Abstract: A process for removing carbonaceous deposits on surfaces of catalysts and plant parts by treating the deposits with a superheated stream of steam admixed at least temporarily with an oxygenous gas is provided, which involves, in each case monitoring the offgas CO2 content after condensation of the steam, at a temperature of at least 300° C.: (a) treating the carbonaceous deposits with superheated steam at a temperature of at least 300° C. until the CO2 content of the offgas has exceeded a maximum; (b) then, with further supply of superheated steam, commencing oxygen supply, the amount of oxygen supplied being adjusted such that the CO2 content in the offgas decreases further until it has fallen to a value of <1% by volume; and then (c) ending the supply of superheated steam and passing an oxygenous gas over remaining amounts of carbonaceous deposits until the deposits have been virtually removed.

Abstract: A cleaning method of cleaning a joint surface of a processing target substrate separated from a superposed substrate, while the processing target substrate is placed inside an annular frame and held by a tape bonded to a surface of the frame and a non-joint surface of the processing target substrate, the cleaning method including: a placement step of placing a cleaning jig to face the processing target substrate such that a supply surface of the cleaning jig for supplying a solvent for the adhesive onto the joint surface of the processing target substrate covers the joint surface and a distance between the supply surface and the joint surface is a predetermined distance; and a cleaning step of then supplying the solvent between the supply surface and the joint surface and diffusing the supplied solvent over the joint surface by a surface tension.

Abstract: The present invention discloses a method of washing ware, in particular in an automatic domestic or institutional ware washing machine, using a detergent composition containing a cationic starch. This eliminates the need for a surfactant in the rinse step. The cationic starch provides a layer of cationic starch on the ware so as to afford a sheeting action in an aqueous rinse step without any added rinse agent.

Abstract: There is provided a liquid processing apparatus capable of efficiently processing a pattern formation surface of a wafer, while preventing diffusion of a chemical-liquid atmosphere which might possibly occurs during a chemical-liquid process.

Abstract: One exemplary embodiment can be a process for removing one or more scale deposits formed on a surface. The process can include contacting the surface with a composition for a period of time sufficient to remove the scale deposits that comprise coke or metal sulfides or mixtures thereof. Generally, the composition includes an effective amount of an organic acid and/or a salt thereof, and an effective amount of an oxidizing agent.

Abstract: A substrate is placed on a plurality of support pins within an opening of a carrier, such that a gap exists between the radial perimeter of the substrate and the carrier. The substrate and carrier are passed in a linear direction through a meniscus generated between respective faces of upper and lower proximity heads. Each of the upper and lower proximity heads includes a plurality of meniscus nozzles configured to supply liquid to the meniscus. A plurality of vacuum ports are formed on the respective face of each of the upper and lower proximity heads and are arranged to completely surround the plurality of meniscus nozzles. Liquid of the meniscus is evacuated from the gap between the radial perimeter of the substrate and the carrier so as to reduce a size and a frequency of at least one of entrance or exit marks on the substrate.

Abstract: A rotary atomizing head (125, 226) is rotatably provided on a leading end of a coating gun (115, 215). The rotary atomizing head (125, 226) is provided with a central paint discharge opening (141, 241) provided in a vicinity of a rotation axis (137, 237) of the rotary atomizing head (125, 226) and an outer paint discharge opening (142, 242) having a central axis (148, 248) inclined relative to the rotation axis (137, 237). A cleaning nozzle (124, 225) has an axis (127, 228) which aligns with the central axis (148, 248) of the outer paint discharge opening (142, 242) when the coating gun (115, 215) is cleaned.

Abstract: A method of warewashing for the optimization of cleaning is obtained, excess detergent usage is minimized and further where deposit of film on ware is reduced in an alternating acidic and alkaline cleaning method. According to the invention, the type of acid and alkalinity used, or acid salt formed upon application of the acidic and alkaline washes is important to cleaning performance and phosphate or silicates should be avoided.

Abstract: A method for processing a substrate is provided. The method includes generating a controlled meniscus using a proximity head. The proximity head has a face in close proximity to a surface of the substrate, and the face includes a substantially flat surface. The controlled meniscus is generated by delivering a chemical to the meniscus through discrete nozzles formed in the face of the proximity head. The method includes moving the proximity head over the substrate so that an area of contact between the meniscus and the surface of the substrate moves from a first location to a second location on the substrate. The moving of the proximity head causes a chemical remainder to be left behind on the surface of the substrate at the first location. The chemical remainder being a layer of the chemical from the meniscus that adheres to the surface of the substrate.

Abstract: In a liquid processing apparatus configured to remove, from a substrate including a first film and a second film formed above the first film, the first film and the second film, a first chemical-liquid supply part supplies, to a substrate W, a first liquid for dissolving the first film, a second chemical-liquid supply part supplies a second chemical liquid for weakening the second film, and a fluid supply part serving also as an impact giving part gives a physical impact to the second film so as to break the second film and supplies a fluid for washing away debris of the broken second film. A control device controls the respective parts such that, after the second liquid has been supplied and then the fluid has been supplied from the fluid supply part, the first chemical liquid is supplied.

Abstract: A technique for cleaning a tea concentrate brewing mechanism including heat exchanger tubing and concentrate receptacles employs a safe and effective aqueous chlorine dioxide solution. A chemical dispensing unit employs a venturi body that mixes a sodium chlorite sanitizer with a weak-acid activator injected into the water flow. Preset water-flow rate metering regulation draws in equal amounts of sanitizer and activator. The chemicals are made up in respective concentrations so that the same volume is required of each one. The cleansing solution may be flowed through the brewing mechanism or sprayed on surfaces to be cleaned.

Abstract: A substrate processing method includes: supplying a fluid to a resist on a substrate after an ion implantation in which the resist is used as a mask; and supplying a stripping liquid to the resist for stripping the resist after the supplying the fluid. A cured layer is formed in a surface of the resist in the ion implantation. The fluid is purified water or a mixed fluid of purified water and an inert gas. A volume flow rate of the purified water is not less than 1/400 of a volume flow rate of the inert gas when the mixed fluid is supplied as the fluid.

Abstract: A method is used for removing a metal contaminant deposited on a quartz member selected from the group consisting of a reaction tube, wafer boat, and heat-insulating cylinder of a vertical heat processing apparatus for a semiconductor process. The method includes obtaining the quartz member unattached to the vertical heat processing apparatus; then, performing diluted hydrofluoric acid cleaning of cleaning the quartz member by use of diluted hydrofluoric acid; then, performing first purified water cleaning of cleaning the quartz member by use of purified water; then, performing hydrochloric acid cleaning of cleaning the quartz member by use of hydrochloric acid; and then, performing second purified water cleaning of cleaning the quartz member by use of purified water.

Abstract: A heat exchanger may be cleaned by introducing compressed nitrogen and a flushing composition through an injection device.

Abstract: A megasonic cleaning method and a megasonic cleaning apparatus are provided. Microcavitation bubbles may be formed by applying an electromotive force to a cleaning solution using a megasonic energy in a separate room from an object to be cleaned. The microcavitation bubbles having a stable oscillation among the formed microcavitation bubbles may be moved to the object to be cleaned. A surface of the object to be cleaned may be cleaned using the microcavitation bubbles having the stable oscillation. Particles attached onto the surface of the object to be cleaned may be effectively removed while preventing pattern damage.

Abstract: A cleaning and drying-preventing method including: positioning a nozzle in a container such that a funnel-like inner circumferential surface of the container is located around a periphery of a distal end of the nozzle; sucking a liquid in the nozzle to retract a level of the liquid to a side of a supply passage; supplying a solvent into the container to form a swirl flow of the solvent turning around the distal end of the nozzle, and cleaning the nozzle by the swirl flow; supplying a solvent into the container to form a liquid pool of the solvent; and further retracting the level of the liquid in the nozzle to the side of the supply passage. A liquid layer, an air layer, and a solvent layer are formed in the nozzle in this order from the side of the supply passage, to prevent drying of the liquid in the nozzle.

Abstract: A method of cleaning cylinders (5) and/or rolls (5), e.g., working rolls (5) in a rolling stand, wherein a liquid is sprayed onto the cylinders (5) at high pressure through several nozzles (D1-Dn) of a number of nozzles (D1-Dn) stationary arranged in and/or on a nozzle beam (10), with at least one on-off valve being associated with each nozzle (D1-Dn), and one or several nozzle(s) (D1-Dn) are sequentially switched on and off one after another starting from one end of the nozzle beam.

Abstract: Disclosed is to supply processing liquid having a predetermined flow rate and concentration to substrate processing units of a substrate processing apparatus with high accuracy. The substrate processing apparatus, which processes substrates in the substrate processing units using the processing liquid supplied from a processing liquid supply part, sequentially carries the substrates to the respective substrate processing units, and controls the processing start time such that if the flow rate of the processing liquid used in one of the substrate processing units is less than the control flow rate that is controllable at the processing liquid supply part, the substrates are carried to the plurality of substrate processing units until a flow rate of the processing liquid reaches the control flow rate that is controllable at the processing liquid supply part and then the processing liquid is used simultaneously in the plurality of the substrate processing units.

Abstract: Provided is a method and system for increasing etch rate and etch selectivity of a masking layer on a substrate in an etch treatment system, the etch treatment system configured for single substrate processing. The method comprises obtaining a supply of steam water vapor mixture at elevated pressure, obtaining a supply of treatment liquid for selectively etching the masking layer over the silicon or silicon oxide at a set etch selectivity ratio, placing the substrate into the etch processing chamber, combining the treatment liquid and the steam water vapor mixture, and injecting the combined treatment liquid and the steam water vapor mixture into the etch processing chamber, wherein the flow of the combined treatment liquid and the steam water vapor mixture is controlled to maintain a set etch rate and a set etch selectivity ratio of the masking layer to silicon or silicon oxide.

Abstract: A method for removing a hardened photoresist from a semiconductor substrate. An example method for removing a hardened photoresist layer from a substrate comprising a low-? dielectric material preserving the characteristics of the low-?dielectric material includes: a)—providing a substrate comprising a hardened photoresist layer and a low-? dielectric material at least partially exposed; b)—forming C?C double bonds in the hardened photoresist by exposing the hardened photoresist to UV radiation having a wavelength between 200 nm and 300 nm in vacuum or in an inert atmosphere; c)—breaking the C?C double bonds formed in step b) by reacting the hardened photoresist with ozone (O3) or a mixture of ozone (O3) and oxygen (O2) thereby fragmenting the hardened photoresist; and d)—removing the fragmented photoresist obtained in step c) by wet processing with cleaning chemistries.

Abstract: The present invention relates to a wafer cleaning and a wafer bonding method using the same that can improve a yield of cleaning process and bonding property in bonding the cleaned wafer by cleaning the wafer using atmospheric pressure plasma and cleaning solution. The wafer cleaning method includes the steps of providing a process chamber with a wafer whose bonding surface faces upward, cleaning and surface-treating the bonding surface of the wafer by supplying atmospheric pressure plasma and a cleaning solution to the bonding surface of the wafer, and withdrawing out the wafer from the process chamber.

Abstract: A method for cleaning a diffusion barrier over a gate dielectric of a metal-gate transistor over a substrate is provided. The method includes cleaning the diffusion barrier with a first solution including at least one surfactant. The amount of the surfactant of the first solution is about a critical micelle concentration (CMC) or more. The diffusion barrier is cleaned with a second solution. The second solution has a physical force to remove particles over the diffusion barrier. The second solution is substantially free from interacting with the diffusion barrier.

Abstract: A rinsing and drying apparatus of a clinical analyzer probe drain station is provided. The rinsing and drying apparatus has a group of nozzles that are offset from a longitudinal axis of a probe passage and may be inclined and oriented to provide tangentially oriented fluid-jet trajectories exiting into the sample probe passage. The offset nozzles, nozzle orientation, and cavity geometrical features of the device permit the drying capacity of probe-impinging planar air-knife jets to be maximized by stabilizing local internal fluid movement to form a swirling (e.g., helical) gas flow field directed away from a drying region and toward a vacuum exhaust. The rinsing and drying apparatus eliminates rinse water re-circulated entrainment and up-wash (spitting) during the air-knife drying operation. Therefore, the rinsing and drying apparatus significantly reduces water carryout on sampling probes thereby reducing sample/reagent dilution.

Abstract: There are provided a two-fluid nozzle for effectively performing a liquid process on a substrate while suppressing a damage on the substrate, and a substrate liquid processing apparatus, a substrate liquid processing method and a storage medium using the two-fluid nozzle. The two-fluid nozzle includes a first liquid discharge hole for discharging a first liquid and a gas discharge hole for discharging a gas, and discharges, toward a target object, a mixed fluid of the first liquid discharged from the first liquid discharge hole and the gas discharged from the gas discharge hole. The mixed fluid is mixed at an outside of the two-fluid nozzle. The two-fluid nozzle further includes a second liquid discharge hole for supplying a second liquid toward an outer periphery of a target spot on the target object or toward an inner side of the outer periphery of the target spot.

Abstract: A plurality of spray units spray a cleaning liquid to a plurality of spray-target regions between which a site to be cleaned is interposed. The plurality of spray-target regions are linearly extending. The plurality of spray-target regions each has a spray pattern characterized in that a spray direction when viewed from a direction where the plurality of spray-target regions are linearly extending is perpendicular to a plane including the spray-target region. The spray units are disposed such that the plurality of spray-target regions are arranged in juxtaposition each other. The cleaning liquid sprayed from the spray units crashes against the plurality of spray-target regions and thereby generates cleaning liquid flows headed for the site to cleaned.

Abstract: An endoscope processing apparatus of the invention includes: a cleaning tank which can house an endoscope; a liquid drainage port, a liquid inlet port and a discharge port which are opening portions provided to the cleaning tank; a first-liquid introducing section which introduces a first liquid into a multipurpose conduit; a second-liquid introducing section which introduces a second liquid into the multipurpose conduit; a gas-liquid mixing section which mixes a liquid in the multipurpose conduit with gas, to deliver the mixed fluid to the discharge port; a liquid-feeding section which delivers a liquid in the multipurpose conduit to the gas-liquid mixing section; and an opening/closing section which opens and closes a connection between the multipurpose conduit and the gas-liquid mixing section; and a compressor which delivers the gas to the gas-liquid mixing section.

Abstract: Pyrolysis methods for disassociating an organic mass, or coating from an article, by placing the article in an air tight processing chamber, circulating a gaseous mixture of ambient air and at least 40% water vapor from an opening, through the processing chamber and out of an exhaust port, and maintaining the processing chamber at a temperature above 650 degrees Fahrenheit for a sufficient time to disassociate the organic material. A batch oven and a continuous processing oven including entrance and exit air closures that utilize the pyrolysis methods are described.

Abstract: The invention relates to a method and an apparatus for applying a fluid (32) to items (14) to be cleaned, which items are continuously or intermittently transported in the conveying direction (12) in an automatic cleaning machine, preferably an automatic pass-through dishwasher. At least two, preferably tubular, spray bodies (26.1, 26.2, 26.3, . . . 26.n) which are spaced apart from one another are arranged in at least one spray plane (22, 24) which is oriented parallel to the conveying direction (12) of the items (14) to be cleaned.

Abstract: The present invention relates to a liquid acidic hard surface cleaning composition having a pH of from 2 to 2.9 and comprising formic acid and an alkaline material.

Abstract: The present invention relates to a method used to remove post etch organic and inorganic residue as well polymeric residues and contaminants from semiconductor substrates. In one aspect, the method involves contacting the substrate with a composition are comprised of a water soluble organic solvent, a sulfonic acid and water.

Abstract: The present invention is directed to a CMP polishing slurry comprising cerium oxide particles, an organic compound having an acetylene bond (triple bond between carbon and carbon) and water, and a method for polishing a substrate which comprises a step of polishing a film to be polished of the substrate with the polishing slurry. In a CMP (chemical mechanical polishing) technique for flattening inter layer dielectrics, insulating films for shallow trench isolation and the like in a manufacturing process of semiconductor devices, the present invention enables the effective and high-speed polishing.

Abstract: A cleaning method that can prevent abnormal wear of an O-ring. A cleaning gas containing at least oxygen gas is supplied to the interior of a chamber in which a substrate is accommodated, and radio-frequency voltage is applied to the interior of the chamber to produce oxygen radicals from the cleaning gas. When the amount of deposit produced in the chamber in plasma processing is larger than a predetermined amount, the amount of fluorine radicals in the chamber is increased, and when the amount of the deposit is smaller than the predetermined amount, the amount of fluorine radicals in the chamber is decreased.

Abstract: Apparatus and methods are disclosed for cleaning interiors of passageways in endoscopes or other luminal medical devices by flow of liquid and gas therethrough. The liquid flow may include rivulets, droplets or other liquid entities which move on the internal surfaces of the passageways, and may include a three-phase contact interface between liquid and dry solid and gas.

Abstract: A cleaning and drying-preventing method including: positioning a nozzle in a container such that a funnel-like inner circumferential surface of the container is located around a periphery of a distal end of the nozzle; sucking a liquid in the nozzle to retract a level of the liquid to a side of a supply passage; supplying a solvent into the container to form a swirl flow of the solvent turning around the distal end of the nozzle, and cleaning the nozzle by the swirl flow; supplying a solvent into the container to form a liquid pool of the solvent; and further retracting the level of the liquid in the nozzle to the side of the supply passage. A liquid layer, an air layer, and a solvent layer are formed in the nozzle in this order from the side of the supply passage, to prevent drying of the liquid in the nozzle.

Abstract: A substrate cleaning method that includes: a step in which, while a substrate holder is being continuously rotated, a to-be-discharged position of the cleaning liquid on the substrate is changed to an eccentric position deviated from the central part of the substrate, and a gas is discharged from a gas nozzle to the central part of the substrate so as to form a dried area of the cleaning liquid under a condition in which a shortest distance between an edge of a cleaning liquid flow output from the cleaning-liquid nozzle and an edge of a gas flow output from the gas nozzle is set between 9 mm and 15 mm.

Abstract: Disclosed herein is a method and treatment system for rapid cleaning and protecting of automotive cooling systems containing controlled atmosphere brazed aluminum heat exchangers. The method and treatment system can optionally include a conditioning (passivating) step. The treatment system can comprise three different parts: (1) cleaner or cleaning solution; (2) conditioner or conditioning solution; and (3) compatible CAB aluminum protective heat transfer fluid.

Abstract: Embodiments of the current invention describe a cleaning solution for the removal of high dose implanted photoresist, along with methods of applying the cleaning solution to remove the high dose implanted photoresist and combinatorially developing the cleaning solution.

Abstract: A method for cleaning used beer kegs employing an aqueous solution of phosphoric acid, nitric acid and one or more surfactants, e.g., a detergent and/or wetting agent. Preferably, the aqueous cleaning solution has a total nitric acid content of 12 wt % or less. Complete cleaning can be achieved without using any caustic. The cleaning solution can be recycled repeatedly to clean multiple kegs on numerous occasions over a period of time, e.g., several weeks.

Abstract: The present invention is to provide a cleaning method to a process for fabricating a semiconductor. The method comprises steps as follows: A semiconductor substrate is first provided. An atomized spray are then continually supplied for a first time interval to clean the semiconductor substrate; and a water film is formed on the surface of the semiconductor substrate at or before a start point of the first time interval to buffer the impact imposed by the atomized spray, wherein the water film is preserved for a second time interval at least partially overlaps the first time interval.

Abstract: To provide a method for removing an acidic deposit containing a sulfur compound, whereby the terminal point of the cleaning state can be ascertained simply and efficiently without necessity to visually directly observe the cleaning state or to observe the behavior of the pH value of the cleaning fluid. A method for removing an acidic deposit containing a sulfur compound, which comprises contacting the acidic deposit with a prescribed amount of an aqueous cleaning fluid, characterized in that the concentration of sulfate ion (SO42?) in the aqueous cleaning fluid is measured, and the contact with the aqueous cleaning fluid is terminated after the increase per hour of the measured value becomes 15 not more than 10%.

Abstract: The present invention relates to the use of at least one alkanesulfonic acid of formula R—SO3H, in which R represents a saturated, linear or branched, hydrocarbon chain containing 1 to 4 carbon atoms, as agent for cleaning cement, mortar, concrete, lime, laitance and other derived products. The invention also relates to a method of cleaning cement, mortar, concrete, lime, laitance and other derived products using at least one alkanesulfonic acid.

Abstract: Disclosed is a substrate cleaning method for prevent damage to a pattern formed on a substrate. The substrate cleaning method includes cleaning the substrate by striking cleaning particulates carried in a flow of dry air or inert gas against a surface of the substrate, and removing the cleaning particulates.

Abstract: The present invention is a method of manufacturing a transfer mask with use of a mask blank in which a thin film for pattern formation and a chromium-based thin film made of a material containing chromium are stacked on a transparent substrate in this order. The thin film for pattern formation is made of material containing silicon and a transition metal other than chromium. The chromium-based thin film is made of a material containing chromium. Exposure light having a wavelength of 200 nm or less is applied to the transfer mask.

Abstract: A system and method of forming and using a proximity head. The proximity head includes a head surface including a first zone, a second zone and an inner return zone. The first zone including a first flat surface region and multiple first discrete holes connected to a corresponding first conduit and arranged in a first row. The second zone including a second flat region and multiple second discrete holes connected to a corresponding second conduit. The inner return zone being disposed between and adjacent to the first zone and the second zone and including multiple inner return discrete holes connected to a corresponding inner return conduit and arranged in an inner return row. The first row and the inner return row are parallel. A portion of an edge of each of the inner return discrete holes is recessed into the head surface.

Abstract: A soaking composition including an alkalinity source, a metal protector, a surfactant, water, a threshold agent, a binding agent, and a polymer blend that functions as a binding agent and a hard water modifier. The polymer blend includes a polymaleic acid, a polycarboxylic acid and a sodium polyacrylate.

Abstract: A resist removing device 1 functions to remove a resist from a substrate while preventing occurrence of popping phenomenon and at the same time attains reduction in cost of energy for the resist removing and has a simplified constitution. The resist removing device 1 is equipped with a chamber 2 for containing therein a substrate 16 (for example, a substrate having a high-doze ion implanted resist), and with a pressure below the atmospheric pressure, the chamber 2 is fed with ozone gas, unsaturated hydrocarbons and water vapor. The ozone gas may be an ultra-high concentrated ozone gas that is produced by subjecting an ozone containing gas to a liquefaction-separation with the aid of a vapor pressure difference and then vaporizing the liquefied ozone. For cleaning the substrate 16 thus treated, it is preferable to use ultra-pure water. The chamber 2 is equipped with a susceptor 15 for holding the substrate 16. The susceptor 15 is heated to a temperature of 100° C. or below.

Abstract: There are provided a liquid processing method and a liquid processing apparatus capable of removing a resist film without removing an underlying film when removing the resist film from a substrate on which the underlying film and the resist film are formed in sequence from the bottom and into which ions have been previously implanted. In the liquid processing method capable of processing a substrate by a processing solution, the method includes removing the resist film from the substrate by supplying the processing solution at a temperature of about 120° C. or higher to the substrate. The processing solution includes a sulfuric acid and a nitric acid at a preset ratio, and the substrate has thereon the underlying film and the resist film formed on the underlying film, and ions have been previously implanted into the substrate.

Abstract: A cleaning material is applied to a surface of a substrate. The cleaning material includes one or more polymeric materials for entrapping contaminants present on the surface of the substrate. A rinsing fluid is applied to the surface of the substrate at a controlled velocity to effect removal of the cleaning material and contaminants entrapped within the cleaning material from the surface of the substrate. The controlled velocity of the rinsing fluid is set to cause the cleaning material to behave in an elastic manner when impacted by the rinsing fluid, thereby improving contaminant removal from the surface of the substrate.

Abstract: A cleaning apparatus comprises a container configured to hold an article to be cleaned, a cleaning solvent dispenser configured to supply a cleaning solvent to the container, an energy generator configured to provide thermal energy to an interior of the container; and a control device in communication with the energy generator and configured to select thermal energy sufficient to sublimate the particles. The cleaning solvent comprises a solvent and nanofabricated particles dispersed therein. The control device controls the energy generator to provide thermal energy to the cleaning solvent in container in which the article is submerged in order to cause sublimation of the particles.

Abstract: The disclosure features a method of performing a boil-out cleaning process in connection with a fryer. The fryer includes a vat, a vessel for receiving oil drained from the vat, the vessel movable from an under-unit position, an oil drain path leading from an outlet opening of the vat to the pan, and an oil return path from the vessel back to the vat. The oil return path includes a pump. A drain valve is located along the oil drain path. The drain valve is opened to drain oil from the vat into the vessel is opened. The drain valve is closed after draining the oil from the vat. A boil-out cleaning fluid is delivered to the vat and the boil-out cleaning fluid is heated. A boil-out drain path is provided with an inlet positioned for receiving boil-out fluid from the drain valve and an outlet positioned forward of a front of the fryer unit. A container is placed below the outlet of the boil-out drain path.