Apparatus Characterized By Composition Or Treatment Thereof (e.g., Surface Finish, Surface Coating) Patents (Class 117/900)
  • Patent number: 9604279
    Abstract: Disclosed is a vessel for melting meltable material having a body with a melting portion configured to receive meltable material to be melted therein and an injection path for injecting the meltable material in molten form after melting (e.g., into a mold). The body has a recess configured to contain the meltable material within the vessel during melting of the material. The vessel is configured for movement between in a first position to restrict entry of molten material into an injection path of the vessel and to contain the material in the recess during melting, and a second position to allow movement of the material in a molten form through the injection path and into the mold (e.g., using a plunger). The vessel can be used in an injection molding system for molding bulk amorphous alloys.
    Type: Grant
    Filed: April 13, 2012
    Date of Patent: March 28, 2017
    Assignee: Apple Inc.
    Inventors: Sean Timothy O'Keeffe, Quoc Tran Pham, Theodore Andrew Waniuk, Michael Blaine Deming
  • Patent number: 9017479
    Abstract: The apparatus has a crucible for storing a solution; an inner container for storing a crucible; a heating container for storing the inner container, the heating container including heating elements, a container body provided with the heating elements and a lid combined with the container body; and a pressure vessel for storing the heating container and for charging an atmosphere comprising at least nitrogen gas. The lid also has a fitting surface to the container body that is inclined to a horizontal plane.
    Type: Grant
    Filed: July 29, 2008
    Date of Patent: April 28, 2015
    Assignees: NGK Insulators, Ltd., Osaka University, Toyoda Gosei Co., Ltd.
    Inventors: Makoto Iwai, Takanao Shimodaira, Takatomo Sasaki, Yusuke Mori, Fumio Kawamura, Shiro Yamasaki
  • Patent number: 8980004
    Abstract: A crucible for pulling a silicon single crystal has a double structure comprising a silica crucible and a graphite crucible covering an outside of the silica crucible, wherein the silica crucible is provided at its opening end portion with an inward falling prevention means for imparting a radially outward force to a body portion of the silica crucible.
    Type: Grant
    Filed: January 22, 2010
    Date of Patent: March 17, 2015
    Assignee: Japan Super Quartz Corporation
    Inventors: Masaru Sato, Masaki Morikawa
  • Patent number: 8951346
    Abstract: A silica glass crucible for pulling up a silicon single crystal including an outer layer formed from a natural silica glass layer, and an inner layer formed from a synthetic silica glass layer, wherein the synthetic silica glass layer includes a first synthetic silica glass layer formed in a region within a certain range from the center of a crucible bottom section, and a second synthetic silica glass layer formed in a region which excludes the formation region of the first synthetic silica glass layer, and wherein the first synthetic silica glass layer has a thickness of 0.5 mm or more and 1.5 mm or less and a concentration of an OH group included in the first synthetic silica glass layer being 100 ppm or less.
    Type: Grant
    Filed: December 8, 2009
    Date of Patent: February 10, 2015
    Assignee: Japan Super Quartz Corporation
    Inventors: Kazuhiro Harada, Masaki Morikawa, Satoshi Kudo
  • Patent number: 8851152
    Abstract: A system for producing cast components from molten metal. One form of the present invention includes a system for the precision pouring of molten metal within a casting mold. The precision pouring system is driven by a pressure differential.
    Type: Grant
    Filed: December 5, 2007
    Date of Patent: October 7, 2014
    Assignee: Rolls-Royce Corporation
    Inventors: Donald J. Frasier, M. Eric Schlienger, Matthew T. Kush
  • Patent number: 8844607
    Abstract: A system for producing cast components from molten metal. One form of the present invention includes a system for the precision pouring of molten metal within a casting mold. The precision pouring system is driven by a pressure differential.
    Type: Grant
    Filed: December 5, 2007
    Date of Patent: September 30, 2014
    Assignee: Rolls-Royce Corporation
    Inventors: Donald J. Frasier, Guy Allen Brady, Matthew T. Kush, Patrick A. Vessely
  • Patent number: 8747554
    Abstract: A unibody, multi-piece crucible for use in for use in elemental purification, compounding, and growth of semi-conductor crystals, e.g., in the process of molecular beam epitaxy (MBE) for melting silicon and the like at high temperature. The crucible has an outer coating layer that fixedly joins the multi pieces making up the crucible. The invention also provides a method for making a unibody containing structure comprising pyrolytic boron nitride having a negative draft, which method obviates the need of complicated overhang structure of graphite mandrels or the removal of the graphite mandrels by burning at high temperatures.
    Type: Grant
    Filed: October 30, 2006
    Date of Patent: June 10, 2014
    Assignee: Momentive Performance Materials Inc.
    Inventors: Yuji Morikawa, Kazuo Kawasaki, Sun-joong Hwang, Marc Schaepkens
  • Patent number: 8555674
    Abstract: A quartz glass crucible for silicon single crystal pulling operation that by a simple arrangement, attains prevention of any collapse onto the inside at a superior edge of straight trunk part; and a process for manufacturing the same. The quartz glass crucible for silicon single crystal pulling operation having a straight trunk part and a bottom part, is characterized in that at least the straight trunk part is provided with a gradient of fictive temperature so that the fictive temperature on the outermost side thereof is 25° C. or more lower than the fictive temperature on the innermost side thereof.
    Type: Grant
    Filed: May 23, 2008
    Date of Patent: October 15, 2013
    Assignees: Heraeus Quarzglas GmbH & Co. KG, Shin-Etsu Quartz Products Co., Ltd.
    Inventor: Yasuo Ohama
  • Patent number: 8277559
    Abstract: A quartz glass crucible which has a non-transparent outer layer formed through melting a natural silica powder and a transparent layer formed in the inside of the outer layer, wherein the transparent layer comprises a natural quartz layer having a thickness of 0.4 to 5.0 mm transparent layer comprising a synthetic quarts glass is formed thereon in the inside of the crucible in the range of 0.15 to 0.55 L relative to L, which is the distance from the center of the bottom of the inner surface of the quartz glass crucible to the upper end thereof along the inner surface thereof. The quartz glass crucible can be suitably used for suppressing the occurrence of vibration and reducing the generation of roughened face in the surface of a crucible, and thus for pulling up a silicon single crystal with enhanced stability.
    Type: Grant
    Filed: April 26, 2004
    Date of Patent: October 2, 2012
    Assignees: Heraeus Quarzglas GmbH & Co. KG, Shin-Estu Quartz Products Co., Ltd.
    Inventor: Yasuo Ohama
  • Patent number: 8172945
    Abstract: A high-purity vitreous silica crucible used for pulling a large-diameter single-crystal silicon ingot, includes a double layered structure constituted by an outer layer composed of high-purity amorphous vitreous silica with a bubble content of 1 to 10% and a purity of 99.99% or higher, and an inner layer composed of high-purity amorphous vitreous silica s with a bubble content of 0.6% or less and a purity of 99.99% or higher, wherein, at least for an inner surface of the vitreous silica crucible between ingot-pulling start line and ingot-pulling end line of a silicon melt surface, a longitudinal section of the inner surface is shaped into a waveform, and depth and width of the ring grooves constituting the multi ring-groove patterned face are set in the range of 0.5 to 2 mm and 10 to 100 mm, respectively.
    Type: Grant
    Filed: November 28, 2008
    Date of Patent: May 8, 2012
    Assignee: Japan Super Quartz Corporation
    Inventor: Atushi Shimazu
  • Patent number: 8152920
    Abstract: A crucible and method for the crystallization of silicon utilize release coatings. The crucible is used in the handling of molten materials that are solidified in the crucible and then removed as ingots. The crucible does not require the preparation of a very thick coating at the end user facilities, is faster and cheaper to produce, presents an improved release effect and allows the production of silicon ingot without cracks. The crucible includes a base body, a substrate layer containing silicon nitride, an intermediate layer containing silica, and a surface layer containing silicon nitride, silicon dioxide and silicon.
    Type: Grant
    Filed: June 30, 2006
    Date of Patent: April 10, 2012
    Assignee: Vesuvius Crucible Company
    Inventor: Gilbert Rancoule
  • Patent number: 8142565
    Abstract: A vitreous silica crucible for pulling single-crystal silicon, which is formed of vitreous silica and has a bottomed cylindrical shape, wherein, in a liquid-level movement range in the inner surface of the crucible, ranging from a position corresponding to the liquid surface level of a silicon melt at the time of stating the pulling of single-crystal silicon to a position corresponding to the liquid surface level of a silicon melt at the time of finishing the pulling of single-crystal silicon, the concentration of an OH group included in the vitreous silica is higher in an erosion thickness portion of the inner surface of the crucible than that in the range lower than the liquid surface level which is positioned below the liquid-level movement range.
    Type: Grant
    Filed: November 28, 2008
    Date of Patent: March 27, 2012
    Assignee: Japan Super Quartz Corporation
    Inventors: Hiroshi Kishi, Minoru Kanda
  • Patent number: 8123856
    Abstract: In the flux method, a source nitrogen gas is sufficiently heated before feeding to an Na—Ga mixture. The apparatus of the invention is provided for producing a group III nitride based compound semiconductor. The apparatus includes a reactor which maintains a group III metal and a metal differing from the group III metal in a molten state, a heating apparatus for heating the reactor, an outer vessel for accommodating the reactor and the heating apparatus, and a feed pipe for feeding a gas containing at least nitrogen from the outside of the outer vessel into the reactor. The feed pipe has a zone for being heated together with the reactor by means of the heating apparatus, wherein the zone is heated inside the outer vessel and outside the reactor.
    Type: Grant
    Filed: April 5, 2007
    Date of Patent: February 28, 2012
    Assignees: Toyoda Gosei Co., Ltd., NGK Insulators, Ltd., Osaka University
    Inventors: Shiro Yamazaki, Makoto Iwai, Takanao Shimodaira, Takatomo Sasaki, Yusuke Mori, Fumio Kawamura
  • Patent number: 8101021
    Abstract: A population of nanocrystals having a narrow and controllable size distribution and can be prepared by a segmented-flow method.
    Type: Grant
    Filed: December 13, 2007
    Date of Patent: January 24, 2012
    Assignee: Massachusetts Institute of Technology
    Inventors: Brian Yen, Axel Guenther, Klavs F. Jensen, Moungi G. Bawendi, Martin Schmidt
  • Patent number: 8034300
    Abstract: This apparatus for producing trichlorosilane includes: a vessel having a gas inlet that introduces a feed gas into the vessel and a gas outlet that discharges a reaction product gas to the outside; a plurality of silicon core rods provided inside the vessel; and a heating mechanism that heats the silicon core rods, wherein a feed gas containing silicon tetrachloride and hydrogen is reacted to produce a reaction product gas containing trichlorosilane and hydrogen chloride. The silicon core rods may be disposed so as to stand upright on the bottom of the vessel, and the heating mechanism may have electrode portions that hold the lower end portions of the silicon core rods on the bottom of the vessel and a power supply that applies an electric current to the silicon core rods through the electrode portions to heat the silicon core rods.
    Type: Grant
    Filed: November 27, 2007
    Date of Patent: October 11, 2011
    Assignee: Mitsubishi Materials Corporation
    Inventor: Toshiyuki Ishii
  • Patent number: 7993454
    Abstract: A surface modified quartz glass crucible and a process for modifying the crucible includes a layer of a metal oxide on the whole or a part of the inside and/or outside of the crucible, and baking it. At least an inside surface of the crucible is coated with a said metal oxide of magnesium, calcium, strontium or barium. The coated layer of the crucible does not abrade easily and provides a high dislocation free ratio of silicon single crystals pulled by using the crucible.
    Type: Grant
    Filed: March 3, 2010
    Date of Patent: August 9, 2011
    Assignee: Japan Super Quartz Corporation
    Inventors: Toshio Tsujimoto, Yoshiyuki Tsuji
  • Patent number: 7959732
    Abstract: Apparatus and method for growing a crystal from a melt of a growth material, wherein crystal growth occurs at a solid-liquid interface between the melt and the crystal, and a characteristic of the solid-liquid interface is determined by using a float atop the melt and a detector for detecting displacement of the float. The characteristic of the solid-liquid interface can be at least one of the following: position, velocity or acceleration of the solid-liquid interface.
    Type: Grant
    Filed: June 19, 2006
    Date of Patent: June 14, 2011
    Assignee: Saint-Gobain Ceramics & Plastics, Inc.
    Inventors: Jan Jozef Buzniak, Valery Prunier
  • Patent number: 7909931
    Abstract: The present invention provides a silica glass crucible for manufacturing a silicon single crystal, in which melt vibration can be controlled more certainly and a high yield of single crystal can be realized. A first substantially bubble-free layer 10a having a thickness of 100 ?m-450 ?m is formed on the inner periphery side of an initial melt line zone 10 which has a height of 10 mm-30 mm, of a transparent layer, a bubble-containing layer 10b having a thickness of 100 ?m or more and bubbles with an average diameter of 20 ?m-60 ?m is formed outside the above-mentioned first substantially bubble-free layer 10a, and a second substantially bubble-free layer 10c having a thickness of 300 ?m or more is formed on the inner periphery side in the whole region lower than the above-mentioned initial melt line zone 10.
    Type: Grant
    Filed: March 30, 2007
    Date of Patent: March 22, 2011
    Assignee: Covalent Materials Corporation
    Inventors: Ryouhei Saito, Toshiyuki Kikuchi, Kiyoaki Misu, Kazuko Fukutani, Kazuyoshi Kato
  • Patent number: 7901508
    Abstract: An approach for the growth of high-quality epitaxial silicon carbide (SiC) films and boules, using the Chemical Vapor Deposition (CVD) technique is described here. The method comprises modifications in the design of the typical cold-wall CVD reactors, providing a better temperature uniformity in the reactor bulk and a low temperature gradient in the vicinity of the substrate, and an approach to increase the silicon carbide growth rate and to improve the quality of the growing layers, using halogenated carbon-containing precursors (carbon tetrachloride CCl4 or halogenated hydrocarbons, CHCl3, CH2Cl2, CH3Cl, etc.), or introducing other chlorine-containing species in the gas phase in the growth chamber. The etching effect, proper ranges, and high temperature growth are also examined.
    Type: Grant
    Filed: January 24, 2007
    Date of Patent: March 8, 2011
    Assignee: Widetronix, Inc.
    Inventors: Yuri Makarov, Michael Spencer
  • Patent number: 7837794
    Abstract: A vapor phase growth apparatus and a vapor phase growth method improve the uniformity of film formed are provided. The vapor phase growth apparatus includes a chamber, a rotatable holder having a susceptor, an internal heater and an external heater which are arranged in the holder and heat the wafer from the bottom surface, an gas-pipe which is arranged to face the internal heater and sprays a cooling gas, and a temperature measuring unit which is arranged outside the chamber and measures the surface temperature of the wafer. In this manner, a position of a singular point of temperature which is an overheated portion generated on the wafer can be recognized. The singular point of temperature is locally cooled to make it possible to improve the uniformity of a temperature distribution in plane of the wafer.
    Type: Grant
    Filed: March 24, 2008
    Date of Patent: November 23, 2010
    Assignee: NuFlare Technology, Inc.
    Inventors: Hideki Ito, Shinichi Mitani
  • Patent number: 7824494
    Abstract: A system for producing cast components from molten metal. One form of the present invention includes a system for the precision pouring of molten metal within a casting mold. The precision pouring system is driven by a pressure differential.
    Type: Grant
    Filed: December 5, 2007
    Date of Patent: November 2, 2010
    Assignee: Rolls-Royce Corporation
    Inventors: Donald J. Frasier, M. Eric Schlienger, Guy Allen Brady, Matthew T. Kush, Patrick A. Vessely
  • Patent number: 7815849
    Abstract: An iridium alloy is produced having at least 85% by weight iridium, at least 0.005% by weight molybdenum, 0.001 to 0.6% by weight hafnium and, optionally, rhenium, the sum of molybdenum and hafnium being between 0.002 and 1.2% by weight. The iridium alloy is produced in a process, in which an IrMo and an IrHf master alloy, respectively, are created in an electric arc and immersed into an iridium melt, optionally together with Re.
    Type: Grant
    Filed: July 7, 2006
    Date of Patent: October 19, 2010
    Assignee: W.C. Heraeus GmbH
    Inventors: Michael Koch, David Francis Lupton, Harald Manhardt, Tobias Mueller, Reinhold Weiland, Bernd Fischer
  • Patent number: 7718002
    Abstract: A crystal manufacturing apparatus for manufacturing a group III nitride crystal includes a crucible that holds a mixed molten liquid including an alkali metal and a group III metal; a reaction vessel accommodating the crucible in the reaction vessel; a heating device that heats the crucible with the reaction vessel; a holding vessel having a lid that is capable of opening and closing, accommodating the reaction vessel and the heating device in the holding vessel; a sealed vessel accommodating the holding vessel in the sealed vessel, having an operating device that enables opening the lid of the holding vessel for supplying source materials into the crucible and taking out a manufactured GaN crystal under a sealed condition, and closing the lid of the holding vessel that is sealed in the sealed vessel, the sealed vessel including an inert gas atmosphere or a nitrogen atmosphere; and a gas supplying device for supplying a nitrogen gas to the mixed molten liquid through each of the vessels.
    Type: Grant
    Filed: March 5, 2008
    Date of Patent: May 18, 2010
    Assignee: Ricoh Company, Ltd.
    Inventors: Seiji Sarayama, Hirokazu Iwata
  • Patent number: 7708833
    Abstract: An object of the invention is to carry out the flux method with improved work efficiency while maintaining the purity of flux at high level and saving flux material cost. The sodium-purifying apparatus includes a sodium-holding-and-management apparatus for maintaining purified sodium (Na) in a liquid state. Liquid sodium is supplied into a sodium-holding-and-management apparatus through a liquid-sodium supply piping maintained at 100° C. to 200° C. The sodium-holding-and-management apparatus further has an argon-gas-purifying apparatus for controlling the condition of argon (Ar) gas that fills the internal space thereof. Thus, by opening and closing a faucet at desired timing, purified liquid sodium (Na) supplied from the sodium-purifying apparatus can be introduced into a crucible as appropriate via the liquid-sodium supply piping, the sodium-holding-and-management apparatus, and the piping.
    Type: Grant
    Filed: March 11, 2008
    Date of Patent: May 4, 2010
    Assignees: Toyoda Gosei Co., Ltd., NGK Insulators, Ltd.
    Inventors: Shiro Yamazaki, Koji Hirata, Takayuki Sato, Seiji Nagai, Katsuhiro Imai, Makoto Iwai, Shuhei Higashihara, Takatomo Sasaki, Yusuke Mori, Fumio Kawamura
  • Patent number: 7704325
    Abstract: A crystal forming apparatus and method for using the apparatus, the method including depositing a precipitant solution in a site, incubating the site, during which time volatile vapor evaporates from the precipitant solution and accumulates in the site, and pumping the accumulated volatile vapor away from the site. An exemplary apparatus includes a sealed site except for a vent on the sealed site. In one embodiment, the vent is a passive vent that inhibits vapor diffusion out of the site. In another embodiment, the vent is an active vent that opens in response to a pressure differential. The present invention accelerates and controls the crystal growth process by pumping volatile vapor away from the sealed site.
    Type: Grant
    Filed: January 2, 2008
    Date of Patent: April 27, 2010
    Assignee: Neuro Probe Incorporated
    Inventor: Richard H. Goodwin, Jr.
  • Patent number: 7686887
    Abstract: An object of the invention is to provide a quartz glass crucible reduced in the generation of vibration occurring on the surface of a silicon melt and free from the generation of rough surface and cristobalite spots, yet capable of pulling up single crystal silicon stably and at high yield even in long-term operations; it is also an object to provide a method for producing the same. In a quartz glass crucible for pulling up single crystal silicon comprising a crucible base body having a bottom part and a straight shell part with an inner layer provided to the inner surface thereof, the quartz glass crucible is characterized by that said inner layer comprises a synthetic quartz glass layer from the lowest end to at least a height of 0.25 H; a naturally occurring quartz glass layer or a mixed layer of naturally occurring quartz glass and synthetic quartz glass extended in a range of from at least 0.5 H to 0.
    Type: Grant
    Filed: July 30, 2003
    Date of Patent: March 30, 2010
    Assignees: Heraeus Quarzglas GmbH & Co. KG, Shin-Etsu Quartz Products Co., Ltd.
    Inventors: Yasuo Ohama, Takayuki Togawa
  • Patent number: 7662231
    Abstract: The invention relates to the production of a cable rotating head, which is devoid of an abrasion ring, for a Czochralski-crystal drawing system which is used to drive a drawing cord in an azimuthal and vertical manner and the nucleus of a crystal is fixed therein. According to the invention, the cord rotating head comprises a cord winding mechanism which can be supported by a vertical hollow shaft, through which the drawing cord is suspended in the crystal drawing system, and the cord rotating head is rotationally mounted about the axis thereof and can be offset by a rotation motor, which is secured to the crystal drawing system, together with the cord winding mechanism and the drawing cord in a rotational movement, and said vertical hollow shaft is surrounded in a coaxial manner by a double toothed gear which is rotationally mounted opposite to the hollow shaft and can be driven by a drawing motor which is secured to the crystal drawing system.
    Type: Grant
    Filed: March 11, 2005
    Date of Patent: February 16, 2010
    Assignee: Crystal Growing Systems GmbH
    Inventor: Andreas Mühe
  • Patent number: 7604698
    Abstract: A cooling structure for the body of a crystal-growing furnace includes an upper body and a lower body. The upper body includes an outer upper shell and an inner upper shell, wherein an upper enclosing space is formed between the outer upper shell and the inner upper shell. The lower body includes an outer lower shell and an inner lower shell, wherein a lower enclosing space is formed between the outer lower shell and the inner lower shell. A plurality of water pipes are arranged, respectively, around the upper and the lower enclosing spaces, wherein plural spraying holes are provided on each of the water pipes. With the help of a pump, water from an outside water source is drawn through the spraying holes of the water pipes so as to cool down the body of the crystal-growing furnace. In adding an exhaust fan, warm air in the upper enclosing spaces can be driven out speedily.
    Type: Grant
    Filed: May 28, 2008
    Date of Patent: October 20, 2009
    Assignee: Green Energy Technology Inc.
    Inventors: Shiow-Jeng Lew, Hur-Lon Lin
  • Patent number: 7588638
    Abstract: A single crystal pulling apparatus having a heater 4 melting material silicon by thermal radiation from a cylindrical exothermic part 4a which surrounds a crucible 3 inside a furnace body 2 and an electromagnet 13 which is prepared to surround the furnace body 2 and applies a transverse magnetic field to the silicon liquid melt in the crucible 3 is provided. A length h in a pull-up axis direction in the exothermic part 4a of the heater 4 is arranged to be 0.5 times to 0.9 times an inner diameter of the crucible 3, a first middle position in the pull-up axis direction in the exothermic part 4a is arranged below a second middle position in the pull-up axis direction in the electromagnet 13, and a distance difference d between the first and second middle positions is 0.15 times to 0.55 times the inner diameter R of the crucible 3.
    Type: Grant
    Filed: January 29, 2008
    Date of Patent: September 15, 2009
    Assignee: Covalent Materials Corporation
    Inventor: Toshio Hisaichi
  • Patent number: 7572335
    Abstract: A crystallization apparatus includes an illumination system which illuminates a phase-shift mask and an image-forming optical system arranged in an optical path between the phase-shift mask and a semiconductor film. The semiconductor film is irradiated with a light beam having a light intensity distribution of inverted peak patterns whose light intensity is the lowest in portions corresponding to phase shift sections to form a crystallized semiconductor film. The image-forming optical system is located to optically conjugate the phase-shift mask and the semiconductor film and has an aberration corresponding to the given wavelength range to form a light intensity distribution of inverted peak patterns with no swell of intensity in the middle portion.
    Type: Grant
    Filed: October 6, 2004
    Date of Patent: August 11, 2009
    Assignee: Advanced LCD Technologies Development Center Co., Ltd.
    Inventors: Yukio Taniguchi, Masakiyo Matsumura, Hirotaka Yamaguchi, Mikihiko Nishitani, Susumu Tsujikawa, Yoshinobu Kimura, Masayuki Jyumonji
  • Patent number: 7491270
    Abstract: A heat shielding member 20 that thermally shields the periphery of a single crystal 16 used in a Czochralski single crystal pulling device that pulls the single crystal 16 from a melt 15 that is collected in a crucible 10 is disclosed. The heat shielding member 20 is provided with an approximately cylindrical main body portion 21 arranged so as to surround the single crystal 16, with a lower end portion thereof extending to the vicinity of the melt 15, and an approximately annular bottom plate portion 22 that extends in the diameter direction from the bottom end portion of the main body portion 21 to cover the melt. The bottom plate portion 22 is attached to the main body portion 21 in the state of being severed in the circumferential direction at at least one location. With this constitution it is possible to provide a heat shielding member with superior durability and a single crystal pulling device that employs the heat shielding member.
    Type: Grant
    Filed: October 26, 2004
    Date of Patent: February 17, 2009
    Assignee: Sumco Corporation
    Inventors: Hitoshi Sasaki, Syunji Kuragaki
  • Patent number: 7473317
    Abstract: A crystal growth crucible made of boron nitride includes a cylindrical tip portion for accommodating a seed crystal, and a cylindrical straight-body portion for growing a crystal, which is formed above the tip portion and has a diameter larger than that of the tip portion. Thickness T1 of the tip portion and thickness T2 of the straight-body portion satisfy a condition of 0.1 mm?T2<T1?5 mm, and inside diameter D2 and length L2 of the straight-body portion satisfy conditions of 100 mm<D2 and 2<L2/D2<5.
    Type: Grant
    Filed: March 9, 2006
    Date of Patent: January 6, 2009
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventor: Yoshiaki Hagi
  • Patent number: 7462238
    Abstract: A crystal growth apparatus comprises a reaction vessel holding a melt mixture containing an alkali metal and a group III metal in a vessel space thereof, a porous member holding a metal melt by a surface tension thereof in a path through which a vapor of the alkali metal in contact with the metal mixture in the vessel space escapes to an external space, the porous member further supplying a nitrogen source gas fed from outside thereto further to the reaction vessel therethrough and through the metal melt by a pressure difference formed between the vessel space in the reaction vessel and the external space, and a heating apparatus heating the melt mixture to a crystal growth temperature.
    Type: Grant
    Filed: August 4, 2006
    Date of Patent: December 9, 2008
    Assignees: Ricoh Company, Ltd., Japan Atomic Energy Agency
    Inventors: Seiji Sarayama, Hirokazu Iwata, Akihiro Fuse, Kuniaki Ara, Junichi Saito
  • Patent number: 7455731
    Abstract: A polycrystalline silicon rod according to present invention has a structure for hanging of polycrystalline silicon rods to each other end-to-end, so that the efficiency of melting polycrystalline silicon can be increased considerably. A polycrystalline silicon rod obtained by entirely or partially removing a peripheral portion from the rod to leave a central portion, and processing the central portion, preferably, the peripheral portion is removed by grinding in an amount corresponding to 10 to 60% of the diameter of the rod, and then subjected to groove-forming processing. This makes annealing unnecessary.
    Type: Grant
    Filed: May 1, 2006
    Date of Patent: November 25, 2008
    Assignee: Mitsubishi Materials Corporation
    Inventors: Mamoru Nakano, Yukio Yamaguchi, Teruhisa Kitagawa, Rikito Sato, Naoki Hatakeyama
  • Patent number: 7449066
    Abstract: An apparatus for fabricating a GaN single crystal and a fabrication method for producing GaN single crystal ingot are provided. The apparatus includes: a reactor including a ceiling, a floor and a wall with a predetermined height encompassing an internal space between the ceiling and the floor, wherein the ceiling is opposite to the floor; a quartz vessel on the floor containing Ga metal; a mount installed on the ceiling on which a GaN substrate is mounted, the GaN substrate being opposite to the quartz vessel; a first gas supplying unit supplying the quartz vessel with hydrogen chloride (HCl) gas; a second gas supplying unit supplying the internal space of the reactor with ammonia (NH3) gas; and a heating unit installed in conjunction with the wall of the reactor for heating the internal space, wherein the lower portion of the internal space is heated to a higher temperature than the upper portion.
    Type: Grant
    Filed: November 8, 2007
    Date of Patent: November 11, 2008
    Assignee: Samsung Corning Co., Ltd.
    Inventor: Jai-yong Han
  • Patent number: 7442255
    Abstract: The bottom of the crucible has much greater thermal transfer properties, parallel to an axis substantially perpendicular to the bottom, than those of the side walls. The bottom and side walls are formed by materials having the same main chemical constituents. The bottom can be transparent to infrared radiation and the side walls opaque to infrared radiation. The bottom can be made of amorphous silica and the side walls of opaque quartz ceramic. The crucible can also be made of graphite. The device can comprise a graphite felt, arranged between the bottom of the crucible and cooling means, and compression means of the graphite felt. It is thus possible to define a temperature gradient comprised between 8° C./cm and 30° C./cm in the liquid phase.
    Type: Grant
    Filed: April 9, 2004
    Date of Patent: October 28, 2008
    Assignees: Apollon Solar, Cyberstar, EFD Induction SA
    Inventors: Roland Einhaus, Francois C. Lissalde, Pascal Rivat
  • Patent number: 7422631
    Abstract: The present invention relates to silicon nitride mould parts, particularly crucibles for use in connection with directional solidification and pulling of silicon single crystals. The mould parts consist of Si3N4 having a total open porosity between 40 and 60% by volume and where more than 50% of the pores in the surface of the mould parts have a size which is larger than the means size of the Si3N4 particles. The invention further relates to a method for producing the silicon nitride mould parts.
    Type: Grant
    Filed: August 13, 2003
    Date of Patent: September 9, 2008
    Assignee: Crusin AS
    Inventors: Espen Olsen, Arve Solheim, Havard Sorheim
  • Patent number: 7383696
    Abstract: A silica glass crucible includes a stable, bubble-free inner layer and an opaque outer layer, both layers demonstrating reduced bubble growth during a Czochralski process. When used in the CZ process, little volume change is observed in the crucible wall, and the crucible has little influence on melt level. The present crucible is especially suited for slow silicon ingot pulling with reduced crystalline defects. The fusion process of the present invention controls the dynamic gas balance at the fusion front where formed grain is melted to dense fused silica.
    Type: Grant
    Filed: September 8, 2005
    Date of Patent: June 10, 2008
    Assignee: Heraeus Shin-Etsu America, Inc.
    Inventors: Katsuhiko Kemmochi, Robert Mosier, Yasuo Ohama
  • Patent number: 7381397
    Abstract: Methods and apparatus for preconditioning a lithium niobate or lithium tantalate crystal. At least a portion of a surface of the crystal is covered with a condensed material including one or more active chemicals. The crystal is heated in a non-oxidizing environment above an activating temperature at which the active chemicals contribute to reducing the crystal beneath the covered surface portion. The crystal is cooled from above the activating temperature to below a quenching temperature at which the active chemicals become essentially inactive for reducing the crystal.
    Type: Grant
    Filed: December 2, 2005
    Date of Patent: June 3, 2008
    Assignee: Crystal Technology, Inc.
    Inventors: Dieter Hans Jundt, Maria Claudia Custodio Kajiyama
  • Patent number: 7361223
    Abstract: A method for eliminating a display defect in a liquid crystal display device includes disposing a liquid crystal panel adhered with a polarizer into a first buffer chamber, increasing pressure of the first buffer chamber, communicating the first buffer chamber with a reactor chamber having a predetermined pressure, transferring the liquid crystal panel from the first buffer chamber to the reactor chamber, increasing pressure of a second buffer chamber, communicating the second buffer chamber with the reactor chamber, and transferring the liquid crystal panel from the reactor chamber to the second buffer chamber.
    Type: Grant
    Filed: July 27, 2005
    Date of Patent: April 22, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seung-Hee Her, Tai-Huem Om, Jin-Whal Kim, Min-Young Won, Kun-Jong Lee
  • Patent number: 7344596
    Abstract: To reduce the heat input to the bottom of the crucible and to control heat extraction independently of heat input, a shield can be raised between a heating element and a crucible at a controlled speed as the crystal grows. Other steps could include moving the crucible, but this process can avoid having to move the crucible. A temperature gradient is produced by shielding only a portion of the heating element; for example, the bottom portion of a cylindrical element can be shielded to cause heat transfer to be less in the bottom of the crucible than at the top, thereby causing a stabilizing temperature gradient in the crucible.
    Type: Grant
    Filed: August 25, 2005
    Date of Patent: March 18, 2008
    Assignee: Crystal Systems, Inc.
    Inventors: Frederick Schmid, Chandra P. Khattak, David B. Joyce
  • Patent number: 7344597
    Abstract: A vapor-phase growth apparatus includes: at least a reaction furnace which is hermetically closable, a wafer container which is disposed in the reaction furnace, for disposing a wafer at a predetermined position, a gas supply member for supplying a source gas toward the wafer, and a heating member for heating the wafer, wherein the apparatus is designed to form a grown film on a front surface of the wafer by supplying the source gas in a high temperature state while the heating member heats the wafer in the reaction furnace through the wafer container. The wafer container is made of a single material or a single member, and has a ratio R2/R1, which is not less than 0.4 to not more than 1.0, where R1 is a heat resistance for a heat transfer route from a rear surface of the wafer container toward the front surface of the wafer, and R2 is a heat resistance for a heat transfer route from the rear surface of the wafer container toward a front surface of the wafer container.
    Type: Grant
    Filed: October 16, 2002
    Date of Patent: March 18, 2008
    Assignee: Nippon Mining & Metals Co., Ltd.
    Inventors: Eiichi Shimizu, Nobuhito Makino
  • Patent number: 7335260
    Abstract: A laser annealing apparatus for sequential lateral solidification (SLS) to uniformly crystallize silicon on an entire silicon substrate by minimizing the dislocation of the silicon substrate during laser beam irradiation is disclosed. During the laser annealing, a vacuum chuck holds the silicon substrate on a movable stage. The device includes a laser source, an optical system patterning the shape and energy of a laser beam irradiated from the laser source, a vacuum chuck supporting a silicon substrate, and a movable stage supporting the vacuum chuck as well as transferring the vacuum chuck in a predetermined direction. Accordingly, the apparatus improves the degree of crystallization because it is able to uniformly carry out SLS on an entire surface of the silicon substrate.
    Type: Grant
    Filed: July 8, 2004
    Date of Patent: February 26, 2008
    Assignee: LG.Philips LCD Co., Ltd.
    Inventor: Yun-Ho Jung
  • Patent number: 7318865
    Abstract: A manufacturing method of an electronic device includes positioning a processed substrate with respect to a substrate stage of a crystallization apparatus and supporting it with at least one positioning mark previously provided on the processed substrate being used as a references, applying a modulated light beam to a predetermined area of the processed substrate supported by the substrate stage and crystallizing the area, and forming at least one circuit element in the crystallized area of the processed substrate subjected to positioning with the positioning mark being used as a reference.
    Type: Grant
    Filed: December 8, 2004
    Date of Patent: January 15, 2008
    Assignee: Advanced LCD Technologies Development Center Co., Ltd.
    Inventors: Noritaka Akita, Yoshio Takami
  • Patent number: 7311778
    Abstract: A method of processing a polycrystalline film on a substrate includes generating a plurality of laser beam pulses, positioning the film on a support capable of movement in at least one direction, directing the plurality of laser beam pulses through a mask to generate patterned laser beams; each of said beams having a length l?, a width w? and a spacing between adjacent beams d?, irradiating a region of the film with the patterned beams, said beams having an intensity that is sufficient to melt an irradiated portion of the film to induce crystallization of the irradiated portion of the film, wherein the film region is irradiated n times; and after irradiation of each film portion, translating either the film or the mask, or both, a distance in the x- and y-directions, where the distance of translation in the y-direction is in the range of about 1?/n-?, where ? is a value selected to form overlapping the beamlets from the one irradiation step to the next, and where the distance of translation in the x-direction
    Type: Grant
    Filed: September 17, 2004
    Date of Patent: December 25, 2007
    Assignee: The Trustees of Columbia University in the City of New York
    Inventors: James S. Im, Paul Christiaan van der Wilt
  • Patent number: 7299658
    Abstract: A quartz glass crucible for use in pulling up a silicon single crystal, wherein it has, at least in the curved portion thereof, a three-layer structure comprising a transparent inner layer being composed of a synthetic quartz glass and having a low Al concentration, a transparent or nontransparent intermediate layer being composed of a natural quartz glass or a mixture of natural and synthetic quartz glasses and having a high Al concentration, and a nontransparent outer layer being composed of a natural quartz glass and having an Al concentration higher than that of the intermediate layer. The quartz glass crucible is reduced in the deformation of the transparent inner layer, and allows the suppression of the change in the amount of dissolution of the quartz glass crucible associated with the pull-up of a single crystal and the achievement of the uniform oxygen concentration in the longitudinal direction of a single crystal.
    Type: Grant
    Filed: May 21, 2004
    Date of Patent: November 27, 2007
    Assignees: Heraeus Quarzglas GmbH & Co. K.G., Shin-Etsu Quartz Products Co. Ltd.
    Inventors: Yasuo Ohama, Takayuki Togawa, Shigeo Mizuno
  • Patent number: 7270706
    Abstract: A single roll crusher for comminuting high purity materials includes a roll with teeth spaced around the circumference of the roll. The roll is rotatably mounted inside a housing. The housing has a top with an entrance port, sides, and bottom with an exit port. The roll, teeth, and at least the inside surfaces of the top, sides, and bottom are fabricated from a material of construction that minimizes contamination of silicon. The material of construction may be tungsten carbide with a cobalt binder. The single roll crusher is used for processing polycrystalline silicon.
    Type: Grant
    Filed: September 20, 2005
    Date of Patent: September 18, 2007
    Assignee: Dow Corning Corporation
    Inventors: Douglas Andrejewski, Thomas Dubay, Terence Lee Horstman, Roger Dale Spencer, Jr.
  • Patent number: 7235128
    Abstract: A process for producing a single-crystal semiconductor and an apparatus therefor. A single-crystal semiconductor of large diameter and large weight can be lifted with the use of existing equipment not having any substantial change thereto while not influencing the oxygen concentration of single-crystal semiconductor and the temperature of melt and while not unduly raising the temperature of seed crystal. In particular, the relationship (L1, L2, L3) between the allowable temperature difference (?T) and the diameter (D) of seed crystal (14) is preset so that the temperature difference between the seed crystal (14) at the time the seed crystal (14) is immersed in the melt and the melt (5) falls within the allowable temperature difference (?T) at which dislocations are not introduced into the seed crystal (14). In accordance with the relationship (L1, L2, L3), the allowable temperature difference (?T) corresponding to the diameter (D) of seed crystal (14) to be immersed in the melt is determined.
    Type: Grant
    Filed: December 6, 2004
    Date of Patent: June 26, 2007
    Assignee: Komatsu Denshi Kinzoku Kabushiki Kaisha
    Inventors: Susumu Maeda, Hiroshi Inagaki, Shigeki Kawashima, Shoei Kurosaka, Kozo Nakamura
  • Patent number: 7235132
    Abstract: In order to pull semiconductor single crystals by the Czochralski method, quartz glass crucibles are used which require support crucibles having high temperature capabilities. Such support crucibles may be made of various materials, in which case graphite materials, carbon fiber-reinforced carbon (CFC), combinations thereof or carbon materials coated with silicon carbide (SiC) are used. The working life of a CFC support crucible can be extended by a partial thickening of the support crucible walls affected by corrosion processes.
    Type: Grant
    Filed: May 12, 2004
    Date of Patent: June 26, 2007
    Assignee: SGL Carbon AG
    Inventor: Dieter Kompalik
  • Patent number: 7214270
    Abstract: The present invention comprises a light modulation optical system having a first element which forms a desired light intensity gradient distribution to an incident light beam and a second element which forms a desired light intensity minimum distribution with an inverse peak shape to the same, and an image formation optical system which is provided between the light modulation optical system and a substrate having a polycrystal semiconductor film or an amorphous semiconductor film, wherein the incident light beam to which the light intensity gradient distribution and the light intensity minimum distribution are formed is applied to the polycrystal semiconductor film or the amorphous semiconductor film through the image formation optical system, thereby crystallizing a non-crystal semiconductor film. The pattern of the first element is opposed to the pattern of the second element.
    Type: Grant
    Filed: September 27, 2004
    Date of Patent: May 8, 2007
    Assignee: Advanced LCD Technologies Development Center Co., Ltd.
    Inventors: Yukio Taniguchi, Masakiyo Matsumura, Noritaka Akita