Abstract: A mask plate includes a plurality of first supporting and shielding strips, and a plurality of second supporting and shielding strips. The second supporting and shielding strips and the first supporting and shielding strips perpendicularly intersect. The first supporting and shielding strips and the second supporting and shielding strips are provided with at least one objective supporting and shielding strip, and an edge of a predetermined surface of the objective supporting and shielding strip parallel to an extending direction of the objective supporting and shielding strip is provided with a thinned area; the thinned area extends in the extending direction of the objective supporting and shielding strip, and has a thickness smaller than a thickness of other areas except the thinned area; and the predetermined surface is a surface of the objective supporting and shielding strip facing a deposition material when a mask evaporation is performed through the mask plate.

Abstract: A coated metallic substrate including at least a first coating of aluminum, such first coating having a thickness below 5 ?m and being directly topped by a second coating including from 0.5 to 5.9% by weight of magnesium, the balance being zinc.

Abstract: A coated article includes a low emissivity (low-E) coating supported by a glass substrate. The low-E coating includes at least one silver (Ag) based infrared (IR) reflecting layer(s) that is provided adjacent to and contacting at least one protective metallic or substantially metallic doped silver layer in order to improve chemical durability characteristics of the low-E coating. The silver based IR reflecting layer and adjacent protective doped silver layer are part of a low emissivity (low-E) coating, and may be sandwiched between at least transparent dielectric layers. A barrier layer including Ni and/or Cr may be provided over and directly contacting the protective doped silver layer in order to further improve durability of the low-E coating.

Abstract: Embodiments of the disclosure relate to systems and methods for forming devices on a substrate. For example, a method for forming devices on a substrate can include projecting one or more ion beams from one or more ion beam chambers to form one or more devices on a first surface of a substrate and projecting one or more ion beams from one or more ion beam chambers to form one or more devices on a second surface of a substrate. In these embodiments, the first surface and the second surface are on opposite sides of the substrate. Therefore, the ion beams can form the devices on both sides of the substrate.

Abstract: Apparatus for depositing germanium and carbon onto one or more substrates comprises a vacuum chamber, at least first and second magnetron sputtering devices and at least one movable mount for supporting the one or more substrates within the vacuum chamber. The first magnetron sputtering device is configured to sputter germanium towards the at least one mount from a first sputtering target comprising germanium, thereby defining a germanium sputtering zone within the vacuum chamber. The second magnetron sputtering device is configured to sputter carbon towards the at least one mount from a second sputtering target comprising carbon, thereby defining a carbon sputtering zone within the vacuum chamber.

Abstract: A transport carrier includes a carrier body being able to hold a substrate that is a deposition target, by which the substrate is transported in a deposition apparatus while being held, wherein the carrier body includes magnetic chucking means which magnetically chucks a mask which shields a non-deposition region of the substrate through the substrate and holds the mask in a state in which the mask has come into contact with a film formation surface of the substrate.

Abstract: A chemical gas phase deposition process comprises steps of providing a high vacuum chamber, and inside the high vacuum chamber: positioning a substrate surface; positioning a mask parallel to the substrate surface, whereby the mask comprises one or more openings; adjusting a gap of determined dimension between the substrate surface and the mask; and orienting a plurality of chemical precursor beams of at least one precursor species towards the mask with line of sight propagation, each of the plurality of chemical precursor beams being emitted from an independent punctual source, and molecules of the chemical precursor pass through the one or more mask openings to impinge onto the substrate surface for deposition thereon. At least a part of the chemical precursor molecules decompose on the substrate surface at a decomposition temperature.

Abstract: Aligned carbon nanotube are synthesized using an electric potential generated by a thermocouple and strips of first and second materials. The first and second materials have different chemical compositions, and include at least one of an oxide and a metal. A catalyst is deposited on and/or around the materials, and can also be deposited on the substrate. The substrate is exposed to the electric potential in the presence of a carbon-containing gas during chemical vapor deposition. This causes carbon nanotubes to grow from the catalyst, in alignment with the electric potential.

Abstract: A barrier film for use in laminated packaging materials for liquid food products, comprising a polymer film substrate and coated onto a first side of the polymer film substrate, by plasma-enhanced chemical vapor deposition (PECVD) in a vacuum process, a first coating layer of silicon oxide having the general composition formula SiOxCy, wherein x is from 1.5 to 2.2, and y is from 0.15 to 0.8, and a second coating layer of an amorphous diamond-like carbon (DLC), which is directly adjacent and contacting the first coating layer, the barrier film providing gas and water vapor barrier properties and mechanical durability in a packaging material and packages made thereof.

Abstract: Methods for depositing hardmask materials and films, and more specifically, for depositing phosphorus-doped, silicon nitride films are provided. A method of depositing a material on a substrate in a processing chamber includes exposing a substrate to a deposition gas in the presence of RF power to deposit a phosphorus-doped, silicon nitride film on the substrate during a plasma-enhanced chemical vapor deposition (PE-CVD) process. The deposition gas contains one or more silicon precursors, one or more nitrogen precursors, one or more phosphorus precursors, and one or more carrier gases. The phosphorus-doped, silicon nitride film has a phosphorus concentration in a range from about 0.1 atomic percent (at %) to about 10 at %.

Abstract: A SiC chemical vapor deposition device according to the present embodiment includes a placement table on which a SiC wafer is placed; and a furnace body that covers the placement table, in which the furnace body has a side wall and a ceiling that has a gas supply port for supplying raw material gas to the inside of the furnace body, covers a periphery of the gas supply port, and is positioned above the placement table, and emissivity of an inner surface of the ceiling is lower than that of an inner surface of the side wall.

Abstract: An apparatus, a method and a valve with a reactive chemical inlet, a reaction chamber outlet, and a closure having an open and closed configuration to open and close, respectively, a route from the reactive chemical inlet to the reaction chamber outlet, the valve further including an additional cleaning chemical inlet at a downstream side of the closure to purge the closure.

Abstract: A chamber for use in implementing a deposition process includes a pedestal for supporting a semiconductor wafer. A silicon ring is disposed over the pedestal and surrounds the semiconductor wafer. The silicon ring has a ring thickness that approximates a semiconductor wafer thickness. The silicon ring has an annular width that extends a process zone defined over the semiconductor wafer to an extended process zone that is defined over the semiconductor wafer and the silicon ring. A confinement ring defined from a dielectric material is disposed over the pedestal and surrounds the silicon ring. A showerhead having a central showerhead area and an extended showerhead area is also included. The central showerhead area is substantially disposed over the semiconductor wafer and the silicon ring. The extended showerhead area is substantially disposed over the confinement ring.

Abstract: A deposition apparatus includes a chamber, a deposition source, and a stage disposed in the chamber with a target object mounted thereon. The deposition apparatus further includes a first plate coupled to the chamber, and a second plate disposed between the first plate and the stage, wherein the second plate includes a plurality of diffusion holes. The deposition apparatus additionally includes a heat dissipation member in contact with the first plate and the second plate, wherein the heat dissipation member includes a plurality of sidewall portions, wherein the plurality of sidewall portions are connected to each other. The deposition apparatus further includes a spacer coupled to a first sidewall portion of the plurality of sidewall portions and disposed between the first plate and the second plate, wherein the spacer extends parallel to the first sidewall portion.

Abstract: Methods and systems for direct lithographic pattern definition based upon electron beam induced alteration of the surface chemistry of a substrate are described. The methods involve an initial chemical treatment for global definition of a specified surface chemistry (SC). Electron beam induced surface reactions between a gaseous precursor and the surface are then used to locally alter the SC. High resolution patterning of stable, specified surface chemistries upon a substrate can thus be achieved. The defined patterns can then be utilized for selective material deposition via methods which exploit the specificity of certain SC combinations or by differences in surface energy. It is possible to perform all steps in-situ without breaking vacuum.

Abstract: Devices, systems, and methods are contemplated for depositing metals to the surface of a substrate. A first precursor ink including a metal is applied to a surface of the substrate, and the precursor ink is reduced to deposit the metal to the substrate, preferably by thermal reduction, forming a first metal layer. A second precursor ink having a second metal is then applied to the substrate, at least partially over the first metal layer. The second precursor ink is then reduced, typically by chemical reduction, depositing the second metal over the first metal layer in a globular fashion. Precursor inks are also disclosed having an alkyl metal carboxylate, a cyclic amine, and at least one of an ester, a hydrocarbon, or an ether.

Abstract: Compositions and methods for etching cobalt chromium alloys are disclosed. The compositions generally include at least two mineral acids, certain component metals of the alloy to be etched, and optionally iron (Fe). For example, when etching a cobalt chromium molybdenum alloy, the metals may include chromium (Cr), molybdenum (Mo), and optionally, cobalt (Co). The at least two mineral acids may include hydrochloric acid (HCl), nitric acid (HNO3), and hydrofluoric acid (HF). The methods provide for etching an entire surface of a substrate or etching a surface of a substrate in a pattern using selective coating patterns and/or coating removal. Thus, unlimited patterns, as well as etch depths and variations in etch depths are achievable using the compositions and methods disclosed.

Abstract: A ruthenium etching solution including orthoperiodic acid and ammonia, the pH of the ruthenium etching solution being 3 or higher. In addition, a method for processing an object to be processed including etching an object to be processed including ruthenium, using the ruthenium etching solution, and a method for manufacturing a semiconductor element.

Abstract: The invention provides compositions useful for selectively etching ruthenium and/or copper. The compositions comprise certain periodate compounds, alkylammonium or alkylphosphonium hydroxides, carbonate or bicarbonate buffers, and water, wherein the pH of the composition is about 9 to about 12.5. The compositions of the invention are effectively utilized in the method of the invention and have been found to be capable of etching Cu and Ru at similar rates, i.e., >20 ?/min, while minimizing etch rates of dielectrics (<2 ?/min).

Abstract: A method includes operating a water electrolysis device for producing hydrogen and oxygen from water. A PEM electrolyzer (1) is integrated in a water circuit (4) in the electrolysis device. The water circuit (4) feeds reaction water as well as discharges excess water. The water circuit (4) is lead past the PEM electrolyzer (1) via a bypass conduit (14) on starting up the water electrolysis device.

Abstract: The present disclosure provides systems and methods for producing carbon products via electrochemical reduction from fluid streams containing a carbon-containing material, such as, for example, carbon dioxide. Electrochemical reduction systems and methods of the present disclosure may comprise micro- or nanostructured membranes for separation and catalytic processes. The electrochemical reduction systems and methods may utilize renewable energy sources to generate a carbon product comprising one or more carbon atoms (C1+ product), such as, for example, fuel. This may be performed at substantially low (or nearly zero) net or negative carbon emissions.

Abstract: A graphene ternary composite direct current-carrying plate includes an anode plate and a cathode plate. Placed between the anode plate and the cathode plate is a graphene composite layer. The graphene composite layer is doped with a certain proportion of graphene in the aluminum mesh frame. The plate of the invention has small thickness, low ohmic voltage drop, good porosity, and low current loss. This reduces the electrolysis power consumption, thereby significantly reducing the product cost and effectively promoting the industrial production market of the sodium chlorate electrolysis method. The plate also reduces energy consumption and is environmentally friendly.

Abstract: Provided is a catalyst for an electro-Fenton system. The catalyst includes one or more species of SO42?-functionalized transition metal oxide grains. Also provided is an electrode for an electro-Fenton system. The electrode includes the catalyst. Also provided is an electro-Fenton system that includes the catalyst, an electrode comprising the catalyst, and an aqueous electrolyte solution.

Abstract: The present disclosure relates to a method for preparing an ordered porous carbon materials with inexpensive carbon black. The method comprises: dispersing carbon black into a concentrated nitric acid to obtain a uniform dispersion; placing the dispersion in a reactor to perform a reaction by a one-step hydrothermal process; and washing and drying the reaction mixture to obtain an ordered porous carbon material in a honeycomb-like arrangement and rich in oxygen defects. The present disclosure also relates to an ordered porous carbon material prepared by the method, a method for electrocatalytically reducing carbon dioxide to formic acid under ambient temperature and atmospheric pressure by using the ordered porous carbon material, and a method for electrocatalytically reducing nitrogen to ammonia under ambient temperature and atmospheric pressure by using the ordered porous carbon material as a supported catalyst.

Abstract: A method for producing a metal strip coated with a coating that contains chromium metal and chromium oxide and is electrolytically deposited from an electrolyte solution that contains a trivalent chromium compound onto the metal strip by bringing the metal strip, which is connected as the cathode, into contact with the electrolyte solution. An efficient deposition of coating with a high proportion of chromium oxide is obtained by successively passing the metal strip through a plurality of electrolysis tanks. The electrolyte solution in at least the last electrolysis tank, as viewed in the strip travel direction, or in a rear group of electrolysis tanks has an average temperature of at most 40° C., and the electrolysis time, during which the metal strip is in electrolytically effective contact with the electrolyte solution in the last electrolysis tank or in the rear group of electrolysis tanks is less than 2.0 seconds.

Abstract: A composite metal porous body according to an aspect of the present invention has a framework of a three-dimensional network structure. The framework includes a porous base material and a metal film coated on the surface of the porous base material. The metal film contains titanium metal or titanium alloy as the main component.

Abstract: Aspects of the disclosure generally relate to an electroforming apparatus and method, including a support frame with at least one anode housing having a predetermined housing geometry. At least one anode can be carried by the at least one anode housing, and the at least one anode can also include a predetermined geometry.

Abstract: A treatment device has: a treatment tank provided with a constant temperature heater on the outer periphery; an electrolytic cell continuing from a pipe provided with a circulation pump; and a pipe for supply to the treatment tank from the electrolytic cell. Within the electrolytic cell are provided an anode and a cathode formed from diamond electrodes and a bipolar electrode disposed between the two. The treatment tank and the electrolytic cell are filled with a prescribed concentration of sulfuric acid. The treatment device is configured such that a persulfate solution such as peroxydisulfuric acid is generated by electrolysis of the sulfuric acid by making a prescribed current flow from a direct current power supply unit to the anode and the cathode, and this persulfate solution can be supplied to the treatment tank via the pipe.

Abstract: There is provided a threaded connection for pipe having an excellent galling resistance and an excellent appearance. A threaded connection for pipe according to the present embodiment includes a pin (3) and a box (4). The pin (3) and the box (4) have contact surfaces (34) and (44) that include thread parts (31) and (41), metal seal parts (32) and (42), and shoulder parts (33) and (43), respectively. The threaded connection for pipe includes a Zn—Ni alloy plating layer (100) on the contact surface (34) or (44) of at least one of the pin (3) and the box (4). The Zn—Ni alloy plating layer (100) contains Cu. The Cu content of the Zn—Ni alloy plating layer (100) is 4.5% by mass or less (zero excluded).

Abstract: A method for the production of a metal strip coated with a coating. The coating containing chromium metal and chromium oxide and is electrolytically deposited from an electrolyte solution that contains a trivalent chromium compound onto the metal strip by bringing the metal strip, which is connected as the cathode, into contact with the electrolyte solution. An effective deposition of the coating with a high chromium oxide portion is achieved by successively passing the metal strip at a predefined strip travel speed through a plurality of electrolysis tanks arranged successively in a strip travel direction. The first electrolysis tank is set to a low current density; a second electrolysis tank, which follows in the strip travel direction, is set to a medium current density; and a last electrolysis tank is set to a high current density, where the low current density is greater than 20 A/dm2.

Abstract: A film forming device for forming a metal film at a high current efficiency and a method for forming the metal film using the film forming device are provided. The film forming device to form the metal film includes an anode, a cathode, a porous membrane disposed between the anode and the cathode to be capable of contacting the cathode, a solution container defining a solution containing space between the anode and the porous membrane, and a power supply applying a voltage between the anode and the cathode. The porous membrane is composed of a polyolefin chain without an ion-exchange functional group.

Abstract: According to an embodiment, there is provided a substrate holder including: a first holding member; a second holding member; a clamper configured to clamp the first holding member and the second holding member; and a seal including a contact portion configured to contact at least one of the first holding member, the second holding member, and a substrate when the first holding member and the second holding member are clamped, in which the contact portion includes, in cross-section viewed in a plane passing a center of the substrate and perpendicular to a surface of the substrate, a first arc portion centered on a first point and a second arc portion centered on a second point different from the first point, and at least one of the first arc portion and the second arc portion has a curvature radius of 0.01 mm to 0.1 mm.

Abstract: An apparatus for maintaining trivalent chromium plating bath efficiency includes an aqueous electroplating bath, which includes trivalent chromium ions and a sulfur compound, and an ultraviolet (UV) radiation source that provides UV radiation to the bath effective to inhibit a reduction in plating efficiency of the bath.

Abstract: The present invention relates to a silica-glass crucible for pulling up single-crystal silicon therefrom by Czochralski method (CZ method) or for melting an optical-glass, which includes a crystallization promoter, and method of producing the silica-glass crucible in which a raw-material silica powder including Al and Ca at a specific molar concentration ratio is molded.

Abstract: Ingot puller apparatus for preparing silicon ingots that include a dopant feed system are disclosed. The dopant feed system include a dopant conduit having a porous partition member disposed across the dopant conduit. Solid dopant falls onto the partition member where it sublimes. The sublimed dopant is carried by inert gas through the partition member to contact and dope the silicon melt.

Abstract: Ingot puller apparatus for preparing silicon ingots that include a dopant feed system are disclosed. The dopant feed system include a dopant conduit having a porous partition member disposed across the dopant conduit. Solid dopant falls onto the partition member where it sublimes. The sublimed dopant is carried by inert gas through the partition member to contact and dope the silicon melt.

Abstract: A SiC single crystal manufacturing apparatus of the present invention includes a growth container having a growth space in which a SiC single crystal is grown in a first direction and a heat insulating material which covers the growth container and includes a plurality of units, and the plurality of units include a first unit and a second unit having at least a thermal conductivity different from that of the first unit, and the first unit includes a container made of at least one of graphite and a metal carbide and a filler filled into the container in a replaceable manner.

Abstract: A vapor phase growth apparatus according to an embodiment includes a reaction chamber; a substrate holder having a holding wall capable holding an outer periphery of the substrate; a process gas supply part provided above the reaction chamber, the process gas supply part having a first region supplying a first process gas and a second region around the first region supplying a second process gas having a carbon/silicon atomic ratio higher than that of the first process gas, an inner peripheral diameter of the second region being 75% or more and 130% or less of a diameter of the holding wall; a sidewall provided between the process gas supply part and the substrate holder, an inner peripheral diameter of the sidewall being 110% or more and 200% or less of an outer peripheral diameter of the second region; a first heater; a second heater; and a rotation driver.

Abstract: A silicon carbide crystal and a manufacturing method thereof are provided. The silicon carbide crystal includes an N-type seed layer, a barrier layer, and a semi-insulating ingot, which are sequentially stacked and are made of silicon carbide. The N-type seed layer has a resistivity within a range of 0.01-0.03 ?·cm. The barrier layer includes a plurality of epitaxial layers sequentially formed on the N-type seed layer by an epitaxial process. The C/Si ratios of the epitaxial layers gradually increase in a growth direction away from the N-type seed layer. A nitrogen concentration of the silicon carbide crystal gradually decreases from the N-type seed layer toward the semi-insulating ingot by a diffusion phenomenon, so that the semi-insulating crystal has a resistivity larger than 107 ?·cm.

Abstract: In various embodiments, controlled heating and/or cooling conditions are utilized during the fabrication of aluminum nitride single crystals and aluminum nitride bulk polycrystalline ceramics. Thermal treatments may also be utilized to control properties of aluminum nitride crystals after fabrication.

Abstract: It is provided a layer of a crystal of a group 13 nitride having an upper surface and lower surface and composed of a crystal of the group 13 nitride selected from gallium nitride, aluminum nitride, indium nitride or the mixed crystals thereof. In the case that the upper surface of the layer of the crystal of the group 13 nitride is observed by cathode luminescence, the upper surface includes a linear high-luminance light-emitting part and a low-luminance light-emitting region adjacent to the high-luminance light-emitting part. A half value width of reflection at (0002) plane of an X-ray rocking curve on the upper surface is 3000 seconds or less and 20 seconds or more.

Abstract: Methods and systems for low etch pit density 6 inch semi-insulating gallium arsenide wafers may include a semi-insulating gallium arsenide single crystal wafer having a diameter of 6 inches or greater without intentional dopants for reducing dislocation density, an etch pit density of less than 1000 cm?2, and a resistivity of 1×107 ?-cm or more. The wafer may have an optical absorption of less than 5 cm?1 less than 4 cm?1 or less than 3 cm?1 at 940 nm wavelength. The wafer may have a carrier mobility of 3000 cm2/V-sec or higher. The wafer may have a thickness of 500 ?m or greater. Electronic devices may be formed on a first surface of the wafer. The wafer may have a carrier concentration of 1.1×107 cm?3 or less.

Abstract: Methods and systems for low etch pit density gallium arsenide crystals with boron dopant may include a gallium arsenide single crystal wafer having boron as a dopant, an etch pit density of less than 500 cm?2, and optical absorption of 6 cm?1 or less at 940 nm. The wafer may have an etch pit density of less than 200 cm?2. The wafer may have a diameter of 6 inches or greater. The wafer may have a boron concentration between 1×1019 cm?3 and 2×1019 cm?3. The wafer may have a thickness of 300 ?m or greater. Optoelectronic devices may be formed on a first surface of the wafer, which may be diced into a plurality of die and optical signals from an optoelectronic device on one side of one of the die may be communicated out a second side of the die opposite to the one side.

Abstract: An apparatus for producing an ingot includes a crucible body having an opening and in which raw materials are accommodated, and a lid assembly located at the opening and having a portion fixed to the crucible body. The lid assembly includes a placement hole having open upper and lower ends, a frame member arranged along a periphery of the opening while surrounding a periphery of the placement hole, and a core member located in the placement hole and movable upward and downward with respect to the frame member.

Abstract: The present disclosure relates to systems and methods of analyzing cleavage profiles of nucleases.

Abstract: According to one implementation, a fiber width adjustment device includes: a feeder and an adjuster. The feeder feeds a tape material in a length direction of the tape material. The tape material consists of fibers for a fiber reinforced resin after or before the fibers are impregnated with a resin. The adjuster has a path for the tape material. The path is formed by at least a bottom and a pair of wall surfaces. The interval of the wall surfaces decreased gradually. The width of the tape material which passed the path is changed by adjusting a part of the path. The tape material passes through the part of the path while contacting with the bottom and the wall surfaces.

Abstract: The present invention relates to a method for producing an acrylonitrile-based fiber, the method including: providing a polymer solution including an acrylonitrile-based copolymer containing a carboxylic acid group; mixing 100 parts by weight of the polymer solution with 1 to 6 parts by weight of a hydrophilization solution containing an organic solvent and ammonia water in a weight ratio of 95:5 to 60:40 to prepare a spinning stock solution; and spinning the spinning stock solution. The method controls the viscosity of the spinning stock solution to improve the stretchability and strength of the acrylonitrile-based fiber, and suppresses the occurrence of gelation.

Abstract: Provided is a polyurethane elastic fiber wherein surface treating agents do not bleed even after lengthy storage, thereby preventing contamination of packing material, and which exhibits stable friction performance independent of storage duration, making the fiber suitable for a stable gathered member with low occurrence of core slip-back. This polyurethane elastic fiber is a multifilament polyurethane elastic fiber and is characterized by having, in the multifilament cross section, a void part demarcated by the constituent individual filaments being in contact with one another and by having a cross-sectional void part area ratio of 15% to 60% as calculated according to the formula (cross-sectional void part area ratio [%])=100×(area of the void part)/(total cross-sectional area), where the total cross-sectional area is the sum of the area of the void part and the cross-sectional areas of all individual filaments that constitute the multifilament.

Abstract: A bicomponent fiber comprises a core component formed from a rate-sensitive material; and a sheath component surrounding the core component, the sheath component being formed from a non-rate-sensitive polymer.

Abstract: The present invention discloses a method for preparing inverse opal photonic crystal fibers. In this method, by means of vertical deposition of colloidal spheres (micron scale or nanoscale), of polystyrene shell-core structured spheres and silica particles, the inverse opal colloidal crystal fiber stripes having a length of about 3.5 cm as well as an adjustable width and thickness is obtained. The invention provides a convenient method and achieves inverse opal photonic crystal fiber stripes with a high yield and a controllable size, and there is no crack on the surface of the fibers or inside the fibers. Furthermore, the inverse opal photonic crystal stripes of the invention can be peeled off from the surface of a glass slide and used conveniently.