Abstract: To provide a galvanized steel sheet having high strength, specifically, a tensile strength of 1,150 MPa or more, and excellent resistance spot weldability, a base steel sheet has a defined chemical composition, an amount of diffusible hydrogen in the base steel sheet is 0.20 mass ppm or less, and surface roughness Ra of the galvanized steel sheet is 0.6 ?m or less.

Abstract: A method for producing an aluminium alloy extrusion, consisting of an alloy with the composition ?0.30% by weight of silicon, ?0.40% by weight of iron, 0.01-1.1% by weight of manganese, ?0.30% by weight of magnesium, ?0.70% by weight of zinc, ?0.35% by weight of chromium, ?0.20% by weight of zirconium, ?0.25% by weight of titanium, ?0.20% by weight vanadium, ?0.10% by weight of copper, up to 0.15% by weight of other impurities, each not greater than 0.03% by weight and the balance aluminium, the method comprising the steps casting the molten metal into extrusion billet a) subjecting the billet to a homogenization treatment at a holding temperature of 550 to 620° C. for 6 to 10 hours b) heating the billet to a temperature of 400 to 550° C. c) extruding the billet to a tube.

Abstract: Apparatuses and methods for producing covetic materials by exciting a hydrocarbon gas with pulse microwaves to form hydrocarbon radicals in a hot first region of a microwave reactor. Graphene nanoplatelets are formed by the nucleation, growth, and assembly of the hydrocarbon radicals, and contact a metal melt introduced downstream of the hot region to produce a mixture of molten metal and graphene nanoplatelets which assemble in-flight to form covetic materials.

Abstract: Designs and arrangements for sublimation cells are provided, which enriches an inert carrier gas with organic vapor such that the partial pressure of the organic vapor is highly stable in time. Stability is achieved by controlling the local rates of evaporation along the solid-gas interface through one or more crucibles, thereby reducing the effects of greater headspace and lowering interfacial area as the source depletes. Local evaporation rates also can be controlled using either temperature distribution or convective flow fields.

Abstract: A sputtering apparatus includes a substrate holder assembly configured to support a plurality of elongated substrates relative to a sputtering source. Each elongated substrate of the plurality of elongated substrates extends along a respective substrate axis. The sputtering apparatus also includes a holder drive assembly that is configured to rotate the substrate holder assembly about a holder axis. Each respective substrate axis is oriented non-parallel relative to the holder axis. Further, the sputtering apparatus includes a substrate drive assembly that is configured to individually rotate each elongated substrate about its respective substrate axis. The sputtered material is configured to be deposited onto the plurality of elongated substrates as the substrate holder assembly is being rotated about the holder rotational axis simultaneous with the rotation of each elongated substrate about its respective substrate axis.

Abstract: The present invention relates to a method of manufacturing ordered arrangement of graphene-carbon nano tube of metal substrate and composite coatings for carbon deposit. The method comprises the steps of placing both sputtering targets and penetrating fluid into an evacuated penetrating oven; allowing the penetrating fluid to penetrate into the sputtering targets; placing each of the penetrated sputtering targets into an evacuated magnetic control sputtering machine; controlling the cooling water in the evacuated magnetic control sputtering machine, that is, performing an evacuated magnetic control sputtering process on a metal substrate, using the organometallic salt of the penetrating fluid to maintain non-magnetic properties before being decomposed below 150° C.

Abstract: A substrate process station includes a housing including a transport region and process region. The process station further includes a magnetic levitation assembly disposed in the transport region configured to levitate and propel a substrate carrier. The magnetic levitation assembly includes a first track segment including first rails disposed in the transport region and below the process region, wherein the first rails each include a first plurality of magnets. The process station further includes a pedestal assembly comprising a pedestal disposed within the housing. The pedestal is moveable between a pedestal transfer position and a process position, wherein the pedestal is disposed between the first rails in the pedestal transfer position to receive a substrate from the substrate carrier, and wherein the pedestal is moveable between the first rails to position the received substrate in the process region in the process position.

Abstract: Falling of a substrate and deformation or breakage of the substrate are inhibited. A substrate holder includes a hole portion in which a disk-shaped substrate is placed upright, and at least four supporting members attached elastically-deformably on a periphery of the hole portion. Two of the four supporting members support disk-shaped substrate at first- and second-side circumferential end portions of disk-shaped substrate positioned at vertical-direction upper positions of disk-shaped substrate. Remaining two of the four supporting members support disk-shaped substrate at third- and fourth-side circumferential end portions of disk-shaped substrate positioned at vertical-direction lower positions of disk-shaped substrate. Central angle in disk-shaped substrate between either first- or second-side circumferential end portion and uppermost end portion of disk-shaped substrate is from 15° through 40°.

Abstract: A substrate processing method includes step a), step b), step c), step d), step e), and step f). Step a) is a step of providing a substrate that has a pattern where a protection target film is positioned on a bottom part of the pattern. Step b) is a step of laminating a catalyst film on the protection target film. Step c) is a step of forming a protection film that supports the catalyst film from below and covers the protection target film, in the pattern, by a VLS growth method. Step d) is a step of removing the catalyst film. Step e) is a step of applying a predetermined process to a part of the substrate that is different from the pattern in a state where the protection target film is covered by the protection film. Step f) is a step of removing the protection film in the pattern.

Abstract: An apparatus deposits carbon-containing structures on a substrate conveyed through an interior space of a housing. The interior space has a central zone between a first peripheral zone and a second peripheral zone. The substrate enters the housing through a first opening of the housing, passes through the first peripheral zone, central zone, and second peripheral zone, and leaves the housing through a second opening of the housing. The second peripheral zone has a gas inlet with a gas outlet opening that feeds a carbon-containing process gas into the housing. The housing has a heating device partially disposed in the central region for thermally activating the process gas. A pump evacuates gas from the interior space through a gas outlet. Means are provided for the controlled entry of a reactive gas into the first and second peripheral zones.

Abstract: The current disclosure relates to methods of forming a vanadium nitride-containing layer. The method comprises providing a substrate within a reaction chamber of a reactor and depositing a vanadium nitride-containing layer onto a surface of the substrate, wherein the deposition process comprises providing a vanadium precursor to the reaction chamber and providing a nitrogen precursor to the reaction chamber. The disclosure further relates to structures and devices comprising the vanadium nitride-containing layer.

Abstract: An apparatus (1) for coaling a substrate (2) has a vacuum chamber (10) and at least one vacuum pump (11) which is designed to evacuate the vacuum chamber (10). At least one substrate mount (20) is arranged inside the vacuum chamber (10) and is designed to receive the substrate (2) to be coated. At least one coating-producing device is arranged inside the vacuum chamber (10). The vacuum chamber (10) also contains at least one cleaning device (4), which includes at least one adhesion roller (40). The adhesive roller (40) is configured to be passed over a surface (201) of the substrate (2) and is designed to bind particles (25) adhering to the substrate (2). A method for coating a substrate (2) utilizes the aforementioned apparatus.

Abstract: Examples of a cleaning method includes supplying a cleaning gas into an exhaust duct that provides an exhaust flow passage of a gas supplied to an area above a susceptor, the exhaust duct having a shape surrounding the susceptor in plan view, and activating the cleaning gas to clean an inside of the exhaust duct.

Abstract: A film forming method includes: a preparation process of preparing a substrate having a surface from which a first film without containing silicon and a second film are exposed; a first film formation process of forming a self-assembled monolayer, which has a fluorine-containing functional group and inhibits formation of a third film containing silicon, on the first film; a second film formation process of forming the third film on the second film; a modification process of decomposing the self-assembled monolayer by plasma using a gas containing hydrogen and nitrogen while maintaining a temperature of the substrate to be 70 degrees C. or lower, so that a side portion of the third film, which is formed in a vicinity of the self-assembled monolayer, is modified into ammonium fluorosilicate by active species contained in the decomposed self-assembled monolayer; and a removal process of removing the ammonium fluorosilicate.

Abstract: A high-speed, uniform and high-quality surface treatment apparatus is described. The surface treatment apparatus includes a fixed hollow cylindrical chamber body and a rotatable polygonal prism inside the chamber body. Several flat-substrate holders are symmetrically disposed on the prism surface. The substrate holders revolve as the prism rotates. On the fixed chamber wall, several gas inlet channels, pumping channels and processing units are installed according to the symmetric configuration of the substrate holders. Then, as the substrate holders revolve, the surface treatment processes will occur periodically, including the injection of gas reactants into, the activation of gases in, and the pumping of after-reaction gases out of the processing spaces, defined by the substrate holders and the chamber wall. The substrates will therefore undergo many cycles of periodic surface treatment processes.

Abstract: A heater assembly includes: a first heater sheet including a first electric heater having no self-controllability and a first insulator electrically insulating and surrounding the first electric heater, the first heater sheet being deformable in accordance with a shape of a heating target; and one or more second heater sheets each including one or more second electric heaters having self-controllability and a second insulator electrically insulating and surrounding the one or more second electric heaters, the one or more second heater sheets being deformable in accordance with the shape of the heating target.

Abstract: A substrate processing apparatus is provided. A substrate processing apparatus comprises a reaction chamber provided with a chamber wall comprising a first sidewall, a second sidewall disposed opposite to the first sidewall, a bottom wall connected to the first sidewall and the second sidewall; a gate valve tunnel disposed in the first sidewall configured to be closed by a gate valve; a substrate support provided with a top plate and a shaft, the substrate support being disposed within the reaction chamber and configured to support a substrate on the top plate, wherein the substrate support is configured to be vertically movable between a process position and a transfer position; and a liner disposed around perimeter of the substrate support and configured to move with the substrate support, wherein an outer wall of the liner is configured to cover the gate valve tunnel when the substrate support is in the process position.

Abstract: Frame for use in coating a reinforcing fiber are provided. The frame includes a first frame end having a first cross-sectional shape. The first cross-sectional shape has one or more contact locations that are spaced apart from each other. The reinforcing fiber contacts the first frame end at the one or more contact locations. Methods are also provided for coating such a fiber.

Abstract: An anti-cavitation damping composite metal structure for a flow passage component and a preparation method thereof are provided. The preparation method includes: cladding a gradient functional material layer by layer on a substrate of a flow passage component; forming periodic structures on a surface of each layer of the gradient functional material through etching by an ultrafast laser to absorb a part of an impact load energy caused by cavitation of the flow passage component, where the layers of the gradient functional material form a gradient coating with a toughness increasing layer by layer and a hardness decreasing layer by layer from bottom to top; and forming nano twins on a surface layer by a laser shock peening technique, and implanting a residual compressive stress to further improve anti-cavitation resistance of a surface.

Abstract: To provide a steel sheet for hot stamping that further improves productivity of a hot-stamped member, has excellent appearance, and has excellent spot weldability, and a hot-stamped member. A steel sheet for hot stamping according to the present invention includes, on the whole of at least one surface of the steel sheet, a surface-treated film whose emissivity at a wavelength of 8.0 ?m at 25° C. is 60% or more, in which the surface-treated film contains carbon black, and one or more of oxides selected from a group consisting of a Zr oxide, a Zn oxide, and a Ti oxide, in which the carbon black and the oxides exist while being dispersed over the entire surface-treated film, the surface-treated film has a silica content of 0 to 0.3 g/m2, and when an adhesion amount of the carbon black and an adhesion amount of the oxides are set to XCB (g/m2) and XOxide (g/m2), respectively, an equation (1) is satisfied.

Abstract: A fluoride ion cleaning system is provided. The system includes a retort including an interior sized to receive at least one component therein. The at least one component has a target area defined thereon. The system also includes a gas distribution system. The gas distribution system includes a manifold configured to provide reaction gas within the interior, a flow modulator configured to agitate the reaction gas within the interior, and at least one nozzle in flow communication with the flow modulator. The at least one nozzle is adapted to define an agitated flow of reaction gas at the target area of the at least one component.

Abstract: A system for forming ammonia including an anode, a cathode in electrical communication with the anode, and a catalyst material positioned in an electrical communication pathway between the cathode and the anode, the catalyst material including nanoparticles including at least one of a conductor and a semiconductor, the nanoparticles having an interior cavity, wherein the system is configured to use nitrogen and water to generate ammonia.

Abstract: The invention relates to the energy industry, in particular to a device and a method for producing hydrogen, and can be used, for example, as a part of fuel systems of various vehicles in order to supply fuel to a hydrogen engine or hydrogen fuel cells. In the first aspect, the claimed invention is a device for producing hydrogen, comprising a housing and at least one rechargeable electrolytic cell with electrodes, which is mounted in the housing, the electrodes being an anode and a cathode, the cell being at least partially filled with a liquid water-based electrolyte, wherein the device comprises a sodium electrode isolated from the liquid electrolyte by a solid electrolyte configured to exchange positively charged sodium ions with the liquid electrolyte, and the cathode and the anode are separated by an ion-permeable partition. In the second aspect, the claimed invention is a method for producing hydrogen by alternating the discharging and charging processes of a rechargeable electrolytic cell.

Abstract: In the water electrolysis system, when the water electrolysis cell stack is started, hydrogen is circulated through a hydrogen electrode of the water electrolysis cell stack, oxygen or air is circulated through an oxygen electrode of the water electrolysis cell stack, or oxygen or air is circulated through the oxygen electrode when the operation of the water electrolysis cell stack is stopped. A water electrolysis system, wherein an open circuit voltage of the water electrolysis cell stack is measured, and if the open circuit voltage is less than a threshold value, an abnormality is determined.

Abstract: An electrolytic cell includes a cation exchange membrane, a cathode compartment, and an anode compartment. The cathode compartment includes a gas diffusion electrode and a flow channel element, in which the flow channel element is between the cation exchange membrane and the gas diffusion electrode, and has a plurality of flow channels arranged in parallel with each other. The anode compartment includes an anode mesh, in which the cation exchange membrane is between the anode mesh and the flow channel element. A distance between the anode mesh and the gas diffusion electrode is substantially equal to the sum of a first thickness of the cation exchange membrane and a second thickness of the flow channel element. The novel electrolytic cell can combine with a chloralkali electrolytic cell to deal with gaseous CO2 and produce products, e.g., synthesis gas, for other purposes.

Abstract: There is disclosed an improved Kolbe reactor system for converting electrical power into a hydrocarbon fuel and hydrogen. More specifically, the present disclosure provides a Kolbe reactor system comprising an open cavity Kolbe reactor and an initial hydrocarbon chemical formulation comprising from about 3N to about 6N C2-C5 carboxylic acid and from about 2M to about 4M alkali C2-C5 carboxylate, wherein the C2-C5 carboxylate and carboxylic acid have the same carbon alkyl length. The Kolbe reactor system can be continuously fed with C2-C5 carboxylic acid to maintain the initial formulation for a continuous process. Electrical energy is stored by converting the carboxylic acid to hydrocarbon fuel and hydrogen, and is recovered by combustion of the hydrocarbon fuel and hydrogen, and or conversion in a hydrogen fuel cell.

Abstract: A method of forming oxygen or hydrogen gas from water includes flowing an anolyte from outside an electrochemical cell to contact an anode of the electrochemical cell, wherein the method is free of flowing a catholyte from outside of the electrochemical cell to contact a cathode of the electrochemical cell, and wherein the cathode forms hydrogen gas. Alternatively, the method includes flowing a catholyte from outside the electrochemical cell to contact the cathode of the electrochemical cell, wherein the method is free of flowing an anolyte from outside of the electrochemical cell to contact the anode of the electrochemical cell, and wherein the anode forms oxygen gas. The electrochemical cell includes the anode, the cathode, and an ion exchange membrane between the anode and the cathode.

Abstract: A modular system for hydrogen generation includes a plurality of cores electrically connected in series to a power supply, wherein each core includes an electrolyzer and a bypass circuit configured to electrically isolate the core from the power supply. The modular system also includes a hub including a water source and a controller, wherein the water source is in fluid communication with the electrolyzer of each of the plurality of cores, and the controller includes a switch activatable, in response to a triggering condition, to electrically isolate one or more of the plurality of cores from the power supply via a respective bypass circuit.

Abstract: Provided is a surface-coated metal porous body having a three-dimensional network structure, the surface-coated metal porous body including: a framework forming the three-dimensional network structure; and a coating film provided on a surface of the framework, wherein the framework has a body including a metal element as a constituent element, the coating film includes a scale-like carbon material and a fine-grained conductive material, a distance D between two points that are farthest from each other on an outer perimeter of a main surface of the scale-like carbon material is 5% or more and 120% or less relative to a thickness of the framework, and the scale-like carbon material is deposited on the surface of the framework.

Abstract: The present invention provides a gold-copper alloy nanostructure which can be used as a catalyst for electrochemical CO2 reduction reaction and a method for synthesizing the same. The provided gold-copper alloy nanostructure has a heterophase composed of a hexagonal close-packed phase and a face-centered cubic phase. This gold-copper nanostructure shows an atomic ratio of 99 to 1 for gold to copper. The present invention adopts delicately structural modulation of nanomaterials based on the phase engineering of nanomaterials strategy and offers a promising way for the design and preparation of novel catalysts, especially those with unconventional phase, for enhancing their performances in various catalytic applications.

Abstract: A photoelectrode is provided. The photoelectrode includes a transparent substrate. The photoelectrode further includes a layer of crystalline hematite nanoparticles at least partially covering a surface of the transparent substrate. The photoelectrode further includes a phosphate ions (Pi) interfacial layer coated on a surface of the layer of crystalline hematite nanoparticles. The photoelectrode further includes a plurality of CoFe-Prussian blue analogues (CoFe-PBA) particles uniformly disposed on a surface of the phosphate (Pi) interfacial layer. Methods of making the photoelectrode and photoelectrochemical (PEC) water splitting are also provided.

Abstract: A fuel electrode for a solid oxide electrolysis cell (SOEC) with improved high-temperature electrolysis efficiency includes a carrier having a first particle including nickel, and a second particle comprising yttria-stabilized zirconia, and a catalyst having a first element including at least one selected from the group consisting of Fe, Co, Pd, Cu, Mo, and combinations thereof, and a second element comprising gadolinia-doped ceria.

Abstract: An electrolyzer comprising a first and a second electrode and an ion exchange membrane arranged in-between the first and the second electrode. Each electrode comprises an electrically conductive element. At least one of the electrodes also comprises a catalyst structure comprising an electrically conductive material. The electrolyzer also comprises at least one feeding means, wherein the feeding means is arranged to introduce a variable electromagnetic field into the electrolyzer. The variable electromagnetic field is arranged to create a temperature gradient in the electrolyzer by increasing a temperature of the catalyst structure.

Abstract: A portable hydrogen electrolyzer integrated with water purifier indicating lifetime percentage of purification materials includes an electrolysis cell, a purification chamber, and an alterable color drying tower. A purification chamber ensures that the device can use regular water, instead of deionized water, for hydrogen production. Various configurations have been contemplated using fewer parts than other devices to decrease the risk of hydrogen leakage and improve the user experience.

Abstract: In the water electrolysis system, a hydrogen pressure in a water electrolysis cell is measured, a 1 voltage in a 1 current during normal operation of the water electrolysis cell is measured when the hydrogen pressure is within a normal range, and when the 1 voltage exceeds a 1 normal cell voltage threshold in the 1 current, a 1 resistance of the water electrolysis cell is calculated from an inclination of a voltage of the water electrolysis cell obtained by sweeping a predetermined current to the water electrolysis cell. A water electrolysis system, wherein when the 1 resistance is higher than a predetermined resistance threshold, an abnormality of the water electrolysis cell is determined, and an operation of the water electrolysis cell is stopped.

Abstract: The invention relates to water-electrolysis hydrogen production technology, in particular to electrolyte supply structure for providing uniform fluid flow for large alkaline hydrogen electrolyzers. The electrolyte supply structure includes a bipolar electrode frame that has an electrolyzer cell inside, an outlet located at the top, and three inlets (a first inlet, a second inlet, and a third inlet) located at the left, middle, and right of the bottom, wherein the third inlet having a barrier plate located at the left inside. This invention, by setting the three inlets replacing the original two inlets and adjusting the inlets' width, quantities, and inlets' angles, effectively increases the uniformity of fluid flow inside the cell, improves performance, and has no influence on mechanical processing and cost.

Abstract: The invention regards a method for electrochemical ammonia synthesis, comprising the steps of: —providing an electrolysis cell having a cathode, —contracting the cathode with a source of cations preferably lithium cations, a source of nitrogen a source of oxygen, and a source of protons, wherein the oxygen source provides a predefined oxygen concentration, and —subjecting the cell to a potential and current load, whereby ammonia is synthesized.

Abstract: An object comprising a chromium-based coating on a substrate is disclosed, wherein the chromium is electroplated from an aqueous electroplating bath comprising trivalent chromium cations, wherein the chromium-based coating comprises 87-98 weight-% of chromium, 0.3-5 weight-% of carbon, and 0.1-11 weight-% of nickel and/or iron, and wherein the chromium-based coating has a Vickers microhardness value of 1000-2000 HV, and wherein the chromium-based coating does not contain chromium carbide. Further is disclosed a method for its production, and an aqueous electroplating bath.

Abstract: The present invention is directed toward a platinum electrolyte which contains certain additives, and to a method for the electrolytic deposition of a platinum layer with the aid of the electrolyte according to the invention.

Abstract: A cathode conduction mechanism and an electroplating system are provided. The cathode conduction mechanism includes a first conductive belt and a first conductive belt assembly, the first conductive belt assembly includes a first belt roll and a second belt roll, and the first conductive belt covering the first belt roll and the second belt roll; and a second conductive belt and a second conductive belt assembly, the second conductive belt assembly includes a third belt roll and a fourth belt roll, and the second conductive belt covering the third belt roll and the fourth belt roll. According to the present disclosure, the lower conductive belt does not pass through the bottom of the electroplating bath to prevent leakage. The upper conductive belt and the lower conductive belt each are only driven by two belt rolls to greatly save a cost.

Abstract: The invention relates to a method for grafting an organic film onto an electrically conductive or semiconductive surface by electro-reduction of a solution, wherein the solution comprises one diazonium salt and one monomer bearing at least one chain polymerizable functional group. During the electrolyzing process, at least one protocole consisting of an electrical polarization of the surface by applying a variable potential over at least a range of values which are more cathodic that the reduction or peak potential of all diazonium salts in said solution is applied. The invention also relates to an electrically conducting or semiconducting surface obtained by implementing this method. The invention further relates to electrolytic compositions.

Abstract: Described is a method for wet-chemical treatment of microchip substrates, wherein the microchip substrates are inserted into a holding device. The holding device is docked using an adapter onto a unit for wet-chemical treatment, such as metallization.

Abstract: A method for removing ferric ions contained in a sulfate-based iron electroplating solution comprises a step of regeneration for reduction of the ferric ions by circulating a ferric ion-containing sulfate-based iron electroplating solution in a solution bath containing ferrous metal charged therein, wherein the ferrous metal is charged in an amount that satisfies the following formula (1): S?0.01 Iconv/Cmax (1). In formula (1), S indicates a total surface (m2) of ferrous metal, Cmax indicates a maximum permissible ion concentration level (g/L) of the ferric ions in the solution, and Iconv indicates, as represented by the following formula (2), converted current (A) obtained by dividing the sum of current (I) applied to an electroplated cell during the plating time (tp, sec) by the regeneration time (tr, sec) for reduction of the ferric ions in an electrolyte.

Abstract: The present invention provides a single-crystal high-nickel positive electrode material and a preparation method therefor and an application thereof. The preparation method comprises the following steps: (1) mixing a precursor, a lithium source, and a nano oxide, and performing primary sintering treatment in an oxygen-containing atmosphere to obtain a primary sintered material; and (2) mixing the primary sintered material obtained in step (1) with a titanium source and a cobalt source, and performing secondary sintering treatment in an oxygen-containing atmosphere to obtain the single-crystal high-nickel positive electrode material. The present invention uses a Ti/Co co-coating method, the residual alkali amount of the prepared single-crystal high-nickel positive electrode material can be greatly reduced, and the capacity and the rate capability can also be kept at a high level, so that the technological process is reduced, and the cost is reduced.

Abstract: A crucible for manufacturing semiconductor crystals may be disposed adjacent to a heating element. The crucible may include a first seed crystal site and a second seed crystal site at opposed ends of the crucible. A compartment may be defined between an outer wall and an inner wall of the crucible, where the inner wall is formed with a porous graphite membrane. Source powder loaded into the compartment may then be heated by the heating element to sublimate and diffuse from the compartment and through the inner wall to provide crystal growth of a first seed crystal at the first seed crystal site and of a second seed crystal at the second seed crystal site.

Abstract: An apparatus produces a doped Czochralski crystal. The apparatus includes: a pressure vessel; a crucible in the pressure vessel for containing liquid silicon; and a second apparatus for doping the melt. The second apparatus includes: a housing; a reservoir vessel holding a dopant; a conveyor belt conveying the dopant; a third apparatus for shaping a dumped bed on the conveyor belt; and a pipe whose first end is accessible by the dopant from the conveyor belt and whose second end points in a direction of the liquid silicon and is closed off from the liquid silicon. The third apparatus has a half-pipe having a diameter smaller than a width of the conveyor belt, which is closed on one side, the other side being open, and is arranged over the conveyor belt such that the open side points in the direction of conveyance of the dopant.

Abstract: The present disclosure provides a temperature field device for crystal growth. The temperature field device may include a drum; a filler filled in the drum and configured to support a crucible; a bottom plate mounted on a bottom of the temperature field device and covering a bottom end of the drum; and a cover plate mounted on a top of the temperature filed device and covering a top end of the drum.

Abstract: A method is disclosed of growing an epitaxial layer on a substrate (20) of monocrystalline Silicon Carbide, SiC. The method comprises providing (S100) a source material (10) of monolithic polycrystalline SiC with a columnar micro-grain structure and the substrate (20) of monocrystalline SiC, in a chamber (5) of a crucible with a distance therein between, arranging (S102) a carbon getter (1) in said chamber (5) of the crucible close to the source material (10) and the substrate (20), said carbon getter (1) having a melting point higher than 2200° C. and an ability of forming a carbide layer with carbon species evaporated from SiC, reducing (S106) pressure in the chamber (5), inserting (S108) an inert gas into the chamber (5), raising (S110) the temperature in the chamber (5) to a growth temperature, such that a growth rate between 1 ?m/h and 1 mm/h, is achieved, and keeping (S112) the growth temperature until a growth of at least 5 ?m has been accomplished on the substrate (20).

Abstract: A system (100) for producing an epitaxial monocrystalline layer on a substrate (20) comprising: an inner container (30) defining a cavity (5) for accommodating a source material (10) and the substrate (20); an insulation container (50) arranged to accommodate the inner container (30) therein; an outer container (60) arranged to accommodate the insulation container (50) and the inner container (30) therein; and heating means (70) arranged outside the outer container (60) and configured to heat the cavity (5), wherein the inner container (30) comprises a support structure for supporting a solid monolithic source material (10) at a predetermined distance above the substrate (20) in the cavity (5) such that a growth surface of the substrate (20) is entirely exposed to the source material (10). A corresponding method is also disclosed.

Abstract: In an apparatus and method growing a SiC single crystal, a PVT growth apparatus is provided with a single crystal SiC seed and a SiC source material positioned in spaced relation in a growth crucible. A resistance heater heats the growth crucible such that the SiC source material sublimates and is transported via a temperature gradient that forms in the growth crucible in response to the heater heating the growth crucible to the single crystal SiC seed where the sublimated SiC source material condenses forming a growing SiC single crystal. Purely axial heat fluxes passing through the bottom and the top of the growth crucible form a flat isotherm at least at a growth interface of the growing SiC single crystal on the single crystal SiC seed.