Abstract: In order to pull semiconductor single crystals by the Czochralski method, quartz glass crucibles are used which require support crucibles having high temperature capabilities. Such support crucibles may be made of various materials, in which case graphite materials, carbon fiber-reinforced carbon (CFC), combinations thereof or carbon materials coated with silicon carbide (SiC) are used. The working life of a CFC support crucible can be extended by a partial thickening of the support crucible walls affected by corrosion processes.

Abstract: A process for producing a single-crystal semiconductor and an apparatus therefor. A single-crystal semiconductor of large diameter and large weight can be lifted with the use of existing equipment not having any substantial change thereto while not influencing the oxygen concentration of single-crystal semiconductor and the temperature of melt and while not unduly raising the temperature of seed crystal. In particular, the relationship (L1, L2, L3) between the allowable temperature difference (?T) and the diameter (D) of seed crystal (14) is preset so that the temperature difference between the seed crystal (14) at the time the seed crystal (14) is immersed in the melt and the melt (5) falls within the allowable temperature difference (?T) at which dislocations are not introduced into the seed crystal (14). In accordance with the relationship (L1, L2, L3), the allowable temperature difference (?T) corresponding to the diameter (D) of seed crystal (14) to be immersed in the melt is determined.

Abstract: The present invention comprises a light modulation optical system having a first element which forms a desired light intensity gradient distribution to an incident light beam and a second element which forms a desired light intensity minimum distribution with an inverse peak shape to the same, and an image formation optical system which is provided between the light modulation optical system and a substrate having a polycrystal semiconductor film or an amorphous semiconductor film, wherein the incident light beam to which the light intensity gradient distribution and the light intensity minimum distribution are formed is applied to the polycrystal semiconductor film or the amorphous semiconductor film through the image formation optical system, thereby crystallizing a non-crystal semiconductor film. The pattern of the first element is opposed to the pattern of the second element.

Abstract: The present invention provides a heater for manufacturing a crystal by the Czochralski method comprising at least terminal portions supplied with current and a heat generating portion by resistance heating, and being arranged so as to surround a crucible containing a raw material melt, wherein the heater has a uniform heat generation distribution to the raw material melt after deformation while in use during crystal manufacture. It is thus possible to prevent hindrance of monocrystallization and unstable crystal quality caused by ununiform temperature in the raw material melt due to deformation of the shape of the heater's heat generating portion while in use during crystal manufacture.

Abstract: An apparatus for growing crystals includes a sealed chamber having a crucible assembly and a seed holder disposed therein. The crucible assembly is adapted to contain a melt therein and the seed holder is selectively positionable within the chamber from a first position relative to the crucible assembly to at least one subsequent position within the crucible assembly. A heater is configured and dimensioned to heat the melt disposed within the crucible assembly and an insulator is included for insulating the heater and the crucible. An actuator rotates at least one of the crucible assembly and the seed holder relative to the other and a support ring suspends the crucible assembly within the sealed chamber. A ceramic thermal shield is disposed atop the support ring and regulates the heat loss from the crucible assembly to an upper portion of the chamber.

Abstract: A crucible for the growth of single crystals by the Czochralski method which can enhance the productivity, yield and quality of crystal and a single crystal growing method, wherein the crucible has an inner bottom surface, the profile of which has at least one raised portion symmetrical about the rotary axis of the crucible wherein the periphery of the raised portion is positioned at a distance of from 0.4 to 1.2 times the radius of crystal to be grown from the rotary axis and the height of the raised portion is generally not smaller than 7% and greater than 100% of the radius of crystal to be grown.

Abstract: The invention presented here relates to a crystal growing equipment. It is equipped in general with a resistance heater for heating a melt (13) as well as with field coils, which generate alternating magnetic field in a crucible, with which flows can be induced in the melt (13). The invention is so designed that the resistance heaters are also devised to function as the field coils, that is, they are built of a hollow cylindrical body (1), in which, by means of a surrounding slit (2) which winds around it, a spiral-shaped single layer current path is formed. This has the advantage that the current needed for the electrical heating in the equipment is also used for the generation of the magnetic field. Thus, neither separate field coils nor a separate current supply is necessary. Further, the resistance heater, which serves as the field coil arranged as a coil array, is high temperature resistant and surrounds the immediate hot core zone of the equipment and thus the region of the melt.

Abstract: This invention provides a high purity silica crucible having low impurity concentration in its inner portion, and its production method. The crucible, in which at least each content of Na and Li being contained in the depth of 1 mm from the inside surface is less than 0.05 ppm, is given by a production method of a high purity silica glass crucible, wherein a purity of the melted silica powder layer is increased by applying a voltage between a mold and an arc electrode to move impurity metals being contained in the melted silica glass layer to the outside, when the silica crucible is produced by arc plasma heating a raw material powder of silica in an inside surface of a hollow rotary mold. The method comprises, keeping an arc electrode potential of within ±500 V during an arc melting, applying a voltage of from ?1000 V to ?20000 V to a mold being insulated to the ground, and applying a high voltage to the un-melted silica powder layer of the outside.

Abstract: Methods and apparatus for preconditioning a lithium niobate or lithium tantalate crystal. At least a portion of a surface of the crystal is covered with a condensed material including one or more active chemicals. The crystal is heated in a non-oxidizing environment above an activating temperature at which the active chemicals contribute to reducing the crystal beneath the covered surface portion. The crystal is cooled from above the activating temperature to below a quenching temperature at which the active chemicals become essentially inactive for reducing the crystal.

Abstract: A crystal forming apparatus and method for using the apparatus, the apparatus including a plate and a film. The plate has a site adapted to hold a screening solution. The film is adjacent to the plate. The film seals the site and is adapted to contain a precipitant solution inside the site with an air gap between the screening solution and the precipitant solution. In a preferred embodiment, the film is transparent. In another preferred embodiment, the plate comprises a second transparent film supported by a lattice structure and the precipitant solution is sandwiched between the two films.

Abstract: A device includes an agitation tank, a liquid circulation means for circulating a liquid along a tank wall of the agitation tank, and at least one auxiliary heat transfer means provided inside the agitation tank, wherein the auxiliary heat transfer means is constantly put in a wetted state.

Abstract: In the method for growing large-volume monocrystals crystal raw material is heated in a melting vessel with heating elements to a temperature above its melting point until a melt is formed. A monocrystal is then formed on the bottom of the melting vessel by lowering the temperature at least to the crystallization point. A solid/liquid phase boundary is formed between the monocrystal and the melt. The monocrystal grows towards the melt surface in a direction that is perpendicular to the phase boundary. A vertical axial temperature gradient is produced and maintained between the bottom of the melting vessel and its upper opening and heat inflow and/or heat outflow through side walls of the melting vessel is prevented, so that the solid/liquid phase boundary has a curvature radius of at least one meter. A crystal-growing device for performing this process is also described.

Abstract: An object of the invention is to provide a quartz glass crucible for pulling up silicon single crystal and a method for producing the same, suitable for improving the productivity of the crucible and the quality of the silicon single crystal, which, by forming a crystalline layer on the inner surface of the quartz glass crucible during pulling up silicon single crystal, prevents degradation from occurring on the inner surface of the crucible and increases the ratio of single crystal while preventing the dislocation from forming on the single crystals.

Abstract: A evaluation process of a vibration level at the surface of silicon melt held in a silica glass crucible is provided by setting in the vacuum furnace, the test piece of the silica glass cut out from a silica glass crucible, melting a little amount of silicon put on said piece of the glass, and measuring a vibration cycle of the silicon melt. Moreover, a silica glass crucible not causing the vibration at the surface of the silicon melt held in the silica glass crucible is also provided, wherein the vibration cycle of a silica glass of a side wall of the crucible is controlled at more than ? seconds.

Abstract: A large semiconductor crystal has a diameter of at least 6 inches and a low dislocation density of not more than 1×104 cm?2. The crystal is preferably a single crystal of GaAs, or one of CdTe, InAs, GaSb, Si or Ge, and may have a positive boron concentration of not more than 1×1016 cm?3 and a carbon concentration of 0.5×1015 cm?3 to 1.5×1015 cm?3 with a uniform concentration throughout the crystal. Such a crystal can form a very thin wafer with a low dislocation density. A special method and apparatus for producing such a crystal is also disclosed.

Abstract: An automated macromolecular crystallization screening system wherein a multiplicity of reagent mixes are produced. A multiplicity of analysis plates is produced utilizing the reagent mixes combined with a sample. The analysis plates are incubated to promote growth of crystals. Images of the crystals are made. The images are analyzed with regard to suitability of the crystals for analysis by x-ray crystallography. A design of reagent mixes is produced based upon the expected suitability of the crystals for analysis by x-ray crystallography. A second multiplicity of mixes of the reagent components is produced utilizing the design and a second multiplicity of reagent mixes is used for a second round of automated macromolecular crystallization screening. In one embodiment the multiplicity of reagent mixes are produced by a random selection of reagent components.

Abstract: A laser annealing apparatus for sequential lateral solidification (SLS) to uniformly crystallize silicon on an entire silicon substrate by minimizing the dislocation of the silicon substrate during laser beam irradiation is disclosed. During the laser annealing, a vacuum chuck holds the silicon substrate on a movable stage. The device includes a laser source, an optical system patterning the shape and energy of a laser beam irradiated from the laser source, a vacuum chuck supporting a silicon substrate, and a movable stage supporting the vacuum chuck as well as transferring the vacuum chuck in a predetermined direction. Accordingly, the apparatus improves the degree of crystallization because it is able to uniformly carry out SLS on an entire surface of the silicon substrate.

Abstract: A system is disclosed for efficient utilization of charge replenishment rods in Czochralski silicon crystal growing processes.

Abstract: A crucible, which has first member and second cylindrical body, is disposed in a lower chamber. A pedestal is disposed inside the first member, and a seed crystal is fixed to the pedestal. A second heat insulator is provided between an inlet conduit and a crucible. A first heat insulator is provided at a halfway portion of the inlet conduit. With these heat insulators, a temperature gradient occurs in the inlet conduit at a portion thereof that is closer to the crucible. A mixture gas is introduced into the crucible. The mixture gas is heated up gradually when passing through the inlet conduit and is introduced into the crucible to form SiC single crystals in high quality.

Abstract: A liquid phase growth method is provided which comprises dipping a seed substrate in a solution in a vessel having a crystal raw material melted therein and growing a crystal on the substrate, wherein a fin is provided on a bottom of the vessel, for regulating a flow of the solution from a central portion outside in a radial direction in the vessel; a flow-regulating plate is provided in the vicinity of an inner sidewall of the vessel, for regulating a flow of the solution from the bottom upwardly; and the vessel is rotated while regulating a flow of the solution by an action of the fin and the flow-regulating plate to bring the solution into contact with the seed substrate. Thus, there is provided a liquid phase growth method and apparatus capable of providing a high growth rate and showing little difference in the growth rate among the substrates or within the same substrate even when a number of substrates are charged in one batch.

Abstract: A method and apparatus for controlled, extended and repeatable growth of high quality silicon carbide boules of a desired polytype is disclosed which utilizes graphite crucibles coated with a thin coating of a metal carbide and in particular carbides selected from the group consisting of tantalum carbide, hafnium carbide, niobium carbide, titanium carbide, zirconium carbide, tungsten carbide and vanadium carbide.

Abstract: A matrix mixing robot includes a plurality of precision pumps (such as precision syringe pumps), a distributor and a processor system. Each pump, under the control of the processor system, draws an associated stock solution from a stock solution source, and pumps the drawn stock solution out through an outlet. The distributor, also under the control of the processor system, directs a stock solution from a particular pump outlet to a selected solution receptacle. A multi-port distribution valve may be associated with each precision pump. Each valve, under control of the processor system, can connect its associated pump to one the pump's inlets or outlets.

Abstract: A raw material feeder apparatus for industrial crystal growth systems includes a hopper disposed within a vacuum chamber and adapted to hold a quantity of raw material therein. A slide is disposed adjacent to an opening of the hopper and configured to receive the raw material from the hopper thereon. The slide is selectively moved between an open feeding position and a closed non-feeding position. The slide and a door cooperatively close the opening of the hopper, or in their open state, control the flow of raw material from the hopper. A vibrator associated with the slide feeds the raw material from the slide into an outlet tube for conveyance of the raw material to the crystal growth system.

Abstract: A one-piece bowl of thermostructural composite material comprising fiber reinforcement densified by a matrix. The bowl is made by supplying deformable fiber in plies that are whole, being free from slots or cutouts, superposing said plies on a former of shape corresponding to the bowl to be made, deforming the plies, and bonding the superposed plies to one another by means of fibers extending transversely relative to the plies, e.g. by needling so as to obtain a bowl preform which is then densified. The bowl can be used as a support for a crucible in an installation for producing monocrystalline silicon.

Abstract: In a single crystal pulling apparatus for providing a Czochralski crystal growth process, the improvement of a shallow melt crucible (20) to eliminate the necessity supplying a large quantity of feed stock materials that had to be preloaded in a deep crucible to grow a large ingot, comprising a gas tight container a crucible with a deepened periphery (25) to prevent snapping of a shallow melt and reduce turbulent melt convection; source supply means for adding source material to the semiconductor melt; a double barrier (23) to minimize heat transfer between the deepened periphery (25) and the shallow melt in the growth compartment; offset holes (24) in the double barrier (23) to increase melt travel length between the deepened periphery (25) and the shallow growth compartment; and the interface heater/heat sink (22) to control the interface shape and crystal growth rate.

Abstract: A heat shield assembly is disclosed for use in a crystal puller for growing a monocrystalline ingot from molten semiconductor source material. The heat shield assembly has a central opening sized and shaped for surrounding the ingot as the ingot is pulled from the molten source material. In one aspect, the heat shield assembly includes a multi-sectioned outer shield and a multi-sectioned inner shield. The sections of at least one of the inner and outer shields may be releasably connected to one another so that, in the event a section is damaged, the sections may be separated to allow replacement with an undamaged section. In another aspect the heat shield assembly includes an upper section and a lower section extending generally downward from the upper section toward the molten material. The lower section has a height equal to at least about 33% of a height of the heat shield assembly.

Abstract: Provided are a quartz glass crucible for pulling up a silicon single crystal, with which not only a defectless silicon single crystal can be pulled but a single crystallization ratio can greatly be improved and a production method therefor. The quartz glass crucible comprises a crucible body constituted of a semi-transparent quartz glass layer and a transparent quartz glass layer formed on the inner wall surface of the crucible bass body and no expanded bubbles equal to ro more than 0.5 mm in diameter are present in a layer 1 mm in depth from an inner surface of the quartz glass crucible after the silicon single crystal is pulled up using the quartz glass crucible.

Abstract: A large semiconductor crystal is produced by charging a raw material into a crucible in a reactor tube, sealing the reactor tube with a flange on an open end of the tube, pressurizing the interior of the tube to an elevated pressure with an inert gas, heating the tube with an externally arranged heater to melt the raw material to form a raw material melt in the crucible, and solidifying the raw material melt to grow the semiconductor crystal. A second raw material such as a group V element can be introduced as a vapor from a reservoir into the melt in the crucible to form a compound semiconductor material. The flange is sealed to the tube by an elastic seal member, of which the temperature is maintained below 400° C. throughout the process, to protect its elastic sealing properties.

Abstract: To provide a device for refining a solid material and a process for refining it, whereby from the supply of the material to the operation for recovery of crystals can be carried out batch-wisely or continuously, and inclusion of foreign matters such as particles can be efficiently prevented. A device for refining an evaporable or sublimable solid material, which comprises a housing, and at least one rotatable roller for evaporation and at least one rotatable roller for precipitation, installed in the housing.

Abstract: A crucible 1 made of a C/C composite material for use in single crystal pulling, the crucible 1 having a lateral cylindrical portion 11 and a bottom portion 12 integrally formed as multiple layers wound by a filament winding method, in which the first layer 2 as the innermost crucible layer, among the multiple layers, is wound such that carbon fibers form tracks passing the polar point O at the bottom 12, the second layer 3 wound on the outer surface of the first layer 2 is wound along tracks to form a first outer circular bottom 8 that extends outwardly from about a middle part of a raised portion 6 where the carbon fibers of the first layer 2 are localized to the polar point O, and the third layer 4 and the succeeding layers wound on the outer surface of the second layer 3 are wound respectively along tracks to form outer circular bottoms that extend stepwise outwardly from about the middle parts of the outer surfaces of layers situated inside the respective layers, and the top for the raised portion of the

Abstract: A crucible used in the growth of polycrystal silicon by a cast method comprises a crucible body for, when solid material silicon is melted, containing the melted material silicon, and a material holder provided on the crucible body, for holding further material silicon on the material silicon loaded into the crucible body.

Abstract: The invention describes a CVD reactor on solid substrates and a related method of deposition of epitaxial layers on the wafers. In the reactor of the invention, the wafer carrier is transported between a loading position and a deposition position. In the deposition position, the wafer carrier is detachably mounted on an upper end of a rotatable spindle without an intermediate susceptor. The reactor of the invention may process a single wafer or a plurality of wafers at the same time. The invention also described several embodiments and variants of the invention. One of the variants of the invention provides a decrease in a heat drain from the wafer-supporting assembly through the spindle and a novel heating arrangement therefore. The advantages of the invention include lower reactor cycle, the lower cost and longer lifetime of the component parts, and better temperature control, among others.

Abstract: A seed crystal holder holds a SiC seed crystal while a SiC bulk single crystal is grown on the front surface of the seed crystal. The holder includes a back surface body with a bearing surface for bearing against a back surface of the SiC seed crystal. The holder includes a lateral mount for receiving the back surface body and the SiC seed crystal. The lateral mount has a projection located on an end facing the SiC seed crystal. The SiC seed crystal rests on the projection.

Abstract: A method is provided for determining crystallization conditions for a material, the method comprising: taking a plurality of different crystallization samples in an enclosed microvolume, the plurality of crystallization samples comprising a material to be crystallized and crystallization conditions which vary among the plurality of crystallization samples; allowing crystals of the material to form in plurality of crystallization samples; and identifying which of the plurality of crystallization samples form crystals.

Abstract: The invention relates to an apparatus for growing thin films onto the surface of a substrate by exposing the substrate to alternately repeated surface reactions of vapor-phase reactants. The apparatus comprises at least one process chamber having a tightly sealable structure, at least one reaction chamber having a structure suitable for adapting into the interior of said process chamber and comprising a reaction space of which at least a portion is movable, infeed means connectable to said reaction space for feeding said reactants into said reaction space, and outfeed means connectable to said reaction space for discharging excess reactants and reaction gases from said reaction space, and at least one substrate adapted into said reaction space.

Abstract: A method of growing epitaxial layers on a wafer is provided and includes providing a wafer carrier having a surface for retaining the wafer; placing the wafer on the wafer-retaining surface of the wafer carrier while the wafer carrier is in a loading position separated from a spindle; transporting the wafer carrier toward the spindle; detachably mounting the wafer carrier on the upper end of the spindle for rotation therewith; and rotating the spindle and the wafer carrier while introducing one or more reactants into the reaction chamber. The invention also described several embodiments and variants of the method of the invention.

Abstract: A modified susceptor for use in an epitaxial deposition apparatus and process is disclosed. The modified susceptor has an inner annular ledge capable of supporting a semiconductor wafer and has a plurality of holes in the surface to allow cleaning gas utilized during an epitaxial deposition process to pass through the susceptor and contact substantially the entire back surface of the semiconductor wafer and remove a native oxide layer. Also, the plurality of holes on the susceptor allows dopant atoms out-diffused from the back surface during the epitaxial deposition process to be carried away from the front surface in an inert gas stream and into the exhaust such that autodoping of the front surface is minimized.

Abstract: A crystal-pulling apparatus for pulling and growing a monocrystalline silicon ingot comprises a quartz crucible placed in a chamber and containing a silicon melt from which a monocrystalline silicon ingot will be pulled, a graphite crucible container to support the quartz crucible by surrounding the outer circumferential surface and external base surface of crucible, and a heater provided around the outer circumferential surface of the crucible container to heat the silicon melt. This apparatus further comprises a spacer having a top surface whose area is smaller than the base area of the quartz crucible and having a melting point higher than that of silicon, is inserted between the base of the quartz crucible and the base of the crucible container while the monocrystalline silicon ingot is pulled.

Abstract: A rotational directional solidification crystal growth system includes a vertical furnace, a crucible, and a rotate support device. The vertical furnace contains a high-temperature portion and a low-temperature portion. The crucible has a seed well and a growth region. The seed well and the growth region contain a seed crystal and raw material, respectively. The crucible moves from the high-temperature portion of the furnace to the low-temperature portion of the furnace or the thermal profile moves related to a stationary crucible to proceed the crystal growth. The rotation support device supports and rotates the crucible, and the tangent velocity of the rotated crucible is no less than about 5&pgr;/3 cm/s.

Abstract: A silica glass crucible is disclosed comprising a barium-doped inner wall layer. The crucible is made by introducing into a rotating crucible mold bulk silica grain to form a bulky wall. After heating the interior of the mold to fuse the bulk silica grains, an inner silica grain, doped with barium, is introduced. The heat at least partially melts the inner silica grain, allowing it to fuse to the wall to form an inner layer. The inner layer of the crucible crystallizes when used in a CZ process, extending the operating life of the crucible.

Abstract: A surface modified quartz glass crucible and a process for modifying the crucible includes a layer of a metal oxide on the whole or a part of the inside and/or outside of the crucible, and baking it. At least an inside surface of the crucible is coated with a said metal oxide of magnesium, calcium, strontium or barium. The coated layer of the crucible does not abrade easily and provides a high dislocation free ratio of silicon single crystals pulled by using the crucible.

Abstract: A protein crystal growth assembly including a crystal growth cell and further including a cell body having a top side and a bottom side and a first aperture defined therethrough, the cell body having opposing first and second sides and a second aperture defined therethrough. A cell barrel is disposed within the cell body, the cell barrel defining a cavity alignable with the first aperture of the cell body, the cell barrel being rotatable within the second aperture. A reservoir is coupled to the bottom side of the cell body and a cap having a top side is disposed on the top side of the cell body.

Abstract: An apparatus for producing large diameter monocrystalline Group III-V, II-VI compounds that have reduced crystal defect density, improved crystal growth yield, and improved bulk material characteristics. The apparatus comprises a crucible or boat, an ampoule that contains the crucible or boat, a heating unit disposed about the ampoule, and a liner disposed between the heating unit and the ampoule. The liner is preferably composed of a quartz material. When the liner and the ampoule are made of the same material, such as quartz, the thermal expansion coefficients of the liner and ampoule are the same, which significantly increases the lifetime of the liner and the single-crystal yield.

Abstract: A crystal forming apparatus and method for using the apparatus, the apparatus including a plate and a film. The plate has a site adapted to hold a screening solution. The film is adjacent to the plate. The film seals the site and is adapted to contain a precipitant solution inside the site with an air gap between the screening solution and the precipitant solution. In a preferred embodiment, the film is transparent. In another preferred embodiment, the plate comprises a second transparent film supported by a lattice structure and the precipitant solution is sandwiched between the two films.

Abstract: A process for removing photoresist from semiconductor wafers is disclosed wherein at least one semiconductor wafer having at least one layer of photoresist is positioned in a process tank; ozone gas is provided to said process tank; and said semiconductor wafer is spayed with a mixture of ozone and deionized water via at least one nozzle. The temperature during the process is maintained at or above ambient temperature. The ozone gas supplied to the tank is preferably under pressure within said process tank and the nozzles preferably spray the mixture of deionized water and ozone at a nozzle pressure between 5 and 10 atmospheres. In another embodiment, the invention is an apparatus for carrying out the process.

Abstract: In order to prevent a region of supercooling from increasing and to effect uniform crystal growth, the generation of latent heat is detected from changes in temperature of a crucible or a heater or from changes in heat flow rate and also the position of solid-liquid interface is mathematically found, to control the crucible-descending rate or temperature distribution so that the crystal growth rate can be kept at a predetermined value.

Abstract: Chemical vapor deposition epitaxial reactor comprising two reaction chambers, each provided with a susceptor, enclosed in a bell jar, to be induction heated by an induction coil supplied by a medium frequency AC generator, and generator means for providing a medium frequency power supply to the two induction coils of both the reaction chambers, wherein the means for power supplying the two induction coils are alternatively actuated, so that when one of the reaction chambers is heated the other one is purged, loaded and/or unloaded, providing however a time overlap of 1 to 10 minutes between the heating times of the two processes. A computerized controller provides to control the medium frequency generators in accordance with a dedicated software for providing an actuating method to the specific reactor.

Abstract: A silica glass crucible is disclosed comprising a barium-doped inner wall layer. The crucible is made by introducing into a rotating crucible mold bulk silica grain to form a bulky wall. After heating the interior of the mold to fuse the bulk silica grains, an inner silica grain, doped with barium, is introduced. The heat at least partially melts the inner silica grain, allowing it to fuse to the wall to form an inner layer. The inner layer of the crucible crystallizes when used in a CZ process, extending the operating life of the crucible.

Abstract: An improved apparatus and method for substrate layer deposition in which substrate layers are grown by carrier gas delivery of sequential pulses of reactants to the substrate surface. At least one of the reactants comprises excited species, e.g., radicals. In a specific embodiment, the apparatus of this invention provides sequential repeated pulses of reactants in a flow of carrier gas for reaction at a substrate surface. The reactant pulses are delivered with sufficient intervening delay times to minimize undesirable reaction between reactants in adjacent pulses in the gas phase or undesired uncontrolled reactions on the substrate surface.

Abstract: An apparatus and method of providing a large semiconductor crystal at a low cost are provided. The apparatus of producing a semiconductor crystal includes a reactor tube having an open end at least one end side, formed of any one material selected from the group consisting of silicon carbide, silicon nitride, aluminum nitride, and aluminum oxide, or of a composite material with any one material selected from the group consisting of silicon carbide, silicon nitride, aluminum nitride, boron nitride, aluminum oxide, magnesium oxide, mullite, and carbon as a base, and having an oxidation-proof or airtight film formed on the surface of the base, a kanthal heater arranged around the reactor tube in the atmosphere, a flange attached at the open end to seal the reactor tube, and a crucible mounted in the reactor tube to store material of a semiconductor crystal. The material stored in the crucible is heated and melted to form material melt. The material melt is solidified to grow a semiconductor crystal.