Abstract: An apparatus for cleaning earphones that includes a brush element, a positioning element, and a motive element. A brush element selectively contacts and removes debris from an earphone, and a positioning element supports the earphone in a desired position relative to the brush element. A motive element is configured to move the brush element relative to the earphone. A corresponding system and method are also disclosed and claimed herein.

Abstract: A steam cleaning apparatus comprising: a main body having a boiler and a pump; a main power switch; a cleaning head coupled to a main body through a joint; a yoke in the main body or the cleaning head, the yoke having an arm contacting a position sensitive switch so that when the main body is in a non-use position, the position sensitive switch prevents the main switch from supplying power, and when the main body is in an in-use position, the position sensitive switch allows the main switch to provide power.

Abstract: The present invention includes methods and materials for cleaning materials, particles, or chemicals from a substrate with a brush or pad. The method comprising: engaging a surface of a rotating wafer with an outer circumferential surface of a rotating cylindrical foam roller, the cylindrical foam roller having a plurality of circumferentially and outwardly extending spaced apart nodules extending from the outer surface, each nodule defining a height extending from the outer surface of the cylindrical foam roller to a substrate engagement surface of the nodule, the substrate engagement surface of one or more of the nodules having a rounded configuration; and positioning the cylindrical foam roller on the substrate such that the one or more nodules are positioned to have only the rounded substrate engagement surface contact the substrate such that no linear surface of the one or more nodules contacts the substrate.

Abstract: A rinsing method for a water-conducting domestic appliance is provided in which rinsing liquid is heated to a first temperature in a first operating mode in at least one partial program step of a first rinse cycle; a scale formation in the water-conducting domestic appliance is recorded by a scale sensor arranged in a hydraulic system; the scale formation is compared with a nominal value for the scale formation; and, upon exceeding the nominal value, a second rinse cycle is executed in a second operating mode, while the rinsing liquid is heated to a second temperature that is higher than the first temperature.

Abstract: A method for cleaning a ceramic component includes generating a computer solid model of a component, converting the computer solid model to a stereo-lithographic instruction file, and preparing the component in a stereo-lithography machine in response to the stereo-lithographic instruction file. The method further includes providing an amount of solvent, where a residue left from preparing the component is at least partially soluble in the solvent. The method includes immersing at least part of the component in the solvent, heating the solvent in a liquid state, and reducing a pressure of the solvent sufficiently to boil the solvent. The method further includes heat-curing the component.

Abstract: The invention relates to a device for loosening a polymer layer from a surface of a substrate.

Abstract: A semiconductor substrate cleaning method includes cleaning a semiconductor substrate formed with a line-and-space pattern, rinsing the substrate, supplying the rinse water to rinse the substrate, and drying the substrate. The rinsing includes supplying deionized water and hydrochloric acid into a mixing section to mix the deionized water and the hydrochloric acid into a mixture, heating the mixture in the mixing section by a heater, detecting a pH value and a temperature of the mixture by a pH sensor and a temperature sensor respectively, adjusting an amount of hydrochloric acid supplied into the mixing section so that the rinse water has a predetermined pH value indicative of acidity, and energizing or de-energizing the heater so that the temperature of the mixture detected by the temperature sensor reaches a predetermined temperature, thereby producing the rinse water which has a temperature of not less than 70° C. and is acidic.

Abstract: A hard floor surface care process comprising a process of identifying, cleaning, polishing, and protecting manmade and natural stone hard floor surfaces having a single surface or multi-surface quality. The hard floor surface care process comprising an acid reactive or nonreactive hard floor surface identifying process; an emulsifying solution, agitating, and toweling cleaning process; a polishing process utilizing a lubricating solution with a polishing chemistry or pad, and a protecting process utilizing a protecting chemistry selected as a function of the identifying process.

Abstract: An endoscope cleaning/disinfecting apparatus for processing an endoscope in a cleaning tank using a diluted chemical obtained by diluting a chemical with hot water in a dilution tank of the present invention introduces the hot water into the cleaning tank immediately before processing, introduces the hot water into the dilution tank after the temperature of the hot water introduced into the cleaning tank falls within a specified temperature range, generates the diluted chemical, introduces the diluted chemical into the cleaning tank and processes the endoscope.

Abstract: In a cleaning method, a substrate having a pattern formed on the surface thereof can be cleaned by using a cleaning fluid, while preventing the pattern protrusions from being flattened when the cleaning fluid is removed or dried. The cleaning method includes the steps of: loading a substrate onto a loading platform inside a processing chamber; heating the substrate; and supplying a cleaning fluid onto the surface of the substrate. The substrate is heated in the substrate heating step so that the Leidenfrost phenomenon occurs and steam of the cleaning fluid is interposed between the substrate and droplets of the cleaning fluid supplied to the substrate in the cleaning fluid supply step.

Abstract: The embodiments describe methods for controlling the particles generated when cleaning and drying a wafer in a spin rinse dryer (SRD) module. In some embodiments, the substrate surface is cooled by dispensing deionized (DI) water across the surface of the substrate, while the substrate rests on the SRD chuck. In addition, a method for controlling the particles generated when sleeves in a processing module or SRD contact a substrate surface during a clamping operation or when the sleeves are removed from the substrate surface is provided. A bottom edge or lip of the sleeves and/or the surface of the wafer contacting the sleeve is wetted during clamping/unclamping operations. Alternatively, the substrate may be wetted prior to clamping/unclamping operations.

Abstract: A quartz window with an interior plenum is operable as a shutter or UV filter in a degas chamber by supplying the plenum with an ozone-containing gas. Pressure in the plenum can be adjusted to block UV light transmission into the degas chamber or adjust transmittance of UV light through the window. When the plenum is evacuated, the plenum allows maximum transmission of UV light into the degas chamber.

Abstract: Improved methods for stripping photoresist and removing etch-related residues from dielectric materials are provided. In one aspect of the invention, methods involve removing material from a dielectric layer using a hydrogen-based etch process employing a weak oxidizing agent and fluorine-containing compound. Substrate temperature is maintained at a level of about 160° C. or less, e.g., less than about 90° C.

Abstract: A surface treatment method of a metal member according to an embodiment of the invention includes removing an oily substance on the metal member by using gas-liquid two fluids that are obtained by boiling heated and pressured water under ordinary pressure. A surface treatment device of a metal member for removing an oily substance on the metal member includes self-generation two fluids production means for producing gas-liquid two fluids by boiling heated and pressured water under ordinary pressure, and a surface treatment room carrying out a surface treatment by bringing the self-generation two fluids into contact with the metal member.

Abstract: A method for cleaning containers, in particular bottles of glass or plastics, and a cleaning machine with at least one cleaning medium, with the containers cleaned at least in one station preferential for the cleaning result and/or in a procedure step with at least essentially chemical-free cleaning media. The cleaning medium is advantageously a granular material, in particular granular ice, carried under pressure with compressed air or compressed water. The cleaning machine suited for carrying out the method includes downstream of an unpacking and presoaking station, a pre-cleaning station with a high pressure water blasting pre-cleaning section, and subsequently an intensive cleaning station with at least one intensive cleaning section to which a pressure blasting system for chemical-free, granular material and a carrier medium are associated, and a disinfection station following the intensive cleaning station.

Abstract: A dry cleaning method of a substrate processing apparatus includes forming a metal oxide by oxidizing a metal film adhered to the inside of a processing chamber of the substrate processing apparatus; forming a complex by reacting the metal oxide with ?-diketone; and sublimating the complex to be removed. A cleaning gas containing oxygen and ?-diketone is supplied into the processing chamber while heating the inside of the processing chamber. A flow rate ratio of oxygen to ?-diketone in the cleaning gas is set such that a formation rate of the metal oxide is lower than a formation rate of the complex.

Abstract: A method for cleaning plated polished disks used in hard drive media is provided. The method includes positioning plated polished disks in a first batch scrubber having multiple first brushes, wherein each of the plated polished disks is positioned between two of the first brushes, and scrubbing the plated polished disks with the first brushes. The method further includes positioning the plated polished disks scrubbed in the first batch scrubber in a second batch scrubber having multiple second brushes, wherein each of the plated polished disks is positioned between two of the second brushes, and scrubbing the plated polished disks with the second brushes.

Abstract: A hard floor surface care process comprising a process of identifying, cleaning, polishing, and protecting manmade and natural stone hard floor surfaces having a single surface or multi-surface quality. The hard floor surface care process comprising an acid reactive or nonreactive hard floor surface identifying process; an emulsifying solution, agitating, and toweling cleaning process; a polishing process utilizing a lubricating solution with a polishing chemistry or pad, and a protecting process utilizing a protecting chemistry selected as a function of the identifying process.

Abstract: A teat cup cleaning device comprises a heating chamber provided with a discharge outlet that is closable by a valve and arranged for connection to a teat cup. A filling device is arranged for filling the heating chamber with an amount of cleaning liquid and retaining a given quantity of gas. The chamber is provided with a heating arrangement arranged to heat the contents of the heating chamber to a temperature T higher than the boiling point Tk of the cleaning liquid at ambient pressure. On operation of the valve superheated cleaning liquid is discharged to clean a teat cup.

Abstract: A dishwasher with a closed loop condenser having a moist air conduit, a dry air conduit having a portion in overlying relationship with a portion of the moist air conduit, wherein the overlying portions of the moist air conduit and the dry air conduit form a heat exchanger, and a controllable gate for selectively introducing, exhausting, or redirecting air relative to the condenser.

Abstract: A quartz window with an interior plenum is operable as a shutter or UV filter in a degas chamber by supplying the plenum with an ozone-containing gas. Pressure in the plenum can be adjusted to block UV light transmission into the degas chamber or adjust transmittance of UV light through the window. When the plenum is evacuated, the plenum allows maximum transmission of UV light into the degas chamber.

Abstract: Disclosed is a method for drying a plate-like article; the method including rinsing with an aqueous rinsing liquid with subsequent rinsing with an organic solvent, wherein the organic solvent has a water content of below 20 mass-% wherein the organic solvent is supplied at a solvent temperature, which is at least 30° C. and not higher than 60° C.

Abstract: Disclosed is a supercritical processing apparatus and a supercritical processing method for suppressing the pattern collapse or the injection of material constituting a processing liquid into a substrate. A processing chamber receives a substrate subjected to a processing with supercritical fluid, and a liquid supply unit supplies a processing liquid including a fluorine compound to the processing chamber. A liquid discharge unit discharges the supercritical fluid from the processing chamber, a pyrolysis ingredient removing unit removes an ingredient facilitating the pyrolysis of a liquid from the processing chamber or from the liquid supplied from the liquid supply unit, and a to heating unit heats the processing liquid including a fluorine compound of hydrofluoro ether or hydrofluoro carbon.

Abstract: A teat cup cleaning device having a heating chamber, provided with a discharge which is closable by a valve, and arranged for connection to a teat cup. A filling device is provided for filling the heating chamber with an amount of cleaning liquid, and a heating arrangement is arranged to heat the contents of the heating chamber to a temperature T higher than the boiling point Tk of the cleaning liquid at ambient pressure. The valve opens in this situation to deliver the heated cleaning liquid to the teat cup. The teat cup cleaning device also comprising a connecting line between a liquid supply and the discharge.

Abstract: The invention relates to a method for removing at least part of at least one layer of a composite coating that is formed of fibers and at least one resin that is present on the surface of the body of a gas cartridge. In said method, at least one liquid nitrogen stream is dispensed at a temperature less than ?100 DEG C at a pressure of at least 00 bars upon contact with said coating so as to remove at least part of said coating layer present on the body of the gas cartridge.

Abstract: A method for cleaning the surface of a silicon substrate, covered by a layer of silicon oxide includes: a) exposing the surface for 60 to 900 seconds to a radiofrequency plasma, generated from a fluorinated gas, to strip the silicon oxide layer and induce the adsorption of fluorinated elements on the substrate surface, the power density generated using the plasma being 10 mW/cm2 to 350 mW/cm2, the fluorinated gas pressure being 10 mTorrs to 200 mTorrs, and the substrate temperature being lower than or equal to 300° C.; and b) exposing the surface including the fluorinated elements for 5 to 120 seconds to a hydrogen radiofrequency plasma, to remove the fluorinated elements from the substrate surface, the power density generated using the plasma being 10 mW/cm2 to 350 mW/cm2, the hydrogen pressure being 10 mTorrs to 1 Torr, and the substrate temperature being lower than or equal to 300° C.

Abstract: A process is provided for removing polymeric fouling on process equipment surfaces to restore the efficiency of such equipment. This is accomplished by contacting the fouled equipment with a solvent comprising at least one non-aromatic hydrocarbon compound, or a mixture of one or more non-aromatic organic compounds and one or more aromatic hydrocarbon compounds, for a period of time sufficient to remove the polymeric fouling.

Abstract: A method and apparatus for providing multiple spray zones to different subportions of a silverware basket within the wash chamber of a dishwasher.

Abstract: Method and apparatus for removing residues of hazardous materials from vapor in a tank (1), wherein such a vapor is heated, passed outside the tank and subsequently cooled and the remaining dry vapor is recirculated, characterized in that a) said vapor is heated to a temperature of at least 5° C. above the melting point and below the self ignition point of the hazardous material, b) the vapor mixture thus formed is passed by means of a pump (3) from the tank through a discharge unit to a recovery unit, c) is cooled to a temperature of at least 5° C. lower and above the melting point of the hazardous material in a recovery unit, d) the liquid components of the vapor are recovered and the dry gas mixture is recirculated to the tank after reheating to the desired temperature, e) said recirculation being repeated as required.

Abstract: A method for cleaning a diffusion barrier over a gate dielectric of a metal-gate transistor over a substrate is provided. The method includes cleaning the diffusion barrier with a first solution including at least one surfactant. The amount of the surfactant of the first solution is about a critical micelle concentration (CMC) or more. The diffusion barrier is cleaned with a second solution. The second solution has a physical force to remove particles over the diffusion barrier. The second solution is substantially free from interacting with the diffusion barrier.

Abstract: Embodiments of the current invention describe a cleaning solution for the removal of high dose implanted photoresist, along with methods of applying the cleaning solution to remove the high dose implanted photoresist and combinatorially developing the cleaning solution.

Abstract: There is provided a method for exchanging an atmosphere of a vacuum chamber of a processing apparatus configured to process a substrate under a vacuum environment. The method includes the steps of holding the substrate using a holding unit provided in the vacuum chamber, and exchanging the atmosphere of the vacuum chamber through exhaustion or air supply, wherein the exchanging step maintains a pressure of the vacuum chamber in a range between 10 Pa and 10000 Pa for a period between 10 seconds and 600 seconds while controlling a temperature of a dust collection unit provided in the vacuum chamber lower than a temperature of the substrate.

Abstract: A method for cleaning a processing chamber that includes heating an inner surface of the processing chamber to a first temperature. The first temperature can be sufficient to cause a first species to become volatile. The first species can be one of several species deposited on the inner surface. A cleaning chemistry is injected into the processing chamber. The cleaning chemistry can be reactive with a second one of the species to convert the second species to the first species. The volatilized first species can also be output from the processing chamber. A system for cleaning the process chamber is also described.

Abstract: The present invention relates to the use of at least one alkanesulfonic acid of formula R—SO3H, in which R represents a saturated, linear or branched, hydrocarbon chain containing 1 to 4 carbon atoms, as agent for cleaning cement, mortar, concrete, lime, laitance and other derived products. The invention also relates to a method of cleaning cement, mortar, concrete, lime, laitance and other derived products using at least one alkanesulfonic acid.

Abstract: A resist removing device 1 functions to remove a resist from a substrate while preventing occurrence of popping phenomenon and at the same time attains reduction in cost of energy for the resist removing and has a simplified constitution. The resist removing device 1 is equipped with a chamber 2 for containing therein a substrate 16 (for example, a substrate having a high-doze ion implanted resist), and with a pressure below the atmospheric pressure, the chamber 2 is fed with ozone gas, unsaturated hydrocarbons and water vapor. The ozone gas may be an ultra-high concentrated ozone gas that is produced by subjecting an ozone containing gas to a liquefaction-separation with the aid of a vapor pressure difference and then vaporizing the liquefied ozone. For cleaning the substrate 16 thus treated, it is preferable to use ultra-pure water. The chamber 2 is equipped with a susceptor 15 for holding the substrate 16. The susceptor 15 is heated to a temperature of 100° C. or below.

Abstract: A cleaning apparatus comprises a container configured to hold an article to be cleaned, a cleaning solvent dispenser configured to supply a cleaning solvent to the container, an energy generator configured to provide thermal energy to an interior of the container; and a control device in communication with the energy generator and configured to select thermal energy sufficient to sublimate the particles. The cleaning solvent comprises a solvent and nanofabricated particles dispersed therein. The control device controls the energy generator to provide thermal energy to the cleaning solvent in container in which the article is submerged in order to cause sublimation of the particles.

Abstract: Disclosed are cleaning solvents and cleaning methods for metallic compounds deposited on the equipment that supplies organometallic compounds to the manufacturing tool in the photovoltaic industry or the semiconductor industry. The cleaning solvents and the cleaning methods disclosed not only selectively remove the metallic compound without corroding the equipment, but also improve the ordinary cleaning process. Moreover, the cleaning solvents and the cleaning methods disclosed improve maintenance costs for the supply system because the equipment may be cleaned without being detached from the supply system.

Abstract: A substrate processing method includes a cleaning processing step, a mixed organic solvent supplying step, and a fluorine organic solvent supplying step. The cleaning processing step is a step of cleaning a main surface of a substrate by supplying deionized water to the substrate. The mixed organic solvent supplying step is a step of supplying a fluid of a mixed organic solvent to the main surface of the substrate after the cleaning processing step. The fluid of the mixed organic solvent contains a fluid of a water-soluble organic solvent and a fluid of a fluorine organic solvent having a smaller surface tension than that of the deionized water and a lower water solubility than that of the fluid of the water-soluble organic solvent. The fluorine organic solvent supplying step is a step of supplying the fluid of the fluorine organic solvent to the main surface of the substrate without supplying the fluid of the water-soluble organic solvent after the mixed organic solvent supplying step.

Abstract: A drain port and an exhaust port arranged at the bottom of a cup surrounding a substrate holding unit. A drainage tray is arranged below the cup so as to cover the moving area of the drain port when the substrate holding unit and the cup move in X-directions and Y-directions. An exhaust unit is arranged at a position corresponding to the position of the exhaust port of the cup when the substrate holding unit is in its spin-drying position. The exhaust unit is connected to the exhaust port to suck the interior of the cup when the spin-drying of the substrate is executed. The use of a flexible tube which is always connected to the exhaust port is no longer necessary.

Abstract: Embodiments of the present disclosure include cleaning processes, cleaning machines, and methods of preventing acidification of a cleaning composition in a cleaning process. The cleaning process includes contacting an article having contaminants with a cleaning composition to remove the contaminants from the article, where the cleaning composition comes to have acidic components as a result of contacting the article with the cleaning composition, and where at least 85 percent by weight, based on a total weight of the cleaning composition, of the cleaning composition is an organic solvent, collecting the cleaning composition with the contaminants and the acidic components, separating the contaminants from the cleaning composition (114), and passing the cleaning composition with the acidic components over an ion exchange resin (125) to remove the acidic components from the cleaning composition.

Abstract: Semiconductor device fabrication equipment performs a PEOX (physical enhanced oxidation) process, and includes a remote plasma generator for cleaning a process chamber of the equipment. After a PEOX process has been preformed, a purging gas is supplied into the process chamber to purge the process chamber, and the remote plasma generator produces plasma using a first cleaning gas. Accordingly, a reactor of the remote plasma generator is cleaned by the first cleaning gas plasma. Subsequently, the purging gas is supplied to purge the process chamber, and the remote plasma generator produces plasma using a second cleaning gas to remove the first cleaning gas plasma from the remote plasma generator and the process chamber. Finally, full flush operations are performed to remove any gases remaining in the process chamber.

Abstract: A method for manufacturing a semiconductor device includes the step of conducting a cleaning process for a wafer formed with copper wiring lines to remove contaminations produced on a back surface of the wafer. The cleaning process is conducted by injecting onto the back surface of the wafer an etchant for removing contaminations and simultaneously injecting onto a front surface of the wafer a reductant containing hydrogen.

Abstract: After a water film is formed on a wafer front surface in a chamber, the water film is supplied sequentially with an oxidizing component of an oxidation gas, an organic acid component of an organic acid mist, an HF component of an HF gas, the organic acid mist, and the oxidizing component of the oxidation gas. As a result, the HF component and the organic acid component provide cleaning effect on the wafer surface, and a concentration of the cleaning components in the water film within a wafer surface can be even.

Abstract: Semiconductor processing compositions for use with silicon wafers having an insulating layers and metallization layers on the wafers comprising water and one or more Troika acids which is also referred to as ?,?-disubstituted trifunctional oximes or ?-(Hydroxyimino) Phosphonoacetic acids, their salts, and their derivatives.

Abstract: A method to remove deposits containing magnetite and copper from a container, particularly from a steam generator of a nuclear power plant. In a first step, the container is treated using an alkaline cleaning solution containing a complexing agent forming a soluble complex with iron ions, a reducing agent, and an alkalizing agent. In a second step a further complexing agent forming a more stable complex with iron III ions than the complexing agent used in the first step and an oxidant are added to the cleaning solution of the first step present in the container.

Abstract: Disclosed is a polycrystalline silicon washing apparatus that sequentially immerses polycrystalline silicon into a plurality of acid baths each of which is filled with an acid to wash the polycrystalline silicon. The temperatures of the acids in the acid baths are set such that the temperature of the acid in a later acid bath of adjacent acid baths is equal to or lower than that of a former acid bath and the temperature of the acid in the last acid bath is lower than that of the acid in the first acid bath. Each of the acid baths is provided with a temperature adjusting unit that controls the temperature of the acid at a constant value.

Abstract: A cleaning method of cleaning a surface of a substrate that is processed by a developing process. The method includes pouring a cleaning liquid onto a central part of the substrate. A dry area that is not wetted with the cleaning liquid is created in a central part of the substrate by stopping pouring the cleaning liquid or by shifting a cleaning liquid pouring position to which the cleaning liquid is poured from the central part while the substrate holding device is rotating. The dry area is expanded outward from the central part of the substrate by rotating the substrate holding device at a rotating speed not lower than 1500 rpm without pouring the cleaning liquid onto the dry area. The cleaning liquid is poured onto an outer area contiguously surrounding the dry area on the surface of the substrate.

Abstract: This substrate processing apparatus supplies wafers W accommodated in a closed processing container 10 with ozone gas and steam for processing the wafers W. The apparatus includes an ozone-gas generator 40 for supplying the ozone gas into the processing container 10, a steam generator 30 for supplying the steam into the processing container 10 and a steam nozzle 35 arranged in the processing container 10 and connected to the steam generator 30. The steam nozzle 35 is equipped with a nozzle body 35a having a plurality of steam ejecting orifices 35f formed at appropriate intervals and a heater 35h for preventing dewdrops of the steam from being produced in the nozzle body 35a. Consequently, it is possible to prevent the formation of dewdrops of solvent steam, which may produce origins of particles in the closed processing container, unevenness in cleaning (etching), etc., and also possible to improve the processing efficiency.

Abstract: A method of removing paint from a plastic substrate at least partially coated with a paint coating by: providing at least one plastic substrate at least partially coated with a paint coating; providing a kit for a user to utilize to remove paint from the plastic substrate, which is at least partially coated with a paint coating; immersing the at least partially coated plastic substrate into first mix of components by the end user wherein the first mix of components further comprises water when the at least partially coated plastic substrates are immersed into the first mix of components; and rinsing the plastic substrate with water. The immersing and rinsing steps remove the paint coating from the plastic substrate.

Abstract: It relates to a method for removing a surfactant, organic materials and chlorine ions remained on the surface of metal nanoparticles, prepared on an organic solvent phase including a surfactant. The method for cleaning metal nanoparticles herein is efficient to remove organic materials or chlorine ions remained on the surface of the nanoparticles. Not less than 90% of impurities may be removed by this method. As a result, the thickness of a multi layer ceramic capacitor (MLCC) can be reduced and a packing factor can be improved so that it allows thinner multi layer ceramic capacitors and improved utilities of metal nanoparticles as fuel cell catalysts, hydrogenation reaction catalysts, alternative catalysts of platinum (Pt) in chemical reactions and the like.