Abstract: A process of making thermoelectric coolers by direct printing of n- and p-type semiconductor materials suitable for making thermoelectric coolers is disclosed. Micro Jet Printing of arrays on n and p-type materials belong to conductive site pads on non-conductive substrate and crystalization of these materials in the preferred direction as they cool produces thermoelectric cooler components without the need for sawing and machining operations. A non-conductive top substrate having conductive bonding pads is secured to the tops of the columns n and p-type semiconductor materials thereby forming an electrical and physical bond to make a thermoelectric cooler package.

Abstract: The invention relates to a Bi-substituted rare earth-iron garnet single-crystal film and a method for producing it, and also to a Faraday rotator comprising it. Its object is to provide a magnetic garnet single-crystal film which hardly cracks while it grows or is cooled or polished and worked, and to provide a method for producing it. Its object is also to provide a Faraday rotator produced at high yield by working the magnetic garnet single-crystal film which hardly cracks while it grows or is cooled or polished and worked. In a method for producing a magnetic garnet single-crystal film by growing a Bi-substituted magnetic garnet single crystal in a mode of liquid-phase epitaxial growth, the lattice constant of the growing magnetic garnet single crystal is so controlled that it does not vary or gradually decreases with the growth of the single-crystal film, and then increases with it.

Abstract: A method is used when manufacturing a bismuth-substituted rare-earth iron garnet single crystal (BIG) film by the LPE method. The BIG film is grown on one side of a non-magnetic garnet substrate using a melt that contains flux components and rare-earth oxides. An amount of calcium is added to the melt such that a difference between optical absorption coefficients of the film at a wavelength of 0.78 .mu.m before and after subjecting the film to hydrogen-reduction treatment ranges from 660 to 1430 dB/cm. The film is grown on a non-magnetic garnet substrate having a thickness in the range of 400-600 .mu.m, at a crystal growth temperature of the melt to form a film-substrate structure. The film-substrate structure has a curvature ranging from +0.3 to +0.7 m.sup.-1 at room temperature. The film-substrate structure is subjected to the hydrogen reduction at a temperature ranging from 320 to 400.degree. C.

Abstract: While a nitrogen-doped gallium phosphide epitaxial layer in an epitaxial wafer as a material of light-emitting diodes is desired to have a high concentration of nitrogen in order to enhance the efficiency of light emission, the present invention provides a reliable and efficient means to accomplish a high nitrogen concentration by the increase of the concentration of ammonia as a nitrogen source in the doping atmosphere to the contrary to the general understanding that increase of the ammonia concentration to exceed a limit rather has an effect of decreasing the concentration of nitrogen doped in the epitaxial layer. The inventive method is based on the discovery that an exponential relationship is held between the growth rate of the epitaxial layer and the concentration of nitrogen in the thus grown epitaxial layer.

Abstract: When a film is formed on a wafer of groups III-V compound semiconductors by heating, slips are formed in the periphery of the wafer because of residual inner stress of the wafer. The quality of an epitaxially grown crystal is damaged by these slips. The residual stress of the wafer is caused by the residual stress generated in an inner part of an ingot at the time of growing a crystal. Therefore, it is an object to prepare a wafer in which no slips are generated when the epitaxial growth is carried out. In order to achieve this object, a method is provided in which; an ingot is heated and cooled in a range between an upper limit temperature T.sub.h, and a lower limit temperature T.sub.1 where the upper limit temperature ranges from more than 800.degree. C. to less than a melting point of a material of the ingot, and the lower limit temperature ranges from more than 800.degree. C. to less than the upper limit temperature T.sub.h.

Abstract: A method for providing an nonlinear, frequency converting optical QPM waveguide device by growing a first ferroelectric oxide film or layer on a second ferroelectric layer or medium wherein, in first and second embodiments, respectively, the second layer is initially provided with a periodic nonlinear coefficient pattern or a periodic pattern comprising a seed layer. During the growth of the first layer, the periodic pattern formed in the second layer, is replicated, transformed or induced into the first layer resulting in a plurality of substantially rectangular prismatic-shaped domains in the first layer having the periodic nonlinear coefficient pattern status based upon the periodic patterning of the second layer.

Abstract: A method of manufacturing a light emitting diode, which includes the steps of bringing a semiconductor substrate of p-type or n-type into contact with a growth solution at a high temperature and thereafter, lowering the temperature so as to form a monocrystalline epitaxial layer of the same type as the semiconductor substrate on the semiconductor substrate, subsequently, further lowering the above temperature to form a first monocrystalline epitaxial layer of a reverse type to the epitaxial layer on the epitaxial layer and then, cutting off the growth solution to form an epitaxial wafer as a result, a growth solution to contact the first epitaxial layer of a epitaxial wafer at a high temperature, and thereafter, the temperature is lowered to form a second monocrystalline epitaxial layer of the same kind and type as the first epitaxial layer on the first epitaxial layer.

Abstract: A film made of lithium niobate-lithium tantalate solid solution may be formed on a single crystal substrate having a composition of LiNb.sub.1-z Ta.sub.z O.sub.3 (0.ltoreq.z<0.8) by the liquid phase epitaxial process. The substrate is contacted with supercooled liquid phase of a melt to produce the film thereon. The melt consists mainly of Li.sub.2 O.sub.3, Nb.sub.2 O.sub.5, Ta.sub.2 O.sub.5 and a flux. A composition of the liquid phase is within a region encompassed by a straight line K linking a point A (95, 5, 0) and a point B (95, 2, 3), a straight line G linking the point A (95, 5, 0) and a point C (60, 40, 0), a straight line H linking the point C (60, 40, 0) and a point D (60, 0, 40), a straight line J linking the point B (95, 2, 3) and a point E (0, 40, 60) and a curved line I defining a composition whose saturation temperature is not more than 1200.degree. C. Each line is shown in a triangular diagram of a pseudo-ternary system of LiNbO.sub.3 -LiTaO.sub.3 --a melting medium.

Abstract: In an improved liquid phase epitaxial growth method and apparatus in which a plurality of substrates are placed in a deposition chamber having at least one first vent hole; a solution for liquid phase growth is held in a solution chamber having at least one second vent hole and at least two sub-chambers separated by a partition plate and communicated with each other via a communicating portion; and before the substrates and the solution for liquid phase growth are brought into contact with each other, the deposition chamber and the solution chamber are revolved for causing the solution for liquid phase growth to move through the communicating portion so as to increase and decrease the volume of space portions of the respective sub-chambers and thereby replacement of a heat-treatment gas in the deposition chamber and the solution chamber is undertaken to achieve heat treatment.

Abstract: This disclosure herein pertains to a method for producing a GaP epitaxial wafer used for fabrication of light emitting diodes having higher brightness than light emitting diodes fabricated from a GaP epitaxial wafer produced by a conventional method have. The method comprises the steps of: preparing a GaP layered substrate 15 with one or more GaP layers on a GaP single crystal substrate 10 in the first series of liquid phase epitaxial growth; obtaining a layered GaP substrate 15a by eliminating surface irregularities of said GaP layered substrate 15 by mechano-chemical polishing to make the surface to be planar; and then forming a GaP light emitting layer composite 19 on said layered GaP substrate 15a in the second series of liquid phase epitaxial growth.

Abstract: A multiwavelength local plane array infrared detector is included on a common substrate having formed on its top face a plurality of In.sub.x Ga.sub.1-x As (x.ltoreq.0.53) absorption layers, between each pair of which a plurality of InAs.sub.y P.sub.1-y (y.ltoreq.

Abstract: To produce a layer by liquid-phase heteroepitaxy a molten metal serving as the solvent is saturated at a first temperature with substrate material and compounded with layer material. The solution and the substrate are then separatly "overheated" to a second, higher temperature and then brought into contact with each other. Due to the overheating a negative thermodynamic driving force results for the epitaxy which compensates the positive driving force for the epitaxy at least in part due to the different interfacial energies between layer material and solution and substrate material and solution. The degree of overheating determines the resulting total driving force for the epitaxy which may be reduced to zero. Very thin layers, down to a monolayer thickness may be grown in this way from the solution with a layer thickness exact to a monolayer with no dislocation.

Abstract: A method for the formation of a layer on at least one substrate. A liquid, which contains the material for forming the layer, flows over the surface of the substrate of the substrate to be coated. A concentration gradient of the layer-forming material is produced in a direction, perpendicular to the direction of the flow of the liquid. As a result, the concentration of the layer-forming material becomes a maximum at one side of the liquid.

Abstract: In the manufacture of a single crystal film by epitaxial growth method, defects such as cracking are avoided by increasing the deviation of the lattice constant of the resulting film in the direction of growth from the substrate. Preferably, the deviation is increased at the rate of (0.4.about.9).times.10.sup.-4 %/.mu.m.