Patents Issued in December 17, 2019
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Patent number: 10510488Abstract: A multilayer ceramic capacitor includes a laminated body including ceramic layers, first internal electrode layers, and second internal electrode layers alternately laminated. First and second external electrodes provided on the laminated body include first diffusion portions defined by interdiffusion of the first internal electrode layers and the first external electrode at interfaces between the first internal electrode layers and the ceramic layers, and second diffusion portions defined by interdiffusion of the second internal electrode layers and the second external electrode at interfaces between the second internal electrode layers and the ceramic layers.Type: GrantFiled: August 29, 2017Date of Patent: December 17, 2019Assignee: MURATA MANUFACTURING CO., LTD.Inventor: Atsushi Yasuda
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Patent number: 10510489Abstract: A mounting structure includes a circuit board including one principal surface on which a multilayer capacitor is mounted. The circuit board includes a first insulating layer, and a second insulating layer having a Young's modulus smaller than that of the first insulating layer. The second insulating layer is closer to the one principal surface than the first insulating layer. A multilayer capacitor built-in substrate includes a circuit board, a multilayer capacitor on one principal surface of the circuit board, and a resin layer on the one principal surface of the circuit board and embedding the multilayer capacitor. The circuit board includes a first insulating layer, and a second insulating layer having a Young's modulus smaller than that of the first insulating layer. The second insulating layer is closer to the one principal surface than the first insulating layer.Type: GrantFiled: September 18, 2018Date of Patent: December 17, 2019Assignee: MURATA MANUFACTURING CO., LTD.Inventors: Tadateru Yamada, Isamu Fujimoto, Kazuo Hattori, Masaru Takahashi
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Patent number: 10510490Abstract: A multilayer ceramic electronic component includes: a ceramic body including a dielectric layer and first and second internal electrodes stacked to be alternately exposed to one side surface and the other side surface with the dielectric layer disposed therebetween; and first and second external electrodes disposed on an external surface of the ceramic body to be connected to the first and second internal electrodes, respectively, in which the ceramic body includes an area of overlap in a thickness direction of the first and second internal electrodes, margin region, and/or cover region, and the margin region in the width direction and/or the cover region includes a phosphoric acid-based second phase.Type: GrantFiled: February 13, 2019Date of Patent: December 17, 2019Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Sim Chung Kang, Eun Jung Lee, Ki Pyo Hong, Yong Park
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Patent number: 10510491Abstract: A capacitor component includes a body including a dielectric layer and first and second internal electrodes, alternately disposed in a first direction, and first and second external electrodes, respectively disposed on opposite end surfaces of the body in a second direction, perpendicular to the first direction in the body. An amorphous second phase is disposed at an interface between the first and second internal electrodes and the dielectric layer, and s/e is between 0.02 and 0.07, where s is a total length of the amorphous second phase disposed in a boundary line between the first or second internal electrode and the dielectric layer in the second direction and e is a length of the first or second internal electrode in the second direction.Type: GrantFiled: February 19, 2019Date of Patent: December 17, 2019Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Hyung Soon Kwon, Kyoung Jin Cha, Ji Hong Jo
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Patent number: 10510492Abstract: Monolithic capacitor structures having a main capacitor and a vise capacitor are discussed. The vise capacitor provides to the monolithic capacitor structure reduced vibrations and/or acoustic noise due to piezoelectric effects. To that end, vise capacitor may cause piezoelectric deformations that compensate the deformations that are caused by the electrical signals in the main capacitor. Embodiments of these capacitor structures may have the main capacitor and the vise capacitor sharing portions of a rigid dielectric. Electrical circuitry that employs the vise capacitor to reduce noise and/or vibration in the monolithic capacitor structures is also described. Methods for fabrication of these capacitors are discussed as well.Type: GrantFiled: May 19, 2017Date of Patent: December 17, 2019Assignee: APPLE INC.Inventors: Ming Y. Tsai, Albert Wang, Curtis C. Mead, Tyler S. Bushnell, Paul A. Martinez
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Patent number: 10510493Abstract: This core-shell composite (10) is provided with a core (11) formed from a porous carbon body having a large number of pores from the interior through to the surface, and a shell layer (12) formed from conductive polymer nanorods (12a) that extend outward from the cavities of the pores (11a) on the surface of the core. The present invention provides the core-shell composite (10), to which electrolyte ions can be efficiently adsorbed or doped, a method for producing the core-shell composite, as well as an electrode material, a catalyst, an electrode, a secondary battery and an electric double-layer capacitor that use the core-shell composite.Type: GrantFiled: February 3, 2017Date of Patent: December 17, 2019Assignees: TPR CO., LTD., NATIONAL INSTITUTE FOR MATERIALS SCIENCEInventors: Naoya Kobayashi, Yusuke Yamauchi, Rahul Salunkhe, Jing Tang
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Patent number: 10510494Abstract: An electrochemical storage device for storing and providing electrical energy by means of its electrical capacitance comprises an electrode comprising an electrode basis, a counter electrode arranged with a distance to the electrode and comprising a counter electrode basis, and an electrolyte arranged between the electrode and the counter electrode and separating the electrode from the counter electrode. The electrode on the electrode basis and the counter electrode on the counter electrode basis each comprise a surface-enlarging structure. The electrode basis and the counter electrode basis extend in a common contact plane of the electrode and the counter electrode, where they each comprise parts of a conductive contact layer arranged on a non-conductive substrate. Furthermore, a method of manufacturing such a storage device is described.Type: GrantFiled: November 13, 2017Date of Patent: December 17, 2019Assignee: DEUTSCHES ZENTRUM FUR LUFT-UND RAUMFAHRT E.V.Inventors: Thorsten Mahrholz, Sebastian Geier
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Patent number: 10510495Abstract: A low-cost electrochemical capacitor is provided which has high capacity and excellent charging and discharging characteristics, simultaneously has excellent safety and reliability, and has the basic performance as a capacitor, achieved in that, as the electrolyte between a negative electrode and a positive electrode, a solution of an ambient temperature molten salt and a specific polyether copolymer is allowed to gel using a specific photoreaction initiator and is held between the two electrodes. This low-cost electrochemical capacitor has the basic performance of a capacitor, has high capacity and excellent charging and discharging characteristics without use of a separator, and simultaneously has excellent safety and reliability.Type: GrantFiled: March 30, 2016Date of Patent: December 17, 2019Assignee: OSAKA SODA CO., LTD.Inventors: Takashi Matsuo, Masato Tabuchi, Hideaki Ueda, Katsuhito Miura
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Patent number: 10510496Abstract: A multilayer ceramic capacitor includes a multilayer body that includes ceramic layers and inner conductor layers arranged in a stacking direction and that includes a first surface in which the inner conductor layers are exposed, and an outer electrode on the first surface of the multilayer body. The inner conductor layers contain Ni. The outer electrode includes a base layer that directly covers at least a portion of the first surface and is connected to the inner conductor layers. The base layer contains a metal and glass and includes a Ni diffusion portion connected to the inner conductor layers, the Ni diffusion portion containing Ni. A ratio of a diffusion depth of the Ni diffusion portion to a thickness of the base layer is smaller on two of the inner conductor layers that are located outermost than on other inner conductor layers.Type: GrantFiled: October 12, 2018Date of Patent: December 17, 2019Assignee: MURATA MANUFACTURING CO., LTD.Inventors: Masato Kimura, Yasuhiro Nishisaka
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Patent number: 10510497Abstract: A removable electric current switching element includes a housing including a first bottom plate and a second bottom plate opposite to one another. The housing includes insulating walls which extend around electrically mobile contacts from the second bottom plate and in a direction perpendicular to the second bottom plate. The housing also includes protection walls which at least partially cover internal faces of the insulating walls, these protection walls being formed of a single piece with the second bottom plate.Type: GrantFiled: April 3, 2018Date of Patent: December 17, 2019Assignee: Schneider Electric Industries SASInventors: Patrick Larcher, Patrick Comtois
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Patent number: 10510498Abstract: A travel switch with a high-safety lever structure comprises a travel adjustment device, a transmission device, a lever-structure electric-connection switch assembly, an insulation assembly and a rivet fixing assembly; the switch assembly comprises a dual-energy-storage-reed structure and a stationary contact piece; the dual-energy-storage-reed structure comprises a stationary reed and a moving reed; the moving reed and the stationary reed are spaced apart at one end, and the moving reed is connected to the stationary reed at another end; the moving reed has energy storage reeds and a moving contact; the stationary reed has energy storage reed positioning hooks; the energy storage reed hooks the energy storage reed positioning hook in a matched mode; the stationary contact piece has a stationary contact; a moving contact limiting block is on the stationary reed; the moving contact connects the stationary contact, and the moving contact corresponds to the moving contact limiting block.Type: GrantFiled: October 1, 2018Date of Patent: December 17, 2019Assignee: Albert Chi Man AoInventor: Albert Chi Man Ao
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Patent number: 10510499Abstract: A surface mount device switch includes a pedestal, a metal dome and a conductive buffering sheet. A pedestal contact part of the pedestal is electrically connected with a circuit board. The conductive buffering sheet is arranged between the pedestal and the metal dome. Due to the conductive buffering sheet, the metal dome does not collide with the conducting part of the pedestal to generate the click sound. Consequently, the comfort of operating the touchpad module is enhanced. The present invention further provides a touchpad module and a computing device with the surface mount device switch.Type: GrantFiled: October 23, 2018Date of Patent: December 17, 2019Assignee: PRIMAX ELECTRONICS LTD.Inventor: Tai-Sou Huang
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Patent number: 10510500Abstract: In some examples, a computing device may include a first housing coupled to a second housing. The first housing may include a first set of components including a display device. The second housing may include a second set of components including a keyboard and a light source that emits light. An individual key of the keyboard may include one or more lenses. The one or more lenses may focus the light towards an area below an individual keycap of the individual key. For example, the one or more lenses may be integrated into a scissor mechanism of the individual key. The keycap may include an opaque material into which is embedded a character or a symbol made of a transparent or translucent material through which the light is visible.Type: GrantFiled: April 27, 2017Date of Patent: December 17, 2019Assignee: Dell Products L.P.Inventors: John Trevor Morrison, Kevin M. Turchin
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Patent number: 10510501Abstract: According to the present disclosure, a controller includes a base and a continuous sealing layer connected to the base forming an environmentally sealed compartment between the base and a lower surface of the continuous sealing layer. A circuit board is positioned within the compartment, and a rotary knob encoder is positioned on an upper surface of the continuous sealing layer. Movement of the rotary knob encoder is detectable by the circuit board through the continuous sealing layer.Type: GrantFiled: April 19, 2017Date of Patent: December 17, 2019Assignee: DANFOSS POWER SOLUTIONS INC.Inventor: Joseph John Kubes
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Patent number: 10510502Abstract: A thermal protector includes, in a fixed manner, a first terminal and a second terminal that are respectively connected to external circuits, at lower left/right ends of the longitudinal directions of a base, and a right end at which a movable plate and a bimetal are superimposed is fixed to the right end of the upper surface of the base and is connected to the second terminal. A fixed contact is fixed to an internal end of the first terminal that is exposed in the left end of the base. A movable contact is fixed at a position facing the fixed contact on the lower surface of the left end of the movable plate. A partition wall that encloses the movable contact and the fixed contact from three directions is provided and bent plate planes are formed on both sides of the movable plate in the vicinity of the movable contact. The bent plate planes adjust the flow direction of hot air in cooperation with the partition wall so as to prevent a malfunction of a breaking arc flying to surrounding conductive members.Type: GrantFiled: October 19, 2015Date of Patent: December 17, 2019Assignee: Uchiya Thermostat Co., Ltd.Inventor: Hideaki Takeda
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Patent number: 10510503Abstract: Methods of forming and operating a switching device are provided. The switching device is formed in an interconnect, the interconnect including a plurality of metallization levels, and has an assembly that includes a beam held by a structure. The beam and structure are located within the same metallization level. Locations of fixing of the structure on the beam are arranged so as to define for the beam a pivot point situated between these fixing locations. The structure is substantially symmetric with respect to the beam and to a plane perpendicular to the beam in the absence of a potential difference. The beam is able to pivot in a first direction in the presence of a first potential difference applied between a first part of the structure and to pivot in a second direction in the presence of a second potential difference applied between a second part of the structure.Type: GrantFiled: December 30, 2015Date of Patent: December 17, 2019Assignee: STMICROELECTRONICS (ROUSSET) SASInventors: Christian Rivero, Pascal Fornara, Antonio di-Giacomo, Brice Arrazat
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Patent number: 10510504Abstract: Systems (100) and methods (2400) for operating a submersible switch positioned below a body of water's surface. The methods comprise: deflecting a semi-rigid top wall of the submersible switch's cap towards a center of the switch when hydrostatic pressure is applied thereto; directly applying a pushing force by the submersible switch's cap onto an actuator of an internal switch disposed in a body of the submersible switch; and causing an operational state change of the submersible switch in response to the pushing force being applied directly to the actuator of the internal switch.Type: GrantFiled: December 8, 2017Date of Patent: December 17, 2019Assignee: Eagle Technology, LLCInventors: Brannen L. Johnson, G. Randell Straley, Jeffrey M. Rhein, Sean P. Marikle
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Patent number: 10510505Abstract: The present invention provides a fuse unit, which reduces the number of components of a bus bar and eliminates alignment of tuning fork terminals, and a method of manufacturing the fuse unit. Disclosed is a method of manufacturing a fuse unit, which includes a bus bar including a battery terminal, a fuse connection terminal, and an external connection terminal and is manufactured by integrating the bus bar and a resin covering body by insert molding. In this manufacturing method, the fuse connection terminal is constituted of an input side tuning fork terminal connected to the battery terminal and an output side tuning fork terminal connected to the external connection terminal, the input side tuning fork terminal and the output side tuning fork terminal are connected by a joining portion so as to face each other, the bus bar including the fuse connection terminal is integrated with the resin covering body by insert molding.Type: GrantFiled: September 9, 2016Date of Patent: December 17, 2019Assignee: PACIFIC ENGINEERING CORPORATIONInventors: Masahiro Kimura, Toshihisa Iwakura
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Patent number: 10510506Abstract: A circuit breaker design allows for the circuit breaker to have an overall width (i.e., measured along the circuit breaker's exposed outwardly-facing surface of its housing) that is narrower than achievable with known typical configurations, while at the same time still providing robust arc interruption capabilities. This is achieved in large part by providing a specific orientation of a moveable contact arm assembly and/or by providing a specific configuration of a current path within the housing.Type: GrantFiled: January 31, 2019Date of Patent: December 17, 2019Assignee: Carling Technologies, Inc.Inventor: Michael Fasano
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Patent number: 10510507Abstract: A fuse unit includes a fusible link, a holding mechanism, and a locking mechanism. The fusible link is connected to a battery terminal and includes a fusible element that melts when an overcurrent flows through the fusible link. The holding mechanism includes a base portion disposed between a post standing surface of a battery housing and the battery terminal in a state where the battery terminal is fastened to a battery post provided on the post standing surface, and a holding portion that is formed next to the base portion and that holds the fusible link above the post standing surface. The locking mechanism locks the holding mechanism onto the post standing surface. With this configuration, the fuse unit can suppress a load acting on the battery post.Type: GrantFiled: June 14, 2017Date of Patent: December 17, 2019Assignee: YAZAKI CORPORATIONInventors: Yoshinori Kitano, Takahiro Shiohama, Shinya Onoda, Tatsuya Aoki
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Patent number: 10510508Abstract: A charged particle beam apparatus includes a sample chamber; a sample stage; an electron beam column for irradiating a sample with an electron beam; and a focused ion beam column for irradiating the sample with a focused ion beam. The apparatus includes a displacement member having an open/close portion displaceable between an insertion position between a beam emitting end portion of the electron beam column and the sample stage, and a withdrawal position away from the insertion position, and a contact portion provided at a contact position capable of contacting the sample before the beam emitting end portion during operation of the sample stage. A driving unit displaces the displacement member, and a conduction sensor detects whether the sample is in contact with the contact portion.Type: GrantFiled: March 26, 2018Date of Patent: December 17, 2019Assignee: HITACHI HIGH-TECH SCIENCE CORPORATIONInventor: Toshiyuki Iwahori
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Patent number: 10510509Abstract: An edge detection system is provided that generates a scanning electron microscope (SEM) linescan image of a pattern structure including a feature with edges that require detection. The edge detection system includes an inverse linescan model tool that receives measured linescan information for the feature from the SEM. In response, the inverse linescan model tool provides feature geometry information that includes the position of the detected edges of the feature.Type: GrantFiled: December 17, 2018Date of Patent: December 17, 2019Assignee: Fractilia, LLCInventor: Chris Mack
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Patent number: 10510510Abstract: Methods and systems are described for processing cellulosic and lignocellulosic materials and useful intermediates and products, such as energy and fuels. For example, irradiating methods and systems are described to aid in the processing of the cellulosic and lignocellulosic materials. The electron beam accelerator has multiple windows foils and these foils are cooled with cooling gas. In one configuration a secondary foil is integral to the electron beam accelerator and in another configuration the secondary foil is part of the enclosure for the biomass conveying system.Type: GrantFiled: April 13, 2017Date of Patent: December 17, 2019Assignee: Xyleco, Inc.Inventors: Marshall Medoff, Anthony Peters, Thomas Craig Masterman, Robert Paradis, Kenny Kin-Chui Ip
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Patent number: 10510511Abstract: Provided is an apparatus for treating a substrate which is capable of uniformly controlling a temperature of a support plate. The apparatus for treating the substrate includes a chamber having a treating space with an opened top surface, a support unit disposed within the chamber to support the substrate, a dielectric assembly disposed on the opened top surface of the chamber to cover the opened top surface, and a plasma source disposed above the dielectric assembly, the plasma source including an antenna generating plasma from a gas supplied into the chamber. The dielectric assembly includes a dielectric window, and heating units each of which is formed of a non-metallic material, the heating units being disposed on a top surface of the dielectric window to heat the dielectric window.Type: GrantFiled: October 30, 2014Date of Patent: December 17, 2019Assignee: SEMES CO., LTD.Inventors: Hyung Joon Kim, Seung Kue Kim
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Patent number: 10510512Abstract: Embodiments of method and system for controlling plasma performance are described. In an embodiment a method may include supplying power at a first set of power parameters to a plasma chamber. Additionally, the method may include forming plasma within the plasma chamber using the first set of power parameters. The method may also include measuring power coupling to the plasma at the first set of power parameters. Also, the method may include supplying power at a second set of power parameters to the plasma chamber. The method may additionally include measuring power coupling to the plasma at the second set of power parameters to the plasma. The method may also include adjusting the first set of power parameters based, at least in part, on the measuring of the power coupling at the second set of power parameters.Type: GrantFiled: January 25, 2018Date of Patent: December 17, 2019Assignee: Tokyo Electron LimitedInventors: Merritt Funk, Megan Doppel, Kazuki Moyama, Chelsea DuBose, Justin Moses
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Patent number: 10510513Abstract: Provided is a plasma processing device which processes an object to be processed using plasma. The plasma processing device includes: a processing container configured to perform a processing by the plasma therein; and a plasma generation mechanism including a high-frequency generator disposed outside the processing container to generate high-frequency waves. The plasma generation mechanism is configured to generate the plasma in the processing container using the high-frequency waves generated by the high-frequency generator. The high-frequency generator includes a high-frequency oscillator configured to oscillate the high-frequency waves and an injection unit configured to inject a signal into the high-frequency oscillator. The signal has a frequency which is the same as a fundamental frequency oscillated by the high-frequency oscillator and has reduced different frequency components.Type: GrantFiled: January 15, 2013Date of Patent: December 17, 2019Assignee: TOKYO ELECTRON LIMITEDInventors: Kazushi Kaneko, Kazunori Funazaki, Hideo Kato
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Patent number: 10510514Abstract: According to an aspect, a gas supply mechanism for supplying a gas to a semiconductor manufacturing apparatus is provided. The gas supply mechanism includes a pipe connecting a gas source and the semiconductor manufacturing apparatus to each other, and a valve which is provided on the pipe. The valve includes a plate rotatable about an axis, the axis extending in a plate thickness direction, and a housing provided along the plate without contacting the plate to accommodate the plate, the housing providing a gas supply path along with the pipe. A through hole is formed in the plate, the through hole penetrating the plate at a position on a circle which extends around the axis and intersects the gas supply path.Type: GrantFiled: September 24, 2015Date of Patent: December 17, 2019Assignee: TOKYO ELECTRON LIMITEDInventors: Yuki Hosaka, Yoshihiro Umezawa, Mayo Uda, Takashi Kubo
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Patent number: 10510515Abstract: A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distributor, a pump coupled to the plasma chamber, a workpiece support to hold a workpiece, an intra-chamber electrode assembly comprising a plurality of filaments extending laterally through the plasma chamber, each filament including a conductor surrounded by a cylindrical insulating shell, the plurality of filaments including a first multiplicity of filaments and a second multiplicity of filaments arranged in an alternating pattern with the first multiplicity of filaments, a first bus coupled to the first multiplicity of filaments and a second bus coupled to the second multiplicity of filaments, an RF power source to apply RF signal the intra-chamber electrode assembly, and at least one RF switch configured to controllably electrically couple and decouple the first bus from one of i) ground, ii) the RF power source, or iii) the second bus.Type: GrantFiled: June 21, 2018Date of Patent: December 17, 2019Assignee: Applied Materials, Inc.Inventors: Kenneth S. Collins, Kartik Ramaswamy, Shahid Rauf, Kallol Bera, James D. Carducci, Michael R. Rice, Yue Guo
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Patent number: 10510516Abstract: A semiconductor manufacturing method and semiconductor manufacturing tool for performing the same are disclosed. The semiconductor manufacturing tool includes a plasma chamber, a mounting platform disposed within the plasma chamber, a focus ring disposed within the plasma chamber, and at least one actuator mechanically coupled to the focus ring and configured to move the focus ring vertically. The actuator is configured to move the focus ring vertically when a plasma is present in the plasma chamber.Type: GrantFiled: November 29, 2016Date of Patent: December 17, 2019Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Chi Lin, Yi-Wei Chiu, Hung Jui Chang, Chin-Hsing Lin
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Patent number: 10510517Abstract: A cleaning apparatus of an exhaust path of a process reaction chamber used in a manufacturing of articles including a semiconductor or an LCD. The cleaning apparatus of the exhaust path includes a housing having an inflow pipe, connected to an upstream end of the exhaust path, an outflow pipe, connected to a downstream end of the exhaust path, and a connecting pipe disposed between the inflow pipe and the outflow pipe. A radio frequency generator in the housing applies radio frequency power to the inflow pipe and to the outflow pipe via respective coils. Plasma induced within the inflow and outflow pipes from RF power applied via the respective coils causes the generation of radicals from the exhaust gas flowing within. The radicals act to dislodge accumulated particulates within the exhaust path downstream of the cleaning apparatus.Type: GrantFiled: January 26, 2017Date of Patent: December 17, 2019Assignee: RETRO-SEMI TECHNOLOGIES, LLCInventors: Dong-Soo Kim, Min-Su Joo, Min Kyu Chu
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Patent number: 10510518Abstract: Embodiments of the invention generally relate to methods of dry stripping boron-carbon films. In one embodiment, alternating plasmas of hydrogen and oxygen are used to remove a boron-carbon film. In another embodiment, co-flowed oxygen and hydrogen plasma is used to remove a boron-carbon containing film. A nitrous oxide plasma may be used in addition to or as an alternative to either of the above oxygen plasmas. In another embodiment, a plasma generated from water vapor is used to remove a boron-carbon film. The boron-carbon removal processes may also include an optional polymer removal process prior to removal of the boron-carbon films. The polymer removal process includes exposing the boron-carbon film to NF3 to remove from the surface of the boron-carbon film any carbon-based polymers generated during a substrate etching process.Type: GrantFiled: November 6, 2015Date of Patent: December 17, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Kwangduk Douglas Lee, Sudha Rathi, Ramprakash Sankarakrishnan, Martin Jay Seamons, Irfan Jamil, Bok Hoen Kim
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Patent number: 10510519Abstract: In time-series data indicating light emission of plasma when plasma processing is carried out on a sample by generating the plasma, an analysis apparatus creates combinations of a plurality of light emission wavelengths of elements and a plurality of time intervals within a plasma processing interval and calculates, for each of the combinations of the wavelengths and the time intervals, a correlation between an average value of light emission intensity and the number of times the plasma processing is carried out on the samples for each of the combinations of the wavelengths and the time intervals that have been created. Thereafter, the data analysis apparatus selects, as a combination of the wavelength and the time interval used to observe or control the plasma processing, a combination of a wavelength of light emitting from a specific element and a specific time interval having a maximum correlation.Type: GrantFiled: February 23, 2016Date of Patent: December 17, 2019Assignee: Hitachi High-Technologies CorporationInventors: Ryoji Asakura, Kenji Tamaki, Akira Kagoshima, Daisuke Shiraishi, Masahiro Sumiya
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Patent number: 10510520Abstract: Various configurations of electrically conductive, gas-sealed connections between two pieces of aluminum are described along with methods of making an electrically conductive, gas-sealed connection between two pieces of aluminum.Type: GrantFiled: April 25, 2019Date of Patent: December 17, 2019Assignee: DOUGLAS ELECTRICAL COMPONENTS, INC.Inventors: Stephen Schwed, Edward William Douglas, Stephen Diego Pellegrino, Christopher Rempel
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Patent number: 10510521Abstract: This invention relates to graphical user-interactive analysis of data, including in particular, mass spectrographic data analysis, as well as methods and software for generating and using such. One aspect provides user-customizable reports, including methods and apparatuses for generating customizable pivot tables and graphs specific to mass spectrographic data.Type: GrantFiled: October 1, 2018Date of Patent: December 17, 2019Assignee: Protein Metrics Inc.Inventors: Yong Joo Kil, Eric Carlson
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Patent number: 10510522Abstract: To correct spectral interference due to a divalent ion of an interfering element on a measurement ion of an analysis element measured by a mass spectrometer using a plasma ion source by accounting for a mass-bias effect of the mass spectrometer, measurement values of ionic strength of divalent ions of two isotopes having different, odd mass numbers among isotopes of the interfering element are used. In measuring to obtain a measurement value where a correction method of the present invention is applied, it is suitable to set a mass resolution of the mass spectrometer to be higher than a time of normal analysis.Type: GrantFiled: December 13, 2018Date of Patent: December 17, 2019Assignee: Agilent Technologies, Inc.Inventors: Naoki Sugiyama, Mineko Omori, Kazumi Nakano
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Patent number: 10510523Abstract: An ion-trap system having a trapping location that is controllable with nanometer-scale precision in three dimensions is disclosed. The ion-trap system includes an ion trap that includes a pair of RF driver electrodes, a pair of tuning electrodes operably coupled with the RF driver electrodes to collectively generate an RF field having an RF null that defines the trapping location, as well as a plurality of DC electrodes that are operably coupled with the RF driver electrodes and the tuning electrodes. Each tuning electrode is driven with an RF signal whose amplitude and phase is independently controllable. By controlling the amplitudes of the RF signals applied to the tuning electrodes, the height of the trapping location above the mirror is controlled. The position of the tuning location along two orthogonal lateral directions is controlled by controlling a plurality of DC voltages applied to the plurality of DC electrode pads.Type: GrantFiled: July 17, 2018Date of Patent: December 17, 2019Assignee: Duke UniversityInventors: Jungsang Kim, Andre Van Rynbach, Peter Maunz
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Patent number: 10510524Abstract: After various ions of sample origin have been captured within an ion trap, unnecessary ions other than a target ion having a specific m/z are ejected from the ion trap (S1, S2). Subsequently, an operation for dissociating the target ion within the ion trap by hydrogen radical dissociation (HAD), and an operation for sequentially ejecting the thereby generated product ions by resonance excitation from the low m/z side to a point located immediately before the m/z of the target ion, are repeated multiple times (S3-S7). The ions ejected by resonance excitation are detected with a detector to acquire MS/MS spectrum data, and the data obtained by performing the ejection by resonance excitation multiple times are accumulated to create the final MS/MS spectrum (S5, S8).Type: GrantFiled: January 18, 2016Date of Patent: December 17, 2019Assignee: SHIMADZU CORPORATIONInventors: Sadanori Sekiya, Hidenori Takahashi
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Patent number: 10510525Abstract: An apparatus for separating ions includes an electrode arrangement having a length extending between first and second ends. The first end is configured to introduce a beam of ions into an ion transmission space of the arrangement. An electronic controller applies an RF potential and a DC potential to an electrode of the electrode arrangement, for generating a ponderomotive RF electric field and a mass-independent DC electric field. The application of the potentials is controlled such that a ratio of the strength of the ponderomotive RF electric field to the strength of the mass-independent DC electric field varies along the length of the electrode arrangement. The generated electric field supports extraction of ions having different m/z values at respective different positions along the length of the electrode arrangement. Ions are extracted in one of increasing and decreasing sequential order of m/z ratio with increasing distance from the first end.Type: GrantFiled: January 10, 2019Date of Patent: December 17, 2019Assignees: Thermo Fisher Scientific (Bremen) GmbH, Thermo Finnigan LLCInventors: Dmitry E. Grinfeld, Mikhail V. Ugarov, Viatcheslav V. Kovtoun, Alexander A. Makarov
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Patent number: 10510526Abstract: A gas light source is disclosed where gas is contained within a graphene cylinder or graphene capsule. Electrodes extending into the graphene cylinder or capsule are stimulated by an electric voltage to emit light. Eight graphene cylinder light sources can be arranged into a seven-segment alpha-numeric display having a decimal point. Different gases produce different colors of light. Three gas light sources having different gases can be arranged into an RGB pixel. An array of RGB pixels can be formed into a display.Type: GrantFiled: March 27, 2019Date of Patent: December 17, 2019Inventor: Tyson York Winarski
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Patent number: 10510527Abstract: Some embodiments relate to methods and apparatus for mitigating high metal concentrations in photoresist residue and recycling sulfuric acid (H2SO4) in single wafer cleaning tools. In some embodiments, a disclosed single wafer cleaning tool has a processing chamber that houses a semiconductor substrate. A high oxidative treatment unit may apply a high oxidative chemical pre-treatment to the semiconductor substrate to remove a photoresist residue having metal impurities from the semiconductor substrate in a manner that results in a contaminant remainder. A SPM cleaning unit apply a sulfuric-peroxide mixture (SPM) cleaning solution to the semiconductor substrate to remove the contaminant remainder from the semiconductor substrate as an SPM effluent. The SPM effluent is provided to a recycling unit configured to recover sulfuric acid (H2SO4) from the SPM effluent and to provide the recovered H2SO4 to the SPM cleaning unit via a feedback conduit.Type: GrantFiled: February 1, 2013Date of Patent: December 17, 2019Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chien-Wen Hsiao, Shao-Yen Ku, Tzu-Yang Chung, Shang-Yuan Yu, Wagner Chang
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Patent number: 10510528Abstract: A substrate processing method includes a replacement step of replacing a rinse liquid adhered to the front surface of a substrate with a low surface tension liquid whose surface tension is lower than that of the rinse liquid, where the replacement step includes a low surface tension liquid supply step of supplying the low surface tension liquid to the front surface while supplying a heating fluid to the rear surface on a side opposite to the front surface and a post-heating step of supplying the heating fluid to the rear surface on the side opposite to the front surface of the substrate, in a state in which the supply of the low surface tension liquid to the front surface is stopped, before the start of a spin dry step after the completion of the low surface tension liquid supply step.Type: GrantFiled: June 13, 2016Date of Patent: December 17, 2019Assignee: SCREEN Holdings Co., Ltd.Inventor: Tetsuya Emoto
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Patent number: 10510529Abstract: Methods for depositing silicon oxycarbonitride (SiOCN) thin films on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor and a second reactant that does not include oxygen. In some embodiments the methods allow for the deposition of SiOCN films having improved acid-based wet etch resistance.Type: GrantFiled: September 18, 2017Date of Patent: December 17, 2019Assignee: ASM IP Holding B.V.Inventors: Toshiya Suzuki, Viljami J. Pore
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Patent number: 10510530Abstract: The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.Type: GrantFiled: November 15, 2018Date of Patent: December 17, 2019Assignee: ASM International N.V.Inventors: Noboru Takamure, Atsuki Fukazawa, Hideaki Fukuda, Antti Niskanen, Suvi Haukka, Ryu Nakano, Kunitoshi Namba
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Patent number: 10510531Abstract: A method of fabrication of a semiconductor element includes a step of rapid heat treatment in which a substrate comprising a base having a resistivity greater than 1000 Ohm·cm is exposed to a peak temperature sufficient to deteriorate the resistivity of the base. The step of rapid heat treatment is followed by a curing heat treatment in which the substrate is exposed to a curing temperature between 800° C. and 1250° C. and then cooled at a cooldown rate less than 5° C./second when the curing temperature is between 1250° C. and 1150° C., less than 20° C./second when the curing temperature is between 1150° C. and 1100° C., and less than 50° C./second when the curing temperature is between 1100° C. and 800° C.Type: GrantFiled: November 3, 2017Date of Patent: December 17, 2019Assignee: SoitecInventors: Oleg Kononchuk, Isabelle Bertrand, Luciana Capello, Marcel Broekaart
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Patent number: 10510532Abstract: Disclosed is a method of fabricating a gallium nitride substrate using a plurality of ion implantation processes.Type: GrantFiled: May 29, 2018Date of Patent: December 17, 2019Assignee: Industry-University Cooperation Foundation Hanyang UniversityInventors: Jea Gun Park, Jae Hyoung Shim, Tae Hun Shim
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Patent number: 10510533Abstract: A method of providing an out-of-plane semiconductor structure and a structure fabricated thereby is disclosed. The method comprises acts of: providing a substrate defining a major surface; providing a template layer having a predetermined template thickness on the major surface of the substrate; forming a recess in the template layer having a recess pattern and a recess depth smaller than the template thickness; and epitaxilally growing a semiconductor structure from the recess. A planar shape of the recess pattern formed in the template layer substantially dictates an extending direction of the semiconductor structure.Type: GrantFiled: March 20, 2017Date of Patent: December 17, 2019Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Martin C. Holland, Georgios Vellianitis, Matthias Passlack
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Patent number: 10510534Abstract: An apparatus for fabricating a thin film is provided. The apparatus includes a tube including one end and another end, a first heater supplying heat to a first region, adjacent to the one end, of the tube, a second heater supplying heat to a second region, adjacent to the another end, of the tube and disposed in parallel to the first heater along the tube, a gas inlet through which a source gas is supplied to the one end of the tube, and a gas outlet through which the source gas is exhausted from the another end of the tube.Type: GrantFiled: September 11, 2017Date of Patent: December 17, 2019Assignee: IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)Inventors: Eunkyu Kim, Changsoo Park
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Patent number: 10510535Abstract: The invention relates to a method for manufacturing an optoelectronic device (50) including wire-like, conical, or frustoconical semiconductor elements (20) predominantly comprising a III-V compound. Each semiconductor element extends along an axis and includes a portion (54), the side surfaces (55) of which are covered with a shell (56) including at least one active region (31), wherein the portions are created by continuous growth in a reactor, and wherein the temperature in the reactor varies in an uninterrupted manner from a first temperature value that favors growth of first crystallographic planes perpendicular to said axis, to a second temperature value that is strictly lower than the first temperature value and favors growth of second crystallographic planes parallel to said axis.Type: GrantFiled: July 13, 2016Date of Patent: December 17, 2019Assignees: Aledia, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Universite Grenoble AlpesInventors: Philipe Gilet, Amélie Dussaigne, Damien Salomon, Joel Eymery, Christophe Durand
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Patent number: 10510536Abstract: Methods for depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber are provided. The method may include: heating the substrate to a deposition temperature of less than 550° C.; simultaneously contacting the substrate with a silicon precursor, a n-type dopant precursor, and a p-type dopant precursor; and depositing the co-doped polysilicon film on the surface of the substrate. Related semiconductor structures are also disclosed.Type: GrantFiled: March 29, 2018Date of Patent: December 17, 2019Assignee: ASM IP Holding B.V.Inventors: David Kohen, John Tolle
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Patent number: 10510537Abstract: A pixel structure, a driving method thereof, and a display device are provided. The accommodation chamber of the pixel structure includes: a first substrate and a second substrate opposite to each other, an accommodation space being formed therebetween; a light absorption layer in the accommodation space, including a flowable insulating liquid layer; a transparent thin film in the accommodation space, located between the insulating liquid layer and the second substrate, a refractive index of the transparent thin film being less than or equal to that of the insulating liquid layer. The accommodation chamber is in one of the at least two following states: in a first state, the insulating liquid layer is separated from the transparent thin film such that light rays from the second substrate are totally reflected; and in a second state, the insulating liquid layer and the transparent thin film at least are partially in direct contact.Type: GrantFiled: October 2, 2017Date of Patent: December 17, 2019Assignees: BOE TECHNOLOGY GROUP CO., LTD., BEIJING BOE DISPLAY TECHNOLOGY CO., LTD.Inventors: Zhidong Wang, Yun Qiu, Yanfeng Wang