Abstract: The invention is embodied in an inductively coupled RF plasma reactor including a reactor chamber enclosure defining a plasma reactor chamber and a support for holding a workpiece inside the chamber, a non-planar inductive antenna adjacent the reactor chamber enclosure, the non-planar inductive antenna including inductive elements spatially distributed in a non-planar manner relative to a plane of the workpiece to compensate for a null in an RF inductive pattern of the antenna, and a plasma source RF power supply coupled to the non-planar inductive antenna. The planar inductive antenna may be symmetrical or non-symmetrical, although it preferably includes a solenoid winding such as a vertical stack of conductive windings. In a preferred embodiment, the windings are at a minimum radial distance from the axis of symmetry while in an alternative embodiment the windings are at a radial distance from the axis of symmetry which is a substantial fraction of a radius of the chamber.

Abstract: A radio frequency plasma multiple-coil antenna allows for controllable, uniform inductive coupling within a plasma reactor. According to exemplary embodiments, multiple coils are positioned on a dielectric window of a plasma chamber, and are powered by a single radio frequency generator and tuned by a single matching network. Each coil is either planar or a combination of a planar coil and a vertically stacked helical coil. The input end of each coil is connected to an input tuning capacitor and the output end is terminated to the ground through an output tuning capacitor. The location of the maximum inductive coupling of the radio frequency to the plasma is mainly determined by the output capacitor, while the input capacitor is mainly used to adjust current magnitude into each coil.

Abstract: A semiconductor wafer processor includes a chamber having a wafer support. A magnetic field generator is configured to generate a magnetic field within the chamber at a location proximate a surface of a wafer received by the wafer support. The magnetic field generator comprises a plurality of conductors within the chamber proximate the support which radiate outwardly from a substantially common origin to a periphery. The origin and periphery can be in the same or multiple planes. In one embodiment, the magnetic field generator includes a first plurality of conductors radiating outwardly from a first origin to a first periphery, and a second plurality of conductors annularly radiating outwardly from an annular second origin to an annular second periphery. The first periphery is received at least partially within the second annular periphery. The generator can be utilized apart from a semiconductor wafer processor, such as for example in an electric motor or plasma generating apparatus.

Abstract: The processing chamber of an etching apparatus is divided into a plasma generating space and a processing space by a grid electrode. A first feed gas is supplied from a gas source unit to the plasma generating space through a first flow control valve mechanism and a first gas supply line. A second feed gas is supplied from the gas source unit to the processing space through a second flow control valve mechanism and a second gas supply line. The interior of the processing chamber is evacuated by an exhaust pump through an exhaust line connected to the processing space. Each of the first and second flow control valve mechanisms has a plurality of valves whose opening degrees are separately controlled by a CPU.

Abstract: A method and apparatus for depositing a film by chemical vapor deposition comprises a showerhead for dispersing reactant gases into the processing space wherein the showerhead has a first space therein operable for receiving and dispersing the first reacting gas, and has a second space therein, generally isolated from the first space, and operable for receiving and dispersing the second reactant gas separate from the first gas dispersion for maintaining segregation of reactant gases and generally preventing premature mixture of the gases prior to their introduction into the processing space to prevent premature deposition in the system.

Abstract: The present invention employs a plurality of small inductive antennas to generate a processing plasma. In one embodiment, small coil antennas are secured within the chamber so that both of the pole regions of the antennas couple power to the plasma. The antennas may be oriented so that poles regions are anywhere from perpendicular, to parallel to a chamber wall. The number, location, and orientation of the small antennas within the chamber may be selected to optimize plasma characteristics. In addition, the antennas may be secured to top, side, or bottom walls to improve plasma characteristics; and power deposition within the processing chamber may be adjusted by changing the orientation of the coils, and the magnitude and phase relationship of RF power through the individual antennas. Process gas may be selectively delivered to areas of high power deposition such as adjacent pole regions or through the center of a coil or loop antenna to control plasma characteristics.

Abstract: A method and apparatus for controlling deposit build-up on an interior surface of a dielectric member of a plasma processing chamber. The deposit build-up is controlled by selective ion bombardment of the inner surface by shifting location of a peak voltage amplitude of a voltage standing wave on an antenna such as a flat spiral coil of the plasma processing chamber. A region of high ion bombardment on the interior surface of the dielectric member is displaced by controlling the value of a termination capacitance over a range of values causing regions of low and high ion bombardment to move over the dielectric member in order to effect cleaning thereof.

Abstract: Radio frequency plasma coupling systems allow for controllable, uniform inductive coupling within a plasma reactor, as well as separately controllable, uniform capacitive coupling within the reactor. According to exemplary embodiments, a set of parallel coupling elements are positioned on a dielectric window of a plasma chamber, and the positioning of the elements and/or a set of phase shifters situated between the elements are used to force the radio frequency current flowing within the elements to be oriented in a common direction. Consequently, the inductively coupled fields generated by the elements are reinforcing, and induce a highly uniform plasma in the reactor. Further, the electrical characteristics of the elements are such that independently controllable and highly uniform capacitive coupling can be provided in order to prevent polymer buildup on components within the reactor.

Abstract: An apparatus and a method for preventing etch rate drop after a machine idle time in a plasma etch chamber are disclosed. In the apparatus, an enclosure for enclosing a top plate in the plasma etch chamber is provided which is equipped with a heater in fluid communication with the enclosure. The top plate which includes a dielectric window and an inductive coil can be heated to a temperature between about 35.degree. C. and about 45.degree. C. during machine idle time to prevent etch rate drop after the chamber is restarted. The plasma etch chamber may be an inductively coupled RF plasma etcher. The heater may be constructed by a heater housing which is in fluid communication with the enclosure, at least one heating lamp in the housing, and a blower for delivering heated air into the enclosure cavity.

Abstract: In a plasma generating apparatus utilizing electron cyclotron resonance, comprising a vacuum vessel capable of maintaining a vacuum state therein, an antenna for radiating electromagnetic waves into the vacuum vessel, a permanent magnet for forming a resonance magnetic field, and an outer sleeve made of an insulator and accommodating the permanent magnet therein, the outer sleeve being permeable to lines of magnetic force and having air tightness, two permanent magnets are arranged to form the resonance magnetic field in a spaced relation with the same polarity poles of the permanent magnets facing each other. With this ECR type plasma generating apparatus, a resonance region is increased so that various plasma processes can be uniformly performed over a wider region.

Abstract: An inductively coupled type dry etching apparatus has a spiral RF antenna disposed on the ceiling wall of a process chamber. A susceptor is arranged in the process chamber, for mounting a semiconductor wafer thereon. The ceiling wall has upper and lower layers with a dielectric matrix, and a conductive Faraday shield layer sandwiched therebetween. The Faraday shield layer has a plurality of slits radially arranged. The matrix of the upper and lower layers and the Faraday shield layer are set to have coefficients of thermal expansion close to each other, and/or the Faraday shield layer is set to have a very small thickness.

Abstract: In an apparatus for forming a film of a semiconductor device in which chemical vapor deposition is used to accumulate insulation films such as a carbon-compound film and a silicon-oxide or silicon-nitride film on a silicon substrate, it is possible to prevent the peel-off of the silicon-oxide film in the circumferential area of the silicon substrate.The apparatus includes a chamber including a holder to hold the substrate, a ring-shaped member to grasp the substrate in cooperation with the holder, and a reactive gas supplier to supply a predetermined type of reactive gas to the chamber. The member dimensionally has an inside diameter smaller than an outside diameter of the holder and an outside diameter larger than that of the holder. During the film forming process with the reactive gas, the member concentrically covers a circumferential region of a surface of the substrate.

Abstract: This invention relates to an inductively-coupled high density plasma producing apparatus and a plasma processing equipment having the apparatus. The plasma processing equipment consists of a shape-adjustable coil (antenna), a RF power generator, an impedance matching network, a plasma chamber, a gas supply system, and a vacuum system. The gases for producing plasma are fed into the plasma chamber. The RF power is fed into the coil to produce plasma in the plasma chamber. This invention is characterized by the provision of a shape-adjustable coil, which is used to shape the RF power profile in the plasma chamber such that the plasma density profile (uniformity) can be controlled.

Abstract: The invention for etching a substrate containing an oxide layer reduces activated oxygen within the plasma and maintains a high soft etch rate in a series of subsequent etches. In one aspect of the invention, a second substrate, in the form of a substrate ring, is utilized in the processing chamber and is etched in conjunction with a first substrate being processed. This substrate ring is formed of a material which, when etched, reacts with activated oxygen to form a stable oxygen-containing compound which may be evacuated from the system. In another aspect of the invention, a first power level for inductively coupling energy to the plasma is determined to establish a bias voltage level at the substrate of approximately 100 Volts. A second, lower power level is then determined for producing a bias voltage level at the substrate not significantly higher than 300 Volts.

Abstract: The present invention provides an apparatus for depositing a film on a substrate comprising a processing chamber, a substrate support member disposed within the chamber, a first gas inlet, a second gas inlet, a plasma generator and a gas exhaust. The first gas inlet provides a first gas at a first distance from an interior surface of the chamber, and the second gas inlet provides a second gas at a second distance that is closer than the first distance from the interior surface of the chamber. Thus, the second gas creates a higher partial pressure adjacent the interior surface of the chamber to significantly reduce deposition from the first gas onto the interior surface.

Abstract: A coil for a plasma chamber in a semiconductor fabrication process comprises a continuous, one-piece conductive conduit having a first end and a second end positioned on the chamber exterior, a coil portion positioned in the chamber interior and a feedthrough portion positioned in an aperture of the chamber wall. Because the conduit lacks any joints between the feedthrough and the interior coil portions, a potential source of coolant leak is eliminated.

Abstract: Disclosed is a plasma processing apparatus, comprising a processing chamber in which an object to be processed is arranged, a processing gas introducing pipe for introducing a processing gas into the processing chamber, an antenna arranged in that region on the outer surface of the processing chamber which is positioned to correspond to the object to be processed, an insulator being interposed between the antenna and the processing chamber, and a high frequency power being supplied to the antenna so as to form an induction electric field near the object to be processed, and a paramagnetic member arranged to overlap at least partially with the antenna.

Abstract: In a wafer temperature control method and a wafer temperature control device with which it is possible to raise the stability of the temperature of a wafer in a semiconductor manufacturing apparatus and the responsiveness of the temperature of the wafer to changes in a set wafer temperature and thereby obtain a higher quality product, the temperature of the wafer is controlled by both the flowrate of a coolant and the heat output of a heat source being controlled.

Abstract: A system and related method are disclosed for performing inductively-coupled-plasma-enhanced ionized physical-vapor deposition process for depositing a material layer on a work piece such as a semiconductor substrate or a thin-film head substrate. Within a PVD process chamber, a plurality of inductive antenna segments axially surround a region between the PVD target/cathode assembly and the work piece. The inductive antenna segments are arranged cylindrically around (or conformlly with respect to the physical-vapor deposition target/cathode) and aligned substantially vertically with respect to the target/cathode assembly and/or the work piece. A first radio-frequency (RF) power source provides electrical power to half of the antenna segments to create a first inductively-coupled plasma source, a second RF power source provides electrical power to the remaining antenna segments to create a second inductively-coupled-plasma source.

Abstract: Disclosed is a plasma processing apparatus, comprising a processing chamber in which an object to be processed is arranged, a processing gas introducing pipe for introducing a processing gas into the processing chamber, an antenna arranged in that region on the outer surface of the processing chamber which is positioned to correspond to the object to be processed, an insulator being interposed between the antenna and the processing chamber, and a high frequency power being supplied to the antenna so as to form an induction electric field near the object to be processed, and a paramagnetic member arranged to overlap at least partially with the antenna.

Abstract: An external inductive coil is used in a plasma process system having a dielectric shield which separates the coil from the plasma. The shield includes channels provided along the inner side of the shield facing the plasma region. The channels inhibit the formation of a continuous metal film over the inner surface of the shield during sputtering and deposition. The sidewalls defining the channels permit RF transmission after the surfaces directly facing the plasma are coated with metal.

Abstract: A plasma process reactor is disclosed that allows for greater control in varying the functional temperature range for enhancing semiconductor processing and reactor cleaning. The temperature is controlled by splitting the process gas flow from a single gas manifold that injects the process gas behind the gas distribution plate into two streams where the first stream goes behind the gas distribution plate and the second stream is injected directly into the chamber. By decreasing the fraction of flow that is injected behind the gas distribution plate, the temperature of the gas distribution plate can be increased. The increasing of the temperature of the gas distribution plate results in higher O.sub.2 plasma removal rates of deposited material from the gas distribution plate. Additionally, the higher plasma temperature aids other processes that only operate at elevated temperatures not possible in a fixed temperature reactor.

Abstract: Apparatus for in-situ monitoring of a process in a semiconductor wafer processing system consists of a process chamber having a dome, an enclosure disposed above the chamber, a process monitoring assembly positioned proximate the dome, an opening in the dome, and a window covering the opening. A portion of the apparatus supports the process monitoring assembly to establish a line-of-sight propagation path of monitoring beams from above the dome, through the window to the substrate to facilitate etch depth measurement without encountering interference from high power energy sources proximate the chamber. A method of fabricating a process monitoring apparatus consists of the steps of boring an opening into a dome, positioning the process monitoring assembly in proximity to the dome so as to allow a line-of-sight propagation path of monitoring beams from the process monitoring assembly to a wafer, and covering the opening with a window.

Abstract: Apparatus and method for providing a modulated-bias plasma are described. In particular, an RF source or collector includes one or more sources to provide differing driving frequencies or bias frequencies, respectively. These frequencies, over time, interfere with one another to produce beating at one or more controllable, infinitely variable beat frequencies. As a beat frequency has significantly fewer cycles per second than a driving or bias frequency, a modulated-bias plasma may be provided without turning power on and off as in conventional "pulsed" plasma systems. Beat frequencies facilitate modulation of the driving or bias frequencies, which may lie within a relatively narrow frequency band. Also, the use of a plurality of driving or bias frequencies facilitates use of more conventional RF sources or collectors owing to lower power requirements at each frequency. In accordance therewith, apparatus and method described may be employed for plasma etching and/or plasma enhanced vapor deposition.

Abstract: A ceramic composition of matter for a process kit and a dielectric window of a reactor chamber wherein substrates are processed in a plasma of a processing gas. The ceramic composition of matter contains a ceramic compound (e.g. Al.sub.2 O.sub.3) and an oxide of a Group IIIB metal (e.g., Y.sub.2 O.sub.3). A method for processing (e.g. etching) a substrate in a chamber containing a plasma of a processing gas. The method includes passing processing power through a dielectric window which is formed from the ceramic composition of matter.

Abstract: A plasma treatment system (200) for implantation with a novel susceptor with a silicon coating (203). The system (200) has a variety of elements such as a chamber, which can have a silicon coating formed thereon, in which a plasma is generated in the chamber. The system (200) also has a susceptor disposed in the chamber to support a silicon substrate. The silicon coating reduces non-silicon impurities that may attach to the silicon substrate. The system (200) also includes a silicon liner, which is used to line inner portions of the chamber walls.

Abstract: A thin film forming apparatus has a vacuum chamber as a film forming chamber, a plasma generating unit and an ion source. In the vacuum chamber, a substrate is placed and a thin film is formed on the substrate. The plasma generating unit decomposes a source gas introduced into the vacuum chamber to generate a plasma of the source gas near a film-forming surface of the substrate within the vacuum chamber. The ion source is provided around the vacuum chamber. The ion source produces ion beams that are drawn out to be directed substantially parallel to the film-forming surface of the substrate to irradiate the plasma.

Abstract: A chemical vapor deposition (CVD) system of the type having an enclosure housing a process chamber and a supply of cleaning gas, features a lid having a base plate with opposed first and second major surfaces and a plurality of throughways extending therebetween to provide an asymmetric flow of cleaning gas into the chamber. Specifically, a subportion of the second major surface lies in a plane of truncation and faces the process chamber when the lid is in a closed position. The remaining portions of the second major surface are recessed, defining central and annular recesses. The annular recess has a base surface and two spaced-apart side surfaces extending from the base surface and terminating proximate to the plane of truncation. The plurality of throughways consists of primary and secondary throughways, each of which extends from an opening in the first major surface and terminates in an orifice.

Abstract: The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zone inductively coupled plasma source; a dual zone gas distribution system; temperature controlled surfaces within the tool; a symmetrically shaped turbomolecular pumped chamber body; a dual cooling zone electrostatic chuck; an all ceramic/aluminum alloy chamber; and a remote plasma chamber cleaning system.

Abstract: A method and apparatus for treating a work surface, wherein there is provided a chamber having a longitudinal axis and longitudinally extending electrically conductive sidewalls, at least one sidewall having at least one longitudinally extending gap that interrupts a current path through the sidewalls transverse to the longitudinal axis, and wherein the chamber is sealed to allow pressure inside the chamber to be controlled.

Abstract: An insulative inter-turn shield positioned at the channel in coil windings to confine the plasma generated by energy radiated by the coil windings in an apparatus for sputtering material onto a workpiece. The insulative shield can prevent the escape of the plasma through the channel between the windings to thereby improve the effectiveness of the sputtering process. In addition, the shield can also block the passage of sputtered material through the channel, preventing the contamination of the vacuum chamber.

Abstract: An inductively coupled type dry etching apparatus has an RF antenna disposed on a dielectric wall forming the ceiling of a process chamber. The process chamber is divided into a plasma generating space and a processing space by the partition of an intermediate electrode. A susceptor is arranged in the processing space, for mounting a semiconductor wafer thereon. The partition has openings for the plasma generating space and the processing space to communicate with each other. The partition is formed of a plurality of conductive beams radially arranged. The conductive beams extend in directions perpendicular to the direction of an electric field generated by the RF antenna, and have warps to absorb thermal stress.

Abstract: A physical vapor deposition device comprises a vacuum chamber in which Ar ions are generated, a wafer chuck for holding a circular-shaped semiconductor wafer, a circular-shaped metal target above the wafer, an annular metal coil between the metal target and the wafer and made of the same material as the metal target, and a voltage controller for supplying voltage to the metal target, the wafer chuck and the metal coil. During a PVD processing, the voltage controller generates voltage biases between the metal target and the wafer chuck and between the metal coil and wafer chuck. That causes Ar ions to bombard the metal target to release metal atoms sputtering onto the center portion of the wafer, and causes Ar ions to bombard the metal coil to release the metal atoms sputtering onto the peripheral portion of the wafer so as to create a uniform metal layer on the wafer.

Abstract: A substrate processing system that includes a ceramic substrate holder having an RF electrode embedded within the substrate holder and a gas inlet manifold spaced apart from the substrate holder. The gas inlet manifold supplies one or more process gases through multiple conical holes to a reaction zone of a substrate processing chamber within the processing system and also acts as a second RF electrode. Each conical hole has an outlet that opens into the reaction zone and an inlet spaced apart from the outlet that is smaller in diameter than said outlet. A mixed frequency RF power supply is connected to the substrate processing system with a high frequency RF power source connected to the gas inlet manifold electrode and a low frequency RF power source connected to the substrate holder electrode. An RF filter and matching network decouples the high frequency waveform from the low frequency waveform.

Abstract: An apparatus and method for controlling the plasma potential of a plasma within a plasma chamber (50) is disclosed. The apparatus and method utilize a Faraday shielded inductive source antenna (60) to generate the plasma within the plasma chamber (50) and an electrically conductive probe (100) that is inserted into the plasma chamber (50) to regulate the plasma potential. By independent biasing of the conductive probe (100), which regulates the plasma potential, the ion energy distribution at a conductive substrate (150) within the plasma chamber (50) may be controlled.

Abstract: Controlling ion/radical ratio and monoatomic/polyatomic radical ratio in a process plasma provides improved processing performance during inductively-coupled plasma and/or helicon wave plasma processing of substrate materials. In a plasma processing method employing inductively coupled plasma, high frequency current to a high frequency antenna is intermittently supplied in a controlled manner to control the state of gas dissociation to promote formation of polyatomic radicals. In a plasma processing method employing helicon wave plasma, current supplied to a magnetic field generator is intermittently supplied in a controlled manner to promote formation of ions. In a preferred method, both the high frequency current and magnetic field generating current are varied in a controlled manner to provide a variable plasma composition, i.e., radical rich plasma or ion-rich plasma, as desired, for improved plasma processing, especially improved selective anisotropic dry etching at high etch rate.

Abstract: A method for controlling the voltage distribution of the standing wave impressed upon the coil of an inductively coupled plasma generator includes the steps of impressing a radio frequency voltage across the coil to establish a standing wave thereacross. A voltage profile is selected for the standing wave so as to control the location and amount of capacitive coupling. A circuit parameter is controlled to achieve the selected voltage profile. Proper selection of the voltage profile enhances process capabilities, decreases the time between cleans, minimizes component wear, and minimizes cleaning time. An apparatus for carrying out the disclosed method is also disclosed.

Abstract: The case of maintainability and component replacement for a vacuum processing chamber is enhanced by providing a vacuum chamber roof assembly whose connection to the vacuum chamber body is through a clamped connection. Accessories needed for the roof assembly, e.g. cooling, heating, RF power, are separately supported and terminated to an accessories supporting cold plate, which is separately mounted such it is easily movable, for example by hinging from the chamber body. The roof of the chamber can then easily be separated from the chamber body and replaced. In an further mode the chamber roof can be easily raised to provide easy access to modular components inside the processing chamber. All components exposed to the plasma in the chamber can be easily accessed and replaced.

Abstract: A baffle plate for semiconductor processing apparatus. The baffle plate includes a plurality of slits. A plurality of fins are located between adjacent slits. The fins have varying heights and a supporting portion interconnects the fins.

Abstract: A method and apparatus for improving film stability of a halogen-doped silicon oxide layer. The method includes the step of introducing helium along with the process gas that includes silicon, oxygen and a halogen element. Helium is introduced at an increased rate to stabilize the deposited layer. In a preferred embodiment, the halogen-doped film is a fluorosilicate glass film and TEOS is employed as a source of silicon in the process gas. In still another preferred embodiment, SiF.sub.4 is employed as the fluorine source for the FSG film.

Abstract: In an apparatus for producing an electromagnetically coupled planar plasma comprising a chamber having a dielectric shield in a wall thereof and a planar coil outside of said chamber and adjacent to said window coupled to a radio frequency source, the improvement whereby a scavenger for fluorine is mounted in or added to said chamber. When a silicon oxide is etched with a plasma of a fluorohydrocarbon gas, the fluorine scavenger reduces the free fluorine radicals, thereby improving the selectivity and anisotropy of etching and improving the etch rate while reducing particle formation.

Abstract: A plasma etching apparatus of the induction coupling type for processing an LCD substrate has a process container forming an airtight process room. A work table is arranged in the process room for supporting the LCD substrate. A vacuum pump is arranged for exhausting and setting the process room into a vacuum state. An antenna block having a plurality of dielectric layers is arranged to face the work table. An RF antenna is embedded in one of the dielectric layers of the antenna block for forming an electric field. A power supply is connected to the RF antenna for applying an RF power. The lowermost layer of the antenna block is formed as a shower head for supplying a process gas into the process room from a position between the RF antenna and the work table. At least part of the process gas is turned into plasma by the electric field.

Abstract: The present invention provides an apparatus and method for processing a workpiece in an inductively coupled plasma reactor. Inductive power is applied to the reactor to generate a plasma. A magnetic field is generated within the plasma reactor having lines of force oriented perpendicular to the workpiece surface. It is a feature of the invention to control the electron temperature near the surface of the workpiece by controlling the applied magnetic field. It is a further feature to increase average ion density near the workpiece without otherwise causing damage to the workpiece due to uneven charge build-up. The applied magnetic field can be time invariant or time variant. In both cases, processing can be optimized by adjusting the magnitude of the magnetic field to a level just below where damage due to uneven charge build-up occurs. With the time variant field, the average ion density can be adjusted with respect to average electron temperature.

Abstract: A plasma processing device (25) including a vacuum chamber (27) for processing a substrate (29) and a source chamber (26) for generating a plasma is disclosed where the source chamber (26) has a non-cylindrical geometry. Helicon waves of plasma are propagated from the source chamber into the vacuum chamber by a magnetic field having substantially parallel magnetic field lines extending from the source chamber into the vacuum chamber. A RF antenna (31 and 32) of a novel serpentine configuration is used to couple electromagnetic energy into the source chamber to create helicon plasma waves in the source chamber (26). The non-cylindrical geometry of the source chamber allows the processing of large area substrates due to the ability to scale the source chamber to the desired application while maintaining throughput efficiency and the ability to propagate helicon waves along the magnetic field lines present in the source chamber.

Abstract: An apparatus is provided for controlling the flow of gaseous reactants in a CVD reactor through the use of a body having interior and exterior regions, in which the body defines at least one flow path between the interior and exterior regions so as to create a pressure drop from the interior to the exterior of the body within the chamber. The body is disposed in a reaction chamber with a first area proximate a gaseous reactant inlet and a second area proximate a substrate support such that the substrate is positioned in proximity to the interior of the body. As such, gaseous reactants introduced into the interior of said chamber through the inlet create a pressure drop between the interior and the exterior of the body. In a preferred embodiment, the body is cylindrically shaped and contains perforations providing the flow paths. Preferably, the perforations are either more numerous or larger in the second area than the first area to create a pressure gradient in the interior of the body.

Abstract: The arrangement comprises an antenna coil disposed close to a cover 4 for a Plasma forming chamber 3 and having one side surface opposed to the chamber space of said plasma forming chamber, a magnetically permeable core 7 of ferromagnetic material whose lower surface opposed to said chamber space is formed with a groove 7a in which the conductor of said antenna coil is received, and a susceptor 16 disposed in the lower region of said chamber space for placing an object to be treated 19 thereon.

Abstract: An inductively coupled type dry etching apparatus has an RF antenna disposed on the ceiling wall of a process chamber. A susceptor is arranged in the process chamber, for mounting a semiconductor wafer thereon. The ceiling wall has a matrix of alumina ceramic, and heat generating elements of a salt of a transition metal oxide, which are dispersed in the matrix and capable of self-generating heat by an RF electric field.

Abstract: The invention contours the chamber surface overlying semiconductor wafer being processed (i.e., the chamber ceiling) in such a way as to promote or optimize the diffusion of plasma ions from their regions of origin to other regions which would otherwise have a relative paucity of plasma ions. This is accomplished by providing a greater chamber volume over those areas of the wafer otherwise experiencing a shortage of plasma ions and a smaller chamber volume over those areas of the wafer experiencing a plentitude of plasma ions (e.g, due to localized plasma generation occurring over the latter areas). Thus, the ceiling is contoured to promote a plasma ion diffusion which best compensates for localized or non-uniform patterns in plasma ion generation typical of an inductively coupled source (e.g., an overhead inductive antenna).

Abstract: The invention is embodied by a plasma reactor for processing a workpiece, including a reactor enclosure defining a processing chamber, a semiconductor window, a base within the chamber for supporting the workpiece during processing thereof, a gas inlet system for admitting a plasma precursor gas into the chamber, and an inductive antenna adjacent a side of the semiconductor window opposite the base for coupling power into the interior of the chamber through the semiconductor window electrode.

Abstract: A method of and apparatus for controlling the potential of a plasma including a metal-walled chamber and a conductive coil which carries a radio-frequency current and is wrapped around the metal-walled chamber to produce a plasma within the chamber. A filament made of refractory metal has two ends, and a central portion formed in the shape of a probe. The central portion of the filament extends into the interior of the chamber and the two ends of the filament pass through a wall of the chamber to the exterior of the chamber. A heating power supply is connected to the two ends to the filament and to the chamber wall for heating the filament to a predetermined temperature above that of the plasma. The heated filament produces thermionic emissions from the filament to the plasma in order to control the plasma potential and eliminate unipolar arcing at the chamber wall.