Abstract: Copper precursors useful for depositing copper or copper-containing films on substrates, e.g., microelectronic device substrates or other surfaces. The precursors includes copper compounds of various classes, including copper borohydrides, copper compounds with cyclopentadienyl-type ligands, copper compounds with cyclopentadienyl-type and isocyanide ligands, and stabilized copper hydrides. The precursors can be utilized in solid or liquid forms that are volatilized to form precursor vapor for contacting with the substrate, to form deposited copper by techniques such as chemical vapor deposition (CVD), atomic layer deposition (ALD) or rapid vapor deposition (digital CVD).

Abstract: An aqueous acidic copper electroplating composition containing an improved additive system for use at elevated temperatures. The improved additive system comprises (a) a suppressor comprising at least one high molecular weight polymer; (b) a brightener comprising at least one divalent sulfur compound; and (c) a leveler comprising a heterocyclic nitrogen compound. The improved electroplating composition is usable for plating through holes in printed circuit boards.

Abstract: Compositions and methods for forming metal films on semiconductor substrates are disclosed. One of the disclosed methods comprises: heating the semiconductor substrate to obtain a heated semiconductor substrate; exposing the heated semiconductor substrate to a composition containing at least one metal precursor comprising at least one ligand, an excess amount of neutral labile ligands, a supercritical solvent, and optionally at least one source of B, C, N, Si, P, and mixtures thereof; exposing the composition to a reducing agent and/or thermal energy at or near the heated semiconductor substrate; disassociating the at least one ligand from the metal precursor; and forming the metal film while minimizing formation of metal oxides.

Abstract: The invention is directed to a solution and process for improving the solderability of a metal surface. In one embodiment, the invention is a silver deposit solution comprising an acid, a source of silver ions, and an additive selected from among pyrroles, triazoles, and tetrazoles, as well as derivatives and mixtures of those components. In another embodiment, the silver deposit solution also includes a 6-membered heterocyclic ring compound, wherein three members of the 6-membered heterocyclic ring are nitrogen atoms. Still another embodiment is a process for improving the solderability of a metal surface which involves applying a silver deposit solution as previously described to a metal surface.

Abstract: This invention is directed to a process for electrolessly metallizing an article, as well as to a plating bath and the subsequent plated substrate. The process comprises contacting the surface of an article with an electroless metallizing bath which may be essentially free of toxic and/or heavy metals.

Abstract: The present invention is directed to a process for manufacturing multilayer printed circuit boards which is capable of simultaneous via hole filling and formation of conductor circuit and via holes of good crystallinity, and by which uniform deposition can be constructed on a substrate and high-density wiring and highly reliable conductor connections can be realized without annealing.

Abstract: A non-aqueous electroless copper plating solution that includes an anhydrous copper salt component, an anhydrous cobalt salt component, a non-aqueous complexing agent, and a non-aqueous solvent is provided.

Abstract: Electroless copper and copper alloys plating baths are disclosed. The electroless baths are formaldehyde free and are environmentally friendly. The electroless baths are stable and deposit a bright or copper alloy on substrates.

Abstract: It is an object to provide a novel material that can quickly form metal silver even at a low temperature of approximately 210° C. or less. This serves as a metal silver forming material that includes a silver ?-ketocarboxylate. By heating this forming material, it is possible to form metal silver quickly even at a low temperature of approximately 210° C. or less. Examples of the silver ?-ketocarboxylate include silver isobutyrylacetate, silver benzoylacetate, silver acetoacetate, silver propionylacetate, silver ?-methylacetoacetate, and silver ?-ethylacetoacetate.

Abstract: Copper (I) amidinate and copper (I) guanidinate precursors for forming copper thin films in the manufacture of microelectronic device articles, e.g., using chemical vapor deposition, atomic layer deposition, and rapid vapor deposition processes, as well as mixed ligand copper complexes suitable for such processes. Also described are solvent/additive compositions for copper precursors for CVD/ALD of copper metal films, which are highly advantageous for liquid delivery of such copper amidinates and copper guanidinates, as well as for other organocopper precursor compounds and complexes, e.g., copper isoureate complexes.

Abstract: An electroless gold plating solution that can form a gold plating film with excellent adhesion and that does not cause corrosion of a base metal film such as nickel, copper, cobalt, or palladium, or the like.

Abstract: Copper (I) amidinate precursors for forming copper thin films in the manufacture of semiconductor devices, and a method of depositing the copper (I) amidinate precursors on substrates using chemical vapor deposition or atomic layer deposition processes.

Abstract: Electroless copper plating baths are disclosed. The electroless copper baths are formaldehyde free and are environmentally friendly. The electroless copper baths are stable and deposit a bright copper deposit on substrates.

Abstract: A copper plating solution according to the present invention is characterized by that it comprising 0.03 mol/L to 0.5 mol/L of copper sulfate, 0.05 mol/L to 0.7 mol/L of ethylenediaminetetraacetic acid and 0.02 mol/L to 0.3 mol/L of sulfite, and has a pH adjusted to 5.0 to 8.5. A method for copper plating according to the present invention is characterized by that it comprises using the copper plating solution above. The copper plating solution and the method for copper plating according to the present invention stably provide a uniform copper plating film excellent in adhesion on the surface of an article to be plated, such as rare earth metal-based permanent magnet.

Abstract: Plating baths containing a mixture of leveling agents, where the mixture includes a first level agent having a first diffusion coefficient and a second leveling agent having a second diffusion coefficient, are provided. Such plating baths deposit a metal layer, particularly a copper layer, that is substantially planar across a range of electrolyte concentrations. Methods of depositing metal layers using such plating baths are also disclosed. These baths and methods are useful for providing a planar layer of copper on a substrate having small apertures, such as an electronic device.

Abstract: Electroless copper and copper alloy plating baths are disclosed. The electroless baths are formaldehyde free and are environmentally friendly. The electroless baths are stable and deposit a bright copper or copper alloy on substrates.

Abstract: This invention is directed to a process for electrolessly metallizing an article, as well as to a plating bath and the subsequent plated substrate. The process comprises contacting the surface of an article with an electroless metallizing bath which may be essentially free of toxic and/or heavy metals.

Abstract: Disclosed herein is an electroless copper plating solution, including a copper salt, a completing agent, a reductant and a pH adjuster, in which the plating solution includes a 2,2-dipyridyl acid solution and the hydrogen ion concentration (pH) thereof is about 11.5 to about 13.0, a method of producing the same, and an electroless copper plating method. According to the plating solution of the present invention, an electroless copper plating film having stable and improved adhesivity and low electrical resistance can be obtained. Further, display devices including a metal pattern formed with the electroless copper plating solution can improve the reliability and price competitiveness of products prepared therefrom.

Abstract: Compositions and methods for depositing gold alloys are disclosed. The compositions include certain dithiocarboxylic acids, salts and esters thereof and mercapto group containing compounds which provide bright gold alloy deposits with uniform color.

Abstract: Copper precursors useful for depositing copper or copper-containing films on substrates, e.g., microelectronic device substrates or other surfaces. The precursors includes copper compounds of various classes, including copper borohydrides, copper compounds with cyclopentadienyl-type ligands, copper compounds with cyclopentadienyl-type and isocyanide ligands, and stabilized copper hydrides. The precursors can be utilized in solid or liquid forms that are volatilized to form precursor vapor for contacting with the substrate, to form deposited copper by techniques such as chemical vapor deposition (CVD), atomic layer deposition (ALD) or rapid vapor deposition (digital CVD).

Abstract: There is provided a cyanide-free immersion type electroless gold plating liquid that is low in toxicity, can be used near a neutral ph, and has a good solder adhesion and plating film adhesion. The electroless gold plating liquid contains a cyanide-free water-soluble gold compound and a pyrosulfurous acid compound. The plating liquid may further contain a sulfurous acid compound and an aminocarboxylic acid compound. Pyrosulfurous acid or an alkali metal, alkaline earth metal, ammonium, or another such salt thereof can be used as the pyrosulfurous acid compound.

Abstract: An objective is to provide plate making printing exhibit conductivity and flexibility with respect to a flexible substrate, and to provide a method of forming metal patterns via non-plate making printing, and a metal salt mixture usable for the method. Also disclosed is a method of forming a metal pattern possessing the steps of conducting patterning on a substrate with a metal salt mixture for the metal pattern formation possessing a metal salt and a reducing agent, and having a viscosity of 3-50 mPa·s at 25 ° C., and forming the metal pattern via heating to a temperature of 80-400° C.

Abstract: A silver electroplating solution containing a cyanide as a silver source, said silver electroplating solution characterized by containing at least one type of compound of As, Tl, Se, and Te as a brightener and a brightness adjuster having a benzothiazole skeleton or benzoxazole skeleton. This plating solution utilizes the high speed property of gloss agents to the maximum, does not have an effect on the current density, gives stable non- or semi-gloss plating appearance, and facilitates control.

Abstract: The invention provides a displacement electroless gold plating solution that is low in toxicity, can be used at a pH near to neutrality, and affords good solder adhesion and film adhesion. The displacement electroless gold plating solution contains a non-cyanide water-soluble gold compound and a hydrogensulfite compound. Preferably, the plating solution further contains a thiosulfuric acid compound or an aminocarboxylic acid compound. Sodium hydrogensulfite, potassium hydrogensulfite, ammonium hydrogensulfite or the like can be used as the hydrogensulfite compound.

Abstract: A cyanide-free immersion type electroless gold plating solution that is less toxic can be used at near neutrality and gives an excellent and improved solder adhesion and plated film adhesion is provided. The electroless gold plating solution contains a cyanide-free water-soluble gold compound, a pyrosulfurous acid compound and a thiosulfuric acid compound. This plating solution preferably further contains a sulfurous acid compound and an aminocarboxylic acid compound. Pyrosulfurous acid and alkali metal salts, alkaline-earth metal salts, ammonium salts and other salts thereof can be used as the pyrosulfurous acid compound.

Abstract: The non-cyanide electroless gold plating solution according to the invention is a non-cyanide electroless gold plating solution free from a cyanide compound, wherein bis-(3-sulfopropyl)disulfide is added, as a complexing agent for gold stabilization, to the electroless gold plating solution.

Abstract: Copper (I) amidinate precursors for forming copper thin films in the manufacture of semiconductor devices, and a method of depositing the copper (I) amidinate precursors on substrates using chemical vapor deposition or atomic layer deposition processes.

Abstract: An additive for copper plating comprising, as an effective ingredient, a nitrogen-containing biphenyl derivative represented by the following formula (I): [wherein X represents a group selected from the following groups (II)-(VII): and Y represents a lower alkyl group, lower alkoxy group, nitro group, amino group, sulfonyl group, cyano group, carbonyl group, 1-pyridyl group, or the formula (VIII): (wherein R? represents a lower alkyl group)], a copper plating solution formed by adding the additive for copper plating to a copper plating solution containing a copper ion ingredient and an anion ingredient, and a method of manufacturing on an electronic circuit substrate having a fine copper wiring circuit, which comprises electroplating in the copper plating solution using as the cathode an electronic circuit substrate in which fine microholes or microgrooves in the shape of an electronic circuit are formed on the surface.

Abstract: A metalorganic complex composition comprising a metalorganic complex selected from the group consisting of: metalorganic complexes comprising one or more metal central atoms coordinated to one or more monodentate or multidentate organic ligands, and complexed with one or more complexing monodentate or multidentate ligands containing one or more atoms independently selected from the group consisting of atoms of the elements C, N, H, S, O and F; wherein when the number of metal atoms is one and concurrently the number of complexing monodentate or multidentate ligands is one, then the complexing monodentate or multidentate ligand of the metalorganic complex is selected from the group consisting of beta-ketoiminates, beta-diiminates, C2-C10 alkenyl, C2-C15 cycloalkenyl and C6-C10 aryl.

Abstract: An electroless copper plating solution is disclosed herein. The solution includes an aqueous copper salt component, an aqueous cobalt salt component, a triamine based complexing agent, and an acidic pH-modifying substance in an amount sufficient to make the electroless copper plating solution acidic. A method of preparing an electroless copper solution is also provided.

Abstract: The object is to provide an electroless gold plating liquid which has an adequate deposition speed for practical use without containing any thallium or other heavy metal ions, excellent stability of the plating liquid and contains a non-cyanide gold salt as a gold salt, an alkali metal salt or an ammonium salt of sulfurous acid and thiosulfuric acid as a metal complexing agent, a hydroxyalkylsulfonic acid or a salt thereof represented by the following general formula as a reducing agent, and an amine compound, wherein R represents hydrogen, a carboxyl group, or any of a phenyl group, a tolyl group, a naphthyl group, a saturated or unsaturated alkyl group, an acetyl group, an acetonyl group, a pyridyl group and a furyl group which may have a substitutional group, X represents any of hydrogen, Na, K, and NH4, and n is an integer between 0 and 4.

Abstract: An electroless copper plating solution is disclosed herein. The solution includes an aqueous copper salt component, an aqueous cobalt salt component, a polyamine-based complexing agent, a chemical brightener component, a halide component, and a pH-modifying substance in an amount sufficient to make the electroless copper plating solution acidic. A method of preparing an electroless copper solution is also provided.

Abstract: The invention relates to an aqueous concentrate which is stable with respect to freezing and defrosting and which contains at least one water-soluble or water-dispersible copper compound and, optionally, also a water-soluble or water-dispersible tin compound for use in a diluted state as a bath for the currentless copper plating or bronze plating of objects, especially metal objects such as iron or steel wires, characterized in that it contains at least one complexed water-soluble or water-dispersed copper compound. The invention also relates to an aqueous bath which contains at least one aqueous or water-dispersible copper compound and, optionally, a water-soluble or water-dispersible tin compound for the currentless copper plating of objects in addition to at least one brightening agent and which has an adjusted pH value of less than 2.5. The invention also relates to a method for currentless copper plating or bronze plating of an object, especially a metallic object.

Abstract: The non-cyanide electroless gold plating solution according to the invention is a non-cyanide electroless gold plating solution free from a cyanide compound, wherein bis-(3-sulfopropyl)disulfide is added, as a complexing agent for gold stabilization, to the electroless gold plating solution.

Abstract: The present invention provides a non-cyanide electroless gold plating solution free from a cyanide compound, comprising, as a completing agent of gold, a compound represented by the formula shown below or a salt thereof: X—(CH2)n—SH wherein n is 2 or 3 and X is SO3H or NH2, and having a pH value of 7 or less. The invention also provides a process for electroless gold plating using the non-cyanide electroless gold plating solution.

Abstract: Electroless gold plating compositions that include an adhesion enhancer compound and a reduction accelerator are provided to obtain direct electroless gold plating over a gold, nickel or nickel alloy deposit. A method of electroless gold plating on a nickel-containing substrate is also disclosed.

Abstract: Copper (I) amidinate precursors for forming copper thin films in the manufacture of semiconductor devices, and a method of depositing the copper (I) amidinate precursors on substrates using chemical vapor deposition or atomic layer deposition processes.

Abstract: An electroless plating bath for filling high aspect ratio features with copper metal comprises water, a water soluble copper containing compound having an initial concentration of 0.5 to 50 g/L, a catalyst reducing agent having an initial concentration of 0.02 to 1.5 g/L, a bulk reducing agent having an initial concentration of 2.37 to 29.7 g/L, a buffering agent having an initial concentration of 25 to 100 g/L, a grain refining additive having an initial concentration of 0.25 to 5.0 g/L, a bath stabilizing agent having an initial concentration of 0.02 to 0.1 g/L, and a rate controlling additive having an initial concentration of 0.01 to 0.5 g/L. The catalyst reducing agent may comprise glyoxylic acid and the bulk reducing agent may comprise glycolic acid or hypophosphite.

Abstract: An electrolytic copper plating bath used for via-filling plating of blind via-holes formed on a substrate, containing a water-soluble copper salt, sulfuric acid, chloride ions, and a leveler as an additive, wherein the leveler is either one or both of a quaternary polyvinylimidazolium compound represented by the following formula (1) and a copolymer, represented by the following formula (2), of vinylpyrrolidone and a quaternary vinylimidazolium compound: where R1 and R2 are each an alkyl group, m is an integer of not less than 2, and p and q are each an integer of not less than 1, and a copper electroplating method for via-filling plating of blind via-holes formed on a substrate by use of the electrolytic copper plating bath.

Abstract: Materials and methods are described for electroless deposition of copper molybdenum. An aqueous bath composition for the electroless deposition of copper molybdenum includes; a soluble source of copper ions, a soluble source of molybdenum ions, and a reducing agent comprising boron, wherein the composition is adapted to electrolessly produce a copper molybdenum deposit.

Abstract: An electroless copper plating solution using glyoxylic acid as a reducing agent, which is small in the reacting quantity of Cannizzaro reaction, does not largely cause precipitation of the salt accumulated in the electroless copper plating solution by the plating reaction and Cannizzaro reaction, and can be used stably over a long period of time. The electroless copper plating solution comprises copper ion, a complexing agent for copper ion, a reducing agent for copper ion and a pH adjusting agent, wherein the reducing agent for copper ion is glyoxylic acid or a salt thereof, the pH adjusting agent is potassium hydroxide and the electroless copper plating solution contains at least one member selected from metasilicic acid, metasilicic acid salt, germanium dioxide, germanic acid salt, phosphoric acid, phosphoric acid salt, vanadic acid, vanadic acid salt, stannic acid and stannic acid salt in an amount of 0.0001 mol/L or more.

Abstract: Copper (I) amidinate precursors for forming copper thin films in the manufacture of semiconductor devices, and a method of depositing the copper (I) amidinate precursors on substrates using chemical vapor deposition or atomic layer deposition processes.

Abstract: The invention relates to a pyrophosphoric acid bath for use in cyanogen-free copper-tin alloy plating that contains an additive (A) composed an amine derivative, an epihalohydrin and a glycidyl ether compound with ratios of epihalohydrin to glycidyl ether compound being 0.5–2 to 0.1–5 on mol basis, per 1 mol of the amine derivative, has a pH of 3 to 9, and optionally contains an additive (B) composed of an organic sulfonic acid and/or an organic sulfonic acid salt, and to a copper-tin alloy coating obtainable by using the bath. The invention provides a pyrophosphoric acid bath for use in copper-tin alloy plating of the cyanogen-free type utilizable on an industrial scale, particularly, capable of performing uniform treatment to exhibit low defective product generation rates even with the current density being incessantly changing between a high state and a low state, as a barrel plating method, and a copper-tin alloy coating obtainable by using the bath.

Abstract: The present invention provides plating solutions having either copper bis(perfluoroalkanesulfonyl) imides or copper tris(perfluoroalkanesulfonyl) methides and methods of electrochemically or chemically depositing copper interconnects using these plating solutions.

Abstract: It is an object of the present invention to obtain a low-profile electrolytic copper foil with a small surface roughness on the side of the rough surface (the opposite side from the lustrous surface) in the manufacture of an electrolytic copper foil using a cathode drum, and more particularly to obtain an electrolytic copper foil which allows fine patterning, and which is superior in terms of elongation and tensile strength at ordinary temperatures and high temperatures. Furthermore, it is an object of the present invention to obtain a copper electrolytic solution for this purpose. This copper electrolytic solution contains as additives an organo-sulfur compound and a quaternary amine compound with a specific skeleton.

Abstract: Compounds that function to provide level or uniform metal deposits are provided. These compounds are particularly useful in providing level copper deposits. Copper plating baths and methods of copper plating using these compounds are also provided. These baths and methods are useful for providing a planarized layer of copper on a substrate having small apertures. The compositions and methods provide complete fill of small apertures with reduced void formation.

Abstract: A tin-silver electrolyte and methods of depositing tin-silver alloys on a substrate.

Abstract: A composition for electrodeposition of a metal on a work piece, which electrodeposition is conducted at an electrodeposition temperature, is provided. The composition comprises a metal salt, a polymer suppressor having a cloud point, an accelerator and an electrolyte. If the cloud point is greater than the electrodeposition temperature, an anion is also present in an amount sufficient to lower the cloud point of the polymer suppressor to a temperature approximately no greater than the electrodeposition temperature.

Abstract: The object of this invention is to provide an organometallic precursor for forming a metal film or pattern and a method of forming the metal film or pattern using the same. More particularly, the present invention provides an organometallic precursor containing a hydrazine-based compound coordinated with a central metal thereof, and a method of forming a metal film or pattern using the same. Further, the present invention provides a composition containing an organometallic compound and a hydrazine-based compound, and a method of forming a metal film or pattern using the same. Additionally, the present invention is advantageous in that a pure metal film or pattern is formed using the organometallic precursor or composition through a simple procedure without limiting atmospheric conditions at a low temperature, and the film or pattern thus formed has excellent conductivity and morphology. Therefore, the film is useful in an electronic device field including flexible displays and large-sized TFT-LCD.

Abstract: In the production of printed circuit boards it is required that organic protective coatings adhere tightly on the copper surfaces. Accordingly, matt layers of copper are to be preferred over lustrous coatings. The bath in accordance with the invention serves to deposit matt layers of copper and has the additional advantageous property that the layers may also be deposited with sufficient coating thickness in very narrow bore holes at average cathode current density. For this purpose the bath contains at least one polyglycerin compound selected from the group comprising poly(1,2,3-propantriol), poly(2,3-epoxy-1-propanol) and derivatives thereof.