Abstract: Provided is a method that allows growing a single crystal of silicon carbide on an off-substrate of silicon carbide while suppressing surface roughening. The method for producing a crystal of silicon carbide includes rotating a seed crystal of silicon carbide while bringing the seed crystal into contact with a starting material solution containing silicon and carbon. A crystal growth surface of the seed crystal has an off-angle, and the position of a rotation center of the seed crystal lies downstream of the central position of the seed crystal in a step flow direction that is a formation direction of the off-angle.

Abstract: The apparatus has a crucible for storing a solution; an inner container for storing a crucible; a heating container for storing the inner container, the heating container including heating elements, a container body provided with the heating elements and a lid combined with the container body; and a pressure vessel for storing the heating container and for charging an atmosphere comprising at least nitrogen gas. The lid also has a fitting surface to the container body that is inclined to a horizontal plane.

Abstract: For manufacturing a monocrystal, a monocrystal pulling-up device controls pressure within a flow straightening cylinder to be from 33331 Pa to 79993 Pa and a flow velocity of inert gas in the cylinder to be from 0.06 m/sec to 0.31 m/sec (0.005 to 0.056 SL/min·cm2) during a post-addition-pre-growth period. By controlling the flow velocity of the inert gas to be in the above-described range during the post-addition-pre-growth period, the inert gas flows smoothly even when the pressure within the cylinder is relatively high. Evaporation of a volatile dopant because of a reverse flow of the inert gas can be restrained. The volatile dopant can be prevented from adhering to the flow straightening cylinder in an amorphous state, and the volatile dopant can be prevented from dropping into a melt or sticking on the melt while growing a crystal. Foulings can be easily removed.

Abstract: This invention relates to a system and a method of use for large ceramic member support and manipulation at elevated temperatures in non-oxidizing atmospheres, such as using carbon-carbon composite materials for producing high purity silicon in the manufacture of solar modules. The high temperature apparatus of this invention includes one or more support ribs, one or more cross braces in combination with the one or more support ribs, and a shaped support liner positionable upon the one or more support ribs and the one or more cross braces.

Abstract: A method and apparatus for growing a semiconductor crystal include pulling the semiconductor crystal from melt at a pull speed and modulating the pull speed by combining a periodic pull speed with an average speed. The modulation of the pull speed allows in-situ determination of characteristic temperature gradients in the melt and in the crystal during crystal formation. The temperature gradients may be used to control relevant process parameters that affect morphological stability or intrinsic material properties in the finished crystal such as for instance the target pull speed of the crystal or the melt gap, which determines the thermal gradient in the crystal during growth.

Abstract: A device grows sapphire ingots by dipping a sapphire seed into molten aluminum oxide and lifting and spinning the sapphire seed from the molten aluminum oxide to cause the molten aluminum oxide adhering to the sapphire. Meanwhile, the device controls temperature such that the molten aluminum oxide is crystallized on the sapphire seed which is gradually cooled down to a room temperature. The device also includes a housing and air controller for providing desire air conditions for growing the sapphire ingot.

Abstract: Computer controlled quality control methods for manufacturing high purity polycrystalline granules are introduced. Polycrystalline silicon granules are sampled and converted into single crystal specimen in computer controlled system, eliminating the need of human operator in controlling the processing parameters. Single crystal silicon test samples, then characterized by FTIR and other standard analysis, are therefore more representative of the starting granular silicon.

Abstract: A face area is detected from an image captured by an image pickup device, pixel values of the image are adjusted based on information concerning the detected face area, a person area is detected from the adjusted image, and the detected face area is integrated with the detected person area. With this configuration, it is possible to accurately detect an object even in a case, for example, where the brightness is varied.

Abstract: An apparatus for producing single crystal silicon comprising: an induction heating coil that is disposed around the polycrystalline silicon rod for fusing the polycrystalline silicon rod; an exothermic ring that has a quartz-coated member covering the conductive member; a support member that supports the exothermic ring and passes through a wall of the housing in a rotatable manner; an operating device that rotates the support member and reciprocates the exothermic ring between a heating position where the exothermic ring is positioned close to the induction heating coil and a stand-by position where the exothermic ring is receded from the heating position; a sealing member that is provided between the wall of the housing and the support member and maintains the hermitic therebetween; and a cooling flow path that is formed in the support member and flows a cooling medium.

Abstract: A Czochralski growth system comprising a growth chamber, an isolation valve, a feed chamber containing feedstock, and a feeder is described. The isolation valve is disposed in at least one side wall of the growth chamber, and the feed chamber is vacuum sealed to the growth chamber through the isolation valve. The feeder is insertable into the growth chamber through the isolation valve and supplies the feedstock into the growth chamber. Preferably this system can be used for producing silicon ingots using a continuous Czochralski method.

Abstract: Carriers or holders for holding microfluidic devices are provided. Some of the carriers that are provided include a hydration control device and/or a source of controlled fluid pressure to facilitate use of the carrier in conducting various types of analyses.

Abstract: A method for growing III-V nitride films having an N-face or M-plane using an ammonothermal growth technique. The method comprises using an autoclave, heating the autoclave, and introducing ammonia into the autoclave to produce smooth N-face or M-plane Gallium Nitride films and bulk GaN.

Abstract: A single-crystal manufacturing apparatus comprising at least: a main chamber configured to accommodate a crucible; a pulling chamber continuously provided above the main chamber, the pulling chamber into which a grown single crystal is pulled and accommodated; a gas inlet provided in the pulling chamber; a gas flow-guide cylinder downwardly extending from a ceiling of the main chamber; and a heat-insulating ring upwardly extending from a lower end portion of the gas flow-guide cylinder with a diameter of the heat-insulating ring increased so as to surround an outside of the gas flow-guide cylinder, wherein at least one window is provided in a region between 50 and 200 mm from a lower end of the gas flow-guide cylinder, and an opening area of the window accounts for 50% or more of a surface area of the region between 50 and 200 mm from the lower end of the gas flow-guide cylinder.

Abstract: A crystal puller for growing monocrystalline ingots includes a side heater adjacent a crucible for heating the crucible and a melt heat exchanger sized and shaped for surrounding the ingot and disposed adjacent a surface of the melt. The heat exchanger includes a heat source having an area for radiating heat to the melt for controlling heat transfer at the upper surface of the melt. The melt heat exchanger is adapted to reduce heat loss at the exposed upper surface portion. Methods for growing single crystal silicon crystals having desired defect characteristics are disclosed.

Abstract: Disclosed therein is an apparatus for producing a polycrystalline silicon ingot for a solar cell, which has uniform crystal grains formed by solidifying silicon melted in a crucible using a cooling plate. The polycrystalline silicon ingot producing apparatus includes: a crucible for melting silicon; conveying shafts for adjusting the height of the crucible; heaters for heating the crucible; and a cooling plate located below the crucible for cooling the crucible.

Abstract: Provided is a seed crystal fixing device 1 for fixing a seed crystal 9 to a seed crystal placing part 3 of a reaction vessel with an adhesive interposed in between. The seed crystal fixing device 1 includes: a chamber 10 capable of installing the seed crystal placing part 3 in the inside thereof; and a flexible pouched body 16 placed on an upper surface of the chamber 10. The flexible pouched body 16 is inflated with a delivery of gas and is deflated with an exhaust of the gas. The flexible pouched body 16 is configured to come into contact with a surface of the seed crystal 9 when inflated, and thereby applies pressure uniformly across the entire surface of the seed crystal 9. The upper surface of the chamber 10 forms convex shape towards the seed crystal placing part 3, and thereby uniform press-bonding of the seed crystal 9 to the seed crystal placing part 3 is accomplished.

Abstract: Systems and methods are disclosed for crystal growth including features of reducing micropit cavity density in grown germanium crystals. In one exemplary implementation, there is provided a method of inserting an ampoule with raw material into a furnace having a heating source, growing a crystal using a vertical growth process wherein movement of a crystallizing temperature gradient relative to the raw material/crucible is achieved to melt the raw material, and growing, at a predetermined crystal growth length, the material to achieve a monocrystalline crystal, wherein monocrystalline ingots having reduced micro-pit densities are reproducibly provided.

Abstract: A silicon casting apparatus for producing polycrystal silicon ingot by heating a silicon melt (8) held in a mold (4) from above by a heater (3) and cooling it from below while changing the heat exchange area of a heat exchange region (HE), defined between a pedestal (5) having the mold (4) placed thereon and a bottom cooling member (6), in such a manner as to keep pace with the rise of the solid-liquid interface of the silicon melt (8), thereby causing unidirectional solidification upward along the mold (4); and a method of producing polycrystal silicon ingot using such apparatus. According to this production method, the temperature gradient given to the silicon melt (8) can be maintained at constant by adjusting the heat exchange area, so that polycrystal silicon ingot having good characteristics can be produced with good reproducibility.

Abstract: A crystal manufacturing apparatus for manufacturing a group III nitride crystal includes a crucible that holds a mixed molten liquid including an alkali metal and a group III metal; a reaction vessel accommodating the crucible in the reaction vessel; a heating device that heats the crucible with the reaction vessel; a holding vessel having a lid that is capable of opening and closing, accommodating the reaction vessel and the heating device in the holding vessel; a sealed vessel accommodating the holding vessel in the sealed vessel, having an operating device that enables opening the lid of the holding vessel for supplying source materials into the crucible and taking out a manufactured GaN crystal under a sealed condition, and closing the lid of the holding vessel that is sealed in the sealed vessel, the sealed vessel including an inert gas atmosphere or a nitrogen atmosphere; and a gas supplying device for supplying a nitrogen gas to the mixed molten liquid through each of the vessels.

Abstract: A controlled heat extraction system and method thereof is disclosed. In one embodiment, a system includes a housing to form a chamber. The system further includes a seed cooling component adapted to support a bottom of the crucible and to receive a coolant fluid to cool the supported portion of the crucible. The system also includes at least one heating element substantially surrounding the seed cooling component and the crucible to heat the crucible, where the seed cooling component along with the crucible is movable relative to the at least one heating element. Furthermore, the system includes an insulating element substantially surrounding the crucible, the seed cooling component and the at least one heating element. Additionally, the system includes a gradient control device (GCD) movable relative to the insulating element, the at least one heating element, the seed cooling component and the crucible over a range of positions.

Abstract: The invention relates to the production of a cable rotating head, which is devoid of an abrasion ring, for a Czochralski-crystal drawing system which is used to drive a drawing cord in an azimuthal and vertical manner and the nucleus of a crystal is fixed therein. According to the invention, the cord rotating head comprises a cord winding mechanism which can be supported by a vertical hollow shaft, through which the drawing cord is suspended in the crystal drawing system, and the cord rotating head is rotationally mounted about the axis thereof and can be offset by a rotation motor, which is secured to the crystal drawing system, together with the cord winding mechanism and the drawing cord in a rotational movement, and said vertical hollow shaft is surrounded in a coaxial manner by a double toothed gear which is rotationally mounted opposite to the hollow shaft and can be driven by a drawing motor which is secured to the crystal drawing system.

Abstract: A method may produce a resonant cavity light emitting device. A seed gallium nitride crystal and a source material in a nitrogen-containing superheated fluid may provide a medium for mass transport of gallium nitride precursors therebetween. A seed crystal surface may be prepared by applying a first thermal profile between the seed gallium nitride crystal and the source material. Gallium nitride material may be grown on the prepared surface of the seed gallium nitride crystal by applying a second thermal profile between the seed gallium nitride crystal and the source material while the seed gallium nitride crystal and the source material are in the nitrogen-containing superheated fluid. A stack of group III-nitride layers may be deposited on the single-crystal gallium nitride substrate. The stack may include a first mirror sub-stack and an active region adaptable for fabrication into one or more resonant cavity light emitting devices.

Abstract: An apparatus for producing single crystal silicon comprising: an induction heating coil that is disposed around the polycrystalline silicon rod for fusing the polycrystalline silicon rod; an exothermic ring that has a quartz-coated member covering the conductive member; a support member that supports the exothermic ring and passes through a wall of the housing in a rotatable manner; an operating device that rotates the support member and reciprocates the exothermic ring between a heating position where the exothermic ring is positioned close to the induction heating coil and a stand-by position where the exothermic ring is receded from the heating position; a sealing member that is provided between the wall of the housing and the support member and maintains the hermitic therebetween; and a cooling flow path that is formed in the support member and flows a cooling medium.

Abstract: The invention relates to the field of CdTe or CdZnTe single crystal production and to an improved solid-phase method of obtaining large CdTe or CdZnTe crystals having an excellent crystalline structure.

Abstract: A seed crystal fixing apparatus for fixing the seed crystal on the seed crystal setting part of a reaction vessel with interposition of the adhesive, has a chamber configured to place the seed crystal setting part and form a hermetic atmosphere within the chamber; and a pressure part placed within the chamber for uniformly applying a pressure on the entire surface of the seed crystal.

Abstract: The disclosure relates to an apparatus and a method for producing a single crystal of semiconductor material. The apparatus comprises a chamber and a crucible which is arranged in the chamber and is enclosed by a crucible heater, a radiation shield for shielding a growing single crystal and thermal insulation between the crucible heater and an inner wall of the chamber. The apparatus may include a resilient seal which seals a gap between the inner wall and the thermal insulation and forms an obstacle for the transport of gaseous iron carbonyls to the single crystal. The disclosure also relates to a method for producing a single crystal of semiconductor material by using the apparatus, the single crystal which is produced and a semiconductor wafer cut therefrom.

Abstract: A method for manufacturing a single crystal includes the steps of: flowing a raw material gas toward a seed crystal in a reactive chamber so that the single crystal grows from the seed crystal; controlling the raw material gas by a gas flow control member having a cylindrical shape; passing the raw material gas through a clearance between the seed crystal and an inner wall of the gas flow control member; and flowing a part of the raw material gas to bypass the seed crystal. The method provides the single crystal having good quality.

Abstract: A manufacturing apparatus of Group III nitride crystals and a method for manufacturing Group III nitride crystals are provided, by which high quality crystals can be manufactured. For instance, crystals are grown using the apparatus of the present invention as follows. A crystal raw material (131) and gas containing nitrogen are introduced into a reactor vessel (120), to which heat is applied by a heater (110), and crystals are grown in an atmosphere of pressure applied thereto. The gas is introduced from a gas supplying device (180) to the reactor vessel (120) through a gas inlet of the reactor vessel, and then is exhausted to the inside of a pressure-resistant vessel (102) through a gas outlet of the reactor vessel. Since the gas is introduced directly to the reactor vessel (120) without passing through the pressure-resistant vessel (102), the mixture of impurities attached to the pressure-resistant vessel (102) and the like into the site of the crystal growth can be prevented.

Abstract: A vapor-phase growth apparatus includes: at least a reaction furnace which is hermetically closable, a wafer container which is disposed in the reaction furnace, for disposing a wafer at a predetermined position, a gas supply member for supplying a source gas toward the wafer, and a heating member for heating the wafer, wherein the apparatus is designed to form a grown film on a front surface of the wafer by supplying the source gas in a high temperature state while the heating member heats the wafer in the reaction furnace through the wafer container. The wafer container is made of a single material or a single member, and has a ratio R2/R1, which is not less than 0.4 to not more than 1.0, where R1 is a heat resistance for a heat transfer route from a rear surface of the wafer container toward the front surface of the wafer, and R2 is a heat resistance for a heat transfer route from the rear surface of the wafer container toward a front surface of the wafer container.

Abstract: It is an object of the present invention to provide a pulling-down apparatus that can breed a crystal having good characteristics of scintillation. The apparatus retains in a container that can control an atmosphere a melting pot having a narrow hole at the bottom side thereof, an induction heating device, and a seed-holding device that holds a seed and is pulled down so that a crystal formed successively to the seed is pulled down. Concurrently, imaging devices are arranged that can pick up images of a solid-liquid interface between the crystal and a melt material, from different directions, and the seed-holding device can be travel along directions perpendicular to respective image pickup directions in a horizontal plane.

Abstract: A method for a growing solid-state, spectrometer grade II-VI crystal using a high-pressure hydrothermal process including the following steps: positioning seed crystals in a growth zone of a reactor chamber; positioning crystal nutrient material in the nutrient zone of the chamber; filling the reactor with a solvent fluid; heating and pressuring the chamber until at least a portion of the nutrient material dissolves in the solvent and the solvent becomes supercritical in the nutrient zone; transporting supercritical from the nutrient zone to the growth zone, and growing the seed crystals as nutrients from the supercritical fluid deposit on the crystals.

Abstract: A unibody, multi-piece crucible for use in for use in elemental purification, compounding, and growth of semi-conductor crystals, e.g., in the process of molecular beam epitaxy (MBE) for melting silicon and the like at high temperature. The crucible has an outer coating layer that fixedly joins the multi pieces making up the crucible. The invention also provides a method for making a unibody containing structure comprising pyrolytic boron nitride having a negative draft, which method obviates the need of complicated overhang structure of graphite mandrels or the removal of the graphite mandrels by burning at high temperatures.

Abstract: Disclosed therein is an apparatus for producing a polycrystalline silicon ingot for a solar cell, which has uniform crystal grains formed by solidifying silicon melted in a crucible using a cooling plate. The polycrystalline silicon ingot producing apparatus includes: a crucible for melting silicon; conveying shafts for adjusting the height of the crucible; heaters for heating the crucible; and a cooling plate located below the crucible for cooling the crucible.

Abstract: The disclosure relates to an apparatus and a method for producing a single crystal of semiconductor material. The apparatus comprises a chamber and a crucible which is arranged in the chamber and is enclosed by a crucible heater, a radiation shield for shielding a growing single crystal and thermal insulation between the crucible heater and an inner wall of the chamber. The apparatus may include a resilient seal which seals a gap between the inner wall and the thermal insulation and forms an obstacle for the transport of gaseous iron carbonyls to the single crystal. The disclosure also relates to a method for producing a single crystal of semiconductor material by using the apparatus, the single crystal which is produced and a semiconductor wafer cut therefrom.

Abstract: A silicon single crystal growing apparatus supplemented with a low melting point dopant feeding instrument and a low melting point dopant feeding method thereof for producing a heavily doped silicon single crystal with a dopant of low melting point. The apparatus includes a quartz crucible containing molten silicon liquid, a heating unit supplying the quartz crucible with a radiant heat, a crystal pulling lifter pulling up a silicon single crystal from a molten silicon liquid contained in the quartz crucible, and a low melting point dopant feeding instrument. The low melting point dopant feeding instrument includes a sidewall portion, an upper portion, and an open bottom portion with net-like structure having many holes, the sidewall and upper portions being vacuum-tight sealed.

Abstract: A crucible is held in a closed position when the crucible is at a certain temperature. A temperature sensitive member expands differently in response to heat than other portions of the crucible. When the temperature of the temperature sensitive member is increased, the temperature sensitive member expands an amount different than do other portions of the crucible and thereby causes the crucible to open.

Abstract: A process is disclosed for continuously producing a single crystal by drawing downwardly a melt of a single crystal raw material, wherein a single crystal body grown from the melt is continuously pulled downwardly, and a plurality of single crystal products are continuously formed by intermittently cutting the single crystal body being downwardly moved.

Abstract: The object of the present invention is to achieve reliable and safe pulling operation of a single crystal having large diameter and heavy weight in a chamber with reduced pressure. The semiconductor manufacturing apparatus of the invention comprises a seed crystal lift mechanism for holding a seed crystal and for moving it up and down, and a single crystal gripping mechanism for gripping a constricted portion of a single crystal formed, whereby the apparatus comprises an accommodation container 10a for accommodating at least a driving unit 14 of the seed crystal lift mechanism and at least a driving unit 15 of the single crystal gripping mechanism, and further accommodation container lift mechanisms 3 and 4 for moving the accommodation container up and down. The accommodation container may be designed in heat-insulating structure, or a cooling means for cooling inside the accommodation container may be further provided.

Abstract: For the oriented solidification of molten silicon to form an ingot in a bottomless crystallization chamber (9, 41) with a cooling body (11), which can be lowered relative to the chamber, the flat bottom surface of a seed body (25) of solid silicon is laid on the surface of the cooling body. The top surface of the seed body (25) is melted, and the ingot is grown on top of it as the cooling body is lowered by relative motion with respect to the crystallization chamber (9, 41) at a rate which is dependent on the supply of additional silicon and the solidification rate. For the purpose of producing large ingots with a coarsely crystalline to monocrystalline structure, a seed body (25) with a crystalline structure selected from the group ranging from coarsely crystalline to monocrystalline is used. Either lump silicon is placed on top of the seed body (25) and melted by induction, or molten silicon is produced in a forehearth (37) and poured onto the seed body (25). The seed body (25) has a thickness of 0.

Abstract: In a device for handling heavy components of a crystal puller according to the Czochralski method, a supporting beam that can be pivoted about one vertical leg of a supporting frame and vertically adjusted includes holding claws for accommodating components or auxiliary devices. Profile rails, on which a carriage can be laterally displaced, are arranged perpendicular to the supporting beam. The carriage can be connected to a receptacle for gripping and holding the crystal.

Abstract: A single crystal producing apparatus to be used for raising the single crystals by a CZ method. A cylindrical portion of a main chamber of the single crystal producing apparatus can be separated from the apparatus. Hot zone components can be retained within the cylindrical portion. After the pulling up operation, the cylindrical portion is separated from the apparatus with the hot zone components being engaged with within the cylindrical portion and is carried to another chamber. In another chamber, an overhauling, reproducing and assembling operations of the hot components can be conducted. In the single crystal producing apparatus, a cylindrical portion which goes through an assembling operation of the hot zone components in another chamber is engaged with the apparatus, and the next pulling up operation is conducted. Time required to the next pulling up operation is shortened. The dust amount within the pulling up chamber is reduced.

Abstract: A device and method for producing single crystals by the Czohralski method can control the temperature distribution and thermal history of single crystals to improve the production efficiency and quality of single crystals. The device includes a cylinder coaxially surrounding a single crystal pulling rod, having an upper end airtightly connected to the ceiling of a pulling chamber and a lower end close to the surface of a melt in a crucible. A heat insulating element is attached to the lower end of the cylinder, and is surrounded by a surface of the crystal, the inside wall of the crucible and the surface of the melt. The heat insulating element is sized to occupy 30-95% by volume of the space above the melt, and the space has a height corresponding to the radius of the crystal.

Abstract: The uniformity of solid crystals grown by pulling a seed crystal from a molten charge material in a crucible is increased by eliminating vibration by supporting a housing for the solid crystal on a vibration isolator which rests on a supporting floor. Vibration isolators may also be placed between a crucible lift and rotation mechanism and the supporting floor. The crystal pull head for pulling the seed crystal also can be isolated from the remainder of the apparatus by vibration isolators.

Abstract: A crystal-growing machine (10) includes a furnace chamber (12) and two loading chambers (14 and 16) that permit simultaneous processing operations. At least one of the two loading chambers (14 and 16) includes a lifting mechanism (36) for pulling a crystal (40) from a melt (20) in the furnace chamber (12). A positioning mechanism (60) disengages one of the loading chambers (14 and 16) from the furnace chamber (12) for cooling the crystal (40) in an evacuated environment and engages the other of the loading chambers (14 and 16) for simultaneously recharging the melt (20) or starting growth of another crystal.

Abstract: A puller apparatus for a Czochralski crystal puller system is provided which includes a primary puller chuck and a secondary puller chuck. The primary puller chuck is attached to a seed crystal. The secondary puller chuck is shaped to enclose and retain a portion of a growing crystal so that the growing crystal can be pulled by the secondary puller chuck.

Abstract: An apparatus for producing a single crystal by the Czochralski method is disclosed in which an exhaust system is provided with a water sealing bubbler. On the upstream side of the bubbler is provided a buffer or a vacuum breaker or a buffer and a vacuum breaker. The structure prevents the sealing water in the bubbler from flowing backward, so that danger of steam explosion can be avoided.

Abstract: A feeding reservoir 11 for intermittently or continuously feeding granular raw material into a pulling apparatus 1, a chamber 13 connected to the feeding reservoir 11 through a gate valve 12, a granular raw material supply section 15 by which the granular raw material is supplied to the chamber 13 through a gate valve 14 and a pressure adjustment means 20 which adjusts the inner pressure of the chamber 13 is provided, and the granular raw material is fed to the feeding reservoir 11 while maintaining the inner pressure of the feeding reservoir 11 as the same as the inner pressure of the single crystal pulling apparatus 1. This feeding method and structure makes it possible to feed an additional amount of granular raw material even during the continuous charging process and or the recharging process without interrupting the process and also to pull a heavy single crystal rod with a large diameter without increasing the capacity of the feeding reservoir.

Abstract: A crucible is mounted on a crucible support bolt (11, 34) in a vacuum chamber (33) resting on a base stand (32) and can be heated by the thermal radiation of a heating element. A drawing element (35) is provided above the melt, by means of which the crystal can be drawn up from the surface of the melt into a transfer lock chamber (36), which can be pivoted laterally with respect to the base stand (32). A separating device is provided between the crystal and the drawing element (35) to separate the crystal from the drawing element (35). The base stand (32) is formed by a platform (38) supported by four posts (37) three additional legs (39) of equal length extend upward from three of the four corners of the rectangular platform (38) holding the vacuum chamber (33), these (39) being held together at their top ends by a horizontal frame (40), which forms a right triangle.

Abstract: An enclosing structure extends into a transition zone of a crystal growing system through which the growing crystal is pulled. One or more independent temperature control devices are secured to the inside surface of the enclosing structure, which control devices sense crystal temperature and supply to, or extract heat from, the crystal so that a carefully-controlled thermal gradient can be established either radially or longitudinally in the crystal. The temperature control devices may include temperature sensors that provide temperature information to a central control device connected to each temperature control device. The enclosing structure may have a hollow wall structure through which a heat exchange fluid, such as water, is passed to extract heat from the transition chamber and crystal. The temperature control apparatus may also be segmented so that each segment can be controlled independently of the remaining segments thereby permitting independent control to be effected at different crystal areas.

Abstract: Orbital oscillations of the crystal ingot suspended in a cable in a Czochralski crystal puller are damped by mechanically connecting a high-temperature conductor to the ingot and generating a magnetic field in the vicinity of the conductor. The magnetic field induces an eddy current in the conductor when the ingot moves. The eddy current then interacts with the magnetic field to damp motion of the ingot. In one embodiment, the magnetic field generator is moved as the ingot grows to maintain the magnetic field in the vicinity of the conductor. In another embodiment, the strength of the magnetic field is adjusted dependent on the amplitude of the oscillations to conserve power.