Patents Issued in September 14, 2023
  • Publication number: 20230292599
    Abstract: The present application provides a heterocyclic compound capable of significantly enhancing lifetime, efficiency, electrochemical stability and thermal stability of an organic light emitting device, an organic light emitting device comprising the heterocyclic compound in an organic material layer, and a composition for an organic material layer.
    Type: Application
    Filed: August 11, 2021
    Publication date: September 14, 2023
    Applicant: LT MATERIALS CO.,LTD.
    Inventors: Sol LEE, Jun-Tae MO, Ji-Yoon BYUN, Dong-Jun KIM
  • Publication number: 20230292600
    Abstract: A compound for an organic optoelectronic device, a composition for an organic optoelectronic device, an organic optoelectronic device including the same, and a display device, the compound being represented by Chemical Formula 1:
    Type: Application
    Filed: August 30, 2022
    Publication date: September 14, 2023
    Inventors: Changwoo KIM, Seungjae LEE, Chang Ju SHIN, Jongwoo WON, Youngkyoung JO, Hyung Sun KIM, Hyungyu LEE, Sung-Hyun JUNG
  • Publication number: 20230292601
    Abstract: The present application provides a heterocyclic compound, an organic light emitting device including the heterocyclic compound in an organic material layer, and a composition for an organic material layer.
    Type: Application
    Filed: July 30, 2021
    Publication date: September 14, 2023
    Applicant: LT MATERIALS CO., LTD.
    Inventors: Jun-Tae MO, Ji-Young KIM, Young-Jin LEE, Dong-Jun KIM
  • Publication number: 20230292605
    Abstract: Provided are OLEDs whose EML has a figure of merit (FOM) value of equal to or larger than 2.50 that have enhanced efficiency and lifetimes. FOM can be determined according to the methods disclosed herein.
    Type: Application
    Filed: March 2, 2023
    Publication date: September 14, 2023
    Applicant: UNIVERSAL DISPLAY CORPORATION
    Inventors: Fadi M. JRADI, Nicholas J. THOMPSON, Tyler FLEETHAM
  • Publication number: 20230292606
    Abstract: Disclosed is an organic light emitting device having an anode; a hole transporting layer; an emissive region; an electron transporting layer; and a cathode. In such devices, the emissive region includes a first compound, H1; a second compound, H2; and a third compound, D1. The first compound H1 is a first host that includes a hole transporting moiety, HT1, and an electron transporting moiety, ET1; the second compound H2 is a second host that includes an electron transporting moiety, ET2; and the third compound D1 is an emitter.
    Type: Application
    Filed: March 2, 2023
    Publication date: September 14, 2023
    Applicant: UNIVERSAL DISPLAY CORPORATION
    Inventors: Tyler FLEETHAM, Nicholas J. THOMPSON, Alfiya SULEYMANOVA, Jerald FELDMAN
  • Publication number: 20230292607
    Abstract: A condensed cyclic compound represented by Formula 1 and including 9 to 60 aromatic rings: wherein A, L, and n are the same as described in the specification.
    Type: Application
    Filed: May 19, 2023
    Publication date: September 14, 2023
    Inventor: Mitsunori ITO
  • Publication number: 20230292608
    Abstract: Indolocarbazole materials with substitution attached at specific positions and methods to synthesize the same are disclosed. The materials are used as hosts for improving performance of organic electroluminescence devices.
    Type: Application
    Filed: May 22, 2023
    Publication date: September 14, 2023
    Inventors: Zhiqiang Ji, Lichang Zeng, Alexey Borisovich Dyatkin, Chuanjun Xia
  • Publication number: 20230292609
    Abstract: Provided is an organic light emitting device comprising: a first electrode; a second electrode; one or more organic material layers including a light emitting layer provided between the first electrode and the second electrode, wherein the light emitting layer includes a compound of Chemical Formula 1 and a compound of Chemical Formula 2:
    Type: Application
    Filed: August 31, 2021
    Publication date: September 14, 2023
    Inventors: Hoon Jun KIM, Jae Seung HA, Ji Young CHOI, Woochul LEE, Joo Ho KIM
  • Publication number: 20230292610
    Abstract: The present disclosure relates to an organic electroluminescent compound, a plurality of host materials comprising at least one first host compound and at least one second host compound, and an organic electroluminescent device comprising the same. An organic electroluminescent device with improved driving voltage, luminous efficiency and/or lifespan properties can be provided by comprising the organic electroluminescent compound or the specific combination of compounds according to the present disclosure as a host material.
    Type: Application
    Filed: March 6, 2023
    Publication date: September 14, 2023
    Inventors: Sang-Hee CHO, Young-Jae KIM, Hyo-Nim SHIN, So-Young JUNG, Mi-Ja LEE, Su-Hyun LEE, Hae-Yeon KIM
  • Publication number: 20230292611
    Abstract: The present disclosure relates to an organic electroluminescent compound, a plurality of host materials, and an organic electroluminescent device comprising the same. By comprising the organic electroluminescent compound and/or the plurality of host materials according to the present disclosure, an organic electroluminescent device having low driving voltage and/or high luminous efficiency and/or long lifespan characteristics can be provided.
    Type: Application
    Filed: March 13, 2023
    Publication date: September 14, 2023
    Inventors: So-Young JUNG, Su-Hyun LEE, Sang-Hee CHO, Ji-Song JUN, Jin-Ri HONG, Mi-Ja LEE
  • Publication number: 20230292612
    Abstract: Provide are a compound capable of improving the light-emitting efficiency, stability, and lifespan of an element, an organic electronic element using same, and an electronic device thereof.
    Type: Application
    Filed: May 16, 2023
    Publication date: September 14, 2023
    Applicant: DUK SAN NEOLUX CO., LTD.
    Inventors: Hyun Ju SONG, Jae Ho KIM, Junggeun LEE, Ki Hwan YOON
  • Publication number: 20230292613
    Abstract: A light-emitting element which has low driving voltage and high emission efficiency is provided. The light-emitting element includes, between a pair of electrodes, a hole-transport layer and a light-emitting layer over the hole-transport layer. The light-emitting layer contains a first organic compound having an electron-transport property, a second organic compound having a hole-transport property, and a light-emitting third organic compound converting triplet excitation energy into light emission. A combination of the first organic compound and the second organic compound forms an exciplex. The hole-transport layer contains at least a fourth organic compound whose HOMO level is lower than or equal to that of the second organic compound and a fifth organic compound whose HOMO level is higher than that of the second organic compound.
    Type: Application
    Filed: May 18, 2023
    Publication date: September 14, 2023
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hiromi SEO, Satoshi SEO, Satoko SHITAGAKI
  • Publication number: 20230292614
    Abstract: A photoelectric conversion element of the present disclosure includes a first electrode, a second electrode disposed to be opposed to the first electrode, and an organic photoelectric conversion layer provided between the first electrode and the second electrode and including at least one of a Chryseno[1,2-b:8,7-b?]dithiophene (ChDT1) derivative represented by the general formula (1) or a Chryseno[1,2-b:7,8-b?]dithiophene (ChDT2) derivative represented by the general formula (2).
    Type: Application
    Filed: May 17, 2023
    Publication date: September 14, 2023
    Inventors: YUKI NEGISHI, OSAMU ENOKI, YUTA HASEGAWA
  • Publication number: 20230292615
    Abstract: The invention pertains to an organic molecule for use in optoelectronic devices. The organic molecule has a structure of Formula I: Formula I wherein RA is a moiety represented by one of Formulas II, III, or IV: which is bonded to the structure of Formula I via the position marked by the dotted line; Q is at each occurrence independently selected from the group consisting of N and CR3; and Z is at each occurrence independently from one another selected from the group consisting of a direct bond, CR4R5, C?CR4R5, C?O, C?NR4, NR4, O, SiR4R5, S, S(O) and S(O)2.
    Type: Application
    Filed: July 22, 2021
    Publication date: September 14, 2023
    Inventors: Daniel ZINK, Damien THIRION, Stefan SEIFERMANN, Sebastian DÜCK, Ramin PASHAZADEH
  • Publication number: 20230292616
    Abstract: The present invention introduces a new hybrid thermal energy harvesting device that combines electrochemistry and semiconductors to achieve simultaneous high saturation thermo-voltage and high current density. This innovation demonstrates the synergistic effect of integrating semiconductors, commonly used in solid-state thermoelectrics for high current density, with ion-conducting polymer electrolytes, known for their high thermo-voltage. The device ensures constant high-power output from continuous or periodic heat sources. It directly converts heat into electricity for immediate use or stores electricity derived from low-grade temperature differentials and temperature ranges for later discharge. It exhibits characteristics resembling both photovoltaics and capacitors simultaneously.
    Type: Application
    Filed: May 19, 2023
    Publication date: September 14, 2023
    Inventor: Yu-Che CHANG
  • Publication number: 20230292617
    Abstract: The present invention provides a surface tension assisted film forming method to prepare a flexible, patterned piezoceramic composite for use in a variety of electronics. The present method allows tuning mechanical and piezoelectric properties of the resulting composite by simply adjusting one or few parameters used during the piezoceramic film forming and/or composite forming procedures in the absence of any complex transferring techniques that are commonly used in conventional methods. The present invention also allows customizing patterns (two-dimensional or three-dimensional) on the piezoceramic framework to result in a piezoelectric composite that is able to provide anisotropic piezoelectric responses to different loads whilst still having a constant electrical output over a long-time deformation.
    Type: Application
    Filed: March 8, 2022
    Publication date: September 14, 2023
    Inventors: Zhengbao YANG, Ying HONG
  • Publication number: 20230292618
    Abstract: A design process is used for designing a device comprising a plurality of micro-machined elements, each comprising a flexible membrane, the elements being arranged in a plane in a determined topology. The design process comprises a step of defining the determined topology so that it has a character compatible with a generic substrate having cavities, the characteristics of which are pre-established. Each flexible membrane of the micro-machined elements is associated with one cavity of the generic substrate. The present disclosure also relates to a fabrication process for fabricating a device comprising a plurality of micro-machined elements, and to this device itself, wherein only some of the pairs of cavities and flexible membranes are configured to form a set of functional micro-machined elements.
    Type: Application
    Filed: May 23, 2023
    Publication date: September 14, 2023
    Inventor: Bruno Ghyselen
  • Publication number: 20230292619
    Abstract: The present invention relates to a body (2); at least one actuator (3) made of an electro-active polymer material, which changes form depending on the electrical energy so that it triggers the body (2); at least two reinforcers (4) which allow the actuator (3) to change form, are positioned on the actuator (3) such that they remain opposite to each other, and are connected to the actuator (3) by clamping, thus transmitting movement to the body (2).
    Type: Application
    Filed: April 26, 2021
    Publication date: September 14, 2023
    Inventor: Fahri Bugra CAMLICA
  • Publication number: 20230292620
    Abstract: method of fabricating a sensor including a polymer body and a strain gauge including at least one Schottky junction. The Schottky junction includes an active layer including a piezoelectric semiconductor material, preferably with a wurtzite crystalline structure. The Schottky junction further including at least one metal electrode electrically connected to the active layer. The method including the following steps: forming a polymer layer, growing the at least one metal electrode on the polymer layer, then growing the active layer by atomic layer deposition, ALD, on the polymer layer and on the metal electrode. A sensor includes a polymer body and a cantilever including a strain gauge obtained by ALD. A gauge factor of 150 is achieved at different frequencies.
    Type: Application
    Filed: July 29, 2021
    Publication date: September 14, 2023
    Inventors: Jérôme Polesel, Stephanie Girod, Raoul Joly, Patrick Grysan
  • Publication number: 20230292621
    Abstract: A piezoelectric thin film element contains an electrode layer (first electrode layer) and a piezoelectric thin film directly or indirectly stacked on the electrode layer. The piezoelectric thin film contains a tetragonal crystal 1 of a perovskite-type oxide and a tetragonal crystal 2 of a perovskite-type oxide. A (001) plane of the tetragonal crystal 1 is oriented in a normal direction of a surface of the electrode layer. A (001) plane of the tetragonal crystal 2 is inclined with respect to the (001) plane of the tetragonal crystal 1. A spacing of (001) planes of the tetragonal crystal 1 is c1. A spacing of (100) planes of the tetragonal crystal 1 is a1. A spacing of (001) planes of the tetragonal crystal 2 is c2. A spacing of (100) planes of the tetragonal crystal 2 is a2. c1/a1 is larger than c2/a2.
    Type: Application
    Filed: August 25, 2022
    Publication date: September 14, 2023
    Applicant: TDK Corporation
    Inventor: Junpei MORISHITA
  • Publication number: 20230292622
    Abstract: A metamaterial-based substrate (meta-substrate) for piezoelectric energy harvesters. The design of the meta-substrate combines kirigami and auxetic topologies to create a high-performance platform including preferable mechanical properties of both metamaterial morphable structures. The creative design of the meta-substrate can improve strain-induced vibration applications in structural health monitoring, internet-of-things systems, micro-electromechanical systems, wireless sensor networks, vibration energy harvesters, and other applications whose efficiency is dependent on their deformation performance. The meta-substrate energy harvesting device includes a meta-material substrate comprising an auxetic frame having two kirigami cuts and a piezoelectric element adhered to the auxetic frame by means of a thin layer of elastic glue.
    Type: Application
    Filed: May 16, 2023
    Publication date: September 14, 2023
    Applicant: The Boeing Company
    Inventors: Saman Farhangdoust, Gary E. Georgeson, Jeong-Beom Ihn
  • Publication number: 20230292623
    Abstract: A magnetoresistance effect element with a small element size can be provided which achieves both an increase in a thermal stability factor ? and a reduction in a writing current IC0 and which improves a performance index ?/IC0(?A?1) obtained by dividing the thermal stability factor ? by the writing current IC0. The magnetoresistance effect element includes a first reference layer (B1), a first junction layer (11), a first magnetic layer (21), a first non-magnetic coupling layer (31), a second magnetic layer (22), and a second junction layer (12), and a film thickness of the first non-magnetic coupling layer (31) is 0.1 nm or more and 0.3 nm or less.
    Type: Application
    Filed: June 21, 2019
    Publication date: September 14, 2023
    Inventors: Sadahiko MIURA, Hiroaki HONJO, Hideo SATO, Shoji IKEDA, Tetsuo ENDOH
  • Publication number: 20230292624
    Abstract: A magnetic sensor including a plurality of magnetoresistive elements; each magnetoresistive element including a ferromagnetic layer having a magnetization that is orientable at or above a threshold temperature; the magnetic sensor further includes a plasmonic structure destined to be irradiated by electromagnetic radiation and including a spatially periodic plasmonic array of metallic structures. The period of the plasmonic array and the lateral dimension of the metallic structures are adjusted to obtain plasmon resonance of the plasmonic structure for a given wavelength of the electromagnetic radiation. The plasmonic array is arranged in the magnetic sensor such as to heat the first ferromagnetic layer at or above the threshold temperature, from the enhanced absorption of the electromagnetic radiation by plasmon resonance. The present disclosure further concerns a system including the sensor and an emitting device configured to emit electromagnetic radiation.
    Type: Application
    Filed: May 27, 2021
    Publication date: September 14, 2023
    Inventors: Andrey Timopheev, Nikita Strelkov, Jeffrey Childress
  • Publication number: 20230292625
    Abstract: This magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer. At least one of the first ferromagnetic layer and the second ferromagnetic layer has an alloy obtained by adding an additive element to a Heusler alloy. The additive element is any one or more elements selected from the group consisting of H, He, N, O, F, Ne, P, Cl, Ar, Kr, and Xe.
    Type: Application
    Filed: December 21, 2020
    Publication date: September 14, 2023
    Applicant: TDK CORPORATION
    Inventors: Katsuyuki NAKADA, Kazuumi INUBUSHI, Shinto ICHIKAWA
  • Publication number: 20230292626
    Abstract: A magnetic field sensor having a semiconductor chip is proposed, the semiconductor chip having at least one magnetic field sensor element, the semiconductor chip being embedded in a semiconductor chip encapsulation, having a permanent magnet, the permanent magnet being embedded in a magnet encapsulation, wherein an interface between the semiconductor chip encapsulation and the magnet encapsulation extends as far as a free surface of the magnetic field sensor. Methods for producing a magnetic field sensor are furthermore disclosed.
    Type: Application
    Filed: March 7, 2023
    Publication date: September 14, 2023
    Inventors: Rainer Markus SCHALLER, Jochen DANGELMAIER, Klaus ELIAN
  • Publication number: 20230292627
    Abstract: A semiconductor device includes a substrate, a first dielectric layer, a second dielectric layer, and a third dielectric layer. The first dielectric layer is disposed on the substrate, around a first metal interconnection. The second dielectric layer is disposed on the first dielectric layer, around a via and a second metal interconnection. The second metal interconnection directly contacts the first metal interconnection. The third dielectric layer is disposed on the second dielectric layer, around a first magnetic tunneling junction (MTJ) structure and a third metal interconnection. The third metal interconnection directly contacts top surfaces of the first MTJ structure and the second metal interconnection, and the first MTJ structure directly contacts the via.
    Type: Application
    Filed: May 23, 2023
    Publication date: September 14, 2023
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Po-Kai Hsu, Ju-Chun Fan, Yi-Yu Lin, Ching-Hua Hsu, Hung-Yueh Chen
  • Publication number: 20230292628
    Abstract: A method of forming a memory device includes forming vertical stacks each including a respective first electrically conductive line and a respective selector rail over a substrate, such that the vertical stacks laterally extend along a first horizontal direction and are laterally spaced apart from each other along a second horizontal direction, forming magnetic tunnel junction material layers over the vertical stacks, and patterning the magnetic tunnel junction material layers and an upper portion of each of the selector rails to form a two-dimensional array of magnetic tunnel junctions and periodic notches at least in an upper portion of each of the selector rails.
    Type: Application
    Filed: March 14, 2022
    Publication date: September 14, 2023
    Inventors: Jordan KATINE, Lei WAN
  • Publication number: 20230292629
    Abstract: A method for forming a semiconductor memory structure includes forming an MTJ stack over a substrate. The method also includes etching the MTJ stack to form an MTJ device. The method also includes depositing a metal layer over a top surface and sidewalls of the MTJ device. The method also includes oxidizing the metal layer to form an oxidized metal layer. The method also includes depositing a cap layer over the oxidized metal layer. The method also includes oxidizing the cap layer to form an oxidized cap layer. The method also includes removing an un-oxidized portion of the cap layer.
    Type: Application
    Filed: March 9, 2022
    Publication date: September 14, 2023
    Inventors: Tzu-Ting LIU, Yu-Jen WANG, Chih-Pin CHIU, Hung-Chao KAO, Chih-Chuan SU, Liang-Wei WANG, Chen-Chiu HUANG, Dian-Hau CHEN
  • Publication number: 20230292630
    Abstract: A magnetic memory device includes a loop-type magnetic track having a first part and a second part that are arranged in a counterclockwise direction, a first conductive line on a top surface of the first part, and a second conductive line on a bottom surface of the second part. The magnetic track includes a lower magnetic layer, a spacer layer, and an upper magnetic layer that are sequentially stacked. Each of the first and second conductive lines includes heavy metal. Each of the first and second conductive lines is configured to generate spin-orbit torque caused by current that flows therein. The spin-orbit torque causes magnetic domains in the magnetic track to move in a clockwise direction or in the counterclockwise direction.
    Type: Application
    Filed: October 14, 2022
    Publication date: September 14, 2023
    Inventors: Siyeon CHO, Taeyoung KIM, Hyunmog PARK, Bongyong LEE, Yukio HAYAKAWA
  • Publication number: 20230292631
    Abstract: Semiconductor device includes pair of active devices, composite spin Hall electrode, and a magnetic tunnel junction. Composite spin Hall electrode is electrically connected to pair of active devices. Magnetic tunnel junction is disposed on opposite side of composite spin hall electrode with respect to pair of active devices. Spin Hall electrode includes pair of heavy metal layers, and spacer layer disposed in between pair of heavy metal layers. Pair of heavy metal layers is made of a heavy metal in a metastable state. Spacer layer comprises first material different from the pair of heavy metal layers.
    Type: Application
    Filed: April 28, 2023
    Publication date: September 14, 2023
    Inventors: Chien-Min Lee, Shy-Jay Lin, Yen-Lin Huang, MingYuan Song, Tung Ying Lee
  • Publication number: 20230292632
    Abstract: Josephson junctions are the main circuit element of superconducting quantum information devices due to their nonlinear inductance properties and fabrication scalability. However, large scale integration necessarily depends on high fidelity and high yielding fabrication of Josephson junctions. The standard Josephson junction technique depends on a submicron suspended resist Dolan bridge that tends to be very fragile and fractures during the fabrication process. The present invention is directed to a new tunnel junction resist mask that incorporates stress-relief channels to reduce the intrinsic stress of the resist, thereby increasing the survivability of the Dolan bridge during device processing, resulting in higher Josephson junction yield.
    Type: Application
    Filed: March 9, 2023
    Publication date: September 14, 2023
    Inventors: Charles Thomas Harris, Sueli Del Carmen Skinner Ramos, William F. Kindel, Rupert M. Lewis, Matt Eichenfield
  • Publication number: 20230292633
    Abstract: A quantum processing element is disclosed. The element includes a semiconductor substrate, a dielectric material forming an interface with the semiconductor substrate, and a donor molecule embedded in the semiconductor. The donor molecule includes a plurality of dopant dots embedded in the semiconductor, each dopant dot includes one or more dopant atoms, and one or more electrons/holes confined to the dopant dots. A distance between the dopant dots is between 3 and 9 nanometres.
    Type: Application
    Filed: March 13, 2023
    Publication date: September 14, 2023
    Applicant: Silicon Quantum Computing Pty Limited
    Inventors: Ludwik Kranz, Michelle Yvonne Simmons, Rajib Rahman
  • Publication number: 20230292634
    Abstract: A charging and field supplement circuit for superconducting magnets based on a pulsed current includes a capacitor charging circuit, an energy-storage capacitor, a capacitor discharging circuit, a superconducting magnetic energy storage circuit, and a superconducting persistent-current switch. Two output ends of the capacitor charging circuit are respectively connected to two ends of the energy-storage capacitor. Two input ends of the capacitor discharging circuit are respectively connected to the two ends of the energy-storage capacitor. Two output ends of the capacitor discharging circuit are respectively connected to two input ends of the superconducting magnetic energy storage circuit. Two output ends of the superconducting magnetic energy storage circuit are respectively connected to two input ends of the superconducting persistent-current switch. Two output ends of the superconducting persistent-current switch are configured to charge and magnetize a target superconducting magnet.
    Type: Application
    Filed: March 3, 2023
    Publication date: September 14, 2023
    Inventors: Xiaofen LI, Zhiwei ZHANG, Zhijian JIN, Yanbo BI
  • Publication number: 20230292635
    Abstract: The present disclosure relates to resistive random-access memory (RRAM) devices. A method for fabricating an RRAM device includes: fabricating a first bottom electrode and a second bottom electrode on a substrate; fabricating a first isolation layer on the substrate, the first bottom electrode, and the second bottom electrode; fabricating a via in the first isolation layer to expose a portion of the first bottom electrode; fabricating a switching oxide layer on the first isolation layer and the exposed portion of the first bottom electrode; and fabricating a filament-forming layer by etching a portion of the switching oxide layer that extends beyond the via. The portion of the switching oxide layer does not contact the exposed portion of the first bottom electrode. A top electrode is fabricated on the filament-forming layer. A top metal interconnect may be fabricated on the top electrode and a second isolation layer.
    Type: Application
    Filed: March 11, 2022
    Publication date: September 14, 2023
    Applicant: TetraMem Inc.
    Inventors: Minxian Zhang, Mingche Wu, Ning Ge
  • Publication number: 20230292636
    Abstract: A semiconductor device according to an embodiment of the present disclosure includes a first electrode, a first resistance change layer disposed on the first electrode, a conduction control layer disposed on the first resistance change layer, a second resistance change layer disposed on the conduction control layer, and a second electrode disposed on the second resistance change layer. The conduction control layer includes a metal-organic framework layer and metal particles embedded in the metal-organic framework layer.
    Type: Application
    Filed: August 4, 2022
    Publication date: September 14, 2023
    Inventors: Woo Cheol LEE, Won Tae KOO
  • Publication number: 20230292637
    Abstract: A phase-change memory device with reduced heater size includes a first conductive structure within a first dielectric layer. A heater element is located within a second dielectric layer disposed above the first conductive structure. The heater element includes a third dielectric layer defining a perimeter, a top portion of a heater material layer partially overlapping the perimeter of the third dielectric layer, and a bottom portion of the heater material layer overlapping the perimeter of the third dielectric layer. The bottom portion of the heater material layer is in contact with the first conductive structure. A phase-change material is located above the heater element with a bottom surface of the phase-change material being in contact with the top portion of the heater material layer. The phase-change memory device further includes a second conductive structure located above the phase-change material.
    Type: Application
    Filed: March 10, 2022
    Publication date: September 14, 2023
    Inventor: Kangguo Cheng
  • Publication number: 20230292638
    Abstract: A method of manufacturing a semiconductor device comprises: providing a substrate having a base insulation layer; forming, over the base insulation layer, a plurality of first word line structures extending in a first lateral direction and a first switching functional layer disposed between the plurality of first word line structures, the plurality of first word line structures; forming a first interlayer insulation layer on the plurality of first word line structures and the first switching functional layer; forming a plurality of second word line structures and a second switching functional layer disposed between the plurality of second word line structures; performing selective etching to the second switching functional layer, the first interlayer insulation layer, the first switching functional layer, and the base insulation layer to form bit line contact holes; and providing a conductive material in the bit line contact holes to form bit line structures.
    Type: Application
    Filed: May 18, 2023
    Publication date: September 14, 2023
    Inventor: Jae Hyun HAN
  • Publication number: 20230292639
    Abstract: A new garden rose plant of the Hybrid Tea class which has abundant, deep pink flowers and attractive foliage. This new and distinct variety has shown to be uniform and stable in the resulting generations from asexual propagation.
    Type: Application
    Filed: September 13, 2022
    Publication date: September 14, 2023
    Inventor: Mogens Nyegaard Olesen
  • Publication number: 20230292640
    Abstract: A new cultivar of Coprosma plant named ‘ALDAWN’ that is characterized by its variegated foliage dark purple-green centers and margins that are vibrant pink when mature.
    Type: Application
    Filed: January 25, 2023
    Publication date: September 14, 2023
    Inventor: Neil Alcock
  • Publication number: 20230292641
    Abstract: A new hop plant particularly distinguished by being a triploid plant with a cylindrical to club plant shape, alpha acids in cones of 15.1%, ratio of beta acids to alpha acids of 18.5%, humulene ratio to caryophyllene of 107%, and a citrus flavor, is disclosed.
    Type: Application
    Filed: December 21, 2022
    Publication date: September 14, 2023
    Applicant: Sapporo Breweries Limited
    Inventors: Seigi Kuji, Yutaka Itoga, Koichiro Koie, Mitsuhiro Uemoto, Yuto Furukawa, Masanobu Goto, Katsuyoshi Shimaoka