With Nozzle-shaped Anode (i.e., Dc Spray Gun) Patents (Class 118/723DC)
-
Patent number: 6077388Abstract: A system and method for performing plasma etch on a spherical shaped device is disclosed. The system includes a processing tube for providing a reactive chamber for the spherical shaped substrate and a plasma jet is located adjacent to the processing tube. The plasma jet includes a pair of electrodes, such as a central cathode and a surrounding anode, for producing a plasma flame directed towards the reactive chamber. The central cathode may, for example, be powered by a radio frequency power source. As a result, the reactive chamber supports non-contact etching of the spherical shaped substrate by the plasma flame.Type: GrantFiled: July 8, 1999Date of Patent: June 20, 2000Assignee: Ball Semiconductor, Inc.Inventor: Alex Freeman
-
Patent number: 5891312Abstract: A process for forming a thin metal coating on a substrate wherein a gas stream heated by an electrical current impinges on a metallic target in a vacuum chamber to form a molten pool of the metal and then vaporize a portion of the pool, with the source of the heated gas stream being on one side of the target and the substrate being on the other side of the target such that most of the metallic vapor from the target is directed at the substrate.Type: GrantFiled: December 24, 1996Date of Patent: April 6, 1999Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space AdministrationInventors: Jack L. Weeks, Douglas M. Todd
-
Patent number: 5846330Abstract: A gas injection disc is provided which includes an outer ring and a tubular modular insert which slips into the outer ring. The outer ring is provided with an inner bore, a ring-shaped plenum located around the inner bore, an outer gas sealing surface around the plenum, and two gas feed paths extending from the periphery of the outer ring to the plenum. The gas feed paths are each provided with a gas feed attachment for coupling gas supply tubes thereto. The insert is provided with a plurality of radially aligned injectant holes, an inner gas sealing surface, and an axial bore. The insert is seated in the inner bore of the outer ring such that the inner and outer gas sealing surface face each other with a small gap provided therebetween which enables the insertion of the insert into the inner bore. The insert thereby substantially encloses the plenum, and the injectant holes are aligned with the plenum to receive injectant gases and direct the injectant gases into the axial bore of the insert.Type: GrantFiled: June 26, 1997Date of Patent: December 8, 1998Assignee: Celestech, Inc.Inventors: George Quirk, Daniel V. Raney, Michael Scott Heuser, C. B. Shepard, Jr.
-
Patent number: 5753045Abstract: A process provides for the reactive treatment of workpieces in which a plasma beam is produced in an evacuated recipient. With respect to the area of the highest plasma density along the beam axis, workpieces are arranged in a radially offset manner. Fresh reactive gas is charged into the recipient and used-up gas is sucked out of the recipient. A vacuum treatment system comprises a plasma beam production arrangement, a gas inlet operatively connected with a reactive gas supply, an axially extending workpiece carrier arrangement radially set off from an axis of a plasma beam produced by the plasma beam production arrangement. The workpiece carrier arrangement mounts a rotational surface coaxial with respect to the axis of the plasma beam and a gas suction system. The process and system are used to deposit metastable layers, including cBN-layers, .alpha.-Al.sub.2 O.sub.3 layers, C.sub.3 N.sub.Type: GrantFiled: July 10, 1995Date of Patent: May 19, 1998Assignee: Balzers AktiengesellschaftInventors: Johann Karner, Mauro Pedrazzini, Erich Bergmann
-
Patent number: 5679167Abstract: A plasma system forms a dense, uniform coating of metallic oxide or other material on a relatively large substrate of metal foil or other composition located a substantial distance from the plasma gun so that the plasma stream covers the entire width of the substrate. A large pressure differential between the pressure inside the plasma gun and the ambient pressure outside of the plasma gun creates a shock pattern within the exiting plasma-stream so as to disperse the plasma stream and maintain a high energy level therein, as well as thoroughly mixing a coating material introduced into the plasma stream within the gun. Mixing of the coating material within the plasma stream is further enhanced by introducing the coating material into the plasma stream in the form of very small particles. In one arrangement, the plasma stream is delivered in a long, narrow configuration across the width of the substrate by a nozzle with a slit-like opening at the lower end of the plasma gun.Type: GrantFiled: August 18, 1994Date of Patent: October 21, 1997Assignee: Sulzer Metco AGInventor: Erich Muehlberger
-
Patent number: 5679159Abstract: A mandrel for use in an arc-jet spinning diamond deposition process for coating cutting tool inserts is disclosed. The mandrel has a plurality of cutouts or wells for receiving cutting tool inserts. The receiving wells are machined or otherwise provided to have the same contour as the cutting tool inserts that are placed in the wells. The receiving wells may all have an identical geometry, or different geometries. In one embodiment, the mandrel comprises a single element with the receiving wells machined into the upper surface of the mandrel. In another embodiment, the mandrel comprises a separate upper plate with the receiving wells cut through the plate to form a grid, and a lower base plate which is attached to the upper plate. An intermediate layer of a low melting metal foil may be placed between the grid and base plate to aid adhesion and to provide an interface of high thermal conductivity.Type: GrantFiled: June 7, 1995Date of Patent: October 21, 1997Assignee: Saint-Gobain/Norton Industrial Ceramics CorporationInventor: James M. Olson
-
Patent number: 5580386Abstract: A substrate surface is coated with a permeation barrier of inorganic material, which is vaporised from a crucible in a vacuum chamber evacuated to at least 10.sup.-3 mbar and precipitated on the substrate surface. An ionizing electron beam of low energy is thus passed through the gas phase of inorganic material with formation of a plasma, preferably in the direction running approximately parallel to the substrate surface. At least one low voltage electron beam gun with assigned electrode is incorporated in the vacuum chamber between the crucible and the substrate support. The main application is for coating plastic films for the packaging industry.Type: GrantFiled: February 2, 1995Date of Patent: December 3, 1996Assignee: Alusuisse-Lonza Services Ltd.Inventor: Wolfgang Lohwasser
-
Patent number: 5565249Abstract: A process for gas phase synthesis of diamond using a DC plasma jet where a plasma jet generated by DC arc discharge using a DC plasma torch is made to strike a substrate and grow diamond on the substrate, wherein use is made of a plurality of plasma torch anodes, these are arranged coaxially in a telescoped structure, a magnetic field is applied to these in accordance with need to cause the arc to rotate or the electrode is rotated so as to perform gas phase synthesis of diamond.Type: GrantFiled: May 7, 1993Date of Patent: October 15, 1996Assignee: Fujitsu LimitedInventors: Kazuaki Kurihara, Kenichi Sasaki, Tsukasa Itani, Motonobu Kawarada
-
Patent number: 5560779Abstract: There is provided a system for the manufacture of a diamond film. A plasma generator generates a hydrogen atom containing plasma stream into which a hydrocarbon containing gas is fed. The plasma dissociates the hydrocarbon to carbon radicals and carbon which are deposited on a substrate where the carbon crystallizes to a diamond film. The efficiency of the system is increased by heating the hydrogen source gas prior to generation of the plasma. Other means to increase the effectiveness of the system include using a plurality of plasma streams and shaping the plasma stream, A low internal strain, high quality optical film is generated by depositing the carbon on a substrate supported by a heat sink having nonuniform thermal conductivity such that the thermal gradient across the surface of the heat sink is less than about 8.degree. C./centimeter.Type: GrantFiled: July 12, 1993Date of Patent: October 1, 1996Assignee: Olin CorporationInventors: Steven C. Knowles, Alan E. Kull, George W. Butler, David O. King
-
Patent number: 5529633Abstract: An apparatus for depositing a substance includes a rotating mandrel assembly with a mandrel having a deposition surface exposed to the vapor so that the substance is deposited on the deposition surface and having a base having a plurality of radiator fins extending therefrom. A plurality of receptor fins interleave with the radiator fins and provide heat exchange to the receptor fins to cool the mandrel during deposition of the substance on the deposition surface of the mandrel.Type: GrantFiled: May 11, 1995Date of Patent: June 25, 1996Assignee: Saint-Gobain/Norton Industrial Ceramics CorporationInventors: Dan O. Enniss, Matthew Simpson
-
Patent number: 5468295Abstract: A method of thermal spray coating a surface with a metal coating material includes the provision of a nozzle about a thermal spray coating apparatus, such as a two wire electric-arc apparatus. The nozzle includes a plurality of ports facing generally radially inwardly towards a coating material particle stream, such as an atomized molten metal stream of a two-wire arc thermal spray apparatus. The ports sequentially receive a deflecting gas flow, such that the direction moves circumferentially about the axis of the particle stream. The deflecting gas entrains the coating material and carries it radially to the surface of the part to be coated or the nozzle assembly. By utilizing a plurality of valve ports, one simplifies the assembly over prior art systems which have rotated the part to be coated. In one embodiment of this invention, a valve disk selectively communicates a compressed gas to the ports sequentially.Type: GrantFiled: December 17, 1993Date of Patent: November 21, 1995Assignee: Flame-Spray Industries, Inc.Inventors: Daniel R. Marantz, Keith A. Kowalsky
-
Patent number: 5435849Abstract: The substrate in a plasma jet deposition system is provided with structural attributes, such as apertures and/or grooves, that facilitate efficient deposition. Groups of substrates are arranged with respect to the plasma beam in a manner which also facilitates efficient deposition. In addition to increasing the portion of the plasma beam volume which contacts the substrate surface or surfaces, it is advantageous to provide for the efficient evacuation of spent fluids away from the substrate so that fresh plasma containing the operative species can easily and continuously contact the substrate surface.Type: GrantFiled: January 13, 1993Date of Patent: July 25, 1995Assignee: Celestech, Inc.Inventors: Gordon L. Cann, Cecil B. Shepard, Jr., Frank X. McKevitt
-
Patent number: 5403399Abstract: An apparatus for a vapor deposition of diamond by:effecting an arc discharge while feeding a discharge gas between an anode and a cathode of a thermal plasma chemical vapor deposition device;radicalizing a gaseous carbon compound by feeding the gaseous carbon compound to a generated plasma jet; andpermitting said radicalized plasma jet to impinge on a substrate to be treated, whereby a film of diamond is formed on said substrate.Type: GrantFiled: June 29, 1992Date of Patent: April 4, 1995Assignee: Fujitsu LimitedInventors: Kazuaki Kurihara, Kenichi Sasaki, Motonobu Kawarada, Nagaaki Koshino
-
Patent number: 5382293Abstract: An apparatus for depositing a diamond film on a substrate includes a first electrode formed as an enclosed body having a nozzle for jetting thermal plasma opening therefrom and a second electrode of opposite polarity positioned in the nozzle. The apparatus additionally includes a power source for applying a direct current voltage between the electrodes. A gas is fed between the electrodes as a direct current voltage is applied thereto, whereby the gas is formed into a thermal plasma which is jetted through the nozzle. A starting gas feed system is included for feeding gaseous starting compounds for vapor phase deposition to the plasma jet and a powder supplying pipe is provided for feeding a metal powder between the electrodes.Type: GrantFiled: July 28, 1993Date of Patent: January 17, 1995Assignee: Fujitsu LimitedInventors: Motonobu Kawarada, Kazuaki Kurihara, Ken-ichi Sasaki, Akitomo Teshima, Nagaaki Koshino
-
Patent number: 5328516Abstract: The plasma gun assembly of the invention is particularly suitable for coating the inner surfaces of narrow cavities, bores, channels or the like. It essentially comprises a plasma gun head member, a plasma gun shaft member and a connector member. These three units are designed as replaceable modules which can be replaced by the operator of the plasma gun assembly quickly and easily. The plasma gun head member is connected to the plasma gun shaft member by means of only two screws, and the connector member is connected to the plasma gun shaft member by means of only three screws. All channels, conductors and conduits for supplying the media and the electric energy required for the operation of the plasma gun assembly are running in the interior of the plasma gun shaft assembly.Type: GrantFiled: August 13, 1993Date of Patent: July 12, 1994Assignee: Plasma-Technik AGInventor: Markus Dietiker
-
Patent number: 5314540Abstract: Apparatus and process for synthesizing a diamond film of high purity at a high rate. Mixture gas of hydrocarbon gas and hydrogen gas is introduced into an arc discharge to produce a gas plasma. This gas plasma is blown against a substrate to deposit diamond. A plasma current power supply is connected with a third electrode disposed above the substrate to place the third electrode at a positive potential. An electrical current is supplied into the gas plasma from the third electrode. Flow of the electrical current through the plasma promotes the decomposition of the hydrogen and hydrocarbon. A diamond film of high purity can be deposited at a high rate. The invention is characterized in that the substrate is placed at a lower potential than the third electrode or the direction of the electrical current intersects the flow of the gas plasma although the electrical current is passed through the plasma. Therefore, it is unlikely that the accelerated electrons reach the substrate, elevating its temperature.Type: GrantFiled: March 23, 1992Date of Patent: May 24, 1994Assignee: Nippondenso Co., Ltd.Inventors: Satoshi Nakamura, Minoru Yamamoto, Nobuei Ito, Tadasi Hattori
-
Patent number: RE34806Abstract: Embodiments of magnetoplasmadynamic processors are disclosed which utilize specially designed cathode-buffer, anodeionizer and vacuum-insulator/isolator structures to transform a working fluid into a beam of fully ionized plasma. The beam is controlled both in its size and direction by a series of magnets which are mounted in surrounding relation to the cathode, anode, vacuum insulator/isolators and plasma beam path. As disclosed, the processor may be utilized in many diverse applications including the separation of ions of differing weights and/or ionization potentials and the deposition of any ionizable pure material. Several other applications of the processor are disclosed.Type: GrantFiled: May 4, 1992Date of Patent: December 13, 1994Assignee: Celestech, Inc.Inventor: Gordon L. Cann