Abstract: The processing chamber of an etching apparatus is divided into a plasma generating space and a processing space by a grid electrode. A first feed gas is supplied from a gas source unit to the plasma generating space through a first flow control valve mechanism and a first gas supply line. A second feed gas is supplied from the gas source unit to the processing space through a second flow control valve mechanism and a second gas supply line. The interior of the processing chamber is evacuated by an exhaust pump through an exhaust line connected to the processing space. Each of the first and second flow control valve mechanisms has a plurality of valves whose opening degrees are separately controlled by a CPU.

Abstract: A substrate processing system that includes a deposition chamber having a reaction zone, first and second electrodes, a mixed frequency RF power supply including a low frequency RF power source and a high frequency RF power source. The high frequency RF power supply provides enough power to form a plasma from a process gas introduced into the reaction zone and the low frequency RF power supply is configured to supply an asymmetrical waveform to either said first or second electrodes to bias the plasma toward the substrate.

Abstract: Radio frequency plasma coupling systems allow for controllable, uniform inductive coupling within a plasma reactor, as well as separately controllable, uniform capacitive coupling within the reactor. According to exemplary embodiments, a set of parallel coupling elements are positioned on a dielectric window of a plasma chamber, and the positioning of the elements and/or a set of phase shifters situated between the elements are used to force the radio frequency current flowing within the elements to be oriented in a common direction. Consequently, the inductively coupled fields generated by the elements are reinforcing, and induce a highly uniform plasma in the reactor. Further, the electrical characteristics of the elements are such that independently controllable and highly uniform capacitive coupling can be provided in order to prevent polymer buildup on components within the reactor.

Abstract: A plasma etching apparatus has a central processing chamber, an upper exhaust chamber thereabove, and a lower exhaust chamber therebelow. The processing chamber, the upper exhaust chamber, and the lower exhaust chamber are airtightly formed by a central casing part, an upper casing part, and a lower casing part which are separably combined. The upper and lower exhaust chambers are respectively connected to upper and lower exhaust pumps. A susceptor having a support surface for supporting a target object, and an upper electrode or shower head opposing it are arranged in the processing chamber. A processing gas spouted through the shower head flows upward and downward toward the upper and lower exhaust chambers via the processing chamber.

Abstract: A method for the manufacture of highly-integrated circuits on a semiconductor substrate includes applying coatings to front and back sides of a wafer of semiconductor material in at least one deposition process, and subsequently removing the coating on the back of the wafer by etching being carried out with the front of the wafer being free of lacquer. The etching is performed in a process chamber in which reactive particles produced in a plasma only reach the back of the wafer, while advances of the reactive particles toward the front of the wafer are prevented by a protective neutral gas.

Abstract: A system that employs thermophoresis to protect lithographic surfaces from particle deposition and operates in an environment where the pressure is substantially constant and can be sub-atmospheric. The system (thermophoretic pellicle) comprises an enclosure that surrounds a lithographic component whose surface is being protected from particle deposition. The enclosure is provided with means for introducing a flow of gas into the chamber and at least one aperture that provides for access to the lithographic surface for the entry and exit of a beam of radiation, for example, and further controls gas flow into a surrounding low pressure environment such that a higher pressure is maintained within the enclosure and over the surface being protected.

Abstract: Introducing a silane reactant gas into a Jet Vapor Deposition microwave discharge source for deposition of silicon nitride films at increased rate. An array of regularly spaced micro-inlets in a JVD microwave discharge source delivers the silane reactant gas and act as non-interfering silane injectors to give a rate increase proportional to the number of micro-inlets while preserving deposited film quality.

Abstract: Because of environmental pollution prevention laws, PFC (perfluorocarbon) and HFC (hydrofluorocarbon), both etching gases for silicon oxide and silicon nitride films, are expected to be subjected to limited use or become difficult to obtain in the future. To accommodate such a problem, an etching gas containing fluorine atoms is introduced into a plasma chamber. In a region where plasma etching takes place, the fluorine-containing gas plasma is made to react with solid-state carbon in order to produce a molecular chemical species such as CF.sub.4, CF.sub.2, CF.sub.3 and C.sub.2 F.sub.4 for etching. This method assures a high etching rate and high selectivity while keeping a process window wide.

Abstract: An apparatus for producing in a deposition system an aligned uniform magnetic field across a workpiece or a wafer having a large surface area includes spaced flux guides which are formed with tapered sections that narrow towards the central region of the wafer. Magnetic members which may be permanent magnets or electromagnets are disposed close to the wafer and co-act with the flux guides to achieve the desired uniform magnetic field. In this way, thin films deposited within the deposition system are formed with uniform thickness and magnetic properties.

Abstract: A semiconductor wafer holder which has a contact part with a held object to be held is described. The contact part is constructed of a sintered silicon carbide substrate and then coated with a dense CVD silicon carbide film which has at least one crystal plane orientation out of the (111), (110), (220) and (200) planes in Miller indices to provide excellent grindability despite high hardness to withstand abrasive wear, thus facilitating surface grinding of the contact part into an ultra smooth and flat surface without dust and pit holes. This composite material has a large modulus of elasticity, a small specific gravity, and a very low coefficient of thermal expansion, creating high strength and little change in spite of exposure heat and maintaining dimensional stability in circuit printing. The sintered material together with the crystallized CVD silicon carbide film of the .beta. structure offers an electric resistance under 10.sup.10 .OMEGA..multidot.

Abstract: The formation of dust particle agglomerates within a plasma reactor is controlled through adjustment of the ratio of the temperatures of two particle species within the plasma. Adjustment of the ratio of temperatures is achieved by means of one or more temperature control devices which alter the temperature of one particle species with respect to the temperature of a second particle species. The temperature of a neutral particle species may be adjusted with respect to the temperature of dust particles present within the plasma by heating or cooling the neutral gas supplied to the plasma chamber. Alternatively, the temperature of the dust particles may be raised or lowered with respect to the neutral gas particles by heating or cooling the substrate from which the dust particles emerge.

Abstract: In a wafer temperature control method and a wafer temperature control device with which it is possible to raise the stability of the temperature of a wafer in a semiconductor manufacturing apparatus and the responsiveness of the temperature of the wafer to changes in a set wafer temperature and thereby obtain a higher quality product, the temperature of the wafer is controlled by both the flowrate of a coolant and the heat output of a heat source being controlled.

Abstract: For coating substrates (17,18,20,21,22) in a vacuum-coating chamber (2) the substrates are introduced by an air lock into the coating chamber (2) and moved along a transport path in front of the coating sources (50a,b,c,d) producing a coating cloud. To this end, the substrates (17,18,20,21,22) are led past the coating sources (50a,b,c,d) by means of holding devices (24) arranged movably on a transport belt (9) during at least two successive coating phases. During the one coating phase, the substrates (17,18,20,21,22) are oriented along one transport direction T.sub.3 oriented towards the coating sources (50a,b,c,d) such that essentially the substrate bottom of the cylindrical substrate is coated. During the subsequent second coating phase, the substrates are oriented in front of the coating sources (50a,b,c,d) in a direction T.sub.4 opposite the transport direction T.sub.3, wherein the substrates (17,18,20,21,22) are oriented such that essentially the cylindrical side surface is coated.

Abstract: Disclosed herein is a vacuum deposition apparatus including a vacuum chamber having an opening, a substrate to form a thin film thereon provided in the vacuum chamber, an evacuating device connected to the vacuum chamber for evacuating the vacuum chamber, a moving unit provided movably relative to the opening of the vacuum chamber, the moving unit having a cover for openably closing the opening of the vacuum chamber and a supporting member projecting from the cover, a reactor unit removably mounted on the supporting member of the moving unit for forming a thin film on the substrate in the condition where the reactor unit is moved into the vacuum chamber by the moving unit, and a positioning device provided in the vacuum chamber and having a retainer for separating the reactor unit from the supporting member of the moving unit and for retaining the rector unit with a given gap defined between the reactor unit and the substrate.

Abstract: A high density plasma processing chamber including an electrostatic chuck for holding a wafer, and consumable parts that are highly etch resistant, less susceptible to generating contamination and temperature controllable is disclosed. The consumable parts include a chamber liner having a lower support section and a wall that is configured to surround the electrostatic chuck. The consumable parts also include a liner support structure having a lower extension, a flexible wall, and an upper extension. The flexible wall is configured to surround an external surface of the wall of the chamber liner, and the liner support flexible wall is spaced apart from the wall of the chamber liner. The lower extension of the liner support is however, configured to be in direct thermal contact with the lower support section of the chamber liner. Additionally, a baffle ring is part of the consumable parts, and is configured to be assembled with and in thermal contact with the chamber liner and the liner support.

Abstract: The invention improves etch uniformity across a silcon wafer surface in an RF plasma etch reactor. In a first aspect of the invention, etch uniformity is enhanced by reducing the etchant species (e.g., Chlorine) ion and radical densities near the wafer edge periphery without a concomitant reduction over the wafer center, by diluting the etchant (Chlorine) with a diluent gas which practically does not etch Silicon (e.g., Hydrogen Bromide) near the wafer edge periphery. In a second aspect of the invention, etch rate uniformity is enhanced by more rapidly disassociating Chlorine molecules over the center of the wafer to increase the local etch rate, without a concomitant hastening of Chlorine dissociation near the wafer periphery, by the introduction of an inert gas over the wafer center.

Abstract: For the application of a scratch protection layer on plastic substrates, a plasma is produced by the plasma CVD method, away from the individual plastic substrate, in an excitation gas, and this excitation gas is supplied through a tube to the plastic substrate. Subsequently, an antireflection layer is applied by means of a gas flow sputter source. The apparatus provided for this has a plasma CVD chamber (1) and a gas flow sputter chamber (2), next to one another. The plastic substrates (7,8) to be coated are transported from the plasma CVD chamber (2) to the gas flow sputter chamber (1) with the aid of a transporting device (3), designed as a turning plate.

Abstract: The invention generally relates to various aspects of a plasma process, and more specifically the monitoring of such plasma processes. One aspect relates in at least some manner to calibrating or initializing a plasma monitoring assembly. This type of calibration may be used to address wavelength shifts, intensity shifts, or both associated with optical emissions data obtained on a plasma process. A calibration light may be directed at a window through which optical emissions data is being obtained to determine the effect, if any, that the inner surface of the window is having on the optical emissions data being obtained therethrough, the operation of the optical emissions data gathering device, or both. Another aspect relates in at least some manner to various types of evaluations which may be undertaken of a plasma process which was run, and more typically one which is currently being run, within the processing chamber.

Abstract: A component useful for a plasma reaction chamber includes a heat sink such as a temperature-controlled support member and a heated member such as an electrically powered showerhead electrode. The showerhead electrode is peripherally secured to the support member to enclose a gas distribution chamber between a top surface of the electrode and a bottom surface of the support member. A heat transfer member extends between the electrode and the support member and transfers heat from an area of temperature buildup on the top surface of the showerhead electrode to the bottom surface of the support member in order to control the temperature distribution across the showerhead electrode.

Abstract: A plasma etch reactor having interior surfaces facing the plasma composed of boron carbide, preferably principally composed of B.sub.4 C. The boron carbide may be a bulk sintered body or may be a layer of boron carbide coated on a chamber part. The boron carbide coating may be applied by thermal spraying, such as plasma spraying, by chemical vapor deposition, or by other layer forming technique such as a surface converting reaction. The boron carbide is highly resistant to high-density plasma etchants such as BCl.sub.3. The plasma sprayed coating is advantageously applied to only a portion of an anodized aluminum wall. The boron carbide may be sprayed over the exposed portion of the aluminum over which the anodization has been removed. A band of the aluminum substrate at the transition between the anodization and the boron carbide is roughened prior to anodization so that the boron carbide sticks to the correspondingly roughened surface of the anodization.

Abstract: A glass substrate processing apparatus, part of which comprises a composite material, the composite material being formed of a matrix and a ceramic layer formed on a surface of the matrix by a thermal spraying method, the matrix being formed of a ceramic member and an aluminum-containing material filled in a texture of the ceramic member.

Abstract: The use of a gas injector including a dielectric material around the ports has an advantage when used with plasma enhanced chemical vapor deposition in that a plasma torch will not be formed at the gas injector and the gases will not dissociate prematurely. This adds to the quality of the coatings and allows the system to be used at higher amperage and thus improved line speeds. The use of a dielectric plug at the ports allows the ports to be easily serviced and replaced.

Abstract: A method and apparatus for metal-organics chemical vapor deposition (MO CVD) of a metal layer upon a spherical substrate at atmospheric pressure are disclosed. The method includes pretreating the spherical substrate with a vapor of a first precursor in preparation for a deposition of a metal layer. The pretreated spherical substrate is then exposed to a thermally dissociated precursor of metal for depositing the metal layer onto the spherical substrate, wherein the exposure to the thermally dissociated precursor of metal provides a uniformly deposited metal layer coverage over the pretreated spherical substrate. The deposited metal layer is then annealed and cooled.

Abstract: A deposit film forming apparatus is characterized in that a temperature control member for controlling the temperature of a wall of deposition chamber is in contact with an outer wall of a deposition chamber through a heat conductivity adjusting plate, which can prevent overcooling while suppressing an increase in the temperature of the wall of deposition chamber during film formation and which can maintain the temperature of the wall of deposition chamber at a preferable temperature for deposition of film for a long time, thereby forming a deposit film. As a result, the apparatus can mass-produce deposit films of stable quality, especially, large-area and good-quality photovoltaic elements utilizing amorphous semiconductors, over a long period.

Abstract: A plasma immersion implantation system (100), including a network for controlling the system. The network communicates to the system by way of packets, which are used to pass signals to and from one of a plurality of controllers. The controllers are used to oversee one of a plurality of processing parameters or field processes such as rf voltage, pressure, etc.

Abstract: A chemical vapor deposition (CVD) system of the type having an enclosure housing a process chamber and a supply of cleaning gas, features a lid having a base plate with opposed first and second major surfaces and a plurality of throughways extending therebetween to provide an asymmetric flow of cleaning gas into the chamber. Specifically, a subportion of the second major surface lies in a plane of truncation and faces the process chamber when the lid is in a closed position. The remaining portions of the second major surface are recessed, defining central and annular recesses. The annular recess has a base surface and two spaced-apart side surfaces extending from the base surface and terminating proximate to the plane of truncation. The plurality of throughways consists of primary and secondary throughways, each of which extends from an opening in the first major surface and terminates in an orifice.

Abstract: The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zone inductively coupled plasma source; a dual zone gas distribution system; temperature controlled surfaces within the tool; a symmetrically shaped turbomolecular pumped chamber body; a dual cooling zone electrostatic chuck; an all ceramic/aluminum alloy chamber; and a remote plasma chamber cleaning system.

Abstract: A method and apparatus for treating a work surface, wherein there is provided a chamber having a longitudinal axis and longitudinally extending electrically conductive sidewalls, at least one sidewall having at least one longitudinally extending gap that interrupts a current path through the sidewalls transverse to the longitudinal axis, and wherein the chamber is sealed to allow pressure inside the chamber to be controlled.

Abstract: A deposition apparatus has a reactor 11 which is furnished with a reaction gas delivery part 13 and a substrate holder 12 in which reaction gas is delivered from the reaction gas delivery part to a substrate 23 on the substrate holder, and a thin film is deposited on the substrate by means of a chemical reaction which results from supplying HF power to the reaction gas delivery part. Plasma is generated and excites the reaction gas. The gas delivery parts 27, 29, 30, 31 produce a flow of purge gas in the dead space surrounding the reaction gas deliver part. Reaction gas which is liable to be retained in the dead space is driven out by the flow of this gas, and circulation and retention of reaction gas are prevented.

Abstract: Apparatus and method for implanting ions into a workpiece surface. A concentration of ions is produced. An optical analysis of the concentration of ions is performed and recorded. The constituency of the ion concentration is determined by comparing the optical analysis data with a database of records on a storage medium wherein the optical analysis data for given concentrations of ions have been stored for subsequent access. Ions from the ion concentration are caused to impact a workpiece surface. The dose of ions implanted into the workpiece is measured. Implantation of the workpiece is stopped once an appropriate dose has been reached.

Abstract: A plasma generating electrode device including a substrate 31 made of a dense ceramic, and an electrode 55 buried in said substrate 31, wherein said electrode 55 is isolated from a setting face of said substrate 31, and plasma is generated over said substrate. It is preferable that the minimum thickness of an electromagnetic wave permeation layer 37 is not less than 0.1 mm, the average thickness of the electromagnetic wave permeation layer is not less than 0.5 mm, the electrode 55 is a planar electrode made of a metal bulk, and the electrode is a monolithic sinter free from a joint face. This structure can be applied to an electric dust collector, an electromagnetic shield device or an electrostatic chuck. These can be preferably installed inside a semiconductor production unit using a halogen-based corrosive gas.

Abstract: A physical vapor deposition device comprises a vacuum chamber in which Ar ions are generated, a wafer chuck for holding a circular-shaped semiconductor wafer, a circular-shaped metal target above the wafer, an annular metal coil between the metal target and the wafer and made of the same material as the metal target, and a voltage controller for supplying voltage to the metal target, the wafer chuck and the metal coil. During a PVD processing, the voltage controller generates voltage biases between the metal target and the wafer chuck and between the metal coil and wafer chuck. That causes Ar ions to bombard the metal target to release metal atoms sputtering onto the center portion of the wafer, and causes Ar ions to bombard the metal coil to release the metal atoms sputtering onto the peripheral portion of the wafer so as to create a uniform metal layer on the wafer.

Abstract: A method and apparatus for improving film stability of a halogen-doped silicon oxide layer. The method includes the step of introducing helium along with the process gas that includes silicon, oxygen and a halogen element. Helium is introduced at an increased rate to stabilize the deposited layer. In a preferred embodiment, the halogen-doped film is a fluorosilicate glass film and TEOS is employed as a source of silicon in the process gas. In still another preferred embodiment, SiF.sub.4 is employed as the fluorine source for the FSG film.

Abstract: A plasma etching apparatus of the induction coupling type for processing an LCD substrate has a process container forming an airtight process room. A work table is arranged in the process room for supporting the LCD substrate. A vacuum pump is arranged for exhausting and setting the process room into a vacuum state. An antenna block having a plurality of dielectric layers is arranged to face the work table. An RF antenna is embedded in one of the dielectric layers of the antenna block for forming an electric field. A power supply is connected to the RF antenna for applying an RF power. The lowermost layer of the antenna block is formed as a shower head for supplying a process gas into the process room from a position between the RF antenna and the work table. At least part of the process gas is turned into plasma by the electric field.

Abstract: A film deposition system for coating large surfaces includes a target translated in parallel to the surface, and an energetic beam (laser beam) directed in parallel to the surface to be coated and impinging on the target, so that a plasma plume extends from the target to the surface to be coated. Translational motion of the target relative to the surface to be coated causes the plasma plume to scan over the surface and to deposit a thin film of a material from the target on the surface. Surfaces of unlimited size can be coated by this technique. The system provides short target-surface distances, high deposition rates, and can utilize small targets. An arrangement including several independently controlled and moving targets is utilized for coating surfaces having complicated shapes.

Abstract: The invention provides a vacuum coating forming device for forming a thin-film coating by a plasma beam on a substrate arranged in a vacuum chamber, the vacuum coating forming device being provided with a pressure gradient type plasma gun for generating the plasma beam toward the vacuum chamber and a converging coil which is provided so as to surround a short-tube portion of the vacuum chamber projecting toward an outlet of the plasma gun and which reduces a cross section of the plasma beam. This vacuum coating forming device further comprises an insulating tube provided at the outlet so as to surround the plasma beam and project in electric floating state, and an electron return electrode which surrounds the insulating tube within the short-tube portion and which is higher in electric potential than the outlet.

Abstract: A thin film forming apparatus is formed of a vacuum chamber, a base plate holder for holding a base plate near a central part of the vacuum chamber, and ECR plasma generating devices respectively connected to both side portions of the vacuum chamber. A magnetic field generating device is situated adjacent to the vacuum chamber for generating a predetermined magnetic field in the vacuum chamber, and a gas introducing system is connected to the vacuum chamber for introducing a reaction gas into the vacuum chamber. Since the base plate holder has a shape corresponding to an external shape of the base plate, a distance between the base plate and the base plate holder is uniform. The films with uniform thicknesses can be formed on both surfaces of the base plate.

Abstract: A plasma etching apparatus used in the semiconductor device fabrication process improves the uniformity of the etch process by ensuring the uniformity of a plasma gas. The apparatus includes magnetic coils surrounding an outer wall of an etching chamber for generating a magnetic field within the chamber to guide a plasma etch gas created by radio frequency (RF) energy. A power cable is connected to the magnetic coils for supplying power. A bracket, made of an insulating material, is attached at one side to the outer wall of the etching chamber and at an opposing side to the power cable.

Abstract: A method of reducing particle generation from the thin coating deposited on the internal surfaces of a deposition chamber which undergoes temperature variation greater than 100.degree. C. comprising maintaining the temperature variation of the internal surfaces low enough during the process cycle to keep thermal expansion stresses between the coating and the surfaces under 500 MPa. For titanium nitride deposited on stainless steel, this means keeping temperature variations under approximately 70.degree. C. in a chamber that may be heated to over 350.degree. C. during a typical processing operation. Preferably, a supplemental heater is mounted behind the upper shield and controlled by a temperature sensitive element which provides feedback control based on the temperature of the upper shield.

Abstract: The film-forming apparatus includes a gas introduction tube for introducing an inert gas into a vacuum chamber, a vapor source and a target, and forms thin film by depositing sputtered particles and evaporated particles on the surface of a substrate, the sputtered particles being liberated by sputtering the target using ion energy of plasma generated around the target while the evaporated particles being obtained by evaporating a vapor source by heating and ionizing evaporated components using the plasma.

Abstract: A method for removing material from a substrate. A plasma is generated in a plasma generating and discharge device including a sapphire plasma tube. At least one fluorine-containing compound is introduced into the plasma. A forming gas is introduced into the plasma. The plasma is directed toward the material to be removed from the substrate.

Abstract: An apparatus for forming a thin film comprises a housing defining a reaction chamber; a pair of electrodes securely fixed in the reaction chamber of the housing such that they are spaced from each other by a predetermined distance; and a plasma carrier detachably disposed between the pair of electrodes and having at least one substrate assembled thereto, the plasma carrier and at least one substrate cooperating with each other to delimit a glow discharge space, the plasma carrier being formed with a plurality of gas intake holes and a plurality of gas exhaust holes for communicating the glow discharge space with the outside. According to the present invention, in a plasma chemical vapor deposition device, a glow discharge space is delimited by a plasma carrier, whereby a cleansing procedure is simplified and productivity is enhanced while advantages of a box carrier type plasma chemical vapor deposition device are afforded.

Abstract: The invention provides a microwave plasma process apparatus in which an antenna having a tubular member curved in a C shape or a spiral shape and including a slit is disposed on a sealing member for sealing a chamber, so that a microwave can be emitted through the slit to the sealing member.

Abstract: The invention contours the chamber surface overlying semiconductor wafer being processed (i.e., the chamber ceiling) in such a way as to promote or optimize the diffusion of plasma ions from their regions of origin to other regions which would otherwise have a relative paucity of plasma ions. This is accomplished by providing a greater chamber volume over those areas of the wafer otherwise experiencing a shortage of plasma ions and a smaller chamber volume over those areas of the wafer experiencing a plentitude of plasma ions (e.g, due to localized plasma generation occurring over the latter areas). Thus, the ceiling is contoured to promote a plasma ion diffusion which best compensates for localized or non-uniform patterns in plasma ion generation typical of an inductively coupled source (e.g., an overhead inductive antenna).

Abstract: The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zone inductively coupled plasma source; a dual zone gas distribution system; temperature controlled surfaces within the tool; a symmetrically shaped turbomolecular pumped chamber body; a dual cooling zone electrostatic chuck; an all ceramic/aluminum alloy chamber; and a remote plasma chamber cleaning system.

Abstract: A substrate processing device includes a reactor equipped with a substrate holder and a gas feed electrode facing the substrate holder, a pump mechanism for pumping out an interior of the reactor, a reaction gas feed mechanism for introducing a reaction gas through the gas feed electrode into the interior of said reactor, a high frequency power source for applying a high frequency power to said gas feed electrode, a connecting port formed in a sidewall of said reactor, the pump mechanism is connected to the connecting port formed in the sidewall of the reactor, and a space between the gas feed electrode and the substrate holder is set so that a conductance between the gas feed electrode and the substrate holder is lower than a conductance between the sidewall of the reactor and the gas feed electrode.

Abstract: A method and apparatus for removing particles from an interior surface of a processing chamber using a two-step cleaning process. The method includes introducing a first cleaning process gas into the processing chamber, applying energy to that first cleaning process gas to remove particles from the processing chamber's interior surface, and introducing a second cleaning process gas into the processing chamber to remove a cleaning residue formed by a reaction between the first cleaning process gas and the processing chamber's interior surface. Removing or gettering the cleaning residue from the chamber wall improves the quality of the wafers formed in the process.

Abstract: A process of forming a layer of conductive material over a layer of insulating material is provided. A wafer is positioned on a wafer platform such that it is thermally and electrically coupled to the wafer platform. A clamping ring engages the peripheral edge of the wafer such that the wafer is held against the top surface of the wafer platform. The clamping ring is electrically coupled to the wafer pedestal. The wafer is exposed to a plasma comprising conductive material and an initial layer of conductive material is formed over the insulating layer until the top surface of the wafer is electrically coupled to the clamping ring. The wafer pedestal is then electrically biased and additional conductive material is formed. Once the initial layer of conductive material is electrically coupled to the clamping ring, the potential difference between the top and bottom surface of the wafer is zero such that arcing through the wafer is reduced.

Abstract: Methods and devices for producing plasmas of more uniform density and greater height than plasmas generated by previously known magnetron-type plasma-generating devices. The present invention utilizes electrodes containing multiple magnets positioned such that like magnetic poles of the magnets are all facing in substantially the same direction.

Abstract: An apparatus and method for depositing thin films on the surface of a device such as a spherical shaped devices. The apparatus includes an enclosure containing a plurality of apertures and two chambers. The apertures connect to conduits for inputting and outputting the devices as well as injecting and releasing different gases and/or processing constituents. A first chamber is formed within the enclosure and includes a plasma torch. A second chamber is formed within the enclosure and includes a heating coil. Devices move through the input conduit and into the first chamber where they are heated by the plasma torch. Because of this heating, radicals, electrons, and ions near the surface of the devices are generated. The heated devices then move into the second chamber where they are further heated by energy from the conductor coil. At this time, the gases and/or processing constituents react with the heated device thereby growing a thin film on its outer surface.