Abstract: Methods for tuning effective work functions of gate electrodes in semiconductor devices and semiconductor devices formed by the same are disclosed. In an embodiment, a semiconductor device includes a channel region over a semiconductor substrate; a gate dielectric layer over the channel region; and a gate electrode over the gate dielectric layer, the gate electrode including a first work function metal layer over the gate dielectric layer, the first work function metal layer including aluminum (Al); a first work function tuning layer over the first work function metal layer, the first work function tuning layer including aluminum tungsten (AlW); and a fill material over the first work function tuning layer.

Abstract: Methods and apparatus for vapor deposition of an organic film are configured to vaporize an organic reactant at a first temperature, transport the vapor to a reaction chamber housing a substrate, and maintain the substrate at a lower temperature than the vaporization temperature. Alternating contact of the substrate with the organic reactant and a second reactant in a sequential deposition sequence can result in bottom-up filling of voids and trenches with organic film in a manner otherwise difficult to achieve. Deposition reactors conducive to depositing organic films are provided.

Abstract: A method and system for forming a conformal silicon carbon nitride layer overlying a gap on a surface of a substrate are disclosed. Exemplary methods include forming conformal silicon carbon nitride material within the gap and treating the conformal silicon carbon nitride material to form treated silicon carbon nitride material. The deposition time is relatively short to mitigate flow of the conformal silicon carbon nitride material within the gap.

Abstract: An ultrasound sonotrode (101), the first end of which is adapted to be connected to a mechanical vibrations source, equipped with a working tip (105,205,405,805) at the opposite end of the sonotrode (101), equipped with a body (104) with a cooling jacket (103), sealed at the place of contact with the body (104) of the sonotrode (101) with the use of the first seal (106) and the second seal (107), characterized in that according to the invention the first seal (106) is placed at a distance less than or equal to 20 mm from the node of the standing wave excited in the sonotrode in the working conditions, and the second seal (107,207,407,507,607) is equipped with a resilient element (108,208,408,508,608) and is located at a distance less than or equal to 20 mm from the working tip (105,205,405,805).

Abstract: Methods of making negative electrode materials for an electrochemical cell that cycles lithium ions are provided. A surface of the electrode material formed of silicon, silicon-containing alloys, tin-containing alloys, or combinations thereof is treated with an oxidant at a first temperature of greater than or equal to about 100° C. to form a continuous intermediate layer comprising oxides. The method also includes pyrolyzing a carbon-containing precursor over the continuous intermediate layer at a second temperature of greater than or equal to about 600° C. to form a continuous carbon coating thereon. The intermediate layer oxides may be transformed to carbides. The continuous carbon coating comprises both graphitic carbon and amorphous carbon and may be a multilayered coating, where the inner layer predominantly includes amorphous carbon and the outer layer predominantly includes graphitic carbon.

Abstract: Deposition methods may prevent or reduce crystallization of silicon in a deposited amorphous silicon film that may occur after annealing at high temperatures. The crystallization of silicon may be prevented by doping the silicon with an element. The element may be boron, carbon, or phosphorous. Doping above a certain concentration for the element prevents substantial crystallization at high temperatures and for durations at or greater than 30 minutes. Methods and devices are described.

Abstract: A process for gas phase deposition of a metal or metal nitride film on a surface substrate comprises: reacting a metal-oxo or metal oxyhalide precursor with an oxophilic reagent in a reactor containing the substrate to deoxygenate the metal-oxo or metal oxyhalide precursor, and forming the metal or metal nitride film on the substrate through a vapor deposition process. The substrate is exposed to the metal oxyhalide precursor and the oxophilic reagent simultaneously or sequentially. The substrate is exposed to a reducing agent sequentially after deoxygenation.

Abstract: The present invention relates to a substrate processing method, and more particularly, to a processing method for substrate for removing impurities from inside a thin film of a substrate and improving characteristics of the thin film.

Abstract: There is provided a method of filling one or more recesses by providing the substrate in a reaction chamber; introducing a first reactant, to form first active species, for a first pulse time to the substrate; introducing a second reactant for a second pulse time to the substrate; and introducing a third reactant, to form second active species, for a third pulse time to the substrate. An apparatus for filling a recess is also disclosed and a structure formed using the method and/or apparatus is disclosed.

Abstract: A method includes forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) forming a first layer by supplying a precursor to the substrate; and (b) forming a second layer by supplying a reactant to the substrate and modifying the first layer. The (a) includes: (a-1) supplying the precursor to the substrate from a first supply part while supplying an inert gas at a first flow rate, and supplying an inert gas at a second flow rate from a second supply part; and (a-2) supplying the precursor to the substrate while supplying the inert gas at a third flow rate from the first supply part, or supplying the precursor from the first supply part while stopping the supply of the inert gas, and supplying the inert gas at a fourth flow rate from the second supply part.

Abstract: Methods for the formation of films comprising Si, C, O and N are provided. Certain methods involve sequential exposures of a hydroxide terminated substrate surface to a silicon precursor and an alcohol-amine to form a film with hydroxide terminations. Certain methods involved sequential exposures of hydroxide terminated substrate surface to a silicon precursor and a diamine to form a film with an amine terminated surface, followed by sequential exposures to a silicon precursor and a diol to form a film with a hydroxide terminated surface.

Abstract: A carrying device includes a swivel that swivels around a central axis line of a revolution orbit that passes through a workpiece transfer area and a workpiece work area for a workpiece to be worked on by a robot, multiple workpiece holders positioned on the swivel such that when a first one of the workpiece holders is positioned in the workpiece transfer area, a second one of the workpiece holders is positioned in the workpiece work area, a revolution driver that causes the swivel to swivel around the central axis line of the revolution orbit, and a tilting driver that tilts each of the workpiece holders with respect to the central axis line of the revolution orbit.

Abstract: To provide a vacuum pump suited for removal of a product deposited in a flow path of the vacuum pump, and a stator component, a discharge port, and control means that are used in the vacuum pump. A vacuum pump includes a flow path through which a gas is transferred from an inlet port toward an outlet port and removing means that removes a product deposited on an inner wall surface of the flow path. The removing means has injection holes with one ends opened at the inner wall surface of the flow path and injects the removing gas into the flow path through the injection holes.

Abstract: A method of manufacturing an article of footwear includes cutting a plurality of sipes into an outer surface of a pre-formed, foamed thermoplastic sole structure that has both an inner surface and an opposite outer surface. An adhesive is then applied to the inner surface of the pre-formed sole structure and the sole structure is heated to permit forming. The heated sole structure is positioned adjacent to a ground-facing surface of a lasted upper, and then is thermoformed against the lasted upper to draw the adhesive into contact with the ground-facing surface of the upper, and such that at least a portion of the pre-formed sole structure bends into contact with a sidewall of the upper.

Abstract: In one embodiment in which a technology which is capable of reducing voids that can occur when burying an insulating film into a trench while suppressing process complication, a method MT for processing a wafer W is provided. The wafer W has a groove 62 formed on the main surface 61 of the wafer W. The method MT includes: step S1 of accommodating the wafer W in a processing chamber 4 of a plasma processing apparatus 10; step S2 of starting supplying a first gas into the processing chamber 4; step S3 of starting supplying plasma generation high-frequency power into the processing chamber 4; and step S4 of starting intermittent supplying a second gas into the processing chamber 4 and starting supplying a third gas into the processing chamber 4 together, the first gas is a nitrogen-containing gas, the second gas is a gas that does not contain halogen, and the third gas is a gas that contains halogen.

Abstract: An air outlet device is disclosed herein. The air outlet device includes a plenum body portion, the plenum body portion defining an air chamber therein, the plenum body portion including an air inlet configured to be coupled to a supply air source for supplying air to the air chamber; an air nozzle portion fluidly coupled to the plenum body portion and including a nozzle inlet and an exit orifice, the air nozzle portion configured to discharge the air from the air chamber at a substantially uniform velocity through the exit orifice; and an air nozzle extension fluidly coupling the air chamber of the plenum body portion to the nozzle inlet of the air nozzle portion, the air nozzle extension being configured to increase an efficiency of the air outlet device by decreasing the pressure drop that occurs when the pressure energy of the air is converted to kinetic energy.

Abstract: A detergent dosing controller that is convenient to use and has better effect is disclosed herein. One side of the main passage is a water inlet (101), another side of the main passage is outlet (102) connecting to liquid inlet of washing bucket, and valves A(2), B(3), C(4), D(5), pump (6) and nozzle (7) are equipped. The inlet of valve A connects to the bypass orifice A(a) of the main passage, inlet of valve B connects to liquid storage tank of detergent A, outlets of valve A and valve B connect to inlet of valve C, inlet of valve D connects to liquid storage tank of detergent B, outlets of valve C and valve D connect to inlet of the pump, outlet of the pump connects to bypass orifice B(b) of the main passage, and for the relative location of bypass orifices A and B of main passage, bypass orifice A is relatively close to the inlet of main passage, bypass orifice B is relatively close to the outlet of main passage, the nozzle connects to main passage by concatenation and between bypass orifices A and B.

Abstract: Provided is a method of forming a silicon nitride film on a surface to be processed of a target object, which includes: repeating a first process a first predetermined number of times, the process including supplying a silicon source gas containing silicon toward the surface to be processed and supplying a decomposition accelerating gas containing a material for accelerating decomposition of the silicon source gas toward the surface to be processed; performing a second process of supplying a nitriding gas containing nitrogen toward the surface to be processed a second predetermine number of times; and performing one cycle a third predetermined number of times, the one cycle being a sequence including the repetition of the first process and the performance of the second process to form the silicon nitride film on the surface to be processed.

Abstract: A method for forming an organic monolayer includes supplying to an object an organic material gas including organic molecules, each molecule having a binding site that is to be chemically bonded to a surface of the object. The method further includes supplying excited hydrogen to the organic material gas before the organic material gas reaches the object to substitute an end of the binding site with hydrogen, and forming an organic monolayer by reaction between the end substituted with the hydrogen and the object.

Abstract: Provided is a substrate processing apparatus, which comprises a process chamber configured to process a substrate, a first plasma generation chamber in the process chamber, a first reactive gas supply unit configured to supply first reactive gas into the first plasma generation chamber, a pair of first discharge electrodes configured to generate plasma and to excite the first reactive gas, a first gas ejection port installed in a side wall of the first plasma generation chamber to eject an active species toward the substrate, a second plasma generation chamber in the process chamber, a second reactive gas supply unit configured to supply second reactive gas into the second plasma generation chamber, a pair of second discharge electrodes configured to generate plasma and to excite the second reactive gas, and a second gas ejection port installed in a side wall of the second plasma generation chamber to eject an active species.

Abstract: Provided is a method for injecting a dopant into a substrate to be processed. A method in one embodiment of the present invention includes: (a) a step for preparing, in a processing container, a substrate to be processed; and (b) a step for injecting a dopant into the substrate by supplying a doping gas containing AsH3, an inert gas, and H2 gas to the inside of the processing container, and applying plasma excitation energy to the inside of the processing container. In the step of injecting the dopant, the ratio of hydrogen partial pressure to the gas total pressure in the processing container is set within the range of 0.0015-0.003.

Abstract: Provided is an in-line type film forming apparatus including a processing chamber which is disposed to deviate from a closed path and is connected to a corner chamber, a first loading and unloading unit which unloads a substrate from a carrier and moves the substrate to the inside of the processing chamber, a second loading and unloading unit which unloads the substrate processed in the processing chamber and loads the substrate on the carrier, and a control device which performs control of driving the first and second loading and unloading units to unload the substrate from the carrier and to move the substrate to the inside of the processing chamber, and to take out the substrate processed in the processing chamber in advance from the processing chamber and to load the substrate on the carrier.

Abstract: A method of manufacturing a semiconductor device includes forming a thin film containing a specific element, oxygen, carbon, and nitrogen by performing a cycle a predetermined number of times. The cycle includes supplying a specific element-containing gas, supplying a carbon-containing gas, supplying an oxidizing gas, and supplying a nitriding gas. The act of supplying the nitriding gas is performed before the act of supplying the specific element-containing gas, and the act of supplying the carbon-containing gas and the act of supplying the oxidizing gas are not performed until the act of supplying the specific element-containing gas is performed.

Abstract: A method of forming an etching mask structure on an insulating film containing silicon and oxygen includes forming a first silicon film on the insulating film formed on a substrate, forming a reaction blocking layer on a surface layer of the first silicon film, forming a second silicon film on the reaction blocking layer; and forming a tungsten film by replacing silicon of the second silicon film with tungsten by supplying a process gas containing a tungsten compound onto the second silicon film.

Abstract: A film is formed on a substrate by performing a cycle at least twice, the cycle including a nucleus formation process for forming nuclei on the substrate and a nucleus growth suppression process for suppressing growth of the nuclei. A time required for the nucleus growth suppression process is less than or equal to a time required for the nucleus formation process. Alternatively, the nucleus formation process is further performed after the cycle is repeatedly performed a plurality of times.

Abstract: A system for processing a substrate include a processing chamber including a pedestal to support a substrate and a controller configured to a) supply precursor to the processing chamber; b) purge the processing chamber; c) perform radio frequency (RF) plasma activation; d) purge the processing chamber; and e) prior to purging the processing chamber in at least one of (b) or (d), set a vacuum pressure of the processing chamber to a first predetermined pressure that is less than a vacuum pressure during at least one of (a) or (c) for a first predetermined period.

Abstract: Provided is a method of manufacturing a semiconductor device capable of forming a nitride layer having high resistance to hydrogen fluoride at low temperatures. The method includes forming a nitride film on a substrate by performing a cycle a predetermined number of times, the cycle including supplying a source gas to the substrate, supplying a plasma-excited hydrogen-containing gas to the substrate, supplying a plasma-excited or thermally excited nitriding gas to the substrate, and supplying at least one of a plasma-excited nitrogen gas and a plasma-excited rare gas to the substrate.

Abstract: Provided is an apparatus for forming a silicon-containing thin film, the apparatus including a controller which is configured to control a process gas supplying mechanism, a heating device, and an exhauster to perform: forming a first seed layer on a base by adsorbing at least silicon included in an aminosilane-based gas on the base, using the aminosilane-based gas; forming a second seed layer on the first seed layer by depositing at least silicon included in a higher-order silane-based gas having an order that is equal to or higher than disilane, using the higher-order silane-based gas having an order that is equal to or higher than the disilane, wherein the first seed layer and the second seed layer form a dual seed layer; and forming the silicon-containing thin film on the dual seed layer.

Abstract: A powder coating system which is provided with a rotating stage which makes a metal cylindrical member rotate while holding its internal circumferential surface, a first booth which covers part of the metal cylindrical member which is held by the rotating stage, and a second booth which holds the first booth. A powder coating introduction nozzle which is provided with a filling port of powder coating and a plurality of powder coating spray ports is provided so that a filling port is positioned at the outside of the second booth and so that the plurality of spray ports can be changed in position in the first booth to face surface parts of the metal cylindrical member. The sprayed powder coating is collected inside the second booth by a flow of air from a blow device and is removed by being sucked up by a powder collector.

Abstract: A system for and method of delivering pulses of a desired mass of gas to a tool is described.

Abstract: Generation of byproducts is inhibited in a buffer space even in a single-wafer-type apparatus using the buffer space. A method of manufacturing a semiconductor device includes (a) loading a substrate into a process chamber; (b) supplying a first-element-containing gas via a buffer chamber of a shower head to the substrate placed in the process chamber; (c) supplying a second-element-containing gas to the substrate via the buffer chamber; and (d) performing an exhaust process between (b) and (c), wherein (d) includes: exhausting an atmosphere of the buffer chamber; and exhausting an atmosphere of the process chamber after exhausting the atmosphere of the buffer chamber.

Abstract: A substrate processing apparatus including a vertical reaction container; an insulating wall formed of an insulating material and including a reaction container accommodation chamber for accommodating the reaction container therein; a heater installed in an inner wall of the reception container reception chamber on the insulating wall; an air circulation channel installed vertically in a sidewall of the insulating wall; a blower for distributing air upward or downward in the air circulation channel; intake valves for communicating the air circulation channel with the air; and exhaust valves for communicating the air circulation channel with an equipment exhaust system. In a temperature elevating process and a temperature lowering process, the intake valves and the exhaust valves are switched.

Abstract: This invention provides a sputtering method which can generate an electric discharge under practical conditions and maintain the pressure in a plasma space uniform, and a sputtering apparatus used for the same. The sputtering method includes a first gas introduction step (step S403) of introducing a process gas from a first gas introduction port formed in a sputtering space defined by a deposition shield plate, a substrate holder, and the target which are disposed in a process chamber, a voltage application step (step S407) of applying a voltage to the target after the first gas introduction step, and a second gas introduction step (step S405) of introducing a process gas from a second gas introduction port formed outside the sputtering space.

Abstract: A method for depositing a film is provided. In the method, an object to be processed is accommodated in a process chamber, and an insulating film made of a polymer thin film is deposited on a surface of the object to be processed by supplying a first source gas composed of an acid anhydride and a second source gas composed of a diamine into the process chamber that is evacuated. Next, the insulating film is modified so as to have a barrier function by stopping the supply of the second source gas into the process chamber and continuously supplying the first source gas into the process chamber.

Abstract: A film forming method according to an embodiment includes: (a) a step of supplying a first precursor gas of a semiconductor material into a processing vessel in which a processing target substrate is disposed, the first precursor gas being adsorbed onto the processing target substrate during the step; (b) a step of supplying a second precursor gas of a dopant material into the processing vessel, the second precursor gas being adsorbed onto the processing target substrate during the step; and (c) a step of generating the plasma of a reaction gas in the processing vessel, a plasma treatment being performed during the step so as to modify a layer adsorbed onto the processing target substrate.

Abstract: In a method for repairing a component (40), in particular a turbine blade, the component (40) is positioned on a carrier (16) such that a repair site (42) of the component (40) faces away from the carrier (16). The component (40) is heated by means of a heating element (46) extending from the carrier (16) adjacent to the component (40). A raw material powder is applied onto the carrier (16) such that the component (40) is covered by the raw material powder. Electromagnetic or particle radiation is selectively irradiated onto the raw material powder applied onto the carrier (16) by means of an irradiation device (18) so as to produce a repair segment on the repair site (42) of the component (40) by an additive layer construction method.

Abstract: A plating method can improve adhesivity with a substrate. The plating method of performing a plating process on the substrate includes forming a vacuum-deposited layer 2A on the substrate 2 by performing a vacuum deposition process on the substrate 2; forming an adhesion layer 21 and a catalyst adsorption layer 22 on the vacuum-deposited layer 2A of the substrate 2; and forming a plating layer stacked body 23 having a first plating layer 23a and a second plating layer 23b which function as a barrier film on the catalyst adsorption layer 22 of the substrate 2. By forming the vacuum-deposited layer 2A, a surface of the substrate 2 can be smoothened, so that the vacuum-deposited layer 2A serving as an underlying layer can improve the adhesivity.

Abstract: A substrate processing apparatus comprising a substrate holding rotating mechanism, a process liquid supply mechanism having a nozzle for dispensing a process liquid toward a principal face of the substrate, a processing liquid reservoir for holding sufficient process liquid to form a liquid film covering the whole principal face of the substrate, a liquid film forming unit for forming the liquid film by supplying the process liquid onto the principal face of the substrate in a single burst, and a control unit for controlling the liquid film forming unit and the process liquid supply mechanism such that the process liquid is dispensed from the process liquid nozzle toward the principal face of the substrate after formation of the liquid film covering the whole area of the principal face of the substrate by the liquid film forming unit.

Abstract: Provided is a substrate processing apparatus, including: a first gas supply system to supply raw material gas of a film being deposited in at least a portion of the surface of the substrate, and first etching gas which removes the deposited film, from a first gas supply nozzle to the processing chamber; a second gas supply system to supply second etching gas, which removes the deposited film, from a second gas supply nozzle to the processing chamber; and a control device to control the first and second gas supply systems such that the raw material gas is supplied from the first gas supply nozzle and the second etching gas is supplied from the second gas supply nozzle while the substrate is in the processing chamber, and the first etching gas is supplied from the first gas supply nozzle while the substrate is not in the processing chamber.

Abstract: A depression filling method for filling a depression of a workpiece including a semiconductor substrate and an insulating film formed on the semiconductor substrate is provided. The depression penetrating the insulating film is configured so as to extend to the semiconductor substrate. The method includes: forming a thin film of a semiconductor material along a wall surface that defines the depression; annealing the workpiece to cause the semiconductor material of the thin film to move toward a bottom of the depression and to form an epitaxial region corresponding to crystals of the semiconductor substrate; and etching the thin film.

Abstract: A method of manufacturing a semiconductor device is provided, which enables the film quality to be improved when the film is formed on a substrate at a low temperature, thus forming fine patterns. The method of manufacturing a semiconductor device includes: forming the film on a substrate by alternately supplying at least a source gas and a reactive gas to the substrate while maintaining the substrate at a first temperature by heating; and modifying the film by supplying a modification gas excited by plasma to the substrate with the film formed thereon while naturally cooling the substrate with the film formed thereon to a second temperature without heating the substrate, the second temperature being lower than the first temperature.

Abstract: A film formation apparatus includes a gas supply mechanism for supplying an aminosilane-based gas, and a silane-based gas that does not include an amino group. Processes of forming a seed layer on a surface of the insulation film having the opening reaching the conductive substance and on a bottom surface of the opening by supplying the aminosilane-based gas into the process chamber, and forming a silicon film on the seed layer by supplying the silane-based gas that does not include the amino group into the process chamber, are sequentially performed in the process chamber.

Abstract: There is provided a method of cleaning an inside of a process chamber, which is formed by a reaction tube and a manifold configured to support the reaction tube and installed under a heater, after forming a stacked film of oxide and nitride films on a substrate in the process chamber by alternately performing forming the oxide film on the substrate and forming the nitride film thereon. The method includes supplying a hydrogen-free fluorine-based gas from a first nozzle, which is installed in the manifold to extend upward from the manifold to an inside of the reaction tube, to an inner wall of the reaction tube; and supplying a hydrogen fluoride gas from a second nozzle, which is installed in the manifold, to an inner wall of the manifold.

Abstract: In a film forming apparatus (10), plasma-assisted ALD sequences are carried out to form a nitride film on a substrate (W) through the nitration of the silicon (Si) resulting from dichlorosilane (DCS), and then the first to fourth gas-feeding processes and plasma-feeding processes are successively carried out as plasma-assisted post-treatment. The gas to be fed in the first to fourth gas-feeding processes in the plasma-assisted post-treatment is a modifier gas consisting of either a gas selected from among N2, NH3, Ar and H2 or a mixed gas obtained by suitably mixing some of these gases. After the completion of the plasma-assisted ALD sequences, a plasma formed from the modifier gas is fed onto the nitride film on the substrate (W) to improve the film quality of the nitride film.

Abstract: Each chemical processing section includes a chemical liquid bottle, a buffer tank, a pump, a filter, a discharge valve and a discharge nozzle. A chemical liquid stored in the chemical liquid bottle is led to the discharge nozzle and is discharged from the discharge nozzle to a substrate. A cleaning processing section includes a solvent bottle, a cleaning liquid bottle, the buffer tank and the pump. A solvent stored in the solvent bottle, a cleaning liquid stored in the cleaning liquid bottle and a gas supplied from a gas supply source are selectively led to the discharge nozzle in each chemical liquid processing section.

Abstract: A thin film having a low dielectric constant and a high resistance to HF at a low temperature range is formed with high productivity. A film containing a predetermined element, oxygen and at least one of carbon and nitrogen is formed on a substrate by performing, a predetermined number of times, a cycle comprising: (a) supplying a source gas containing the predetermined element to the substrate; and (b) supplying a reaction gas containing nitrogen, carbon and oxygen to the substrate.

Abstract: Disclosed is a liquid processing method which may de-electrify the surface of a hydrophobized substrate. A substrate electrified according to a liquid processing is de-electrified by supplying a hydrophobizing liquid to a surface of the substrate subjected to the liquid processing while rotating the substrate, and performing rinsing by supplying an alkaline rinsing liquid to the hydrophobized surface of the substrate.

Abstract: There is provided a substrate processing apparatus including: a process chamber configured to accommodate and process a plurality of substrates arranged with intervals therebetween; a first nozzle extending along a stacking direction of the substrates and configured to supply a hydrogen-containing gas into the process chamber; and a second nozzle extending along the stacking direction of the substrates and configured to supply an oxygen-containing gas into the process chamber, wherein the first nozzle includes a plurality of first gas supply holes disposed in a region extending from an upper portion to a lower portion of the first nozzle corresponding to a substrate arrangement region where the substrates are arranged, and the second nozzle includes a plurality of second gas supply holes disposed at an upper portion and a lower portion of the second nozzle to correspond to upper substrates and lower substrates of the substrates.

Abstract: According to one embodiment, a film formation apparatus is configured to coat a processing fluid on a surface of a substrate by supplying the fluid to the surface of the substrate from a nozzle while rotating the substrate and moving the nozzle and configured to form a film from the coated fluid by rotating the substrate. The apparatus includes: a holder configured to hold the substrate; a drive unit configured to rotate the holder; a processing fluid supply unit configured to supply the processing fluid onto the surface of the substrate held by the holder; and a controller configured to control at least the drive unit. The controller is configured to form the film from the coated processing fluid by rotating the holder at a second rotational speed, the second rotational speed being slower than a first rotational speed of the coating of the processing fluid.

Abstract: The present invention relates to a process and system for depositing a thin film onto a substrate. One aspect of the invention is depositing a thin film metal oxide layer using atomic layer deposition (ALD).