Abstract: A control method for use with a Czochralski crystal puller. The method includes pulling the growing crystal from the melt at a first target pull rate to grow a taper portion of the crystal and measuring the crystal diameter of the taper. The method also includes estimating a slope of the diameter as a function of a change in crystal diameter relative to time and the first target pull rate. The method further includes predicting a crystal diameter Di at which to initiate body growth from the taper as a function of the estimated slope. By increasing the pull rate to a second target pull rate when the measured crystal diameter reaches the predicted crystal diameter Di, the method controls growth of the crystal for transitioning from taper growth to body growth. The method also determines the second target pull rate as a function of the estimated slope when using a predefined diameter Di at which to initiate growth of the crystal body.

Abstract: A process for preparing a quartz crucible having a tungsten doped layer on the inside surface, outside surface, or both the inside surface and the outside surface is disclosed. One or more surfaces of the crucible is exposed to a vaporous tungsten source to anneal the tungsten into the crucible surface and create a tungsten doped layer which behaves similarly to a bubble free layer upon use in a crystal pulling process.

Abstract: A method and apparatus for producing silicon single crystals with reduced contamination is disclosed. In one embodiment the structural components constructed of graphite and located in the hot zone of the crystal pulling apparatus have two protective layers. The first protective layer is applied directly to the graphite component. The second protective layer is a silicon layer and is applied on top of the first protective layer and covers the first layer. In a second embodiment, the structural components constructed of graphite and located in the hot zone of the crystal pulling apparatus have a single protective layer. The single protective layer is applied directly to the graphite and consists of a mixture of silicon carbide and silicon.

Abstract: A dendritic web formation process and apparatus for diffusing dopant impurities into a growing dendritic crystal web to produce photovoltaic cells. A solid dopant diffusion source is arranged in a holder mounted in a vertical thermal element either within the melt furnace or outside the furnace adjacent the furnace exit port. The solid diffusion source is heated by thermal conduction from the vertical thermal element and source holder using the furnace heat as a source. Auxiliary heater coils are optionally provided around the vertical thermal element to control the temperature of the solid diffusion source. The source and holder can also be mounted outside the furnace adjacent the exit port and heated using a secondary rapid temperature external heater. The growing dendritic crystal web is exposed to the dopant impurities as part of the web growing process, eliminating the need for a separate diffusion gaseous station and processing.

Abstract: A process for producing a silicon single crystal by the Czochralski method, utilizes a heater which is intended for heating a silicon-filled crucible and is arranged below the crucible. The process has energy delivered to the melt at least some of the time inductively using a coiled heater arranged under the crucible. The heater is in the form of a wound coil.

Abstract: A method and system for controlling the thickness of a pair of dendrites in a dendritic silicon web growth process to improve dendritic silicon web production. An image of each dendrite in a web emerging from a silicon melt in a furnace is produced by a pair of cameras focused on the dendrite pair. The dendrite images are digitized, the average thickness of the dendrites is calculated, and compared to set point parameters. The average difference between the dendrite thicknesses and the set point parameters is used to control the overall furnace temperature, while the differences between the thickness of each pair are used to control the lateral temperature distribution in the furnace in order to maintain the dendrite thickness within predetermined limits.

Abstract: An apparatus for fabricating single-crystal silicon easily controlling a temperature gradient based on the Czochralski (CZ) method, and more particularly preventing as-grown defects created in order to obtain high-quality single-crystal silicon.The above-mentioned apparatus includes a first thermal shield member surrounding the pulling single-crystal silicon and a second thermal shield member inside the first thermal shield member, surrounding the pulling single-crystal silicon. The second thermal shield member is fixed on the first thermal shield member by a support located on the external surface of the second thermal shield member and connected to the first thermal shield member. The surroundings of a solid-liquid interface are extremely cooled by using the first thermal shield member, thereby a stable shape of the single-crystal silicon is formed. The temperature gradient of the temperature region of 1000.degree. C..about.1200.degree. C.

Abstract: the present invention provides an improved method and apparatus for doping silicon and other crystals made by the Czochralski process wherein the surface of the melt is partially enclosed or covered in order to capture the dopant vapors and improve the efficiency with which they are dissolved in the melt. In accordance with the invention the dopant is suspended in a vapor retention vessel such as a quartz bell jar which is suspended above the melt so that the heat from the melt causes the dopant to vaporize. In accordance with the invention, an annular baffle is provided around the mouth of the vessel or the rim of the crucible containing the melt such that the amount of uncovered open area on the surface of the melt is reduced and the dopant vapor is retained in contact with the surface of the melt such that it dissolves more efficiently in the melt.

Abstract: A continuous oxidation process and apparatus for using the same are disclosed. During growth of a semiconductor crystal an oxygen-containing gas is continuously injected into the crystal pulling apparatus in an exhaust tunnel downstream from the hot zone to continuously oxidize hypostoichiometric silicon dioxide, silicon vapor, and silicon monoxide produced in the hot zone during the crystal growth so as to minimize or eliminate the possibility of rapid over-pressurization of the apparatus upon exposure to the atmosphere.

Abstract: A method and an apparatus for pulling a single crystal are disclosed. A neck portion, a corrugated portion, and a single crystal are formed below a seed crystal held by a seed chuck. When the corrugated portion is raised to a predetermined position (where lifting jig can hold the corrugated portion) by the seed chuck, the rising speed Va of the seed chuck is reduced, and a slider that supports a seed chuck lifting mechanism is raised at a speed Vb in order to maintain a constant pulling speed of the single crystal. Eventually, the pulling by the seed chuck is switched to the pulling by the slider. Subsequently, the lifting jig provided on the slider is raised slightly by a moving mechanism so that the crystal holding portions of the lifting jig are brought into contact with the corrugated portion and 1-50% of the weight of the crystal is shifted to the lifting jig. This enables safe and accurate growth of a heavy single crystal in accordance with, for example, the CZ method.

Abstract: A process is disclosed for continuously producing a single crystal by drawing downwardly a melt of a single crystal raw material, wherein a single crystal body grown from the melt is continuously pulled downwardly, and a plurality of single crystal products are continuously formed by intermittently cutting the single crystal body being downwardly moved.

Abstract: A method of making silicon single crystal wafers free of grown-in defects is provided. These wafers are formed from silicon single crystal manufactured by the Czochralski method. Careful control of the pulling rate, V (mm/min), and the temperature gradient G (.degree. C./mm) permits crystals to be formed that are free from OSF rings, and other types of defects.

Abstract: A process for producing silicon wafers with low defect density is one wherein a) a silicon single crystal having an oxygen doping concentration of at least 4*10.sup.17 /cm.sup.3 is produced by molten material being solidified to form a single crystal and is then cooled, and the holding time of the single crystal during cooling in the temperature range of from 850.degree. C. to 1100.degree. C. is less than 80 minutes; b) the single crystal is processed to form silicon wafers; and c) the silicon wafers are annealed at a temperature of at least 1000.degree. C. for at least one hour. Also, it is possible to prepare a silicon single crystal based upon having an oxygen doping concentration of at least 4*10.sup.17 /cm.sup.3 and a nitrogen doping concentration of at least 1*10.sup.14 /cm.sup.3 for (a) above.

Abstract: A method for fabricating a semiconductor single crystal by the MCZ method by which it is possible to pull large diameter and heavy semiconductor single crystals without breaking the contraction portion, is provided.In the contracting step, change the shape of the crystal growth interface by making the range of the temperature fluctuation caused by convection in the vicinity of the melt surface more than 5.degree. C. so as to eliminate the dislocation in the contracted portion. When a transverse magnetic field is applied by magnets 6,6, the magnetic field intensity is set below 2000 Gauss to properly change the shape of the crystal growth interface to form the contracted portion 10. Thus,even though the diameter of the contracted portion 10 is larger than normal, free dislocation is achieved. After the dislocation is eliminated, the magnetic field intensity is recovered and shoulder 11 is formed.

Abstract: The present invention relates to single crystal silicon, in ingot or wafer form, which contains an axially symmetric region in which vacancies are the predominant intrinsic point defect and which is substantially free of agglomerated vacancy intrinsic point defects, wherein the first axially symmetric region comprises the central axis or has a width of at least about 15 mm, and a process for the preparation thereof.

Abstract: A quartz crucible for use in the preparation of silicon crystals substantially free from crystal void defects and a process for its preparation are disclosed. The crucible is prepared by introducing quartz powder into a rotating mould in an atmosphere containing less than about 0.5% insoluble gases such as argon. The quartz powder accumulates along the inner surface of the mould, and is subsequently heated to fuse the quartz powder to produce the crucible. The gases contained in the bubbles in the resulting crucible are comprised of less than about 0.5% insoluble gases.

Abstract: A process and apparatus for regulating the concentration and distribution of oxygen in a single crystal silicon rod pulled from a silicon melt, optionally doped with antimony or arsenic, in accordance with the Czochralski method wherein an atmosphere is maintained over the melt. In batch embodiments of the process, the gas pressure of the atmosphere over the melt is progressively increased to a value in excess of 100 torr as the fraction of silicon melt solidified increases. In continuous embodiments of the process, the gas pressure of the atmosphere over the melt is maintained at or near a constant value in excess of 100 torr. The process and apparatus are further characterized in that a controlled flow of inert gas is used to remove vapors and particulate away from the surface of the rod and melt, resulting in the production of a single crystal silicon rod having zero dislocations.

Abstract: A low-cost and high productivity charging material is provided for use in the recharge or additional charge fabrication of single-crystal semiconductor by means of the CZ method. Common polysilicon rods utilized in recharge or additional charge fabrication have their end portions formed into ring grooves. A joint element is made of silicon. When the end portions of the rods contact, the joint element engages the grooves to connect the rods together along their longitudinal direction. The rods can have arbitrary length, whereas the total weight, including the joint element, must be adjusted by the length to be greater than those of the melted polysilicon and the suspending portions.

Abstract: A non-Dash neck method of preparing a single crystal silicon rod, pulled in accordance with the Czochralski method. The process is characterized in that a large diameter, dislocation-free seed crystal is allowed to thermally equilibrate prior to initiation of silicon rod growth, in order to avoid the formation of dislocations resulting from thermal shock to the crystal. The process is further characterized in that a resistance heater is used to melt the lower tip of the seed crystal to form a molten cap before it is brought into contact with the melt. The process yields a single crystal silicon rod having a short, large diameter neck which is dislocation-free, and which is capable of supporting a silicon rod which weighs at least about 100 kilograms during growth and subsequent handling.

Abstract: A method and system for determining a diameter of a silicon single crystal being pulled from a silicon melt contained in a heated crucible. The melt has a surface with a meniscus visible as a bright area adjacent the pulled crystal. A camera generates an image of the interior of the crucible including a portion of the bright area adjacent the crystal. Image processing circuitry defines a central window region of the image having an elliptical shape at a position corresponding to an approximate center of the crystal and processes the image as a function of its pixel values to detect edges within the central window region. The image processing circuitry further groups the detected edges to define an object in the image corresponding to the crystal, determines a dimension of the defined object and determines an approximate diameter of the crystal as a function of the determined dimension of the defined object.

Abstract: The object of the present invention affords a method of feeding dopant and a dopant composition used therein for easily preparing single crystals having a desired doping concentration during semiconductor substrate fabrication.In accordance with the present invention, a water solution containing oxides of the dopant is first added to the liquid containing colloidal silica. The colloidal silica can adsorb the oxides of the dopant to form a dopant composition. Around rod-shaped polysilicon, that is polysilicon rod, the dopant composition is discontinuously coated on the periphery of the polysilicon rods spaced at constant intervals and then dried. When the polysilicon rods are melted in an apparatus for manufacturing single crystals by a heater, dopant is protected by the glassed silica without evaporation. Accordingly, the dopant can be provided at a predetermined concentration to sustain the grown single crystals having a doping concentration as required.

Abstract: A process for preparing a molten silicon melt from polycrystalline silicon for use in producing single crystal silicon by the Czochralski method is disclosed. Granular and chunk polycrystalline silicon are loaded into a Czochralski crucible as a mixed charge. Preferably, the granular polycrystalline silicon is loaded onto the bottom, mounded toward the centerline of the crucible, and not contacting the upper portion of the wall of the crucible. The chunk polycrystalline silicon is loaded onto the granular polycrystalline silicon. The granular polycrystalline silicon and chunk polycrystalline silicon are melted to form a silicon melt, preferably by heating the polycrystalline silicon from the bottom up such that a substantial portion of the granular polycrystalline silicon is melted before a substantial portion of the chunk polycrystalline silicon is melted.

Abstract: In a heat history initializing step, a heat treatment in performed in an atmosphere including at least one of hydrogen, helium, and argon while the temperature is increased in a range of 700.degree. C. to 1,000.degree. C. at a rate of 15.degree.-1,000.degree. C./min. In a controlled nuclei growing step, a heat treatment is performed in the above atmosphere while the temperature is kept constant in a range of 850.degree. C. to 980.degree. C. for 0.5-60 minutes.

Abstract: A silicon single-crystal ingot which is nearly uniform in quality over the entire length of the column portion can be obtained to produce high-quality single-crystal silicon with high product yield and has the bottom column portion having the property close to the properties of the top column portion and the middle column portion. The bottom portion does not vary in shape among product lots and can be reproduced in the same shape. The diameter D2 of the bottom portion 2 is controlled in such a manner that the outer surface of the bottom portion 2a on the column portion side has an inclination angle .theta. of 10 to 25 degrees with respect to the outer surface of the column portion 1 and extends to the outer surface of the column portion.

Abstract: A silicon single crystal having low defects, such as flow pattern defects and laser scattering tomography defects, and high dielectric breakdown strength in oxides and a method of producing the same using the Czochralski technique comprising steps of adjusting a first passage time of a growing crystal for a first temperature range of the melting point to 1,200.degree. C. so as to be 190 min. or shorter and adjusting a second passage time thereof for a second temperature range of 1,150.degree. C. to 1,080.degree. C. so as to be 60 min. or longer during crystal growth.

Abstract: A double-wall crucible is disclosed which is constructed by coaxially disposing a cylindrical partition wall in an outer crucible for holding a molten mass of silicon as a raw material and operated by heating the outer crucible and meanwhile supplying the raw material silicon to the gap between the outer crucible and the cylindrical partition wall and introducing the consequently produced molten mass of silicon to the interior of the cylindrical partition wall through a passage below the level of the molten mass of silicon interconnecting the outer crucible and the inner side of the cylindrical partition wall and meanwhile pulling a single crystal bar from the molten mass of silicon in the cylindrical partition wall. In this double-wall crucible, at least the cylindrical partition wall is formed of quartz glass having a hydroxyl group (OH group) content of not more than 30 ppm.

Abstract: An epitaxial wafer capable of removing impurities and oxide layers thereon having a high dielectric strength is disclosed. A substrate wafer 1 in which laser-scattering centers have a density of higher than 5.times.10.sup.6 /cm.sup.3 is provided. An epitaxial layer 3 is formed by epitaxial growth on a completely clean surface of the substrate. The surface of the epitaxial layer consists of a non-defect layer which is provided for device active regions. Moreover, a high density of laser-scattering centers are distributed near the interface of the epitaxial layer and the substrate wafer and the interior of the substrate, thus providing for a wafer capable of removing impurities.

Abstract: The present invention is to manufacture a low hydrogen-concentration silicon crystal having less micro defects caused from oxygen precipitation generated during an annealing process. Particularly, a silicon crystal including hydrogen concentration lower than 0.55.times.10.sup.11 cm.sup.-3, where the hydrogen concentration dependency is small and the micro defect density is less, may be used for a substrate of semiconductor devices. The low hydrogen-concentration silicon substrate is manufactured by measuring the hydrogen concentrations in a silicon crystal and in a hydrogen-doped silicon crystal having a known hydrogen concentration, where both the silicon crystals have been annealed at an equal condition so as to generate thermal donors therein, and by comparing thus measured hydrogen concentrations.

Abstract: Epitaxial and polycrystalline layers of silicon and silicon-germanium alloys are selectively grown on a semiconductor substrate or wafer by forming over the wafer a thin film masking layer of an oxide of an element selected from scandium, yttrium, lanthanum, cerium, praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, and lutetium; and then growing the epitaxial layer over the wafer at temperatures below 650.degree. C. The epitaxial and polycrystalline layers do not grow on the masking layer. The invention overcomes the problem of forming epitaxial layers at temperatures above 650.degree. C. by providing a lower temperature process.

Abstract: A silicon single crystal prepared by the Czochralski method including a neck having an upper portion, an intermediate portion, and a lower portion. The upper portion contains dislocations. The intermediate portion is between the upper and lower portions. A majority of the intermediate and lower portions has a diameter greater than 10 millimeters, and the lower portion is free of dislocations. The crystal also includes an outwardly flaring segment adjacent the lower portion of the neck, and a body adjacent the outwardly flaring segment.

Abstract: A method for fabricating semiconductor substrates with resistivity below 0.02 ohm-cm is provided. This low resistivity is achieved by doping a silicon melt with a phosphorus concentrations above 1.times.10.sup.18. The silicon melt is also doped with a germanium concentration that is 1.5 to 2.5 times that of the phosphorus concentration and a stress and dislocation free crystalline boule is grown. Phosphorus in high concentrations will induce stress in the crystal lattice due to the difference in the atomic radius of silicon atoms versus phosphorus atoms. Germanium compensates for the atomic radius mismatch and also retards the diffusion of the phosphorus as the diffusion coefficient remains relatively constant with a doping of 1.times.10.sup.18 to 1.times.10.sup.21 atoms per cm.sup.3. This will retard phosphorus from diffusing into an overlying epitaxial layer and retard other layers formed on the substrate from being auto-doped.

Abstract: The evaluation of the oxide film dielectric breakdown voltage of a silicon semiconductor single crystal is caried out by cutting a wafer out of the single crystal rod, etching the surface of the wafer with the mixed solution of hydrofluoric acid and nitric acid thereby relieving the wafer of strain, then etching the surface of the wafer with the mixed solution of K.sub.2 Cr.sub.2 O.sub.7, hydrofluoric acid, and water thereby inducing occurrence of pits and scale-like patterns on the surface, determining the density of the scale-like patterns, and computing the oxide film dielectric breakdown voltage by making use of the correlating between the density of scale-like patterns and the oxide film dielectric breakdown voltage. This fact established the method of this invention to be capable of effecting an evaluation equivalent to the evaluation of the oxide film dielectric breakdown voltage of a PW wafer prepared from the single crystal rod.

Abstract: The present invention is to manufacture a low hydrogen-concentration silicon crystal having less micro defects caused from oxygen precipitation generated during an annealing process. Particularly, a silicon crystal including hydrogen concentration lower than 0.55.times.10.sup.11 cm.sup.-3, where the hydrogen concentration dependency is small and the micro defect density is less, may be used for a substrate of semiconductor devices. The low hydrogen-concentration silicon substrate is manufactured by measuring the hydrogen concentrations in a silicon crystal and in a hydrogen-doped silicon crystal having a known hydrogen concentration, where both the silicon crystals have been annealed at an equal condition so as to generated thermal donors therein, and by comparing thus measured hydrogen concentrations.

Abstract: The present invention provides a method of growing silicon single crystals by the Czochralski method, wherein the strength of a neck may be increased so as to delete the risk of severance thereof in a simple and easy way without the use of mechanically complex devices and thereby growing of a single crystal of a larger diameter and heavy weight is made practically possible.The method comprises the steps of: a single crystal being so grown from a seed crystal that the diameter of said single crystal gets gradually narrower until the length of a seed taper reaches 2.5 to 15 times the sectional size of the seed crystal; the diameter of a long near-cylindrical neck following the seed taper being so regulated that said diameter may be 0.09 to 0.9 times the sectional size of the seed crystal and 2.

Abstract: The process includes processing a molten phase of semiconductor material ering a solid phase of the material and having a free surface opposite this solid phase, into which, during the crystallization procedure, energy is radiated and material is fed in in granular form, which material floats and is melted. As a result, at the opposite solid/liquid interface, material grows on the solid phase which is drawn downwards in accordance with the growth rate. The process allows mono- or polycrystalline rods or blocks to be obtained. The main advantages of the process are that it can be carried out without melting vessels, it is possible to use granular material, and the energy balance is favorable because of the small amounts of melt.

Abstract: A method of and an apparatus for predicting density and distribution of crystal defects those would appear in a semiconductor wafer in the course during heat treatment thereof on the basis of respective densities and distributions of interstitial atoms and atom vacancies frozen, during crystal growth, into a semiconductor single crystal which is used as a raw material of said semiconductor wafer, in a section of said semiconductor single crystal corresponding to said semiconductor wafer, comprising: deriving said respective densities and distributions of interstitial atoms and atom vacancies from a first diffusion equation representing a change with time in concentration of interstitial atoms in the semiconductor single crystal in the course of growth from a melt as a function of a position in the crystal and a second diffusion equation representing a change with time in concentration of atom vacancies in said crystal as a function of a position in the crystal.

Abstract: A process and apparatus for growing a crysrtal by the Czochralski method, in which a melt is disposed in a crucible, partitioned into an outer annular portion and an inner cylindrical portion by an annular separation element which is open at its bottom, the open bottom being spaced from the bottom of the crucible. The separation element is rotated on its vertical axis and a crystal is pulled from the melt in the inner cylindrical portion by raising a crystal holder, which is also rotated, in the vertical direction. The melt required for growing the crystal flows from the outer annular portion to the inner cylindrical portion over the entire cross-section of the inner cylindrical portion at the bottom of the annular separation element.

Abstract: A method of forming a semiconductor boule comprises the steps of providing a chamber having a crucible therein; introducing a first material and a second material into the crucible, the second material overlying the first material; heating the crucible to melt the first and second materials for substantially continuously covering the first material with the second material during the melting of the first and second materials; cooling the melt to grow a directly synthesized boule; and separating the grown boule from the crucible. In another embodiment, the method comprises steps of providing a chamber having a crucible therein; charging a first and a second material for forming the boule and a liquid encapsulant into the crucible, the volume of the intergranular space of charged first material being smaller than the volume of the molten second material; heating the crucible to melt the first and second materials; cooling the molten materials to grow the boule; and separating the grown boule from the crucible.

Abstract: A dopant (76), such as antimony, is cast around a seed crystal (10) to form a seed-dopant assembly (14) that facilitates doping of a molten semiconductor (36), such as silicon, in a crystal-growing furnace (34). To grow a doped ingot, the seed-dopant assembly is held in a relatively cool part of the furnace while the semiconductor is melted. When the semiconductor melt is ready for doping, the seed-dopant assembly is lowered to a position just above the melt. Heat transferred to the seed dopant assembly from the melt causes the dopant to drop off the seed into the molten semiconductor without splashing and without immersing the seed.

Abstract: A single crystal material is filled in a crucible, and the whole of the single crystal material is melted to contain doping impurities. A solid layer coagulated upward from the bottom of the crucible is rendered to coexist with a melted layer over the solid layer. The solid layer is melted from the upper side thereof while pulling the single crystal from the melted layer. The ratio by weight between the solid layer and the single crystal material at the start of pulling is adjusted, together with the ratio by weight between the grown single crystal and the melting solid layer. The single crystal is thus grown while changing the volume of the melted layer.

Abstract: A single silicon crystal wafer produced by the Czochvalski method and measuring not less than 100 mm in diameter, a single silicon crystal having low OSF density induced by oxidation, wherein regarding the local resistivity measured by the spread resistance method on the surface of said wafer subjected in advance to a heat treatment for extinction of oxygen donor, the proportion of the number of points of measurement registering errors exceeding .+-.1.0% of the mean value is not more than 35% of the total number of points of measurement, and regarding the distribution of oxygen concentration in solid solution in the wafer surface, the difference between the maximum and the minimum is not more than 2.0% of the maximum, and a method for production thereof.

Abstract: A process for producing a silicon single crystal is disclosed which comprises the steps of providing a silicon melt in a crucible, feeding grains of silicon polycrystal to the silicon melt and pulling up a silicon single crystal from the silicon melt. The concentration of residual hydrogen in the grains of silicon polycrystal is more than 10 ppmwt and less than 100 ppmwt. The process prevents the silicon single crystal from being polycrystalline.

Abstract: A single crystal pulling apparatus of the Czochralski method type wherein the cylindrical heater is supported not only by the two existing electrodes which are vertically shiftable but also by one or more vertical shafts, which may be electrodes or electrically insulated dummy electrodes; the vertical shafts are capable of shifting vertically in synchronism with the existing two electrodes, and are arranged in a manner such that the existing two electrodes and the vertical shafts are at regular intervals along the bottom circumference of the cylindrical heater.

Abstract: In the Czochralski crucible pulling of crystal ingots, in particular those of silicon and having particularly large crystal diameters, the degree of filling of the crucible is kept approximately constant during the pulling process by continuously adding solid or liquid recharging material. According to the invention, the known disadvantages of thermal disturbances and the introduction of impurities and particles are overcome by a recharging system with a gas-tight seal, comprising additional crucible, stock container for semiconductor material and dopant having the appropriate feedlines and an exhaust gas line. In addition, the process makes possible a regulatable and separate recharging of dopant via the additional crucible.

Abstract: There is disclosed a method for growing single crystal material, particularly silicon, in modified Czochralski process furnaces and chambers. The Czochralski process equipment is modified to permit continuous addition of polycrystalline material, preferably in dry powdered form to a molten bath of the material that is maintained at a constant shallow depth. For this purpose, a circular baffle is placed within the crucible containing the molten bath of the material, dividing the crucible into an annular feed zone and a central crystal growth zone. A cylindrical boule is withdrawn from the central crystal growth zone. The surrounding walls of the crucible, and graphite cup that supports the crucible, provide a heating and annealing zone in which the boule is continuously annealed as it is withdrawn from the molten pool. Dopants are also introduced into the annular feed zone, either separately or admixed with the polycrystalline material.

Abstract: An apparatus for making a silicon single crystal large in diameter dependently on the Czochralski process, wherein appropriate openings (11) are provided on the warmth keeping over (10) so as to prevent an undesirable influence caused by atmospheric gas. The major elements of the apparatus are that the sum of areas of the openings (11) is larger than the area of gap (18) formed between the lower end of the warmth keeping cover (10) and the level of silicon solution, and that the warmth keeping cover and the heat insulating member (12) are composed of sheet metal.

Abstract: A method for growing silicon single crystal uses as materials, silicon granules prepared by the silane process and having a residual hydrogen concentration of 7.5 wtppm or less, silicon granules prepared by the trichlorosilane process and having a residual chlorine concentration of 15 wtppm or less. In the case where such silicon granules are used, a bursting phenomenon does not occur when the silicon granules are melted. As a result, there is no scattered matter due to the bursting phenomenon, whereby the growth condition of the single crystal is not disturbed.