Abstract: A pulse shot-type flow rate control device including first and second shutoff valves, a tank, a pressure sensor, and a controller is caused to perform two or more processes. In each process, the controller repeats pulse shots of alternately causing the first shutoff valve and the second shutoff valve to open and close, changes a way of the pulse shots based on a pressure difference between the pressure after filling and the pressure after discharge, and controls a volume flow rate. In each process, the controller stores, as an optimal filling time, a filling time when the volume flow rate is controlled to a target flow rate, and opens and closes the first shutoff valve by using the optimal filling time in a first pulse shot in the next process.

Abstract: A pulse shot-type flow rate control device including first and second shutoff valves, a tank, a pressure sensor, and a controller is caused to perform two or more processes. In each process, the controller repeats pulse shots of alternately causing the first shutoff valve and the second shutoff valve to open and close, changes a way of the pulse shots based on a pressure difference between the pressure after filling and the pressure after discharge, and controls a volume flow rate. In each process, the controller stores, as an optimal filling time, a filling time when the volume flow rate is controlled to a target flow rate, and opens and closes the first shutoff valve by using the optimal filling time in a first pulse shot in the next process.

Abstract: Methods and systems for estimating values of parameters of interest based on repeated measurements of a wafer during a process interval are presented herein. In one aspect, one or more optical metrology subsystems are integrated with a process tool, such as an etch tool or a deposition tool. Values of one or more parameters of interest measured while the wafer is being processed are used to control the process itself. The measurements are performed quickly and with sufficient accuracy to enable yield improvement of a semiconductor fabrication process flow. In one aspect, values of one or more parameters of interest are estimated based on spectral measurements of wafers under process using a trained signal response metrology (SRM) measurement model. In another aspect, a trained signal decontamination model is employed to generate decontaminated optical spectra from measured optical spectra while the wafer is being processed.

Abstract: A substrate processing system includes a processing chamber including a showerhead, a plasma power source and a pedestal spaced from the showerhead to support a substrate. A filter is connected between the showerhead and the pedestal. A variable bleed current circuit is connected between the filter and the pedestal to vary a bleed current. A controller is configured to adjust a value of the bleed current and configured to perform curve fitting based on the bleed current and DC self-bias voltage to estimate at least one of electrode area ratio, Bohm current, and radio frequency (RF) voltage at a powered electrode.

Abstract: A substrate processing apparatus includes a process chamber in which etching by a corrosive gas is performed to remove a film formed therein after a film formation process, a susceptor disposed in the process chamber and having a substrate loading portion, a stationary shaft passing through the susceptor, a first securing member securing the susceptor at an upper side, a second securing member securing the susceptor at a lower side, a pressing member disposed below the susceptor to urge the stationary shaft in a downward direction while urging the second securing member in an upward direction, and a stopping member formed above the susceptor and engaged with the stationary shaft to urge the first securing member in cooperation with the pressing member. The susceptor, the first securing member and the stopping member are made of a material having corrosion resistance higher than the pressing member.

Abstract: Embodiments described herein provide for electrically reconfigurable deposition masks. One embodiment is a deposition mask that includes a plurality of electrical elements. Each of the electrical elements has an opening between a top surface and a bottom surface that constricts based on an electrical signal. A plurality of top surfaces of the electrical elements defines a top surface of the mask, and a plurality of bottom surface of the electrical elements defines a bottom surface of the mask.

Abstract: The substrate coating device (10) includes a slit nozzle (1), a first camera (3), a second camera (4), a control section (5), a pump (8), and a pressure control chamber (9). The control section (5) controls the supply of the coating liquid from the pump (8) to the slit nozzle (1) in accordance with the result of comparison between a bead shape imaged by the first camera (3) and a reference shape. The control section (5) also controls the air pressure on the upstream side of the slit nozzle (1) by the pressure control chamber (9) in accordance with the result of comparison between a distance measured from an image taken by the second camera (4) and a reference distance.

Abstract: Marking devices for dispensing a marking substance on the ground and marking methods are provided. The marking devices and marking methods use one or more detection mechanisms to detect one or more characteristics of the marking substance. In some embodiments, the detection mechanism may be, but is not limited to, an optical sensor, an olfactory sensor, a weight sensor, a switch device, and any combination thereof. The one or more detection mechanisms may provide, for example, the capability to: (1) determine the type of marking substance that is installed in the marking device; (2) determine in advance of or during a marking operation the amount of marking substance within the marking dispenser; and (3) determine when the marking dispenser is becoming empty.

Abstract: A coating device includes a reaction device, a mixing device, a deposition device, a first switching device and a second switching device. The reaction device defines a reaction chamber. The mixing device is connected to the reaction device and defines a mixing chamber that communicates with the reaction chamber. The deposition device is connected to the mixing device and defines a deposition chamber that communicates with the mixing chamber. The first switching device is configured to communicate the reaction chamber and the mixing chamber and separate the reaction chamber from the mixing chamber. The second switching device is configured to communicate the mixing chamber and the deposition chamber and separate the mixing chamber from the deposition chamber.

Abstract: A coating device includes a reaction device, a mixing device, a deposition device, a first switching device and a second switching device. The reaction device defines a reaction chamber. The mixing device is connected to the reaction device and defines a mixing chamber that communicates with the reaction chamber. The deposition device is connected to the mixing device and defines a deposition chamber that communicates with the mixing chamber. The first switching device is configured to communicate the reaction chamber and the mixing chamber and separate the reaction chamber from the mixing chamber. The second switching device is configured to communicate the mixing chamber and the deposition chamber and separate the mixing chamber from the deposition chamber.

Abstract: A plasma processing apparatus (100) includes: a plasma generation means for generating a plasma in a processing chamber (1); a measurement section (60) for measuring an integrated value of the particle number of an active species contained in the plasma and moving toward a processing object (wafer W); and a control section (50) for controlling the apparatus in such a manner as to terminate plasma processing when the measured integrated value has reached a set value. The measurement section (60) measures the particle number of the active species by emitting a predetermined laser light from a light source section (61) toward the plasma, and receiving the laser light in a detection section (63) provided with a VUV monochromator.

Abstract: A regeneration apparatus for an electroless plating solution, which includes a sensor for measuring the formation rate of phosphorous acid formed in a plating tank in response to a plating treatment, a split device for taking out a plating solution in the plating tank to transfer the plating solution to a first processing tank, a sensor for measuring the concentration of the phosphorous acid contained in the plating solution taken out, an addition device for supplying calcium carbonate or calcium hydroxide, an amount of which is required for producing a calcium phosphite from the phosphorous acid contained in the plating solution, to the first processing tank, a separation device for separating and removing the calcium phosphite produced in the first processing tank from the plating solution, and a return pump for transferring the plating solution from which the calcium phosphite has been separated and removed to the plating tank.

Abstract: A regeneration apparatus for an electroless plating solution includes a sensor for measuring the formation rate of phosphorous acid formed in a plating tank in response to a plating treatment, a split device for taking out a plating solution in the plating tank to transfer the plating solution to a first processing tank, a sensor for measuring the concentration of the phosphorous acid contained in the plating solution taken out, an addition device for supplying calcium carbonate or calcium hydroxide, an amount of which is required for producing a calcium phosphite from the phosphorous acid contained in the plating solution, to the first processing tank, a separation device for separating and removing the calcium phosphite produced in the first processing tank from the plating solution, and a return pump for transferring the plating solution from which the calcium phosphite has been separated and removed to the plating tank.

Abstract: A liquid processing apparatus includes: a substrate holding member configured to rotate along with a substrate held thereon in a horizontal state; a rotary cup configured to surround the substrate held on the substrate holding member and to rotate along with the substrate; a rotation mechanism configured to integratedly rotate the rotary cup and the substrate holding member; a liquid supply mechanism configured to supply a process liquid onto the substrate; and an exhaust/drain section configured to perform gas-exhausting and liquid-draining of the rotary cup. The exhaust/drain section includes an annular drain cup configured to mainly collect and discharge a process liquid thrown off from the substrate, and an exhaust cup surrounding the drain cup and configured to mainly collect and discharge a gas component from inside and around the rotary cup. Liquid-draining from the drain cup and gas-exhausting from the exhaust cup are performed independently of each other.

Abstract: Provided is a cleaning method for removing a film adhered inside a processing chamber of a substrate processing apparatus used for forming a desired film on a substrate by supplying a material gas for film formation. The method is provided with a step of supplying a halogen containing gas into the processing chamber, and a step of supplying a fluorine containing gas into the processing chamber while supplying the halogen containing gas, after starting to supply the halogen containing gas. In the step of supplying the fluorine containing gas, a supply flow volume ratio of the halogen containing gas to the entire gas supplied into the processing chamber is within a range of 20-25%.

Abstract: An electroless metal deposition process to make a semiconductor device uses a plating bath solution having a reducing agent. A sample of the bath solution is taken and the pH of the sample is increased. The hydrogen evolved from the sample is measured. The hydrogen evolved is used to determine the concentration of the reducing agent present in the sample. Based on the determined reducing agent concentration, the plating bath solution is modified.

Abstract: Zero point shift based on thermal siphon effect occurring actually when a substrate is processed is detected accurately and corrected suitably. The semiconductor fabrication system comprises a gas supply passage (210) for supplying gas into a heat treatment unit (110), an MFC (240) for comparing an output voltage from a detecting unit for detecting the gas flow rate of the gas supply passage with a set voltage corresponding to a preset flow rate and controlling the gas flow rate of the gas supply passage to the set flow rate, and a control unit (300).

Abstract: An apparatus and method for gas injection sequencing in order to increase the gas injection total pressure while satisfying an upper limit to the process gas flow rate, thereby achieving gas flow uniformity during a sequence cycle and employing practical orifice configurations. The gas injection system includes a gas injection electrode having a plurality of regions, through which process gas flows into the process chamber. The gas injection system further includes a plurality of gas injection plenums, each independently coupled to one of the aforesaid regions and a plurality of gas valves having an inlet end and an outlet end, where the outlet end is independently coupled to one of the aforesaid plurality of gas injection plenums. The gas injection system includes a controller coupled to the plurality of gas valves for sequencing the flow of process gas through the aforesaid plurality of regions.

Abstract: Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers are disclosed herein. In one embodiment, the system includes a gas phase reaction chamber, a first exhaust line coupled to the reaction chamber, first and second traps each in fluid communication with the first exhaust line, and a vacuum pump coupled to the first exhaust line to remove gases from the reaction chamber. The first and second traps are operable independently to individually and/or jointly collect byproducts from the reaction chamber. It is emphasized that this Abstract is provided to comply with the rules requiring an abstract. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: A system for delivering pulses of a desired mass of gas, including a chamber, a first valve controlling flow into the chamber, a second valve controlling flow out of the chamber. A controller is programmed to receive the desired mass for each pulse through an input interface, close the second valve and open the first valve, receive chamber pressure measurements from a pressure transducer, and close the first valve when pressure within the chamber rises to a predetermined upper level. The controller is also programmed to deliver pulses of gas using just the second valve, wherein, for each pulse, the second valve is opened until a calculated mass for the pulse equals the desired mass for the pulse. The first valve is not required to be opened and closed for each pulse and is, therefore, used less frequently and has an extended life.

Abstract: A system for delivering a desired mass of gas, including a chamber, a first valve controlling flow into the chamber, a second valve controlling flow out of the chamber, a pressure transducer connected to the chamber, an input device for providing a desired mass to be delivered, and a controller connected to the valves, the pressure transducer and the input device. The controller is programmed to receive the desired mass from the input device, close the second valve and open the first valve, receive chamber pressure measurements from the pressure transducer, and close the inlet valve when pressure within the chamber reaches a predetermined level. The controller is then programmed to wait a predetermined waiting period to allow the gas inside the chamber to approach a state of equilibrium, then open the outlet valve at time=t0, and close the outlet valve at time=t* when the mass of gas discharged equals the desired mass.

Abstract: A system for delivering a desired mass of gas, including a chamber, a first valve controlling flow into the chamber, a second valve controlling flow out of the chamber, a pressure transducer connected to the chamber, an input device for providing a desired mass to be delivered, and a controller connected to the valves, the pressure transducer and the input device. The controller is programmed to receive the desired mass from the input device, close the second valve and open the first valve, receive chamber pressure measurements from the pressure transducer, and close the inlet valve when pressure within the chamber reaches a predetermined level. The controller is then programmed to wait a predetermined waiting period to allow the gas inside the chamber to approach a state of equilibrium, then open the outlet valve at time=t0, and close the outlet valve at time=t* when the mass of gas discharged equals the desired mass.

Abstract: A method and an apparatus for measuring the amount (CW) of a coating (2) on a paper web (1). The amount (CA) of at least one component in the coating (2) on the paper web (1) is measured and the composition (CC) of the coating (2) to be transferred to the paper web (1) is determined. The amount (CW) of the coating (2) on the paper web (1) is determined on the basis of the amount (CA) of at least one component in the coating (2) on the paper web (1) and the composition (CC) of the coating (2) to be transferred to the paper web (1).

Abstract: This invention provides a thin film deposition process making it possible to form a thin film having a desired composition with good reproducibility and high efficiency; a thin film deposition device therefore; a FTIR gas analyzer used in the thin film deposition process; and a mixed gas supplying device used in the thin film deposition process. The thin film deposition process comprises the steps of mixing a plurality of organic metal gases in a gas mixing chamber and supplying the mixed gas into a reaction chamber to deposit a thin film on a substrate positioned in the reaction chamber, wherein the mixture ratio between/among the organic metal gases supplied into the gas mixing chamber is measured with a FTIR gas analyzer fitted to either the gas mixing chamber or the reaction chamber and then on the basis of results of the measurement, the flow rates of the organic metal gases are individually adjusted.

Abstract: A dosing device for a program controlled spray painting apparatus adapted for dosing electrically conductive fluid materials to a spray gun/applicator. The spray gun may be charged at a high voltage for electrostatically charged atomizing of electrically conductive fluid materials. A coating system includes the dosing device, which is moved by an actuator between a connecting member for a paint filling line or a cleaning fluid supply line, and a spray gun. A method and a computer program for carrying out the method.

Abstract: Methods and apparatus for coating particulate material are provided. The apparatus includes a vessel having a top and a bottom, a vertically extending conduit having an inlet in the vessel and an outlet outside of the vessel, a first fluid inlet in the bottom of the vessel for introducing a transfer fluid, a second fluid inlet in the bottom of the vessel for introducing a coating fluid, and a fluid outlet from the vessel. The method includes steps of agitating a material, contacting the material with a coating material, and drying the coating material to produce a coated material. The invention may be adapted to coat aerogel beads, among other materials. A coated aerogel bead and an aerogel-based insulation material are also disclosed.

Abstract: A system and method for coating a substrate with a film is described. One embodiment includes a process that provides a substrate on which to deposit a film; generates a plasma to produce radicals from a support gas; produces the radicals from the support gas; disassociates a precursor gas using the radicals; deposits material from the disassociated precursor gas on the substrate; and controls the amount of electromagnetic radiation to which the deposited material is exposed.

Abstract: According to the present invention, in changing the concentration of a treatment solution supplied to a substrate, a volume of an existing treatment solution in a tank connected to a treatment solution supply section for supplying the treatment solution to the substrate is first measured. Based on this measured value, a minimum drain volume of the existing treatment solution to be drained out from the tank and a supply volume of either a treatment solution with a predetermined concentration or a diluting fluid to be supplied into the tank is calculated respectively in order to change the treatment solution in the tank to be in an intended volume and to have an intended concentration. Then, the calculated drain volume of the existing treatment solution is drained out from the tank. Meanwhile, the calculated supply volume of either the treatment solution with the predetermined concentration or the diluting fluid is supplied into the tank.

Abstract: A coating film forming apparatus for forming a film by applying a coating solution to a substrate, which is provided with a cassette section, coating unit, developing unit, pre-treatment/post-treatment units and a main arm for transferring the substrate between the respective units. In the coating unit, provided is a coating section in which a resist is applied on the substrate in a manner of single stroke by intermittently moving the substrate in a Y-direction and by moving a nozzle in an X-direction, and provided is a reduced-pressure drying section for drying under reduced pressure the substrate after being applied, and further provided is equipment for removing the coating film adhered to a periphery of the substrate. Additionally, when the reduced-pressure drying section is arranged outside the coating unit, the main arm is covered with a cover so that the inside thereof is under a solvent atmosphere.

Abstract: In a method of monitoring the formation of a coating on a single particle (P), an apparatus is used which comprises means (2,5,6,9) for arranging said particle (P) at a given spatial location, and a fluid supply unit (3) adapted to apply a coating fluid to the particle (P) such that the coating is formed. Further, the apparatus has a measurement unit (4) which is adapted to perform a spectrometric measurement on the coating during formation thereof, and to derive a measurement value of at least one principle parameter related to the coating. This, such principle parameters, for example the thickness, thickness growth rate and physical and/or chemical properties related to the quality of the coating, as well as heat, mass and momentum transfer, can be continuously and non-invasively monitored during the coating process on the single particle (P).

Abstract: An apparatus including: a movement device that moves an object to be coated; a slot die coater equipped with a position sensor mounted on at least one end of the slot die coater and which slot die coater controllably dispenses coating material onto the moving object; and at least one servor motor-controller system in electrical contact with the position sensor, wherein the position sensor senses the position of the slot die coater relative to the object and wherein the at least one servor motor-controller system adjusts the position of the slot die coater relative to the object if the position of the slot die coater relative to the moving substrate deviates from a set of predetermined coordinates.

Abstract: The present invention provides a finely-divided powder spray apparatus having a spray nozzle pipe for discharging finely-divided powders from the tip together with a gas stream, which is disposed at a prescribed distance from the member to be sprayed and inclined in a prescribed direction to the member; and a moving-speed control means which controls the moving-speed of the tip of the spray nozzle pipe in accordance with the quadratic function, which indicates the reduction rate of the density of the deposited finely-divided powders based on the distance between a peak point of the density of the finely-divided powders deposited on the member to be sprayed in a trial spray and a spray point at which an extension from the spray nozzle pipe intersects with the member to be sprayed.

Abstract: A system and method for real time deposition process control based on resulting product detection, where the system and method detect an amount of at least one reaction product in real time, while the deposition process is being performed, the detected amount of reaction product is compared with a reference amount, and a comparison result is fed back in real time to adjust a supply of one or more reactants. The system and method provide real time control over the deposition process and/or reduce the number of wafers produced that do not meet processing target values.

Abstract: In a coating apparatus for supplying a mixed solution of a resist solution and a thinner onto a wafer from a nozzle, the nozzle is connected to a mixed solution supply pipe, and the resist solution and the thinner are supplied to the mixed solution supply pipe from a resist solution supply pipe and a thinner supply pipe respectively through a junction pipe. The diameter of the junction pipe is set smaller than those of other supply pipes, whereby the resist solution and the thinner can be mixed efficiently in the junction pipe, and as a result the wafer is coated with the mixed solution so that a uniform film thickness can be obtained within the surface of the wafer.

Abstract: A backside cannelure of an electrode to provide for detecting semiconductor wafer shift after the wafer has been positioned over the cannelure of the electrode is disclosed. The wafer has a backside and a proper position over the cannelure. The cannelure exposes the backside of the wafer to a gas piped in through one or more holes of the electrode. The cannelure has a size such that deviation of the wafer from its proper position by more than a threshold partially exposes the cannelure, such that the gas leaks from the cannelure as now partially exposed. A gas flow detector may detect the gas leaking from the cannelure, and provide corresponding detection of the wafer deviating from its proper position.

Abstract: A method and system for controlling the fabrication of an optical device having a given property at a defined wavelength. The method comprises the steps of providing a substrate, depositing a material on the substrate to form a film thereon, and controlling a set of manufacturing parameters as the film is being formed on the substrate to make the optical device. The method comprises the further steps of generating an optical signal having a given wavelength, dithering the wavelength of the optical signal, and applying the dithered optical signal to the film being formed on the substrate to modulate the optical signal. A correlation signal is generated to represent the difference between the given wavelength and the defined wavelength, and that correlation signal is used to adjust at least one of the manufacturing parameters to make the optical device with said given property at the defined wavelength.

Abstract: The invention relates to a method for electrically controlling a flow of material, wherein a single- or multi-component, essentially polymer-based material (1), such as plastics, elastomer or the like, is charged electrically (I) and sprayed (II) in an electrical field (E) to a three-dimensional mould (2)/target (3). The method of the invention makes use of the mould (2)/target (3) set at an electric potential and provided with two or more treatment blocks (Li) to be set at voltage levels different from each other, especially for coordinating the courses of sprayed material particles and the electrical field (E) affecting the same, in such a manner that each section/area of the mould/target surface forms a material layer of desirable thickness in the spraying cycle (II). The invention relates also to an apparatus operating in accordance with the method.

Abstract: A method of controlling the content of a chemical bath includes the steps of: determining a replenishment condition for the chemical bath; defining a unit of the replenishment condition; establishing a pacing factor corresponding to a replenishment volume of a replenishment medium per unit of the replenishment condition; and defining a replenishment threshold corresponding to the product of a predetermined number of the defined units of the replenishment condition and the pacing factor. The rate of continued replenishment of the predetermined constituent of the chemical bath is determined in response to the replenishment condition, which may be elapsed time, ampere-hours (or coulombs), number of product loads, product surface area, or line speed over time. The method replenishes constituents as they actually are consumed. It also prevents depletion (or buildup in the case of decanting a by-product) and the associated time delay related to detection and correction.

Abstract: A new method of electroless plating a metal layer onto a semiconductor substrate in the manufacture of an integrated circuit device has been achieved. A semiconductor substrate is provided. A metal layer is electroless plated onto the semiconductor substrate. Light is shielded from the semiconductor substrate to thereby eliminate the photoelectric effect in the semiconductor substrate during the electroless plating. A new apparatus for electroless plating a metal layer onto a semiconductor substrate is achieved. The apparatus comprises, first, an electroless plating tank capable of holding an electroless plating solution. The sidewalls and bottom of said electroless plating tank prevent light intrusion into the electroless plating solution during a plating process. Second, a wafer fixture capable of suspending a semiconductor substrate wafer in the electroless plating solution in the electroless plating tank during the plating process is provided.

Abstract: A spreading state of an outline of the outer periphery of a coating solution is detected by a detecting sensor, and the rotation speed or the like of a wafer as a substrate is controlled so that a spreading speed of the outline becomes not more than a predetermined speed with no danger of producing a scratchpad. Alternatively, the width in the radius direction of a scratchpad is measured, and the rotation speed or the like of the wafer is controlled so that the width in the radius direction becomes not more than a predetermined value. Thereby, occurrence of the scratchpad is prevented or the degree thereof is decreased, thereby avoiding uncoating of the coating solution on the substrate and reducing the amount of the coating solution used.

Abstract: The invention relates to a method and a device for powdering printed paper sheets. According to the invention, the performance of the air-pressure generator which generates the air stream for the powder-air mixture can be adjusted in line with the machine speed or the speed of transportation of the paper sheets.

Abstract: An apparatus for distributing a soap based release agent upon a surface comprising; a means for metering a controlled quantity of a liquid metallic soap into a pressurized water stream to form a pressurized aqueous solution having a controlled dilution ratio of soap to water, at least one manifold connected to receive the pressurized aqueous solution, and a plurality of nozzles mounted upon the manifold to uniformly distribute the pressurized liquid solution upon at least one surface. The surface may further be defined as a planar surface, moving unidirectional along a fixed path at a predetermined variable speed and defined by a surface area of length multiplied by width. The planar surface has a fixed width, wherein the surface area moving past a fixed point for a predetermined period of time is a function of the speed of the planar surface moving past the fixed point.

Abstract: The present invention relates to a process and an apparatus for detecting a fault in a flowing liquid sheet and in particular in a coating curtain. The process comprises the following steps: transmitting an electromagnetic beam to the sheet so as to irradiate approximately the entire width of the sheet in a direction approximately transverse to the sheet; recovering a beam reflected by the sheet by way of a collector; defining a reference position of the reflected beam on the collector; and noting the deviations of the reflected beam in relation to the previously defined reference position.

Abstract: A new method of electroless plating a metal layer onto a semiconductor substrate in the manufacture of an integrated circuit device has been achieved. A semiconductor substrate is provided. A metal layer is electroless plated onto the semiconductor substrate. Light is shielded from the semiconductor substrate to thereby eliminate the photoelectric effect in the semiconductor substrate during the electroless plating. A new apparatus for electroless plating a metal layer onto a semiconductor substrate is achieved. The apparatus comprises, first, an electroless plating tank capable of holding an electroless plating solution. The sidewalls and bottom of said electroless plating tank prevent light intrusion into the electroless plating solution during a plating process. Second, a wafer fixture capable of suspending a semiconductor substrate wafer in the electroless plating solution in the electroless plating tank during the plating process is provided.

Abstract: Disclosed is a method for joint oxydation and heat treatment of workpieces at temperatures ≦1300° in the treatment chamber of an oven containing a neutral or reactive gas in a temperature range above 570°. In order for the process to be reproducible and to produce homogeneous oxide layers, the PH2O/PH2 ratio is adjusted after transformation of the workpiece structure such as found at the ambient temperature into the structure wanted during the heat treatment in such a way that the line FeO+H2=Fe+H2O is exceeded and an oxide layer is formed from FEO<10 &mgr;m.

Abstract: A method and device are disclosed for monitoring lacquer consumption per can in a lacquer application unit. The device includes a counter providing can number data on the number of cans being applied with lacquer in the application unit; a tank for intermediate storage of lacquer; a lacquer feeder for feeding lacquer from a lacquer reservoir to the tank through an inlet pipe; and a lacquer feeder for feeding lacquer from the tank to the application unit. A valve is provided in the inlet pipe for intermittent movement between a closed position and an open position, in which lacquer is admitted into the tank. A flow meter is arranged to provide flow rate data on the amount of lacquer flowing into the tank.

Abstract: A method for making an aerogel film includes the steps of performing a gelation reaction of a metal alkoxide on a substrate to prepare a substrate with a wet-gel film, and converting the wet-gel film into an aerogel film by a supercritical or sub-critical drying process of the substrate with the wet-gel film, wherein the degree of gelation of the wet-gel film is controlled to be a predetermined value at the start of the supercritical or sub-critical drying process. Aerogel films having uniform qualities are produced by the supercritical or sub-critical drying process in one lot.

Abstract: Provided is a novel method of and system for recovering and recirculating a deuterium-containing gas. According to the inventive method, a deuterium-containing feed gas is introduced into a chamber. An exhaust gas containing deuterium is removed from the chamber. The deuterium concentration of the exhaust gas is adjusted to a predetermined value, thereby producing a concentration-adjusted gas stream. Finally, the concentration-adjusted gas stream is introduced into the chamber as the deuterium-containing feed gas. The invention makes the use of deuterium, for example, in the mass production of semiconductor devices, commercially feasible.

Abstract: A spreading state of an outline of the outer periphery of a coating solution is detected by a detecting sensor, and the rotation speed or the like of a wafer as a substrate is controlled so that a spreading speed of the outline becomes not more than a predetermined speed with no danger of producing a scratchpad. Alternatively, the width in the radius direction of a scratchpad is measured, and the rotation speed or the like of the wafer is controlled so that the width in the radius direction becomes not more than a predetermined value. Thereby, occurrence of the scratchpad is prevented or the degree thereof is decreased, thereby avoiding uncoating of the coating solution on the substrate and reducing the amount of the coating solution used.

Abstract: A paster for the application of a film of water-containing adhesive to a running substrate of cigarette paper or the like automatically replaces the evaporated percentage of water when the substrate-processing machine is idle but the paster continues to circulate adhesive in order to prevent a rise in the viscosity of the then circulating and water releasing adhesive. The quantity of water in the circulating adhesive and other parameters (such as the temperature) of the adhesive are monitored by several sensors, and signals which are transmitted by such sensors are processed to regulate the admission of water in order to maintain the percentage of water, and hence the consistency, of the circulating adhesive within a range not appreciably departing from that when the paster is in actual use to apply one or more films of adhesive to the running substrate.