat in the area where the tail will reside within the recess.

Abstract: A method and system for automatically initiating recordation of a conversation over a mobile communication device using a proximity sensor.

Abstract: A memory system includes a memory device, a command clock (CK_t clock) that provides a first clock signal at a first frequency, and a data path clock (WCK_t clock) that provides a second clock signal at a second frequency different than the first frequency. Data path circuitry is synchronized with the WCK_t clock and provides an error detection code (EDC) hold pattern during an idle state. EDC hold pattern synchronization logic synchronizes a start of transmission of the EDC hold pattern synchronous to the CK_t clock.

Abstract: A method includes displaying, by a video display device, to a user of a client device, a broadcast of an audiovisual data feed. The method includes receiving, by the client device, an identification of a portion of the audiovisual data feed. The method includes generating, by the client device, a time-constrained video from the identified portion of the audiovisual data feed.

Abstract: A 360 video is presented in a three dimensional (3D) environment. Rather than simply stacking graphics in two dimensions, graphics are placed using both 3D models and textures. The 3D models may be altered so that the texture is aligned in three dimensions into the 360 video space. An instance of a 3D model combined with a key and fill texture form a group. The group has a 3D orientation and placement so that the group as aligned into the 360 degree video space may not be visible from all user look directions. The inserted groups, including live video as well as static graphics, may be projected into either mono or stereo views to give the viewer a sense of space, depth, and orientation.

Abstract: Embodiments relate generally to semiconductors and memory technology, and more particularly, to systems, integrated circuits, and methods to implement a memory architecture that includes local bit lines for accessing subsets of memory elements, such as memory elements based on third dimensional memory technology. In at least some embodiments, an integrated circuit includes a cross-point memory array formed above a logic layer. The cross-point memory array includes X-lines and Y-lines, of which at least one Y-line includes groups of Y-line portions. Each of the Y-line portions can be arranged in parallel with other Y-line portions within a group of the Y-line portions. Also included are memory elements disposed between a subset of the X-lines and the group of the Y-line portions. In some embodiments, a decoder is configured to select a Y-line portion from the group of Y-line portions to access a subset of the memory elements.

Abstract: Even when a driven circuit has a large-scale load, a small-scale step-down driver circuit can supply an internal potential to the driven circuit at high speed. A semiconductor integrated circuit device includes a step-down driver circuit which supplies, to a driven circuit to be driven by an internal potential lower than an external potential supplied from an external power supply, the internal potential. The step-down driver circuit includes an NMOS transistor having a drain coupled to an external power supply terminal to be coupled to the external power supply and a source to be coupled to a voltage supply point of the driven circuit and a driver circuit to drive the gate of the NMOS transistor.

Abstract: Memories and methods for performing an atomic memory operation are disclosed, including a memory having a memory store, operation logic, and a command decoder. Operation logic can be configured to receive data and perform operations thereon in accordance with internal control signals. A command decoder can be configured to receive command packets having at least a memory command portion in which a memory command is provided and data configuration portion in which configuration information related to data associated with a command packet is provided. The command decoder is further configured to generate a command control signal based at least in part on the memory command and further configured to generate control signal based at least in part on the configuration information.

Abstract: Various implementations described herein refer to an integrated circuit having level shifting circuitry and bypass switching circuitry. The level shifting circuitry is arranged for translating an input signal from a first voltage domain to an output signal for a second voltage domain. The bypass switching circuitry is arranged for activating and deactivating the level shifting circuitry based on a bypass control signal.

Abstract: A memory storage apparatus including a plurality of word lines, a plurality of bit lines, a memory cell array, and a memory controller is provided. The memory cell array includes a plurality of memory cells. The memory cells are configured to store data. Each of the memory cells is coupled to the corresponding word line and the corresponding bit line. The memory controller is configured to perform a read operation to the memory cell array. The memory controller performs a pre-charge operation to part or all of the bit lines when the memory controller enables the word lines. In addition, an operating method of a memory storage apparatus is also provided.

Abstract: A calibration circuit coupled to a sense amplifier circuit may be configured to determine a response time of the sense amplifier circuit relative to a pulse sequence. Based on the determined response time, the calibration circuit may be configured to set a level of a biasing current to a desired level in order to control the response time of the sense amplifier circuit.

Abstract: A method of controlling on-die termination (ODT) in a multi-rank system including a plurality of memory ranks is provided. The method includes: enabling ODT circuits of the plurality of memory ranks into an initial state when the multi-rank system is powered on; enabling the ODT circuits of a write target memory rank and non-target memory ranks among the plurality of memory ranks during a write operation; and disabling the ODT circuit of a read target memory rank among the plurality of memory ranks while enabling the ODT circuits of non-target memory ranks among the plurality of memory ranks during a read operation.

Abstract: A semiconductor system may include a controller configured to provide a first external clock and a control signal to a semiconductor device, and the semiconductor device configured to transmit/receive external data and a plurality of second external clocks to/from the controller, wherein the plurality of second external clocks comprise a third primary external clock and a third secondary external clock, and the semiconductor device transmits both of the third primary external clock and the third secondary external clock to the controller or to transmits one of the third primary external clock and the third secondary external clock to the controller, based on an operation select signal.

Abstract: Precharging circuits and techniques are presented for use with magnetic memory devices in order to speed up access to the memory cells for reading and writing. Including precharging in the sense amplifiers used to access the memory cells enables self-referenced read operations to be completed more quickly than is possible without precharging. Similarly, precharging can also be used in conjunction with write-back operations in order to allow the data state stored by magnetic tunnel junctions included in the memory cells to be changed more rapidly.

Abstract: Described are apparatuses for improving resistive memory energy efficiency. An apparatus performs data-driven write to make use of asymmetric write switch energy between write0 and write1 operations. The apparatus comprises: a resistive memory cell coupled to a bit line and a select line; a first pass-gate coupled to the bit line; a second pass-gate coupled to the select line; and a multiplexer operable by input data, the multiplexer to provide a control signal to the first and second pass-gates or to write drivers according to logic level of the input data. An apparatus comprises circuit for performing read before write operation which avoids unnecessary writes with an initial low power read operation. An apparatus comprises circuit to perform self-controlled write operation which stops the write operation as soon as bit-cell flips. An apparatus comprises circuit for performing self-controlled read operation which stops read operation as soon as data is detected.

Abstract: A method for controlling a semiconductor storage device includes causing a control circuit to supply first write data to a sub cell area which performs a first operation of supplying a first voltage to a selected sub cell area. The semiconductor storage device includes a cell array including a plurality of memory cells, a sense amplifier reading data of the memory cell, a write driver writing data to the memory cell, the sub cell area including the cell array, the sense amplifier, and the write driver, a memory area including a plurality of sub cell areas, and the control circuit controlling the sense amplifier and the write driver.

Abstract: A semiconductor storage device includes a cell array including a plurality of memory cells; a sense amplifier reading data of the memory cell; write drivers writing data to the memory cell; a sub cell area including the cell array, the sense amplifier, and the write driver; a memory area including a plurality of sub cell areas; and a control circuit, when performing a first operation of supplying a first voltage to a selected sub cell area, supplying first write data to the sub cell area which performs the first operation, for selecting the sub cell area as a target of the first operation.

Abstract: Provided is an input buffer circuit comprising a high-voltage protection unit coupled to a pad and comprising a low-voltage pass unit and a high-voltage pass unit that are coupled in common to an output signal node. The low-voltage pass unit may transfer the first voltage to the output signal node, when a first voltage falling within a first voltage range is applied through the pad. The high-voltage pass unit may transfer a third voltage lower than the second voltage to the output signal node, when a second voltage falling within a second voltage range higher than the first voltage range is applied through the pad.

Abstract: A circuit for selecting a row of memory cells of a memory device to be refreshed may include: a cold table suitable for storing as a cold row a row selected as a hammered row when the row selected as the hammered row is neither one of cold rows stored in the cold table nor one of hot rows stored in a hot table; and the hot table suitable for storing, as a hot row, the row selected as the hammered row when the row selected as the hammered row is one of the cold rows stored in the cold table.

Abstract: Apparatuses and methods for detecting refresh starvation at a memory. An example apparatus may include a plurality of memory cells, and a control circuit configured to monitor refresh request commands and to perform an action that prevents unauthorized access to data stored at the plurality of memory cells in response to detection that timing of the refresh request commands has failed to meet a refresh timing limit.

Abstract: A memory device includes a memory cell array, a refresh controller, and control logic. The memory cell array includes a plurality of rows. The refresh controller performs a refresh operation on the plurality of rows. The control logic controls a care operation on a first adjacent region that is most adjacent to a first row based on a number of times the plurality of rows are accessed during a first period. The control logic also controls a care operation on a second adjacent region that is second adjacent to a second row based on a number of times the plurality of rows are accessed during a second period. The first and second periods are different periods.

Abstract: In an embodiment a semiconductor device may include a weakness detector configured to manage error occurrence information by dividing the memory device into a plurality of areas, to control a first refresh period for a first refresh request at each of the plurality of areas based on the error occurrence information and to generate a second refresh request for a second refresh address included in each of the plurality of areas based on the error occurrence information, and a refresh controller configured to generate a first refresh command according to the first refresh period and output the first refresh command to the memory device and to output a second refresh command and the second refresh address to the memory device according to the second refresh request and the second refresh address.

Abstract: A semiconductor device includes a monitoring circuit suitable for generating a monitoring signal indicating whether a speed of a memory clock signal is changed based on a speed information signal representing speed information of the memory clock signal; a cycle control circuit suitable for generating a refresh cycle control signal for controlling a refresh cycle based on a system clock signal, the memory clock signal, the monitoring signal and a refresh flag signal; and a control circuit suitable for generating the memory clock signal and the refresh flag signal based on the speed information signal, the system clock signal and the refresh cycle control signal.

Abstract: Method and Apparatuses for transmitting and receiving commands for a semiconductor device are described. An example apparatus includes: a memory device including a plurality of banks, each bank including a plurality of memory cells; and a memory controller that transmits a first command and a plurality of address signals indicative of a memory cell in a first bank of the plurality of banks at a first time. The first command is indicative of performing a first memory operation, and a second memory operation different from the first memory operation. The memory device receives the first command and the plurality of address signals and further performs the second memory operation to the first bank responsive, at least a part, to the plurality of address signals and the first command.

Abstract: According to one general aspect, an apparatus may include a flip-flop circuit. The flip-flop circuit may include a selection circuit, a memory element circuit, a clock circuit. The selection circuit to select, as the selected input signal, between at least two input signals. The memory element circuit synchronously controlled by a clock signal, and configured to store the selected input signal. The clock circuit configured to output, at least, an earlier version of the clock signal and a later version of the clock signal. The selection circuit is configured to be synchronously controlled, at least in part, by the earlier version of the clock signal such that the selected input signal is held stable when being read by the memory element circuit.

Abstract: Devices and methods are provided for word line pulse width control for a static random access memory (SRAM) devices. An inverter within a pre-decoder circuit receives a first input of a clocked address. The inverter determines an output based on the clocked address. An electrical load of a decoder driver circuit of the SRAM device is modified based on the output. Current to a transistor coupled at a common node is provided. The transistor is configured to electrically couple a plurality of transistors of the decoder driver circuit within the SRAM device.

Abstract: Described is an apparatus which comprises: a memory bit-cell; a local bit-line (LBL) coupled to the memory bit-cell via a read port device; a NAND gate circuitry coupled to the LBL; and a stack of keepers coupled to the LBL, wherein at least one transistor of the stack of keepers is controllable according to an output of the NAND gate circuitry, wherein the stack of keepers includes transistors with variable strength which are to be turned on overtime.

Abstract: Semiconductor memory devices and methods for writing data in memory cells are provided. An exemplary method for writing data in a memory cell includes providing the memory cell with a first pull-up transistor, a first power supply line coupled to the first pull-up transistor, a second pull-up transistor, and a second power supply line coupled to the second pull-up transistor. The method further includes applying a primary voltage from the first power supply line to the first pull-up transistor. The method also includes applying a secondary voltage from the second power supply line to the second pull-up transistor, wherein the secondary voltage is higher than the primary voltage. Further, the method includes performing a write operation to save a selected value in the memory cell.

Abstract: A sense amplify enable (SAE) signal is generated on a SAE line by receiving a trigger signal at a first circuit portion coupled to a first domain power supply and a second circuit portion coupled to a second domain power supply. The second domain power supply is separate and distinct from the first domain power supply. The first circuit portion and the second circuit portion are each further coupled to the SAE line for carrying the SAE signal. For a first period of time, a first portion of the SAE signal is generated based on the first domain power supply using the first circuit portion. And, for second period of time, a second portion of the SAE signal is generated based on the second domain power supply using a second circuit portion.

Abstract: A semiconductor storage device includes an SRAM memory cell composed of a drive transistor, a transfer transistor and a load transistor, an I/O circuit that is connected to bit lines connected to the memory cell, and an operating mode control circuit that switches an operating mode of the I/O circuit between a resume standby mode and a normal operation mode, wherein the I/O circuit includes a write driver that writes data to bit lines, a sense amplifier that reads data from the bit lines, a first switch inserted between the bit lines and the write driver, a second switch inserted between the bit lines and the sense amplifier, a precharge circuit that precharges the bit lines, and a control circuit that controls the first and second switches and the precharge circuit according to a signal from the operating mode control circuit.

Abstract: An example device in accordance with an aspect of the present disclosure includes a first module, a second module, and a third module. The first module is coupled to an element whose status is to be determined, and the first module is to receive an input current that increases over time. The second module is to perform a temporal derivative of a voltage across the element. The third module is to provide an output signal based on a current behavior of the element, according to a change in voltage as a function of a change in current.

Abstract: The present disclosure includes apparatuses and methods for sensing a resistive memory cell. A number of embodiments include performing a sensing operation on a memory cell to determine a current value associated with the memory cell, applying a programming signal to the memory cell, and determining a data state of the memory cell based on the current value associated with the memory cell before applying the programming signal and a current value associated with the memory cell after applying the programming signal.

Abstract: A monitoring circuit for a CES element is provided. The circuit includes a control circuit and an output circuit. The control circuit is configured to vary a control signal provided to the CES element. The control signal may be varied for determining an impedance state of the CES element. The output circuit provided an output signal in dependence on the determined impedance state of the CES element.

Abstract: A phase change memory apparatus comprises at least one heating layer; and at least one phase change layer comprising a vanadium dioxide layer, wherein each of the at least one phase change layer is set corresponding to each of the at least one heating layer, the at least one heating layer is configured to heat the at least one phase change layer.

Abstract: There are provided a variable resistance memory device and an operating method thereof. In a method for operating a variable resistance memory device, the method includes programming multi-bit data in a multi-bit variable resistance memory cell of the variable resistance memory device, wherein the programming includes: generating sequentially increased program voltage pulses, based on the multi-bit data; and applying the program voltage pulses to the multi-bit variable resistance memory cell, wherein a current-voltage curve of the multi-bit variable resistance memory cell exhibits a self-compliance characteristic, wherein the program voltage pulses are included in a voltage section having the self-compliance characteristic.

Abstract: Some embodiments include apparatuses and methods using first and second select gates coupled in series between a conductive line and a first memory cell string of a memory device, and third and fourth select gates coupled in series between the conductive line and a second memory cell string of the memory device. The memory device can include first, second, third, and fourth select lines to provide first, second, third, and fourth voltages, respectively, to the first, second, third, and fourth select gates, respectively, during an operation of the memory device. The first and second voltages can have a same value. The third and fourth voltages can have different values.

Abstract: Semiconductor memory devices and methods include a flash memory cell array fabricated in a well, with memory cells in the same column connected to each other in series and connected to a respective bit line. The memory devices also include a column decoder, a data register buffer unit, a row decoder, an erase control unit, and an input/output buffer unit. In one or more embodiments, the erase control unit applies voltages to the well to erase the memory cells in a manner that avoids breaking down p-n junctions formed by transistors fabricated in the well. In another embodiment, high voltage transistors are used to selectively isolate the bit lines from and couple the bit lines to a peripheral circuit in pairs so that each high voltage transistor is shared by two bit lines.

Abstract: A semiconductor memory device includes a first memory cell, a second memory cell above the first memory cell, a first word line electrically connected to a gate of the first memory cell, a second word line electrically connected to a gate of the second memory cell, and a control unit that performs an erasing operation on the first and second memory cells. During the erasing operation, the control unit applies a first voltage to a first word line and a second voltage higher than the first voltage to a second word line.

Abstract: Embodiments of the present disclosure relate to physical secure erase (PSE) of solid state drives (SSDs). One embodiment of a method of PSE of a SSD includes receiving a PSE command, erasing the memory cells of the blocks, programming the memory cells, and programming the select gates to a portion of the blocks. One embodiment of a SSD includes a controller and a plurality of blocks having a plurality of NAND strings. Each NAND string includes connected in series a select gate drain, memory cells, and a select gate source. The SSD includes a memory erasing instruction that cause the controller to erase the memory cells of the block, program the memory cells, and increase the threshold voltage to the select gate drain and/or the select gate source of some of the NAND strings from the blocks.

Abstract: The embodiment of the present invention discloses a memory device and a method for operating the same. The memory device includes a memory array and a logic circuit. The logic circuit is coupled to the memory array, and is configured to perform a corresponding operation in response to an operation command from a controller. When an interruption event occurs during the corresponding operation, the logic circuit records a memory status, and the logic circuit further is configured to output the memory status to the controller in response to a status read command from the controller.

Abstract: Apparatuses and methods for nonconsecutive sensing of multilevel memory cells include methods of sensing a unit of information from a multilevel memory cell (MLC) using a sensing signal. The unit of information can correspond to a page of information. The MLC can store a plurality of units of information corresponding to a plurality of pages of information. The sensing signal can change from a first sensing magnitude to a second sensing magnitude and from the second sensing magnitude to a third sensing magnitude. The second sensing magnitude can be nonconsecutive from the first sensing magnitude and/or the third sensing magnitude can be nonconsecutive from the second sensing magnitude with respect to a plurality of sensing magnitudes corresponding to a plurality of charge storage states of the MLC.

Abstract: Systems and methods for string-based erase verify to create partial good blocks are disclosed. A block in non-volatile flash memory may include multiple strings. In practice, one string may be slower to erase than other strings. In analyzing the strings, the memory device may iteratively analyze the strings to verify as erased. As one example, the iterations are modified by changing which strings are erased in the subsequent iterations (e.g., only the strings that fail the erase verify). As another example, a predetermined number of iterations are performed after a majority of the strings are verified as erased. In this way, the strings verified as erased need not undergo more deep erasing, which may damage the strings. Further, if fewer than all of the strings are verified as erased, the memory device may designate the block as a partially good block.