Having Growth From A Solution Comprising A Solvent Which Is Liquid At Or Below 20 Degrees Celsius (e.g., Aqueous Solution) Patents (Class 117/68)
  • Publication number: 20020100411
    Abstract: This invention is a method for identifying conditions for growing protein crystals giving improved protein crystal growth. Crystals of a protein are grown under different sets of predetermined conditions, and x-ray topographic images of the protein crystals are generated to identify the set(s) of conditions that produce crystals having the fewest crystal defects. In a preferred embodiment, the protein crystals are grown in a dynamically controlled crystallization system. An important condition of crystal growth that can be optimized by the method of the invention is the effective gravity, geff, experienced by the growing crystal; for example, when the crystal is grown in a powerful magnetic field that causes the protein molecules in the growing crystal to experience acceleration of an effective gravitational field that is greater or less than the actual gravitational field at the earth's surface.
    Type: Application
    Filed: December 11, 2000
    Publication date: August 1, 2002
    Inventors: Leonard Arnowitz, David R. Black, D. Travis Gallagher
  • Publication number: 20020066401
    Abstract: A method of synthesizing colloidal nanocrystals is disclosed using metal oxides or metal salts as a precursor. The metal oxides or metal salts are combined with a ligand and then heated in combination with a coordinating solvent. Upon heating, the metal oxides or salts are converted to stable soluble metal complexes. The metal complexes are formed by cationic species combining with the ligands and/or with the coordinating solvent. Finally, an elemental chalcogenic precursor, for example, Se, Te, or S, is introduced into the soluble metal complex to complete the formation of the nanocrystals at a controllable rate. High-quality CdSe, CdTe, and CdS nanocrystals are produced when CdO is used as the cadmium precursor. With the present method, the size, size distribution, and shape (dots or rods) of the resulting nanocrystals can be controlled during growth. For example, the resulting nanocrystals are nearly monodisperse without any size separation.
    Type: Application
    Filed: October 4, 2001
    Publication date: June 6, 2002
    Inventors: Xiaogang Peng, Zuoyan Peng, Lianhua Qu
  • Patent number: 6398867
    Abstract: A gallium nitride growth process forms crystalline gallium nitride. The process comprises the steps of providing a source gallium nitride; providing mineralizer; providing solvent; providing a capsule; disposing the source gallium nitride, mineralizer and solvent in the capsule; sealing the capsule; disposing the capsule in a pressure cell; and subjecting the pressure cell to high pressure and high temperature (HPHT) conditions for a length of time sufficient to dissolve the source gallium nitride and precipitate the source gallium nitride into at least one gallium nitride crystal. The invention also provides for gallium nitride crystals formed by the processes of the invention.
    Type: Grant
    Filed: October 6, 1999
    Date of Patent: June 4, 2002
    Assignee: General Electric Company
    Inventors: Mark Philip D'Evelyn, Kristi Jean Narang
  • Publication number: 20020062783
    Abstract: The present invention provides novel devices and method for kinetically controlling vapor diffusion in crystal growth. The devices comprise discrete diffusion pathways which control the kinetics of vapor diffusion between the crystal growth solution and the reservoir. The devices can comprise a channel which can be of varying lengths or geometries. The channel can either be static or controlled actively or dynamically. Alternatively, the diffusion pathways are provided by the material of the device itself. The device comprises porous and/or water absorbing materials through which the vapor can diffuse. The vapor diffusion rate can be controlled by the thickness or material of the device, or a combination of both.
    Type: Application
    Filed: May 11, 2001
    Publication date: May 30, 2002
    Inventor: Terry Lee Bray
  • Publication number: 20020043207
    Abstract: The present invention provides an improved process for preparing modafinil, whereby it may be isolated in high purity by a single crystallization. The process produces modafinil free of sulphone products of over-oxidation and other byproducts. The invention further provides new crystalline Forms II-VI of modafinil and processes for preparing them. Each of the new forms is differentiated by a unique powder X-ray diffraction pattern. The invention further provides pharmaceutical compositions containing novel modafinil Forms II-IV and VI.
    Type: Application
    Filed: July 27, 2001
    Publication date: April 18, 2002
    Inventors: Claude Singer, Neomi Gershon, Arina Ceausu, Anita Lieberman, Judith Aronhime
  • Patent number: 6368402
    Abstract: A high throughput crystallization methodology using 1,536 well microassay plate technology is described. The methodology uses mother-daughter plate technology with robotic control to deliver oil, unique crystallization cocktails, and a protein solution to each of the wells. This provides 1,536 unique microbatch crystallization experiments using as little as 6 mg of protein in 600 microliters of solution. The time required to deliver a protein solution to a prepared experiment plate is less than 10 minutes. A plate imaging system with a capacity of 28 microassay plates is also described. The imaging system digitally records the results of the experiments for later comparison to database results.
    Type: Grant
    Filed: April 23, 2001
    Date of Patent: April 9, 2002
    Assignee: Hauptman-Woodward Medical Research Institute, Inc.
    Inventors: George T. DeTitta, Joseph R. Luft, Jennifer Wolfley, Robert J. Collins
  • Patent number: 6355820
    Abstract: There is disclosed a chiral molecular magnet having characteristics exhibiting a monocrystal, a magnetic property, an optical activity, a transparent color and a relatively high transition temperature. This chiral molecular magnet is formed of a monocrystal represented by a general formula [Mn(L)]3[Cr(CN)6]2.4H2O (wherein L is optically active (R or S)-1,2-diamines and derivatives thereof or optically active (R or S)-1,3-diamines and derivatives thereof).
    Type: Grant
    Filed: June 20, 2000
    Date of Patent: March 12, 2002
    Assignee: Okazaki National Research Institutes
    Inventor: Katsuya Inoue
  • Patent number: 6340393
    Abstract: In synthesizing a diamond by a vapor-phase growth method, a sputtering method, or a high-pressure and high-temperature synthesis method, N, P or As as an n-type dopant, and H as a p-type dopant are simultaneously doped in a crystal to form a donor-acceptor pair in the crystal, to thereby synthesize a transparent n-type diamond having low resistance.
    Type: Grant
    Filed: March 7, 2000
    Date of Patent: January 22, 2002
    Assignee: Japan Science and Technology Corporation
    Inventor: Hiroshi Yoshida
  • Publication number: 20010032582
    Abstract: A high throughput crystallization methodology using 1,536 well microassay plate technology is described. The methodology uses mother-daughter plate technology with robotic control to deliver oil, unique crystallization cocktails, and a protein solution to each of the wells. This provides 1,536 unique microbatch crystallization experiments using as little as 6 mg of protein in 600 microliters of solution. The time required to deliver a protein solution to a prepared experiment plate is less than 10 minutes. A plate imaging system with a capacity of 28 microassay plates is also described. The imaging system digitally records the results of the experiments for later comparison to database results.
    Type: Application
    Filed: April 23, 2001
    Publication date: October 25, 2001
    Inventors: George T. DeTitta, Joseph R. Luft, Jennifer Wolfley, Robert J. Collins
  • Patent number: 6270569
    Abstract: A Group III metal element is heated so as to melt, a gas NH3 containing nitrogen atoms is injected into a melt 3 of the Group III metal element at a temperature lower than the melting point of a nitride to be obtained, thereby producing a nitride microcrystal of the Group III element having high wettability with the melt 3 in the melt 3 of the Group III metal element. A mixture of the Group III nitride microcrystal obtained as mentioned above and the Group III metal element solution is used as a starting material of a liquid phase growth or Group III nitride powders obtained by removing the Group III metal material from the mixture are used as a starting material of a vapor phase growth.
    Type: Grant
    Filed: June 11, 1998
    Date of Patent: August 7, 2001
    Assignee: Hitachi Cable Ltd.
    Inventors: Masatomo Shibata, Takashi Furuya
  • Patent number: 6264741
    Abstract: A method of making a nanocomposite self-assembly is provided where at least one hydrophilic compound, at least one hydrophobic compound, and at least one amphiphilic surfactant are mixed in an aqueous solvent with the solvent subsequently evaporated to form a self-assembled liquid crystalline mesophase material. Upon polymerization of the hydrophilic and hydrophobic compounds, a robust nanocomposite self-assembled material is formed. Importantly, in the reaction mixture, the amphiphilic surfactant has an initial concentration below the critical micelle concentration to allow formation of the liquid-phase micellar mesophase material. A variety of nanocomposite structures can be formed, depending upon the solvent evaporazation process, including layered mesophases, tubular mesophases, and a hierarchical composite coating composed of an isotropic worm-like micellar overlayer bonded to an oriented, nanolaminated underlayer.
    Type: Grant
    Filed: November 24, 1999
    Date of Patent: July 24, 2001
    Assignee: Sandia Corporation
    Inventors: C. Jeffrey Brinker, Alan Sellinger, Yunfeng Lu
  • Patent number: 6241819
    Abstract: Doped semiconductor nanoparticles of a size (<100 Å) which exhibit quantum effects. The nanoparticles are grown and doped within a polymer matrix.
    Type: Grant
    Filed: April 20, 1993
    Date of Patent: June 5, 2001
    Assignee: North American Philips Corp.
    Inventors: Rameshwar Bhargava, Dennis Gallagher
  • Patent number: 6238479
    Abstract: The present invention provides a raw material for manufacturing an inexpensive fluoride crystal with excellent optical characteristics, and a method of manufacturing a fluoride crystal using a carbon fluoride-based gas that can easily be handled and is capable of preventing gases from being taken into a crystal to avoid degradation of transmittance, etc., and provides further a fluoride crystal and a manufacturing method thereof.
    Type: Grant
    Filed: October 22, 1998
    Date of Patent: May 29, 2001
    Assignee: Canon Kabushiki Kaisha
    Inventor: Tomoru Oba
  • Patent number: 6231666
    Abstract: A process for forming an epitaxial perovskite-phase thin film on a substrate. This thin film can act as a buffer layer between a Ni substrate and a YBa2Cu3O7−x superconductor layer. The process utilizes alkali or alkaline metal acetates dissolved in halogenated organic acid along with titanium isopropoxide to dip or spin-coat the substrate which is then heated to about 700° C. in an inert gas atmosphere to form the epitaxial film on the substrate. The YBCO superconductor can then be deposited on the layer formed by this invention.
    Type: Grant
    Filed: July 20, 1999
    Date of Patent: May 15, 2001
    Assignee: Sandia Corporation
    Inventors: Paul G. Clem, Mark A. Rodriguez, James A. Voigt, Carol S. Ashley
  • Patent number: 6221153
    Abstract: Compressed gases, liquefied gases, or supercritical fluids are utilized as anti-solvents in a crystal growing process for complex molecules. Crystals of the present invention exhibit greater crystal size and improved morphology over crystals obtained by conventional methods.
    Type: Grant
    Filed: June 9, 1998
    Date of Patent: April 24, 2001
    Inventors: Trevor Percival Castor, Matthew Albert Britz, Maury David Cosman, Peter Richard d'Entremont, Glenn Thomas Hong
  • Patent number: 6203612
    Abstract: An alternative and improved method for cleaning cooling and/or crystallization surfaces of a crystallizer fouled with a crystallized bisphenol as a result of processing a slurry derived from the production of bisphenol is provided. The method includes the steps of: (a) draining from 20 to 80%, and preferably about 50% of the slurry from the crystallizer; (b) replacing the drained slurry with a solvent comprising phenol, thereby forming a diluted slurry; (c) increasing the temperature in the crystallizer to a temperature at which the crystallized bisphenol is dissolved in the diluted slurry, and then rapidly cooling the diluted slurry to a temperature of 45 to 55° C.; and (d) adding a seed slurry containing solid bisphenol at a concentration of 5 to 30%. The seed slurry has a temperature of 45 to 55° C. and is added until conditions are established at which bisphenol crystals added to the crystallizer do not redissolve.
    Type: Grant
    Filed: March 30, 2000
    Date of Patent: March 20, 2001
    Assignee: General Electric Company
    Inventors: Rudy Peemans, Jan Huibert Weijland, Mourice Van Sintemaartensdijk
  • Patent number: 6183554
    Abstract: A process for forming a dense, epitaxial metal oxide film on a single crystal substrate, including cleaning the surface of the single crystal substrate, contacting the cleaned surface with a polar organic compound such as a small molecular weight alcohol, so that the cleaned surface adsorbs the polar organic compound, then applying a hydrocarbon solvent solution containing at least one organic group-containing metal compound on the polar organic compound-adsorbed surface, and then heating the substrate to decompose the organic group-containing metal compound and to form a dense epitaxial metal oxide film on the substrate.
    Type: Grant
    Filed: March 19, 1999
    Date of Patent: February 6, 2001
    Assignee: Director-General of Agency of Industrial Science and Technology
    Inventors: Susumu Mizuta, Iwao Yamaguchi, Toshiya Kumagai, Takaaki Manabe, Wakichi Kondo, Tadao Shimizu, Tsuyoshi Terayama
  • Patent number: 6179912
    Abstract: Provided is a system and continuous flow process for producing monodisperse semiconductor nanocrystals comprising reservoirs for the starting materials, a mixing path in which the starting materials are mixed, a first reactor in which the mixture of starting materials is mixed with a coordinating solvent and in which nucleation of particles occurs, a second reactor in which controlled growth of the nanocrystals occurs, and a growth termination path in which the growth of the nanocrystals is halted.
    Type: Grant
    Filed: December 20, 1999
    Date of Patent: January 30, 2001
    Assignee: BioCrystal Ltd.
    Inventors: Emilio Barbera-Guillem, Marlin O. Thurston
  • Patent number: 6174365
    Abstract: Provided are an apparatus and a method which can accelerate crystallization of a biological macromolecule such as protein. A plurality of solution storage parts are formed on a silicon substrate whose valence electrons are controlled by controlling the concentration and/or the type of impurity. These solution storage parts are connected with each other by passages. The storage part is made to hold a buffer solution containing molecules of protein or the like to be crystallized. The storage parts are also made to hold solutions capable of accelerating crystallization of protein or the like respectively. These solutions are shifted to the solution storage part through the passages for preparing a mixed solution in a different ratio in each storage part. Thus, different conditions for crystallization can be simultaneously formed in a short time with a small amount of sample. A crystal of protein or the like is grown in the storage part holding the mixed solution.
    Type: Grant
    Filed: January 6, 1999
    Date of Patent: January 16, 2001
    Assignee: Sumitomo Metal Industries, Ltd.
    Inventor: Akira Sanjoh
  • Patent number: 6150536
    Abstract: The present invention relates to an organic-inorganic hybrid material comprising an organic component and an inorganic component. The organic component comprises a dye that fluoresces in the visible range. In addition, an optically inert component may replace a portion of the organic dye component to increase fluorescence.
    Type: Grant
    Filed: July 8, 1999
    Date of Patent: November 21, 2000
    Assignee: International Business Machines Corporation
    Inventors: Konstantinos Chondroudis, David Brian Mitzi
  • Patent number: 6139626
    Abstract: A method for patterning materials according to a predetermined, three-dimensional pattern, as well as patterned materials produced by said methods, are provided. A template is prepared comprising a template material, the template having a plurality of pores therein, the plurality of pores comprising a negative of the predetermined, three-dimensional pattern. Colloidal nanocrystals sufficient to fill the pores in the template are also prepared. The pores in the template are filled with the colloidal nanocrystals. A quantum-dot solid is formed from the colloidal nanocrystals within the pores in the template, such that the colloidal nanocrystals are concentrated as close-packed nanocrystals within the pores in the template in the predetermined, three-dimensional pattern. If desired, a conventional solid may be obtained by sintering the close-packed nanocrystals within the pores of the template.
    Type: Grant
    Filed: September 4, 1998
    Date of Patent: October 31, 2000
    Assignee: NEC Research Institute, Inc.
    Inventors: David J. Norris, Yurii A. Vlasov
  • Patent number: 6126743
    Abstract: Disclosed is a process for producing dielectrics which satisfy the formula of:WXMO.sub.3 --(l--w)(XO.sub.y --aGO.sub.z)wherein the symbols are as defined in the specification, which comprises mixing an oxide of X, an oxide of M and an oxide of G or compounds capable of being converted to the above oxides so that the region occupied by the oxides or the compounds is smaller than 0.1 .mu.m in diameter and then, firing the mixture by heating at a temperature at which the mixture can be converted to oxides. A process for producing fine single crystal powders and a thin film capacitor are also disclosed.
    Type: Grant
    Filed: January 29, 1996
    Date of Patent: October 3, 2000
    Assignee: Sumitomo Chemical Company, Limited
    Inventors: Kunio Saegusa, Yutaka Suzuki
  • Patent number: 6123764
    Abstract: A manufacturing method for a single crystal of calcium fluoride includes the steps of degassing calcium fluoride powder particles to desorb impurities from surfaces of the calcium fluoride powder particles, preprocessing the degassed calcium fluoride powder particles by fusing the degassed calcium fluoride powder particles in a crucible to obtain a preprocessed product, and re-fusing the preprocessed product in a crucible to grow a single crystal of calcium fluoride.
    Type: Grant
    Filed: December 1, 1998
    Date of Patent: September 26, 2000
    Assignee: Nikon Corporation
    Inventors: Tsutomu Mizugaki, Kazuo Kimura, Shuuichi Takano
  • Patent number: 6110273
    Abstract: Provided is a method which can facilitate crystallization of a biological macromolecule such as protein. A silicon crystal whose valence electrons are controlled so that the concentration of holes or electrons in the surface part can be controlled in response to the environment of a buffer solution containing a biological macromolecule such as protein is brought into contact with the solution, for depositing a crystal of the biological macromolecule on the surface of the silicon crystal. A plurality of grooves or holes whose sizes differ from each other are formed on the silicon crystal, and the valence electrons are so controlled that crystallization of the biological macromolecule is facilitated inside rather than outside the grooves or holes. The crystal of the biological macromolecule grows in the grooves or holes coming into contact with the solution.
    Type: Grant
    Filed: December 23, 1998
    Date of Patent: August 29, 2000
    Assignee: Sumitomo Metal Industries, Ltd.
    Inventor: Akira Sanjoh
  • Patent number: 6106609
    Abstract: Nanocrystalline semiconductors are synthesized within a bicontinuous cubic atrix 10. The nanocrystalline particles 12 may then be end-capped 18 with a dispersant to prevent agglomeration. One typical nanocrystalline semiconductor compound made according to the present invention is PbS. Other IV-VI semiconductors may be produced by the method of the present invention. The method of this invention may also be used to produce doped semiconductors.
    Type: Grant
    Filed: April 8, 1997
    Date of Patent: August 22, 2000
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Jianping Yang, Banahalli R. Ratna
  • Patent number: 6090200
    Abstract: Nanocrystalline phosphors are formed within a bicontinuous cubic phase. The phosphors are doped with an optimum concentration, of manganese, for example, corresponding to about one or less dopant ions per phosphor particle.
    Type: Grant
    Filed: November 18, 1997
    Date of Patent: July 18, 2000
    Inventors: Henry F. Gray, Jianping Yang, David S. Y. Hsu, Banhalli R. Ratna, Syed B. Qadri
  • Patent number: 6022409
    Abstract: A method of optical enantiomer resolution by preferential crystallization involves entering, each time crystallization starts, the two-phase domain containing excess enantiomer and the saturated solution, and cooling according to a well-defined kinetic schedule. A racemic mixture of fine particle size is added to the mother liquors obtained after harvesting the crystals, the mother liquors then being heated to a temperature lower than that of homogenization of the solution so that excess enantiomer is present only in a solid state in equilibrium with the solution. Further cooling produces the other enantiomer and completes the cycle of operations which may then be carried out repetitively.
    Type: Grant
    Filed: October 2, 1996
    Date of Patent: February 8, 2000
    Assignee: The University of Rouen
    Inventors: Gerard Coquerel, Marie-Noelle Petit, Roger Bouaziz
  • Patent number: 6017390
    Abstract: The present invention relates to methods and compositions for the growth and alignment of crystals at biopolymeric films. The methods and compositions of the present invention provide means to generate a variety of dense crystalline ceramic films, with totally aligned crystals, at low temperatures and pressures, suitable for use with polymer and plastic substrates.
    Type: Grant
    Filed: July 22, 1997
    Date of Patent: January 25, 2000
    Assignee: The Regents of the University of California
    Inventors: Deborah H. Charych, Amir Berman
  • Patent number: 6001176
    Abstract: A device for specific formation of nuclei or crystals on the surface of a dielectric in contact with a solution, especially on the functional groups of a polymer, in which there is a device for generating an electric field in the dielectric.
    Type: Grant
    Filed: September 25, 1996
    Date of Patent: December 14, 1999
    Assignees: Klaus Leiter, Gerhard Walder
    Inventors: Klaus Leiter, Gerhard Walder
  • Patent number: 5993541
    Abstract: A process for controlling the formation of ceramics, achievable under ambient conditions, includes preparing a crystallization medium of a ceramic parent solution and spreading an organic monolayer of a hydrogen-bonded network on the air-liquid interface of the solution. For the formation of aragonite, the process uses an undoped calcium bicarbonate solution and a hydrogen-bonded network with a structural motif approximately matching a calcium ion distance in the a-c plane of aragonite. The aragonite product formed has a [010] axis approximately perpendicular to the monolayer. For perovskite materials, such as BSTO ceramics, the microstructure of the product is controlled by changing different functional groups of the organic monolayer which has been spread on the surface of a perovskite parent solution.
    Type: Grant
    Filed: July 31, 1996
    Date of Patent: November 30, 1999
    Inventors: Arkadi L. Litvin, Suresh Valiyaveettil, David L. Kaplan
  • Patent number: 5968265
    Abstract: A method for producing cubic SiC monocrystals includes dissolving SiC powder or other starting material in a solvent at high overpressures and growing the monocrystals on a seed crystal.
    Type: Grant
    Filed: January 27, 1998
    Date of Patent: October 19, 1999
    Assignee: Siemens Aktiengesellschaft
    Inventors: Rene Stein, Roland Rupp, Johannes Volkl
  • Patent number: 5961934
    Abstract: A method and apparatus for dynamically controlling the crystallization of proteins including a crystallization chamber or chambers for holding a protein in a salt solution, one or more salt solution chambers, two communication passages respectively coupling the crystallization chamber with each of the salt solution chambers, and transfer mechanisms configured to respectively transfer salt solution between each of the salt solution chambers and the crystallization chamber. The transfer mechanisms are interlocked to maintain the volume of salt solution in the crystallization chamber substantially constant. Salt solution of different concentrations is transferred into and out of the crystallization chamber to adjust the salt concentration in the crystallization chamber to achieve precise control of the crystallization process.
    Type: Grant
    Filed: February 18, 1998
    Date of Patent: October 5, 1999
    Assignee: Biospace International Inc.
    Inventors: Leonard Arnowitz, Emanuel Steinberg
  • Patent number: 5938837
    Abstract: Cerium oxide ultrafine particles consist essentially of cerium oxide single crystal grains having a grain size ranging from 10 to 80 nm and the cerium oxide ultrafine particles can be prepared by a method which comprises the steps of mixing, with stirring, an aqueous solution of cerous nitrate with a base in such a mixing ratio that the pH value of the mixture ranges from 5 to 10, then rapidly heating the resulting mixture up to a temperature of 70 to 100.degree. C. and maturing the mixture at that temperature. The cerium oxide ultrafine particles not only have an average particle size ranging from 10 to 80 nm, but also are uniform in the particle size and in the shape.
    Type: Grant
    Filed: September 25, 1996
    Date of Patent: August 17, 1999
    Assignee: Mitsui Mining and Smelting Co., Ltd.
    Inventors: Kenzo Hanawa, Naoyoshi Mochizuki, Naruo Ueda
  • Patent number: 5871579
    Abstract: A convenient two-step dipping technique for preparing high-quality thin films of a variety of perovskites is provided by the invention. Thin films of Mi.sub.2 (M=Pb, Sn) were first prepared by vacuum-depositing MI.sub.2 onto ash glass or quart substrates, which were subsequently dipped into a solution containing the desired organic ammonium cation for a short period of time. Using this technique, thin films of different layered organic-inorganic perovskites (RNH.sub.3).sub.2 (CH.sub.3 NH.sub.3).sub.n-1 M.sub.n I.sub.3n+1 (R=butyl, phenethyl; M=Pb, Sn; and n=1, 2) and three-dimensional perovskites CH.sub.3 NH.sub.3 MI.sub.3 (M=Pb, Sn; i.e. n=.infin.) were successfully prepared at room temperature. The lattice constants of these dip-processed perovskites are very similar to those of the corresponding compounds prepared by solution-growth or by solid state reactions. The layered perovskite thin films possess strong photoluminescence, distributed uniformly across the film areas.
    Type: Grant
    Filed: September 25, 1997
    Date of Patent: February 16, 1999
    Assignee: International Business Machines Corporation
    Inventors: Kangning Liang, David Brian Mitzi, Michael T. Prikas
  • Patent number: 5837054
    Abstract: Crystals formed of a solid-solution of NiSiF.sub.6 6H.sub.2 O provide very good materials for filtering ultraviolet light and will not deteriorate in temperatures as high as 115.degree. C. They are particularly useful in sensing devices which seek to identify the presence of ultraviolet light in the UV missile warning band.
    Type: Grant
    Filed: August 30, 1996
    Date of Patent: November 17, 1998
    Assignee: Northrop Grumman Corporation
    Inventors: Narsingh B. Singh, William D. Partlow, Steven Strauch, Albert M. Stewart, John F. Jackovitz, David W. Coffey, Robert Mazelski
  • Patent number: 5803966
    Abstract: A process employing a supercritical fluid anti-solvent for sizing prednisolone acetate is disclosed. The process optionally incorporates sterilization filters. Average particle sizes of about 1 .mu.m or less (number average) and narrow particle size ranges are obtainable. The process comprises the steps of (a) forming a solution by dissolving prednisolone acetate in acetone such that the concentration of prednisolone acetate is approximately 80% or less of its solubility in acetone; and (b) transporting the solution formed in step (a) through an orifice having a diameter of 50-100 .mu.m into a mixer/expander containing compressed CO.sub.2, wherein the compressed CO.sub.2 is at a temperature from about 40.degree. to 80.degree. C. and has a density less than the density of the solution by at least 0.3 g/cc, to expand the solution so that the acetone dissolves in the CO.sub.2 and the prednisolone acetate precipitates.
    Type: Grant
    Filed: November 1, 1995
    Date of Patent: September 8, 1998
    Assignee: Alcon Laboratories, Inc.
    Inventors: Alok K. Kulshreshtha, Garnet G. Smith, Scott D. Anderson, Val J. Krukonis
  • Patent number: 5800611
    Abstract: A single crystal silicon sheet is formed from a polycrystalline sheet by melting a relatively small portion of the sheet at an initial location and defining a single crystallographic orientation for the silicon by placing a small silicon seed crystal in contact with the melted silicon at the initial location. The melted portion is then moved from the initial location throughout the sheet to move impurities in the sheet to the edges of the sheet and to extend the crystallographic orientation of the silicon established at the initial location to the whole sheet, inwardly of the edges. The edges containing impurities and any remaining polycrystalline structure are removed to produce a sheet of single crystal silicon. A polycrystalline sheet may be formed by spreading a slurry of a silicon powder, a binder, and solvent on a surface and allowing the solvent to evaporate to form a sheet. The sheet is moistened to cause it to expand and sheer clear of the surface.
    Type: Grant
    Filed: September 8, 1997
    Date of Patent: September 1, 1998
    Inventor: Howard Christensen
  • Patent number: 5788765
    Abstract: Crystals formed of a solid-solution of K.sub.2 Ni(SO.sub.4).sub.2 6H.sub.2 O provide very good materials for filtering ultraviolet light and will not deteriorate in temperatures as high as 110.degree. C. They are particularly useful in sensing devices which seek to identify the presence of ultraviolet light in the UV missile warning band.
    Type: Grant
    Filed: August 30, 1996
    Date of Patent: August 4, 1998
    Assignee: Northrop Grumman Corporation
    Inventors: Narsingh B. Singh, William D. Partlow, Steven Strauch, Albert M. Stewart, John F. Jackovitz, David W. Coffey
  • Patent number: 5772755
    Abstract: Oriented materials are described in which particular crystalline materials are grown on a highly-oriented polytetrafluoroethylene substrate. Compositions are provided comprising a layer of aligned molecular chains of oriented polytetrafluoroethylene and an overlayer of a second polymer that imparts desired properties to the construction. A third layer of crystallizable, orientable material is then deposited on the overlayer. The third layer becomes oriented. The materials are useful as polarizers when the third layer is a polarizing dye.
    Type: Grant
    Filed: August 1, 1996
    Date of Patent: June 30, 1998
    Assignee: W. L. Gore & Associates, Inc.
    Inventors: Jack Hegenbarth, Diane R. Carpenter
  • Patent number: 5766342
    Abstract: The method for forming a silicon film of this invention includes the steps of introducing a compound containing silicon and chlorine and being in a liquid form under normal pressure and at an ordinary temperature into a reaction chamber, and spraying the compound in the liquid form in a fine particle state to a surface of a substrate supported in the reaction chamber, and decomposing the compound in the fine particle state by energy applied from outside of the reaction chamber, and depositing a silicon film on the substrate supported in the reaction chamber.
    Type: Grant
    Filed: October 17, 1995
    Date of Patent: June 16, 1998
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Munehiro Shibuya, Masatoshi Kitagawa, Yuji Mukai, Takashi Hirao, Akihisa Yoshida
  • Patent number: 5614018
    Abstract: A xylene exchange is performed on a stock solution of BST of greater then 99.999% purity dissolved in methoxyethanol, and a carboxylate of a dopant metal, such as magnesium 2-ethylhexanoate is added to form a precursor. The precursor is spun on a first electrode, dried at 400.degree. C. for 2 minutes, then annealed at 750.degree. C. to 800.degree. C. for about an hour to form a layer of accurately doped BST. A second electrode is deposited, patterned, and annealed at between 750.degree. C. to 800.degree. C. for about 30 minutes. Excellent leakage current results if the dopant is magnesium of about 5% molarity. For other dopants, such as Mg, Nb, Y, Bi, and Sn the preferred dopant range is 0.2% to 0.3% molarity. The magnesium-doped material is used as a buffer layer between the electrodes and BST dielectric of an undoped BST capacitor.
    Type: Grant
    Filed: July 11, 1994
    Date of Patent: March 25, 1997
    Assignees: Symetrix Corporation, Matsushita Electronics Corporation
    Inventors: Masamichi Azuma, Carlos A. Paz De Araujo, Michael C. Scott, Joseph D. Cuchiaro
  • Patent number: 5542372
    Abstract: This invention relates to a single crystallization process for purification of dimethyl terephtalate (DMT) by film crystallization, including pumping the raw DMT into a film crystallizer and reducing its temperature to form DMT crystalline on the walls of the crystallizing pipes in the crystallizer, and then heating the crystallizing pipes and collecting the melt at 140.degree.-145.degree. C. The product DMT is thus obtained.
    Type: Grant
    Filed: November 10, 1994
    Date of Patent: August 6, 1996
    Assignee: Tianjin Petro-Chemical Corporation
    Inventors: Xujiang Sun, Junmin Zhang, Tongshun Wang, Jun Zhang, Hong Su, Hongxia Xia
  • Patent number: 5499600
    Abstract: A crystal solution growth method for growing a crystal by providing a temperature difference between the higher and lower regions of a solvent, and disposing a source crystal at a high temperature region of the solution and a seed crystal at a low temperature region of the solution. The crystal solution growth method includes the steps of: placing the seed crystal on a recess of a heat sink, the heat sink being disposed under the solvent and the recess being defined on the top surface of the heat sink; placing a seed stopper on the seed crystal to fix the seed crystal, the seed stopper having a tubular part with an inner diameter generally same as the seed crystal and a seed crystal fixing part for fixing the seed crystal formed at one end of, the tubular part on the seed crystal side; and forming a temperature difference between the higher and lower regions of the solvent and growing a crystal oil the surface of the seed crystal.
    Type: Grant
    Filed: December 19, 1994
    Date of Patent: March 19, 1996
    Assignees: Stanley Electric Co., Ltd., Kanagawa Academy of Science and Technology
    Inventors: Yasuo Okuno, Shotaro Tomita, Hiroyuki Kato
  • Patent number: 5463976
    Abstract: A method for producing crystals of a diester phosphate monopotassium salt, comprising(a) reacting the diester phosphate of the formula (I) ##STR1## with potassium hydroxide in a solvent selected from the group consisting of isopropyl alcohol, methylene chloride and chloroform and(b) allowing crystals of the diester phosphate monopotassium salt to precipitate out. The EPC-K crystals produced by the production method of the present invention have extremely fine purity and crystal appearance. Accordingly, the present invention is advantageous in that provision of pharmaceutical preparation superior in efficacy, safety and stability has been made possible.
    Type: Grant
    Filed: March 29, 1995
    Date of Patent: November 7, 1995
    Assignee: Senju Pharmaceutical Co., Ltd.
    Inventor: Masayuki Nakamura
  • Patent number: 5363797
    Abstract: A method for producing an organic crystal is disclosed. One embodiment comprises maintaining a capillary tube containing a fused liquid of an organic crystal material and having a fused liquid reservoir at one end thereof at a temperature not less than the fusion point of the organic crystal material together with the fused liquid reservoir, reducing the temperature of the fused liquid in the fused liquid reservoir to precipitate seed crystals, and then slowly cooling the capillary tube successively from the end toward the other end to allow a single crystal to grow from the seed crystal in the capillary tube. Because of the large quantity of the fused liquid, a seed crystal can be formed and allowed to grow even from a fused liquid of an organic crystal material which hardly crystallizes in the form of a fused liquid.
    Type: Grant
    Filed: May 4, 1992
    Date of Patent: November 15, 1994
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Naota Uenishi, Takafumi Uemiya, Yo Shimizu, Akira Mizoguchi, Yasuji Oogaki, Yasuhiro Hattori, Shinsuke Umegaki
  • Patent number: 5360478
    Abstract: Disclosed is a method for recrystallizing solid materials (e.g. RDX) from systems comprised of a solute, which is the eventual material recrystallized, a liquid which is a suitable solvent for the solute, and a gaseous component which is soluble within the solvent and whose presence therein causes the solvent to approach or attain a supersaturated state, thereby precipitating (recrystallizing) the solute material. By control of process parameters (pressure, temperature, time, and rate, rate of injection of gas, etc.) the operator can influence the properties of the material recrystallized.
    Type: Grant
    Filed: June 28, 1991
    Date of Patent: November 1, 1994
    Assignee: Phasex Corporation
    Inventors: Val J. Krukonis, P. M. Gallagher, M. P. Coffey
  • Patent number: 5320703
    Abstract: A process for forming a gold thin film comprises subjecting a gold complex to a decomposition treatment to transfer the gold in a solution to a supersaturated state, and forming a crystalline gold thin film composed of a group of monocrystals on the surface of a substrate.
    Type: Grant
    Filed: May 8, 1992
    Date of Patent: June 14, 1994
    Assignee: Canon Kabushiki Kaisha
    Inventors: Tsutomu Ikeda, Hideo Kato, Masahiko Miyamoto, Ken Eguchi, Taichi Sugimoto, Haruki Kawada, Kiyoshi Takimoto, Toshihiko Takeda