Using Temperature Gradient (e.g., Moving Zone Recrystallization) Patents (Class 117/10)
  • Patent number: 9970126
    Abstract: Herein is provided a growth structure for forming a free-standing layer of crystalline material having at least one crystallographic symmetry. The growth structure includes a host substrate and a separation layer disposed on the host substrate for growth of a layer of the crystalline material thereon. The separation layer has a separation layer thickness, and is mechanically weaker than the host substrate and the crystalline material. An array of apertures is in the separation layer, each aperture extending through the separation layer thickness.
    Type: Grant
    Filed: February 20, 2014
    Date of Patent: May 15, 2018
    Assignee: Massachusetts Institute of Technology
    Inventor: Richard J. Molnar
  • Patent number: 9941371
    Abstract: A complementary metal-oxide semiconductor (CMOS) device and a method of fabricating a CMOS device are described. The method includes forming an interfacial layer in a trench on a substrate in both a p-channel field effect transistor (pFET) area of the CMOS device and an n-channel FET (nFET) area of the CMOS device, depositing a high-k dielectric on the interfacial layer in both the pFET area and the nFET area, selectively forming a first metal layer on the high-k dielectric in only the pFET area, and depositing a second metal layer on the first metal layer in the pFET area and on the high-k dielectric in the nFET area. The method also includes performing an anneal that increases a thickness of the interfacial layer in only the pFET area.
    Type: Grant
    Filed: August 1, 2016
    Date of Patent: April 10, 2018
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Takashi Ando, Hemanth Jagannathan, Barry P. Linder
  • Patent number: 9768056
    Abstract: A method of preparing a single crystal semiconductor handle wafer in the manufacture of a silicon-on-insulator device is provided. The method comprises forming a multilayer of passivated semiconductors layers on a dielectric layer of a high resistivity single crystal semiconductor handle wafer. The method additionally comprises forming a semiconductor oxide layer on the multilayer of passivated semiconductor layers. The multilayer of passivated semiconductor layers comprise materials suitable for use as charge trapping layers between a high resistivity substrate and a buried oxide layer in a semiconductor on insulator structure.
    Type: Grant
    Filed: October 27, 2014
    Date of Patent: September 19, 2017
    Assignee: SunEdison Semiconductor Limited (UEN201334164H)
    Inventors: Igor Peidous, Illaria Katia Marianna Pellicano
  • Patent number: 9691619
    Abstract: A laser annealing device of the present invention includes a stage on which a heating object is placed, a first laser element which emits first continuous laser light, a first optical system which leads the first continuous laser light to the heating object to form a first application region on the heating object, a second laser element which emits second continuous laser light having a wavelength shorter than that of the first continuous laser light, a second optical system which leads the second continuous laser light to the heating object to form a second application region on the heating object, and a system controller which executes scanning with the first application region and the second application region so that each portion of the heating object is scanned with at least part of the first application region before being scanned with the second application region.
    Type: Grant
    Filed: March 7, 2013
    Date of Patent: June 27, 2017
    Assignee: Mitsubishi Electric Corporation
    Inventors: Kazunori Kanada, Tadaharu Minato, Yusuke Kawase
  • Patent number: 9508932
    Abstract: A laser crystallization system, including an output unit configured to generate output laser light, an optical unit configured to split the output laser light into a first laser light and a second laser light, and to process the first laser light to have a crystallization energy density, a moving unit configured to move a target object to be irradiated with the first laser light and the second laser light, a detection unit configured to detect surface information of the target object utilizing the second laser light, and an input unit configured to receive the detected surface information and to transmit a control signal to the output unit and the moving unit, wherein the laser crystallization system is configured to detect the surface information of the target object and to crystallize the target object utilizing only the output laser light.
    Type: Grant
    Filed: March 13, 2015
    Date of Patent: November 29, 2016
    Assignee: Samsung Display Co., Ltd.
    Inventors: Sang Hyun Jeon, Eun Jeong Cho
  • Patent number: 9496183
    Abstract: A complementary metal-oxide semiconductor (CMOS) device and a method of fabricating a CMOS device are described. The method includes forming an interfacial layer in a trench on a substrate in both a p-channel field effect transistor (pFET) area of the CMOS device and an n-channel FET (nFET) area of the CMOS device, depositing a high-k dielectric on the interfacial layer in both the pFET area and the nFET area, selectively forming a first metal layer on the high-k dielectric in only the pFET area, and depositing a second metal layer on the first metal layer in the pFET area and on the high-k dielectric in the nFET area. The method also includes performing an anneal that increases a thickness of the interfacial layer in only the pFET area.
    Type: Grant
    Filed: May 7, 2015
    Date of Patent: November 15, 2016
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Takashi Ando, Hemanth Jagannathan, Barry P. Linder
  • Patent number: 8871022
    Abstract: The disclosed subject matter relates to the use of laser crystallization of thin films to create epitaxially textured crystalline thick films. In one or more embodiments, a method for preparing a thick crystalline film includes providing a film for crystallization on a substrate, wherein at least a portion of the substrate is substantially transparent to laser irradiation, said film including a seed layer having a predominant surface crystallographic orientation; and a top layer disposed above the seed layer; irradiating the film from the back side of the substrate using a pulsed laser to melt a first portion of the top layer at an interface with the seed layer while a second portion of the top layer remains solid; and re-solidifying the first portion of the top layer to form a crystalline laser epitaxial with the seed layer thereby releasing heat to melt an adjacent portion of the top layer.
    Type: Grant
    Filed: October 14, 2013
    Date of Patent: October 28, 2014
    Assignee: The Trustees of Columbia University in the City of New York
    Inventor: James S. Im
  • Patent number: 8715412
    Abstract: Systems for processing thin films having variable thickness are provided. A crystalline film includes a first crystalline region having a first film thickness and a first crystalline grain structure; and a second crystalline region having a second film thickness and a second crystalline grain structure. The first film thickness is greater than the second film thickness and the first and second film thicknesses are selected to provide a crystalline region having the degree and orientation of crystallization that is desired for a device component.
    Type: Grant
    Filed: January 14, 2013
    Date of Patent: May 6, 2014
    Assignee: The Trustees of Columbia University in the City of New York
    Inventor: James S. Im
  • Patent number: 8696808
    Abstract: Each region, which should be left on a substrate after patterning, of a semiconductor film is grasped in accordance with a mask. Then, each region to be scanned with laser light is determined so that at least the region to be obtained through the patterning is crystallized, and a beam spot is made to hit the region to be scanned, thereby partially crystallizing the semiconductor film. Each portion with low output energy of the beam spot is shielded by a slit. In the present invention, the laser light is not scanned and irradiated onto the entire surface of the semiconductor film but is scanned such that at least each indispensable portion is crystallized to a minimum. With the construction described above, it becomes possible to save time taken to irradiate the laser light onto each portion to be removed through the patterning after the crystallization of the semiconductor film.
    Type: Grant
    Filed: September 5, 2006
    Date of Patent: April 15, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Hisashi Ohtani, Masaaki Hiroki, Koichiro Tanaka, Aiko Shiga, Satoshi Murakami, Mai Akiba
  • Patent number: 8557040
    Abstract: The disclosed subject matter relates to the use of laser crystallization of thin films to create epitaxially textured crystalline thick films. In one or more embodiments, a method for preparing a thick crystalline film includes providing a film for crystallization on a substrate, wherein at least a portion of the substrate is substantially transparent to laser irradiation, said film including a seed layer having a predominant surface crystallographic orientation; and a top layer disposed above the seed layer; irradiating the film from the back side of the substrate using a pulsed laser to melt a first portion of the top layer at an interface with the seed layer while a second portion of the top layer remains solid; and re-solidifying the first portion of the top layer to form a crystalline laser epitaxial with the seed layer thereby releasing heat to melt an adjacent portion of the top layer.
    Type: Grant
    Filed: November 21, 2008
    Date of Patent: October 15, 2013
    Assignee: The Trustees of Columbia University in the City of New York
    Inventor: James S. Im
  • Publication number: 20130186455
    Abstract: A method for forming single crystal or large-crystal-grain thin-film layers deposits a thin-film amorphous, nanocrystalline, microcrystalline, or polycrystalline layer, and laser-heats a seed spot having size on the order of a critical nucleation size of the thin-film layer. The single-crystal seed spot is extended into a single-crystal seed line by laser-heating one or more crystallization zones adjacent to the seed spot and drawing the zone across the thin-film layer. The single-crystal seed line is extended across the thin-film material layer into a single-crystal layer by laser-heating an adjacent linear crystallization zone and drawing the crystallization zone across the thin-film layer. Photovoltaic cells may be formed in or on the single-crystal layer. Tandem photovoltaic devices may be formed using one or several iterations of the method. The method may also be used to form single-crystal semiconductor thin-film transistors, such as for display devices, or to form single-crystal superconductor layers.
    Type: Application
    Filed: February 21, 2012
    Publication date: July 25, 2013
    Inventors: Jifeng Liu, Xiaoxin Wang
  • Patent number: 8367301
    Abstract: A mask for crystallizing silicon includes a first, a second, and a third pattern part arranged in a longitudinal direction, each of the first, second, and third pattern parts including a plurality of unit blocks for transmitting and blocking a portion of light. At least two of the first, second and third pattern parts have a corresponding pattern to each other. Advantageously, scans using the aforementioned mask effectively remove a boundary on the silicon formed by the difference in the amount of laser beam irradiation received by the silicon, thereby improving electronic characteristics of the silicon.
    Type: Grant
    Filed: September 8, 2010
    Date of Patent: February 5, 2013
    Assignee: Samsung Display Co., Ltd.
    Inventors: Hyun-Dae Kim, Han-Na Jo
  • Patent number: 8328937
    Abstract: A seed crystal axis used in a solution growth of single crystal production system is provided to prevent formation of polycrystals and grow a single crystal with a high growth rate. The seed crystal axis includes a seed crystal bonded to a seed crystal support member between which is interposed a laminated carbon sheet having a high thermal conductivity in a direction perpendicular to a solution surface of a solvent. The laminated carbon sheet includes a plurality of carbon thin films laminated with an adhesive or a plurality of pieces with differing lamination directions arranged in a lattice. Alternatively, a wound carbon sheet including a carbon strip wound concentrically from the center or a wound carbon sheet including a plurality of carbon strips with differing thicknesses which are wound and laminated from the center may be provided.
    Type: Grant
    Filed: July 21, 2009
    Date of Patent: December 11, 2012
    Assignee: Toyota Jidosha Kabushiki Kaisha
    Inventors: Hidemitsu Sakamoto, Yasuyuki Fujiwara
  • Patent number: 8119546
    Abstract: An array substrate includes a base substrate, a switching element, and a pixel electrode. The switching element is on the base substrate. The switching element includes a poly silicon pattern having at least one block. Grains are formed in each of the at least one block that are extended in a plurality of directions. The pixel electrode is electrically connected to the switching element. Therefore, current mobility and design margin of the switching element are improved.
    Type: Grant
    Filed: April 28, 2008
    Date of Patent: February 21, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Soong-Yong Joo, Myung-Koo Kang
  • Patent number: 8016941
    Abstract: A method and apparatus for crystallizing a semiconductor that includes a first layer having a first crystal lattice orientation and a second layer having a second crystal lattice orientation, comprising amorphizing at least a portion of the second layer, applying a stress to the second layer and heating the second layer above a recrystallization temperature.
    Type: Grant
    Filed: February 5, 2007
    Date of Patent: September 13, 2011
    Assignees: Infineon Technologies AG, Samsung Electronics Co., Ltd.
    Inventors: Matthias Hierlemann, Ja-Hum Ku
  • Patent number: 8002893
    Abstract: In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.
    Type: Grant
    Filed: December 23, 2008
    Date of Patent: August 23, 2011
    Assignee: Komatsu Denshi Kinzoku Kabushiki Kaisha
    Inventors: Daisuke Ebi, Kentaro Nakamura, Kengo Hayashi, Yoshinobu Hiraishi, Shigeo Morimoto, Hiroshi Monden
  • Patent number: 7919366
    Abstract: A laser crystallization method in which an amorphous silicon thin film 2 formed on a substrate 1 is irradiated with a laser beam, the method including the steps of providing the amorphous silicon thin film 2 with an absorbent to form an absorbent layer 3 on the desired specific local areas of the amorphous silicon thin film 2 and laser annealing for crystallizing the specific local areas of the amorphous silicon thin film 2 by irradiating the amorphous silicon thin film 2 including the specific local areas with a semiconductor laser beam L having a specific wavelength absorbable by the absorbent layer 3 and unabsorbable by the amorphous silicon thin film 2 for heating the absorbent layer 3.
    Type: Grant
    Filed: October 9, 2009
    Date of Patent: April 5, 2011
    Assignees: Osaka University, The Japan Steel Works, Ltd.
    Inventors: Takahisa Jitsuno, Keiu Tokumura, Ryotaro Togashi, Toshio Inami, Hideaki Kusama, Tatsumi Goto
  • Patent number: 7713848
    Abstract: The invention relates to a method for re-crystallization of layer structures by means of zone melting, in which, as a result of convenient arrangement of a plurality of heat sources, a significant acceleration of the zone melting method can be achieved. The method is based on the fact that a continuous recrystallisation of the layer is ensured as a result of overlaps being produced. According to the invention, a device is likewise provided with which the method according to the invention can be achieved. The method according to the invention is used in particular in the production of crystalline silicon thin layer solar cells or for example in SOI technology. However the application likewise relates also in general to the processing of metals, plastic materials or adhesives and here in particular to the production of thin layers.
    Type: Grant
    Filed: September 4, 2006
    Date of Patent: May 11, 2010
    Assignee: Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
    Inventors: Stefan Reber, Achim Eyer, Fridolin Haas
  • Patent number: 7666767
    Abstract: A mask for sequential lateral solidification (SLS) process with at least one transparency region is provided. The transparent region is defined by two lengthwise edges, a front edge, and a rear edge. The two lengthwise edges also define a quadrilateral. The front edge is located outside the quadrilateral, and the rear edge is located inside the quadrilateral.
    Type: Grant
    Filed: July 31, 2006
    Date of Patent: February 23, 2010
    Assignee: AU Optronics Corp.
    Inventor: Ming-Wei Sun
  • Patent number: 7569462
    Abstract: The present invention provides a method of recrystallizing a silicon sheet, and in particular recrystallizing a small grained silicon sheet to improve material properties such as grain size and orientation. According to one aspect, the method includes using rapid thermal processing (RTP) to melt and recrystallize one or more entire silicon sheet(s) in one heating sequence. According to another aspect, the method includes directionally controlling a temperature drop across the thickness of the sheet so as to facilitate the production of a small number of nuclei in the melted material and their growth into large grains. According to a further aspect, the invention includes a re-crystallization chamber in an overall process flow that enables high-throughput processing of silicon sheets having desired properties for applications such as photovoltaic modules.
    Type: Grant
    Filed: December 13, 2006
    Date of Patent: August 4, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Virendra V. Rana, Robert Z. Bachrach
  • Publication number: 20090014840
    Abstract: The invention is a method for the production of a silicon foil with a targeted charge carrier transport to the p-n transition by means of an integral electric field (‘drift field’). By varying the crystal growth speed and introducing a doping substance into the fluid silicon beforehand, a crystallization process can be carried out in such a way that a gradient over the foil thickness is produced in the doping profile in the silicon. This gradient of the doping profile gives rise to an electric field. With the aid of various foil casting techniques foils that are suitable for the production of solar cells can thus be produced in a relatively simple manner.
    Type: Application
    Filed: June 10, 2005
    Publication date: January 15, 2009
    Applicant: RGS DEVELOPMENT B.V.
    Inventor: Axel Georg Schonecker
  • Patent number: 7396712
    Abstract: A thin film processing method for processing the thin film by irradiating an optical beam to the thin film. A unit of the irradiation of the optical beam includes a first and a second optical pulse irradiation to the thin film, and the unit of the irradiation is carried out repeatedly to process the thin film. The first and the second optical pulse have pulse waveforms different from each other. Preferably, a unit of the irradiation of the optical beam includes the a first optical pulse irradiated to the thin film and a second optical pulse irradiated to the thin film starting substantially simultaneous with the first optical pulse irradiation. In this case, the relationship between the first and the second optical pulse satisfies (the pulse width of the first optical pulse)<(the optical pulse of the second optical pulse) and (the irradiation intensity of the first optical pulse)?(the irradiation intensity of the second optical pulse).
    Type: Grant
    Filed: April 10, 2006
    Date of Patent: July 8, 2008
    Assignees: NEC Corporation, Sumitomo Heavy Industries, Ltd
    Inventors: Hiroshi Tanabe, Akihiko Taneda
  • Patent number: 7393409
    Abstract: The method provides CaF2 single crystals with low scattering, small refractive index differences and few small angle grain boundaries, which can be tempered at elevated temperatures. In the method a CaF2 starting material is heat-treated for at least five hours at temperatures between 1000° C. and 1250° C. and then sublimed at a sublimation temperature of at least 1100° C. in a vacuum of at most 5*10?4 mbar to form a vapor. The vapor is condensed at a condensation temperature of at least 500° C., which is at least 20° C. below the sublimitation temperature, to form a condensate. Then a melt formed from the condensate is cooled in a controlled manner to obtain the single crystal, which is subsequently tempered. The method is preferably performed with a CaF2 starting material including waste material and cuttings from previously used melts.
    Type: Grant
    Filed: February 22, 2005
    Date of Patent: July 1, 2008
    Assignee: Schott AG
    Inventors: Lars Ortmann, Joerg Kandler, Andreas Menzel, Matthias Mueller, Lutz Parthier, Gordon Von der Goenna
  • Patent number: 7357963
    Abstract: A sequential lateral solidification apparatus includes a laser generator for generating and emitting a laser beam; an X-Y stage movable in two orthogonal axial directions; and a mask arranged between the laser generator and the X-Y stage. The mask has a plurality of slits through which the laser beam passes. An objective lens for scaling down the laser beam is arranged between the mask and the X-Y stage. A mask stage is connected to the mask for controlling minute movement of the mask for crystallizing amorphous silicon in one block.
    Type: Grant
    Filed: December 26, 2001
    Date of Patent: April 15, 2008
    Assignee: LG.Philips LCD Co., Ltd.
    Inventor: Yun-Ho Jung
  • Patent number: 7300516
    Abstract: When a laser beam is radiated on a semiconductor film under appropriate conditions, the semiconductor film can be crystallized into single crystal-like grains connected in a scanning direction of the laser beam (laser annealing). The most efficient laser annealing condition is studied. When a length of one side of a rectangular substrate on which a semiconductor film is formed is b, a scanning speed is V, and acceleration necessary to attain the scanning speed V of the laser beam relative to the substrate is g, and when V=(gb/5.477)1/2 is satisfied, a time necessary for the laser annealing is made shortest. The acceleration g is made constant, however, when it is a function of time, a time-averaged value thereof can be used in place of the constant.
    Type: Grant
    Filed: October 13, 2004
    Date of Patent: November 27, 2007
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Koichiro Tanaka
  • Patent number: 7214574
    Abstract: To provide a method and a device for subjecting a film to be treated to a heating treatment effectively by a lamp annealing process, ultraviolet light is irradiated from the upper face side of a substrate where the film to be treated is formed and infrared light is irradiated from the lower face side by which the lamp annealing process is carried out. According to such a constitution, the efficiency of exciting the film to be treated is significantly promoted since electron excitation effect by the ultraviolet light irradiation is added to vibrational excitation effect by the infrared light irradiation and strain energy caused in the film to be treated by the lamp annealing process is removed or reduced by a furnace annealing process.
    Type: Grant
    Filed: May 7, 2002
    Date of Patent: May 8, 2007
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Hisashi Ohtani
  • Patent number: 7205184
    Abstract: A method of crystallizing a silicon film by which it is possible to obtain a polycrystalline silicon thin film having a uniform crystal structure and a good quality, and a method of manufacturing a thin film transistor-liquid crystal display (TFT-LCD) using the same. In the method of crystallizing the silicon film, an amorphous silicon film is formed on a substrate and a reflective film pattern is formed on the amorphous silicon film. The silicon film is crystallized by irradiating a laser onto the amorphous silicon film. The reflective film pattern is formed to expose the channel of the thin film transistor in the amorphous silicon film.
    Type: Grant
    Filed: October 14, 1998
    Date of Patent: April 17, 2007
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Heon-je Kim
  • Patent number: 7078246
    Abstract: In an annealing process in which laser light is irradiated to a semiconductor thin film, a refractive index of the semiconductor thin film after laser light irradiation is measured and conditions for the next laser light irradiation are adjusted based on the measured refractive index value. For example, laser light irradiation conditions are adjusted so that semiconductor thin films always have the same refractive index. As a result, the annealing can be performed under the same conditions at every laser light irradiation even if the laser light irradiation conditions vary unavoidably.
    Type: Grant
    Filed: April 5, 2004
    Date of Patent: July 18, 2006
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Naoaki Yamaguchi, Koichiro Tanaka, Satoshi Teramoto
  • Patent number: 7067006
    Abstract: A method of forming a single crystalline structure having a substantially linear response at least over the wave lengths of 1,200 to 1,700 nanometers, the resulting structure and its use as an optical media or a barrier coating. Thus, maximum obtainable optical transmission with zero attenuation is provided. There is no intrinsic material absorption.
    Type: Grant
    Filed: October 5, 2002
    Date of Patent: June 27, 2006
    Assignee: CZT Inc.
    Inventor: Susana Curatolo
  • Patent number: 7041580
    Abstract: A laser-annealing method includes the steps of a first step of cleaning a non-monocrystal silicon film formed on a substrate, and a second step of laser-annealing the non-monocrystal silicon film in an atmosphere containing oxygen therein, wherein the first and second steps are conducted continuously without being exposed to the air. Also, a laser-annealing device includes a cleaning chamber, and a laser irradiation chamber, wherein a substrate to be processed is transported between the cleaning chamber and the laser irradiation chamber without being exposed to the air.
    Type: Grant
    Filed: December 18, 2001
    Date of Patent: May 9, 2006
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Naoto Kusumoto, Toru Takayama, Masato Yonezawa
  • Patent number: 6860938
    Abstract: The present invention provides a method by which an oxide material having excellent thermoelectric conversion performance can be produced by a simple process. Specifically, the present invention provides a method for producing a composite oxide single crystal in which a mixture of raw substances including a Bi-containing substance, a Sr-containing substance, a Ca-containing substance, a Co-containing substance and a Te-containing substance, or a mixture of raw substances also including a Pb-containing substance in addition to the above-mentioned substances, is heated in an oxygen-containing atmosphere at a temperature below the melting point of any of the raw substances. The composite oxide single crystal produced by the method of the present invention is a ribbon-shaped fibrous single crystal that is about 10 to 10,000 ?m long, about 20 to 200 ?m wide, and about 1 to 5 ?m thick.
    Type: Grant
    Filed: May 27, 2002
    Date of Patent: March 1, 2005
    Assignee: National Institute of Advanced Technology
    Inventors: Ryoji Funahashi, Ichiro Matsubara, Masahiro Shikano
  • Patent number: 6830616
    Abstract: The nickel element is provided selectively, i.e., adjacent to part of the surface of an amorphous silicon film in a long and narrow opening. The amorphous silicon film is irradiated with linear infrared light beams emitted from respective linear infrared lamps while scanned with the linear beams perpendicularly to the longitudinal direction of the opening. The longitudinal direction of the linear beams are set coincident with that of the opening. The infrared light beams are absorbed by the silicon film mainly as thermal energy, whereby a negative temperature gradient is formed in the silicon film. The temperature gradient moves as the lamps are moved for the scanning. The direction of the negative temperature gradient is set coincident with the lamp movement direction and an intended crystal growth direction, which enables crystal growth to proceed parallel with a substrate uniformly over a long distance.
    Type: Grant
    Filed: June 15, 2000
    Date of Patent: December 14, 2004
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Hisashi Ohtani
  • Patent number: 6818059
    Abstract: The present invention is related to a method of crystallizing an amorphous silicon layer and a crystallizing apparatus thereof which crystallize an amorphous silicon layer using plasma. The present invention includes the steps of depositing an inducing substance for silicon crystallization on an amorphous silicon layer by plasma exposure, and carrying out annealing on the amorphous silicon layer to the amorphous silicon layer. The present invention includes a chamber having an inner space, a substrate support in the chamber wherein the substrate support supports a substrate, a plasma generating means in the chamber wherein the plasma generating means produces plasma inside the chamber, and a heater at the substrate support wherein the heater supplies the substrate with heat.
    Type: Grant
    Filed: July 9, 1999
    Date of Patent: November 16, 2004
    Assignees: LG. Philips LCD Co., Ltd.
    Inventors: Jin Jang, Soo-Young Yoon, Jae-Young Oh, Woo-Sung Shon, Seong-Jin Park
  • Patent number: 6758898
    Abstract: The invention relates to a method for growing single crystals of barium titanate [BaTiO3] and barium titanate solid solutions [(BaxM1−x)(TiyN1−y)O3]. This invention is directed to a method for growing single crystals of barium titanate or barium titanate solid solutions showing the primary and secondary abnormal grain growths with increasing temperature higher than the liquid formation temperature, characterized by comprising the step for a few secondary abnormal grains to continue to grow at a temperature slightly below the critical temperature where the secondary abnormal grain growth starts to occur. The method for growing single crystals of barium titanate or barium titanate solid solutions according to this invention has the advantage of providing an effective low cost in manufacturing process for single crystals by using a conventional heat-treatment process without the need of special equipment.
    Type: Grant
    Filed: June 7, 2002
    Date of Patent: July 6, 2004
    Assignee: Ceracomp Co. Ltd.
    Inventors: Ho-Yong Lee, Jao-Suk Kim, Jong-Bong Lee, Tae-Moo Hur, Doe-Yeon Kim, Nong-Moon Hwang, Byoung-Ki Lee, Sung-Yoon Chung, Suk-Joong L. Kang
  • Patent number: 6716283
    Abstract: In an annealing process in which laser light is irradiated to a semiconductor thin film, a refractive index of the semiconductor thin film after laser light irradiation is measured and conditions for the next laser light irradiation are adjusted based on the measured refractive index value. For example, laser light irradiation conditions are adjusted so that semiconductor thin films always have the same refractive index. As a result, the annealing can be performed under the same conditions at every laser light irradiation even if the laser light irradiation conditions vary unavoidably.
    Type: Grant
    Filed: January 4, 2002
    Date of Patent: April 6, 2004
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Naoaki Yamaguchi, Koichiro Tanaka, Satoshi Teramoto
  • Patent number: 6544331
    Abstract: A crystal oscillator and method for manufacturing same including excitation electrode portions formed upon a crystal substrate and thus forming an excitation portion of the area defined between the electrode portions. Axis inversion portions possess an electrical axis (−X) opposite to the electrical axis (X) of the excitation portion, these axis inversion portions being formed within the crystal substrate at a position other than that of the excitation portion. A stable resonance frequency and filter frequency can be obtained even under conditions of ambient temperature fluctuation, by means of a relatively simple temperature compensation circuit, wherein handling is easy and no complicated adjustment is necessary, and low costs can be realized.
    Type: Grant
    Filed: May 18, 1999
    Date of Patent: April 8, 2003
    Assignee: Mitsubishi Materials Corporation
    Inventor: Takehiko Uno
  • Patent number: 6482259
    Abstract: The invention relates to a method for growing single crystals of barium titanate [BaTiO3] and barium titanate solid solutions [(BaxM1-x)(TiyN1-y)O3]. This invention is directed to a method for growing single crystals of barium titanate or barium titanate solid solutions showing the primary and secondary abnormal grain growths with increasing temperature higher than the liquid formation temperature, characterized by comprising the step for a few secondary abnormal grains to continue to grow at a temperature slightly below the critical temperature where the secondary abnormal grain growth starts to occur. The method for growing single crystals of barium titanate or barium titanate solid solutions according to this invention has an advantage to provide an effective low cost in manufacturing process for single crystals by using usual heat-treatment process without special equipments.
    Type: Grant
    Filed: February 20, 2001
    Date of Patent: November 19, 2002
    Assignee: Ceracomp Co., Ltd.
    Inventors: Ho-Yong Lee, Jae-Suk Kim, Jong-Hong Lee, Tae-Moo Hur, Doe-Yeon Kim, Nong-Moon Hwang, Byoung-Ki Lee, Sung-Yoon Chung, Suk-Joong L. Kang
  • Patent number: 6458200
    Abstract: A process for fabricating thin film transistors is disclosed, which comprises a two-step laser annealing process as follows: crystallizing the channel portion by irradiating the channel portion with an irradiation beam; and modifying the electric properties of the source and the drain by irradiating the source and the drain with an irradiation beam in a step independent to the first step of crystallizing the channel portion.
    Type: Grant
    Filed: July 12, 1993
    Date of Patent: October 1, 2002
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Hongyong Zhang
  • Patent number: 6423585
    Abstract: To provide a method and a device for subjecting a film to be treated to a heating treatment effectively by a lamp annealing process, ultraviolet light is irradiated from the upper face side of a substrate where the film to be treated is formed and infrared light is irradiated from the lower face side by which the lamp annealing process is carried out. According to such a constitution, the efficiency of exciting the film to be treated is significantly promoted since electron excitation effect by the ultraviolet light irradiation is added to vibrational excitation effect by the infrared light irradiation and strain energy caused in the film to be treated by the lamp annealing process is removed or reduced by a furnace annealing process.
    Type: Grant
    Filed: March 10, 1998
    Date of Patent: July 23, 2002
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Hisashi Ohtani
  • Publication number: 20020059896
    Abstract: In an annealing process in which laser light is irradiated to a semiconductor thin film, a refractive index of the semiconductor thin film after laser light irradiation is measured and conditions for the next laser light irradiation are adjusted based on the measured refractive index value. For example, laser light irradiation conditions are adjusted so that semiconductor thin films always have the same refractive index. As a result, the annealing can be performed under the same conditions at every laser light irradiation even if the laser light irradiation conditions vary unavoidably.
    Type: Application
    Filed: January 4, 2002
    Publication date: May 23, 2002
    Inventors: Naoaki Yamaguchi, Koichiro Tanaka, Satoshi Teramoto
  • Patent number: 6372039
    Abstract: A method and device for irradiating a pulse laser beam having a linear shape and a rectangular shape beam spot onto a non-single crystal semiconductor thin film. The method includes scanning the pulse laser beam so that previous and next beam spots are partially overlapped.
    Type: Grant
    Filed: March 22, 1999
    Date of Patent: April 16, 2002
    Assignee: NEC Corporation
    Inventors: Hiroshi Okumura, Hiroshi Tanabe
  • Patent number: 6336969
    Abstract: In an annealing process in which laser light is irradiated to a semiconductor thin film, a refractive index of the semiconductor thin film after laser light irradiation is measured and conditions for the next laser light irradiation are adjusted based on the measured refractive index value. For example, laser light irradiation conditions are adjusted so that semiconductor thin films always have the same refractive index. As a result, the annealing can be performed under the same conditions at every laser light irradiation even if the laser light irradiation conditions vary unavoidably.
    Type: Grant
    Filed: April 11, 2000
    Date of Patent: January 8, 2002
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Naoaki Yamaguchi, Koichiro Tanaka, Satoshi Teramoto
  • Patent number: 6299681
    Abstract: A polycrystalline article is converted to a single crystal in a solid-state process. Heat is applied at a first end of the article to effect a predetermined spatial temperature profile thereat having a maximum temperature approaching a melting temperature thereof. The temperature profile is maintained to initiate conversion at the first end. The heat is moved along the article toward an opposite second end to correspondingly propagate the conversion along the article.
    Type: Grant
    Filed: November 27, 1998
    Date of Patent: October 9, 2001
    Assignee: General Electric Company
    Inventors: Farzin Homayoun Azad, Marshall Gordon Jones
  • Patent number: 6204156
    Abstract: A process to fabricate a thin film transistor using an intrinsic polycrystalline silicon film, by a method of: preparing a semiconductor assembly; forming an insulation layer on a substrate; forming a first amorphous silicon layer on said insulation layer; forming silicon nucleation sites on said first amorphous silicon layer; converting said first amorphous silicon layer into hemispherical grained silicon, said hemispherical grained silicon being formed about said silicon nucleation sites; forming a second amorphous silicon layer covering said hemispherical grained silicon; annealing said second amorphous silicon layer to convert said second amorphous silicon layer into a grained silicon film, said grained silicon film being formed about said hemispherical grained silicon and having a dimension of approximately 0.1 microns to 0.
    Type: Grant
    Filed: September 2, 1999
    Date of Patent: March 20, 2001
    Assignee: Micron Technology, Inc.
    Inventor: Er-Xuan Ping
  • Patent number: 6187088
    Abstract: A pulse laser beam having a rectangular irradiation region is irradiated on the same point in a non-single crystal semiconductor film multiple times. The pulse laser beam has an energy profile in a longitudinal direction in the beam irradiation region as follows: (a) there are the first region having an energy density of Ea or higher and the second regions on both sides of the first region having an energy density of less than Ea, and (b) an energy density slope has an absolute value of 20 to 300 J/cm3 in a boundary region extending to 1 &mgr;m from the boundary line between the first and the second regions.
    Type: Grant
    Filed: July 15, 1999
    Date of Patent: February 13, 2001
    Assignee: NEC Corporation
    Inventor: Hiroshi Okumura
  • Patent number: 6176922
    Abstract: A method is presented for crystallizing a thin film on a substrate by generating a beam of pulsed optical energy, countouring the intensity profile of the beam, and illuminating the thin film with the beam to crystallize the thin film into a single crystal lattice structure.
    Type: Grant
    Filed: October 6, 1999
    Date of Patent: January 23, 2001
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Monti E. Aklufi, Stephen D. Russell
  • Patent number: 6126741
    Abstract: A polycrystalline carbon body is converted to a different crystallography by directing an infrared laser beam at a crystal boundary interface. By using a beam having a 5.3 micron wavelength so as to fall within a 5-9 micron range of normal spectral transmittance of the carbon, the interface is heated for solid state conversion by passing the beam through a forward portion of the body without appreciably heating the forward portion. During heating, the interface propagates through the body, thus converting an ever-decreasing aft portion of the body to the different crystallography.
    Type: Grant
    Filed: December 7, 1998
    Date of Patent: October 3, 2000
    Assignee: General Electric Company
    Inventors: Marshall Gordon Jones, Hsin-Pang Wang
  • Patent number: 6096581
    Abstract: A method for operating an active matrix display device having an active matrix circuit, a column driver circuit and a scan driver circuit including driving the active matrix circuit by the column driver circuit and the scan driver circuit, wherein each of the active matrix circuit, column driver circuit and scan driver circuit includes by thin film transistors and wherein a variation in threshold voltages of the thin film transistors of the column driver circuit is not greater than 0.05 V.
    Type: Grant
    Filed: May 2, 1996
    Date of Patent: August 1, 2000
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hongyong Zhang, Naoaki Yamaguchi, Yasuhiko Takemura
  • Patent number: 6059873
    Abstract: In an annealing process in which laser light is irradiated to a semiconductor thin film, a refractive index of the semiconductor thin film after laser light irradiation is measured and conditions for the next laser light irradiation are adjusted based on the measured refractive index value. For example, laser light irradiation conditions are adjusted so that semiconductor thin films always have the same refractive index. As a result, the annealing can be performed under the same conditions at every laser light irradiation even if the laser light irradiation conditions vary unavoidably. For a crystalline silicon film, if the refractive index is larger than 3.5, then a thin-film transistor using such as film has desired crystallinity and flatness properties such that a field-effect mobility is greater than 100 cm.sup.2 /Vsec.
    Type: Grant
    Filed: May 26, 1995
    Date of Patent: May 9, 2000
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Naoaki Yamaguchi, Koichiro Tanaka, Satoshi Teramoto
  • Patent number: 5993538
    Abstract: In order to form a single-crystalline thin film on a polycrystalline substrate using plasma CVD, a downwardly directed mainly neutral Ne atom current is formed by an ECR ion generator (2). A reaction gas such as silane gas which is supplied from a reaction gas inlet pipe (13) is sprayed onto an SiO.sub.2 substrate (11) by an action of the Ne atom current, so that an amorphous Si thin film is grown on the substrate (11) by a plasma CVD reaction. At the same time, a part of the Ne atom current having high directivity is directly incident upon the substrate (11), while another part thereof is incident upon the substrate (11) after its course is bent by a reflector (12). The reflector (12) is so set that all directions of the parts of the Ne atom current which are incident upon the substrate (11) are perpendicular to densest planes of single-crystalline Si.
    Type: Grant
    Filed: February 13, 1996
    Date of Patent: November 30, 1999
    Assignee: Mega Chips Corporation
    Inventors: Toshifumi Asakawa, Masahiro Shindo, Toshikazu Yoshimizu, Sumiyoshi Ueyama