Abstract: An adhesive application device for applying, includes a nozzle unit having a number of nozzles for applying an adhesive to a material which is moved along a direction of transport, said nozzles being displaceable transversely to the direction of transport along a first guide spindle; and plural individual gluing heads, each being arranged separately from each other on respective second separate guide spindles, so as to be displaceable transversely to the direction of transport.

Abstract: Provided is a method of manufacturing a semiconductor device. The method includes: carrying a substrate, which has a Ge-containing film on at least a portion of a surface thereof, into a process chamber; heating an inside of the process chamber, into which the substrate is carried, to a first process temperature; and terminating a surface of the Ge-containing film, which is exposed at a portion of the surface of the substrate, by Si by supplying at least a Si-containing gas to the inside of the process chamber heated to the first process temperature.

Abstract: The invention provides a method for dispersing particles within a reaction field, the method comprising confining the particles to the reaction field using a standing wave. The invention also provides a system for coating particles, the system comprising a reaction zone; a means for producing fluidized particles within the reaction zone; a fluid to produce a standing wave within the reaction zone; and a means for introducing coating moieties to the reaction zone. The invention also provides a method for coating particles, the method comprising fluidizing the particles, subjecting the particles to a standing wave; and contacting the subjected particles with a coating moiety.

Abstract: Provided is a substrate processing apparatus, including: a first gas supply system to supply raw material gas of a film being deposited in at least a portion of the surface of the substrate, and first etching gas which removes the deposited film, from a first gas supply nozzle to the processing chamber; a second gas supply system to supply second etching gas, which removes the deposited film, from a second gas supply nozzle to the processing chamber; and a control device to control the first and second gas supply systems such that the raw material gas is supplied from the first gas supply nozzle and the second etching gas is supplied from the second gas supply nozzle while the substrate is in the processing chamber, and the first etching gas is supplied from the first gas supply nozzle while the substrate is not in the processing chamber.

Abstract: A drug coating apparatus (100) for coating an implant (206) with a drug is described. The drug coating apparatus (100) includes a holding unit (102) having a top collet (202-1) for holding the implant (206) from a top end of the implant (206), and a bottom collet (202-2) to hold the implant (206) from a bottom end of the implant (206). The drug coating apparatus (100) includes at least one rotary drive (115) coupled to the holding unit (102) for rotating the top collet (202-1), the bottom collet (202-2) and the implant (206), and includes a spraying unit (104) to spray-coat the drug on the implant (206).

Abstract: A substrate processing apparatus includes a control unit executing a first recipe for substrate processing. After the substrate processing is completed through the execution of the first recipe, if a predetermined time is elapsed in a state that a next substrate to be processed is not carried into the process chamber, a second recipe is executed for maintaining a process chamber where the substrate is processed.

Abstract: A nitride film manufacturing apparatus forms a nitride film on a substrate provided in a chamber by a plasma CVD technique. Specifically, the nitride film manufacturing apparatus includes a controller for calculating a first period for applying first high-frequency power having a relatively high frequency and a second period for applying second high-frequency power having a relatively low frequency in order to obtain desired compressive stress or tensile stress of the nitride film, based on distribution of a refractive index of the nitride film and/or distribution of a deposition rate of the nitride film, the distribution falling within a predetermined numerical range and being obtained using the first high-frequency power and/or the second high-frequency power applied independently for forming the nitride film.

Abstract: Chemical vapor deposition (CVD) systems for forming layers on a substrate are disclosed. Embodiments of the system comprise at least two processing chambers that may be linked in a cluster tool. A first processing chamber provides a chamber having a controlled environmental temperature and pressure and containing a first environment for performing CVD on a substrate, and a second environment for contacting the substrate with a plasma; a substrate transport system capable of positioning a substrate for sequential processing in each environment, and a gas control system capable of maintaining isolation. A second processing chamber provides a CVD system. Methods of forming layers on a substrate comprise forming one or more layers in each processing chamber. The systems and methods are suitable for preparing Group III-V, Group II-VI or Group IV thin film devices.

Abstract: A coating powder feed method, coating powder feeding device, electrostatic powder spraycoating apparatus containing such a coating powder feeding device. The invention includes a dense phase powder pump fitted with at least one feed chamber. A control signal to create a partial vacuum in the feed chamber is generated no earlier than simultaneously with, preferably by a predetermined delay time after, a control signal opening a powder intake valve of the feed chamber, as a result of which the beginning of partial vacuum buildup in the feed chamber shall take place no earlier than simultaneously with the initial opening of the powder intake valve or by a defined time delay after the opening of the powder intake valve.

Abstract: A substrate processing apparatus is disclosed equipped with a transfer mechanism that transfers a substrate processed at a processing block to a carrier so that the increase of the number of transfer process is suppressed, improving the processing efficiency. The substrate processing apparatus is configured in such a way that, when a second-transfer module houses at least one substrate and a carrier that can house the at least one substrate is not placed in a carrier-placement unit, the at least one substrate is transferred to a buffer module. When the second transfer module houses at least one substrate and the carrier that can house the at least one substrate is placed in the carrier-placement unit, the at least one substrate is transferred to the carrier, regardless of whether or not a substrate is being transferred from the buffer module to the carrier.

Abstract: An apparatus for depositing a coating may comprise a first processing chamber configured to deposit a first reactant as a reactant layer on a substrate during a first time period. A second processing chamber may be configured to direct ions incident on the substrate at a second time and configured to deposit a second reactant on the substrate during a second time period, wherein the second reactant is configured to react with the reactant layer.

Abstract: The invention relates to a film coating system. The system includes serially arranged working zones including a rough vacuum feeding section, a high vacuum feeding section, an optical layer coating zone, a pretreatment zone, a transparent conductive layer coating zone and a pressure balanced exhausting zone. The system further includes a conveyor device for carrying a substrate which has been provided on its periphery with an ink frame layer and for delivering the substrate to the respective working zones, and a controlling device that controls the times for the substrate to be retained in the respective working zones based upon a time interval between the entry of two successive conveyor devices into the rough vacuum feeding section. The invention ensures a smooth operation of the production line, and the transparent conductive film coated thereby does not easily exfoliate and exhibits the advantageous properties of high optical performance and low surface resistance.

Abstract: Hydrating an object bearing a latent fingerprint and then selectively drying the object leaving the fingerprint hydrated. The hydrated fingerprint is then coated with cyanoacrylate ester, preferably in a heat accelerated cyanoacrylate ester vacuum chamber. Hydrating is preferably accomplished by chilling the object below a dew point and then exposing the object to humidified air to condense a thin uniform layer of water over the object and latent fingerprint. Drying is preferably done with a vacuum. After drying reaches the preferred state, the CE is heated and coats the condensation-hydrated latent fingerprint. Preferably, the method is implemented in an automated system using one computer-controlled chamber for chilling, condensing, vacuum drying, and CE coating the latent fingerprint. The operator simply puts the object in the chamber, initiates the process by computer, and is prompted by the computer to remove the recovered latent print. Prints unrecoverable by prior art means are recovered.

Abstract: When alternately performing a film deposition step where a silicon-containing gas and O3 gas are alternately supplied to a substrate on a susceptor by rotating the susceptor thereby to forma thin film of the reaction product, and an alteration step where the reaction product is altered by irradiating plasma to the substrate, plasma intensity of the plasma is changed during film deposition. Specifically, the plasma intensity is lower when a thickness of the thin film is small (or at an initial stage of the film deposition—alteration step), and is increased as the thin film becomes thicker (or as the number of the film deposition steps is increased). Alternatively, the plasma intensity is higher when the thin film is relatively thin and then reduced.

Abstract: The present invention relates to a process and system for depositing a thin film onto a substrate. One aspect of the invention is depositing a thin film metal oxide layer using atomic layer deposition (ALD).

Abstract: The invention aims at reducing unevenness at the intersections of mutually crossing electrodes with a method of and an apparatus for forming electrodes on a substrate. After forming a number of finger electrodes on a substrate, wide bus electrodes intersecting them are formed by application of an application liquid. Upon applying the application liquid which contains an electrode material and a photo-curing resin to the substrate, the application liquid is irradiated with UV light after a predetermined time and the application liquid is thus made to harden. A time difference since applying until light irradiation is set based on the result of measurement on changes of the height of the application liquid experimentally applied.

Abstract: A high pressure processing system including a chamber configured to house a substrate. A fluid introduction system includes at least one composition supply system configured to supply a first composition and a second composition, and at least one fluid supply system configured to supply a fluid. The fluid supply system is configured to alternately and discontinuously introduce the first composition and the second composition to the chamber within the fluid.

Abstract: A method of manufacturing a semiconductor device and a substrate processing apparatus capable of providing a TiN film that is higher in quality than a TiN film formed by a conventional CVD method at a higher film-forming rate, that is, with a higher productivity than a TiN film formed by an ALD method.

Abstract: An apparatus and method use closed loop control processes to automatically adjust a command signal used to change an operating state of a fluid dispensing gun. Proportional, integral and/or derivative control processes are used to determine an operating parameter comprising on time compensation, off time compensation and/or a fluid pressure compensation. An adjustment is made to the operating parameter if a number of consecutive measurements of an adhesive bead characteristic are outside of a predetermined tolerance range. A sensor for producing a feedback signal is used to communicate a measurable difference between an actual and a desired bead characteristic. The feedback signal applied in real time is used when determining the operating parameter, reducing substrate waste and increasing efficiency.

Abstract: A substrate transfer system to reduce total processing time by transferring a substrate at a first delivery stage to a process block where processing can be carried out earliest. The substrate processing apparatus includes a first transfer device delivering a wafer with respect to a substrate carrier, and a second transfer device delivering a wafer between a plurality of process blocks and the first transfer device via a first delivery stage, to transfer the wafer with respect to the process blocks. The process block where there is no wafer or where processing of the last wafer within the relevant process block will be completed earliest is determined based on processing information of the wafers from the process blocks, and the wafer of the first delivery stage is transferred by the second transfer device to the relevant process block. This ensures smooth transfer of the wafer to the process block.

Abstract: Universal plasma unconfinement detection systems configured to detect the plasma unconfinement condition in the plasma processing chamber and methods therefor. The detection systems and methods are designed to reliably and accurately detect the existence of the plasma unconfinement condition in a process-independent and recipe-independent manner.

Abstract: A light irradiation device (151) includes a UV lamp (153), first and second optical filters (164, 165) which transmit and block wavelengths within different specific ranges, and a filter switching mechanism (162) which selectively interposes the first and second optical filters (164, 165) between the UV lamp (153) and an optical lens. The blocking wavelength of the first optical filter (164) is relatively longer than that of the second optical filter (165). The first optical filter (164) is interposed between the UV lamp (153) and the optical lens since the start of curing a coating solution until a lapse of a predetermined period of time. When the predetermined period of time has elapsed, the second optical filter (165) is interposed between the UV lamp (153) and the optical lens to replace the first optical filter (164).

Abstract: An indexer robot includes two transport arms. The indexer robot simultaneously transports two unprocessed substrates from a cassette to a substrate transfer part in such a manner that each of the two transport arms holds a single unprocessed substrate. Also, the indexer robot simultaneously receives two processed substrates from the substrate transfer part and simultaneously transports the two processed substrate to a cassette in such a manner that each of the two transport arms holds a single processed substrate. The provision of three sending substrate rest parts and three returning substrate rest parts in the substrate transfer part enables the indexer robot to smoothly accomplish the simultaneous two-substrate transport, thereby reducing the time required for the transport of substrates in an entire substrate processing apparatus.

Abstract: Described is a method for manufacturing a display including a substrate on which a structure, such as, for instance, a matrix structure in relief, is provided, which structure bounds a number of areas, wherein, with the aid of an inkjet printhead, substantially in each area an amount of liquid is deposited, wherein with the aid of at least one sensor a measurement is performed on the substrate to determine the position of a respective area, and on the basis of the thus determined position the printhead is controlled to deliver an amount of liquid at the correct place. Also described is an apparatus for carrying out the method, a substrate for use in the method and a display obtained with the method.

Abstract: A substrate processing method by which a desired thin film is formed on a substrate by alternately supplying and discharging a plurality of processing gases to and from a process chamber having a space for processing the substrate. In the substrate processing method, a quantity of a chemical species, which exists in the thin film and the film stress of the thin film depends on, is controlled by controlling a supply time of one processing gas among the processing gases, and thus the film stress of the thin film is controlled.

Abstract: Disclosed is a producing method of a semiconductor device including: loading at least one substrate into a processing chamber; forming a metal oxide film or a silicon oxide film on a surface of the substrate by repeatedly supplying a metal compound or a silicon compound, each of which is a first material, an oxide material which is a second material including an oxygen atom, and a hydride material which is a third material, into the processing chamber predetermined times; and unloading the substrate from the processing chamber.

Abstract: The present invention provides an ink discharging apparatus capable of forming a high-quality film. An ink discharging apparatus (1) includes: an ink discharge section (2) which is movable relative to a substrate in order to discharge ink onto plural defective pixels scattering on the substrate; and a discharge time interval calculating section (4) which calculates a discharge time interval from the previous ink discharge to the ink discharge of this time, in accordance with the order of ink discharge onto plural defective pixels. The ink discharge section (2) controls an amount of discharged droplets of ink or the number of discharged droplets, in accordance with the discharge time interval calculated by the discharge time interval calculating section (4).

Abstract: A coating process method in which a coating liquid is discharged onto the surface of a target substrate to be processed while rotating the target substrate so as to expand the coating liquid radially outward on the target substrate and, thus, to form a coated film comprises the step of detecting that the actual discharging of a coating liquid from a coating liquid discharging nozzle is started, and the step of controlling based on a signal of the detection at least one of the driving timing of a pump for allowing the coating liquid to be discharged from the coating liquid discharging nozzle, the operation timing of a valve mounted to a pipe for supplying the coating liquid into the coating liquid discharging nozzle, and the rotation starting or stopping timing of the target substrate.

Abstract: A coating apparatus includes a container and a perforated plate separating a plenum from a coating chamber. A gas supply system delivers a gas to the plenum in a sufficient amount for passage of the gas through the plate and suspension of a powder in a fluidized condition in the chamber. The gas supply system preferably includes a primary portion for continuously delivered gas and a controllable pulsing portion for supplementing the gas from the primary portion. In a first mode of operation, the gas from the pulsing portion is cycled to provide variation in the fluidized volume. In a second mode, the pulsing portion delivers relatively long pulses of gas to mix the fluidized powder.

Abstract: A method for configuring a plasma cluster tool is disclosed. The method includes generating a key file from option specifications, the key file encapsulating configuration restrictions specifically imposed on the plasma cluster tool. The method also includes generating at least one system-wide configuration file and at least one component-level configuration file using the key file. The method additionally includes generating run-time executable objects from a database of option definition files, the at least one system-wide configuration file and the at least one component-level configuration file. Furthermore, the method includes employing the run-time executable objects to configure the plasma cluster tool.

Abstract: ALD apparatuses and methods of depositing multiple layers employ a plurality of reaction spaces. The reaction chamber includes inlets configured to introduce reactant gases sufficient to achieve a first ALD process into a first set of the reaction spaces for a first period of time such that the reactant gases are not mixed one another. The ALD apparatus further includes a driver configured to move the substrates through all of the of reaction spaces in a plurality of cycles during the first period such that a first thin film is deposited by space-divided ALD on each of the substrates. Other inlets introduce reactant gases sufficient to achieve a second ALD process into a second set of the reaction spaces for a second period of time, while purge gas is fed to the first set of reaction spaces.

Abstract: A microdeposition system (20) and method deposits precise amounts of fluid material onto a substrate. A microdeposition head (50) includes a plurality of spaced nozzles. A positioning device controls a position of the microdeposition head relative to the substrate. A controller (22) includes a positioning module that communicates with the positioning device and that generates position control signals for the positioning device. A nozzle firing module communicates with the microdeposition head (50) and selectively generates nozzle firing commands to define features of at least one layer of an electrical device, such as resistors, traces and capacitors on a printed circuit board, polymer light emitting diodes, and light panels.

Abstract: A microdeposition system (20) and method deposits precise amounts of fluid material onto a substrate. A microdeposition head (50) includes a plurality of spaced nozzles that fire droplets having a deposited width when deposited on the substrate. A positioning device moves the microdeposition head (50) relative to the substrate at a head speed. A controller (22) generates over-clocking signals at a rate that is substantially greater than the head speed divided by the droplet width to improve resolution. The controller (22) includes a positioning module that generates position control signals for the positioning device. The controller (22) includes a nozzle firing module (114) that generates nozzle firing commands based on the over-clocking rate to fire the nozzles to form droplets that define features on the substrate.

Abstract: The purging of photoresist from a supply device of semiconductor coating equipment is automatically executed in a controlled manner. The equipment employs a plurality of photoresist bottles for storing the same kind of photoresist. A plurality of supply pipes are respectively connected to the photoresist bottles, respectively. A valve system selectively opens and closes the supply pipes in response to control signals generated by a main controller. A dispense pump forces the photoresist in the open supply pipe through a nozzle. A purge start button issues a purge start command signal to the controller when the button is pressed. The controller then controls the valve system and the dispense pump so as to automatically purge the photoresist according to a sequence effected using a timer.

Abstract: The present invention is a substrate treatment method in which a treatment by supplying a treatment solution from a nozzle to a substrate is successively performed for a plurality of substrates, which comprises the step of, during the performance of the successive treatments, performing between the treatments a plurality of pre-dispenses for different purposes of the treatment solution, wherein at least a recipe of the treatment solution to be pre-dispensed or a start condition of the pre-dispense is determined for each of the pre-dispenses. According to the present invention, the pre-dispense can be performed at a necessary and sufficient frequency to shorten the suspension time due to the pre-dispenses in the substrate treatment. This improves the throughput and reduces the number of pre-dispenses, resulting in reduced consumption of the treatment solution.

Abstract: A photoresist supply apparatus of semiconductor coating equipment fills a supply pipe with new photoresist when a used photoresist bottle is replaced. The photoresist supply apparatus includes first and second photoresist bottles, first and second gas supply pipes connected to the bottles, first and second solenoid valves disposed along the gas supply pipes, first and second purge start buttons, first and second photoresist supply pipes, first and second trap tanks to which the supply pipes are connected, a third photoresist supply pipe connected to the trap tanks, a nozzle connected to the third photoresist supply pipe, first and second level sensors disposed at an upper level of the trap tanks, third and fourth level sensors disposed at a lower level of the trap tank, first and second discharge pipes connected to the trap tanks, third and fourth solenoid valves disposed along the discharge pipes, first and second drain sensors associated with the discharge pipes, and a controller.

Abstract: The purging of photoresist from a supply device of semiconductor coating equipment is automatically executed in a controlled manner. The equipment employs a plurality of photoresist bottles for storing the same kind of photoresist. A plurality of supply pipes are respectively connected to the photoresist bottles, respectively. A valve system selectively opens and closes the supply pipes in response to control signals generated by a main controller. A dispense pump forces the photoresist in the open supply pipe through a nozzle. A purge start button issues a purge start command signal to the controller when the button is pressed. The controller then controls the valve system and the dispense pump so as to automatically purge the photoresist according to a sequence effected using a timer.

Abstract: An apparatus for operating a fluid dispensing gun to dispense a fluid onto a substrate moving relative to the dispensing gun. The apparatus has a sensor that produces a sensor feedback signal in response to the fluid dispensing gun changing operating states. A control is connected to the sensor and provides first signals causing the fluid dispensing gun to change operating states. The control has a detector producing a compensation signal representing a difference between the occurrences of one of said first signals and the sensor feedback signal. The control then adjusts a subsequent first signal in response to the compensation signal. Thus, the control automatically compensates the operation of the fluid dispensing gun in real time for changes in the switching time of the fluid dispensing gun required to change its operating states.

Abstract: A polyimide processing tool for coating polyimide on a semiconductor wafer is provided with a pause time monitoring means for monitoring the duration of the polyimide processing tool's wafer-transfer robot's pause time. The wafer-transfer robot transfers wafers from polyimide apply tool to polyimide cure bake oven and monitoring the duration of the pause helps prevent undesirably long pauses between polyimide apply of the uncured polyimide and the curing step.

Abstract: A mass transfer system offers the simultaneous transfer and time-saving efficiencies transfer techniques, while also offering the flexibility of prior-art free techniques. A mass transfer mechanism and an associated software control mechanism are equipped with the ability to retract a plurality of lifting arms (6), in a manner so select which of the processing stages (2) the lifting arms (6) will address for each transfer step, while omitting those steps for which transfer is not yet required.

Abstract: A coated film forming method is capable of readily forming a coated film of a thermoplastic material on a coated region of an inner peripheral surface of a cylinder. A nozzle, through which a molten paste of a thermoplastic material kept molten is discharged, is disposed toward an inner peripheral surface of a cylinder. The nozzle is moved along a rotational central line of the cylinder while rotating the cylinder and discharging the molten paste from the nozzle. Centrifugal force acting on the cylinder being rotated leads to spreading of the molten paste applied to the inner peripheral surface of the cylinder. Viscosity of the molten paste, a rotational speed of the cylinder and a speed of movement of the nozzle are set so as to keep the molten paste discharged from the nozzle from being scattered to a region other than the coated region.

Abstract: An apparatus for monitoring an operation of a fluid dispensing gun dispensing a pattern of fluid onto a substrate moving with respect to the dispensing gun. The dispensing gun changes operating states in response to transition signals. A sensor is disposed adjacent the substrate and provides feedback signals in response to detecting edges of the fluid dispensed onto the substrate. A diagnostic monitor is responsive to the transition and feedback signals and automatically measures delays between occurrences of the transition signals and detecting corresponding edges of the fluid deposited onto the substrate resulting from the transition signals. The delays are measured by correlating the feedback signals to the transition signals. A method for measuring the delays is also described and claimed.

Abstract: A method and apparatus is provided for more efficient application of photoresist to a wafer surface. One aspect of the method comprises applying solvent to the wafer and spinning it to coat the entire wafer surface prior to the application of photoresist. This reduces surface tension on the wafer and reduces the amount of resist required to achieve a high quality film. The apparatus comprises adding a third solenoid and nozzle to the coating unit to accommodate the application of solvent to the center of the wafer surface. The method also describes incorporating a new solvent comprising diacetone alcohol, which is a low-pressure solvent, providing extended process latitudes and reduced material expenditures.

Abstract: A coating apparatus for applying a coating liquid to a printing substrate. The apparatus includes a rotatable first roll, and a rotatable second roll positioned adjacent to the first roll and defining with the first roll a first nip through which the printing substrate passes. The apparatus also has a metering device for applying a layer of coating liquid onto the second roll, which in turn transfers the coating liquid to the printing substrate. The apparatus further has a controller that communicates with at least the second roll, wherein the controller performs the steps of determining whether the idle time of the second roll is longer than a predetermined threshold, setting a pre-spin flag if the idle time of the second roll is longer than a predetermined threshold, and directing the second roll to perform a pre-spin upon the presence of the pre-spin flag.

Abstract: Disclosed are an apparatus for and a process of atomic layer deposition using remote plasma. A thin film is deposited to a desired thickness on a wafer by use of the apparatus, which comprises a plurality of transfer pipes for individually transferring the first and the second reactive gas and the carrier gas to the vacuum chamber; an energy supplier, provided inside the transfer pipe for transferring the first and the second reactive gas, for supplying excitation energy to generate excited plasma to ionize the first reactive gas; and a valve controller, established in the transfer pipes, for alternately feeding into the vacuum chamber the second reactive gas and the first reactive gas ionized by the plasma excited in the energy supplier, at predetermined time intervals.

Abstract: The invention relates to a method and apparatus for growing a thin film onto a substrate, in which method a substrate placed in a reaction space (21) is subjected to alternately repeated surface reactions of at least two vapor-phase reactants for the purpose of forming a thin film. According to the method, said reactants are fed in the form of vapor-phase pulses repeatedly and alternately, each reactant separately from its own source, into said reaction space (21), and said vapor-phase reactants are brought to react with the surface of the substrate for the purpose of forming a solid-state thin film compound on said substrate. According to the invention, the gas volume of said reaction space is evacuated by means of a vacuum pump essentially totally between two successive vapor-phase reactant pulses.

Abstract: A vacuum coating installation has at least a central distribution station which can be evacuated and has a transport arrangement driven in a controlled manner essentially along a plane, for the material to be treated. One operating station for the distribution station as well as at least two processing stations for the material to be treated are provided. The three or more stations communicate by way of operating openings with the distribution station, through which openings the material to be treated can be transported from one station into the other by the transport arrangement for the material to be treated. The material to be treated is formed by individual workpiece holders of the installation, each having a plurality of workpiece supports.

Abstract: An apparatus for applying a material to a substrate. A material application station includes a shutter assembly having at least one horizontally extending blade which is rapidly displaceable from a closed configuration in which an outlet path of the shutter assembly is obstructed to an open configuration in which the outlet path is open. While the blade of the shutter assembly is in the closed configuration, a coating material is applied to a first predetermined area on an upper surface of the shutter assembly. A substrate is located beneath the shutter assembly in the outlet path. The blade of the shutter assembly is rapidly opened so that the coating material falls onto the substrate over a second predetermined area on an upper surface of the substrate. The second predetermined area is substantially equal to the first predetermined area. The resulting deposit is of a controlled diameter. A rapid opening of the blade allows the deposit to fall a short distance onto a substrate such as a pizza base.

Abstract: In a method and an apparatus for plating a plurality of kinds of works, an unattended route-free vehicle transports the works to a number of processing tanks to immerse the works in the processing tanks. A controller calculates a processing time of the processing tanks and a transporting time needed for the vehicle to transport the works to the processing tanks and renders the vehicle to transport one kind of the works during the immersion-processing of another kind of the works, thereby performing the plating process of a plurality of kinds of works one after another.

Abstract: An application method of adhesive for applying an adhesive by an application nozzle on an application object. Each application object is positioned in a direction intersecting the conveying direction by the move of each tables and the individual application heads corresponding to the tables are individually moved and positioned in the conveying direction, and the adhesive is applied simultaneously to necessary positions of the application objects by the application heads, so that the production efficiency of electronic circuit boards is enhanced in various aspects without increasing the size of the apparatus.