Abstract: Methods for cleaning surface deposits, such as sulfidation deposits or dust particles, from a surface bounding an internal passage in a turbine engine component. The surface deposits are cleaned by placing a halogen-containing organic compound, such as a fluorine-containing organic compound, into the internal passage and heating the component and organic compound to chemically react the halogen-containing species in the liquefied and boiling organic compound with the deposits. The temperature is further elevated to vaporize the chemically-modified deposits, which are moved by mass transport through the internal passage and out of the turbine engine component. An optional protective coating, such as a chromium or aluminum coating, may be applied to the cleaned surface of the internal passage.

Abstract: Some embodiments include methods of treating surfaces with aerosol particles. The aerosol particles may be formed as liquid particles, and then passed through a chamber under conditions which change the elasticity of the particles prior to impacting a surface with the particles. The change in elasticity may be an increase in the elasticity, or a decrease in the elasticity. The change in elasticity may be accomplished by causing a phase change of one or more components of the aerosol particles such as, for example, by at least partially freezing the aerosol particles, or by forming entrained bubbles within the aerosol particles. Some embodiments include apparatuses that may be utilized during treatment of surfaces with aerosol particles.

Abstract: The invention is directed to a method for at least partially removing a contamination layer (15) from an optical surface (14a) of an EUV-reflective optical element (14) by bringing a cleaning gas into contact with the contamination layer. In the method, a jet (20) of cleaning gas is directed to the contamination layer (15) for removing material from the contamination layer (15). The contamination layer (15) is monitored for generating a signal indicative of the thickness of the contamination layer (15) and the jet (20) of cleaning gas is controlled by moving the jet (20) of cleaning gas relative to the optical surface (14a) using this signal as a feedback signal. A cleaning arrangement (19 to 24) for carrying out the method is also disclosed. The invention also relates to a method for generating a jet (20) of cleaning gas and to a corresponding cleaning gas generation arrangement.

Abstract: A biodegradable acid cleaning composition for cleaning stainless steel, and other surfaces is disclosed. The composition comprises urea sulfate in combination with gluconic acid which serves as a corrosion inhibitor. The composition retains the cleaning and corrosion prevention properties of similar phosphoric acid solutions but is safe for the environment and is less expensive to produce. Applicants have surprisingly found that the traditionally alkaline corrosion inhibitor, gluconic acid, can work effectively in an acidic cleaning composition.

Abstract: A method and apparatus provide for automatically cleaning and decontaminating medical instruments. The method comprising the steps of: a) placing the medical instruments into a container after their use in a medical procedure; b) closing the container to seal the instruments inside whereby to prevent personnel contact with the instruments and any contaminants which might be thereon; c) inserting the sealed container into a washer/decontaminator and sealing the washer/decontaminator; d) the washer/decontaminator automatically opening the container and applying a washing fluid thereto to wash the instruments within the container; and e) the washer/decontaminator automatically applying a disinfectant to the container to disinfect the instruments whereby to allow safe handling thereof by personnel.

Abstract: A method of removing paint from a plastic substrate at least partially coated with a paint coating by: providing at least one plastic substrate at least partially coated with a paint coating; providing a kit for a user to utilize to remove paint from the plastic substrate, which is at least partially coated with a paint coating; immersing the at least partially coated plastic substrate into first mix of components by the end user wherein the first mix of components further comprises water when the at least partially coated plastic substrates are immersed into the first mix of components; and rinsing the plastic substrate with water. The immersing and rinsing steps remove the paint coating from the plastic substrate.

Abstract: The present invention relates to a method for cleaning polycrystalline silicon fragments to a metal content of <100 ppbw, wherein a polysilicon fraction is added to an aqueous cleaning solution containing HF and H2O2, this aqueous cleaning solution is removed and the polycrystalline fraction thereby obtained is washed with highly pure water and subsequently dried.

Abstract: A method for activating the surface of a base material and an apparatus thereof, which is suited to be utilized for pretreatment in electrochemical treatment such as, for example, electroplating or the like, in which the surface of a base material such as metal can be subjected to degreasing treatment and oxide film removing treatment simultaneously, efficiently and rationally, in which productivity can be enhanced and the equipment cost can be reduced, and in which a waste solution can be rationalized so that the solution can be reutilized and the environmental pollution can be prevented. A method for activating the surface of a base material in which the surface of a member to be treated is subjected to degreasing treatment or oxide film removing treatment. Pressurized carbon dioxide is dissolved in a predetermined quantity of water, thereby preparing an oxide film removing solution having a predetermined acidic concentration.

Abstract: In a process chamber of a substrate processing apparatus, such as an RTP apparatus, a carrier is placed and configured to carry out a contaminant that has been attached to it. In this state, a cleaning gas containing N2 and O2 is introduced into the process chamber, and cleaning is performed under conditions including a pressure of 133.3 Pa or less and a temperature of 700° C. to 1,100° C. This cleaning is repeatedly performed by sequentially replacing a plurality of carriers.

Abstract: A method of wet cleaning a surface is disclosed. The method of wet cleaning a surface of at least one material chosen from silicon, silicon-germanium alloys, A(III)/B(V)-type semiconductors and epitaxially grown crystalline materials, such as germanium, includes the following successive steps: a) the surface is brought into contact with an HF solution; b) the surface is rinsed with acidified, deionized water, then a powerful oxidizing agent is added to the deionized water and the rinsing is continued; c) optionally, step a) is repeated, once or twice, while optionally reducing the contacting time; d) step b) is optionally repeated, once or twice; and e) the surface is dried.

Abstract: A method of cleaning a microwave plasma applicator tube as described herein includes preparing a microwave plasma applicator for cleaning. A general cleaning of the plasma applicator tube is performed using an organic solvent wash and an ultrapure water wash. Selective cleanings of the tube are performed to remove selected contaminants. Such cleanings include a third wash with an alkaline cleaning solution, a fourth wash with an acidic cleaning solution and another wash using an ammonia and peroxide solution. The tube is rinsed using a sonicating wash performed in ultrapure water followed by drying. Also, the coil can be cleaned using acidic wash solution.

Abstract: A method for removing a mask layer and reducing damage to a patterned dielectric layer is described. The method comprises disposing a substrate in a plasma processing system, wherein the substrate has a dielectric layer formed thereon and a mask layer overlying the dielectric layer. A pattern is formed in the mask layer and a feature formed in the dielectric layer corresponding to the pattern as a result of an etching process used to transfer the pattern in the mask layer to the dielectric layer. The feature includes a sidewall with a first roughness resulting from the etching process. A process gas comprising CO2 and CO is introduced into the plasma processing system, and plasma is formed. The mask layer is removed, and a second roughness, less than the first roughness, is produced by selecting a flow rate of the CO relative to a flow rate of the CO2.

Abstract: The invention relates to methods and compositions for removing metal oxide soils from surfaces. The compositions include an anionic surfactant and a pH adjuster at an acidic pH. In one embodiment, the invention relates to a method of removing a metal oxide soil from a surface by (1) applying a use composition to the surface, the use composition having a pH adjuster in an amount sufficient to provide a use pH at or below 7, an anionic surfactant in an amount to remove a portion of the metal oxide soil, and a carrier, (2) removing the metal oxide soil from the surface with the use composition, and (3) rinsing the surface to remove the use composition and the metal oxide soil.

Abstract: A method of cleaning pipeline pigs of a material that is to be recycled includes providing a vessel having an interior. A manifold is placed within the vessel interior, the manifold having a plurality of openings. The vessel is filled with a solvent that is capable of dissolving the material to be recycled. The pipeline pig is placed in the vessel and above the manifold. A volume of gas is bubbled into the vessel via the manifold openings. These steps are repeated with multiple pigs in sequence so that the material to be recycled is concentrated over time within the vessel. Thereafter, the material that has accumulated within the vessel is recycled. The solvent is preferably a terpene blend with an ethoxylated alcohol. The material to be recycled is preferably paraffin and/or asphaltene.

Abstract: After semiconductor wafers are loaded into a reaction vessel, and ruthenium (Ru) film or ruthenium oxide film is formed, the interior of the reaction vessel is efficiently cleaned without contaminating the wafers. The interior of the reaction vessel is heated to a temperature of above 850° C. while the pressure inside the reaction vessel is reduced to, e.g., 133 pa (1 Torr)-13.3 Kpa (100 Torr), and oxygen gas is fed into the reaction vessel at a flow rate of, e.g., above 1.5 Lm, whereby the ruthenium film or the ruthenium oxide film formed inside the reaction vessel is cleaned off. In place of oxygen gas, active oxygen, such as O3, O* and OH*, etc. may be used.

Abstract: A method for washing and drying items in a dishwasher and a dishwasher are provided. After the dishwasher is placed in a program execution readiness state in which a given washing or drying program can be executed, a washing program and then a drying program are executed. In response to both an interruption of the drying program resulting in the dishwasher no longer being in a program execution readiness state and a thereafter following restoration of the dishwasher to its program execution readiness state, a parameter value is measured and the drying program is resumed if there is no predetermined deviation from a nominal value and, on the other hand, a fresh cycle of a washing program and a drying program is initiated in the event of a predetermined deviation.

Abstract: The present invention provides a method for removing niobium-rich second-phase-particle (SPP) deposits from zirconium-niobium alloy components. The method comprises washing a freshly pickled and rinsed zirconium-niobium alloy component with an acidified oxalic acid or ammonium oxalate washing solution. The method of the present invention results in a rapid, efficient and complete removal of surface SPP deposits from the zirconium-niobium alloy component without pitting, leaving behind a clean, shiny surface without the need to use water blasting or mechanical wiping operations.

Abstract: A cleaning agent for metal parts (e.g., steel articles) includes sodium hydroxide in an approximate amount of 15 wt % (percent by weight) to 25 wt %, sodium tripolyphosphate in an approximate amount of 6 wt % to 9 wt %, sodium metasilicate in an approximate amount of 48 wt % to 51 wt %, sodium dodecyl benzene sulfonate in an approximate amount of 2 wt % to 5 wt %, sodium carbonate in an approximate amount of 8 wt % to 11 wt %, and alkylphenol polyoxyethylene ether in an approximate amount of 1 wt % to 4 wt %.

Abstract: A process for removing paint from a plastic substrate that typically includes immersing and optionally agitating the painted plastic substrate in a first chemical fluid, removing the substrate from the first chemical fluid, typically immersing and optionally agitating the substrate in a second chemical fluid, removing the substrate from the second chemical fluid, optionally immersing and optionally agitating the substrate in a third chemical fluid, where the third chemical fluid typically includes substantially the same chemicals as the second chemical fluid, rinsing the substrate, and drying the substrate. The present invention also includes a method for recycling an initially painted plastic substrate.

Abstract: The present invention relates to an apparatus and method for removing a coating material from a predetermined first portion of a container, while retaining the coating on a second portion of the container, or alternatively applying a coating to a predetermined portion of a container or other apparatus.

Abstract: An upwardly directed gradient of dropping temperatures is controllably and sustainably created in a wet treatment tank between a cooled and face down workpiece (e.g., an in-process semiconductor wafer) and a lower down heat source. A thermal fluid upwell containing thermally collapsible bubbles is directed from the heat source to the face down workpiece. In one class of embodiments, bubble collapse energies and/or bubble collapse locations are controlled so as to avoid exposing delicate features of the to-be-treated surface to damaging forces. For example, rapid collapse of the thermally collapsible bubbles is caused to occur at a predefined safe distance away from the delicate work face of the workpiece so that the delicate work face is not damaged and yet treatment effective kinetic energies are coupled from the collapsing bubbles to the work face. In one class of embodiments the wet treatment includes ultracleaning of the work face.

Abstract: A substrate immersed in pure water held inside a processing bath disposed to a cleaning unit 1 and accordingly washed, as it bears an aqueous film on its surface, is transported by a substrate transportation mechanism 3 to a spin-processing unit 2. The substrate rotates in the spin-processing unit 2, thereby adjusting the thickness of the aqueous film on the substrate surface. As the aqueous film is then frozen, the volume of the aqueous film expands, adhesion between the substrates and particles adhering to the substrate surface becomes weak, or further the particles are separated from the substrate surface. The substrate transportation mechanism 3 transports thus frozen substrate to the cleaning unit 1 from the spin-processing unit 2, and the substrate is immersed in a processing liquid held inside the processing bath. The overflowing processing liquid thaws and removes the aqueous film, and particles on the substrate surface are discharged outside the substrate.

Abstract: Disclosed herein is a method of cleaning a photomask, which prevents haze from being generated on a surface of the photomask during a photolithography process. The photomask is heat treated to remove residual ions on a surface thereof and to induce curing and oxidation of Cr and MoSiON layers, thereby preventing diffusion of the ions. Etching of Cr and MoSiON layers due to a cleaning process is suppressed in order to significantly reduce a change in phase and transmissivity of optical properties of Cr and MoSiON.

Abstract: Described are methods of rinsing and processing devices such as semiconductor wafers wherein the device is rinsed with using a surface tension reducing agent; the method may include a subsequent drying step which preferably incorporates the use of a surface tension reducing agent during at least partial drying; and the method may be performed using automated rinsing equipment; also described are automated rinsing apparatuses useful with the method.

Abstract: A substrate treating apparatus includes a treating unit including a treating bath which a treating solution is supplied into and stored in and treating solution supply means for supplying the treating solution into the treating bath; and a drying unit including a drying bath into which fluid is supplied and injected and fluid supply means for supplying the fluid into the drying bath, wherein the fluid supply means includes a filter configured to filter the fluid before the fluid is supplied into the drying bath and a first heater configured to heat the filter. According to the substrate treating apparatus, the generation of particles caused by supplying solidified drying fluid into a drying bath is suppressed to treat a substrate without error. As a result, a production or yield increases.

Abstract: Process for the treatment of cork or a cork-based material particularly with a view towards extracting contaminating organic compounds, in which said cork or said cork-based material is put into contact with a dense fluid under pressure at a temperature of from 10 to 120° C. and at a pressure of from 10 to 600 bars. Manufacturing installation for parts made of cork or a cork-based material, such as bottle corks, comprising an installation for treatment or extraction by putting the said cork or the said material into contact with a dense fluid under pressure.

Abstract: A method for removing post-processing residues in a single wafer cleaning system is provided. The method initiates with providing a first heated fluid to a proximity head disposed over a substrate. Then, a meniscus of the first fluid is generated between a surface of the substrate and an opposing surface of the proximity head. The substrate is linearly moved under the proximity head. A single wafer cleaning system is also provided.

Abstract: Method for processing an article by contacting the article with a dense fluid. The article is introduced into a sealable processing chamber and the processing chamber is sealed. A dense fluid is prepared by introducing a subcritical fluid into a pressurization vessel and isolating the vessel, and then heating the subcritical fluid at essentially constant volume and essentially constant density to yield a dense fluid. At least a portion of the dense fluid is transferred from the pressurization vessel to the processing chamber, wherein the transfer of the dense fluid is driven by the difference between the pressure in the pressurization vessel and the pressure in the processing chamber, thereby pressurizing the processing chamber with transferred dense fluid. The article is contacted with the transferred dense fluid to yield a spent dense fluid and a treated article, and the spent dense fluid is separated from the treated article.

Abstract: In a method for processing a baking pan, the baking pan is placed in a solution including: water, N-Methyl-2-Pyrrolidone, Ethoxylate of nonylphenol, Monoethanolamine, Triethanolamine and Potassium hydroxide. The solution is heated to a temperature in a predefined temperature range. The baking pan is removed from the solution after a predefined period of time.

Abstract: A process for removing paint from a plastic substrate that typically includes immersing and optionally agitating the painted plastic substrate in a first chemical fluid, removing the substrate from the first chemical fluid, typically immersing and optionally agitating the substrate in a second chemical fluid, removing the substrate from the second chemical fluid, optionally immersing and optionally agitating the substrate in a third chemical fluid, where the third chemical fluid typically includes substantially the same chemicals as the second chemical fluid, rinsing the substrate, and drying the substrate. The present invention also includes a method for recycling an initially painted plastic substrate.

Abstract: Method of wet cleaning a surface of at least one material chosen from silicon, silicon-germanium alloys, A(III)/B(V)-type semiconductors and epitaxially grown crystalline materials, such as germanium, in which method the following successive steps are carried out: a) the surface is brought into contact with an HF solution; b) the surface is rinsed with acidified, deionized water, then a powerful oxidizing agent is added to the deionized water and the rinsing is continued; c) optionally, step a) is repeated, once or twice, while optionally reducing the contacting time; d) step b) is optionally repeated, once or twice; and e) the surface is dried. Process for fabricating an electronic, optical or optoelectronic device, such as a CMOS or MOSFET device, comprising at least one wet cleaning step using the said cleaning method.

Abstract: Ammonia-free, HF-free cleaning compositions for cleaning photoresist and plasma ash residues from microelectronic substrates, and particularly to such cleaning compositions useful with and having improved compatibility with microelectronic substrates characterized by sensitive porous and low-k to high-k dielectrics and copper metallization. The cleaning composition contain one or more non-ammonium producing, non-HF producing fluoride salt (non ammonium, quaternary ammonium fluoride salt) in a suitable solvent matrix.

Abstract: An apparatus for cleaning a semiconductor wafer and method for cleaning a wafer using the same wherein, the apparatus includes a chamber on which a wafer is mounted, a revolving chuck mounted in the chamber for supporting and fixing the wafer, a nozzle for spraying cleaning solution onto the wafer, a cover for covering an upper part of the chamber, and a light source. The cleaning solution, preferably one of ozone water, hydrogen water, or electrolytic-ionized water, may be heated for a short time and used to clean the wafer.

Abstract: The present invention is directed to a cleaning system and methods for cleaning tissue embedding molds. The cleaning system includes a cleaning vessel that holds a cleaning solution. The tissue processing molds are supported by a basket receptacle which is placed inside the cleaning vessel. Cleaning solution is supplied to the cleaning vessel through a supply line. Additional fluids are stored in a reservoir and may be mixed with the cleaning solution in the supply line. Cleaning solution drains from the cleaning vessel through a drain line. A controller controls the opening and closing of valves and the activation or deactivation of a heat source to operate a wash cycle, a rinse cycle, and a dry cycle.

Abstract: A process for pickling martensitic or ferritic stainless steel, preferably in the form of wires, tubes or rods, wherein the stainless steel is placed in contact with a pickling solution which has a temperature in the range 15 to 29° C. and contains 50 to 120 g/l of free sulfuric acid, 5 to 40 g/l of free HF and 5 to 40 g/l of Fe(III) ions. Such pickling may be incorporated into a sequential process, wherein the stainless steel is a) subjected to a treatment during which the oxidic coating is applied, preferably sand-blasting or metal-blasting, treatment with a molten salt or treatment with an aqueous permanganate/alkali metal hydroxide solution, b) pickled in accordance with the aforedescribed process, and c) post-treated with a passivating solution.

Abstract: Method for removing flux residue and defluxing residue from an article using a dense processing fluid and a dense rinse fluid is disclosed herein. In one embodiment, there is provided a method comprising: introducing the article comprising contaminants into a processing chamber; contacting the article with a dense processing fluid comprising a dense fluid, at least one processing agent, and optionally a cosolvent to provide a partially treated article; and contacting the partially treated article with a dense rinse fluid comprising the dense fluid and optionally the cosolvent to provide a treated article wherein an agitation source is introducing during at least a portion of the first and/or the second contacting step.

Abstract: Process for the treatment of cork or a cork-based material particularly with a view towards extracting contaminating organic compounds, in which said cork or said cork-based material is put into contact with a dense fluid under pressure at a temperature of from 10 to 120° C. and at a pressure of from 10 to 600 bars. Manufacturing installation for parts made of cork or a cork-based material, such as bottle corks, comprising an installation for treatment or extraction by putting the said cork or the said material into contact with a dense fluid under pressure.

Abstract: Methods and apparatus for cleaning hearing aid devices are disclosed. Drying is facilitated in hearing instruments through a novel combination of heater and desiccant in an essentially closed system. Greater efficiency is obtained by minimizing the volume of gas, e.g., air, requiring moisture extraction.

Abstract: An extraction cleaning machine comprising dispensing and recovery systems, the dispensing system including a system for generating heat with an exothermic reaction upon activation for heating the cleaning solution prior to dispensing of the cleaning solution onto a surface. The cleaning solution dispensing system comprises a cleaning solution reservoir to which the heat of the exothermic reaction can be added and a dispenser. The heat of the exothermic reaction can also be added in line to the cleaning solution between the cleaning solution reservoir and the dispenser. The recovery system includes a suction nozzle, a recovery tank and a vacuum source for drawing recovered liquid from the suction nozzle into the recovery tank. A method of cleaning a surface comprises the steps of heating a cleaning solution by an exothermic chemical reaction, applying the cleaning solution to the surface and recovering the cleaning solution from the surface.

Abstract: The present invention discloses a method for removing impurities from a porous material by flowing a supercritical fluid with or without a modifier therein over a to-be-cleaned porous material having pores at the nanometer level under suitable temperatures and pressures, so that the supercritical fluid migrates into the pores at the nanometer level and removes impurities entrapped therein. The method of the present invention uses the physical and chemical properties of the supercritical fluid and optionally the modifier to clean the porous material without using an acid or alkaline solvent. The method of the present invention conserves water, and is both a highly efficient and environmentally friendly cleaning technique.

Abstract: Apparatus (20) for cleaning a window (24) of a vehicle (22), including a vessel (28) having an inlet (32) through which a washing fluid is received from a reservoir and an outlet (34) through which the fluid is discharged for cleaning the window. There is a heating (50) for heating the fluid in the vessel, which element preheats the vessel before the washing fluid is received therein, whereby at least an initial quantity of the fluid is rapidly heated and discharged from the vessel.

Abstract: The present invention relates generally to cleaning systems, and more specifically to substrate cleaning systems, such as textile cleaning systems, utilizing an organic cleaning solvent and a pressurized fluid solvent. However, unlike conventional cleaning systems, a conventional drying cycle is not necessary. Particularly, the present invention provides a process for cleaning substrates by cleaning the substrates with an organic solvent in absence of liquid carbon dioxide, and removing the organic solvent from the substrates using a pressurized fluid solvent.

Abstract: A non-destructive and simple method for cleaning a new or used electrostatic chuck comprises a wet cleaning process, which removes contaminants deposited on a surface of the electrostatic chuck.

Abstract: A process for removing paint from a plastic substrate that typically includes immersing and optionally agitating the painted plastic substrate in a first chemical fluid, removing the substrate from the first chemical fluid, typically immersing and optionally agitating the substrate in a second chemical fluid, removing the substrate from the second chemical fluid, optionally immersing and optionally agitating the substrate in a third chemical fluid, where the third chemical fluid typically includes substantially the same chemicals as the second chemical fluid, rinsing the substrate, and drying the substrate. The present invention also includes a method for recycling an initially painted plastic substrate.

Abstract: The invention provides a method for the removal of contaminating materials from pipework, the contaminating materials comprising deposits on the pipework which cause a reduction in the effective internal diameter of the pipes and thereby effect a reduction in the rate of flow of a fluid through the pipework, the method comprising treating the contaminating materials with at least one carbamate salt. The methods is also suitable for the treatment of contaminating materials which have a particularly deleterious effect on fluid flow and comprise partial or total blockages of the pipework. The carbamate is preferably in the form of an aqueous solution, and a preferred carbamate salt is ammonium carbamate. The treatment may be carried out in the presence of an additive such as caesium carbonate or ammonium bicarbonate. Optionally the treatment may be accompanied by a pre-treatment or post-treatment with aid, this being followed by a water wash.

Abstract: The present invention provides a method and process for removing adherent molten metal from a surface by applying a non-wetting agent for the metal to the surface or to the adherent molten metal. The non-wetting agent may be a pressurized fluid or applied by a pressurized fluid.

Abstract: A method that includes rotating a wafer, heating the wafer, applying a first liquid through one or more nozzles to a center of a topside of the wafer that is cooler than the heated wafer, and translating the one or more nozzles to an outer diameter edge of the wafer.

Abstract: Disclosed is a method and solvent composition capable of removing iron oxide deposits from the surface of titanium components without substantially damaging the underlying titanium component. Iron oxide deposits may be removed from the surface of a titanium component by contacting the titanium component with the solvent composition of the invention. The solvent composition may then be removed from contact with the titanium component to obtain a recyclable solvent composition which is recycled into repeated contact with the titanium component. The solvent composition comprises an aqueous mixture of an organic acid and a hydrohalide acid.

Abstract: The invention relates to a method of low temperature cleaning and applying an antimicrobial treatment to food and beverage plant equipment. In addition, the method includes carbon dioxide compatible chemistry. The method may be achieved through a multi-step method.

Abstract: A method of automatic cleaning of cooking cavities of cooking equipment for food processing includes the introduction of steam at a temperature of at least 100.deg. C. from a supply line and nozzle into a cooking cavity for a time period depending on the degree of disinfection desired. The cooking cavity is rinsed with the steam condensate; and the supply line and nozzle are flushed with demineralized water.