Abstract: The present invention relates to a method for manufacturing a high-purity silicon nitride thin film using plasma atomic layer deposition. More specifically, the present invention can realize improved thin film efficiency and a step coverage by performing a two-stage plasma excitation step and can provide a high-purity silicon nitride thin film with an improved deposition rate despite a low film-forming temperature.

Abstract: A semiconductor device includes a substrate, a dielectric layer, a first tungsten layer, an interface layer and a second tungsten layer. The dielectric layer is disposed on the substrate and has a first opening and a second opening larger than the first opening. The first tungsten layer is filled in the first opening and is disposed in the second opening. The second tungsten layer is disposed on the first tungsten layer in the second opening, wherein the second tungsten layer has a grain size gradually increased from a bottom surface to a top surface. The interface layer is disposed between the first tungsten layer and the second tungsten layer, wherein the interface layer comprises a nitrogen containing layer. The present invention further includes a method of forming a semiconductor device.

Abstract: The present invention provides a film forming apparatus capable of enabling source gases to isotropically flow and reducing the size of its chamber. When a susceptor with substrate holders containing substrates moves downward, the substrate holders are combined with a clutch mechanism. When a driving motor runs, a rotating shaft conformably rotates. The rotation is transmitted to a central gear through the clutch mechanism so as to rotate the central gear. Thus, the substrate holder whose peripheral surface is engaged with the center gear accordingly rotates so as to rotate the substrates. When the driving motor runs, a revolving shaft conformably rotates. The rotation is transmitted to the susceptor through a revolving clutch mechanism so as to rotate the susceptor and revolve the substrates. Process gases are fed via an inlet so that expected films are formed on the substrates when the substrates are at rotation and revolution statuses.

Abstract: Disclosed are an apparatus and method of manufacturing an oxide film having a uniform composition and thickness. The apparatus includes a lower chamber including a reaction space, a susceptor to support a substrate, a chamber lid including gas injection ports, a gas distribution module between the chamber lid and the susceptor and connected to the gas injection ports, a first source container module comprising a first source gas having a first vapor pressure, a first carrier gas supply module supplying a first carrier gas to the first source container module, a second source container module comprising a second source gas having a second vapor pressure, a force gas supply module supplying a force gas, and a reactant gas supply module supplying a reactant gas.

Abstract: A method of forming a transition metal containing films on a substrate by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a transition metal halide compound comprising a bidentate nitrogen containing adduct ligand; and contacting the substrate with a second vapor phase reactant. A method for supplying a transition metal halide compound comprising a bidentate nitrogen containing ligand to a reaction chamber is disclosed, along with related vapor deposition apparatus.

Abstract: A method includes: 1) performing an atomic layer deposition cycle including (a) introducing precursors into a deposition chamber housing a substrate to deposit a material on the substrate; and (b) introducing a passivation gas into the deposition chamber to passivate a surface of the material; and 2) repeating 1) a plurality of times to form a film of the material.

Abstract: An atomic layer deposition (ALD) method in an ALD reactor including a reaction chamber housing a substrate vessel, and an isolated vibration source outside of the reaction chamber or isolated within the reaction chamber. Particulate material within the substrate vessel is coated by self-saturating surface reactions using a top-to-bottom precursor flow passing through the substrate vessel, and movements are caused in the particulate material within the substrate vessel by the isolated vibration source while coating the particulate material.

Abstract: A chemical precursor and a method for depositing a silicon oxide film on a surface of a substrate within a reaction space by plasma-enhanced atomic layer deposition are disclosed. The chemical precursors may include a Si—O—Si skeleton or a Si—N—Si skeleton.

Abstract: The resin container coating device includes a chamber which stores a plurality of resin containers and is an external electrode; a plurality of internal electrodes in which gas conductive parts for conducting a source gas are formed and which are respectively inserted inside the plurality of resin containers; and a gas supply unit for supplying the source gas to the chamber, the gas supply unit includes a source gas supply path and a plurality of gas branch paths that branch from the source gas supply path and respectively communicate with the gas conductive parts, and a mass flow controller for controlling the flow rate of the source gas is provide to the source gas supply path and flow rate control valves for controlling the flow rate of the source gas are respectively provided to the plurality of gas branch paths.

Abstract: Group 4 transition metal-containing film forming compositions are disclosed comprising Group 4 transition metal precursors having the formula: wherein M is Ti, Zr, or Hf; each A is independently N, Si, B or P; each E is independently C, Si, B or P; m and n is independently 0, 1 or 2; m+n>1; each R is independently a H or a C1-C4 hydrocarbon group; each L is independently a ?1 anionic ligand selected from the group consisting of NR?2, OR?, Cp, amidinate, ?-diketonate, or keto-iminate, wherein R? is a H or a C1-C4 hydrocarbon group; and L? is NR? or O, wherein R? is a H or a C1-C4 hydrocarbon group. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.

Abstract: Apparatus and methods are provided for reducing cross-contamination between deposition operations during the fabrication of heterojunction cells. An apparatus includes the substrate carrier including a plurality of pockets, and the carrier mask defining the openings that are sized and positioned in correspondence to the pockets of the substrate carrier. The substrate carrier carries a plurality of substrates into an i-layer deposition chamber and a p-layer deposition chamber. The substrate carrier is masked by the carrier mask during deposition of a p-layer. In-situ film mask layer can be used with or without the carrier mask. The in-situ film mask layer is formed of SiN or SiNO and can be deposited over the p-layer. The p-layer is a p-type nanocrystalline SiOx layer formed from a combination of SiH4, B2H6, H2 or CO2. A single substrate carrier can be repeatedly used for sequential deposition of an i-layer and a p-layer without cross contamination.

Abstract: The method for depositing a film of the present invention includes the first film deposition step of depositing a first film 103 having hardness higher than hardness of a substrate 101 on a surface of the substrate 101, the first irradiation step of irradiating particles having energy on the first film 103, and the second film deposition step of depositing an oil-repellent film 105 on a surface of the first film 103 subjected to the first irradiation step. A method for depositing a film enabling production of an oil-repellent substrate includes an oil-repellent film having abrasion resistance of a practically sufficient level can be provided.

Abstract: A coated article comprises a substrate and a self-healing coating disposed on a surface of the substrate, the self-healing coating comprising a metallic matrix; and a plurality of micro- or nano-sized particles dispersed in the metallic matrix; the micro- or nano-sized particles comprising an active agent disposed in a carrier comprising a micro- or nano-sized metallic container, a layered structure, a porous structure, or a combination comprising at least one of the foregoing.

Abstract: A pipe is manufactured through injecting a chloride ion-containing aqueous solution into a copper pipe to fill the copper pipe, thereby forming a copper oxide film on an inner surface of the copper pipe.

Abstract: The present disclosure relates to a coated substrate having a hard material coating, which comprises a hard carbon layer of the hydrogen-free amorphous carbon layer type, wherein the coating comprises a layer consisting of zirconium between the substrate and the hydrogen-free amorphous carbon layer; wherein between the layer consisting of zirconium and the hydrogen-free amorphous carbon layer, a layer consisting of Zr—Cx can be formed in which a zirconium monocarbide is formed; and the layer consisting of Zr—Cx and comprising zirconium monocarbide is applied directly to the adhesive layer consisting of zirconium.

Abstract: A hard film for coating a surface of a base material, the hard film includes a layer A, a layer B, and a nanolayer-alternating layer. The layer A is an AlTiCr nitride of (AlaTibCrc?d)N, where ? is one or more elements selected from C, B, Si, V, Y, Zr, Nb, Mo, Hf, Ta, and W. The layer B is an AlTiCr nitride or AlTiCr carbonitride of (AleTifCrg?h)CxN1-X, where ? is one or more elements selected from B, Si, V, Y, Zr, Nb, Mo, Hf, Ta, and W. The nanolayer-alternating layer is formed by alternately laminating a nanolayer A or a nanolayer B having the same composition as the layer A or B. And, the layer C is an AlCr(SiC) nitride or AlCr(SiC) carbonitride of [AliCrj(SiC)k?1]CYN1-Y, where ? is one or more elements selected from B, Ti, V, Y, Zr, Nb, Mo, Hf, Ta, and W.

Abstract: Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

Abstract: A solar fuel production assembly comprises a separation structure including an ion conducting membrane structurally integrated with one or more solar fuel production units that absorb solar energy to drive one or more redox reactions. A reduction half-reaction occurs on a first side of the separation structure to produce one or more reduction products and an associated oxidation half-reaction occurs on an opposite second side of the separation structure to produce one or more oxidation products. The one or more reduction products are collectable from the first side and the one or more oxidation products are collectable from the second side of the separation structure. The ion conducting membrane provides facile transport of ions to reduce ion transfer ohmic losses associated with the one or more redox reactions, and also provides for separation of the one or more reduction products from the one or more oxidation products.

Abstract: An optical fiber including a light guiding inner core. The light guiding inner core includes a first light guiding segment and a second light guiding segment connected to the first light guiding segment. The first light guiding segment includes, from the inside out, a light absorbing layer, an inner electrode layer, an insulating layer, a void layer, a proton exchange membrane, and an outer electrode layer. The void layer is formed between the insulating layer and the proton exchange membrane. The light absorbing layer is a photovoltaic material layer. The inner electrode layer communicates with the proton exchange membrane via a plurality of microelectrodes across the insulating layer and the void layer. The plurality of microelectrodes is evenly disposed around the inner electrode layer. The outer electrode layer is a porous conductive structure. The second light guiding segment of the light guiding inner core includes a conductive layer.

Abstract: The invention provides for the integration of a CO-consuming process, such as a gas fermentation process, with a CO2 electrolysis process. The invention is capable of utilizing a CO2-comprising gaseous substrate generated by an industrial process and provides for one or more removal modules to remove at least one constituent from a CO2-comprising gaseous substrate prior to passage of the gaseous substrate to a CO2 electrolysis module. The invention may further comprise one or more pressure modules, one or more CO2 concentration modules, one or more O2 separation modules, and/or an H2 electrolysis module. Carbon conversion efficiency is increased by recycling CO2 produced by a CO-consuming process to the CO2 electrolysis process.

Abstract: Provided is an electrolyte in which a total concentration of ions of elements of groups 1 to 8 and ions of elements of groups 13 to 16 in the fifth period of the periodic table, and ions of elements of groups 1, 2, and 4 to 8 and ions of elements of groups 13 to 15 in the sixth period of the periodic table, the ions being additive element ions involved in gas generation, is more than 610 mg/L.

Abstract: Various embodiments include a method for preparing propanol, propionaldehyde, and/or propionic acid comprising: electrolyzing CO2 to give CO and C2H4; and reacting the CO and C2H4 with H2 to produce propanol and/or propionaldehyde, and/or reacting the CO and C2H4 with H2O to produce propionic acid.

Abstract: A reduction electrode of an embodiment includes a metal base material and a plurality of metal nanowires provided on the metal base material. The plurality of metal nanowires include metal nanowires whose average height of contour curve of surface is 20 nm or less for 50% or more in a number ratio. The plurality of metal nanowires are formed by reducing a plurality of metal oxides each having a nanowire shape formed on the metal base material by an electrochemical reduction method. A reduction process of the metal oxides includes a first process of passing a current under a constant current condition where an absolute value is 5 mA/cm2 or more through the plurality of metal oxides, and a second process of passing a current under a constant potential condition through the plurality of metal oxides.

Abstract: An electrolyser operates within an energy system, for example to provide grid services, energy storage or fuel, or to produce hydrogen from electricity produced from renewable resources. The electrolyser may be configured to operate at frequently or quickly varying rates of electricity consumption or to operate at a specified power consumption.

Abstract: Provided are a method of producing a mesh filter, which is capable of forming more minute holes than by punching processing, and which makes it possible, by forming meshes of different openings on the same base material, to appropriately change a flow rate or a light amount with the various opening sizes, and a mesh filter. The method of producing a mesh filter includes a step of producing a mesh filter by continuously plating a platable metal using a roll with a DLC pattern, wherein a mesh filter-shaped resist pattern is obtained by forming multiple mesh filter-shaped resist patterns of different openings on the same cylindrical metal base material.

Abstract: In a film forming method, in a state where a metal solution is sealed in a first accommodation chamber of a housing with a solid electrolyte membrane and a fluid is sealed in a second accommodation chamber of a placing table with a thin film, a substrate is placed on the placing table and the placing table and the housing are moved relative to each other to cause the substrate to be interposed between the solid electrolyte membrane and the thin film, the solid electrolyte membrane and the thin film are pressed against the substrate interposed therebetween to cause the solid electrolyte membrane and the thin film to conform to a surface and a rear surface of the substrate, thereby forming a metal film.

Abstract: The present invention relates to an electrolytic copper foil for a secondary battery and a method of producing the same. The electrolytic copper foil for a secondary battery, in which a burr and curl of a negative electrode plate are inhibited from being formed after an electrolytic copper foil is coated with a negative electrode active material, thereby increasing the loading volume of a negative electrode and increasing a capacity. The electrolytic copper foil for a secondary battery is produced from a plating solution containing Total Organic Carbon (TOC) by using a drum, in which the electrolytic copper foil is formed of one surface that is in direct contact with the drum and the other surface that is an opposite surface of the one surface, and an average cross-sectional grain size of the one surface is 80% or less of an average cross-sectional grain size of the other surface.

Abstract: This zinc-nickel composite plating bath contains a zinc source, a nickel source, silicon dioxide particles and an ammonium-based dispersant in such ranges that enable the achievement of a zinc-nickel composite plating film wherein the codeposition amount of nickel is 10-16 wt % and the codeposition amount of the silicon dioxide particles is 7 vol % or more. Meanwhile, the pH of this zinc-nickel composite plating bath is 5.6 to 6.8.

Abstract: Techniques for mechanically stabilizing metallic nanowire meshes using encapsulation are provided. In one aspect, a method for forming a mechanically-stabilized metallic nanowire mesh is provided which includes the steps of: forming the metallic nanowire mesh on a substrate; and coating the metallic nanowire mesh with a metal oxide that encapsulates the metallic nanowire mesh to mechanically-stabilize the metallic nanowire mesh which permits the metallic nanowire mesh to remain conductive at temperatures greater than or equal to about 600° C. A mechanically-stabilized metallic nanowire mesh is also provided.

Abstract: A plating method includes holding a substrate with a substrate holder while bringing a sealing member into pressure contact with a peripheral portion of the substrate to form an enclosed internal space in the substrate holder; performing a first-stage leakage test of the substrate holder by producing a vacuum in the internal space and checking whether pressure in the internal space reaches a predetermined vacuum pressure within a certain period of time; and if the substrate holder has passed the first-stage leakage test, performing a second-stage leakage test of the substrate holder by closing off the internal space after producing the vacuum therein and checking whether a change in the pressure in the internal space reaches a predetermined value within a certain period of time.

Abstract: In-plane uniformity of a film that is plated on a polygonal substrate is enhanced. An anode holder configured to hold an anode, a substrate holder configured to hold a polygonal substrate, a plating bath for accommodating the anode holder and the substrate holder, and dipping the anode and the substrate in a plating solution, and a control device for controlling a current that flows between the anode and the substrate are included. The substrate holder has a plurality of power feeding members that are disposed along respective sides of the polygonal substrate. The control device is configured to be able to control the current so that currents of at least two different values are simultaneously supplied to the plurality of power feeding members.

Abstract: A method of regenerating a platinum bath by flow reaction, the method comprising the successive steps of: drawing off fluid from the platinum bath by means of a draw-off flow; complexing platinum by mixing together the draw-off flow and a regeneration solution flow containing platinum, mixing taking place in an intensified reactor; and feeding the platinum bath with the mixture resulting from the platinum complexing step, by means of a regenerated bath flow; all of these steps being performed as a continuous flow.

Abstract: A method for growing a crystalline composition, the first crystalline composition may include gallium and nitrogen. The crystalline composition may have an infrared absorption peak at about 3175 cm?1, with an absorbance per unit thickness of greater than about 0.01 cm?1. In one embodiment, the composition ay have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the first crystalline composition.

Abstract: A device for growing a flat single crystal from a seed in a crystallization solution. A support element has a support face; a blocking element comprising a blocking face, positioned at a predefined distance from the support face to block the growth of the single crystal in a direction perpendicular to the support face; a seed protection member, configured to protect the seed during a crystallization solution treatment phase and to free a growth zone positioned between the support face and the blocking face during a rotation of the support element; the blocking element comprises a holding member that cooperates with the protection member, the holding member being movable between a first position where it holds the protection member against the support face during the treatment phase and a second position where the holding member is separated from the protection member and participates in the formation of the blocking face.

Abstract: In accordance with a method of manufacturing CZ silicon wafers, a parameter of at least two of the CZ silicon wafers is measured. A group of the CZ silicon wafers falling within a tolerance of a target specification is determined. The group of the CZ silicon wafers is divided into sub-groups taking into account the measured parameter. An average value of the parameter of the CZ silicon wafers of each sub-group differs among the sub-groups, and a tolerance of the parameter of the CZ silicon wafers of each sub-group is smaller than a tolerance of the parameter of the target specification. A labeling configured to distinguish between the CZ silicon wafers of different sub-groups is prepared. The CZ silicon wafers falling within the tolerance of the target specification are packaged.

Abstract: A production method of a monocrystalline silicon includes: forming a shoulder of the monocrystalline silicon; and forming a straight body of the monocrystalline silicon. To form the shoulder, a crucible is heated such that a heating ratio, which is calculated by dividing a volume of heat from a lower heater by a volume of heat from an upper heater, increases from a predetermined value of 1 or more.

Abstract: A physical vapor transport growth system includes a growth chamber charged with SiC source material and a SiC seed crystal in spaced relation and an envelope that is at least partially gas-permeable disposed in the growth chamber. The envelope separates the growth chamber into a source compartment that includes the SiC source material and a crystallization compartment that includes the SiC seed crystal. The envelope is formed of a material that is reactive to vapor generated during sublimation growth of a SiC single crystal on the SiC seed crystal in the crystallization compartment to produce C-bearing vapor that acts as an additional source of C during the growth of the SiC single crystal on the SiC seed crystal.

Abstract: GaN wafers and bulk crystal have dislocation density approximately 1/10 of dislocation density of seed used to form the bulk crystal and wafers. Masks are formed selectively on GaN seed dislocations, and new GaN grown on the seed has fewer dislocations and often 1/10 or less of dislocations present in seed.

Abstract: The disclosed methods and kits are useful in processing and analyzing a multiplicity of samples in molecular biology workflows where there is an increased chance for sample cross-contamination or misidentification. Some embodiments of the methods and kits utilize at least one spike in control and at least one barcode per sample.

Abstract: A spinneret (1) for producing several filaments, comprising a plurality of perforations (2), each of which ends on the bottom side of the spinneret (1) into a respective outlet opening (3) for pressing a thermoplastic there through for forming the filaments, wherein the outlet openings (3) are arranged in rows (5) which extend along a cooling direction (A), from one side of the spinneret (1) to the opposite side, wherein these rows (5) are arranged increasingly close together, away from a line (C), along this cooling direction (A) and through the centre of the spinneret (1).

Abstract: A roll-to-roll manufacturing machine suitable for processing and producing polymer films that contain nanostructures, including but not limited to multifunctional polymer films. The machine applies a liquid polymer on a substrate to form a liquid polymer film, at least partially embeds nanostructures into the liquid polymer film, melt casts a layer of a molten polymer on the liquid polymer film to produce a thin polymer film, organizes the nanostructures in a thickness direction of the thin polymer film comprising applying an electric field to the thin polymer film, aligns the nanostructures in the thin polymer film by simultaneously subjecting the thin polymer film to heat and a field that aligns the nanostructures, and solidifies the thin polymer film to freeze the nanostructures along nanocolumns in a thickness direction of a solidified polymer film resulting therefrom.

Abstract: Disclosed is a method for preparing a quantum rod/polymer fiber membrane by using electrospinning technique. The method comprises the following steps: (1) preparing a quantum rod solution; (2) preparing a polymer solution, and adding the quantum rod solution obtained in step (1) into the polymer solution so as to form an electrospinning precursor solution with a volume concentration of the quantum rods of 5%-80%; and (3) adding the electrospinning precursor solution into an electrospinning device, regulating the voltage of a generator and the receiving distance, and then performing electrospinning to prepare the quantum rod/polymer fiber membrane. By adjusting the concentration of the quantum rod solution and parameters in the electrospinning process, the method realizes directional arrangements of the quantum rods in the electrospinning process, thereby obtaining the quantum rod/polymer fiber membrane with high degree of polarization performance.

Abstract: Disclosed herein are polyesters and fibers made therefrom. The fiber comprises a polymer, poly(trimethylene furandicarboxylate) (PTF), and PTF based copolymers.

Abstract: A device for contactless measurement of one or more parameters of a linear textile formation (e.g., yarn) includes a yarn sensor with at least two mutually independent detection zones for one or a combination of the parameters of yarn presence, yarn movement, or yarn quality. The individual detections zones are arranged in defined positions relative to at least two different yarn paths of the yarn at a workstation depending on changed states of the yarn at the workstation so that at least one of the parameters is measured in each of the detections zones.

Abstract: Disclosed herein is a knitted multi-layer fabric construction that provides the ability to cool skin to below a current temperature whether wetted or dry. The knit uses four separate yarns which collectively work together to produce enhanced cooling. Knits can include warp knit, seamless, hosiery, flat bed, spacer, and double knits. Various finishing methods may also be employed to enhance the cooling power of the fabric.

Abstract: A fabric includes base yarns and antistatic spun yarns located in discrete portions of the fabric such that the fabric dissipates static electricity by way of an inductive field and complies with one or more standards for static dissipation in fabric. The antistatic spun yarns may include inductive antistatic staple fibers, and may include less than 20% antistatic fiber. The fabric may be a woven fabric with the antistatic spun yarns inserted into the fabric in both the warp and filling directions in a ratio of antistatic spun yarns to base yarns of from 1:1 to 1:40. The fabrics may be flame resistant and comply with one or more standards for flame resistant fabrics and/or may comply with one or more standards for high visibility apparel. The fabric may have a total antistatic fiber content of less than about 1%.

Abstract: The present invention relates to fabrics and/or garments/apparel that confer protection to a wearer by resisting break open, and/or by absorbing at least a portion of any incident energy. The fabrics/garments/apparel described herein comprise yarns prepared from blends of polymers and woven in stellar weave. The blend of fibers comprises flame retardant viscose fibers, meta aramid fibers, para aramid fibers, Nylon 66 fibers, and antistatic fibers in a predefined proportion. A process of manufacturing the fabric for wearable light weight protective apparel comprises processes of spinning, weaving, wet processing and garmenting carried out in a predefined manner.

Abstract: A cooling material includes opposite top and bottom surfaces and a central portion positioned between the top and bottom surfaces. The top surface includes a first fiber. The bottom surface includes a second fiber. The middle portion includes the first and second fibers and a third fiber. Methods of manufacture are included.

Abstract: The woven textile includes an upper layer, a lower layer, a binding thread, and a third braid. The upper layer and the lower layer include at least one first braid and at least one second braid respectively. The first and the second braids extend in a meandering way to form a plurality of hollow portions. The upper layer and the lower layer overlap to have plural overlapping portions aligned along the horizontal direction. Plural rows of said overlapping portions are arranged along the longitudinal direction. The binding thread fixes the overlapping portions in a same row together by weaving so that the upper layer and the lower layer are positioned. The third braid fixes the overlapping portions of a same row with the overlapping portions of an other same row by weaving so that a distance between said two rows of overlapping portions is restricted.

Abstract: Air-cured batting includes a nonwoven web. The batting contains 75 to 97.5 wt % of fiber mixture, and 2.5 to 25 wt % of resin comprising a cross-linked copolymer of butyl acrylate and methyl methacrylate, wherein the resin is present on a first surface of the batting, and on a second surface of the batting, the second surface being parallel to the first surface, and wherein the resin is adhered to fibers of the fiber mixture, thereby forming a bonded structure, such that, by virtue of the resin, the air-cured batting has structural integrity that imparts handleability of the batting in sheet form. Articles comprising the air-cured batting and methods of making the air-cured batting are also provided.