Abstract: An excellent type of a film is realized by modifying conventional types of films.

Abstract: An apparatus for processing a substrate includes a gas-atmosphere applying unit for applying gas atmosphere to the substrate, and a light-exposure unit for exposing the substrate to light through a lower surface of the substrate.

Abstract: According to an embodiment, a method for manufacturing a semiconductor device is disclosed. The method includes: arranging a semiconductor substrate on a first electrode out of first and second electrodes arranged to be opposed to each other in a vacuum container; applying negative first pulse voltage and radio-frequency voltage to the first electrode, the negative first pulse voltage being superimposed with the radio-frequency voltage; applying negative second pulse voltage to the second electrode in an off period of the first pulse voltage; and processing the semiconductor substrate or a member on the semiconductor substrate by plasma formed between the first and second electrodes.

Abstract: Disclosed is a substrate processing apparatus, including: a processing chamber for processing a substrate; a substrate rotating mechanism for rotating the substrate; a gas supply unit for supplying gas to the substrate, at least two kinds of gases A and B being alternately supplied a plurality of times to form a desired film on the substrate; and a controller for controlling a rotation period of the substrate or a gas supply period defined as a time period between an instant when the gas A is made to flow and an instant when the gas A is made to flow next time such that the rotation period and the gas supply period are not brought into synchronization with each other at least while the alternate gas supply is carried out predetermined times.

Abstract: A high pressure processing system including a chamber configured to house a substrate. A fluid introduction system includes at least one composition supply system configured to supply a first composition and a second composition, and at least one fluid supply system configured to supply a fluid. The fluid supply system is configured to alternately and discontinuously introduce the first composition and the second composition to the chamber within the fluid.

Abstract: The invention includes inserting an object to be processed into a processing vessel, which can be maintained vacuum, and making the processing vessel vacuum; performing a sequence of forming a ZrO2 film on a substrate by alternately supplying zirconium source and an oxidizer into the processing vessel for a plurality of times and a sequence of forming SiO2 film on the substrate by alternately supplying silicon source and an oxidizer into the processing vessel for one or more times, wherein the number of times of performing each of the sequences is adjusted such that Si concentration of the films is from about 1 atm % to about 4 atm %; and forming a zirconia-based film having a predetermined thickness by performing the film forming sequences for one or more cycles, wherein one cycle indicates that each of the ZrO2 film forming sequences and the SiO2 film forming sequences are repeated for the adjusted number of times of performances.

Abstract: A system and method are described for providing simultaneously conformal coating of a plurality of three dimensional objects using atomic layer deposition. The system comprises a dielectric tube adapted for maintaining the plurality of objects under vacuum and at least one inlet for providing a gaseous material in the dielectric tube. The dielectric tube used for comprising the objects is mounted rotatable so as to be able to rotate the plurality of objects under vacuum during atomic layer deposition of a coating on the plurality of objects.

Abstract: Embodiments of the present disclosure include semiconductor processing methods and systems. One method includes forming a material layer on a semiconductor substrate by exposing a deposition surface of the substrate to at least a first and a second reactant sequentially introduced into a reaction chamber having an associated process temperature. The method includes removing residual first reactant from the chamber after introduction of the first reactant, removing residual second reactant from the chamber after introduction of the second reactant, and establishing a temperature differential substantially between an edge of the substrate and a center of the substrate via a purge process.

Abstract: A barrier layer including a titanium film is formed at a low temperature, and a TiSix film is self-conformably formed at the interface between the titanium film and the base. In forming the TiSix film 507, the following steps are repeated without introducing argon gas: a first step of introducing a titanium compound gas into the processing chamber to adsorb the titanium compound gas onto the silicon surface of a silicon substrate 502; a second step of stopping introduction of the titanium compound gas into the processing chamber and removing the titanium compound gas remaining in the processing chamber; and a third step of generating plasma in the processing chamber while introducing hydrogen gas into the processing chamber to reduce the titanium compound gas adsorbed on the silicon surface and react it with the silicon in the silicon surface to form the TiSix film 507.

Abstract: In a first aspect, a first method is provided. The first method includes the steps of (1) preconditioning a process chamber with an aggressive plasma; (2) loading a substrate into the process chamber; and (3) performing plasma nitridation on the substrate within the process chamber. The process chamber is preconditioned using a plasma power that is at least 150% higher than a plasma power used during plasma nitridation of the substrate. Numerous other aspects are provided.

Abstract: A coating powder feed method, coating powder feeding device, electrostatic powder spraycoating apparatus containing such a coating powder feeding device. The invention includes a dense phase powder pump fitted with at least one feed chamber. A control signal to create a partial vacuum in the feed chamber is generated no earlier than simultaneously with, preferably by a predetermined delay time after, a control signal opening a powder intake valve of the feed chamber, as a result of which the beginning of partial vacuum buildup in the feed chamber shall take place no earlier than simultaneously with the initial opening of the powder intake valve or by a defined time delay after the opening of the powder intake valve.

Abstract: A substrate processing apparatus is provided with a reaction chamber (201), a substrate rotating mechanism (267) for rotating a wafer (200), and a gas supplying part for supplying the wafer (200) with gas. At least two types of gases A and B are alternately supplied a plurality of times, and a desired film is formed on the wafer (200). A control part (321) is provided to control a rotation cycle of the wafer (200) so as not to synchronize a gas supply cycle, which is prescribed by a period between a time when the gas A is flowed and a time when the gas A is flowed subsequently, with the rotation cycle of the wafer (200), at least for a time the alternate gas supply is performed prescribed times. The thickness uniformity of a film formed by an ALD method within the substrate plane is prevented from deteriorating.

Abstract: A reinforcing underlayment including dry uniform particles evenly applied to a wet bonding material layer on a surface of a substrate. The substrate, including the layers, is then cured to harden the one or more of the layers. A final coating or topcoat is applied to the cured surface of the substrate. The dry particles are evenly distributed onto the bonding material layer creating a uniform surface for subsequent coatings. The dry particles increase the strength of the liquid coatings increasing solid particle density within the coating system and thereby imparting properties not available for the liquid coatings. The present invention enables a user to easily introduce very heavy, dense, strong particles into a liquid coating and allows the user to apply very dense, heavy particles into and onto a wet bonding material layer followed by a subsequent wet topcoat layer which is cured as one contiguous material with reinforcement and underlayment strengthening coming from the added, dry particles.

Abstract: A method of manufacturing a semiconductor device including alternately repeating a process of forming a first metal oxide film including a first metal element and a process of forming a second metal oxide film including a second metal element on a substrate accommodated in a processing chamber, so as to form a third metal oxide film including the first and second metal elements with a predetermined composition ratio on the substrate. One of the first and second metal elements of the third metal oxide film has a concentration higher than a concentration of the other, and one of the first and second metal oxide films including the higher-concentration metal element is formed in a chemical vapor deposition (CVD) mode or an atomic layer deposition (ALD) saturation mode, and the other of the first and second metal oxide films is formed in an ALD unsaturation mode.

Abstract: A barrier layer including a titanium film is formed at a low temperature, and a TiSix film is self-conformably formed at the interface between the titanium film and the base. In forming the TiSix film 507, the following steps are repeated without introducing argon gas: a first step of introducing a titanium compound gas into the processing chamber to adsorb the titanium compound gas onto the silicon surface of a silicon substrate 502; a second step of stopping introduction of the titanium compound gas into the processing chamber and removing the titanium compound gas remaining in the processing chamber; and a third step of generating plasma in the processing chamber while introducing hydrogen gas into the processing chamber to reduce the titanium compound gas adsorbed on the silicon surface and react it with the silicon in the silicon surface to form the TiSix film 507.

Abstract: Oxidation of a metal film disposed under a high permittivity insulation film can be suppressed, and the productivity of a film-forming process can be improved. In a method of manufacturing a semiconductor device, a first high permittivity insulation film is formed on a substrate by alternately repeating a process of supplying a source into a processing chamber in which the substrate is accommodated and exhausting the source and a process of supplying a first oxidizing source into the processing chamber and exhausting the first oxidizing source; and a second high permittivity insulation film is formed on the first high permittivity insulation film by alternately repeating a process of supplying the source into the processing chamber and exhausting the source and a process of supplying a second oxidizing source different from the first oxidizing source into the processing chamber and exhausting the second oxidizing source.

Abstract: A carbon nanotube manufacturing method wherein a catalyst is heated in a reaction chamber while the reaction chamber is filled with argon gas containing hydrogen. When a predetermined temperature is reached in the reaction chamber, the reaction chamber is evacuated. Then a raw material gas as a carbon source is charged and sealed in the reaction chamber whereupon the synthesis of carbon nanotube begins. Subsequently, when a condition in which the synthesis of carbon nanotubes has proceeded to a predetermined level is detected, gases in the reaction chamber are exhausted. Then, the raw material gas is changed and sealed in the reaction tube again. Thereafter, the charging (synthesizing) operation and the exhausting operation are repeated until the carbon nanotube with a desired film thickness are synthesized.

Abstract: Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.

Abstract: Printed sheets are delivered from a printer to a coating machine which feeds the sheets successively to a coating nip formed between a coating cylinder and an impression cylinder. A transport mechanism advances the sheets through the coating nip. The arrival of each sheet is sensed, and a control unit determines a speed necessary for each sheet to be initially fed in order to reach the coating nip simultaneously with an image area of the coating cylinder and with grippers of the transport mechanism, as well as at a speed equal to a surface speed of the coating cylinder. Independently driven rollers advance each sheet at that sheet's determined speed (e.g., acceleration or deceleration).

Abstract: In a coating step, a substrate is rotated at a high speed, and in that state a resist solution is discharged from a first nozzle to a central portion of the substrate to apply the resist solution over the substrate. Subsequently, in a flattening step, the rotation of the substrate is decelerated and the substrate is rotated at a low speed to flatten the resist solution on the substrate. In this event, the discharge of the resist solution by the first nozzle in the coating step is performed until a middle of the flattening step, and when the discharge of the resist solution is finished in the flattening step, the first nozzle is moved to move a discharge position of the resist solution from the central portion of the substrate. According to the present invention, the resist solution can be applied uniformly within the substrate.

Abstract: A silicon nitride film including stoichiometrically excessive silicon with respect to nitrogen is formed. The silicon nitride film may be formed by supplying dichlorosilane to a substrate under a condition where CVD (chemical vapor deposition) reaction is caused to form a silicon film including several or less atomic layers on the substrate, supplying ammonia to the substrate in a non-plasma atmosphere to thermally nitride the silicon film under a condition where the nitriding reaction of the silicon film by the ammonia is not saturated, and alternately repeating the supplying of dichlorosilane and the supplying of ammonia.

Abstract: A method and apparatus are described for forming a structure on a substrate. The structure may be a circuit element. The method uses a digital specification 910 for forming the structure, including specifications for printing and curing. The structure is printed (step 112) using a drop-on-demand printer 400, wherein the printing dispenses at least one material on the substrate 420 according to the digital specification 910. The structure is cured (step 130) by irradiating the dispensed material from one or more electromagnetic radiation sources 520, 525 in the printer 400, wherein curing parameters are specified by the digital specification 910 to obtain a desired electrical property when the structure is a circuit element. The curing specification may specify the intensity of the irradiation and the location of irradiation points in the print region.

Abstract: An operating method is disclosed for a processing system that comprises multiple process modules each adapted to perform substantially the same process upon a substrate. During process module conditioning as a preparatory step for executing a required process recipe, each time one process module completes conditioning, successive transfer of unprocessed substrates from a cassette to the process module is started on an associated substrate transfer route, and successive processes that use the process module are started for the unprocessed substrates. The processing system can be operated efficiently, even if the nonuniformity of the conditioning time required exists between process modules of the same specifications.

Abstract: In the present invention, a gas flow restraining ring facing corner portions of the front face of a substrate horizontally held on a substrate holding unit and movable up and down, is set to a predetermined height in accordance with a coating treatment. Then, a coating solution containing a coating film forming component and a solvent is applied to the front face of the substrate and spread into a thin film state by a so-called spin coating method, and thereafter the substrate is rotated at a high speed so that the coating solution is dried. In this case, it is possible to control fresh gas flow from above the substrate to decrease the difference in evaporation rate of the solvent between the coating solution on the corner portions of the substrate and the coating solution inside them, thus enabling the coating treatment uniform within a plane on the substrate.

Abstract: The present invention includes: a first step of discharging a coating solution from a nozzle to a center portion of the substrate to apply the coating solution on a surface of the substrate while rotating the substrate; a second step of decelerating, after the first step, the rotation of the substrate and continuously rotating the substrate; and a third step of accelerating, after the second step, the rotation of the substrate to dry the coating solution on the substrate, wherein: the substrate is rotated at a fixed speed of a first speed immediately before the first step; and in the first step, the rotation of the substrate which is at the first speed before start of the first step is gradually accelerated after the start of the first step so as to make the speed continuously change, and the acceleration of the rotation of the substrate is gradually decreased so as to make the speed of the rotation of the substrate converge in a second speed higher than the first speed at end of the first step.

Abstract: The present invention provides a manufacturing method of a semiconductor device that has a rapid film formation rate and high productivity, and to provide a substrate processing apparatus.

Abstract: A method of processing semiconductor wafers is provided, comprising loading a batch of semiconductor wafers into a processing chamber; depositing titanium nitride (TiN) onto the wafers in the processing chamber; and depositing silicon onto the wafers in the processing chamber, without removing the wafers from the processing chamber between said depositing steps. In preferred embodiments, the TiN and silicon depositing steps are both conducted at temperatures within about 400-550° C., and at temperatures within 100° C. of one another.

Abstract: A substrate processing apparatus and a method for manufacturing a semiconductor device whereby foreign matter can be prevented from being adsorbed on the substrate, by suppressing agitation of foreign matter present in the processing chamber. The substrate processing apparatus comprises a processing chamber for processing a substrate; a processing gas feeding line for feeding a processing gas into the processing chamber; an inert gas feeding line for feeding an inert gas into the processing chamber; an inert gas vent line provided in the inert gas feeding line, for exhausting the inert gas fed into the inert gas feeding line without feeding the inert gas into the processing chamber; a first valve provided in the inert gas feeding line, on a downstream side of a part where the inert gas vent line is provided in the inert gas feeding line; a second valve provided in the inert gas vent line; and an exhaust line that exhausts an inside of the processing chamber.

Abstract: A substrate treating apparatus is provided with a treatment chamber, a holding member, a heating member, and supplying members for alternately supplying the treatment chamber with first and second reacting substances. The apparatus is provided for forming a thin film on a substrate by supplying the first reacting substance to have the first reacting substance adsorbed on the substrate, removing the excess first reacting substance, then, supplying the second reacting substance to have it adsorbed on the substrate, and reacting it with the first reacting substance. The apparatus is provided with a control part for permitting the apparatus to perform the thin film forming treatment in a status where the number of product substrates lacks, in the case where the number of sheets of the product substrates held by the holding member is less than the maximum number of the product substrates that can be held by the holding member.

Abstract: Disclosed is a substrate processing apparatus, including: a processing chamber for processing a substrate; a substrate rotating mechanism for rotating the substrate; a gas supply unit for supplying gas to the substrate, at least two kinds of gases A and B being alternately supplied a plurality of times to form a desired film on the substrate; and a controller for controlling a rotation period of the substrate or a gas supply period defined as a time period between an instant when the gas A is made to flow and an instant when the gas A is made to flow next time such that the rotation period and the gas supply period are not brought into synchronization with each other at least while the alternate gas supply is carried out predetermined times.

Abstract: A method and system is provided for determining and controlling the amount of film precursor vapor delivered to a substrate in a vapor deposition system, while maintaining a desired concentration of film precursor vapor within a carrier gas utilized to transport the film precursor vapor. The vapor deposition system comprises a vapor delivery system comprising a carrier gas supply system configured to supply a first flow of carrier gas that passes through a precursor evaporation system to entrain film precursor vapor and to supply a second flow of carrier gas that by-passes the precursor evaporation system. The vapor delivery system comprises a carrier gas flow control system to control the amount of the first flow of the carrier gas and control the amount of the second flow of the carrier gas. Additionally, the vapor delivery system comprises a film precursor vapor flow measurement system configured to measure an amount of the film precursor vapor introduced to the first flow of the carrier gas.

Abstract: To improve a step coverage and a loading effect, without inviting a deterioration of throughput and an increase of cost, in a method for forming a thin film by alternately flowing a raw material and alcohol to a processing chamber.

Abstract: ALD apparatuses and methods of depositing multiple layers employ a plurality of reaction spaces. The reaction chamber includes inlets configured to introduce reactant gases sufficient to achieve a first ALD process into a first set of the reaction spaces for a first period of time such that the reactant gases are not mixed one another. The ALD apparatus further includes a driver configured to move the substrates through all of the of reaction spaces in a plurality of cycles during the first period such that a first thin film is deposited by space-divided ALD on each of the substrates. Other inlets introduce reactant gases sufficient to achieve a second ALD process into a second set of the reaction spaces for a second period of time, while purge gas is fed to the first set of reaction spaces.

Abstract: Wafers A1 to A10 of a first lot A and wafers B1 to B10 of a second lot B are processed by a second heating unit at different temperatures, respectively. A wafer W is carried in a processing block included in coating and developing system along a route passing a temperature control unit CPL2, a coating unit BCT, a heating unit LHP2, a temperature control unit CPL3, a coating unit COT, a heating unit LHP3, and a cooling unit COL in that order. The process temperature of the heating unit LHP3 is changed after the last wafer A10 of the first lot A has been processed by the heating unit LHP3.

Abstract: A layer of reduced stress is formed on a substrate using an HDP-CVD system by delaying or interrupting the application of capacitively coupled RF energy. The layer is formed by introducing a process gas into the HDP system chamber and forming a plasma from the process gas by the application of RF power to an inductive coil. After a selected period, a second layer of the film is deposited by maintaining the inductively-coupled plasma and biasing the plasma toward the substrate to enhance the sputtering effect of the plasma. In a preferred embodiment, the deposited film is a silicon oxide film, and biasing is performed by application of capacitively coupled RF power from RF generators to a ceiling plate electrode and wafer support electrode.

Abstract: The invention device measures the instantaneous rotation speed of a turbine (6) which is housed inside the body (3) of the paint sprayer (2) and which rotationally drives the rotating bowl (5) when the paint sprayer is mounted on the end of an arm (8) of a robot or an analogous multi-axis machine. A disk (10), which is disposed to the rear of the turbine (6) and which rotates therewith, cooperates with the front end (11a) of an optical-fiber-type light guide (11) which is interrupted (11b) at the rear (7) of the body (3) of the paint sprayer (2). Transmitting and receiving optoelectronic means are mounted on the end of the arm on the mounting plane (9) of the paint sprayer, opposite the rear end (11b) of the light guide (11). Said means convert a reflected optical signal which is carried by the optical guide (11) into an electronic signal which is carried by an electric cable (22) placed in the arm (8). The inventive device is suitable for use with machines on automatic painting lines for automotive vehicles.

Abstract: The present invention is a substrate treatment method in which a treatment by supplying a treatment solution from a nozzle to a substrate is successively performed for a plurality of substrates, which comprises the step of, during the performance of the successive treatments, performing between the treatments a plurality of pre-dispenses for different purposes of the treatment solution, wherein at least a recipe of the treatment solution to be pre-dispensed or a start condition of the pre-dispense is determined for each of the pre-dispenses. According to the present invention, the pre-dispense can be performed at a necessary and sufficient frequency to shorten the suspension time due to the pre-dispenses in the substrate treatment. This improves the throughput and reduces the number of pre-dispenses, resulting in reduced consumption of the treatment solution.

Abstract: The machine is an index spraying machine. The machine has five different stations. The first station is the load/unload station. At this station, work pieces are unloaded after they have been sprayed and new work pieces to be sprayed are loaded on. New pieces then move into the pre-heat station tunnel. A third station is the spraying area. In this area, the work pieces are sprayed. After being sprayed, the work pieces move in the area where they are heated to flash off the volatile fumes. Then they move to the fifth work station where they are cooled and finally they move back into the load/unload station. The spraying area in this machine is sealed to meet NEMA 7 standards. The air capture system cascades the air, thus lowering the air volume that passes through the thermal oxidizer.

Abstract: An apparatus and a method for applying a fluid, which enable an application amount of the fluid to be stabilized even at the start of fluid discharge and at the end of the fluid discharge. The apparatus includes an application head and a control unit, whereby operational control is carried out so that a discharge member is rotated and moved in a discharge direction along an axial direction of the discharge member when the fluid is to be discharged, while the rotation of the discharge member is stopped and the discharge member is moved in a direction opposite to the discharge direction when the discharge is to be stopped. The application amount of the fluid to be applied can be stabilized even at the start of fluid discharge and at the end of the fluid discharge.

Abstract: A method and apparatus is provided for more efficient application of photoresist to a wafer surface. One aspect of the method comprises applying solvent to the wafer and spinning it to coat the entire wafer surface prior to the application of photoresist. This reduces surface tension on the wafer and reduces the amount of resist required to achieve a high quality film. The apparatus comprises adding a third solenoid and nozzle to the coating unit to accommodate the application of solvent to the center of the wafer surface. The method also describes incorporating a new solvent comprising diacetone alcohol, which is a low-pressure solvent, providing extended process latitudes and reduced material expenditures.

Abstract: A coating apparatus for applying a coating liquid to a printing substrate. The apparatus includes a rotatable first roll, and a rotatable second roll positioned adjacent to the first roll and defining with the first roll a first nip through which the printing substrate passes. The apparatus also has a metering device for applying a layer of coating liquid onto the second roll, which in turn transfers the coating liquid to the printing substrate. The apparatus further has a controller that communicates with at least the second roll, wherein the controller performs the steps of determining whether the idle time of the second roll is longer than a predetermined threshold, setting a pre-spin flag if the idle time of the second roll is longer than a predetermined threshold, and directing the second roll to perform a pre-spin upon the presence of the pre-spin flag.

Abstract: The present invention provides a work station and method for applying a blocking material such as pitch or the like to a selected location on a workpiece or workpieces, wherein the work station includes an automated blocking material dispenser, an X-Y stage for positioning the workpiece(s) and a microprocessor, and wherein the method includes the synchronized operation of the X-Y stage and the dispenser under control of the microprocessor to deposit a selected amount and shape of the blocking material in a selected location or locations on a workpiece or workpieces with a high degree of repeatability in a short cycle time.

Abstract: An upper processing section 10 is provided by evenly spacing out functional stations 13 having respective functions of steps constituting a fluidized bed granulation coating process, on circumferential points. An intermediate storing section 20 is provided under the upper processing section 10 by evenly spacing out powder grain storing vessels 22 corresponding to the plurality of functional stations 13, on circumferential points. A lower gas supply section 30 is provided under the intermediate storing section 20 by evenly spacing out gas supply stations 31 corresponding to the plurality of powder grain storing vessels 22. The powder grain storing vessels 22 storing powder grains sequentially proceed to the respective functional stations 13 to execute respective processes to the powder grains, and thereby granulation coating of the powder grains is performed in a batch type and a continuous type.

Abstract: An upper side of a cup provided around a wafer is formed in a rectangular shape and a lower side thereof is formed in a cylindrical shape. The cup is formed such that, when seen from above, the portion forming the cylindrical shape is positioned within the portion forming the rectangular shape. The cup has a raising and lowering mechanism and is controlled by a control section. The upper side of the cup is placed by the side of the wafer during a scan by a supply nozzle. The lower side of the cup is placed over an upper level and a lower level of the wafer while a rinse liquid and a developing solution are shaken off. The scan by the supply nozzle is performed with the supply nozzle positioned in the upper cup portion.

Abstract: Methods and apparatuses of forming a film on a substrate including introducing a pretreatment material into a processing chamber sufficient to form a film as a portion of an inner surface of the processing chamber to inhibit outgassing from that portion of the chamber, introducing a substrate into the chamber, and forming a film on the substrate.

Abstract: An apparatus for applying a coating solution to a surface of a substrate to form a coating film of desired thickness thereon. The apparatus includes a rotary supporting device for supporting and spinning the substrate in horizontal posture, a solvent spraying device for spraying a solvent to the substrate, a coating solution supplying device for supplying the coating solution to the substrate, a storage device for storing a processing program stipulating varied points and periods of time, a timer acting as a reference for each point or period of time stored in the storage, and a controller operable to perform controls based on the points and periods of time and with reference to the timer.

Abstract: The present invention provides systems, methods and apparatus for high temperature (at least about 500-800° C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.

Abstract: This invention relates to a device for spraying coating material, which comprises a barrel inside which is defined a conduit for circulation of coating material, and a nozzle for shaping the jet of material intended to be mounted on this barrel. Magnetic coupling means are provided between the nozzle and the barrel. These means which are insulated from the conduit, may be formed by one or more magnets associated with a metallic ring. This allows easy and rapid assembly and dismantling of the nozzle on the end of the barrel.

Abstract: A dual track stencil system includes a first set of rails and a second set of rails, each of the rails being independently controlled for allowing for independent movement of circuit boards through the stencil system for processing. The stencil system includes a working area, at which the circuit boards are stenciled. A stencil, having two patterns, each aligned with a respective working area of each track is suspended above the dual track system. In one embodiment, a solder dispensing unit including a squeegee arm is suspended above the stencil, parallel to and centered between the two tracks. During operation, a circuit board enters the working area, is raised to engage with the stencil, and the squeegee arm traverses that portion of the stencil pattern currently engaging the board, thereby dispensing solder through the pattern and stenciling the board. The stencil system operates to process two boards on one track before advancing to the second track for processing another pair of boards.

Abstract: A spray dampening device for a printing apparatus, the spray dampening device comprising a plurality of spray nozzles. The spray nozzles are each cycled at a predetermined frequency and at an individual nozzle phase shift with the individual phase shifts being synchronized so that an effective frequency of spray bursts applied to target surface of the printing apparatus is greater than the predetermined frequency. Dampening system performance may be improved without the implementation of new individual nozzle technology. The benefits of a pulsed dampener system are maintained while system performance approaches that of a continuous dampener.