Abstract: The invention relates to the field of CdTe or CdZnTe single crystal production and to an improved solid-phase method of obtaining large CdTe or CdZnTe crystals having an excellent crystalline structure.

Abstract: A method for a growing solid-state, spectrometer grade II-VI crystal using a high-pressure hydrothermal process including the following steps: positioning seed crystals in a growth zone of a reactor chamber; positioning crystal nutrient material in the nutrient zone of the chamber; filling the reactor with a solvent fluid; heating and pressuring the chamber until at least a portion of the nutrient material dissolves in the solvent and the solvent becomes supercritical in the nutrient zone; transporting supercritical from the nutrient zone to the growth zone, and growing the seed crystals as nutrients from the supercritical fluid deposit on the crystals.

Abstract: Provided is a system and continuous flow process for producing monodisperse semiconductor nanocrystals comprising reservoirs for the starting materials, a mixing path in which the starting materials are mixed, a first reactor in which the mixture of starting materials is mixed with a coordinating solvent and in which nucleation of particles occurs, a second reactor in which controlled growth of the nanocrystals occurs, and a growth termination path in which the growth of the nanocrystals is halted.

Abstract: An epitaxial growth method of semiconductor can reliably avoid irregularities from being produced when a II-VI compound semiconductor is grown epitaxially. When this method is applied to a method of manufacturing a semiconductor light-emitting device, it is possible to obtain a semiconductor light-emitting device having a long life and excellent light-emitting characteristic. When a II-VI compound semiconductor is grown epitaxially, a VI/II ratio, i.e., a supplying ratio of VI-group element and II-group element used in the epitaxial growth is selected in a range of from 1.3 to 2.5.

Abstract: There is here provided a method for growing single crystals from a melt which comprises the steps of preparing a double structure crucible constituted of an inner tube and an outer tube; placing a raw material in the inner tube; hermetically sealing the outer tube; and heating/melting the raw material to perform crystal growth.According to the present invention, it is possible to hermetically confine and to crystallize the raw material even at a high temperature.