Abstract: An article having a nanostructured surface and a method of making the same are described. The article can include a substrate and a nanostructured layer bonded to the substrate. The nanostructured layer can include a plurality of spaced apart nanostructured features comprising a contiguous, protrusive material and the nanostructured features can be sufficiently small that the nanostructured layer is optically transparent. A surface of the nanostructured features can be coated with a continuous hydrophobic coating. The method can include providing a substrate; depositing a film on the substrate; decomposing the film to form a decomposed film; and etching the decomposed film to form the nanostructured layer.

Abstract: A method for making carbon nanotube film includes providing a growth substrate having a first surface and a second surface opposite to the first surface. A catalyst layer is placed on the first surface. The growth substrate and the catalyst layer are placed in a reaction chamber. The carbon source gas and hydrogen are supplied into the reaction chamber at a growth temperature of a plurality of carbon nanotubes. An electric field is applied to the growth substrate, wherein an electric field direction of the electric field is from the first surface to the second surface. After the plurality of carbon nanotubes fly away from the growth substrate, the electric field is stopped applying to the growth substrate, and the carbon source gas and hydrogen are continually supplied into the reaction chamber.

Abstract: In one aspect, articles are described comprising wear resistant coatings employing one or more composite refractory layers. For example, a coated article described herein comprises a substrate and a coating deposited by CVD adhered to the substrate, the coating including a multiphase refractory layer comprising an alumina phase and a zirconia phase, wherein the zirconia phase has a texture coefficient for the (200) growth direction, TC(200), greater than 4.

Abstract: A film forming apparatus according to an embodiment includes a reaction chamber; a pump; a storage container storing a discharged liquid; a first pipe having first and second end portions, the first end portion being connected to the reaction chamber, the first pipe extending in a first direction; a second pipe between the first pipe and the pump, having third and fourth end portions, extending in a second direction different from the first direction, the fourth end portion being connected to the pump; and a third pipe between the first pipe and the storage container, having fifth and sixth end portions, extending in a third direction different from the second direction, the fifth end portion being located on an imaginary straight line extending in the first direction from a center of the second end portion and the sixth end portion being connected to the storage container.

Abstract: The invention includes apparatus and methods for instantiating and quantum printing materials, such as elemental metals, in a nanoporous carbon powder.

Abstract: An apparatus for dispensing a vapor phase reactant to a reaction chamber is disclosed. The apparatus may include: a first chamber configured for holding a source chemical with a first fill level; and a second chamber configured for holding the source chemical with a second fill level and in fluid communication with the first chamber via a fluid channel below the first and second fill levels. The apparatus may also include: a second chamber inlet opening in fluid communication with a pressurizing gas feed provided with a flow controller configured for controlling a flow of a pressurizing gas in the second chamber to control the first fill level in the first chamber. Methods for dispensing a vapor phase reactant are also provided.

Abstract: A fluid passage structure includes a housing and first wall portions. The housing includes an outer surface located at an end of a first direction and two passages separated from each other provided inside. Each of two passages includes at least one fluid chamber, openings that open to the outer surface, and branch paths that is coupled to the fluid chamber. The fluid chambers of the two passages are arranged alternately in the first direction. The branch paths include at least one of: branch paths that couple at least one of the openings with one fluid chamber; and branch paths that couple one fluid chamber with another fluid chamber. The first wall portions are provided in the housing, face the fluid chamber, and are arranged in the first direction via the fluid chamber.

Abstract: A reactor having a housing that encloses a gas delivery system operatively connected to a reaction chamber and an exhaust assembly. The gas delivery system includes a plurality of gas lines for providing at least one process gas to the reaction chamber. The gas delivery system further includes a mixer for receiving the at least one process gas. The mixer is operatively connected to a diffuser that is configured to diffuse process gases. The diffuser is attached directly to an upper surface of the reaction chamber, thereby forming a diffuser volume therebetween. The diffuser includes at least one distribution surface that is configured to provide a flow restriction to the process gases as they pass through the diffuser volume before being introduced into the reaction chamber.

Abstract: A film deposition method is provided for filling a recessed pattern formed in a surface of a substrate with a film. In the method, an adsorption blocking group is formed by adsorbing chlorine gas activated by plasma on a top surface of the substrate and an upper portion of the recessed pattern. A source gas that contains one of silicon and a metal, and chlorine, is adsorbed on a lower portion of the recessed pattern where the adsorption blocking group is not formed, by supplying the source gas to the surface of the substrate including the recessed pattern. A molecular layer of a nitride film produced by a reaction of the source gas and a nitriding gas is deposited on the lower portion of the trench by supplying the nitriding gas to the surface of the substrate including the recessed pattern.

Abstract: A chuck system for performing a substrate-biased atomic layer deposition process that forms an electrically conductive film on a substrate includes an electrically conductive substrate holder configured to support the substrate and an electrically conductive base that supports the substrate holder. An electrical isolating layer is sandwiched between the substrate holder and the base. The electrical isolating layer has an outer end and an edge recess formed in and that runs around the outer edge. The edge recess is configured to prevent the electrically conductive film from coating the entire interior of the edge recess, thereby maintaining electrical isolation between the substrate holder and the base.

Abstract: A film forming apparatus includes: a mounting table configured to place a substrate thereon and to be rotatable around an axis; a unit provided in a first region such that its bottom surface faces the mounting table and having first and second buffer spaces therein; and a flow rate controller that independently controls flow rates of a precursor gas supplied to the first and second buffer spaces. In the bottom surface, the unit includes: an inside injection section including injection ports communicated with the first buffer space and configured to inject the precursor gas supplied to the first buffer space; and an intermediate injection section including injection ports communicated with the second buffer space and configured to inject the precursor gas supplied to the second buffer space. All the first injection ports are provided at a location closer to the axis, as compared to the second injection ports.

Abstract: A vapor phase film deposition apparatus comprises a susceptor where a plurality of substrates is placed thereon; and an opposing face member disposed opposite to the susceptor. The opposing face member includes a plurality of raised portions which protrude toward the susceptor to define at least one flow channel. A reaction gas flows through the flow channel and deposits on the plurality of substrates. At least one of the plurality of raised portions includes a heat insulation structure. The vapor phase film deposition apparatus further comprising a heating element disposed on one side of the susceptor, which is opposite to the opposing face member.

Abstract: A substrate processing system may include a process chamber in which a process on a substrate is performed, a supporting unit in the process chamber to support the substrate, a gas supply unit including a gas supply part with gas supply holes, with the gas supply holes being configured to supply a process gas onto the substrate, and an exhaust unit configured to exhaust the process gas from the process chamber. The gas supply part may include a gas supply region provided with the gas supply holes and a gas diffusion region between the gas supply region and the exhaust unit. The gas diffusion region may be free of the gas supply holes.

Abstract: An arrangement comprising a component (203) adjacent to a ceramic matrix composite in a gas turbine engine is shown. The component comprises a nickel-base superalloy substrate (301) and a cobalt-modified beta-nickel-aluminide coating (302) on the substrate to prevent interdiffusion between the substrate and the ceramic matrix composite. The substrate is coated by depositing a cobalt layer on the substrate, depositing an aluminium layer on the cobalt layer and then forming a cobalt-modified beta nickel aluminide coating.

Abstract: The present disclosure relates to a coated substrate having a hard material coating, which comprises a hard carbon layer of the hydrogen-free amorphous carbon layer type, wherein the coating comprises a layer consisting of zirconium between the substrate and the hydrogen-free amorphous carbon layer; wherein between the layer consisting of zirconium and the hydrogen-free amorphous carbon layer, a layer consisting of Zr—Cx can be formed in which a zirconium monocarbide is formed; and the layer consisting of Zr—Cx and comprising zirconium monocarbide is applied directly to the adhesive layer consisting of zirconium.

Abstract: Methods and systems for electrochemically producing at least one product are disclosed. In some embodiments, the systems include a membraneless electrochemical flow-through reactor. A pair of porous electrodes configured at an angle to each other is disposed within the reactor in a channel of flowing electrolyte including a target reactant. As the electrolyte stream flows through the porous electrodes, a voltage is applied across the electrodes, resulting in the generation of a catholyte effluent stream and an anolyte effluent stream Gaseous and/or liquid products may then be separated from these streams. The membraneless electrochemical flow-through reactor is an easy to design and assemble apparatus for a variety of electrochemical processes.

Abstract: According to one embodiment, a photochemical reaction system comprises a CO2 production unit, a CO2 absorption unit, and a CO2 reduction unit. The CO2 reduction unit comprises a laminated body and an ion transfer pathway. The laminated body comprises an oxidation catalyst layer producing O2 and H+ by oxidizing H2O, a reduction catalyst layer producing carbon compounds by reducing CO2 absorbed by the CO2 absorption unit, and a semiconductor layer formed between the oxidation catalyst layer and the reduction catalyst layer and develops charge separation with light energy. The ion transfer pathways make ions move between the oxidation catalyst layer side and the reduction catalyst layer side.

Abstract: Disclosed herein are methods and systems that relate to electrochemically oxidizing metal halide with a metal ion in a lower oxidation state to a higher oxidation state; halogenating an unsaturated hydrocarbon or a saturated hydrocarbon with the metal halide with the metal ion in the higher oxidation state; and oxyhalogenating the metal halide with the metal ion from a lower oxidation state to a higher oxidation state in presence of an oxidant. In some embodiments, the oxyhalogenation is in series with the electrochemical oxidation, the electrochemical oxidation is in series with the oxyhalogenation, the oxyhalogenation is parallel to the electrochemical oxidation, and/or the oxyhalogenation is simultaneous with the halogenation.

Abstract: A novel electrochemical cell is disclosed in multiple embodiments. The instant invention relates to an electrochemical cell design. In one embodiment, the cell design can electrolyze water into pressurized hydrogen using low-cost materials. In another embodiment, the cell design can convert hydrogen and oxygen into electricity. In another embodiment, the cell design can electrolyze water into hydrogen and oxygen for storage, then later convert the stored hydrogen and oxygen back into electricity and water.

Abstract: The present disclosure relates to coatings. For example, some embodiments may include methods for producing a coating comprising: depositing a metallic matrix on a substrate by electrochemical deposition using a deposition bath including carbon comprising particles and oxide particles dispersed therein; wherein the carbon comprising particles are embedded into the metallic matrix and pores are distributed in the coating; wherein at least 80% of the pores have a pore diameter in a range from 3 to 30 ?m; wherein oxide particles are incorporated into and fixed in the pores during deposition and the oxide particles remain partially uncoated by the material of the metallic matrix.

Abstract: A method for manufacturing a palladium coated doped metal oxide conducting electrode including immersing a metal oxide conducting electrode into an aqueous solution having a palladium precursor salt to form the metal oxide conducting electrode having at least one surface coated with palladium precursor. To form a layer of palladium nanoparticles on the metal oxide conducting electrode the palladium precursor on the metal oxide conducting is reduced with a borohydride compound. The palladium nanoparticles on the metal oxide conducting electrode have an average diameter of 8 nm to 22 nm and are present on the surface of the metal oxide conducting electrode at a density from 1.5×10?3 Pd·nm?2 to 3.5×10?3 Pd·nm?2.

Abstract: A method for manufacturing a palladium coated doped metal oxide conducting electrode including immersing a metal oxide conducting electrode into an aqueous solution having a palladium precursor salt to form the metal oxide conducting electrode having at least one surface coated with palladium precursor. To form a layer of palladium nanoparticles on the metal oxide conducting electrode the palladium precursor on the metal oxide conducting is reduced with a borohydride compound. The palladium nanoparticles on the metal oxide conducting electrode have an average diameter of 8 nm to 22 nm and are present on the surface of the metal oxide conducting electrode at a density from 1.5×10?3 Pd·nm?2 to 3.5×10?3 Pd·nm?2.

Abstract: Electrocatalysts composed of single atoms dispersed over porous carbon support were prepared by a lithium-melt method. The new catalysts demonstrated high selectivity, high Faradic efficiency and low overpotential toward to the electrocatalytic reduction of carbon dioxide to fuels.

Abstract: An electrode with a conductive substrate and an electrocatalyst comprising zinc oxide and copper oxide supported on a carbon nanomaterial, a method of fabricating the electrode, an electrochemical cell that utilizes the electrode as a working electrode, and a process for producing propanol from CO2 with the electrochemical cell. Various combinations of embodiments of the electrode and the method of fabricating thereof, the electrochemical cell, and the process for producing propanol from CO2 is provided.

Abstract: A method for preparing a tightly sealed 3D lipid structure and a tightly sealed 3D lipid structure prepared thereby is disclosed. The method allows for simpler and more convenient preparation of an artificial biomembrane structure on a substrate using a lipid material, by using a plurality of transparent microwells formed on the substrate, and observation inside the microwells. In addition, a spherical 3D artificial single bilayer structure may be sealed very tightly through a simple method of changing the frequency of an electric field applied vertically to the microwells having a lipid layer formed. Through this, a biomimetic 3D structure having the structural and/or functional characteristics of a cell membrane constituting a cell can be provided more effectively.

Abstract: The present disclosure describes electrodeposited nanolaminate materials having layers comprised of nickel and/or chromium with high hardness. The uniform appearance, chemical resistance, and high hardness of the nanolaminate NiCr materials described herein render them useful for a variety of purposes including wear (abrasion) resistant barrier coatings for use both in decorative as well as demanding physical, structural and chemical environments.

Abstract: An intermediate rotogravure product has a cylindrical case onto which a circumferential copper layer extends, the circumferential copper layer having a characteristic surface roughness Rz and porosity. A copper engraving layer is on the circumferential copper layer. A method for engraving into adds a copper engraving layer, followed by engraving a predetermined pattern. A rotogravure cylinder product and method add a copper engraving layer on the circumferential copper layer that can be engraved in accordance with a predefined pattern and protected with a protection layer.

Abstract: An aluminum member comprises a base material made of aluminum or art aluminum alloy, and an anodized coating provided on a surface of the base material and having a thickness of 100 ?m or less. The anodized coating comprises a barrier layer formed on the surface of the base material and having a thickness of 10 to 150 nm, and a porous layer formed on the barrier layer and having a thickness of 6 ?m or more. The porous layer comprises a first pore extending in a thickness direction of the porous layer from a boundary between the porous layer and the barrier layer, and a second pore connected to the first pore and extending so as to branch radially in the thickness direction of the porous layer toward a surface of the porous layer.

Abstract: The present disclosure relates to an apparatus for electroplating an element. The apparatus may comprise a cathode cage assembly. The cathode cage assembly may include a cage member and at least one electrically conductive wire extending along at least a portion of the cage member. The wire may be arranged to form at least one volume within the cage member for retaining an element within the cage member. The cage member and the wire permit a degree of movement of the element during an electroplating process while retaining the element within the volume.

Abstract: A method of making a nanoporous copper is provided. A copper alloy layer and at least one active metal layer are provided. The copper alloy layer comprises a first surface and a second surface. The at least one active metal layer is located on the first surface and the second surface to form a structure. The structure is processed to form a composite structure. A process of folding and pressing the composite structure is repeated to form a precursor. The precursor is corroded to form the nanoporous copper.

Abstract: An object is to provide a method for manufacturing an aluminum plate having a plurality of through-holes in a thickness direction in which the locations of the through-holes are controlled and a manufacturing apparatus that is used in the method for manufacturing the aluminum plate. A method for manufacturing an aluminum plate of the present invention is a method for manufacturing an aluminum plate having a plurality of through-holes in a thickness direction, the method including a coating-forming step of forming a coating of an aluminum compound on a surface of an aluminum substrate having a thickness of 5 to 1,000 ?m, a partial coating removal step of removing, out of the coating, the coating present on portions in which the through-holes need to be formed, and a through-hole-forming step of forming the through-holes in the aluminum substrate by carrying out an electrochemical melting treatment on the aluminum substrate after the partial coating removal step.

Abstract: A method of forming a one-dimensional nanoarray of In2O3 nanowires on indium foil is disclosed. The nanowires of In2O3 have diameters of 30 nm-50 nm and lengths of 100 nm-200 nm, and are attached to and substantially perpendicular to the surface of the indium foil. The In2O3 nanoarray may have a nanowire density of 200-300 nanowires per ?m2 indium foil and a band gap energy of 2.63-3.63 eV. The In2O3 nanoarray may be formed by anodization of indium foil in an electrochemical cell subjected to a voltage of 15-25 V at room temperature.

Abstract: A method of forming a one-dimensional nanoarray of In2O3 nanowires on indium foil is disclosed. The nanowires of In2O3 have diameters of 30 nm-50 nm and lengths of 100 nm-200 nm, and are attached to and substantially perpendicular to the surface of the indium foil. The In2O3 nanoarray may have a nanowire density of 200-300 nanowires per ?m2 indium foil and a band gap energy of 2.63-3.63 eV. The In2O3 nanoarray may be formed by anodization of indium foil in an electrochemical cell subjected to a voltage of 15-25 V at room temperature.

Abstract: Provided is a method for manufacturing a synthetic gemstone, which manufactures a synthetic gemstone from a body tissue separated from a person or an animal, the method including: extracting a biological material from the body tissue; preparing a mixed material by mixing the biological material with a gemstone material; and growing a synthetic gemstone on a crystal seed as a single crystal by melting the mixed material.

Abstract: Single crystal semiconductor wafers comprise oxygen and an n-type dopant, and are produced by a process comprising providing a silicon melt containing n-type dopant in a quartz crucible, the melt having an initial height hM; heating the melt from the side by selectively supplying heat to an upper volume of the melt having an initial height hm, wherein hm is smaller than hM; pulling a single crystal of silicon from the melt by the CZ method with a pulling velocity V; heating the melt from above in the region of a phase boundary between the growing single crystal and the melt; heating the melt from above in the region of a surface of the melt; subjecting the melt to a magnetic field; counterdoping the melt with p-type dopant; and separating the semiconductor wafer of single-crystal silicon from the single crystal. An apparatus for accomplishing the process is also disclosed.

Abstract: The present disclosure provides an open Czochralski furnace for single crystal growth. The crystal growth apparatus may include a furnace chamber which includes a furnace body and a furnace cover. The furnace cover may be mounted on a top of the furnace body. The furnace cover may include a first through hole. The first through hole may be configured to place a temperature field. The crystal growth apparatus in the present disclosure can solve a problem that a traditional vacuum furnace needs to firstly pump a high vacuum and secondly recharge a protecting gas, thereby improving the apparatus safety; simplify the structure of the furnace body such that components that need maintenance and repair can be disassembled quickly, thereby reducing manufacturing and maintenance costs; improve the operation accuracy and stability of the apparatus; and reduce the influence of heat convection on the stability of weighing signals in the open furnace.

Abstract: A semiconductor wafer comprising single-crystal silicon has defined concentrations of oxygen, nitrogen and hydrogen; the semiconductor wafer further contains BMD seeds having a density averaged over the radius of not less than 1×105 cm?3 and not more than 1×107 cm?3; surface defects having a density averaged over the radius of not less than 1100 cm?2; and BMDs, whose density is not lower than a lower limit of 5×108/cm3. The semiconductor wafers are produced by a process which enables obtention of the required ranges of concentrations of oxygen, nitrogen, hydrogen, BMD seeds, and BMD's.

Abstract: Growth of single crystal epitaxial films of the perovskite crystal structure by liquid- or vapor-phase means can be accomplished by providing single-crystal perovskite substrate materials of improved lattice parameter match in the lattice parameter range of interest. Current substrates do not provide as good a lattice match, have inferior properties, or are of limited size and availability because cost of materials and difficulty of growth. This problem is solved by the single-crystal perovskite solid solutions described herein grown from mixtures with an indifferent melting point that occurs at a congruently melting composition at a temperature minimum in the melting curve in the pseudo-binary molar phase diagram. Accordingly, single-crystal perovskite solid solutions, structures, and devices including single-crystal perovskite solid solutions, and methods of making single-crystal perovskite solid solutions are described herein.

Abstract: A method of processing a SiC single crystal includes a measuring step of measuring a shape of an atomic arrangement plane of the SiC single crystal along at least a first direction passing through a center in plan view and a second direction orthogonal to the first direction; and a surface processing step of processing a first plane serving as an attachment plane of the SiC single crystal, in which the surface processing step includes a grinding step of grinding the first plane, and in the grinding step, a difference is given to a surface state between the first plane and a second plane facing the first plane, and the atomic arrangement plane is flattened by Twyman's effect.

Abstract: A crucible includes a wall made of a base material of tungsten or molybdenum or of a material based on tungsten or molybdenum. A barrier layer is disposed at least in sections on an outer side of the wall and/or in the wall. The barrier layer is made of a metallic material having a greater affinity for carbon and/or oxygen than the base material. A method for using a crucible for producing single-crystal sapphire or fused quartz and a method for producing a crucible for high-temperature applications are also provided.

Abstract: The present invention is directed to a monofilament, a yarn, a tape, or a staple fiber, each having 1 to 12,000 Denier per filament, a draw ratio of 2.5:1 to 25:1, and made of a polypropylene composition of a melt blended admixture of about 93% by weight of polypropylene, about 5% by weight of a polypropylene/ethylene copolymer, and about 2 wt. % of an additive. Also, a process for preparing the monofilament, yarn, tape, or staple fiber is disclosed.

Abstract: A process for producing a highly carbonaceous fibre or set of fibres including combining a structured precursor comprising a hydrocellulose fibre or a set of fibres, and an unstructured precursor, including lignin or a lignin derivative in the form of a solution having a viscosity less than 15,000 mPa·s?1 at the temperature at which the combination step takes place, in order to obtain a hydrocellulose fibre or set of fibres coated with the lignin or lignin derivative, wherein the process further includes a step of thermal and dimensional stabilization of the hydrocellulose fibre or set of fibres covered with the lignin in order to obtain a hydrocellulose fibre or set of fibres covered with a deposit of lignin or lignin derivative, and a carbonization step of the hydrocellulose fibre or set of fibres coated with a lignin deposit in order to obtain a highly carbonaceous fibre or set of fibres.

Abstract: An open-end spinning machine and control method are provided for cleaning a spinning rotor of a spinning device in which at least one cleaning measure is carried out on the spinning rotor with the aid of a pneumatic or a mechanical cleaning device. With a control unit associated with the open-end spinning machine, settings are specified for the cleaning device to carry out the cleaning measure, wherein the settings are empirically determined based on one or more operational parameters of the spinning rotor. Operational parameters are stored in a memory bank associated with the control unit. The specific settings for carrying out the cleaning measure for a particular spinning rotor are automatically determined by reference to the operational parameters stored in the memory bank that are applicable to the particular spinning rotor.

Abstract: The present invention relates to twisted yarn (P) obtained by twisting a plurality of carbon fiber resins which are slit from a carbon fiber resin tape (F2), open yarn obtained by S-twisting and Z-twisting covering yarn (C) around the periphery of the twisted yarn (P), carbon fiber covered twisted yarn obtained by winding the twisted yarn around the periphery of a core material, and methods for manufacturing thereof.

Abstract: An item may include fabric or other materials formed from intertwined strands of material. The item may include circuitry that produces signals. The strands of material may include non-conductive strands and conductive strands. The conductive strands may carry the signals produced by the circuitry. Each conductive strand may have a strand core, a conductive coating on the strand core, and an insulating layer on the conductive coating. The strand cores may be strands formed from polymer. The conductive coating may be formed from metal. Electrical connections may be made between intertwined conductive strands by selectively removing portions of the outer insulating layer to expose the conductive cores of overlapping conductive strands. A conductive material such as solder or conductive epoxy may be applied to the exposed portions of the conductive cores to electrically and mechanically connect the overlapping conductive strands.

Abstract: A fabric for a pair of jeans is disclosed. The fabric has a plurality of warp threads and a plurality of weft threads. The plurality of warp threads include a jeans warp thread, such as cotton, disposed next to an insulating warp thread, such as wool, in a repeating series. The plurality of weft threads include a plurality of jeans weft threads disposed next to one another in a repeating series. The plurality of warp threads and weft threads are perpendicularly interwoven in a twill weave defining a front side opposite a back side. From the front side of the fabric, each jeans warp thread is woven over three jeans weft threads and under one jeans weft thread in a repeating series. From the front side of the fabric, each insulating warp thread is woven under three jeans weft threads and over one jeans weft thread in a repeating series.

Abstract: In one aspect, the present disclosure is related to an upper for an article of footwear. The upper may include a knitted component with a first yarn, the first yarn forming a plurality of intermeshed loops of the knitted component. The upper may further include a surface formed by the plurality of intermeshed loops. The upper may further include a first structure at least partially forming a first aperture, the first structure extending from the surface, the first structure having a first end and a second end adjacent to the surface, and the first structure having a central portion extending from the first end to the second end. The first structure may include the first yarn.

Abstract: A knitted fabric (10) including a plurality of parallel chains of knitted loops (12), with each chain of knitted loops (12) formed from a respective yarn, and with the parallel chains of knitted loops (12) extending in the warp or vertical direction. The fabric (10) also includes a plurality of weft yarns (14), with each weft yarn (14) connected to and extending across at least two adjacent chains of knitted loops (12). Each chain of knitted loops (12) is also associated with at least one respective yarn 16, (18) that is connected to, and intertwines along the chain of knitted loops (12).

Abstract: Disclosed is an anti-weed sheet manufactured by forming webs. The web is formed of polyolefin-based staple fibers which are at least one selected from the group consisting of polyethylene staple fibers, polypropylene staple fibers, and polyisobutylene staple fibers. The sheet is bonded integrally by the needle punching by forming the webs, and the needle punching is performed in the order of pre-needle punching, low-speed needle punching, high-speed needle punching and low-speed needle punching to uniformly bridging the surface and the inside of the formed webs and improve a binding force. At least one surface of the sheet is modified by heat treatment through hot air or a heating drum.

Abstract: A polymer composition for forming spunbond fabrics offers a unique combination of simplicity and processability, while allowing fabrics formed therefrom to exhibit suitable elasticity and/or tensile strength. The polymer composition includes an propylene-based elastomer component exhibiting a particular combination of MFR and comonomer content, so as to allow for improved processability with minimal, if any, need for blending partners in the polymer composition, while still permitting fabrics formed therefrom to exhibit improved elasticity and/or tensile strength.