Abstract: An energy-storage device is provided. It includes a charge-storing supercapacitor cell comprised of electrodes at least one of which includes a nano-carbon component, a ion-permeable membrane and an electrolyte characterised in that the cell is embedded or encapsulated in a flexible or rigid matrix.

Abstract: An electrical connection device is connected between a main body and a draw-out device of an electrical appliance having a draw-out structure. The electrical connection device includes: a draw-out device connection assembly being fixed on the draw-out device and electrically connected to inlet and outlet ends of the draw-out device; a main body connection assembly including contact pieces with a clamping mechanism, wherein the clamping mechanism makes the contact pieces close to and clamp main body busbars; and a flexible assembly connecting the draw-out device connection assembly and the main body connection assembly to form a conductive path. The contact pieces of the main body connection assembly are offset by adapting to the position deviation of the main body busbars. A linked electrical connection assembly is formed by the described electrical connection devices and an electrical appliance using the described electrical connection devices or the electrical connection assembly.

Abstract: An operating mechanism for operating at least one contact is provided. The operating mechanism includes a base frame and an operating rod that is linearly guided in the base frame for connection with at least one contact. The operating mechanism further includes a contact spring for urging the operating rod to the open position and a rod mechanism having two links, and each link has a first end and a second end. The operating mechanism also includes a cam follower arranged at the middle hinge of the rod mechanism, a cam arranged on a cam shaft, a cam shaft lock for lacking the shaft, and a closing spring. The opening section of the cam is configured such that the cam follower follows the profile of the opening section when the operating rod moves from the closed position towards the open position.

Abstract: A push-button switch assembly with means for indicating a switch status includes: an actuation head for actuating the push-button switch assembly, the actuation head having a disc-shaped upper part and a tubular lower part; a sleeve-type push-button guide which is coupled to the actuation head such that, in relation to a longitudinal axis of the push-button switch assembly, the upper part is arranged above the push-button guide and the lower part surrounds the push-button guide; a sleeve-type locking unit for determining a switch status of the push-button switch assembly, the sleeve-type locking unit being arranged within the push-button guide in relation to the longitudinal axis and being transferrable between a first and a second locking state by the actuation head, the locking unit having a plunger sleeve and an annular detent catch coupled to the plunger sleeve, which delimit a central through-opening through the locking unit.

Abstract: A crank arm of an auxiliary rotary switch in a circuit breaker changes electrical connections of contacts in the auxiliary rotary switch when the crank-arm is rotated about its axis. An auxiliary switch actuator decouples abrupt forces from being applied to the crank arm resulting from closing main contacts of the circuit breaker. In response to the main contacts starting to close, the crank arm is set into rotation by motion of a connection-state link that is coupled to the main contacts. The rotation of the crank arm continues up to a point at which the rotation is stopped, while the connection-state link continues its motion without being connected to the crank arm. In this manner, the connection-state link is decoupled from the crank arm, to relieve the crank arm from receiving the abrupt forces conducted by the connection-state link resulting from the main circuit breaker contacts closing.

Abstract: Disclosed herein is a switching apparatus for medium voltage electric systems, said switching apparatus including one or more electric poles. For each electric pole, said switching apparatus includes: a first pole terminal, a second pole terminal, and a ground terminal; a first fixed contact member and a first movable contact member, said first fixed contact member being electrically connected to said first pole terminal and including a first fixed contact, said first movable contact member being electrically connected to said second pole terminal and including a first movable contact; a second fixed contact member and a second movable contact member, said second fixed contact member being electrically connected to said first pole terminal and including a second fixed contact, said second movable contact member including a second movable contact; a vacuum chamber, in which said second fixed contact and said second movable contact are enclosed; and a motion transmission mechanism.

Abstract: A remote-controlled mechanism according to an embodiment is used for coupling to a protective switching device to use a controllable drive device of the remote-controlled mechanism to actuate the coupled protective switching device. To this end, the remote-controlled mechanism includes: an actuating element operatively connectable to an actuating element of the coupled protective switching device and actuatable either by a remotely controllable drive device of the remote-controlled mechanism or manually; one or more sensor devices for capturing position data relating to a position of the actuating element of the remote-controlled mechanism; and a controller for evaluating the captured position data and for controlling the drive device via control commands. The controller is designed to disable the drive device upon an evaluation of the position data and/or of the control commands revealing that the actuating element of the remote-controlled mechanism has been switched off manually.

Abstract: A light modulated electron source utilizes a photon-beam source to modulate the emission current of an electron beam emitted from a silicon-based field emitter. The field emitter's cathode includes a protrusion fabricated on a silicon substrate and having an emission tip covered by a coating layer. An extractor generates an electric field that attracts free electrons toward the emission tip for emission as part of the electron beam. The photon-beam source generates a photon beam including photons having an energy greater than the bandgap of silicon, and includes optics that direct the photon beam onto the emission tip, whereby each absorbed photon creates a photo-electron that combines with the free electrons to enhance the electron beam's emission current. A controller modulates the emission current by controlling the intensity of the photon beam applied to the emission tip. A monitor measures the electron beam and provides feedback to the controller.

Abstract: Systems and methods for the batch production of large numbers of highly uniform multichannel-plate photomultiplier tubes (MCP-PMTs) for large-scale applications are provided. The systems and methods employ dual, nested low-vacuum (LV) and UHV processing in a rapid-cycling, small-footprint, scalable, batch-production facility that is capable of fabricating many MCP-PMTs simultaneously.

Abstract: Some embodiments of the present disclosure provide a method that includes colliding a laser with an electron beam to produce backscattered x-rays while the electron beam is traversing a circular arc. This backscattering process is inverse Compton scattering (ICS). ICS x-rays are emitted in the same direction as the electrons. Because this ICS direction is changing as a function of time, the position of the x-ray beam on a detector will change depending on the timing of electron/laser collision. This position change is easily detected and converted to a timing measurement sensitive at the femtosecond scale, converting a very difficult timing measurement of laser pulse, electron pulse, and x-ray pulse synchronization into a simple and robust position measurement.

Abstract: Systems and methods for reducing the buildup of charge during the investigation of samples using charged particle beams, according to the present disclosure include irradiating a first portion of a sample during a first time period, wherein the irradiating the first portion of the sample causes a gradual accumulation of net charge in the first portion of the sample, generating imaging data based on emissions resultant from irradiating the first portion of the sample, and then irradiating a second portion of a sample holder for a second time period. The methods may further includes iteratively repeating the irradiation of the first portion and the second portion during imaging of the sample region. When more than one region of interest on the sample is to be investigated, the method may also include continuing to image additional portions of the sample by iteratively irradiating a region of interest on the sample and a corresponding portion of the sample holder.

Abstract: Systems and methods are provided for charged particle detection. The detection system can comprise a signal processing circuit configured to generate a set of intensity gradients based on electron intensity data received from a plurality of electron sensing elements. The detection system can further comprise a beam spot processing module configured to determine, based on the set of intensity gradients, at least one boundary of a beam spot; and determine, based on the at least one boundary, that a first set of electron sensing elements of the plurality of electron sensing elements is within the beam spot. The beam spot processing module can further be configured to determine an intensity value of the beam spot based on the electron intensity data received from the first set of electron sensing elements and also generate an image of a wafer based on the intensity value.

Abstract: A method for processing a substrate that includes: applying, at an ionizer, a drive pulse train to an ion source to ionize a gas cluster beam and transfer the drive pulse train to the gas cluster beam; measuring, at a detector exposed to the gas cluster beam, a beam current synchronously with the drive pulse train; obtaining time-of-flight information of the clusters and the monomers in the gas cluster beam based on the beam current and the drive pulse train; determining size information relating to a size distribution of clusters and monomers in the gas cluster ion beam based on the time-of-flight information; adjusting a process parameter of the gas cluster beam based on the size information; and exposing the substrate to the gas cluster beam with the adjusted process parameter.

Abstract: A system may include a substrate stage, configured to support a substrate, where a main surface of the substrate defines a substrate plane. The system may include an ion source, including an extraction assembly that is oriented to direct an ion beam to the substrate along a trajectory defining a non-zero angle of incidence with respect to a perpendicular to the substrate plane. The system may include a radical source oriented to direct a radical beam to the substrate along a trajectory defining the non-zero angle of incidence with respect to a perpendicular to the substrate plane. The substrate stage may be further configured to scan the substrate along a first direction, lying with the substrate plane, while the main surface of the substrate is oriented within the substrate plane.

Abstract: A material recovery system for an optical component includes a reservoir containing gas and configured to supply a gas flow containing the gas. The material recovery system also includes an ion beam generator disposed on the reservoir and configured to receive the gas flow and to ionize the gas in the gas flow to generate an ion beam. The ion beam is configured to be directed to the optical component to remove at least a portion of a F-containing optical material degraded by exposure to VUV radiation, DUV radiation, and/or photo-contamination.

Abstract: Systems and methods for material processing using wafer scale waves of precisely controlled electrons in a DC plasma is presented. The anode and cathode of a DC plasma chamber are respectively connected to an adjustable DC voltage source and a DC current source. The anode potential is adjusted to shift a surface floating potential of a stage in a positive column of the DC plasma to a reference ground potential of the DC voltage/current sources. A conductive plate in a same region of the positive column opposite the stage is used to measure the surface floating potential of the stage. A control loop can be activated throughout various processing steps to maintain the surface floating potential of the stage to the reference ground potential. A signal generator referenced to the ground potential is capacitively coupled to the stage to control a surface potential at the stage for provision of kinetic energy to free electrons in the DC plasma.

Abstract: A RF generator includes a RF power source and a RF control module coupled to the RF power source. The RF control module is configured to generate at least one control signal to vary a respective at least one of an RF output signal from the RF power source or an impedance between the RF power source and a load. The RF output signal includes a RF signal modulated by a pulse signal, and the RF control module is further configured to adjust the at least one control signal to vary at least one of an amplitude or a frequency of the RF output signal or the impedance between the RF power source and the load to control a shape of the pulse signal. The at least one of the amplitude, the frequency, or the impedance is adjusted in accordance with respective feedforward adjustments that vary in accordance with a respective sensed pulse parameter detected between a matching network and the load.

Abstract: Exemplary semiconductor processing systems may include a pedestal configured to support a semiconductor substrate. The pedestal may be operable as a first plasma-generating electrode. The systems may include a lid plate defining a radial volume. The systems may include a faceplate supported with the lid plate. The faceplate may be operable as a second plasma-generating electrode. A plasma processing region may be defined between the pedestal and the faceplate within the radial volume defined by the faceplate. The faceplate may define a plurality of first apertures. The systems may include a showerhead positioned between the faceplate and the pedestal. The showerhead may define a plurality of second apertures comprising a greater number of apertures than the plurality of first apertures.

Abstract: A roll-to-roll surface cleaning treatment system may include an upper housing containing a first plasma generating device and a first transfer roller that faces a nozzle from which a plasma beam generated by the first plasma generating device is discharged and that winds and transfers a flexible substrate, the upper housing comprising a gas inlet, an entrance through which the flexible substrate is introduced, and an outlet through which the flexible substrate is discharged, and a lower housing connected to the entrance of the upper housing and containing a second plasma generating device and a second transfer roller that faces a nozzle from which a plasma beam generated by the second plasma generating device is discharged and that winds and transfers the flexible substrate, the lower housing comprising a gas outlet, and an inlet through which the flexible substrate is introduced.

Abstract: A reaction chamber includes a chamber body, an inner lining, and a lifting drive device. The inner lining is arranged in the chamber body. A wafer transfer opening is arranged at a sidewall of the chamber body. The inner lining includes a first inner lining and a second inner lining. The first inner lining is fixedly connected to the chamber body. The second inner lining is coaxially sleeved outside or inner sleeved at the first inner lining. The first inner lining and the second inner lining include a gap in a horizontal direction. The lifting drive device is configured to be connected to the second inner lining, when performing process processing on a wafer, drive the second inner lining to a predetermined first position to cause the second inner lining to cover the wafer transfer opening and the first inner lining and the second inner lining to partially overlap.

Abstract: A method of forming a plasma processing apparatus comprises providing a chamber, the chamber including a wall defining an interior, and a viewport extending through the wall. An analysis apparatus connected to the viewport may be formed. The analysis apparatus includes an analyzer adjacent to the chamber, a probe connected to the analyzer and aligned with the viewport, and a first window aligned with the probe, the first window having a first surface, and a second surface at an opposite side relative to the first surface, the second surface being exposed to the interior of the chamber, and the second surface of the first window has a scattering surface.

Abstract: A plasma processing device member according to the disclosure includes a base material and a film formed of an oxide, or fluoride, or oxyfluoride, or nitride of a rare-earth element, the film being disposed on at least part of the base material, the film including a surface to be exposed to plasma, the surface having an area occupancy of open pores of 8% by area or more, and an average diameter of open pores of 8 ?m or less.

Abstract: A plasma processing apparatus is for performing plasma processing in a depressurizable inner space. The apparatus includes a chamber having therein an inner space, a supporting table provided in the inner space and configured to support a substrate to be mounted thereon, one or more first members included in the chamber or separate from the chamber and partially exposed to a depressurized environment including the inner space, and one or more second members included in the chamber or separate from the chamber, each being in contact with a corresponding one of said one or more first members, and partially disposed in an atmospheric pressure environment. The apparatus further includes one or more feeders each of which is configured to supply a coolant to a cavity formed in a corresponding one of said one or more second members.

Abstract: Gas discharge tube having glass seal. In some embodiments, a gas discharge tube can include an insulator layer having first and second sides and defining an opening, and first and second electrodes that cover the opening on the first and second sides of the insulator layer, respectively. The gas discharge tube can further include a first glass layer implemented between the first electrode and the first side of the insulator layer, and a second glass layer implemented between the second electrode and the second side of the insulator layer, such that the first and second glass layers provide a seal for a chamber defined by the opening and the first and second electrodes.

Abstract: A reaction chamber includes an upper electrode device and a lower electrode device. The lower electrode device is disposed in the reaction chamber for carrying a workpiece to-be-processed. The upper electrode device includes a dielectric cylinder, a coil, an upper power source, an upper electrode plate, a first switch, and a second switch. The dielectric cylinder has a hollow cylindrical structure and is disposed at an upper portion of a chamber wall of the reaction chamber. The coil is arranged around the dielectric cylinder. The upper electrode plate is located above the lower electrode device. The first switch can selectively electively connect the upper power source to a first terminal of the coil or to the upper electrode plate. The second switch can selectively electrically connect a second terminal of the coil to the ground or to the upper electrode plate.

Abstract: The invention generally relates to systems including nanoelectrospray ionization emitters in a movable array format in which the emitters can be loaded, singly or simultaneously, through their narrow ends using a novel dip and go method based on capillary action, taking up sample from an array. The sample solutions in each emitter can be electrophoretically cleaned, singly or simultaneously, by creating an inductive electric field that moves interfering ions away from the narrow end of the capillary. Subsequent to cleaning, the emitters are supplied with an inductive electric field that causes electrospray into a mass spectrometer allowing mass analysis of the contents of the emitter.

Abstract: The disclosure provides a pattern collapse free wet clean process for fabricating semiconductor devices. By performing post reactive ion etching (RIE) using a fluorine-containing gas such as C2F6, followed by cleaning in a single wafer cleaner (SWC) with diluted hydrofluoric acid (HF) or in a solution of ammonia and HF, a substrate with multiple pattern collapse free high aspect ratio shallow trench isolation (STI) features can be obtained.

Abstract: A method comprises providing a substrate comprising an n-type Al/In/GaN semiconductor material. A surface of the substrate is dry-etched to form a trench therein and cause dry-etch damage to remain on the surface. The surface of the substrate is immersed in an electrolyte solution and illuminated with above bandgap light having a wavelength that generates electron-hole pairs in the n-type Al/In/GaN semiconductor material, thereby photoelectrochemically etching the surface to remove at least a portion of the dry-etch damage.

Abstract: A method of manufacturing a semiconductor device, including: providing a substrate including a first cell and a second cell, the first cell and the second cell are arranged in a first direction; forming a plurality of first metal strips arranged in a second direction and extending in the first direction on a first plane; forming a first trench over a boundary between the first cell and the second cell, a bottom surface of the first trench is located on a second plane over the first plane; filling the first trench with a non-conductive material, resulting in a separating wall extending in the first direction; and fort plurality of second metal strips extending in the second direction on a third plane over the second plane and including a first second metal strip and a second second metal strip separated by the separating wall.

Abstract: Semiconductor device structures having dielectric features and methods of forming dielectric features are described herein. In some examples, the dielectric features are formed by an ALD process followed by a varying temperature anneal process. The dielectric features can have high density, low carbon concentration, and lower k-value. The dielectric features formed according to the present disclosure has improved resistance against etching chemistry, plasma damage, and physical bombardment in subsequent processes while maintaining a lower k-value for target capacitance efficiency.

Abstract: A method for forming a semiconductor structure includes forming a hard mask layer over a target layer. The method also includes forming first mandrels over the hard mask layer. The method also includes forming a first opening in the first mandrels. The method also includes depositing a spacer layer over the hard mask layer and the first mandrels. The method also includes depositing a second mandrel material over the spacer layer. The method also includes planarizing the second mandrel material. The method also includes forming a second opening in the second mandrel material. The method also includes patterning and etching the second mandrel material to form second mandrels. The method also includes etching the spacer layer. The method also includes etching the hard mask layer and the target layer.

Abstract: A method of manufacturing a semiconductor structure includes depositing a silicon layer over a substrate, removing a portion of the silicon layer to form a gate stack, and performing a hydrogen treatment on the gate stack to repair a plurality of voids in the stack structure.

Abstract: In one exemplary aspect, the present disclosure is directed to a method for lithography patterning. The method includes providing a substrate and forming a target layer over the substrate. A patterning layer is formed by depositing a first layer having an organic composition; depositing a second layer including over 50 atomic percent of silicon; and depositing a photosensitive layer on the second layer. In some implementations, the second layer is deposited by ALD, CVD, or PVD processes.

Abstract: The method of dry-etching silicon oxide of the present disclosure includes reacting silicon oxide with any one of the following (A) to (C): (A) a gaseous hydrogen fluoride and a gaseous organic amine compound, (B) a gaseous hydrogen fluoride salt of an organic amine compound, and (C) a gaseous hydrogen fluoride, a gaseous organic amine compound, and a gaseous hydrogen fluoride salt of an organic amine compound in a non-plasma state.

Abstract: A method for the dry removal of a material on a microelectronic workpiece is described. The method includes receiving a substrate having a working surface exposing a metal layer and having at least one other material exposed or underneath the metal layer; and differentially etching the metal layer relative to the other material by exposing the substrate to a controlled gas-phase environment containing an anhydrous halogen compound.

Abstract: A method for packaging an integrated circuit chip includes the steps of: a) providing a plurality of dies and a lead frame which includes a plurality of bonding parts each having a die pad, a plurality of leads each having an end region disposed on and connected to the die pad, and a plurality of bumps each disposed on the end region of a respective one of the leads; b) transferring each of the dies to the die pad of a respective one of the bonding parts to permit each of the dies to be flipped on the respective bonding part; and c) hot pressing each of the dies and the die pad of a respective one of the bonding parts to permit each of the dies to be bonded to the bumps of the respective bonding part.

Abstract: A method for fabricating a semiconductor package, the method including: forming a release layer on a first carrier substrate, wherein the release layer includes a first portion and a second portion, wherein the first portion has a first thickness, and the second portion has a second thickness thicker than the first thickness; forming a barrier layer on the release layer; forming a redistribution layer on the barrier layer, wherein the redistribution layer includes wirings and an insulating layer; mounting a semiconductor chip on the redistribution layer; forming a molding layer on the redistribution layer to at least partially surround the semiconductor chip; attaching a second carrier substrate onto the molding layer; removing the first carrier substrate and the release layer; removing the barrier layer; and attaching a solder ball onto the redistribution layer exposed by removal of the barrier layer and the second portion of the release layer.

Abstract: A method includes forming a plurality of first conductive vias over a redistribution layer (RDL); disposing a first die over the RDL and adjacent to the first vias; and forming a plurality of second conductive vias over and electrically connected to the first conductive vias, each of the second conductive vias corresponding to one of the first conductive vias. The method further includes forming a plurality of third conductive vias over the first die; disposing a second die over the first die and adjacent to the third conductive vias; and encapsulating the first die, the second die, the first conductive vias, the second conductive vias and the third conductive vias with a molding material.

Abstract: A method includes forming a first electrically conductive layer on a first side of a dielectric insulation layer, forming a structured mask layer on a side of the first electrically conductive layer that faces away from the dielectric insulation layer, forming at least one trench in the first electrically conductive layer, said at least one trench extending through the entire first electrically conductive layer to the dielectric insulation layer, forming a coating which covers at least the bottom and the side walls of the at least one trench, and removing the mask layer after the coating has been formed.

Abstract: A substrate processing apparatus performs a drying process for drying a substrate with a liquid film formed on a pattern formation surface thereof, using a processing fluid in a supercritical state. The substrate processing apparatus includes a processing container, a holder, and a processing liquid supply. The processing container accommodates the substrate. The holder holds the substrate inside the processing container. The processing liquid supply supplies a processing fluid into the processing container. Further, the holder includes a base, a plurality of support members, and a lifting mechanism. The base is disposed below the substrate. The plurality of support members are provided on the base, and support the substrate from below. The lifting mechanism moves the plurality of support members up and down.

Abstract: A processing fluid flows into a processing space SP by way of a flow passage and discharge openings 174, 178 having substantially the same cross-sectional shape as that of a gap space formed in a clearance between a wall surface of the processing space SP and a substrate holder 15. On the other hand, the processing fluid having passed through the processing space SP is discharged to an outside via discharge flow passages 183, 187 after flowing into the buffer space 182, 186 having substantially the same width as the gap space. From these, the processing fluid can be caused to flow into the buffer space 182, 186 while the laminar flow state is maintained in the gap space. Thus, the generation of a turbulence in the processing space SP can be suppressed.

Abstract: A substrate processing apparatus includes a nozzle unit. The nozzle unit includes a line and a nozzle tip provided on a tip end of the line. The line includes a first layer, a second layer and a third layer. The nozzle tip is formed of a corrosion resistant resin having conductivity. The third layer is configured to cover the first layer and the second layer from outside and cover a part of the nozzle tip from outside.

Abstract: A substrate treatment apparatus includes a substrate support unit, a chemical supply unit supplying a chemical solution onto an upper surface of a substrate supported on the substrate support unit, a laser irradiation unit applying a laser pulse to the substrate to heat the substrate, and a controller controlling the laser irradiation unit to emit the laser pulse such that the substrate is repeatedly heated and cooled to maintain a preset temperature.

Abstract: A member for a semiconductor manufacturing apparatus includes a ceramic plate having an upper surface serving as a wafer mounting surface and incorporating an electrode, a ceramic dense plug disposed adjacent to a lower surface side of the ceramic plate and ceramic-bonded to the ceramic plate by a ring-shaped joint portion, a metal cooling plate joined to the lower surface of the ceramic plate in a portion other than the ring-shaped joint portion, and a gas flow channel. The gas flow channel includes a gas discharge hole that passes completely through the ceramic plate in the thickness direction of the ceramic plate and an internal gas flow channel that passes from the upper surface to the lower surface of the dense plug while winding through the dense plug. The gas flow channel passes inside of an inner periphery of the joint portion.

Abstract: A substrate processing apparatus includes a process chamber, a support part, disposed in the process chamber, having a substrate loading region in which a substrate is seated, a heating part disposed in a location opposing the substrate loading region to heat the substrate loading region, and a reflective member, disposed in a location opposing the substrate loading region in the process chamber, in which a sealed hollow portion is disposed.

Abstract: A temperature adjusting device includes a first member and a flow path. The first member has thereon a first surface as a temperature control target. The flow path is formed within the first member along the first surface. A first end of the flow path serves as an inlet opening through which a heat transfer medium is introduced and a second end of the flow path serves as an outlet opening through which the heat transfer medium is discharged. The flow path is formed such that a thermal resistance between the first surface and the flow path increases as the flow path goes from the outlet opening toward the inlet opening.

Abstract: A flexure-based continuous ejector pin mechanism for Mini/Micro chip mass transfer includes a first drive frame, a second drive frame, a mounting base, a first thorn die attach drive device, a second thorn die attach drive device, first flexible hinges, second flexible hinges, and a pricking pin. The second drive frame and the first drive frame are connected through the first flexible hinge. The mounting base is connected to a left side and a right side of the second drive frame through the second flexible hinges. Compared with a laser transfer technology, the flexible movable thorn die attach device has lower cost and higher accuracy; compared with a vacuum nozzle transfer technology, the flexible movable thorn die attach device has higher transfer efficiency and quality; and compared with a conventional thorn die attach device, the flexible movable thorn die attach device has higher transfer efficiency and precision.

Abstract: In accordance with some embodiments, a method for processing semiconductor wafer is provided. The method includes connecting a drum which stores the chemical liquid with a testing pipe. The method also includes guiding the chemical liquid in the drum into the testing pipe. In addition, the method includes detecting a condition of the chemical liquid in the testing pipe. The method further includes determining if the condition of the chemical liquid is acceptable. When the condition of the chemical liquid is acceptable, supplying the chemical liquid to a processing tool at which the semiconductor wafer is processed.

Abstract: A substrate misalignment detection method includes: acquiring first image information or first position information of a substrate held to a stage by suction at a first height position; delivering the substrate from the stage to a holder in a state in which the suction of the substrate is released and causing the holder to hold the substrate at the first height position; acquiring second image information or second position information of the substrate held at the first height position; and detecting misalignment of the substrate by comparing the first image information with the second image information or by comparing the first position information with the second position information.

Abstract: Proposed is an EFEM configured to perform wafer transfer between a wafer storage device and process equipment. More particularly, proposed is an EFEM that prevents harmful gases inside a transfer chamber in which wafer transfer is performed from escaping out of the EFEM.