Abstract: Methods, systems, and devices for self-referencing sensing schemes with coupling capacitance are described. A sense component of a memory device may include a capacitive coupling between two nodes of the sense component. The capacitive coupling may, in some examples, be provided by a capacitive element of the sense component or an intrinsic capacitance between features of the sense component. An example of a method employing such a sense component for detecting a logic state stored by a memory cell may include generating a first sense signal at one of the nodes while the node is coupled with the memory cell, and generating a second sense signal at the other of the nodes while the other node is coupled with the memory cell. The sense signals may be based at least in part on the capacitive coupling between the two nodes.

Abstract: A random bit cell includes a latch, a voltage selector, a first non-volatile storage element, and a second non-volatile storage element. The latch has a first terminal coupled to a first local bit line, and a second terminal coupled to a second local bit line. The first non-volatile storage element has a first terminal coupled to the first local bit line, and a second terminal coupled to the voltage selector. The second non-volatile storage element has a first terminal coupled to the second local bit line, and a second terminal coupled to the voltage selector. During an initial operation, the first terminals of the first non-volatile storage element and the second non-volatile storage element are floating. During an enroll operation, the first terminals of the first non-volatile storage element and the second non-volatile storage element receive a program voltage from the voltage selector.

Abstract: The present disclosure includes apparatuses and methods related to performing logical operations using sensing circuitry. An example apparatus comprises an array of memory cells and sensing circuitry coupled to the array of memory cells. The sensing circuitry includes a primary latch and a secondary latch. The primary latch is coupled to a pair of complementary sense lines and selectively coupled to a pair of adjacent complementary sense lines. The secondary latch is selectively coupled to the primary latch. The primary latch and secondary latch are configured to shift a data value between the pair of adjacent complementary sense lines and the primary latch. The primary latch and secondary latch are configured to shift the data value from the pair of adjacent complementary sense lines without activating a row line.

Abstract: A semiconductor system includes a second semiconductor device. The second semiconductor device configured to receive an external clock, first and second code signals, and input and output data. The second semiconductor device configured to adjust a delay amount depending on a combination of the first and second code signals, generate an internal clock by delaying the external clock according to the adjusted delay amount, and input and output data in synchronization with the internal clock. The second semiconductor device is adjusted in a driving force for driving the internal clock, depending on a voltage level of a node included in a path through which the internal clock is delayed.

Abstract: A memory device includes an internal clock generator, a deserializer, a data comparator, and a clock controller. The internal clock generator generates a plurality of internal clock signals, which have different phases from each other, by dividing a clock signal received from a host. The deserializer deserializes serial test data received from a host as pieces of internal data using the internal clock signals. The data comparator compares reference data with the internal data. The clock controller corrects a clock dividing start time point of the clock signal of the internal clock generator based on the result of the comparison of the reference data and the internal data.

Abstract: A driver of a multi-level signaling interface is provided. The driver may be configured reduce noise in a multi-level signal (e.g., a pulse amplitude modulation signal) generated by the driver using switching components of different polarities. The driver may include a pull-up circuit and/or a pull-down circuit. The pull-up circuit and the pull-down circuit may include at least one switching component of a first polarity (e.g., nmos transistor) and at least one switching component of a second polarity different from the first polarity (e.g., pmos transistor). Such a configuration of pull-up and pull down circuits may generate a more linear relationship between an output current and an output voltage of an output of the driver, thereby improving one or more characteristics of the multi-level signal.

Abstract: There is provided a magnetic memory that can suppress the increase in manufacturing costs while recording multivalued information in one memory cell (10), the memory including: first and second tunnel junction elements (100a, 100b) each having a laminated structure including a reference layer (202) with a fixed magnetization direction, a recording layer (206) with a reversible magnetization direction, and an insulating layer (204) sandwiched between the reference layer and the recording layer; a first selection transistor (300) electrically connected to first ends of the first and second tunnel junction elements; a first wire (400a) electrically connected to a second end of the first tunnel junction element; and a second wire (400b) electrically connected to a second end of the second tunnel junction element.

Abstract: A magnetic structure includes a magnetic tunnel junction based on a synthetic antiferromagnetic free layer which is regulated by an electric field, and a spin-orbit layer located below the magnetic tunnel junction. The transformation from the antiferromagnetic coupling to the ferromagnetic coupling of the free layer based on a synthetic antiferromagnetic multilayer structure is controlled by an electric field. A spin-orbit torque magnetic random access memory, which includes the magnetic structure, is able to realize stable data writing under the combined interaction of electric field and current, and has advantages of simple structure for scaling, ultralow power consumption, ultrahigh speed of switching, radiation resistance and non-volatility.

Abstract: Techniques for reading a Multi-Bit Cell (MBC) can include sensing a state parameter value, such as source line voltage, and applying a successive one of N programming parameter values, such as successive programming currents, between instances of sensing the state parameter values. The N successive programming parameter values can be selected to program the state of a corresponding one of N cell elements of the MBC to a respective state parameter value. Successive ones of the sensed state parameter values can be compared to determine N state change results, which can be used to determine the read state of the MBC.

Abstract: A semiconductor memory device includes a memory cell array including memory cells, a row decoder connected to the memory cell array through first conductive lines, write drivers and sense amplifiers connected to the memory cell array through second conductive lines, a voltage generator that supplies a first voltage to the row decoder and supplies a second voltage to the write drivers and sense amplifiers, and a data buffer that is connected to the write drivers and sense amplifiers and transfers data between the write drivers and sense amplifiers and an external device. At least one of the row decoder, the write drivers and sense amplifiers, the voltage generator, and the data buffer includes a first ferroelectric capacitor to amplify a voltage.

Abstract: Methods, systems, and devices for time-based access of memory cells in a memory array are described herein. During a sense portion of a read operation, a selected memory cell may be charged to a predetermined voltage level. A logic state stored on the selected memory cell may be identified based on a duration between the beginning of the charging and when selected memory cell reaches the predetermined voltage level. In some examples, time-varying signals may be used to indicate the logic state based on the duration of the charging. The duration of the charging may be based on a polarization state of the selected memory cell, a dielectric charge state of the selected state, or both a polarization state and a dielectric charge state of the selected memory cell.

Abstract: Apparatuses and methods for providing power for memory refresh operations are described. An example apparatus includes refresh circuits, a power amplifier, a power circuit, and a power control circuits. The refresh circuits are configured to refresh memory cells of a memory bank. The power amplifier is configured to provide power when activated to the refresh circuits. The power provided by the power amplifier has a first voltage. The power circuit is configured to receive a power supply voltage and to provide power when activated to the refresh circuits. The power provided by the power amplifier has a second voltage. The power control circuit is configured to compare the first voltage and the target voltage and to provide an activation signal to control activation of the power circuit having an active duration based at least in part on the comparison.

Abstract: A memory subsystem is disclosed comprising at least one memory module, the memory module having a substrate to which a plurality of memory chips is mounted and a voltage regulator, the voltage regulator receiving a power supply signal from a system power supply and outputting two or more power signals, each power signal providing a different, regulated voltage, which regulated voltages are each routed to each of the memory chips; and a redundant voltage regulator external to and not mounted on the memory module and configured to output two or more power signals, providing external different, regulated voltages which are the same voltages as the voltages output by the voltage regulator on the memory module, and supplying the two or more signals to the memory module.

Abstract: A semiconductor device includes a delay time adjustment circuit and an address input circuit. The delay time adjustment circuit adjusts a point in time when charges are supplied to internal nodes according to a voltage level of a back-bias voltage in response to a test mode signal. The delay time adjustment circuit also delays an active signal by a first delay time varying according to amounts of charge of the internal nodes to generate a bank selection signal. The address input circuit is driven by the back-bias voltage. The address input circuit receives an address in response to the bank selection signal to generate an internal address. The address input circuit delays the address by a second delay time varying according to a voltage level of the back-bias voltage.

Abstract: An operation method of a memory device which includes a plurality of memory cells connected to a plurality of word lines includes receiving a first activate command from an external device, receiving at least one operation command from the external device after the first activate command is received, receiving a precharge command after receiving the at least one operation command, and receiving a second activate command from the external device after the precharge command is received. When the at least one operation command does not include a write command, the second activate command is received after a first precharge reference time elapses from a time at which the precharge command is received. When the at least one operation command includes the write command, the second activate command is received after a second precharge reference time elapses from the time at which the precharge command is received.

Abstract: Apparatuses and methods for self-refreshing a plurality of dies are described. An example apparatus includes a first die including a first bank and a second bank, the first bank and the second bank including memory cells; and a second die vertically stacked with the first die, the second die including a third bank and a fourth bank, the third bank and the fourth bank including memory cells. The third bank is vertically aligned with the first bank. The first bank and the fourth bank are configured to be refreshed prior to refreshing the second bank and the fourth bank.

Abstract: A memory in which a write cycle time is longer than time for one clock cycle can be mounted on a processor. The processor includes a processor core, a bus, and a memory section. The memory section includes a first memory. A cell array of the first memory is composed of gain cells. The processor core is configured to generate a write enable signal. The first memory is configured to generate a wait signal on the basis of the write enable signal. The processor core is configured to delay access to the memory section by time for n clock cycles, on the basis of the wait signal. (n+1) clock cycles can be assigned to a write cycle of the first memory.

Abstract: Techniques for reading a Multi-Bit Cell (MBC) can include sensing a state parameter value, such as source line voltage, and applying a successive one of N programming parameter values, such as successive programming currents, between instances of sensing the state parameter values. The N successive programming parameter values can be selected to switch the state of a corresponding one of N cell elements of the MBC. Successive ones of the sensed state parameter values can be compared to determine N state change results, which can be used to determine the read state of the MBC.

Abstract: Techniques for reading a Multi-Bit Cell (MBC) can include sensing a state parameter value, such as source line voltage, and applying a successive one of N programming parameter values, such as successive programming currents, between instances of sensing the state parameter values. The N successive programming parameter values can be selected to switch the state of a corresponding one of N cell elements of the MBC. Successive ones of the sensed state parameter values can be compared to determine N state change results, which can be used to determine the read state of the MBC.

Abstract: Techniques for reading a Multi-Bit Cell (MBC) can include sensing a state parameter value, such as source line voltage, and applying a successive one of N programming parameter values, such as successive programming currents, between instances of sensing the state parameter values. The N successive programming parameter values can be selected to switch the state of a corresponding one of N cell elements of the MBC. Successive ones of the sensed state parameter values can be compared to determine N state change results, which can be used to determine the read state of the MBC.

Abstract: A magnetic wall utilization-analog memory element includes a magnetic wall driving layer including a magnetic wall, a first region, a second region, and a third region located between the first region and the second region, a magnetization fixed layer provided at a the third region through a nonmagnetic layer, and a lower electrode layer provided at a position in the third region that overlaps the magnetization fixed layer in plan view on a second surface opposite to a first surface on which the magnetization fixed layer is provided.

Abstract: Methods, systems, and devices for storing and reading data at a memory device are described. A memory device may utilize one or more storage states to store data within a data word. The memory device may exhibit higher data leakage or more power consumption when storing or reading a first storage state compared to storing or reading one or more other storage states. In some cases, the memory device may generate a second data word corresponding to a first data word by modifying each symbol type of the first data word to generate a different symbol type for the second data word. A memory device may reduce the occurrence of a storage state associated with large data leakage, or high-power consumption, or both. Further, the memory device may generate and store an indicator indicating the transformation of a corresponding data word.

Abstract: A semiconductor memory device includes a memory cell array including one or more memory cells each coupled between a wordline and a bitline, a sense amplifier configured to amplify a voltage of a global wordline, a wordline decoder including a plurality of wordline switches coupling the wordline and the global wordline, and a control circuit configured to control the wordline decoder and the sense amplifier.

Abstract: Systems, integrated circuits, and methods to utilize access signals to facilitate memory operations in scaled arrays of memory elements are described. In at least some embodiments, a non-volatile memory device can include a cross-point array having resistive memory elements and line driver. The line driver can be configured to access a resistive memory element in the cross-point array.

Abstract: Methods, systems, and devices for a pulsed integrator and memory techniques are described. A first device may facilitate discharging a memory cell using at least one current pulse until a voltage associated with the memory cell reaches a reference voltage. The discharge time of the memory cell may be determined based at least in part on a duration of at least one current pulse. In some examples, a state of the memory cell may be determined based at least in part on a discharge time.

Abstract: A matrix-vector multiplication device includes a memory crossbar array with row lines, column lines, and junctions. Each junction comprises a programmable resistive element and an access element. A signal generator is configured to apply programming signals to the resistive elements to program conductance values for the matrix-vector multiplication and a readout circuit is configured to apply read voltages to the row lines and to read out current values of the column lines. Control circuitry is configured to control the signal generator and the readout circuit and to select, via the access terminals, a plurality of resistive elements in parallel according to a predefined selection scheme which applies the signals and/or the read voltages in parallel to resistive elements which do not share the same row and column line and applies the programming signals and/or the read voltages to at most one resistive element per row line and column line.

Abstract: Methods, systems, and devices for programming enhancement in memory cells are described. An asymmetrically shaped memory cell may enhance ion crowding at or near a particular electrode, which may be leveraged for accurately reading a stored value of the memory cell. Programming the memory cell may cause elements within the cell to separate, resulting in ion migration towards a particular electrode. The migration may depend on the polarity of the cell and may create a high resistivity region and low resistivity region within the cell. The memory cell may be sensed by applying a voltage across the cell. The resulting current may then encounter the high resistivity region and low resistivity region, and the orientation of the regions may be representative of a first or a second logic state of the cell.

Abstract: A system installed on an aircraft. The system includes a memory storing static information in one or more optical fibre gratings; and an interrogator. The interrogator includes a light source configured to transmit interrogation light to the memory, a receiver configured to receive return light from the memory, and an analyser configured to analyse the return light to obtain the static information.

Abstract: Some embodiments include apparatuses and methods using a substrate, a first memory cell block including first memory cell strings located over the substrate, first data lines coupled to the first memory cell strings, a second memory cell block including second memory cell strings located over the first memory cell block, second data lines coupled to the second memory cell strings, first conductive paths located over the substrate and coupled between the first data lines and buffer circuitry of the apparatus, and second conductive paths located over the substrate and coupled between the second data lines and the buffer circuitry. No conductive path of the first and second conductive paths is shared by the first and second memory cell blocks.

Abstract: A nonvolatile semiconductor memory device includes a control circuit configured to control a soft program operation of setting nonvolatile memory cells to a first threshold voltage distribution state of the nonvolatile memory cells. When a characteristic of the nonvolatile memory cells is in a first state, the control circuit executes the soft program operation by applying a first voltage for setting the nonvolatile memory cells to the first threshold voltage distribution state to first word lines, and applying a second voltage higher than the first voltage to a second word line. When the characteristic of the nonvolatile memory cells is in a second state, the control circuit executes the soft program operation by applying a third voltage equal to or lower than the first voltage to the first word lines and applying a fourth voltage lower than the second voltage to the second word line.

Abstract: Discussed herein are systems and methods for charging an access line to a non-volatile memory cell during a standby state, such as to prevent or mitigate standby-state charge loss. An embodiment of a memory device comprises a memory cell, a string driver circuit, and a charging circuit. The stringer driver circuit is coupled to the memory cell via a local word line, and has a common p-well. The charging circuit, in response to a voltage of a global word line of the memory device falling below a reference voltage during a standby state, couple a supply voltage to the common p-well of the string driver circuit to charge the global word line to a positive bias potential. The memory device includes a leakage compensation circuit to compensate for the junction leakage.

Abstract: According to one embodiment, a semiconductor memory device includes: a memory cell array; a plurality of bit lines respectively connected to memory cells; a word line commonly connected to the memory cells; and a control circuit. The control circuit programs a first memory cell of a first state and a second memory cell of a second state by using a first program pulse. The control circuit applies a first voltage to a first bit line connected to the first memory cell, and applies a second voltage lower than the first voltage to a second bit line connected to the second memory cell at a first time within a first period during which the first program pulse is applied. The control circuit applies the second voltage to the first and second bit lines at a second time within the first period.

Abstract: Strings of non-volatile memory cells include one or more joint regions adjacent to dummy non-volatile memory cells. During erase operations, different voltage levels are used for different dummy word lines coupled to respective dummy non-volatile memory cells. For example, a selection circuit may set a voltage level of a particular dummy word line to a voltage level greater than a different dummy word line. In another example, the selection circuit may determine a voltage level for a given dummy word line based on a distance between a non-volatile memory cell coupled to the given dummy word line and a selection device included in a string of non-volatile memory cells. Electron holes generated using the dummy word lines during erase operations may neutralize undesired trapped charges in a non-volatile memory string, thereby reducing disparity in erase times for different strings in the non-volatile memory circuit.

Abstract: According to one embodiment, a memory system includes a non-volatile semiconductor memory that includes a memory cell and a controller having a memory storing a write parameter used in a write operation to the memory cell. The controller instructs the non-volatile semiconductor memory to perform the write operation to the memory cell using the write parameter, receives, from the non-volatile semiconductor memory, a result of checking of the write parameter which is obtained in the write operation and updates the write parameter stored in the memory on the basis of the result of checking of the write parameter.

Abstract: Methods, systems and computer-readable storage media for determining a new optimal read threshold voltage associated with a group of pages of non-volatile memory. It is determined whether the current optimal read threshold voltage associated with the group of pages is out of tolerance based at least in part on a retention drift history associated with the group of pages. Upon determining that the current optimal read threshold voltage is out of tolerance, reference cells associated with the group of pages are written with a pattern having a known statistical distribution of ones and zeroes. The new optimal read threshold voltage associated with the group of pages is determined by reading the reference cells, and the retention drift history associated with the group of pages is updated with the new optimal read threshold voltage and an indication of a new reference cell generation.

Abstract: Embodiments disclosed herein relate to operating a memory cell as an anti-fuse, such as for use in phase change memory, for example.

Abstract: This disclosure discloses a shift register, a method for driving the same, a gate integrated driver circuit, and a display device, and the shift register includes an input control circuit, a first output control circuit, a pull-up control circuit, a first pull-down control circuit, and a second output control circuit, where the first output control circuit and the second output control circuit operate in cooperation to provide a high-level signal and a low-level signal respectively, and the pull-up control circuit and the second output control circuit operate in cooperation to reset a signal output terminal.

Abstract: A shift register unit includes a common circuit and an output circuit. The common circuit is configured to control a potential at a pull-up node under the control of an input end, a resetting end and a first clock signal input end. The output circuit is configured to control 2M gate driving signal output ends to output gate driving signals respectively under the control of the pull-up node, a noise reduction control end and an output control end, where M is an integer greater than 1.

Abstract: A test control circuit includes a test mode generation circuit. The test mode generation circuit may be configured to generate, while in a fast access mode, a fast test mode signal based on information included in one of a plurality of mode signals and a fast set signal. The test mode generation circuit may be configured to generate, while in a normal mode, a normal test mode signal based on information included in two or more mode signals from the plurality of mode signals and a normal set signal.

Abstract: Memory systems and method of operating the same enable debugging of a memory system with vendor unique (VU) commands without using a physical cable connection to a debugging port on the memory system. In one aspect, a Universal Asynchronous Receiver-Transmitter (UART) protocol is serialized over a VU host protocol. In another aspect, Joint Test Action Group (JTAG) may be performed over UART or serial advanced technology attachment (SATA).

Abstract: A memory system and an operating method thereof include: at least a CPU configured to generate a special command; at least a PCIe link coupled with the CPU, wherein the PCIe link includes at least a PCIe switch; and a plurality of memory devices connected with the PCIe switch, wherein each of the plurality of memory devices includes a memory controller, an operational mode switch, and a plurality of memory components, and the operational mode switch is configured to perform a loopback from the memory controller corresponding to the special command at loopback operational mode.

Abstract: Methods, systems, techniques, and devices for operating a ferroelectric memory cell or cells are described. Groups of cells may be operated in different ways depending, for example, on a relationship between cell plates of the group of cells, pages of cells, and/or sections of cells. Cells may be selected in pairs or in larger multiples in order to accommodate an electric current relationship (such as a short) between two or more cells within a group, a page, and/or a section. When performing an access based on a smaller page size, a larger page size of cells may be selected to accommodate a short between plates within the smaller page, the larger page, and/or a section of memory that includes the smaller page or the larger page.

Abstract: A spin transfer torque magnetic random access memory (STT-MRAM) device according to the present embodiment comprises: an STT-MRAM memory array which includes a data storage unit for storing data, a defect area address storage unit for storing an address of a defect area, and a spare area for storing data of a failed area; and a bypass determination unit which includes a volatile information storage element for storing the address of the defect area, stored in the defect area address storage unit and provided thereto, and when memory array access occurs, compares an access address with the address of the defect area stored in the volatile information storage element and causes the memory array access to bypass to the spare area.

Abstract: The invention includes methods and systems for identifying targets for therapeutic intervention for various diseases and conditions; and provides specific materials and methods for treatment of specific diseases and conditions.

Abstract: Described herein are various systems and methods for customizing cell culture media for optimized cell proliferation based on genetic traits of the cells. Factors of the cells, such as genetics, can determine the optimum cell culture conditions for growth and use of individual cells in vitro. In certain embodiments, genetics can determine sensitivity from a toxic perspective. In certain embodiments, genetics can determine what concentration(s) of growth factor(s) and nutrient(s) are required for optimum growth.

Abstract: The present disclosure provides a method for enriching for multiple genomic regions using a first bait set that selectively hybridizes to a first set of genomic regions of a nucleic acid sample and a second bait set that selectively hybridizes to a second set of genomic regions of the nucleic acid sample. These bait set panels can selectively enrich for one or more nucleosome-associated regions of a genome, said nucleosome-associated regions comprising genomic regions having one or more genomic base positions with differential nucleosomal occupancy, wherein the differential nucleosomal occupancy is characteristic of a cell or tissue type of origin or disease state.

Abstract: In comparison to conventional sequencing pileup algorithms, the process described herein generates sequencing pileups that contains additional information not typically reported by conventional algorithms while also consuming fewer computational resources (e.g., time, processing power, and memory). First, each of a FASTA reference genome and BAM sequence read files are converted to an internal representation. This enables the rapid iteration across nucleotide bases of the sequence reads to determine support characteristics that summarize information of nucleic acid molecules corresponding to positions across the reference genome. Next, the support characteristics of positions across the reference genome are stored through a memory allocation process that utilizes a first and a second temporary storage. This enables the convenient freeing of one temporary storage while the other temporary storage is being used.

Abstract: Systems and methods for determining a source of a variant include receiving a plurality of variants obtained from a biological sample, the variants being of unknown source upon receipt, and receiving, for each of the variants, a plurality of values for a plurality of covariates from the biological sample. The variants are input into a source assignment classifier to determine a source for each of the variants, the source being one of a plurality of possible sources. The source assignment classifier includes a plurality of coefficients associated with the plurality of covariates and a function that receives as input the values associated with each variant and the coefficients and outputs the determined source of each of the variants.

Abstract: Embodiments relate to methods and systems for analyzing genomic data, such as genetic variants. Some embodiments relate to the efficient analysis and presentation of certain genetic variants of an individual.

Abstract: A method for computational drug design using an evolutionary algorithm, comprises evaluating virtual molecules according to vector distance (VD) to at least one achievement objective that defines a desired ideal molecule. In one method the invention comprises defining a set of n achievement objectives (OA1-n), where n is at least one; defining a population (PG=0) of at least one molecule; selecting an initial population (Pparent) of at least one molecule (I1-In) from the population (PG=0); and evaluating members (I1-In) of the initial population (Pparent) against at least one of the n achievement objectives (OA1-x), where x is from 1 to n.