Having Growth From A Solution Comprising A Solvent Which Is Liquid At Or Below 20 Degrees Celsius (e.g., Aqueous Solution) Patents (Class 117/68)
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Publication number: 20020100411Abstract: This invention is a method for identifying conditions for growing protein crystals giving improved protein crystal growth. Crystals of a protein are grown under different sets of predetermined conditions, and x-ray topographic images of the protein crystals are generated to identify the set(s) of conditions that produce crystals having the fewest crystal defects. In a preferred embodiment, the protein crystals are grown in a dynamically controlled crystallization system. An important condition of crystal growth that can be optimized by the method of the invention is the effective gravity, geff, experienced by the growing crystal; for example, when the crystal is grown in a powerful magnetic field that causes the protein molecules in the growing crystal to experience acceleration of an effective gravitational field that is greater or less than the actual gravitational field at the earth's surface.Type: ApplicationFiled: December 11, 2000Publication date: August 1, 2002Inventors: Leonard Arnowitz, David R. Black, D. Travis Gallagher
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Publication number: 20020066401Abstract: A method of synthesizing colloidal nanocrystals is disclosed using metal oxides or metal salts as a precursor. The metal oxides or metal salts are combined with a ligand and then heated in combination with a coordinating solvent. Upon heating, the metal oxides or salts are converted to stable soluble metal complexes. The metal complexes are formed by cationic species combining with the ligands and/or with the coordinating solvent. Finally, an elemental chalcogenic precursor, for example, Se, Te, or S, is introduced into the soluble metal complex to complete the formation of the nanocrystals at a controllable rate. High-quality CdSe, CdTe, and CdS nanocrystals are produced when CdO is used as the cadmium precursor. With the present method, the size, size distribution, and shape (dots or rods) of the resulting nanocrystals can be controlled during growth. For example, the resulting nanocrystals are nearly monodisperse without any size separation.Type: ApplicationFiled: October 4, 2001Publication date: June 6, 2002Inventors: Xiaogang Peng, Zuoyan Peng, Lianhua Qu
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Patent number: 6398867Abstract: A gallium nitride growth process forms crystalline gallium nitride. The process comprises the steps of providing a source gallium nitride; providing mineralizer; providing solvent; providing a capsule; disposing the source gallium nitride, mineralizer and solvent in the capsule; sealing the capsule; disposing the capsule in a pressure cell; and subjecting the pressure cell to high pressure and high temperature (HPHT) conditions for a length of time sufficient to dissolve the source gallium nitride and precipitate the source gallium nitride into at least one gallium nitride crystal. The invention also provides for gallium nitride crystals formed by the processes of the invention.Type: GrantFiled: October 6, 1999Date of Patent: June 4, 2002Assignee: General Electric CompanyInventors: Mark Philip D'Evelyn, Kristi Jean Narang
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Publication number: 20020062783Abstract: The present invention provides novel devices and method for kinetically controlling vapor diffusion in crystal growth. The devices comprise discrete diffusion pathways which control the kinetics of vapor diffusion between the crystal growth solution and the reservoir. The devices can comprise a channel which can be of varying lengths or geometries. The channel can either be static or controlled actively or dynamically. Alternatively, the diffusion pathways are provided by the material of the device itself. The device comprises porous and/or water absorbing materials through which the vapor can diffuse. The vapor diffusion rate can be controlled by the thickness or material of the device, or a combination of both.Type: ApplicationFiled: May 11, 2001Publication date: May 30, 2002Inventor: Terry Lee Bray
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Publication number: 20020043207Abstract: The present invention provides an improved process for preparing modafinil, whereby it may be isolated in high purity by a single crystallization. The process produces modafinil free of sulphone products of over-oxidation and other byproducts. The invention further provides new crystalline Forms II-VI of modafinil and processes for preparing them. Each of the new forms is differentiated by a unique powder X-ray diffraction pattern. The invention further provides pharmaceutical compositions containing novel modafinil Forms II-IV and VI.Type: ApplicationFiled: July 27, 2001Publication date: April 18, 2002Inventors: Claude Singer, Neomi Gershon, Arina Ceausu, Anita Lieberman, Judith Aronhime
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Patent number: 6368402Abstract: A high throughput crystallization methodology using 1,536 well microassay plate technology is described. The methodology uses mother-daughter plate technology with robotic control to deliver oil, unique crystallization cocktails, and a protein solution to each of the wells. This provides 1,536 unique microbatch crystallization experiments using as little as 6 mg of protein in 600 microliters of solution. The time required to deliver a protein solution to a prepared experiment plate is less than 10 minutes. A plate imaging system with a capacity of 28 microassay plates is also described. The imaging system digitally records the results of the experiments for later comparison to database results.Type: GrantFiled: April 23, 2001Date of Patent: April 9, 2002Assignee: Hauptman-Woodward Medical Research Institute, Inc.Inventors: George T. DeTitta, Joseph R. Luft, Jennifer Wolfley, Robert J. Collins
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Patent number: 6355820Abstract: There is disclosed a chiral molecular magnet having characteristics exhibiting a monocrystal, a magnetic property, an optical activity, a transparent color and a relatively high transition temperature. This chiral molecular magnet is formed of a monocrystal represented by a general formula [Mn(L)]3[Cr(CN)6]2.4H2O (wherein L is optically active (R or S)-1,2-diamines and derivatives thereof or optically active (R or S)-1,3-diamines and derivatives thereof).Type: GrantFiled: June 20, 2000Date of Patent: March 12, 2002Assignee: Okazaki National Research InstitutesInventor: Katsuya Inoue
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Patent number: 6340393Abstract: In synthesizing a diamond by a vapor-phase growth method, a sputtering method, or a high-pressure and high-temperature synthesis method, N, P or As as an n-type dopant, and H as a p-type dopant are simultaneously doped in a crystal to form a donor-acceptor pair in the crystal, to thereby synthesize a transparent n-type diamond having low resistance.Type: GrantFiled: March 7, 2000Date of Patent: January 22, 2002Assignee: Japan Science and Technology CorporationInventor: Hiroshi Yoshida
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Publication number: 20010032582Abstract: A high throughput crystallization methodology using 1,536 well microassay plate technology is described. The methodology uses mother-daughter plate technology with robotic control to deliver oil, unique crystallization cocktails, and a protein solution to each of the wells. This provides 1,536 unique microbatch crystallization experiments using as little as 6 mg of protein in 600 microliters of solution. The time required to deliver a protein solution to a prepared experiment plate is less than 10 minutes. A plate imaging system with a capacity of 28 microassay plates is also described. The imaging system digitally records the results of the experiments for later comparison to database results.Type: ApplicationFiled: April 23, 2001Publication date: October 25, 2001Inventors: George T. DeTitta, Joseph R. Luft, Jennifer Wolfley, Robert J. Collins
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Patent number: 6270569Abstract: A Group III metal element is heated so as to melt, a gas NH3 containing nitrogen atoms is injected into a melt 3 of the Group III metal element at a temperature lower than the melting point of a nitride to be obtained, thereby producing a nitride microcrystal of the Group III element having high wettability with the melt 3 in the melt 3 of the Group III metal element. A mixture of the Group III nitride microcrystal obtained as mentioned above and the Group III metal element solution is used as a starting material of a liquid phase growth or Group III nitride powders obtained by removing the Group III metal material from the mixture are used as a starting material of a vapor phase growth.Type: GrantFiled: June 11, 1998Date of Patent: August 7, 2001Assignee: Hitachi Cable Ltd.Inventors: Masatomo Shibata, Takashi Furuya
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Patent number: 6264741Abstract: A method of making a nanocomposite self-assembly is provided where at least one hydrophilic compound, at least one hydrophobic compound, and at least one amphiphilic surfactant are mixed in an aqueous solvent with the solvent subsequently evaporated to form a self-assembled liquid crystalline mesophase material. Upon polymerization of the hydrophilic and hydrophobic compounds, a robust nanocomposite self-assembled material is formed. Importantly, in the reaction mixture, the amphiphilic surfactant has an initial concentration below the critical micelle concentration to allow formation of the liquid-phase micellar mesophase material. A variety of nanocomposite structures can be formed, depending upon the solvent evaporazation process, including layered mesophases, tubular mesophases, and a hierarchical composite coating composed of an isotropic worm-like micellar overlayer bonded to an oriented, nanolaminated underlayer.Type: GrantFiled: November 24, 1999Date of Patent: July 24, 2001Assignee: Sandia CorporationInventors: C. Jeffrey Brinker, Alan Sellinger, Yunfeng Lu
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Patent number: 6241819Abstract: Doped semiconductor nanoparticles of a size (<100 Å) which exhibit quantum effects. The nanoparticles are grown and doped within a polymer matrix.Type: GrantFiled: April 20, 1993Date of Patent: June 5, 2001Assignee: North American Philips Corp.Inventors: Rameshwar Bhargava, Dennis Gallagher
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Patent number: 6238479Abstract: The present invention provides a raw material for manufacturing an inexpensive fluoride crystal with excellent optical characteristics, and a method of manufacturing a fluoride crystal using a carbon fluoride-based gas that can easily be handled and is capable of preventing gases from being taken into a crystal to avoid degradation of transmittance, etc., and provides further a fluoride crystal and a manufacturing method thereof.Type: GrantFiled: October 22, 1998Date of Patent: May 29, 2001Assignee: Canon Kabushiki KaishaInventor: Tomoru Oba
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Patent number: 6231666Abstract: A process for forming an epitaxial perovskite-phase thin film on a substrate. This thin film can act as a buffer layer between a Ni substrate and a YBa2Cu3O7−x superconductor layer. The process utilizes alkali or alkaline metal acetates dissolved in halogenated organic acid along with titanium isopropoxide to dip or spin-coat the substrate which is then heated to about 700° C. in an inert gas atmosphere to form the epitaxial film on the substrate. The YBCO superconductor can then be deposited on the layer formed by this invention.Type: GrantFiled: July 20, 1999Date of Patent: May 15, 2001Assignee: Sandia CorporationInventors: Paul G. Clem, Mark A. Rodriguez, James A. Voigt, Carol S. Ashley
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Patent number: 6221153Abstract: Compressed gases, liquefied gases, or supercritical fluids are utilized as anti-solvents in a crystal growing process for complex molecules. Crystals of the present invention exhibit greater crystal size and improved morphology over crystals obtained by conventional methods.Type: GrantFiled: June 9, 1998Date of Patent: April 24, 2001Inventors: Trevor Percival Castor, Matthew Albert Britz, Maury David Cosman, Peter Richard d'Entremont, Glenn Thomas Hong
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Patent number: 6203612Abstract: An alternative and improved method for cleaning cooling and/or crystallization surfaces of a crystallizer fouled with a crystallized bisphenol as a result of processing a slurry derived from the production of bisphenol is provided. The method includes the steps of: (a) draining from 20 to 80%, and preferably about 50% of the slurry from the crystallizer; (b) replacing the drained slurry with a solvent comprising phenol, thereby forming a diluted slurry; (c) increasing the temperature in the crystallizer to a temperature at which the crystallized bisphenol is dissolved in the diluted slurry, and then rapidly cooling the diluted slurry to a temperature of 45 to 55° C.; and (d) adding a seed slurry containing solid bisphenol at a concentration of 5 to 30%. The seed slurry has a temperature of 45 to 55° C. and is added until conditions are established at which bisphenol crystals added to the crystallizer do not redissolve.Type: GrantFiled: March 30, 2000Date of Patent: March 20, 2001Assignee: General Electric CompanyInventors: Rudy Peemans, Jan Huibert Weijland, Mourice Van Sintemaartensdijk
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Patent number: 6183554Abstract: A process for forming a dense, epitaxial metal oxide film on a single crystal substrate, including cleaning the surface of the single crystal substrate, contacting the cleaned surface with a polar organic compound such as a small molecular weight alcohol, so that the cleaned surface adsorbs the polar organic compound, then applying a hydrocarbon solvent solution containing at least one organic group-containing metal compound on the polar organic compound-adsorbed surface, and then heating the substrate to decompose the organic group-containing metal compound and to form a dense epitaxial metal oxide film on the substrate.Type: GrantFiled: March 19, 1999Date of Patent: February 6, 2001Assignee: Director-General of Agency of Industrial Science and TechnologyInventors: Susumu Mizuta, Iwao Yamaguchi, Toshiya Kumagai, Takaaki Manabe, Wakichi Kondo, Tadao Shimizu, Tsuyoshi Terayama
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Patent number: 6179912Abstract: Provided is a system and continuous flow process for producing monodisperse semiconductor nanocrystals comprising reservoirs for the starting materials, a mixing path in which the starting materials are mixed, a first reactor in which the mixture of starting materials is mixed with a coordinating solvent and in which nucleation of particles occurs, a second reactor in which controlled growth of the nanocrystals occurs, and a growth termination path in which the growth of the nanocrystals is halted.Type: GrantFiled: December 20, 1999Date of Patent: January 30, 2001Assignee: BioCrystal Ltd.Inventors: Emilio Barbera-Guillem, Marlin O. Thurston
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Patent number: 6174365Abstract: Provided are an apparatus and a method which can accelerate crystallization of a biological macromolecule such as protein. A plurality of solution storage parts are formed on a silicon substrate whose valence electrons are controlled by controlling the concentration and/or the type of impurity. These solution storage parts are connected with each other by passages. The storage part is made to hold a buffer solution containing molecules of protein or the like to be crystallized. The storage parts are also made to hold solutions capable of accelerating crystallization of protein or the like respectively. These solutions are shifted to the solution storage part through the passages for preparing a mixed solution in a different ratio in each storage part. Thus, different conditions for crystallization can be simultaneously formed in a short time with a small amount of sample. A crystal of protein or the like is grown in the storage part holding the mixed solution.Type: GrantFiled: January 6, 1999Date of Patent: January 16, 2001Assignee: Sumitomo Metal Industries, Ltd.Inventor: Akira Sanjoh
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Patent number: 6150536Abstract: The present invention relates to an organic-inorganic hybrid material comprising an organic component and an inorganic component. The organic component comprises a dye that fluoresces in the visible range. In addition, an optically inert component may replace a portion of the organic dye component to increase fluorescence.Type: GrantFiled: July 8, 1999Date of Patent: November 21, 2000Assignee: International Business Machines CorporationInventors: Konstantinos Chondroudis, David Brian Mitzi
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Patent number: 6139626Abstract: A method for patterning materials according to a predetermined, three-dimensional pattern, as well as patterned materials produced by said methods, are provided. A template is prepared comprising a template material, the template having a plurality of pores therein, the plurality of pores comprising a negative of the predetermined, three-dimensional pattern. Colloidal nanocrystals sufficient to fill the pores in the template are also prepared. The pores in the template are filled with the colloidal nanocrystals. A quantum-dot solid is formed from the colloidal nanocrystals within the pores in the template, such that the colloidal nanocrystals are concentrated as close-packed nanocrystals within the pores in the template in the predetermined, three-dimensional pattern. If desired, a conventional solid may be obtained by sintering the close-packed nanocrystals within the pores of the template.Type: GrantFiled: September 4, 1998Date of Patent: October 31, 2000Assignee: NEC Research Institute, Inc.Inventors: David J. Norris, Yurii A. Vlasov
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Patent number: 6126743Abstract: Disclosed is a process for producing dielectrics which satisfy the formula of:WXMO.sub.3 --(l--w)(XO.sub.y --aGO.sub.z)wherein the symbols are as defined in the specification, which comprises mixing an oxide of X, an oxide of M and an oxide of G or compounds capable of being converted to the above oxides so that the region occupied by the oxides or the compounds is smaller than 0.1 .mu.m in diameter and then, firing the mixture by heating at a temperature at which the mixture can be converted to oxides. A process for producing fine single crystal powders and a thin film capacitor are also disclosed.Type: GrantFiled: January 29, 1996Date of Patent: October 3, 2000Assignee: Sumitomo Chemical Company, LimitedInventors: Kunio Saegusa, Yutaka Suzuki
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Patent number: 6123764Abstract: A manufacturing method for a single crystal of calcium fluoride includes the steps of degassing calcium fluoride powder particles to desorb impurities from surfaces of the calcium fluoride powder particles, preprocessing the degassed calcium fluoride powder particles by fusing the degassed calcium fluoride powder particles in a crucible to obtain a preprocessed product, and re-fusing the preprocessed product in a crucible to grow a single crystal of calcium fluoride.Type: GrantFiled: December 1, 1998Date of Patent: September 26, 2000Assignee: Nikon CorporationInventors: Tsutomu Mizugaki, Kazuo Kimura, Shuuichi Takano
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Patent number: 6110273Abstract: Provided is a method which can facilitate crystallization of a biological macromolecule such as protein. A silicon crystal whose valence electrons are controlled so that the concentration of holes or electrons in the surface part can be controlled in response to the environment of a buffer solution containing a biological macromolecule such as protein is brought into contact with the solution, for depositing a crystal of the biological macromolecule on the surface of the silicon crystal. A plurality of grooves or holes whose sizes differ from each other are formed on the silicon crystal, and the valence electrons are so controlled that crystallization of the biological macromolecule is facilitated inside rather than outside the grooves or holes. The crystal of the biological macromolecule grows in the grooves or holes coming into contact with the solution.Type: GrantFiled: December 23, 1998Date of Patent: August 29, 2000Assignee: Sumitomo Metal Industries, Ltd.Inventor: Akira Sanjoh
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Patent number: 6106609Abstract: Nanocrystalline semiconductors are synthesized within a bicontinuous cubic atrix 10. The nanocrystalline particles 12 may then be end-capped 18 with a dispersant to prevent agglomeration. One typical nanocrystalline semiconductor compound made according to the present invention is PbS. Other IV-VI semiconductors may be produced by the method of the present invention. The method of this invention may also be used to produce doped semiconductors.Type: GrantFiled: April 8, 1997Date of Patent: August 22, 2000Assignee: The United States of America as represented by the Secretary of the NavyInventors: Jianping Yang, Banahalli R. Ratna
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Patent number: 6090200Abstract: Nanocrystalline phosphors are formed within a bicontinuous cubic phase. The phosphors are doped with an optimum concentration, of manganese, for example, corresponding to about one or less dopant ions per phosphor particle.Type: GrantFiled: November 18, 1997Date of Patent: July 18, 2000Inventors: Henry F. Gray, Jianping Yang, David S. Y. Hsu, Banhalli R. Ratna, Syed B. Qadri
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Patent number: 6022409Abstract: A method of optical enantiomer resolution by preferential crystallization involves entering, each time crystallization starts, the two-phase domain containing excess enantiomer and the saturated solution, and cooling according to a well-defined kinetic schedule. A racemic mixture of fine particle size is added to the mother liquors obtained after harvesting the crystals, the mother liquors then being heated to a temperature lower than that of homogenization of the solution so that excess enantiomer is present only in a solid state in equilibrium with the solution. Further cooling produces the other enantiomer and completes the cycle of operations which may then be carried out repetitively.Type: GrantFiled: October 2, 1996Date of Patent: February 8, 2000Assignee: The University of RouenInventors: Gerard Coquerel, Marie-Noelle Petit, Roger Bouaziz
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Patent number: 6017390Abstract: The present invention relates to methods and compositions for the growth and alignment of crystals at biopolymeric films. The methods and compositions of the present invention provide means to generate a variety of dense crystalline ceramic films, with totally aligned crystals, at low temperatures and pressures, suitable for use with polymer and plastic substrates.Type: GrantFiled: July 22, 1997Date of Patent: January 25, 2000Assignee: The Regents of the University of CaliforniaInventors: Deborah H. Charych, Amir Berman
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Patent number: 6001176Abstract: A device for specific formation of nuclei or crystals on the surface of a dielectric in contact with a solution, especially on the functional groups of a polymer, in which there is a device for generating an electric field in the dielectric.Type: GrantFiled: September 25, 1996Date of Patent: December 14, 1999Assignees: Klaus Leiter, Gerhard WalderInventors: Klaus Leiter, Gerhard Walder
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Patent number: 5993541Abstract: A process for controlling the formation of ceramics, achievable under ambient conditions, includes preparing a crystallization medium of a ceramic parent solution and spreading an organic monolayer of a hydrogen-bonded network on the air-liquid interface of the solution. For the formation of aragonite, the process uses an undoped calcium bicarbonate solution and a hydrogen-bonded network with a structural motif approximately matching a calcium ion distance in the a-c plane of aragonite. The aragonite product formed has a [010] axis approximately perpendicular to the monolayer. For perovskite materials, such as BSTO ceramics, the microstructure of the product is controlled by changing different functional groups of the organic monolayer which has been spread on the surface of a perovskite parent solution.Type: GrantFiled: July 31, 1996Date of Patent: November 30, 1999Inventors: Arkadi L. Litvin, Suresh Valiyaveettil, David L. Kaplan
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Patent number: 5968265Abstract: A method for producing cubic SiC monocrystals includes dissolving SiC powder or other starting material in a solvent at high overpressures and growing the monocrystals on a seed crystal.Type: GrantFiled: January 27, 1998Date of Patent: October 19, 1999Assignee: Siemens AktiengesellschaftInventors: Rene Stein, Roland Rupp, Johannes Volkl
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Patent number: 5961934Abstract: A method and apparatus for dynamically controlling the crystallization of proteins including a crystallization chamber or chambers for holding a protein in a salt solution, one or more salt solution chambers, two communication passages respectively coupling the crystallization chamber with each of the salt solution chambers, and transfer mechanisms configured to respectively transfer salt solution between each of the salt solution chambers and the crystallization chamber. The transfer mechanisms are interlocked to maintain the volume of salt solution in the crystallization chamber substantially constant. Salt solution of different concentrations is transferred into and out of the crystallization chamber to adjust the salt concentration in the crystallization chamber to achieve precise control of the crystallization process.Type: GrantFiled: February 18, 1998Date of Patent: October 5, 1999Assignee: Biospace International Inc.Inventors: Leonard Arnowitz, Emanuel Steinberg
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Patent number: 5938837Abstract: Cerium oxide ultrafine particles consist essentially of cerium oxide single crystal grains having a grain size ranging from 10 to 80 nm and the cerium oxide ultrafine particles can be prepared by a method which comprises the steps of mixing, with stirring, an aqueous solution of cerous nitrate with a base in such a mixing ratio that the pH value of the mixture ranges from 5 to 10, then rapidly heating the resulting mixture up to a temperature of 70 to 100.degree. C. and maturing the mixture at that temperature. The cerium oxide ultrafine particles not only have an average particle size ranging from 10 to 80 nm, but also are uniform in the particle size and in the shape.Type: GrantFiled: September 25, 1996Date of Patent: August 17, 1999Assignee: Mitsui Mining and Smelting Co., Ltd.Inventors: Kenzo Hanawa, Naoyoshi Mochizuki, Naruo Ueda
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Patent number: 5871579Abstract: A convenient two-step dipping technique for preparing high-quality thin films of a variety of perovskites is provided by the invention. Thin films of Mi.sub.2 (M=Pb, Sn) were first prepared by vacuum-depositing MI.sub.2 onto ash glass or quart substrates, which were subsequently dipped into a solution containing the desired organic ammonium cation for a short period of time. Using this technique, thin films of different layered organic-inorganic perovskites (RNH.sub.3).sub.2 (CH.sub.3 NH.sub.3).sub.n-1 M.sub.n I.sub.3n+1 (R=butyl, phenethyl; M=Pb, Sn; and n=1, 2) and three-dimensional perovskites CH.sub.3 NH.sub.3 MI.sub.3 (M=Pb, Sn; i.e. n=.infin.) were successfully prepared at room temperature. The lattice constants of these dip-processed perovskites are very similar to those of the corresponding compounds prepared by solution-growth or by solid state reactions. The layered perovskite thin films possess strong photoluminescence, distributed uniformly across the film areas.Type: GrantFiled: September 25, 1997Date of Patent: February 16, 1999Assignee: International Business Machines CorporationInventors: Kangning Liang, David Brian Mitzi, Michael T. Prikas
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Patent number: 5837054Abstract: Crystals formed of a solid-solution of NiSiF.sub.6 6H.sub.2 O provide very good materials for filtering ultraviolet light and will not deteriorate in temperatures as high as 115.degree. C. They are particularly useful in sensing devices which seek to identify the presence of ultraviolet light in the UV missile warning band.Type: GrantFiled: August 30, 1996Date of Patent: November 17, 1998Assignee: Northrop Grumman CorporationInventors: Narsingh B. Singh, William D. Partlow, Steven Strauch, Albert M. Stewart, John F. Jackovitz, David W. Coffey, Robert Mazelski
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Patent number: 5803966Abstract: A process employing a supercritical fluid anti-solvent for sizing prednisolone acetate is disclosed. The process optionally incorporates sterilization filters. Average particle sizes of about 1 .mu.m or less (number average) and narrow particle size ranges are obtainable. The process comprises the steps of (a) forming a solution by dissolving prednisolone acetate in acetone such that the concentration of prednisolone acetate is approximately 80% or less of its solubility in acetone; and (b) transporting the solution formed in step (a) through an orifice having a diameter of 50-100 .mu.m into a mixer/expander containing compressed CO.sub.2, wherein the compressed CO.sub.2 is at a temperature from about 40.degree. to 80.degree. C. and has a density less than the density of the solution by at least 0.3 g/cc, to expand the solution so that the acetone dissolves in the CO.sub.2 and the prednisolone acetate precipitates.Type: GrantFiled: November 1, 1995Date of Patent: September 8, 1998Assignee: Alcon Laboratories, Inc.Inventors: Alok K. Kulshreshtha, Garnet G. Smith, Scott D. Anderson, Val J. Krukonis
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Patent number: 5800611Abstract: A single crystal silicon sheet is formed from a polycrystalline sheet by melting a relatively small portion of the sheet at an initial location and defining a single crystallographic orientation for the silicon by placing a small silicon seed crystal in contact with the melted silicon at the initial location. The melted portion is then moved from the initial location throughout the sheet to move impurities in the sheet to the edges of the sheet and to extend the crystallographic orientation of the silicon established at the initial location to the whole sheet, inwardly of the edges. The edges containing impurities and any remaining polycrystalline structure are removed to produce a sheet of single crystal silicon. A polycrystalline sheet may be formed by spreading a slurry of a silicon powder, a binder, and solvent on a surface and allowing the solvent to evaporate to form a sheet. The sheet is moistened to cause it to expand and sheer clear of the surface.Type: GrantFiled: September 8, 1997Date of Patent: September 1, 1998Inventor: Howard Christensen
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Patent number: 5788765Abstract: Crystals formed of a solid-solution of K.sub.2 Ni(SO.sub.4).sub.2 6H.sub.2 O provide very good materials for filtering ultraviolet light and will not deteriorate in temperatures as high as 110.degree. C. They are particularly useful in sensing devices which seek to identify the presence of ultraviolet light in the UV missile warning band.Type: GrantFiled: August 30, 1996Date of Patent: August 4, 1998Assignee: Northrop Grumman CorporationInventors: Narsingh B. Singh, William D. Partlow, Steven Strauch, Albert M. Stewart, John F. Jackovitz, David W. Coffey
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Patent number: 5772755Abstract: Oriented materials are described in which particular crystalline materials are grown on a highly-oriented polytetrafluoroethylene substrate. Compositions are provided comprising a layer of aligned molecular chains of oriented polytetrafluoroethylene and an overlayer of a second polymer that imparts desired properties to the construction. A third layer of crystallizable, orientable material is then deposited on the overlayer. The third layer becomes oriented. The materials are useful as polarizers when the third layer is a polarizing dye.Type: GrantFiled: August 1, 1996Date of Patent: June 30, 1998Assignee: W. L. Gore & Associates, Inc.Inventors: Jack Hegenbarth, Diane R. Carpenter
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Patent number: 5766342Abstract: The method for forming a silicon film of this invention includes the steps of introducing a compound containing silicon and chlorine and being in a liquid form under normal pressure and at an ordinary temperature into a reaction chamber, and spraying the compound in the liquid form in a fine particle state to a surface of a substrate supported in the reaction chamber, and decomposing the compound in the fine particle state by energy applied from outside of the reaction chamber, and depositing a silicon film on the substrate supported in the reaction chamber.Type: GrantFiled: October 17, 1995Date of Patent: June 16, 1998Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Munehiro Shibuya, Masatoshi Kitagawa, Yuji Mukai, Takashi Hirao, Akihisa Yoshida
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Patent number: 5614018Abstract: A xylene exchange is performed on a stock solution of BST of greater then 99.999% purity dissolved in methoxyethanol, and a carboxylate of a dopant metal, such as magnesium 2-ethylhexanoate is added to form a precursor. The precursor is spun on a first electrode, dried at 400.degree. C. for 2 minutes, then annealed at 750.degree. C. to 800.degree. C. for about an hour to form a layer of accurately doped BST. A second electrode is deposited, patterned, and annealed at between 750.degree. C. to 800.degree. C. for about 30 minutes. Excellent leakage current results if the dopant is magnesium of about 5% molarity. For other dopants, such as Mg, Nb, Y, Bi, and Sn the preferred dopant range is 0.2% to 0.3% molarity. The magnesium-doped material is used as a buffer layer between the electrodes and BST dielectric of an undoped BST capacitor.Type: GrantFiled: July 11, 1994Date of Patent: March 25, 1997Assignees: Symetrix Corporation, Matsushita Electronics CorporationInventors: Masamichi Azuma, Carlos A. Paz De Araujo, Michael C. Scott, Joseph D. Cuchiaro
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Patent number: 5542372Abstract: This invention relates to a single crystallization process for purification of dimethyl terephtalate (DMT) by film crystallization, including pumping the raw DMT into a film crystallizer and reducing its temperature to form DMT crystalline on the walls of the crystallizing pipes in the crystallizer, and then heating the crystallizing pipes and collecting the melt at 140.degree.-145.degree. C. The product DMT is thus obtained.Type: GrantFiled: November 10, 1994Date of Patent: August 6, 1996Assignee: Tianjin Petro-Chemical CorporationInventors: Xujiang Sun, Junmin Zhang, Tongshun Wang, Jun Zhang, Hong Su, Hongxia Xia
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Patent number: 5499600Abstract: A crystal solution growth method for growing a crystal by providing a temperature difference between the higher and lower regions of a solvent, and disposing a source crystal at a high temperature region of the solution and a seed crystal at a low temperature region of the solution. The crystal solution growth method includes the steps of: placing the seed crystal on a recess of a heat sink, the heat sink being disposed under the solvent and the recess being defined on the top surface of the heat sink; placing a seed stopper on the seed crystal to fix the seed crystal, the seed stopper having a tubular part with an inner diameter generally same as the seed crystal and a seed crystal fixing part for fixing the seed crystal formed at one end of, the tubular part on the seed crystal side; and forming a temperature difference between the higher and lower regions of the solvent and growing a crystal oil the surface of the seed crystal.Type: GrantFiled: December 19, 1994Date of Patent: March 19, 1996Assignees: Stanley Electric Co., Ltd., Kanagawa Academy of Science and TechnologyInventors: Yasuo Okuno, Shotaro Tomita, Hiroyuki Kato
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Patent number: 5463976Abstract: A method for producing crystals of a diester phosphate monopotassium salt, comprising(a) reacting the diester phosphate of the formula (I) ##STR1## with potassium hydroxide in a solvent selected from the group consisting of isopropyl alcohol, methylene chloride and chloroform and(b) allowing crystals of the diester phosphate monopotassium salt to precipitate out. The EPC-K crystals produced by the production method of the present invention have extremely fine purity and crystal appearance. Accordingly, the present invention is advantageous in that provision of pharmaceutical preparation superior in efficacy, safety and stability has been made possible.Type: GrantFiled: March 29, 1995Date of Patent: November 7, 1995Assignee: Senju Pharmaceutical Co., Ltd.Inventor: Masayuki Nakamura
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Patent number: 5363797Abstract: A method for producing an organic crystal is disclosed. One embodiment comprises maintaining a capillary tube containing a fused liquid of an organic crystal material and having a fused liquid reservoir at one end thereof at a temperature not less than the fusion point of the organic crystal material together with the fused liquid reservoir, reducing the temperature of the fused liquid in the fused liquid reservoir to precipitate seed crystals, and then slowly cooling the capillary tube successively from the end toward the other end to allow a single crystal to grow from the seed crystal in the capillary tube. Because of the large quantity of the fused liquid, a seed crystal can be formed and allowed to grow even from a fused liquid of an organic crystal material which hardly crystallizes in the form of a fused liquid.Type: GrantFiled: May 4, 1992Date of Patent: November 15, 1994Assignee: Sumitomo Electric Industries, Ltd.Inventors: Naota Uenishi, Takafumi Uemiya, Yo Shimizu, Akira Mizoguchi, Yasuji Oogaki, Yasuhiro Hattori, Shinsuke Umegaki
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Patent number: 5360478Abstract: Disclosed is a method for recrystallizing solid materials (e.g. RDX) from systems comprised of a solute, which is the eventual material recrystallized, a liquid which is a suitable solvent for the solute, and a gaseous component which is soluble within the solvent and whose presence therein causes the solvent to approach or attain a supersaturated state, thereby precipitating (recrystallizing) the solute material. By control of process parameters (pressure, temperature, time, and rate, rate of injection of gas, etc.) the operator can influence the properties of the material recrystallized.Type: GrantFiled: June 28, 1991Date of Patent: November 1, 1994Assignee: Phasex CorporationInventors: Val J. Krukonis, P. M. Gallagher, M. P. Coffey
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Patent number: 5320703Abstract: A process for forming a gold thin film comprises subjecting a gold complex to a decomposition treatment to transfer the gold in a solution to a supersaturated state, and forming a crystalline gold thin film composed of a group of monocrystals on the surface of a substrate.Type: GrantFiled: May 8, 1992Date of Patent: June 14, 1994Assignee: Canon Kabushiki KaishaInventors: Tsutomu Ikeda, Hideo Kato, Masahiko Miyamoto, Ken Eguchi, Taichi Sugimoto, Haruki Kawada, Kiyoshi Takimoto, Toshihiko Takeda