Abstract: A process and apparatus is described for the processing of thin films on semiconductor substrates using one or more liquid precursor sources wherein the liquid precursor source with the highest vapor pressure is first vaporized and then introduced as a vapor into a common manifold connected to a processing chamber, with the point of introduction being spaced away from the processing chamber. A second liquid precursor source, having a vapor pressure lower than the first liquid precursor source, is then introduced in vaporized form into the manifold at a point closer to the processing chamber. This is repeated for each liquid precursor source, with each succeeding liquid precursor source having the next lower vapor pressure being introduced in vaporized form into the manifold at a point closer to the processing chamber than the previous liquid precursor source.

Abstract: A first step models a hot zone in a pulling apparatus of a single crystal as a mesh structure, and a second step inputs physical property values of each member corresponding to meshes combined for each member of the hot zone into a computer. A third step obtains the surface temperature distribution of each member on the basis of the calorific power of a heater and the emissivity of each member, and a fourth step obtains the internal temperature distribution of each member on the basis of the surface temperature distribution and the thermal conductivity of each member, and then further obtains the internal temperature distribution of a molten liquid being in consideration of convection. A fifth step obtains the shape of the solid-liquid interface between the single crystal and the molten liquid in accordance with an isothermal line including a tri-junction of the single crystal. A sixth step repeats said third to fifth steps until the tri-junction becomes the melting point of the single crystal.

Abstract: Crystal growth apparatus comprising a crucible for containing a supply of molten material from which the crystal may be grown and first reflection means for receiving radiation directed along an input path and reflecting radiation towards second reflection means, whereby the second reflection means reflect output radiation along an output path. The first and second reflection means are arranged at or in close proximity with the surface of the molten material such that during crystal growth they maintain a substantially constant position relative to the surface of the molten material. The apparatus may comprise support means for supporting the first and second reflection means, whereby the support means are arranged to float on the molten material. The apparatus may be a single crucible apparatus or a double crucible apparatus.

Abstract: Crystal growth can be initiated and controlled by dynamically controlled vapor diffusion or temperature change. In one aspect, the present invention uses a precisely controlled vapor diffusion approach to monitor and control protein crystal growth. The system utilizes a humidity sensor and various interfaces under computer control to effect virtually any evaporation rate from a number of different growth solutions simultaneously by means of an evaporative gas flow. A static laser light scattering sensor can be used to detect aggregation events and trigger a change in the evaporation rate for a growth solution. A control/follower configuration can be used to actively monitor one chamber and accurately control replicate chambers relative to the control chamber. In a second aspect, the invention exploits the varying solubility of proteins versus temperature to control the growth of protein crystals.

Abstract: A fully automated, high output robotic station for the crystallization of proteins and other biopolymers via the sitting drop vapor diffusion and micro-batch methods. This station performs microplate feeding, liquid aspiration, dilution, and dispensing, as well as microplate sealing and storage into a temperature controlled hotel. All functions are microprocessor controlled. The operator designs the process via graphical user interface, after which the station executes the process automatically to completion.

Abstract: The present invention was achieved in order to provide a method for pulling a single crystal, wherein a single crystal hanging portion makes it possible to pull even a heavy single crystal safely, a new cost related to a seed crystal is not caused by the use of a general and usual seed crystal, the time required for the process can be shortened by making the single crystal hanging portion dislocation-free at a high speed, and even a seed crystal containing a few dislocations can be made dislocation-free, so that a seed crystal to which a few dislocations were induced can be reused without replacement, and an apparatus for pulling a single crystal.

Abstract: A combinatorial molecular layer epitaxy apparatus is provided which includes a common chamber (22) having pressure therein controllable; one or more conveyable substrate heating units (36) having a substrate holder (48) for holding one or more substrates in the common chamber; and one or more process conducting chambers (24, 26, 28) having pressure therein controllable and provided to correspond to the substrate heating units.

Abstract: A silicon wafer is provided having controlled distribution of defects, in which denuded zones having a sufficient depth inward from the surface of the wafer are combined with a high gettering effect in a bulk region of the wafer. In the silicon wafer, oxygen precipitates, which act as intrinsic gettering sites, show vertical distribution. The oxygen precipitate concentration profile from the top to the bottom surfaces of the wafer includes first and second peaks at first and second predetermined depths from the top and bottom surfaces of the wafer, denuded zones between the top and bottom surfaces of the wafer and each of the first and second peaks, and a concave region between the first and second peaks, which corresponds to a bulk region of the wafer. For such an oxygen precipitate concentration profile, the wafer is exposed to a rapid thermal annealing process in a gas mixture atmosphere comprising ammonia (NH3) and argon (Ar) at temperatures below about 1200° C.

Abstract: SLH, CLH, and an output of the weight sensor enter a main control section to calculate MD, MDD, and WEL. The main control section makes up a negative-loop for stable automatic control. This section calculates GR(GL), SLC(GWD), SLC(MP), and SLC(WEL) for SL and CL control, and calculates crucible moving rate from GD(GL) and CI(MD), and determines SL and CL by using these parameters to control crystal-growing.

Abstract: A method and apparatus for growing single crystal of GaAs, etc uses the Czochralski techniques. Control of crystal (1) diameter is by a closed loop (9, 10, 24, 7, 6) control of melt (4) temperature in response to crystal weight signals (9) W or dW/dt. The invention injects a test signal St (22, 26) into the control loop and performs a signal processing (21), e.g. cross correlation, on St and crystal weight signal. Peak amplitude of correlation values is related to the growing crystal shape. This is used by comparison with reference values (24) to control the growing-out phase from seed diameter (16) to full diameter of the crystal (1).

Abstract: A method and system for controlling growth of a taper portion of a semiconductor single crystal based on the slope of the taper. A crystal drive unit pulls the growing crystal from a melt at a target pull rate that substantially follows an initial velocity profile for growing the taper. A controller calculates a taper slope measurement as a function of a change in crystal diameter relative to a change in crystal length. The controller then generates an error signal as a function of the difference between the taper slope measurement and a target taper slope and provides a pull rate correction to the crystal drive unit as a function of the error signal. In turn, the crystal drive unit adjusts the pull rate according to the pull rate correction to reduce the difference between the taper slope measurement and the target taper slope. The target taper slope is defined by a function having a generally exponential component and a generally linear component.

Abstract: A control method for use with a Czochralski crystal puller. The method includes pulling the growing crystal from the melt at a first target pull rate to grow a taper portion of the crystal and measuring the crystal diameter of the taper. The method also includes estimating a slope of the diameter as a function of a change in crystal diameter relative to time and the first target pull rate. The method further includes predicting a crystal diameter Di at which to initiate body growth from the taper as a function of the estimated slope. By increasing the pull rate to a second target pull rate when the measured crystal diameter reaches the predicted crystal diameter Di, the method controls growth of the crystal for transitioning from taper growth to body growth. The method also determines the second target pull rate as a function of the estimated slope when using a predefined diameter Di at which to initiate growth of the crystal body.

Abstract: A device for monitoring a melt for the production of crystals. A camera is provided which images at least portions of the surface of the contents of a crucible. An evaluating device is used to evaluate the camera's images with respect to solid and liquid portions of the surface of the crucible contents.

Abstract: The invention features a method of controlling the depth of a melt for or crystal growth. According to the method, an input signal is applied through a crucible and a material disposed within the crucible. An output signal generated in response to the input signal is measured. The output signal relates to the depth of the melt. An amount of the source material introduced into the melt is adjusted to maintain the depth of the melt at a substantially constant level using the output signal.

Abstract: A method and apparatus for controlling the growth of an oxide, such as a gate oxide, in a semiconductor device manufacturing process takes into consideration the ambient atmospheric pressure in order to reduce the variance in gate oxide thicknesses between wafer lots. The pressure in the oxide diffusion tube is maintained at a constant pressure near the ambient atmospheric pressure during the oxide diffusion process. Alternatively, the furnace time is changed from lot to lot as a function of changes in the ambient atmospheric pressure in order to maintain the gate oxide thickness at a constant value between wafer lots.

Abstract: In a conventional method, it is difficult to reject a stray light component with certainty, so that it is difficult to accurately measure the temperature of the melt surface. Since a temperature measuring device and a computing means are expensive, the cost of the measurement tends to be high. Modifications to an existing apparatus for pulling a single crystal are required, which is an inconvenience. In order to solve the above problems, a CCD camera is used for detecting the radiation light luminance distribution of the melt surface, the minimum radiation light luminance Lmin is determined based on the radiation light luminance distribution data measured using the CCD camera, and the temperature TS of the melt surface within an apparatus for pulling a single crystal is computed based on the minimum radiation light luminance Lmin.

Abstract: In the work crystal orientation adjusting method, the crystal orientations of a work 22 in the rotational direction and in the horizontal direction thereof are measured by an orientation measuring device 76. In accordance with the measured value of the crystal orientation of the work 22 in the rotational direction, the work 22 is rotated about the axis thereof to thereby adjust the crystal orientation of the work 22 in the rotational direction. On the outer surface of the work 22, there are put marks M1 and M2 indicating reference positions for adhesion of an auxiliary plate B which is used to cut the work 22. The auxiliary plate B is adhered to the outer peripheral surface of the work 22 based on the marks M1 and M2. A work mounting plate 53 is mounted onto a support base 40 to thereby support the work 22 on the support base 40.

Abstract: A method and system for determining melt level and reflector position in a Czochralski single crystal growing apparatus. The crystal growing apparatus has a heated crucible containing a silicon melt from which the crystal is pulled. The crystal growing apparatus also has a reflector positioned within the crucible with a central opening through which the crystal is pulled. A camera generates images of a portion of the reflector and a portion of a reflection of the reflector visible on the top surface of the melt. An image processor processes the images as a function of their pixel values to detect an edge of the reflector and an edge of the reflection in the images. A control circuit determines a distance from the camera to the reflector and a distance from the camera to the reflection based on the relative positions of the detected edges in the images.

Abstract: A process and a device will produce a cylindrical single crystal of semicuctor material with the smallest possible alignment error of the crystal lattice. A process for cutting semiconductor wafers from two or more such single crystals is by means of wire sawing. The process for producing the single crystal is as follows: (a) a single crystal with an alignment error of the crystal lattice equal to at most 1.5.degree.

Abstract: A device for controlling crystal growth processes which run through various process phases, for instance, melting or cool-down, and in which the shape of the crystal has different areas during growth, for instance, a neck and/or a shoulder. Certain process parameters and target values, as well as input values and output values, for instance, a certain gas pressure or a certain rotational speed, are also associated with each of these areas and phases. The linking of these parameters is accomplished by function generators or tables. With the aid of the control device, it is made possible to generate a specially adapted linking of the respectively necessary input and output parameters for each of the special process phases and crystal sections with an essentially uniform construction and a comprehensible structure.

Abstract: A delivery system and method for providing a gaseous chemical is provided. The system comprises a single bubbler 12 having a chamber 13 for containing a liquid chemical, at least one inlet tube 14 for providing a carrier gas to said chamber, and one outlet tube 16 for providing the gaseous chemical. A liquid chemical supply line 25 conveys the liquid chemical to said chamber. A bubbler is in contact with weight measuring device 24 for weighing the bubbler and generating an output signal responsive to the measured weight. A liquid chemical controller 20 is operatively coupled to said bubbler and said supply line for filling and continuously maintaining a preselected level of the liquid chemical in said chamber responsive to said output signal.

Abstract: A method for controlling the temperature of a substrate in a processing chamber. The processing chamber employs a heating control over at least two heating zones. Each heating zone is independently controllable according to a measured signal corresponding to the substrate temperature and a user-definable offset.

Abstract: An apparatus and a method for producing single crystal semiconductor particulate in near spherical shape and the particulate product so formed is accomplished by producing uniform, monosized, near spherical droplets; identifying the position of an undercooled droplet in a nucleation zone; and seeding the identified droplet in the nucleation zone to initiate single crystal growth in the droplet.

Abstract: A level detector detects the level of an approximately flat surface of a substance in a container. The level detector illuminates a portion of the surface, and detects the location of the illuminated portion on the surface. Based on detecting the location of the illuminated portion, the level detector generates a signal related to the level of the surface, which can represent the level of the surface in a direction perpendicular to the surface. A method for determining a level of a surface of a substance in a container includes illuminating a portion of the surface, detecting a location of the illuminated portion on the surface, and generating a signal related to the level of the surface based on the result of detecting the location of the illuminated portion.

Abstract: An object of the invention is to provide a single crystal clamping device and a single crystal supporting method. The single crystal clamping device does not become inclined and does not vibrate, and the center of the single crystal clamping device is congruous to the center of the growing single crystal.

Abstract: A method of and system for determining the melt-level in a crystal growing system. A rangefinder emits a signal to reflect off the melt. The reflected signal is directed to a retroreflector. The retroreflector redirects the signal along a parallel path back to the melt surface. The redirected signal is reflected off the melt surface back to the rangefinder, where it is analyzed to determine the distance traveled by the signal. From this, changes in melt-level are determined and the melt-level may be appropriately controlled.

Abstract: The present invention utilizes a weighing detector as well as a weighing diameter-controlling method in a crystal-pulling apparatus using a wire method for measuring the crystal weight in accuracy. A pulling wire 4 and a wire rolling means 20, having a wire rolling drum 21, suspended on a weighing detector 2 in a freely rotating way. Accordingly, in the weighing detector 2, the weights of the pulling wire 4 and the wire rolling means 20 are served to balance the loading weight. In addition, the vertical central line 6 of the weighing detector, the rotating axis of the wire rolling drum 21, the rotating axis of the wire rolling means 20, and the axis of pulling crystals are all consistent. Consequently, the whole gravity center is located on the vertical central line of the weighing detector 2. When pulling the single crystals at the same time as rolling the wire, the gravity center of the wire rolling means is shifted merely depending on the diameter variation at the pulling wire.

Abstract: Large diameter single crystals of aluminum nitride (AlN) are grown isotropically by injecting a nitrogen-containing gas into liquid aluminum at elevated temperatures. A seed crystal that is maintained at a temperature below that of the surrounding liquid aluminum is pulled from the melt, while the AlN that is formed in the melt is deposited on the seed crystal. An apparatus for carrying out the method is also disclosed.

Abstract: In the pulling of a single crystal, hitherto, it is difficult to reduce the OSF density while the deformation rate is held down within the tolerance, so that it is difficult to improve the quality and productivity. In the present invention, a deviation from a true circle in each part of a single crystal S.sub.n-1 which was pulled in the preceding batch is found and the pulling speed pattern f.sub.pn-1 (L.sub.1) in the preceding batch is updated (f.sub.pn (L.sub.1)) before a single crystal S.sub.n is pulled, in order to pull the single crystal as fast as possible so that the OSF density is small while the deviation is within the tolerance.

Abstract: A heat shield for use in a crystal puller around a monocrystalline ingot grown out of a crucible in the crystal puller filled with molten semiconductor source material. The heat shield includes a reflector having a central opening sized and shaped for surrounding the ingot as the ingot is grown to reduce heat transfer from the crucible. The reflector is adapted to be supported in the crystal puller between the molten material and a camera aimed toward at three separate points on a meniscus formed between the ingot and an upper surface of the molten material. The reflector has at least three passages extending through the reflector. Each of the passages is located along an imaginary line extending between the camera and one of the points on the meniscus. This permits the camera to view the points so the positions of the points can be determined by the camera for calculating the diameter of the ingot while minimizing heat loss through the passages.

Abstract: An apparatus for weighing single crystals during Czochralski crystal growing processes includes a pivotal elongated member such as a beam, a contact element and a load sensor. The load sensor can be mounted to at least one of the elongated member and a support surface of a crystal growing vessel. The beam is attached to a lift for pulling single crystals from a melt. During crystal growing, the weight of the grown crystal causes increased loading along the elongated member such that the contact element exerts an increasing force on the load sensor. The contact element and load sensor have respective contact surfaces which are shaped such that the force exerted on the load sensor corresponds substantially to the weight of grown single crystal. Typically, at least one of the contact surfaces is a rolling surface.

Abstract: A silicon ingot is manufactured in a hot zone furnace by pulling the ingot from a silicon melt in the hot zone furnace in an axial direction, at a pull rate profile of the ingot from the silicon melt in the hot zone furnace that is sufficiently high so as to prevent interstitial agglomerates but is sufficiently low so as to confine vacancy agglomerates to a vacancy rich region at the axis of the ingot. The ingot so pulled is sliced into a plurality of semi-pure wafers each having a vacancy rich region at the center thereof that includes vacancy agglomerates and a pure region between the vacancy rich region and the wafer edge that is free of vacancy agglomerates and interstitial agglomerates.

Abstract: A single crystal is pulled to a length at which the beginning of the body of the single crystal is assumed sufficiently to have been cooled down to a temperature below 1000.degree. C.; then the single crystal being pulled is detached from the molten silicon by pulling it at a speed high enough to cut it out from the molten silicon. Then oxygen precipitation heat-treatment is performed on the single crystal to locate the portion of AOP. AOP arises at the boundary of grown-in defects being formed zone while the single crystal passes through 1100.degree. C., and the position is at about 1100.degree. C. immediately before, detaching the single crystal out from the molten silicon. Therefore, the position at temperature 1100.degree. C. in the single crystal immediately before detaching the single crystal out from the molten silicon are known, then the temperature distributions of the single crystal immediately before detaching it out from the molten silicon can be decided easily.

Abstract: A process is disclosed for continuously producing a single crystal by drawing downwardly a melt of a single crystal raw material, wherein a single crystal body grown from the melt is continuously pulled downwardly, and a plurality of single crystal products are continuously formed by intermittently cutting the single crystal body being downwardly moved.

Abstract: A method and apparatus for measuring and controlling the diameter of a silicon single crystal ingot grown by the Czochralski technique using dual optical cameras focused on diametrically opposed edges of the meniscus of the growing crystal to measure the actual crystal diameter. The crystal growth parameters can be adjusted in response to the measured diameter to maintain a constant, desired diameter. The method and apparatus of the invention provide a continuous accurate measurement of the crystal diameter and avoid unnecessary adjustments to the crystal growth conditions resulting from diameter measurement errors due to the effects of crystal orbit, melt level changes and camera angle variations.

Abstract: An apparatus for producing crystals of a macromolecule in microgravity includes a container 100 which is made of a material having a low thermal conductivity and an open end. A thermally conductive lid 102 is fitted on the open end of the container to close the container and a heat source/sink 114 is provided in thermal contact with the thermally conductive lid to generate a temperature gradient within the container. When a solution of the macromolecule is provided in the container, the temperature gradient induces and control the crystallization of the macromolecule. In operation, a temperature ramp from a start temperature to an end temperature is used to maintain and control the temperature gradient.

Abstract: An apparatus and a method capable of automatically adjusting an initial position of the surface of a melt without an operator are provided. In a single crystal puller using a wire as a suspender for a seed crystal for growing a single crystal of silicon or the like according to the CZ method, a reference position of the seed crystal is detected, the wire is unwound to lower the end of the wire to a position higher by a distance W-X from the reference position and then pulled upward above said reference position to correct the wire for an extension due to the weight of a single crystal attached thereto. Also, the wire is left above a melt for about ten minutes to provide a constant amount of extension to the wire due to heat of the melt. These operations are automatically performed.

Abstract: A temperature sensor 42 is provided in a furnace 11, measuring temperature above a molten liquid 24 put in a crucible 12 to check proceedings of evaporation of oxygen vaporized from a free surface 44 of the molten liquid 24. From the data, and considering the relation with the oxygen dissolved into the crucible 12, the oxygen concentration in the molten liquid 24 can be found and the amount of oxygen taken into a single silicon crystal 40 pulled up from the molten liquid 24 can be figured out.

Abstract: A method and apparatus for dynamically controlling the crystallization of proteins including a crystallization chamber or chambers for holding a protein in a salt solution, one or more salt solution chambers, two communication passages respectively coupling the crystallization chamber with each of the salt solution chambers, and transfer mechanisms configured to respectively transfer salt solution between each of the salt solution chambers and the crystallization chamber. The transfer mechanisms are interlocked to maintain the volume of salt solution in the crystallization chamber substantially constant. Salt solution of different concentrations is transferred into and out of the crystallization chamber to adjust the salt concentration in the crystallization chamber to achieve precise control of the crystallization process.

Abstract: A CCD camera is used to measure the diameter of a growing crystal through optical recognition of the luminous ring at a crystal-melt interface. The result is an optical diameter control method and apparatus that eliminates the negative effects of orbit, melt-level and incorrect camera angle. The CCD camera is positioned such that it focuses on a full half of the circumference of the crystal as it is being grown. An automatic control system uses two points diametrically opposed on the crystal to measure the diameter, and a third point on the crystal closest to the camera to compute the melt level error. The automatic control system controls a crucible height and a crystal pull rate to optimize crystal diameter.

Abstract: According to the present invention, in the growth of an oxide single crystal or a compound semiconductor single crystal such as GaAs single crystal by the CZ method or LEC method, the tendency of concave solid-liquid interface shape at the periphery of the growing crystal can be suppressed to prevent polycrystallization without localized heating of the solid-liquid interface, while controlling the diameter of the growing crystal even when using a crucible with a larger diameter, thus improving the yield of crystal on a commercial scale. In the invention, the end of a cylindrical body having an inner diameter of larger than the predetermined diameter of straight part of the growing crystal is immersed in the raw material melt or liquid encapsulant and the crystal is pulled while preventing the shape of the solid-liquid interface from becoming concave by controlling the rotation rate of at least one of a crucible holding the raw material melt, the growing crystal and cylindrical body.

Abstract: The invention relates to a method for detecting torsional oscillations among abnormal oscillations occurring during the course of pulling of a single crystal, and also to a method for manufacturing a silicon single crystal using this method. Torsional oscillations are detected by detecting seam portions of a silicon single crystal being rotated with a camera device, memorizing time intervals of the signals outputted by detection of the seam portions, calculating an average value of the time intervals, comparing a time interval of freshly outputted signals with the average value, and deciding occurrence of torsional oscillations in the single crystal when the resulting deviation exceeds a predetermined value. When this method is adopted for pulling of a silicon single crystal, the single crystal is prevented from generating a dislocation and from dropping owing to the breakage at a neck portion thereof. Thus, the silicon single crystal can be manufactured with an improved yield and with a high efficiency.

Abstract: A crystal growing system has a plurality of crystal growing stations which are each comprised of a crucible, furnace, vacuum chambers and related equipment which is continuously used during the actual crystal growing process. A central process control console is connected to each crystal growing station so that growing parameters for all stations can be controlled from a single location. A common server unit services all crystal growing stations. The server unit is movable so that it can be positioned at each station both prior to initiating crystal formation and subsequent to completing crystal formation in order to service the station before and after the crystal growing operation. The server unit comprises a movable support structure which can be rolled along a set of tracks to be positioned sequentially adjacent to each station. The server unit includes a main hoist constructed to move a receiving chamber, either alone or together with a transition chamber.

Abstract: An integrated dual beam multi-channel optical-based flux monitor and method of monitoring atomic absorption of a plurality of atomic species during epitaxial deposition. Light from multiple sources is simultaneously passed through a region of deposition of material such that atomic absorption takes place. The light that passed through the region is then compared to light in a reference arm that did not pass through a region of atomic absorption. From this comparison the deposition of an epitaxial layer can be carefully monitored and controlled.

Abstract: A weight control in diameter method by using a load cell is applied to a wire-single crystal silicon pulling mechanism, such that the weight of single crystal silicon can be correctly measured, thereby obtaining superior control in diameter and reducing the cost of manufacturing the single crystal silicon.

Abstract: A method for tuning a purge system of a barrel reactor used for chemical vapor deposition of layers of material on semiconductor wafers includes placement of rotameters and adjustable flow-control valves in each of multiple purge lines. The flow rates of purge gas in the lines are monitored and the valves adjusted to make sure that the flow is all in a direction toward the barrel reactor, so that there is no siphon effect to draw reactant gases into the purge system. The oxygen presence in the barrel reactor is also monitored and the flow rates adjusted to reduce the oxygen presence. The flow rates are adjusted to assure full purge of reactant gases from the barrel reactor after a chemical vapor deposition cycle is complete. Reduced levels of metals contamination in layers of deposited material are achieved.

Abstract: A radio frequency automatic identification system detects targets which include solid resonators resonating at several frequencies, attributing information to the frequencies at which the target resonates. Preferred resonators are quartz crystals, which may be made by a process of heating quartz to soften it and cutting crystals to approximate size and resonant frequency. Resonators produced by such a process are measured to determine their actual resonant frequency, and preferably the crystals are sorted into predetermined frequency windows in accordance with their measured resonant frequency. A set of resonators having frequencies corresponding to predetermined data is selected from the sorted groups of resonators and incorporated into a target. The preferred target is an ink-like material having a plurality of resonators disposed in a matrix which is radio frequency transparent at the frequency of interest.

Abstract: An apparatus and a method capable of automatically adjusting an initial position of the surface of a melt without an operator are provided. In a single crystal puller using a wire as a suspender for a seed crystal for growing a single crystal of silicon or the like according to the CZ method, a reference position of the seed crystal is detected, the wire is unwound to lower the end of the wire to a position higher by a distance W-X from the reference position and then pulled upward above said reference position to correct the wire for an extension due to the weight of a single crystal attached thereto. Also, the wire is left above a melt for about ten minutes to provide a constant amount of extension to the wire due to heat of the melt These operations are automatically performed.

Abstract: A method, mechanisms and jig for handling a member of a crystal pulling apparatus are disclosed. The crystal pulling apparatus grows a single crystal from a melt of a crystalline material by a CZ method. Handling of a graphite crucible or the like of the crystal pulling apparatus, including a vertical moving operation, a swinging operation, or the like, is performed using a crane and a lifting jig. This makes it possible to readily move the member of the crystal pulling apparatus vertically and otherwise without relying on manual labor.

Abstract: The object of this invention is to provide a method and a device for manufacturing semiconductor single crystals by the CZ method in response to the increase in the weight of semiconductor single crystal produced. The necked portion formed beneath the reduced portion can be held and the single crystal under lifting can be re-melted.