Abstract: The present invention relates to the technical field of manufacturing of metal materials, and in particular to a 7000-series aluminum alloy wire for additive manufacturing and a preparation method thereof. The wire was prepared by subjecting an Al—Ti—B intermediate alloy containing TiB2 particles generated in situ to severe plastic deformation to obtain an intermediate alloy containing TiB2 nanoparticles having a particle size of 50-1,000 nm or a mixture of two different particles; using the intermediate alloy containing TiB2 nanoparticles as a matrix raw material, adding other metal or intermediate alloy for smelting to obtain an alloy melt; preparing a wire blank with the alloy melt; subjecting the wire blank to hot rolling, drawing, intermediate annealing and surface treatment to obtain an Al—Zn—Mg—Cu alloy wire reinforced by particles at nano scale or submicron scale.

Abstract: An aluminum alloy in powder or wire form specifically formulated for additive manufacturing can include predominately aluminum and about 5-9% copper, about 1-5% silver, and optionally 0.1%-0.6% magnesium, and up to 0.5% of titanium and up to 0.5% of zirconium. Advantageously, the alloy does not include more than 0.15% of other elements with each other element not exceeding 0.05%.

Abstract: An austenitic alloy based on nickel and having a high chromium content, intended to be used at a given operating temperature between 900° C. and 1150° C., comprises the following elements by mass percentage: chromium between 40% and 45%; iron between 10% and 14%; carbon between 0.4% and 0.6%; titanium between 0.05% and 0.2%; niobium between 0.5% and 1.5%; at least one reactive element, selected from rare earths or hafnium, between 0.002% and 0.1%; silicon between 0% and 1%; manganese between 0% and 0.5%; nickel to balance the alloy elements. In addition, the alloy has a molar fraction of more than 0.1% of secondary carbo-nitrides rich in niobium and/or titanium, after the operating temperature has been applied thereto. The disclosure also relates to a method for designing such an alloy and to a method for validating such an alloy.

Abstract: Provided are materials that include one or more metals in solid solution with a level of nitrogen that is at a concentration higher than the a solubility limit of nitrogen in the alloy in a liquid state at atmospheric pressure. The materials may be utilized as a protective layer on a substrate, such as an Al containing substrate. Also provided are methods of forming the solid solution materials and articles employing them on a surface of a substrate.

Abstract: A ferritic alloy comprising in weight %: C: 0.01-0.1; N: 0.001-0.1; O: ?0.2; B: ?0.01; Cr: 9.0-13.0; Al: 2.5-8.0; Si: ?0.5; Mn: ?0.4; Y: ?2.2; Sc+Ce+La: ?0.2; Mo+W: ?4.0; Ti: ?1.7; Zr: ?3.3; Nb: ?3.3; V: ?1.8; Hf+Ta+Th: ?6.5; the balance being Fe and unavoidable impurities, wherein, the amounts of Ti+Zr+Nb+V+Hf+Ta+Th and C, N and O are balanced such that: at ? ? % ? ? Ti + at ? ? % ? ? Zr + at ? ? % ? ? Nb + at ? ? % ? ? V + at ? ? % ? ? Hf + at ? ? % ? ? Ta + at ? ? % ? ? Th - x * at ? ? % ? ? O - at ? ? % ? ? N at ? ? % ? ? C ? 1 wherein x is 0.5 unless the content of Y is more than or equal to 0.01 wt % then x is 0.67.

Abstract: What is provided is a novel and improved dross removal device capable of more efficiently collecting a bath surface dross using a dross robot, and a dross removal method. In order to solve the problem, according to an aspect of the present invention, there is provided a dross removal device including: a dross robot that is configured to collect a bath surface dross present on a bath surface of a coating bath; a dross sensor that is configured to measure an intensity of infrared light from the bath surface of the coating bath; a dross sensor control device that is configured to specify a position of the bath surface dross according to a temporal change amount in the intensity of the infrared light; and a dross robot control device that is configured to cause the dross robot to collect the bath surface dross at the position specified by the dross sensor control device.

Abstract: A zinc-plated steel sheet for hot stamping according to an aspect of the present invention includes a steel substrate and a plated layer provided on a surface of the steel substrate, in which the steel substrate contains, in % by mass, C: 0.10 to 0.5%, Si: 0.7 to 2.5%, Mn: 1.0 to 3%, and Al: 0.01 to 0.5%, with the balance being iron and inevitable impurities, and the steel substrate has, in the inside thereof, an internal oxide layer consists of an oxide containing at least one of Si and Mn having a thickness of 1 ?m or more, and a decarburized layer having a thickness of 20 ?m or less from an interface with the plated layer toward an internal direction of the steel substrate.

Abstract: A composite coating containing Ba2-xSrxSmTaO6 ceramic and a preparation method thereof, which belong to the field of ceramic coating materials. The composite coating layer is of a two-layer structure composed of a metal bonding layer and a ceramic layer, the metal bonding layer being directly deposited on a substrate, and the ceramic layer being deposited on the metal bonding layer; the composite coating layer has a good protective effect against high energy lasers. The method comprises: using a thermal spraying process to sequentially spray the metal bonding layer and the ceramic layer on the substrate, and enabling a Ba2-xSrxSmTaO6 powder material to be fully melted and but not decompose in the spraying process by means of adjusting parameters of an atmospheric plasma spraying process so as to successfully achieve the preparation of a Ba2-xSrxSmTaO6 ceramic layer.

Abstract: The disclosure provides a method of hardening an Fe-based alloy. The method may include cold rolling the Fe-based alloy to form a cold rolled alloy. The method may also include heating the cold rolled alloy to an elevated temperature in a nitrogen-containing gas to form a nitrided hardened Fe-based alloy. The nitrided hardened Fe-based alloy comprises N from 0.035 to 2.0 wt %.

Abstract: Disclosed are a mask strip, a mask plate frame, a mask plate, and a welding method thereof. The mask strip includes a first welding region, a second welding region, and a pattern region between the first welding region and the second welding region. In addition, a bendable region is disposed both between the first welding region and the pattern region and between the second welding region and the pattern region.

Abstract: A covering member has a hard film on the surface of a base material, wherein the hard film comprises a layer A selected from a nitride, a carbonitride, an oxynitride, and an oxycarbonitride of Cr or CrM; a metal layer which is formed on the outer surface side of the A layer and includes Cr, Ti, or W; and a layer B which is formed on the outer surface side of the metal layer and selected from a nitride, a carbonitride, an oxynitride, and an oxycarbonitride of Cr or CrM, and wherein M is one or two or more from a Group 4 metal, a Group 5 metal, a Group 6 metal of the periodic table, Al, Si, and B, and strain is introduced in the outer surface side of the metal layer.

Abstract: As described above, one or more aspects of the present disclosure provide articles having structural color, and methods of making articles having structural color.

Abstract: A linear evaporation apparatus, system and method including a conductance chamber including a linear output section configured to emit a linear source deposition flux therethrough, an evaporative vapor communication conduit including an evaporative vapor mixing chamber and a plurality of crucible-receiving apertures at distal ends from the evaporative vapor mixing chamber, wherein the evaporative vapor mixing chamber is in communication with the conductance chamber and configured to transmit the linear source deposition flux therethrough, and a plurality of crucibles, each of the plurality of crucibles corresponding to one of the plurality of crucible-receiving apertures at the distal ends from the evaporative vapor mixing chamber, each of the plurality of crucibles configured to hold a material and heat the material to a corresponding material evaporation temperature, each of the plurality of crucibles further including a vapor pressure activated lid configured to open at a predetermined material vapor press

Abstract: A stage for mounting a workpiece and an edge ring is provided, the stage including a first flow path and a second flow path along each of which a fluid flows, within the stage; a bifurcation at which an inlet port of the first flow path and an inlet port of the second flow path are coupled; a junction at which an outlet port of the first flow path and an outlet port of the second flow path are coupled; and a member provided at at least one of the bifurcation and the junction, the member having at least one opening that communicates with the first flow path and the second flow path.

Abstract: A thin film formation method according to an embodiment of the present invention includes depositing a lithium metal film on a base material in a vacuum chamber. A surface of the lithium metal film is oxidized in the vacuum chamber. The oxidized surface of the lithium metal film is carbonized in the vacuum chamber.

Abstract: A method includes arranging a substrate in a processing chamber, and exposing the substrate to a gas mixture including a first metal precursor gas and a second metal precursor gas to deposit a first metal precursor and a second metal precursor onto the substrate at the same time. The method further includes purging the processing chamber, supplying a reactant common to both the first metal precursor and the second metal precursor to form a layer of an alloy on the substrate, and purging the processing chamber.

Abstract: A gas barrier film includes a substrate, a silicon nitride layer, and a protective inorganic layer disposed on a surface side of the silicon nitride layer, which is opposite to a substrate side of the silicon nitride layer, in which the protective inorganic layer formed of silicon oxide, a thickness of the silicon nitride layer is 3 nm to 100 nm, and a ratio t2/t1 of a thickness t2 of the protective inorganic layer to the thickness t1 of the silicon nitride layer 3 to 80.

Abstract: Embodiments of the present disclosure provide apparatuses for improving gas distribution during thermal processing. In one or more embodiments, an apparatus includes a body, an angled gas source assembly, and a gas injection channel. The gas injection channel has a first half-angle and a second half-angle. The first half-angle is different from the second half-angle. The use of an improved side gas assembly in a processing chamber to direct gas from the center toward the edge of the substrate advantageously controls growth uniformity throughout the substrate. Surprisingly, directing gas through a gas channel with non-uniform half-angles will significantly increase the reaction at or near the edge of the substrate, thereby leading to an improved overall thickness uniformity of the substrate.

Abstract: There is provided a technique that includes: removing a deposit adhering to an inside of a process container by supplying a cleaning gas into the process container after performing a process of forming a film on a substrate in the process container, wherein the act of removing the deposit includes sequentially and repeatedly performing: a first process of supplying the cleaning gas into the process container until a predetermined first pressure is reached in the process container; a second process of stopping the supply of the cleaning gas and exhausting the cleaning gas and a reaction product generated by the cleaning gas remaining in the process container; and a third process of cooling an exhaust pipe that connects the process container and a vacuum pump, while maintaining a pressure inside the process container at a second pressure, which is lower than the first pressure, or lower.

Abstract: A reactor for forming fully coated particles having a solid core, the reactor comprises a reactor vessel which is configured to receive particles, and a gas phase coating mechanism that is configured to selectively introduce pulses of gas phase materials that form a coating on the particles. The reactor also includes a sieve (16) that is located within the reactor vessel, and a forcing means that is configured to force the particles through the sieve (16) in use. The sieve is configured to deagglomerate any particle aggregates formed in the reactor vessel upon forcing of the particles by the forcing means through the sieve.

Abstract: An apparatus for processing stacks is provided. A first gas source is provided. A first gas manifold is connected to the first gas source. A first processing station has a first gas outlet, wherein the first gas outlet is connected to the first gas manifold. A first variable conductance valve is between the first gas source and the first gas outlet along the first gas manifold.

Abstract: A gas introduction structure for supplying a processing gas into a vertically-elongated processing container, includes a processing gas supply pipe extending along a longitudinal direction of the processing container in the processing container and having a plurality of gas discharge holes formed along the longitudinal direction, the processing gas supply pipe configured so that the processing gas is introduced from one end toward the other end thereof, wherein a dilution gas is supplied to a portion of the processing gas supply pipe that is closer to the other end than the one end of the processing gas supply pipe.

Abstract: A method for delivering vaporized precursor in a substrate processing system using a vapor delivery system includes (a) selectively supplying push gas to an inlet of an ampoule storing liquid and vaporized precursor during a deposition period of a substrate; (b) measuring a pressure of the push gas and the vaporized precursor at an outlet of the ampoule during the deposition period; (c) determining a maximum pressure during the deposition period; (d) determining an integrated area for the deposition period based on a sampling interval and the maximum pressure during the sampling interval; and (e) repeating (a), (b), (c) and (d) for a plurality of the deposition periods for the substrate.

Abstract: A film forming method for forming a zinc oxide film on an object by ionizing oxygen, includes: setting an inflection point at which a relationship between a predetermined characteristic of the zinc oxide film and a proportion of neutral oxygen during film formation changes; determining whether to use a condition of a region where the proportion of neutral oxygen is higher than the inflection point, or to use a condition of a region where the proportion of neutral oxygen is lower than the inflection point; and performing film formation under the determined condition.

Abstract: Described herein is a technique capable of improving a film uniformity on a surface of a substrate and a film uniformity among a plurality of substrates including the substrate. According to one aspect thereof, there is provided a substrate processing apparatus including: a substrate retainer including: a product wafer support region, an upper dummy wafer support region and a lower dummy wafer support region; a process chamber in which the substrate retainer is accommodated; a first, a second and a third gas supplier; and an exhaust system. Each of the first gas and the third gas supplier includes a vertically extending nozzle with holes, wherein an upper of an uppermost hole and a lower end of a lowermost hole are arranged corresponding to an uppermost and a lowermost dummy wafer, respectively. The second gas supplier includes a nozzle with holes or a slit.

Abstract: The disclosure provides for anti-scale deposition coatings for use on surface, such as on oilfield parts. The coating includes a first, sublayer of a metal, ceramic, or metal-ceramic composite, which is characterized in having a hardness in excess of 35 HRC. The coating includes a second, top layer over the first layer, that is a polymer. A surface of the first layer may be conditioned to have a roughened or patterned topology for receipt of and adherence with the at least one top layer. The first layer may provide the coating with hardness, and the at least one top layer may provide the coating with low-friction and anti-scale properties.

Abstract: This disclosure provides a method for forming a plating film capable of suppressing deterioration of a plating solution, and a film formation device. The embodiment is a method for forming a metal plating film on a metal substrate by a substitution-type electroless plating method. The method includes bringing a porous film containing an electroless plating solution into contact with a surface of the metal substrate, and the porous film has an anionic group.

Abstract: The present invention provides a pretreatment composition for electroless plating, a pretreatment method, and an electroless plating method that exhibit high plating deposition performance without using harmful chromic acid and expensive palladium, while reducing the number of steps. The present invention provides a pretreatment composition for electroless plating that contains 10 mg/L or more of manganese ions and 10 mg/L or more of monovalent silver ions.

Abstract: Implementations provide cold spray additive manufacturing (“CSAM”) with gas recovery in situ in an open environment without requiring part disassembly and removal to a repair facility. Recapturing and reusing gas in an open environment reduces costs, rendering CSAM more commercially viable and efficient, and avoids risk of new damage to parts from contemporary pre-existing CSAM processes. A gas recovery nozzle attaches to a supersonic nozzle and sends used gas to a gas recovery sub-system by capturing gas that is deflected on impact with the part during CSAM. Captured gas is stored for reuse. A flexible coupling controls distance from the gas recovery nozzle to a part substrate to prevent (1) nozzle clogging; (2) stationary shock wave interference with gas flow; and (3) gas flow misdirection. The gas recovery nozzle also suppresses disruptive supersonic sounds. Implementations enable capture for later reuse of supersonically-propelled gas during in-situ CSAM in open environments.

Abstract: The invention relates to an antiwear-coated metal component (1), in particular for a ball valve (6), the tribosurface of which component is at least partially provided with a multi-layer antiwear coating (2). The antiwear coating (2) has at least a metal adhesion layer (3a), an adhesion-promoting layer (3b) and at least one first cover layer (3c). The adhesion-promoting layer (3b) comprises a carbide-forming metal or a boride-forming metal. The at least first cover layer (3c) comprises a hydrogen-free tetrahedral carbon. The invention further relates to a method for applying an antiwear coating (2) to a metal substrate (9) in order to produce an antiwear-coated metal component (1) of this type. The invention further relates to a ball valve, comprising an antiwear-coated metal component (1) of this type and an antiwear coating (2).

Abstract: This invention relates to a method of selection of an electrocatalyst array for a desired product outcome. The method comprises exposing an electrocatalyst system to an active agent dissolved or suspended in a conductive solution; and applying a voltage to the electrocatalyst system. The voltage sufficient to cause a multi-electron oxidation or multi-electron reduction of the active species; the electrocatalyst system comprises a counter electrode; and an electrocatalyst array. The array comprising a support substrate; uniformly sized surface structures protruding from a surface of the support substrate; the uniformly sized surface structures have edges and/or apices comprising a catalyst.

Abstract: This titanium base material has a base material body formed of titanium or a titanium alloy, in which a Magneli phase titanium oxide film formed of a Magneli phase titanium oxide represented by a chemical formula TinO2n-1 (4?n?10) is formed on a surface of the base material body. Here, the Magneli phase titanium oxide film preferably contains at least one or both of Ti4O7 and Ti5O9.

Abstract: An object of the present invention is to provide a photocatalyst for water splitting, which can form a water splitting device that is excellent in durability and responsiveness to visible light and excellent in the amount of generated gas, and a water splitting device having the photocatalyst for water splitting. A photocatalyst for water splitting according to the embodiment of the present invention is a photocatalyst for water splitting, which is used for an electrode that generates gas by irradiation with light in a state of being immersed in water, and includes a compound represented by a formula, (Ln)2CuO4. In the formula, Ln represents a lanthanoid, and a part of Ln's may be substituted with an element of Groups II to IV of the periodic table.

Abstract: The present invention provides an electrode for electrolysis in which electrolysis performance is hard to deteriorate and excellent catalytic activity is kept stable over a long period of time even when electric power in which there is a large fluctuation in output, such as renewable energy, is used as a power source. The electrode for electrolysis is an electrode 10 for electrolysis provided with an electrically conductive substrate 2 at least the surface of which contains nickel or a nickel-based alloy, an intermediate layer 4 formed on the surface of the electrically conductive substrate 2 and containing a lithium-containing nickel oxide represented by composition formula LixNi2-xO2 (0.02?x?0.5), and a catalyst layer 6 of a nickel cobalt spinel oxide, an iridium oxide, or the like, the catalyst layer 6 formed on the surface of the intermediate layer 4.

Abstract: A method of forming a cathode for hydrogen evolution reaction includes: (1) providing a substrate; (2) forming a precursor layer covering the substrate; and (3) annealing the precursor layer to form an electrocatalyst layer covering the substrate.

Abstract: The invention provides an electrolytic cell cathode with zero polar spacing, which comprises a conductive column; a cathode net connected to the conductive column; an elastic net covering the cathode net; a surface net covering the elastic net; a fastening part penetrating through the surface net, the cathode net and the elastic net and is fixed on the conductive column. According to the electrolytic cell cathode provided by the invention, in the using process, the elastic cathode is uniformly attached to the ionic membrane, so that the shaking of the ionic membrane is reduced in the using process, and the service life of the ionic membrane can be greatly prolonged. The elastic net with special structure can effectively prevent the elastic change caused by pressure fluctuation and keep the polar spacing relatively stable. In the process of discharging gas, bubbles can be broken and the resistance inside the electric tank can be reduced.

Abstract: Disclosed methods relate to producing an aluminum-scandium (Al—Sc) alloy. A method can include providing an electrolyte bath comprising a first portion of at least one of ScF3 or AlF3 and a first portion of at least one of LiF, NaF, or KF; providing a cathode in electrical contact with the electrolyte bath; providing an anode in electrical contact with the electrolyte bath; adding a first portion of SC2O3 into the electrolyte bath; reacting an aluminum ion with the cathode; applying an electric current to the cathode, thereby reacting a scandium ion with the cathode to produce the Al—Sc alloy.

Abstract: The present invention is directed to an addition polymer comprising an addition polymer backbone; at least one moiety comprising a sulfonic acid group; and at least one carbamate functional group. The present invention is also directed towards methods of making the addition polymer, aqueous resinous dispersions comprising the addition polymer, methods of coating a substrate and coated substrates.

Abstract: The disclosure provides a method comprising inducing a first current between a source of a countercharge and a first electrode, the first current being through an electrolyte. A second current is induced across the first electrode, the second current being transverse to the first current, and the second current inducing a relativistic charge across the first electrode.

Abstract: Provided is a plating diaphragm used for a plating method including disposing the plating diaphragm between an anode and a substrate that is a cathode, applying a voltage between the anode and the substrate, in a state in which a surface of the substrate is in contact with the plating diaphragm, to reduce metal ions contained in the plating diaphragm, and depositing a metal derived from the metal ions on the surface of the substrate, to form a metal film on the surface of the substrate, the plating diaphragm containing a base made of a polyolefin porous membrane, in a case in which pure water is dropped on a surface of the plating diaphragm, a contact angle ? between a droplet of the pure water and the surface of the plating diaphragm after one second has passed since landing of the droplet of the pure water on the surface is from 0° to 90°, and a tensile breaking strength is from 11 MPa to 300 MPa.

Abstract: An electroplating assembly for holding a workpiece through a thermodynamic cycle of electroplating comprises a plating rack that supports the workpiece. An electric bus bar is disposed on the plating rack. At least one connector joins the workpiece with the plating rack. At least one flexible support joins the workpiece with the plating rack.

Abstract: An electrode device is provided with a closed part facing a bottom part of a bottomed hole when inserted inside the bottomed hole, and a flow through hole linking the inside and outside of the electrode device is formed in the electrode device. When surface treatment is implemented on the inner wall surface of the bottomed hole, the hollow electrode device is inserted into the inside of the bottomed hole, the electrolytic treatment solution is made to flow through the space inside the bottomed hole, and power is applied across the electrode device and the inner wall surface of the bottomed hole. The closed part faces the bottom part of the bottomed hole as an electrode across a prescribed surface area; therefore, electroplating at the bottom part of the bottomed hole proceeds to the same extent as other sites.

Abstract: Methods for producing a single crystal silicon ingot are disclosed. The ingot is doped with boron using solid-phase boric acid as the source of boron. Boric acid may be used to counter-dope the ingot during ingot growth. Ingot puller apparatus that use a solid-phase dopant are also disclosed. The solid-phase dopant may be disposed in a receptacle that is moved closer to the surface of the melt or a vaporization unit may be used to produce a dopant gas from the solid-phase dopant.

Abstract: A method of estimating an oxygen concentration in monocrystalline silicon, which is pulled up by a pull-up device having a hot zone with a plane-asymmetric arrangement with respect to a plane defined by a crystal pull-up shaft and an application direction of a horizontal magnetic field, includes, in at least one of a neck-formation step or a shoulder-formation step for the monocrystalline silicon: a step of measuring a surface temperature of a silicon melt at a point defining a plane-asymmetric arrangement of a hot zone, and a step of estimating the oxygen concentration in a straight body of the pulled-up monocrystalline silicon based on the measured surface temperature of the silicon melt and a predetermined relationship between the surface temperature of the silicon melt and the oxygen concentration in the monocrystalline silicon.

Abstract: According to one embodiment, a crystal growth method includes forming a first member at at least a part of a bottom portion of a hole in a structure body. The hole includes the bottom portion and a side portion. The first member includes a first element. The first element is not adhered to at least a part of the side portion in the forming the first member. The crystal growth method includes growing a crystal member inside the hole by supplying a source material to the hole after the forming the first member. The source material includes a second element. The crystal member includes the second element.

Abstract: Provided is a single crystal growth crucible including a first housing and a second housing, in which a fitting portion between the first housing and the second housing has a first protruding portion, which is provided by protruding inner wall side of the first housing toward the second housing, and a second protruding portion, which is provided by protruding outer wall side of the second housing toward the first housing and covers an outer circumferential surface of the first protruding portion, the first protruding portion is formed such that an outer diameter of a tip portion thereof is larger than that of a base portion thereof in the protruding direction, and the second protruding portion is formed such that an inner diameter of a tip portion thereof is smaller than that of a base portion thereof in the protruding direction, the outer diameter of the tip portion of the first protruding portion is equal to or smaller than the inner diameter of the tip portion of the second protruding portion at room tempe

Abstract: Disclosed herein are methods and devices that use a low-thermal conductivity inert gas to shield reactant gases and thus enabling a cold wall operation within a hot wall system.

Abstract: The present invention relates to the purification of silicon. The present invention provides a method for purification of silicon. The method includes recrystallizing starting material-silicon from a molten solvent comprising aluminum to provide final recrystallized-silicon crystals. The method also includes washing the final recrystallized-silicon crystals with an aqueous acid solution to provide a final acid-washed-silicon. The method also includes directionally solidifying the final acid-washed-silicon to provide final directionally solidified-silicon crystals.

Abstract: A method of controlling a convection pattern of a silicon melt includes applying a horizontal magnetic field having an intensity of 0.2 tesla or more to the silicon melt in a rotating quartz crucible to fix a direction of a convection flow in a plane orthogonal to an application direction of the horizontal magnetic field in the silicon melt, the horizontal magnetic field being applied so that a central magnetic field line passes through a point horizontally offset from a center axis of the quartz crucible by 10 mm or more.

Abstract: The present disclosure provides instrumentation and automated methods for creating cell surface display libraries, where the cells of the library display engineered peptides on their cell surfaces for identification of antigens that bind to T-cell receptors. The engineered peptides may be putative antigens or binding regions of the T-cell receptors.