Patents Issued in December 17, 2024
  • Patent number: 12170156
    Abstract: Embodiments of the present disclosure relate to a power equipment and method for providing the same. Embodiments of the present disclosure relate to a power equipment. The power equipment includes a high voltage part, a low voltage part, and an insulation oil adapted to impregnate the high voltage part and insulate the high voltage part from the low voltage part. The insulation oil is partially filled with polymer particles with a lower thermal expansion coefficient than the insulation oil. According to embodiments of the present disclosure, the degree of expansion of the insulation medium can be reduced in a cost-effective way.
    Type: Grant
    Filed: February 24, 2020
    Date of Patent: December 17, 2024
    Assignee: Hitachi Energy Ltd
    Inventors: XiaoBing Dong, Lars Magnusson, Xuan Dong
  • Patent number: 12170157
    Abstract: Disclosed is an armored cable assembly which may include a plurality of conductors and a metal sheath disposed over the plurality of conductors. The metal sheath may have a plurality of revolutions extending helically along a lengthwise axis, each of the plurality of revolutions including a first section having a curved profile, a second section extending from the first section, the second section having a planar profile, and a third section extending from the second section. The third section may include a free end angled towards an interior cavity of the metal sheath, the free end extending past a plane defined by a bottom most point of the first section of an adjacent revolution, the plane extending perpendicular to the second section.
    Type: Grant
    Filed: March 18, 2024
    Date of Patent: December 17, 2024
    Assignee: AFC Cable Systems, Inc.
    Inventors: Peter Lafreniere, Stephen Lundgren, Paulo Damoura, Ronald Pegg, Antonio Araujo, David Campbell
  • Patent number: 12170158
    Abstract: A metallic cable includes, in order from an inner side thereof, a plurality of coated conduction wires, a press winding tape, a laminated tape, and an outer jacket. The outer jacket is provided on an outer circumference of the laminated tape and such that it covers the outer circumference of the laminated tape. The outer jacket is made of polyethylene having a density greater than or equal to that of medium-density polyethylene (MDPE) (?930 kg/m3), and more preferably made of high-density polyethylene (?942 kg/m3). If polyethylene having a density that is equal to or greater than that of MDPE is used to form the outer jacket, the temperature that is appropriate for extruding MDPE approaches a bonding temperature range of the resin layer of the laminated tape. The resin layer and the metal layer can be bonded and joined together at an overlapped part, tightly enclosing a cable core.
    Type: Grant
    Filed: November 9, 2022
    Date of Patent: December 17, 2024
    Assignee: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Toyomitsu Asakura, Eiji Konda, Yoshimitsu Kuroki
  • Patent number: 12170159
    Abstract: Cables, including electrical cables. The cables are provided with a series of elements designed to interlock with each other when a first length of cable is pressed against a second length of cable, the element including protrusions and spaces between the protrusions. A user folds a length of cable on itself or on another cable, snugly pressing the protrusions into the spaces, to store the cable, or to restrict the movement of the cable during use. In this manner, movement of the cable is restricted into the configuration set by the user, and preventing the cable from becoming tangled, knotted, or so forth.
    Type: Grant
    Filed: March 1, 2023
    Date of Patent: December 17, 2024
    Inventor: Morris E. Cohen
  • Patent number: 12170160
    Abstract: A soft magnetic powder contains a particle having a composition represented by FexCuaNbb(Si1-yBy)100-x-a-b, and 0.3?a?2.0, 2.0?b?4.0, and 75.5?x?79.5, and y is a number satisfying f(x)?y?0.99, and f(x)=(4×10?34)x17.56. The particle includes a crystal grain having a grain size of 1 nm to 30 nm, a Cu segregation portion, and a crystal grain boundary. A content proportion of the crystal grain is 30% or more. When the Cu segregation portion positioned in a surface layer portion and having a grain size of 2 nm to 10 nm is referred to as a first Cu segregation portion, and the Cu segregation portion positioned in an inner portion and having a grain size of 2 nm to 7 nm is referred to as a second Cu segregation portion, a number proportion of the first Cu segregation portion is 80% or more, a number proportion of the second Cu segregation portion is 80% or more, and the number of the second Cu segregation portion is twice or more the number of the first Cu segregation portion.
    Type: Grant
    Filed: January 26, 2023
    Date of Patent: December 17, 2024
    Assignee: SEIKO EPSON CORPORATION
    Inventors: Mayu Watanabe, Mitsutaka Inui
  • Patent number: 12170161
    Abstract: A process and a system for producing a stock solution for production of a ferrofluid is provided. The process includes contacting an acidic solution in a reaction container filled with an excess of a bulk material containing Fe(III) and optionally Fe(II). The acid reacts with the bulk material to form the stock solution (Ls) having dissolved ferric (Fe(III)) and optionally ferrous (Fe(II)) ions which is then separated from the bulk material.
    Type: Grant
    Filed: March 27, 2020
    Date of Patent: December 17, 2024
    Assignees: URBAN MINING CORP B.V., TECHNISCHE UNIVERSITEIT DELFT
    Inventors: Piotr Jakub Glazer, Ronald Alphons Penners, Simon Petrus Maria Berkhout, Peter Carlo Rem
  • Patent number: 12170162
    Abstract: The present invention comprises Magnetic Tunnel Junctions and Bit-Patterned Media with a warped geometry with the purpose of attaining large thermal stability factors and dramatically increasing the scalability of the magnetic bits while still allowing the reduction of switching current density and switching magnetic field, and also increasing switching speed. The warped shape allows providing thermal stability to the bits through dynamic exchange energy barrier and also by providing additional net magnetic anisotropy through shape-induced reduction of the demagnetization field. The dynamic exchange energy barrier in turn allows engineering the damping torque and the free-layer's magnetic parameters to a much larger extent than the current planar technology. It also allows much faster magnetic-field-induced switching of patterned bits than it is possible with current hard disk drive technology, through the use of precession torque instead of conventional damping torque.
    Type: Grant
    Filed: December 8, 2020
    Date of Patent: December 17, 2024
    Inventor: Jannier Maximo Roiz-Wilson
  • Patent number: 12170163
    Abstract: Disclosed herein is a coil component that includes a coil pattern embedded in a resin body. The resin body includes a winding core area surrounded by the coil pattern and having a first surface and a substantially flat second surface different in the circumferential direction position from the first surface, and a first surrounding area covering the first surface of the winding core area. The coil pattern includes first sections extending along the first surface of the winding core area and second sections extending along the second surface of the winding core area. One ends of the first sections are connected respectively to their corresponding one ends of the second sections. The other ends of the first sections are connected respectively to their corresponding other ends of the second sections.
    Type: Grant
    Filed: October 18, 2021
    Date of Patent: December 17, 2024
    Assignee: TDK Corporation
    Inventors: Nobuyuki Okuzawa, Kazuhiko Ito, Munehiro Takaku, Junichiro Urabe
  • Patent number: 12170164
    Abstract: A magnetic assembly includes a multilevel lamination or metallization structure with a core dielectric layer, dielectric stack layers, a high permittivity dielectric layer, and first and second patterned conductive features, the dielectric stack layers having a first relative permittivity, the high permittivity dielectric layer extends between and contacting the first patterned conductive feature and one of the dielectric stack layers or the core dielectric layer, the high permittivity dielectric layer has a second relative permittivity, and the second relative permittivity is at least 1.5 times the first relative permittivity to mitigate dielectric breakdown in isolation products.
    Type: Grant
    Filed: December 9, 2021
    Date of Patent: December 17, 2024
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventor: Enis Tuncer
  • Patent number: 12170165
    Abstract: Electrical/magnetic components and methods of making such components are provided. One method includes providing a multilayer printed circuit board (PCB) including conductive features arranged on conductive layers of the PCB to form one or more windings around one or more predetermined axes. The method further includes forming a hole in the PCB at each of the one or more predetermined axes to accommodate one or more core legs. For each hole, an inner edge of one of the windings overlaps an edge of the hole in a lateral direction after the hole is formed. The method further includes assembling a magnetically permeable core including the one or more core legs, each core leg extending into one of the holes at the one or more predetermined axes.
    Type: Grant
    Filed: January 3, 2023
    Date of Patent: December 17, 2024
    Assignee: Vicor Corporation
    Inventor: Patrizio Vinciarelli
  • Patent number: 12170166
    Abstract: Disclosed is a radiation and magnetic field generating apparatus irradiating photon beam radiation to in-body affected tissue of a subject. The apparatus includes a radiation generating unit that irradiates the photon beam radiation to the subject and induces generation of secondary electrons in an area of the subject where the photon beam radiation is irradiated, a magnetic field generating unit that includes an insertion structure for forming a low-density space and forms a magnetic field in an area in which the secondary electrons are generated, and a synchronization control unit that controls formation of the magnetic field and controls the formation of the magnetic field such that the secondary electrons move while avoiding normal tissue adjacent to the affected tissue.
    Type: Grant
    Filed: October 24, 2022
    Date of Patent: December 17, 2024
    Assignee: RADEXEL INC.
    Inventor: Jeong Won Lee
  • Patent number: 12170167
    Abstract: An electromagnetic actuating device (8) is for a variable valve drive, in particular electromagnetic switching valve lever systems. The electromagnetic actuating device comprises a base plate (3), a housing which is secured to the base plate (3) and a coil. The housing is designed as a bracket housing (12) and can form part of the magnetic circuit.
    Type: Grant
    Filed: August 14, 2020
    Date of Patent: December 17, 2024
    Assignee: Schaeffler Technologies AG & Co. KG
    Inventors: Marco Jilke, Florian Hacker
  • Patent number: 12170168
    Abstract: An electrode suitable for constructing an electrochemical double layer capacitor and/or supercapacitor is provided that includes an electrode material a metal organic framework (MOF), wherein the MOF includes an inorganic building unit including metal atoms selected from group 1 to group 12 elements, and functional groups of organic linkers including oxygen (O) and one or more atoms selected from the group comprising phosphorus (P), arsenic (As), antimony (Sb), silicon (Si), selenium (Se) and bismuth (Bi). The functional groups of the organic linkers can include phosphonate, arsonate, phosphonic acid, phosphinic acid, arsonic acids and/or arsenic acids, monoester and/or diester forms thereof. Further, the metal atoms may be selected from zinc (Zn), cadmium (Cd), copper (Cu), cobalt (Co), nickel (Ni), gold (Au) and silver (Ag). The use of the MOF as a semiconductor in semiconductor applications, a semiconductive device, such as a photovoltaic cell, including the MOF are also provided.
    Type: Grant
    Filed: July 8, 2020
    Date of Patent: December 17, 2024
    Assignee: Technische Universitat Berlin
    Inventor: Gündog Yücesan
  • Patent number: 12170169
    Abstract: A super capacitor module for a vehicle with a high voltage power source includes a super capacitor, high power control electronics for controlling and actuating charging of the super capacitor, a high-powered DC-DC converter connected to super capacitor and adapted to be connected to a low voltage power supply system, a voltage comparison circuit connected to the super capacitor and adapted to be connected to a low voltage power source, the super capacitor module being adapted to be connected to at least one electric control units (ECC) for a vehicle and/or a starter motor for a vehicle.
    Type: Grant
    Filed: October 20, 2021
    Date of Patent: December 17, 2024
    Assignee: NINGBO GEELY AUTOMOBILE RESEARCH & DEVELOPMENT CO., LTD.
    Inventors: Alexander Engström, Eric Rudervall
  • Patent number: 12170170
    Abstract: A multilayer electronic component, includes: a body including a dielectric layer, and first and second internal electrodes alternately disposed in a first direction with the dielectric layer interposed therebetween; a first connection portion including a first conductive layer disposed on the third surface and connected to the first internal electrode, and a first insulating layer disposed on the first conductive layer; a second connection portion including a second conductive layer disposed on the fourth surface and connected to the second internal electrode, and a second insulating layer disposed on the second conductive layer; a first external electrode including a first electrode layer connected to the first conductive layer, wherein the first external electrode is disposed on any one of the first, second, fifth, and sixth surfaces; and a second external electrode including a second electrode layer connected to the second conductive layer.
    Type: Grant
    Filed: November 10, 2021
    Date of Patent: December 17, 2024
    Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Jun Hyeong Kim, Myung Jun Park, Jin Soo Park, Yeon Song Kang, Eun Jin Kim, Kyu Sik Park, Kang Ha Lee
  • Patent number: 12170171
    Abstract: An electronic component that includes: a ceramic body; and an external electrode on a surface of the ceramic body, wherein the external electrode includes: a base layer in contact with the surface of the ceramic body, the base layer including a granulate of a metal material and a continuous phase of a titanium-containing oxide present around the granulate of the metal material; and a plating layer on the base layer.
    Type: Grant
    Filed: November 29, 2023
    Date of Patent: December 17, 2024
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Yuuta Hoshino
  • Patent number: 12170172
    Abstract: A capacitor includes a capacitor body including a plurality of dielectric layers and a plurality of internal electrode layers being stacked alternately. The plurality of dielectric layers mainly include crystal grains containing barium titanate as a main component. The plurality of dielectric layers contain magnesium, a rare earth element, and manganese. The plurality of dielectric layers include oxide grains containing at least one of the magnesium, the rare earth element, or the manganese as a single element.
    Type: Grant
    Filed: September 10, 2020
    Date of Patent: December 17, 2024
    Assignee: KYOCERA Corporation
    Inventors: Toshiki Okazaki, Nobuyoshi Fujikawa
  • Patent number: 12170173
    Abstract: A multilayer ceramic capacitor includes a substantially rectangular parallelepiped multilayer body including dielectric ceramic layers and internal electrode layers laminated alternately in the lamination direction, first and second main surfaces opposed to each other in the lamination direction, first and second lateral surfaces opposed to each other in the width direction orthogonal or substantially orthogonal to the lamination direction, and first and second end surfaces opposed to each other in the length direction orthogonal or substantially orthogonal to the lamination direction and the width direction, and a pair of external electrodes at both ends of the multilayer body in the length direction to cover at least the first and second end surfaces, and connected to the internal electrode layers. A first protrusion is provided at each of four corners on a surface of at least one of the first and second main surfaces having a substantially rectangular shape.
    Type: Grant
    Filed: October 27, 2022
    Date of Patent: December 17, 2024
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Shinichi Kokawa, Satoshi Maeno
  • Patent number: 12170174
    Abstract: A multi-layer ceramic electronic component includes: a ceramic body that includes internal electrodes laminated in a first direction, and a pair of main surfaces including a center region facing in the first direction; and a pair of external electrodes connected to the internal electrodes and facing each other in a second direction orthogonal to the first direction, a dimension of the ceramic body in the first direction being 1.1 times or more and 1.6 times or less a dimension of the ceramic body in a third direction orthogonal to the first direction and the second direction, the center region being formed at a center portion of at least one of the pair of main surfaces in the second direction.
    Type: Grant
    Filed: January 24, 2023
    Date of Patent: December 17, 2024
    Assignee: Taiyo Yuden Co., Ltd.
    Inventor: Hiroaki Sato
  • Patent number: 12170175
    Abstract: A multi-layer ceramic capacitor includes: a multi-layer unit including ceramic layers laminated in a first direction and electrodes disposed between the ceramic layers, positions of end portions of the electrodes falling within a range of 0.5 ?m in a second direction; and side margins each containing manganese or magnesium and silicon and facing each other in the second direction. When each margin is equally divided into an inner region and an outer region, a total concentration of manganese and magnesium in the outer region is higher than a total concentration of manganese and magnesium in the inner region and higher than a total concentration of manganese and magnesium in the ceramic layers, and a concentration of silicon in the inner region is not less than a concentration of silicon in the outer region and higher than a concentration of silicon in the ceramic layers.
    Type: Grant
    Filed: July 25, 2023
    Date of Patent: December 17, 2024
    Assignee: TAIYO YUDEN CO., LTD.
    Inventor: Kotaro Mizuno
  • Patent number: 12170176
    Abstract: A multiple function button for an information handling system includes an outer button and an inner button. The outer button includes a first contact component positioned over a first contact of the information handling system. The first contact is associated with a first operation within the information handling system. The inner button is inserted within the outer button and includes a second contact component. The second contact component is positioned over a second contact of the information handling system, which in turn is associated with a second operation within the information handling system.
    Type: Grant
    Filed: May 26, 2022
    Date of Patent: December 17, 2024
    Assignee: Dell Products L.P.
    Inventors: Jer-Yo Lee, Chun-Ting Lu, Cheng-Hsiang Chuang
  • Patent number: 12170177
    Abstract: An isolation ground switch has a housing having a front housing portion and a back housing portion defining a housing cavity therebetween. A conductive switch plate is positioned in the housing cavity and rotatable between a closed position and an open position. A plurality of termination studs are mounted to the front housing portion, each termination stud having a conductive projection extending into the housing cavity. The conductive projection of each termination stud engages the switch plate when the switch plate rotates to the closed position, and when the switch plate rotates to the open position, the switch plate does not contact the termination studs and is conductively isolated.
    Type: Grant
    Filed: June 26, 2020
    Date of Patent: December 17, 2024
    Assignee: MacLean Power, L.L.C.
    Inventors: Matthew A. Widtmann, Adam P. Cook, Cole J. Blazer
  • Patent number: 12170178
    Abstract: A dual conductor Thomson coil actuator for use in opening the separable contacts of a circuit interrupter comprises two nested conductors wound to form a single coil, rather than the traditional design comprising one single conductor wound to form a coil of the same size. Each of the two conductors can be excited by half the capacitance that would be used to excite the traditional single conductor coil, using the same voltage as the single conductor coil. When the same total capacitor-stored energy that would be used to excite the single conductor coil is instead used to excite the dual conductor coil, the initial pulse of aggregate current through the dual conductor coil is greater than the initial pulse of current through the single conductor coil, resulting in a faster initial opening distance of the separable contacts during an opening stroke.
    Type: Grant
    Filed: October 28, 2022
    Date of Patent: December 17, 2024
    Assignee: EATON INTELLIGENT POWER LIMITED
    Inventors: Asish Das, Santhosh Kumar Chamarajanagar Govinda Nayaka, Robert Michael Slepian, Xin Zhou
  • Patent number: 12170179
    Abstract: Exemplary embodiments include a device for connecting and disconnecting a high-voltage circuit. The device includes a first main terminal and a second main terminal, a first intermediate terminal connected to the first main terminal by a first impedance, a first arc quenching chamber arranged between the first intermediate terminal and the first main terminal, a second intermediate terminal connected to the first intermediate terminal by a second impedance, the first intermediate terminal being connected in series between the first main terminal and the second intermediate terminal, a second arc quenching chamber arranged between the first intermediate terminal and the second intermediate terminal, and a mobile armature making it possible to connect, in the disconnection direction, the second main terminal on the one hand and, on the other hand and in succession, the first main terminal, the first intermediate terminal and the second intermediate terminal.
    Type: Grant
    Filed: September 27, 2022
    Date of Patent: December 17, 2024
    Assignee: Schneider Electric Industries SAS
    Inventor: Juan Carlos Perez Quesada
  • Patent number: 12170180
    Abstract: An arc quenching device for a three-phase electrical switchgear. The device includes a first busbar, a second busbar and a third busbar, each of a respective phase of the three-phase switchgear. The device also includes at least one piston of an electrically conductive material and having a tapered shape, tapering towards its front end. The device also includes only one pyrotechnical actuator arranged to, when the pyrotechnical actuator is fired, axially move each of the at least one piston until all of the first, second and third busbars are short-circuited to each other via the at least one piston.
    Type: Grant
    Filed: December 12, 2022
    Date of Patent: December 17, 2024
    Assignee: ABB Schweiz AG
    Inventors: James Mannekutla, Elisabeth Lindell, Ola Jeppsson
  • Patent number: 12170181
    Abstract: A pyrotechnic circuit breaker comprising: a casing, at least two connection terminals, an internal electrical circuit connecting the two connection terminals and formed for example by an electrical conductor, an opening member, which is movable and arranged to open a part to be opened of the internal electrical circuit when moving between an initial position and a final position, so as to form at least two discrete portions of conductor after opening, a pyrotechnic actuator arranged to move the opening member from the initial position to the final position, an inner chamber defined by an internal wall formed in the casing, and receiving the part to be opened, an insulating grease, arranged in the inner chamber, wherein the insulating grease is arranged on or covers at least two predetermined parts of the internal wall.
    Type: Grant
    Filed: July 1, 2021
    Date of Patent: December 17, 2024
    Assignee: Autoliv Development AB
    Inventors: Francois Gaudinat, Gildas Clech, Jean Champendal, Isaure Masquelier, Ludovic Lageat
  • Patent number: 12170182
    Abstract: The present disclosure relates generally to ion implantation, and more particularly, to systems and processes for adjusting a ribbon beam angle of an ion implantation system. An exemplary ion implantation system includes an ion source configured to generate a ribbon beam, a wafer chuck configured to hold a wafer during implantation by the ribbon beam, a dipole magnet disposed between the ion source and the wafer chuck, and a controller. The dipole magnet includes at least two coils configured to adjust a ribbon beam angle of the ribbon beam at one or more locations along a path of the ribbon beam between the ion source and the wafer held in the wafer chuck. The controller is configured to control the ion source, the wafer chuck, and the dipole magnet.
    Type: Grant
    Filed: July 2, 2021
    Date of Patent: December 17, 2024
    Assignee: Advanced Ion Beam Technology, Inc.
    Inventors: Zhimin Wan, Chi-ming Huang, Shao-Yu Hu
  • Patent number: 12170183
    Abstract: Provided is a method for adjusting a field-of-view of a charged particle microscope device, in which reference data for a sample is set, a plurality of regions of interest are set for the reference data, a rough sampling coordinate group is set for each of the plurality of regions of interest, the sample is irradiated with charged particles based on the sampling coordinate group to obtain a corresponding pixel value group, a plurality of reconstructed images corresponding to the plurality of regions of interest are generated based on the pixel value group, a correspondence relationship among the plurality of regions of interest is estimated based on the plurality of reconstructed images, and the plurality of regions of interest are adjusted based on the correspondence relationship. Here, the sampling coordinate group is set based on the reference data.
    Type: Grant
    Filed: September 20, 2019
    Date of Patent: December 17, 2024
    Assignee: Hitachi High-Tech Corporation
    Inventors: Mitsutoshi Kobayashi, Atsushi Miyamoto, Yoshinobu Hoshino
  • Patent number: 12170184
    Abstract: A transmission electron microscope capable of obtaining a hollow-cone dark-field image and visually displaying irradiation conditions thereof includes an irradiation unit for irradiating a specimen with an electron beam, an objective lens for causing the electron beam transmitted through the specimen to form an image, beam deflectors positioned higher than a position where the specimen is placed, an objective movable aperture for passing only a portion of the electron beam transmitted through the specimen, and a deflection coil control unit. The deflection coil control unit controls a deflection angle of the electron beam using the beam deflectors such that the specimen is irradiated with the electron beam at a predetermined angle with respect to an optical axis while the electron beam is moving in a precessional manner and only a diffracted wave and/or a scattered wave having a desired angle passes through the objective movable aperture.
    Type: Grant
    Filed: April 26, 2019
    Date of Patent: December 17, 2024
    Assignee: Hitachi High-Tech Corporation
    Inventors: Toshie Yaguchi, Keiji Tamura, Hiromi Mise, Yasuyuki Nodera, Akiko Wakui, Keisuke Igarashi
  • Patent number: 12170185
    Abstract: A plasma deposition apparatus includes a first plasma source that can produce a first plasma confined in a magnetic field, which includes: a gas distribution device configured to supply a gas, a closed-loop electrode defining a center region therein and a central axis through the central region and one or more magnets that are outside an inner surface of the closed-loop electrode. The one or more magnets can produce the magnetic field in the center region. The closed-loop electrode and the one or more magnets can produce the first plasma of activated atoms, molecules, electrons, and ions from the gas. A collimator can collimate the activated atoms, molecules, electrons, and ions produced by the first plasma source and direct the ions to a substrate.
    Type: Grant
    Filed: July 8, 2023
    Date of Patent: December 17, 2024
    Assignee: Ascentool, Inc.
    Inventor: George Xinsheng Guo
  • Patent number: 12170186
    Abstract: Methods and apparatus for substrate processing are described. In some embodiments a showerhead assembly includes a heated showerhead having a heater and a gas diffusion plate coupled to the heater, the gas diffusion plate having a plurality of channels extending through the gas diffusion plate; an ion filter spaced from the heated showerhead, the ion filter having a first side facing the heated showerhead and a second side opposite the first side, the ion filter having a plurality of channels extending through the ion filter; a heat transfer ring in contact between the heated showerhead and the ion filter, the heat transfer ring being thermally conductive and electrically insulative, the heat transfer ring comprised of a plurality of elements spaced from one another along an interface between the heated showerhead and the ion filter; and a remote plasma region defined between the heated showerhead and the ion filter.
    Type: Grant
    Filed: April 15, 2022
    Date of Patent: December 17, 2024
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Anantha K. Subramani, Seyyed Abdolreza Fazeli, Yang Guo, Chandrashekara Baginagere, Ramcharan Sundar, Yunho Kim, Rajasekhar Patibandla
  • Patent number: 12170187
    Abstract: A system includes: gas supply flow paths for supplying independently a main gas to a processing chamber; a flow rate control valve disposed in each gas supply flow path; an additive-gas flow path connected to the flow rate control valve; a valve for addition disposed in the additive-gas flow path; and a controller for controlling the flow rate control valve and the valve for addition to execute controls of: calculating flow rates of the main gas and an additive gas to be mixed with the main gas; calculating a total of the flow rates; calculating an internal pressure of each gas supply flow path with the total flow rate, and first and second relationships between previously acquired gas flow rates and gas pressures of the main gas and the additive gas, respectively; calculating an internal pressure ratio; and proportionally controlling openings of flow rate control valves based on the ratio.
    Type: Grant
    Filed: January 18, 2023
    Date of Patent: December 17, 2024
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Atsushi Sawachi
  • Patent number: 12170188
    Abstract: Disclosed herein are a substrate processing apparatus and an interlock method thereof, which can generate an interlock signal, when the temperature of each upper or lower electrode in a process chamber exceeds a range set by a user, thereby cutting off application of RF power to the substrate processing apparatus. According to the substrate processing apparatus and the interlock method thereof, in an emergency where the temperatures of the upper and lower electrodes, a difference therebetween, an inter-electrode distance, and the resistance value of each electrode are out of the respective ranges set by the user, an interlock signal and an alarm signal can be generated to cut off the application of RF power to the substrate processing apparatus. Thus, it is possible to protect equipment by preventing the equipment from being damaged by RF power and to maintain the uniformity of a thin film deposited on a substrate.
    Type: Grant
    Filed: June 11, 2020
    Date of Patent: December 17, 2024
    Assignee: JUSUNG ENGINEERING CO., LTD.
    Inventors: Sang Kyo Kwon, Jae Wan Lee
  • Patent number: 12170189
    Abstract: A coating apparatus includes a chamber body having a reaction chamber, a supporting rack, a monomer discharge source and a plasma generation source. The supporting rack has a supporting area for supporting the substrate. The monomer discharge source has a discharge inlet for introducing a coating forming material into the reaction chamber. The plasma generation source is arranged for exciting the coating forming material, wherein the supporting area of the supporting rack is located at a position between the monomer discharge source and the plasma generation source, so that the coating is evenly formed on the surface of the substrate, and the deposition velocity is increased.
    Type: Grant
    Filed: December 17, 2020
    Date of Patent: December 17, 2024
    Assignee: JIANGSU FAVORED NANOTECHNOLOGY CO., LTD.
    Inventor: Jian Zong
  • Patent number: 12170190
    Abstract: A wafer support table includes a ceramic base having a wafer placement surface and including an RF electrode and a heater electrode embedded, the RF electrode being closer to the wafer placement surface; a hole extending from a surface of the ceramic base opposite the wafer placement surface toward the RF electrode; and an RF rod through having a top end joined to the RF electrode or joined to a conductive member connected to the RF electrode, wherein the RF rod is a hybrid rod including a first rod member that is made of Ni and constitutes a portion of the RF rod from the top end to a predetermined position and a second rod member that is joined to the first rod member and constitutes a portion of the RF rod from the predetermined position to the base end and is made of a non-magnetic material.
    Type: Grant
    Filed: October 19, 2022
    Date of Patent: December 17, 2024
    Assignee: NGK INSULATORS, LTD.
    Inventors: Yutaka Unno, Tomohiro Hara
  • Patent number: 12170191
    Abstract: Provided is a substrate supporting apparatus with improved durability. The substrate supporting apparatus includes a body configured to support a substrate and formed of a dielectric substance; a heat transfer medium supply hole installed to penetrate the body; a first electrostatic electrode disposed in the body; and a second electrostatic electrode disposed in the body, located on the first electrostatic electrode, and electrically connected to the first electrostatic electrode.
    Type: Grant
    Filed: December 11, 2022
    Date of Patent: December 17, 2024
    Assignee: SEMES CO., LTD.
    Inventors: Jong Gun Lee, So Hyung Jiong, Hyung Joon Kim
  • Patent number: 12170192
    Abstract: Implementations of the present disclosure relate to systems for abating F-gases present in the effluent of semiconductor manufacturing processes. In one implementation, a system is provided that includes a water and oxygen delivery system. The water and oxygen delivery system includes a water vapor reagent source fluidly coupled with a chamber foreline via a first conduit; and an oxygen reagent source fluidly coupled with the chamber foreline via a second conduit fluidly coupled with the first conduit. The system further includes a plasma source fluidly coupled with the water and oxygen delivery system via the chamber foreline.
    Type: Grant
    Filed: July 27, 2020
    Date of Patent: December 17, 2024
    Assignee: Applied Materials, Inc.
    Inventor: Colin John Dickinson
  • Patent number: 12170193
    Abstract: A temperature estimation apparatus includes an estimation unit configured to successively estimate temperature data by successively inputting given time series process data relating to conditions inside a processing space in which plasma processing is performed, into a time series model generated in advance that correlates data values, in each time period, of time series process data relating to conditions inside the processing space, with a data value, at a respective time point, of time series temperature data measured inside the processing space.
    Type: Grant
    Filed: August 26, 2021
    Date of Patent: December 17, 2024
    Assignee: Tokyo Electron Limited
    Inventors: Yuki Kataoka, Hiroshi Nagahata
  • Patent number: 12170194
    Abstract: A magnetron plasma sputtering arrangement including an evacuable chamber, wherein in the evacuable chamber a tuning electrode, operatively connected to a biasing source with respect to ground, and including an aperture defining at least one axis of length, is arranged in a flow path for plasma between a sputtering head and a substrate. A plasma sputtered material originating at a sputtering target will traverse the aperture before depositing onto the surface of the substrate as a thin film.
    Type: Grant
    Filed: September 17, 2020
    Date of Patent: December 17, 2024
    Assignee: DANMARKS TEKNISKE UNIVERSITET
    Inventor: Eugen Stamate
  • Patent number: 12170195
    Abstract: A method includes performing a first post Chemical Mechanical Polish (CMP) cleaning on a wafer using a first brush. The first brush rotates to clean the wafer. The method further includes performing a second post-CMP cleaning on the wafer using a second brush. The second brush rotates to clean the wafer. The first post-CMP cleaning and the second post-CMP cleaning are performed simultaneously.
    Type: Grant
    Filed: July 10, 2023
    Date of Patent: December 17, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Fu-Ming Huang, Liang-Guang Chen, Ting-Kui Chang, Chun-Chieh Lin
  • Patent number: 12170196
    Abstract: Embodiments of the present disclosure generally relate to methods and systems for cleaning a surface of a substrate. In an embodiment, a method of processing a substrate is provided. The method includes introducing a substrate to a processing volume of a processing chamber by positioning the substrate on a substrate support. The method further includes flowing a first process gas into the processing volume, the first process gas comprising HF, flowing a second process gas into the processing volume, the second process gas comprising pyridine, pyrrole, aniline, or a combination thereof, and exposing the substrate to the first process gas and the second process gas to remove oxide from the substrate under oxide removal conditions. In another embodiment, a system is provided that includes a processing chamber to process a substrate, and a controller to cause a processing method to be performed in the processing chamber.
    Type: Grant
    Filed: January 26, 2023
    Date of Patent: December 17, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Schubert S. Chu, Errol Antonio C. Sanchez
  • Patent number: 12170197
    Abstract: Methods for selective deposition, and structures thereof, are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. A passivation layer is selectively formed from vapor phase reactants on the first surface while leaving the second surface without the passivation layer. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the passivation layer. The first surface can be metallic while the second surface is dielectric, or the second surface is dielectric while the second surface is metallic. Accordingly, material, such as a dielectric, can be selectively deposited on either metallic or dielectric surfaces relative to the other type of surface using techniques described herein. Techniques and resultant structures are also disclosed for control of positioning and shape of layer edges relative to boundaries between underlying disparate materials.
    Type: Grant
    Filed: July 29, 2021
    Date of Patent: December 17, 2024
    Assignee: ASM IP Holding B.V.
    Inventors: Eva E. Tois, Suvi P. Haukka, Raija H. Matero, Elina Färm, Delphine Longrie, Hidemi Suemori, Jan Willem Maes, Marko Tuominen, Shaoren Deng, Ivo Johannes Raaijmakers, Andrea Illiberi
  • Patent number: 12170198
    Abstract: A deposition method of depositing a silicon nitride film on a surface of a substrate includes: (a) exposing the substrate to a plasma formed from a nitriding gas containing nitrogen (N) and hydrogen (H); (b) exposing the substrate to a plasma formed from hydrogen (H2) gas; (c) exposing the substrate to a plasma formed from a process gas containing a halogen; (d) supplying trisilylamine (TSA) to the substrate; and (e) repeating (a) to (d) in this order.
    Type: Grant
    Filed: November 29, 2021
    Date of Patent: December 17, 2024
    Assignee: Tokyo Electron Limited
    Inventors: Hiroyuki Matsuura, Jinseok Kim
  • Patent number: 12170199
    Abstract: The present disclosure is generally related to semiconductor devices, and more particularly to a dielectric material formed in semiconductor devices. The present disclosure provides methods for forming a dielectric material layer by a cyclic spin-on coating process. In an embodiment, a method of forming a dielectric material on a substrate includes spin-coating a first portion of a dielectric material on a substrate, curing the first portion of the dielectric material on the substrate, spin-coating a second portion of the dielectric material on the substrate, and thermal annealing the dielectric material to form an annealed dielectric material on the substrate.
    Type: Grant
    Filed: July 31, 2023
    Date of Patent: December 17, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Je-Ming Kuo, Yen-Chun Huang, Chih-Tang Peng, Tien-I Bao
  • Patent number: 12170200
    Abstract: A crystal growth method of the present disclosure includes: preparing a crystal growth-derived-layer forming substrate including (a) a substrate having a surface layer, (b) a mask pattern which is formed on the surface layer and which includes a plurality of strip bodies, and (c) a plurality of crystal growth-derived layers which are formed between and on the plurality of stripe bodies so as to have gaps therebetween above the plurality of strip bodies and which differ in lattice constant from the substrate having the surface layer; and growing semiconductor layers on the plurality of crystal growth-derived layers. The semiconductor layers are respectively grown on the plurality of crystal growth-derived layers formed so as to be separated from each other, and semiconductor layers on two adjacent ones of the plurality of crystal growth-derived layers are separated from each other.
    Type: Grant
    Filed: December 30, 2021
    Date of Patent: December 17, 2024
    Assignee: KYOCERA Corporation
    Inventors: Takehiro Nishimura, Chiaki Doumoto
  • Patent number: 12170201
    Abstract: A method for preparing a semiconductor structure, and a semiconductor structure are provided. In a prepared first pattern structure, a thickness of a first insulating layer is equal to a thickness of a second insulating layer, and a thickness of a third insulating layer is equal to a thickness of a fourth insulating layer.
    Type: Grant
    Filed: September 30, 2021
    Date of Patent: December 17, 2024
    Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
    Inventors: Qiang Wan, Tao Liu, Sen Li
  • Patent number: 12170202
    Abstract: The present disclosure relates to a semiconductor device and a manufacturing method of fabricating a semiconductor structure. The method includes forming an opening in a substrate and depositing a conformal metal layer in the opening. The depositing includes performing one or more deposition cycles. The deposition includes flowing a first precursor into a deposition chamber and purging the deposition chamber to remove at least a portion of the first precursor. The method also includes flowing a second precursor into the deposition chamber to form a sublayer of the conformal metal layer and purging the deposition chamber to remove at least a portion of the second precursor. The method further includes performing a metallic halide etching (MHE) process that includes flowing a third precursor into the deposition chamber.
    Type: Grant
    Filed: January 2, 2023
    Date of Patent: December 17, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Po-Yu Lin, Chi-Yu Chou, Hsien-Ming Lee, Huai-Tei Yang, Chun-Chieh Wang, Yueh-Ching Pai, Chi-Jen Yang, Tsung-Ta Tang, Yi-Ting Wang
  • Patent number: 12170203
    Abstract: An integrated circuit includes a first nanostructure transistor having a first gate electrode and a second nanostructure transistor having a second gate electrode. A dielectric isolation structure is between the first and second gate electrodes. A gate connection metal is on a portion of the top surface of the first gate electrode and on a portion of a top surface of the second gate electrode. The gate connection metal is patterned to expose other portions of the top surfaces of the first and second gate electrodes adjacent to the dielectric isolation structure. A conductive via contacts the exposed portion of the top surface of the second gate electrode.
    Type: Grant
    Filed: January 21, 2022
    Date of Patent: December 17, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Jia-Chuan You, Chia-Hao Chang, Chu-Yuan Hsu, Kuo-Cheng Chiang, Chih-Hao Wang
  • Patent number: 12170205
    Abstract: Embodiments of the present disclosure relates to method of forming trench and via features using dielectric and metal mask layers. Particularly, embodiments of present disclosure provide a hard mask stack including a first dielectric mask layer, and second dielectric mask layer and a metal mask layer, wherein the first dielectric mask layer and second dielectric mask layer have a high etch selectivity.
    Type: Grant
    Filed: August 12, 2021
    Date of Patent: December 17, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventor: Yi-Nien Su
  • Patent number: 12170206
    Abstract: A film having film continuity can be formed. There is provided a technique including: preparing a substrate having a metal-containing film formed on a surface thereof; and slimming the metal-containing film by pulse-supplying a halogen-containing gas to the substrate.
    Type: Grant
    Filed: March 18, 2022
    Date of Patent: December 17, 2024
    Assignee: Kokusai Electric Corporation
    Inventors: Arito Ogawa, Norikazu Mizuno, Atsuhiko Ashitani, Atsuro Seino, Kota Kowa