Abstract: Described herein are surface treatment methods for removing one or more surface defect layers from polycrystalline films, polycrystalline films that are free of one or more defect surface layers, and use of the films in solar cells. In certain embodiments, the method is conducted by means of an adhesive tape or mechanical polishing. As described herein, solar cells containing the surface treated perovskite films show enhanced efficiency and stability.

Abstract: A substrate treating method including removing particles formed on a substrate by continuously performing a process of supplying a treatment liquid including a polymer and a solvent onto the substrate, forming a solidified liquid film by volatilizing the solvent in the treatment liquid, removing the solidified liquid film from the substrate by supplying a stripping liquid onto the substrate, and supplying a rinse liquid onto the substrate may be provided.

Abstract: [Problem] To obtain a substrate cleaning solution capable of cleaning a substrate and removing particles. [Means for Solution] The present invention is a substrate cleaning solution comprising an insoluble or hardly soluble solute (A), a soluble solute (B), and a solvent (C).

Abstract: A substrate processing apparatus for cleaning and drying a substrate under processing, including supplying a cleaning liquid onto the substrate under processing to form a cleaning liquid layer, supplying a gas onto the substrate under processing to partially remove the cleaning liquid layer and thus generate a first dry region on the substrate under processing, expanding the first dry region to generate a second dry region by controlling the movement speed of the boundary between the cleaning liquid layer and the first dry region to be less than or equal to a predetermined speed, and further expanding the second dry region to generate a third dry region.

Abstract: The invention relates a use of an aqueous composition comprising at least one organic peroxide to dissolve amorphous dithiazine.

Abstract: A substrate processing method includes a first processing liquid supplying step of supplying a first processing liquid to an upper surface of a substrate, a holding-layer forming step of solidifying or curing the first processing liquid to form a particle holding layer on the upper surface of the substrate, a holding-layer removing step of peeling and removing the particle holding layer from the upper surface of the substrate, a liquid film forming step of forming, after removal of the particle holding layer from the substrate, a liquid film of a second processing liquid, a gas phase layer forming step of forming a gas phase layer for holding the liquid film between the upper surface of the substrate and the liquid film, and a liquid film removing step of removing the second processing liquid from the upper surface of the substrate by moving the liquid film on the gas phase layer.

Abstract: A substrate processing method includes a processing liquid film forming step of supplying a processing liquid, containing a sublimable substance, to a pattern forming surface of a substrate, to form a processing liquid film on the pattern forming surface, a temperature maintaining step of maintaining a temperature of the processing liquid film, formed on the pattern forming surface, in a temperature range not lower than a melting point of the sublimable substance and lower than a boiling point of the sublimable substance, a film thinning step of thinning the processing liquid film while the temperature of the processing liquid film is in the temperature range, a freezing step of making the processing liquid film, thinned by the film thinning step, freeze on the pattern forming surface after the temperature maintaining step to form a frozen body of the sublimable substance, and a sublimating step of sublimating the frozen body to remove the frozen body from the pattern forming surface.

Abstract: A method of minimizing material mixing in a piping system during a transition between a first material and a second material includes providing a plurality of pipe pigs in a first pipe section with the plurality of pipe pigs being sufficient to substantially fill a cross-section of the first pipe section and to define a plug having a leading edge and a trailing edge such that the leading edge is in contact with a first material and the trailing edge is in contact with a second material. Each pipe pig has a nominal size that is smaller than an effective diameter of the first pipe section. The plug is moved through the piping system by moving the second material. Advantageously, mixing of the first material and the second material is inhibited by the plug.

Abstract: According to one embodiment, a substrate cleaning apparatus that cleans a substrate while rotating the substrate, the substrate cleaning apparatus includes: a first cleaning liquid supplier that sprays cleaning liquid in a spray shape at a first spraying angle toward a center of the substrate; and a second cleaning liquid supplier that sprays cleaning liquid in a spray shape at a second spraying angle greater than the first spraying angle toward an area between the center of the substrate and an edge of the substrate.

Abstract: A composition for cleaning a semiconductor substrate contains: a novolak resin; an organic acid not being a polymeric compound; and a solvent. A solid content concentration of the composition is no greater than 20% by mass. The organic acid is preferably a carboxylic acid. The carboxylic acid is preferably a monocarboxylic acid, polycarboxylic acid or a combination thereof. The molecular weight of the organic acid is preferably from 50 to 500. The content of the organic acid with respect to 10 parts by mass of the novolak resin is preferably from 0.001 parts by mass to 10 parts by mass. The solvent includes preferably an ether solvent, an alcohol solvent, or a combination thereof. The proportion of the ether solvent, the alcohol solvent, or the combination thereof in the solvent is preferably no less than 50% by mass.

Abstract: The present invention relates to a composition for removing a radionuclide, including: a first polymer including a hydroxy group; a second polymer into which a boronic acid group is introduced as a functional group; and an adsorbent for removing the radionuclide, and a method for removing a radionuclide using the same.

Abstract: An object is to provide a mask blank for manufacturing a phase shift mask in which a thermal expansion of a phase shift pattern, which is caused when exposure light is radiated onto the phase shift pattern, and displacement of the phase shift pattern are suppressed to be small. A phase shift film has a function of transmitting exposure light from an ArF excimer laser at a transmittance of 2% or higher and 30% or lower and a function of generating a phase difference of 150° or larger and 180° or smaller between the exposure light that has been transmitted through the phase shift film and the exposure light that has passed through air by a distance equal to a thickness of the phase shift film. The phase shift film is formed of a material containing a metal and silicon, and has a structure in which a lower layer and an upper layer are laminated in the stated order from a transparent substrate side.

Abstract: A method for bonding a first component to a second component includes placing the first and second components in a cavity. Each of the first and second components has a bonding portion, and the bonding portion of the first component faces the bonding portion of the second component. A supercritical fluid is then introduced into the cavity with a temperature of 40-400° C. and a pressure of 1,500-100,000 psi, and a pressure of 4-100,000 psi is applied on both the first and second components, assuring the bonding portion of the first component bond to the bonding portion of the second component. Moreover, a method for separating a first component from a second component includes placing a composite in a cavity. The composite includes the first component, the second component and a connecting layer by which the first component joins to the second component. The supercritical is then introduced into the cavity.

Abstract: The present disclosure relates to compositions and methods of using the compositions for treating a floor surface. The disclosed compositions clean the floor surface, repair damage, or maintain the original look of the floor. The disclosed compositions also do not provide a permanent finish on the floor, are temporary coatings, or do not significantly change the gloss of the floor after application.

Abstract: A substrate processing of the present invention includes a supplying unit which supplies a process liquid containing a sublimable substance in a molten state to the pattern-formed surface of a substrate, a solidifying unit which solidifies the process liquid on the pattern-formed surface so as to form a solidified body and a sublimating unit which sublimes the solidified body so as to remove the solidified body from the pattern-formed surface, and the vapor pressure of the process liquid at a temperature of 20 to 25° C. is equal to or more than 5 kPa, and the surface tension thereof at a temperature of 20 to 25° C. is equal to or less than 25 mN/m.

Abstract: Disclosed are a substrate treating apparatus and a substrate treating method. The substrate treating apparatus includes a support member which supports a substrate; a treatment liquid discharging member which discharges a treatment liquid containing a monomeric substance to the substrate located in the support member; and a light irradiator which irradiates light to the treatment liquid discharged to the substrate.

Abstract: In one embodiment, a spin coating apparatus includes a coating liquid feeding module to drop a coating liquid onto a substrate, and a motor to rotate the substrate. The module drops a first drop amount of the coating liquid onto the substrate at a first discharge rate, while the motor rotates the substrate at a first number of rotations. The module drops a second drop amount of the coating liquid onto the substrate at a second discharge rate larger than the first discharge rate, while the motor rotates the substrate at a second number of rotations smaller than the first number of rotations, after the first drop amount of the coating liquid is dropped. The module discharges the coating liquid onto the substrate at a third discharge rate smaller than the second discharge rate, after the coating liquid is discharged onto the substrate at the second discharge rate.

Abstract: In one embodiment, a substrate treatment apparatus includes cleaning and rinse modules configured to clean and rinse a surface of a substrate provided with a pattern, and a solidifying agent containing liquid supplying module configured to supply a solidifying agent containing liquid that contains a solidifying agent to the cleaned and rinsed surface of the substrate. The apparatus further includes a precipitation module configured to precipitate the solidifying agent as solid on the surface of the substrate, and a decomposition module configured to decompose and gasify the solid to remove the solid from the surface of the substrate. The solidifying agent contains an ammonium salt, and the ammonium salt contains an ammonium ion or an ion having a structure in which at least one of four hydrogen atoms of an ammonium ion is substituted with another atom or atom group.

Abstract: In an apparatus for treating a wafer-shaped article, a spin chuck is provided for holding and rotating a wafer-shaped article. A liquid dispenser comprises a check valve positioned so as to prevent process liquid from dripping out of a discharge nozzle of the liquid dispenser. A valve seat of the check valve is at a distance in a range of 20 mm to 100 mm from an outlet opening of said discharge nozzle.

Abstract: A cleaning liquid and a gas are discharged in sequence to a central portion of a substrate while the substrate is being rotated, and after nozzles that discharge them are moved to a peripheral edge side of the substrate, discharge of the cleaning liquid is switched to a second cleaning liquid nozzle set at a position deviated from a movement locus of the first cleaning liquid nozzle. Both of the nozzles are moved toward the peripheral edge side of the substrate while discharging the cleaning liquid and discharging the gas so that a difference between a distance from the discharge position of the second cleaning liquid nozzle to the central portion of the substrate and a distance from the discharge position of the gas nozzle to the central portion of the substrate gradually decreases.

Abstract: Methods for manufacturing semiconductor devices are disclosed. A photoresist layer is formed over a substrate. A cryogenic process is performed on the photoresist layer. After the cryogenic process, a cleaning process is performed on the photoresist layer to remove the photoresist layer.

Abstract: A substrate cleaning method includes: a first step in which a cleaning liquid is ejected from a nozzle N2 to a central portion of a wafer W; a second step in which a dry gas is ejected from a nozzle N3 to the central portion of the wafer W to form a dry area; a third step in which the cleaning liquid is ejected from the nozzle N2 while the nozzle N2 is moved from a central side of the wafer W to a peripheral side thereof; a fourth step in which a width of an intermediate area generated between a wet area and the dry area is acquired; and a fifth step in which, when the width of the intermediate area exceeds a predetermined threshold value, a process parameter is changed such that the width of the intermediate area becomes the threshold value or less.

Abstract: Methods and apparatus for treating an organic film such as photoresist with a hydroxyl-generating compound prior to removing the organic film from a substrate are provided. Treatments include exposure to one or more of hydrogen peroxide vapor and water vapor in a non-plasma environment. In some implementations, conditions are such that condensation on the surface is suppressed. Methods include treating high-dose ion-implantation photoresists and post-plasma doping photoresists with little or no material loss and permit mild plasma removal of the photoresist after treatment.

Abstract: The disclosure relates to the cleaning of oilfield tools made of metal, particularly to the method of reclamation oilfield tools, already used in the mechanical deep-pumping extraction of oil, as well as to the product made with the help of the mentioned method. The method of remanufacturing of standard length rods includes cleaning the rod with at least one cryogen to eliminate environmental contamination and to assist in workplace safety.

Abstract: Apparatus and methods for removing particle contaminants from a solid surface includes providing a layer of a viscoelastic material on the solid surface. The viscoelastic material is applied as a thin film and exhibits substantial liquid-like characteristics. The viscoelastic material at least partially binds with the particle contaminants. A high velocity liquid is applied to the viscoelastic material, such that the viscoelastic material exhibits solid-like behavior. The viscoelastic material is thus dislodged from the solid surface along with the particle contaminants, thereby cleaning the solid surface of the particle contaminants.

Abstract: A method and an apparatus using aqueous fixatives for fogging of ventilation ductwork, enclosures, or buildings containing dust, lint, and particulates that may be contaminated by radionuclides and other dangerous or unsafe particulate contaminants, which method and apparatus are capable of (1) obtaining full coverage within the ductwork and (2) penetrating and fixing the lint, dust and large particles present in the ductwork so that no airborne particles are released during or after the application of the fixative. New aqueous fogging solutions outperform conventional glycerin-based solutions. These aqueous solutions will fog using conventional methods of application and contain a surfactant to aid wetting and penetration of the lint and dust, a binder to stabilize loose or respirable particles, and an agent to aid in fogging and enhance adhesiveness. The solutions are safe and easy to use.

Abstract: A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.

Abstract: A method for cleaning a substrate includes supplying to a substrate a film-forming processing liquid which includes a volatile component and forms a film on the substrate, vaporizing the volatile component in the film-forming processing liquid such that the film-forming processing liquid solidifies or cures on the substrate and forms a processing film on the substrate, supplying to the substrate having the processing film a strip-processing liquid which strips the processing film from the substrate, and supplying to the processing film formed on the substrate a dissolving-processing liquid which dissolves the processing film after the supplying of the strip-processing liquid.

Abstract: A method for cleaning a substrate, includes supplying to a substrate having a hydrophilic surface a film-forming processing liquid which includes a volatile component and forms a film on the substrate, vaporizing the volatile component in the film-forming processing liquid such that the film-forming processing liquid solidifies or cures on the substrate and forms a processing film on the hydrophilic surface of the substrate, and supplying to the substrate having the processing film a strip-processing liquid for stripping the processing film from the substrate.

Abstract: A method for cleaning a deposition chamber includes forming a deposited layer over an interior surface of the deposition chamber, wherein the deposited layer has a deposited layer stress and a deposited layer modulus; forming a cleaning layer over the deposited layer, wherein a material comprising the cleaning layer is selected such that the cleaning layer adheres to the deposited layer, and has a cleaning layer stress and a cleaning layer modulus, wherein the cleaning layer stress is higher than the deposited layer stress, and wherein the cleaning layer modulus is higher than the deposited layer modulus; and removing the deposited layer and the cleaning layer from the interior of the deposition chamber.

Abstract: A method for cleaning a deposition chamber includes forming a deposited layer over an interior surface of the deposition chamber, wherein the deposited layer has a deposited layer stress and a deposited layer modulus; forming a cleaning layer over the deposited layer, wherein a material comprising the cleaning layer is selected such that the cleaning layer adheres to the deposited layer, and has a cleaning layer stress and a cleaning layer modulus, wherein the cleaning layer stress is higher than the deposited layer stress, and wherein the cleaning layer modulus is higher than the deposited layer modulus; and removing the deposited layer and the cleaning layer from the interior of the deposition chamber.

Abstract: The present invention relates to a protein/peptide composition for protection of surfaces comprising an aqueous solution of at least two components, the first component (A) being a water-soluble protein or a mixture of water-soluble proteins having an average molecular weight Mw of at least 30000, and being capable of forming a gel, and the second component (B) being a water-soluble peptide or a mixture of water-soluble peptides mixture having an average molecular weight of 200-10000, and being capable of inhibiting gel formation in said composition. The present invention further relates to a method for preparing such a composition, the use of the composition for protecting a surface, a method for protecting a substrate surface using the composition, and to a substrate surface coated with the composition.

Abstract: An apparatus for cleaning a substrate is disclosed. The apparatus includes a first chamber through which a substrate is conveyed, a second chamber where an oxide film formed on the substrate conveyed from the first chamber is removed; and a third chamber that discharges the substrate conveyed from the second chamber to the outside after rinsing the substrate, wherein the first chamber and the third chamber are disposed on top and on bottom.

Abstract: A reflow oven includes a chamber housing including surfaces that are in contact with heated air mixed with contaminants, including flux, and a water-soluble layer selectively applied to the surfaces of the chamber housing. Embodiments of the reflow oven include an acrylic-based layer, such as an acrylic paint. In one embodiment, the acrylic paint includes a water-soluble polymer, a polymer emulsion, and water. The water-soluble polymer includes butyl benzyl phthalate. In some embodiments, the acrylic paint includes 1-10% by weight butyl benzyl phthalate, 30-55% by weight acrylic polymer emulsion, and balance water. In a certain embodiment, the acrylic paint includes 1-5% by weight butyl benzyl phthalate, 35-50% by weight acrylic poly emulsion, and balance water. Methods of treating surfaces of the reflow oven are further disclosed.

Abstract: A substrate processing apparatus comprises: a liquid film former which forms a liquid film by supplying a liquid on an upper surface of the substrate W held horizontally; a cooling gas discharge nozzle which discharges cooling gas of a temperature lower than a freezing point of the liquid forming the liquid film to the liquid film; a thawing liquid discharge nozzle which discharges a thawing liquid to a frozen film formed by freezing the liquid film; a thawing liquid supplier which supplies the heated thawing liquid to the thawing liquid discharge nozzle via a pipe; and a receiver which receives the cooling gas and the thawing liquid respectively discharged from the cooling gas discharge nozzle and the thawing liquid discharge nozzle at the respective retracted position and guides the cooling gas and the thawing liquid to a common flow passage.

Abstract: Compositions and methods of removing particulate matter from a surface. An example comprises contacting a kneadable dust removal composition with the surface so that the particulate matter adheres or becomes embedded within the composition, and is removed from the surface with the dust removal composition. Preferably the dust removal composition comprises a polymerized siloxane, more preferably a substituted polymerized siloxane, even more preferably, a non-cross-linked, linear polymerized siloxane. In other embodiments the invention comprises a kneadable dust removal composition, preferably comprising a polymerized siloxane. The dust removal composition may be packaged to be attachable to a broom, sweeper, or mop so that it make used to pick up residue from sweeping, brushing or mopping. In other embodiments the dust removal composition may be packaged in a “twist-up” or other similar package permitting the composition to be extruded or advanced to expose a fresh surface.

Abstract: The present invention relates to methods for cleaning semiconductors used in photovoltaic cells and modules, and methods for manufacturing p-n junctions for photovoltaic cells and modules. More particularly, the method comprises providing at least one semiconductor layer of a photovoltaic module and scrubbing the surface of the least one semiconductor layer in the presence of a chemical solution.

Abstract: A method for cleaning an interior of a process chamber after performing a process of forming a carbon-containing film on a substrate in the process chamber includes performing a cycle a predetermined number of times. The cycle includes supplying a modifying gas into the process chamber to modify deposits including the carbon-containing film deposited on a surface of a member in the process chamber and supplying an etching gas into the process chamber to remove the modified deposits through a thermochemical reaction.

Abstract: A method for the dissolution of amorphous dithiazine buildup on a surface is presented. The method consists of treating the dithiazine buildup with a solution of hydrogen peroxide, which reacts and breaks apart the buildup for easy removal.

Abstract: Disclosed is a liquid chemical for forming a water-repellent protecting film. The liquid chemical contains an agent for forming a water-repellent protecting film, and a solvent. The agent is for provided to form a water-repellent protecting film on a wafer after a cleaning step for the wafer and before a drying step for the wafer, the wafer having at its surface an uneven pattern and containing at least one kind element of titanium, tungsten, aluminum, copper, tin, tantalum and ruthenium at surfaces of recessed portions of the uneven pattern, the water-repellent protecting film being formed at least on the surfaces of the recessed portions. The liquid chemical is characterized in that the agent for forming a water-repellent protecting film is a compound represented by the following general formula [1].

Abstract: The cleaning formulation and method uses a polysilazane for superior cleaning and to create a protective coating with “easy clean” properties on numerous surface types, including metals, marine paints and gel-coat surfaces; cleaning and guarding them from the effects of all types of accretions, including two of the most pernicious—ice and diesel exhaust soot. The polysilazane is used with a cyclomethicone solvent, preferably pentacyclomethicone and/or hexacyclomethicone. The preferred method of application is by direct contact and application of the cleaning formulation to the treated surface via a microfiber cloth wrapped around a firm rubber blade or the like.

Abstract: A method for removing residual filter cakes that remain adhered to a filter after typical particulate removal methodologies have been employed, such as pulse-jet filter element cleaning, for all cleanable filters used for air pollution control, dust control, or powder control.

Abstract: Embodiments relate to solid nano-particles applied to the surface of well equipment to treat bituminous material adhesion. An embodiment provides a method of treating the surface of well equipment. The method may comprise applying a solid nanoparticle film to the surface of the well equipment with a treatment fluid comprising solid nanoparticles. The method may further comprise allowing the solid nanoparticles to interact with the surface of the well equipment and/or bituminous materials adhered to the surface of the well equipment to remove at least a portion of the bituminous materials from the surface of the well equipment.

Abstract: A method for removing native oxides from a substrate surface is provided. In one embodiment, the method comprises positioning a substrate having an oxide layer into a processing chamber, exposing the substrate to a gas mixture while forming a volatile film on the substrate and maintaining the substrate at a temperature below 65° C., heating the substrate to a temperature of at least about 75° C. to sublimate the volatile film and remove the oxide layer, and depositing a first layer on the substrate after heating the substrate.

Abstract: Apparatus and methods for removing particle contaminants from a surface of a substrate includes coating a layer of a viscoelastic material on the surface. The viscoelastic material is coated as a thin film and exhibits substantial liquid-like characteristic. An external force is applied to a first area of the surface coated with the viscoelastic material such that a second area of the surface coated with the viscoelastic material is not substantially subjected to the applied force. The force is applied for a time duration that is shorter than a intrinsic time of the viscoelastic material so as to access solid-like characteristic of the viscoelastic material. The viscoelastic material exhibiting solid-like characteristic interacts at least partially with at least some of the particle contaminants present on the surface.

Abstract: The present method comprises providing a flexible web substrate (e.g., polymeric flexible web substrates) that forms at least part of a component of a device, coating so as to wet-out on and cover all or a substantial portion of a major surface on one side or both sides of the flexible web substrate with flowable polymeric material, while the flexible web substrate is moving in a down-web direction, and solidifying the polymeric material so as to form one cleaning layer on the major surface of one side or both sides of the flexible web substrate. The present invention can be utilized in a continuous in-line manufacturing process. In applications of the present invention where the flexible web substrate will not form a component of a device, the present invention broadly provides a method for cleaning particles from a flexible web of indefinite length.

Abstract: A method for restoring a vehicle headlight lens by removing contaminants begins with wiping the lens surface of a vehicle headlight clean. An alcohol-saturated cleaning substance is used to remove debris and pollution from the surface. The alcohol is specifically selected to also remove moisture from the surface of the lens to the greatest extent possible. For optimal cleaning conditions the headlight is heated either by illumination or direct sunlight to a temperature of about 70 to 110 degrees Fahrenheit. A lens restoration solution that includes a dissolving chemical compound such as acetone, methyl ethyl ketone, cyclohexanone and/or tetrahydrofuran is applied to the lens surface, either with an applicator or by spraying. After the lens surface has been restored to a smooth, transparent condition, and adequately hardened, a UV protectant is applied to maintain the lens surface.

Abstract: A reflow oven includes a chamber housing including surfaces that are in contact with heated air mixed with contaminants, including flux, and a water-soluble layer selectively applied to the surfaces of the chamber housing. Embodiments of the reflow oven include an acrylic-based layer, such as an acrylic paint. In one embodiment, the acrylic paint includes a water-soluble polymer, a polymer emulsion, and water. The water-soluble polymer includes butyl benzyl phthalate. In some embodiments, the acrylic paint includes 1-10% by weight butyl benzyl phthalate, 30-55% by weight acrylic polymer emulsion, and balance water. In a certain embodiment, the acrylic paint includes 1-5% by weight butyl benzyl phthalate, 35-50% by weight acrylic poly emulsion, and balance water. Methods of treating surfaces of the reflow oven are further disclosed.

Abstract: The present invention provides a method for removing metal and/or metal oxide contamination from the interior of a vacuum coating reactor, the method comprising the steps of: a) performing an idle coating step by depositing a coating layer, wherein the coating layer comprises silicon; b) at least partly removing the deposited coating layer. The method according to the invention is particularly suitable for cleaning reactors in the context of solar cell manufacturing. The method is time saving and cost saving.

Abstract: A method for cleaning a substrate includes supplying a treatment solution which includes a volatile component onto the front surface of a substrate, solidifying or curing the treatment solution through vaporization of the volatile component of the treatment solution such that a treatment film is formed on the entire portion of the front surface of the substrate, treating a different surface of the substrate while the entire portion of the front surface of the substrate is covered with the treatment film, and supplying to the substrate a removal solution which removes the treatment film in the amount sufficient such that the treatment film covering the entire portion of the front surface of the substrate is removed substantially in entirety after the treating of the different surface of the substrate is finished.