Abstract: The present invention relates to a method for manufacturing a monocrystalline metal foil and a monocrystalline metal foil manufactured thereby, the method comprising the steps of: fixing each of the ends of a polycrystalline metal foil to electrodes; and heat-treating the fixed polycrystalline metal foil to manufacture a monocrystalline metal foil.

Abstract: A method of manufacturing a component includes making a preform from a powdered material, the preform having a density in a range from 70 to 95% of theoretical density of the material, The method also includes sintering the preform using a Field Assisted Sintering Technique (FAST) process to produce a component having a density of greater than 97% of the theoretical density of the material. Components, in particular low aspect components, formed by said method are also described.

Abstract: An object of the present invention is to provide a polyimide tube for a fixing belt, the polyimide tube having good toner fixability. A polyimide tube for a fixing belt of an image-forming apparatus according to the present invention includes a polyimide layer that contains a polyimide as a main component and a needle-like filler, the needle-like filler containing a carbon nanotube and needle-like titanium oxide. A product of a thermal diffusivity (m2/s) of the polyimide layer and a breaking elongation (%) of the polyimide layer in an axial direction is 35×10?7 or more. An orientation direction of the needle-like filler is preferably an axial direction or a circumferential direction.

Abstract: The present invention relates to a porous alpha-SiC-containing shaped body with a gas-permeable, open-pored pore structure comprising platelet-shaped crystallites which are connected to form an interconnected, continuous skeletal structure, wherein the skeletal structure consists of more than 80 wt.-% alpha-SiC, relative to the total weight of SiC, a process for producing same and its use as a filter component.

Abstract: A semiconductor device with favorable electrical characteristics is provided. In an oxide semiconductor film, a plurality of electron diffraction patterns are observed in such a manner that a surface over which the oxide semiconductor film is formed is irradiated with an electron beam having a probe diameter whose half-width is 1 nm while the position of the film and the position of the electron beam are relatively moved. The electron diffraction patterns include 50 or more electron diffraction patterns observed in different areas. The sum of the percentage of first electron diffraction patterns and the percentage of second electron diffraction patterns accounts for 100%. The first electron diffraction patterns account for 50% or more. The first electron diffraction pattern includes observation points that are not symmetry or observation points disposed in a circular pattern. The second electron diffraction pattern includes observation points corresponding to the vertices of a hexagon.

Abstract: A method for producing a silicon nitride substrate includes a raw material powder preparation step of preparing a raw material powder containing a silicon powder, a rare earth element compound, and a magnesium compound, wherein, when the amount of silicon in the raw material powder is expressed in terms of a silicon nitride content, the raw material powder contains the rare earth element compound at 1 mol % to 7 mol % in terms of an oxide content and contains the magnesium compound at 8 mol % to 15 mol % in terms of an oxide content; a sheet forming step of forming the raw material powder into a sheet article; a nitriding step of heating the sheet article in a nitrogen atmosphere at 1200° C. to 1500° C. and nitriding silicon contained in the sheet article; and a sintering step of sintering the sheet article under a nitrogen atmosphere after the nitriding step.

Abstract: The present invention relates to a porous alpha-SiC-containing shaped body with a gas-permeable, open-pored pore structure comprising platelet-shaped crystallites which are connected to form an interconnected, continuous skeletal structure, wherein the skeletal structure consists of more than 80 wt.-% alpha-SiC, relative to the total weight of SiC, a process for producing same and its use as a filter component.

Abstract: A ceramic matrix composite includes a plurality of fibers embedded in a matrix. The composition of the matrix is selected to achieve a desired relationship between the mechanical and thermal properties of the matrix and the fibers.

Abstract: A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A single-component oxide semiconductor layer is formed over a substrate; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a single-component oxide semiconductor layer including single crystal regions is formed; and a multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions.

Abstract: Methods for producing nanostructures from copper-based catalysts on porous substrates, particularly silicon nanowires on carbon-based substrates for use as battery active materials, are provided. Related compositions are also described. In addition, novel methods for production of copper-based catalyst particles are provided. Methods for producing nanostructures from catalyst particles that comprise a gold shell and a core that does not include gold are also provided.

Abstract: A chemically and thermally stable phosphor having unconventional light emitting properties and high light emitting intensity with an LED of 470 nm or less, includes an inorganic compound comprising: a crystal designated by A3(D,E)8X14, a crystal designated by Sr3Si8O4N10 or an inorganic crystal having the identical crystal structure of the Sr3Si8O4N10 crystal, which comprises A element, D element, X element, and optionally E element if necessary (A is one or more kinds selected from Li, Mg, Ca, Sr, and Ba; D is one or more kinds selected from Si, Ge, Sn, Ti, Zr, and Hf; X is one or more kinds selected from O, N, and F; and E is one or more kinds selected from B, Al, Ga, In, Sc, Y, and La.), into which M element is solid-solved (M is one or more kinds selected from Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, and Yb.).

Abstract: The instant disclosure relates to a device and method for recrystallising a silicon wafer or a wafer comprising at least one silicon layer. The silicon wafer or the at least one silicon layer of the wafer is totally molten.

Abstract: The present invention provides a crystalline substance that has an uneven structure extending along the direction of a crystal axis. An aspect of the present invention provides a crystalline substance 1, which has a surface 10L that exposes an oxide crystal thereon and extends in a direction of a crystal axis of the oxide crystal, wherein the surface 10L has an uneven structure that is configured by faces 11L to 14L extending in at least three orientations along the crystal axis.

Abstract: Titanium dioxide which includes particles having a large major-axis length in a large proportion and comprises columnar particles having a satisfactory particle size distribution. A titanium compound, an alkali metal compound, and an oxyphosphorus compound are heated/fired in the presence of titanium dioxide nucleus crystals having an aspect ratio of 2 or higher to grow the titanium dioxide nucleus crystals. Subsequently, a titanium compound, an alkali metal compound, and an oxyphosphorus compound are further added and heated/fired in the presence of the grown titanium dioxide nucleus crystals. Thus, titanium dioxide is produced which comprises columnar particles having a weight-average major-axis length of 7.0-15.0 ?m and in which particles having a major-axis length of 10 ?m or longer account for 15 wt. % or more of all the particles.

Abstract: The disclosed subject matter relates to the use of laser crystallization of thin films to create epitaxially textured crystalline thick films. In one or more embodiments, a method for preparing a thick crystalline film includes providing a film for crystallization on a substrate, wherein at least a portion of the substrate is substantially transparent to laser irradiation, said film including a seed layer having a predominant surface crystallographic orientation; and a top layer disposed above the seed layer; irradiating the film from the back side of the substrate using a pulsed laser to melt a first portion of the top layer at an interface with the seed layer while a second portion of the top layer remains solid; and re-solidifying the first portion of the top layer to form a crystalline laser epitaxial with the seed layer thereby releasing heat to melt an adjacent portion of the top layer.

Abstract: A condition of a single crystal manufacturing step subjected to the Czochralski method applying an initial oxygen concentration, a dopant concentration or resistivity, and a heat treatment condition is determined simply and clearly on the basis of the conditions of a wafer manufacturing step and a device step so as to obtain a silicon wafer having a desired gettering capability. A manufacturing method of a silicon substrate which is manufactured from a silicon single crystal grown by the CZ method and provided for manufacturing a solid-state imaging device is provided. The internal state of the silicon substrate, which depends on the initial oxygen concentration, the carbon concentration, the resistivity, and the pulling condition of the silicon substrate, is determined by comparing a white spot condition representing upper and lower limits of the density of white spots as device characteristics with the measured density of white spots.

Abstract: Among other things, piezoelectric materials and methods of their manufacture are described; particularly methods of forming regions of varying crystal structure within a relaxor piezoelectric substrate. Such methods may including heating the piezoelectric substrate above the transition temperature and below the Curie temperature such that a first phase transition occurs to a first crystal structure; rapidly cooling the piezoelectric substrate below the transition temperature at a cooling rate that is sufficiently high for the first crystal structure to persist; and applying an electric field through one or more selected regions of the piezoelectric substrate, such that within the one or more selected regions, a second phase transition occurs and results in a second crystal structure.

Abstract: A textured PMN-PZT ceramic is created using templated grain growth to align seed crystals in a ceramic matrix powder by tape-casting process. Heat treatment then results in the nucleation and growth of matrix crystals on aligned templates. The resulting textured PMN-PZT ceramic has high longitudinal piezoelectric coefficient and a high piezoelectric voltage coefficient. In another embodiment, a textured PMN-PT ceramic has a volume fraction of the templates no greater than 1%. The utility of this invention includes both its exceptional piezoelectric properties as well as the utilization of an economical manufacturing process that is widely used in the multi-layer ceramic capacitor industry.

Abstract: An apparatus for manufacturing a polycrystalline silicon thin film, including a crystallization container filled with silicon oil, crystallization electrodes spaced apart from the crystallization container, and a conductive plate positioned between the crystallization electrodes and connected with the crystallization electrodes. Because an insulating layer between the amorphous silicon thin film and the conductive plate is formed by using silicon oil filled within the crystallization container, Joule-heating induced crystallization (JIC) can be performed through a simpler manufacturing process.

Abstract: The use of the effect of crystallographic axis orientation on the effectiveness in annealing in multiple atmospheres and chemical compositions of lutetium oxyorthosilicate crystals and other scintillator crystals is disclosed. By controlling axis orientation an favorable annealing condition can be selected to repair both internal interstitial and vacancy defects through the crystal lattice. Axis orientation can be further utilized to control the uniformity of surface finish of chemically etched crystal.

Abstract: The present invention relates to fabrication and application of compositions, devices, methods and systems for utilizing radiation more efficiently as compared to known systems. A synthesis method provides deposition of titania on a substrate without the use of an electrochemical reaction. An integrated architecture formed by the method of the present invention is comprised of vertically-oriented, one-dimensional, monocrystalline, n-type anatase nanowires in communication with a common transparent conductive substrate, and which are intercalated with a consortia of p-type quantum dots tuned for absorption of infrared and other radiation.

Abstract: Processes of forming an irreversibly loose packed structure of particulate material useful as a photonic or phononic crystal are provided. Matrix material is infilled between particles and extends above the particles to form a particulate free matrix layer. Removing the matrix layer causes deformation of or exposes the spacing between the particles. The spaces are infilled by additional matrix material that when cured produces a supported and irreversibly loose packed crystalline structure of particles producing differing bandgaps and transmissive properties relative to the original structure. The processes provided allow for economical tuning of the transmissive properties of photonic or phononic crystals.

Abstract: [Object] Provided are: a Zn—Si—O-based oxide sintered body, which suppresses abnormal discharge and so forth when used as a sputtering target, or suppresses a splash phenomenon when used as a tablet for vapor deposition; a method for producing the Zn—Si—O-based oxide sintered body; and the like. [Solution] The Zn—Si—O-based oxide sintered body contains zinc oxide as a main component and Si, and is characterized in that a Si content is 0.1 to 10 atomic % with an atomic ratio of Si/(Zn+Si), the Si element is contained in a wurtzite-type zinc oxide phase to form a solid solution, and the oxide sintered body does not contain a SiO2 phase and zinc silicate (Zn2SiO4) as a spinel-type composite oxide phase.

Abstract: One aspect of the present subject matter relates to a method for forming a transistor. According to an embodiment, a fin of amorphous semiconductor material is formed on a crystalline substrate, and a solid phase epitaxy (SPE) process is performed to crystallize the amorphous semiconductor material using the crystalline substrate to seed the crystalline growth. The fin has a cross-sectional thickness in at least one direction less than a minimum feature size. The transistor body is formed in the crystallized semiconductor pillar between a first source/drain region and a second source/drain region. A surrounding gate insulator is formed around the semiconductor pillar, and a surrounding gate is formed around and separated from the semiconductor pillar by the surrounding gate insulator. Other aspects are provided herein.

Abstract: Systems for processing thin films having variable thickness are provided. A crystalline film includes a first crystalline region having a first film thickness and a first crystalline grain structure; and a second crystalline region having a second film thickness and a second crystalline grain structure. The first film thickness is greater than the second film thickness and the first and second film thicknesses are selected to provide a crystalline region having the degree and orientation of crystallization that is desired for a device component.

Abstract: The present invention provides a precursor of positive electrode active substance particles for non-aqueous electrolyte secondary batteries which have a high discharge voltage and a high discharge capacity, hardly suffer from side reactions with an electrolyte solution, and are excellent in cycle characteristics, positive electrode active substance particles for non-aqueous electrolyte secondary batteries, and processes for producing these particles, and a non-aqueous electrolyte secondary battery.

Abstract: The present invention provides a crystalline substance that has an uneven structure extending along the direction of a crystal axis. An aspect of the present invention provides a crystalline substance 1, which has a surface 10L that exposes an oxide crystal thereon and extends in a direction of a crystal axis of the oxide crystal, wherein the surface 10L has an uneven structure that is configured by faces 11L to 14L extending in at least three orientations along the crystal axis.

Abstract: To provide nickel composite hydroxide particles having a small and uniform particle diameter and a method for producing the same. The method for producing the nickel composite hydroxide particles includes: a nucleation step of producing nuclei including primary particles by controlling a pH of an aqueous solution for nucleation to 11.5 to 13.2 at a liquid temperature of 25° C., the aqueous solution for nucleation containing a metal compound having an atomic ratio of metals corresponding to an atomic ratio of metals in the nickel composite hydroxide particles and substantially not containing a metal complex ion-forming agent; and a particle growth step of forming, on an outer surface of each of the nuclei, an outer shell portion including platy primary particles larger than primary particles of the nuclei by controlling a pH of an aqueous solution for particle growth containing the nuclei obtained in the nucleation step to 9.5 to 11.0 at a liquid temperature of 25° C.

Abstract: The disclosed subject matter relates to the use of laser crystallization of thin films to create epitaxially textured crystalline thick films. In one or more embodiments, a method for preparing a thick crystalline film includes providing a film for crystallization on a substrate, wherein at least a portion of the substrate is substantially transparent to laser irradiation, said film including a seed layer having a predominant surface crystallographic orientation; and a top layer disposed above the seed layer; irradiating the film from the back side of the substrate using a pulsed laser to melt a first portion of the top layer at an interface with the seed layer while a second portion of the top layer remains solid; and re-solidifying the first portion of the top layer to form a crystalline laser epitaxial with the seed layer thereby releasing heat to melt an adjacent portion of the top layer.

Abstract: A method for manufacturing a silicon single crystal wafer, having at least: a step of preparing a silicon single crystal ingot; a step of slicing the silicon single crystal ingot to fabricate a plurality of sliced substrates; a processing step of processing the plurality of sliced substrates into a plurality of substrates by performing at least one of lapping, etching, and polishing; a step of sampling at least one from the plurality of substrates; a step of measuring surface roughness of the substrate sampled at the sampling step by an AFM and obtaining an amplitude (an intensity) of a frequency band corresponding to a wavelength of 20 nm to 50 nm to make a judgment of acceptance; and a step of sending the substrate to the next step if a judgment result is acceptance or performing reprocessing if the judgment result is rejection.

Abstract: Compositions made by metallothermal reduction from crystalline materials and methods of producing such compositions are provided. The compositions have novel crystalline structures in the form of three-dimensional scaffolds. Additionally, the compositions possess unusual properties that indicate possible applications in numerous applications.

Abstract: Methods of forming a crystalline strontium titanate layer may include providing a substrate with a crystal enhancement surface (e.g., Pt), depositing strontium titanate by atomic layer deposition, and conducting a post-deposition anneal to crystallize the strontium titanate. Large single crystal domains may be formed, laterally extending greater distances than the thickness of the strontium titanate and demonstrating greater ordering than the underlying crystal enhancement surface provided to initiate ALD. Functional oxides, particularly perovskite complex oxides, can be heteroepitaxially deposited over the crystallized STO.

Abstract: A thin film which comprises an organic metal salt or an an alkoxide salt or an amorphous thin film is formed on a substrate, wherein each of the thin films enables the formation of a Dion-Jacobson perovskite-type metal oxide represented by the composition formula A(Bn?1MnO3n+1) (wherein n is a natural number of 2 or greater; A represents one or more monovalent cations selected from Na, K, Rb and Cs; B comprises one or more components selected from a trivalent rare earth ion, Bi, a divalent alkaline earth metal ion and a monovalent alkali metal ion; and M comprises one or more of Nb and Ta; wherein a solid solution may be formed with Ti and Zr) on a non-oriented substrate. The resulting product is maintained at the temperature between room temperature and 600° C.; and crystallization is achieved while irradiating the amorphous thin film or the thin film comprising the organic metal salt or the alkoxide salt on the substrate with ultraviolet light such as ultraviolet laser.

Abstract: A method of forming a layer of amorphous silicon oxide positioned between a layer of rare earth oxide and a silicon substrate. The method includes providing a crystalline silicon substrate and depositing a layer of rare earth metal on the silicon substrate in an oxygen deficient ambient at a temperature above approximately 500° C. The rare earth metal forms a layer of rare earth silicide on the substrate. A first layer of rare earth oxide is deposited on the layer of rare earth silicide with a structure and lattice constant substantially similar to the substrate. The structure is annealed in an oxygen ambience to transform the layer of rare earth silicide to a layer of amorphous silicon and an intermediate layer of rare earth oxide between the substrate and the first layer of rare earth oxide.

Abstract: Silicon wafers wherein slip dislocations and warpages during device production are suppressed, contain BMDs with an octahedral shape, and of BMDs at a depth greater than 50 ?m from the surface of the wafer, the density of BMDs with diagonal size of 10 nm to 50 nm is ?1×1012/cm3, and the density of BSFs is ?1×108/cm3. The present silicon wafers preferably have an interstitial oxygen concentration of 4×1017 atoms/cm3 to 6×1017 atoms/cm3, and a density of BMDs with diagonal size of ?200 nm of not more than 1×107/cm3.

Abstract: Disclosed herein is an apparatus and method for growing a diamond. The apparatus for growing a diamond comprises: a reaction cell that is configured to grow the diamond therein; a main heater including a main heating surface that is arranged along a first inner surface of the reaction cell; and a sub-heater including a sub-heating surface that is arranged along a second inner surface of the reaction cell, the second inner surface being non-parallel with the first inner surface.

Abstract: A process of producing a diamond thin-film includes implanting dopant into a diamond by an ion implantation technique, forming a protective layer on at least part of the surface of the ion-implanted diamond, and firing the protected ion-implanted diamond at a firing pressure of no less than 3.5 GPa and a firing temperature of no less than 600° C. A process of producing a diamond semiconductor includes implanting dopant into each of two diamonds by an ion implantation technique and superimposing the two ion-implanted diamonds on each other such that at least part of the surfaces of each of the ion-implanted diamonds makes contact with each other, and firing the ion implanted diamonds at a firing pressure of no less than 3.5 GPa and a firing temperature of no less than 600° C.

Abstract: Methods of growing and manufacturing aluminum nitride crystal, and aluminum nitride crystal produced by the methods. Preventing sublimation of the starting substrate allows aluminum nitride crystal of excellent crystallinity to be grown at improved growth rates. The aluminum nitride crystal growth method includes the following steps. Initially, a laminar baseplate is prepared, furnished with a starting substrate having a major surface and a back side, a first layer formed on the back side, and a second layer formed on the first layer. Aluminum nitride crystal is then grown onto the major surface of the starting substrate by vapor deposition. The first layer is made of a substance that at the temperatures at which the aluminum nitride crystal is grown is less liable to sublimate than the starting substrate. The second layer is made of a substance whose thermal conductivity is higher than that of the first layer.

Abstract: A solid-state far ultraviolet light emitting element is formed by a hexagonal boron nitride single crystal, excited by electron beam irradiation to emit far ultraviolet light having a maximum light emission peak in a far ultraviolet region at a wavelength of 235 nm or shorter.

Abstract: Single-crystal silicon carbide nanowires and a method for producing the nanowires are provided. The single-crystal silicon carbide nanowires have a very high aspect ratio and can be used for the fabrication of nanoelectronic devices, including electron gun emitters and MEMS probe tips, for use in a variety of displays and analyzers. Further provided is a filter comprising the nanowires. The filter is applied to systems for filtering vehicle engine exhaust gases to achieve improved filtering performance and increased lifetime.

Abstract: A semiconductor substrate has a plurality of active device patterns. At least some of the active device patterns comprise doped regions. The substrate has a plurality of surface regions, including the active device patterns and un-patterned regions, with respectively different reflectances for light in a near infrared wavelength. A first difference is determined, between a largest reflectance at the near infrared wavelength and a smallest reflectance at the near infrared wavelength. A second infrared wavelength is determined, for which a second difference between a largest reflectances a smallest reflectance is substantially less than the first difference at the near infrared wavelength. A rapid thermal processing (RTP) spike annealing dopant activation step is performed on the substrate using a second light source providing light at the second wavelength.

Abstract: Graphene layers and associated methods are disclosed. In one aspect, for example, a method of making graphene on a diamond substrate is provided. Such a method can include applying a layer of a metal to a crystallographic face of the diamond substrate, and heating the diamond substrate under vacuum to convert a portion of the diamond substrate at the crystallographic face into graphene. In another aspect, the layer of metal is applied only on diamond substrate faces having a same crystallographic orientation. In yet another aspect, the layer of metal is applied to only a single crystallographic face of the diamond substrate. Additionally, in one aspect, converting the portion of the diamond substrate at the crystallographic face into graphene includes converting the portion of the diamond substrate by a martensitic transformation.

Abstract: In a process for producing an oriented inorganic crystalline film, a non-monocrystalline film containing inorganic crystalline particles is formed on a substrate by a liquid phase technique using a raw-material solution which contains a raw material and an organic solvent, where the inorganic crystalline particles have a layered crystal structure and are contained in the raw material. Then, the non-monocrystalline film is crystallized by heating the non-monocrystalline film to a temperature equal to or higher than the crystallization temperature of the non-monocrystalline film so that part of the inorganic crystalline particles act as crystal nuclei.

Abstract: By controlling the average size of matrix grains of polycrystalline bodies to more than a critical size at which an abnormal, exaggerated or discontinuous grain growth ends, and less than twice the critical size, large single crystals enough for practical use may be made even without occurring abnormal grain growth in polycrystalline bodies only through a heat treatment process without using a melting process and a special apparatus, thereby allowing the mass production of the large single crystals at low costs with high reproduction possibility.

Abstract: A silicon wafer for a photovoltaic cell is produced by a debinding step of a self-supported film formed of at least one main thin layer comprising at least 50% volume of silicon particles, devoid of silicon oxide and encapsulated in a polymer matrix protecting them against oxidation, followed by a sintering step to form the silicon wafer.

Abstract: The inhomogeneous energy distribution at the beam spot on the irradiated surface is caused by a structural problem and processing accuracy of the cylindrical lens array forming an optical system. According to the present invention, in the optical system for forming a rectangular beam spot, an optical system for homogenizing the energy distribution of the shorter side direction of a rectangular beam spot of a laser light on an irradiated surface is replaced with a light guide. The light guide is a circuit that can confine emitted beams in a certain region and guide and transmit its energy flow in parallel with the axis of a path thereof.

Abstract: A device for heat treating (annealing) a III-V semiconductor wafer comprises at least one wafer support unit which is dimensioned such that a cover provided above the wafer surface is either spaced without any distance or with a distance of maximally about 2 mm to the wafer surface. A process for heat treating III-V semiconductor wafers having diameters larger than 100 mm and a dislocation density below 1×104 cm?2 is carried out in the device of the invention. SI GaAs wafers produced have an at least 25% increased characteristic fracture strength (Weibull distribution), an improved radial macroscopic and mesoscopic homogeneity and an improved quality of the mechano-chemically polished surface. The characteristic fracture strength is higher than 1900 MPa.

Abstract: A piezoelectric element comprises a piezoelectric body including a film made of an ABO3 perovskite oxide crystal epitaxially grown above a substrate, and a pair of electrode layers provided to the piezoelectric body, wherein the piezoelectric body has a porous region on a side opposite to a side of the substrate.

Abstract: A phase shifter which modulates the phase of incident light has a light-transmitting substrate such as a glass substrate, and a phase modulator such as a concavity and convexity pattern which is formed on the laser beam incident surface of the light-transmitting substrate and modules the phase of incident light. A light-shielding portion which shields light in the peripheral portion where the optical intensity distribution decreases of the phase modulator is formed on the laser beam incident surface or exit surface of the phase shifter, thereby shielding the peripheral light in the irradiation surface of the incident laser beam.

Abstract: A light irradiation apparatus irradiates a target plane with light having a predetermined light intensity distribution. The apparatus includes a light modulation element having a light modulation pattern of a periodic structure represented by a primitive translation vector (a1, a2), an illumination system for illuminating the modulation element with the light, and an image forming optical system for forming the predetermined light intensity distribution obtained by the modulation pattern on the target plane. A shape of an exit pupil of the illumination system is similar to the Wigner-Seitz cell of a primitive reciprocal lattice vector (b1, b2) obtained from the primitive translation vector (a1, a2) by the following equations: b1=2?(a2×a3)/(a1·(a2×a3)) and b2=2?(a3×a1)/(a1·(a2×a3)) in which a3 is a vector having an arbitrary size in a normal direction of a flat surface of the modulation pattern of the modulation element, “·” is an inner product of the vector, and “×” is an outer product of the vector.