Abstract: An electronic parts cleaning solution comprising a hydroxide, water, metal corrosion inhibitor, and at least one compound represented by the following general formula (I) or (II): HO—((EO)x-(PO)y)z-H  (I) wherein, EO represents an oxyethylene group, PO represents an oxypropylene group, x and y represent integers satisfying the relation: x/(x+y)=0.05 to 0.4, and z represents a positive integer, R—[((EO)x-(PO)y)z-H]m  (II) wherein, EO, PO, x, y and z are the same as in the general formula (I), R represents a residual group obtained by removing a hydrogen atom on a hydroxyl group of alcohol or amine having a hydroxyl group, or a residual group obtained by removing a hydrogen atom on an amino group of amine, and m represents an integer of 1 or more.

Abstract: A composition for cleaning and decontaminating medical devices such as dialyzers. A per-compound oxidant, for example, hydrogen peroxide (H2O2) and/or peracetic acid, is mixed with a buffer such as dipotassium hydrogen phosphate. The pH of the composition is between about 5-11. The composition effectively cleans the device, can achieve high level disinfection and sterilization of the device and is non-corrosive to plastics and adhesives used in the device.

Abstract: The invention relates to a method for cleaning a metallic or an enameled surface comprising flooding a metallic surface contaminated with deposits with a mixture comprising (i) water, (ii) chippings of woods selected from the group consisting of merantis, bongossis, mahoganies, sipos, khayas, lauans, and sapellis, and (iii) a member selected from the group consisting of polyaspartic acid, salts of polyaspartic acid, and polysuccinimide, and thereby cleaning the surface.

Abstract: A method for removing a ruthenium-containing metal includes the step of applying a remover to a semiconductor substrate. The remover includes a cerium (IV) nitrate salt and nitric acid.

Abstract: A process for washing articles in a mechanical washing machine including the steps of: (i) treating the articles with a wash liquor including a dishwashing composition; said composition when undiluted including greater than 20 wt.% of a bicarbonate salt followed by (ii) treating the articles with a rinsing solution including rinse aid the rinse aid when undiluted comprising at least 20 wt. % of a water soluble acid builder or salt thereof; wherein minimal rejuvenation of ion exchange material within the machine is needed.

Abstract: A glass substrate is cleaned by contacting a preliminarily polished glass surface with functional water having a positive ORP potential for a predetermined period of time in the last rinsing step in order to repair the structure of the glass so as to achieve higher surface hardness and improved corrosion resistance.

Abstract: A desmear process for removing resin smeared on an interior wall of a through hole drilled in a resinous substrate, especially resinous substrates made from epoxy, polyimide, cyanate ester resins or bis-maleimide triazine epoxy resins. The process involves contacting the resin smear with a mixture of gamma-butyrolactone and water to soften the resin smear, followed by treatment with an alkaline permanganate solution to remove the softened resin, and treatment with an aqueous acidic neutralizer to neutralize and remove the permanganate residues. The gamma-butyrolactone is effective as a single solvent for softening and swelling resin smears from substrates made from epoxy, polyimide, cyanate ester resins, bis-maleimide triazine epoxy resins, and polyimide resins.

Abstract: A chromium oxide coating is removed from a surface of an article by cleaning the article in an alkaline degreasing/rust removal solution at a degreasing/rust removal temperature of from about 180° F. to about 200° F., scale conditioning the article in an alkaline permanganate conditioning solution at a scale-conditioning temperature of from about 160° F. to about 200° F., and contacting the article to an acidic stripping solution comprising hydrochloric acid and an etching inhibitor at a stripping temperature of from about 130° F. to about 140° F.

Abstract: A process for the chemical treatment of semiconductor wafers in the presence of HF and then in the presence of ozone, in particular for the cleaning of silicon semiconductor wafers, is such that the semiconductor wafers that are treated with the medium containing ozone are free of aqueous HF.

Abstract: Brass articles having leachable lead are contacted with an aqueous caustic solution having a pH of about 10 to about 14 that contains a chelating agent. During contact, the brass articles can be sonicated. The brass articles can be optionally pretreated by contacting them with an aqueous solution containing an organic carboxylic acid and an inorganic per-salt. The brass article can optionally further be post treated by contacting them with an aqueous solution containing thiourea.

Abstract: A method of treating a surface of a metal is provided. A source of fluoride ion is mixed with a source of acid to form hydrofluoric acid and, when applied to a metal surface to be treated, the hydrofluoric acid acts as a brightening agent.

Abstract: The invention concerns a liquid de-inking composition comprising at least a surfactant of polyalkoxylated terpenic origin of formula: Z—X—W—[CH—(R5)CH(R6)-O]q—A wherein: Z is a bicycloheptenyl or bicycloheptyl radical, preferably substituted by methyl radicals; X is preferably a —CH2—CH2—O— or —O—CH2—CH2—O— radical; W is a polysequence, preferably polyoxypropylene and polyoxyethylne sequence; [CH(R5)—CH(R6)—O]q is a sequence different from a polyoxyethylene, preferably polyoxypropylene sequence; A is a hydrogen atom, a hydrocarbon or functional group. Said composition can be used for de-inking paper.

Abstract: The high tension steel sheet includes 0.1 wt % or more of silicon and has a zinc-plating layer thereon. When sputtering analysis is performed in the depth direction from the surface of the high tension steel sheet after the zinc-comprising-plating layer is removed by dissolution, a surface-concentrated Si index X defined by the formula, X=(the maximum intensity A of Si on the surface of the high tension steel sheet/the average intensity B of Si in the steel)×the content of Si in the steel sheet on a wt % basis, is 12 or less.

Abstract: A process for the preliminary treatment of a metallic workpiece before coating is disclosed. The surface to be coated is cleaned with a solution containing a degreasing agent and coated with a corrosion-inhibiting layer. In order to obtain particularly advantageous conditions, the invention proposes that the surface of a workpiece to be coated be treated with a solution of polyaspartic acid to apply a corrosion-resistant coating.

Abstract: Brass articles having leachable lead are contacted with an aqueous caustic solution having a pH of about 10 to about 14 that contains a chelating agent. During contact, the brass articles can be sonicated. The brass articles can be optionally pretreated by contacting them with an aqueous solution containing an organic carboxylic acid and an inorganic per-salt. The brass article can optionally further be post treated by contacting them with an aqueous solution containing sodium persulfate.

Abstract: A method for separating layers from articles made of high-speed steel and having at least one layer of TiAlN, includes applying an alkaline solution containing hydrogen peroxide, a base as well as acid to the layer. The acid is selected from phosphates, phosphonates and phosphonic acids.

Abstract: In the invention pickling process, steel and nickel or chromium alloys are pickled with an acidic pickling solution employing an oxidant, particularly hydrogen peroxide, and in which liquor is recirculated through inlets comprising a nozzle feeding liquor into a diffuser such that liquor is withdrawn from the bath and the volume of liquor flowing through the diffuser is a multiple of flow through the nozzle. Steel or the alloys are pickled with an acidic solution containing iron and free hydrogen peroxide at a concentration of up to 0.1 gpl. The process can operate effectively at a free fluoride concentration of from 20 to 30 gpl and a sulphuric acid concentration of from 80 to 110 gpl. The lifetime of the bath before it needs to be replaced can be lengthened by the process compared with using an air agitation system.

Abstract: A method for selectively removing oxide material from the surface of a substrate or coating disposed on the substrate is disclosed. The method includes the step of contacting the oxide material with an aqueous treatment composition having the formula HXAF6, wherein A can be Si, Ge, Ti, Zr, Al, and Ga; and x is 1-6. The composition can sometimes include an additional acid, such as phosphoric acid, nitric acid, sulfuric acid, hydrochloric acid, hydrofluoric acid, and mixtures thereof. A method for replacing a worn or damaged protective coating applied over a substrate, utilizing the treatment composition, is also described.

Abstract: In a method for cleaning an engine component, an engine component is provided and is immersed in an acid solution selected from phosphoric acid, citric acid and acetic acid. A cleaning composition for an engine component comprises an agitated acid solution selected from phosphoric acid, citric acid and acetic acid.

Abstract: A process of removing residual slurry resulting from chemical mechanical polishing of a workpiece in which the workpiece is contacted with a composition of a supercritical fluid, said supercritical fluid including supercritical, carbon dioxide and a co-solvent, and a surfactant.

Abstract: In cleaning a substrate which has a metal material and a semiconductor material both exposed at the surface and which has been subjected to a chemical mechanical polishing treatment, the substrate is first cleaned with a first cleaning solution containing ammonia water, etc. and then with a second cleaning solution containing (a) a first complexing agent capable of easily forming a complex with the oxide of said metal material, etc. and (b) an anionic or cationic surfactant.

Abstract: A chemical delacquering composition, process and system for delacquering substrates such as aluminum scrap in which an aqueous solution containing at least one short-chain organic acid, preferably a mixture of two short-chain organic acids, and optional components such as surfactants, are contacted onto the substrate(s) with application of heat and agitation. The invention embraces the use of one or more organic acids (carboxylic acids) having a total of 2-12 carbons, preferably 3-8 carbons. Concentration of organic acid by weight ranges from about 0.5-8% per at least one organic acid, or preferably 2-4% for each organic acid component assuming two organic acid components are present. In the preferred embodiment of the invention, about 2-4% each of citric and lactic acids are present in the delacquering composition. Processing temperatures range from 160-212° F., preferably 180-212° F., and most preferably 185-212° F.

Abstract: An endpoint detection system for copper stripping using a colorimetric analysis of the change in concentration of a component is described. Wet copper stripping chemicals are used to strip copper from a wafer whereby an eluent is produced. The eluent is continuously analyzed by colorimetric analysis for the presence of copper. The copper stripping process is stopped when the presence of copper is no longer detected. Also novel compounds or chemicals for use in an endpoint detection system for copper stripping using a colorimetric analysis of the change in concentration of the novel compounds or chemicals are described. A composition of matter that serves as an indicator of the presence of copper by colorimetric analysis comprises: 1) Fast Sulphon Black F indicator and an ammonium ion-containing solution or 2) a complexing agent, comprising a diamine, an amine macrocycle, or a monoamine.

Abstract: A process of removing residual slurry resulting from chemical mechanical polishing of a workpiece in which the workpiece is contacted with a composition of a supercritical fluid, said supercritical fluid including supercritical carbon dioxide and a co-solvent, and a surfactant.

Abstract: A method and system for cleaning a metal article. The system is used to employ a method that comprises placing the article in a means defining a chamber; subjecting the article to a gaseous atmosphere in the means defining a chamber, where the gaseous atmosphere consisting essentially of carbon, hydrogen, and fluorine; and subjecting the article to the gaseous atmosphere at a temperature in a range from about 815° C. to about 1100° C. to clean the article.

Abstract: The present invention has as an object thereof to provide a cleaning method which realizes, in the cleaning process, (1) a reduction in the number of processes, (2) a simplification of the cleaning apparatus, and (3) a reduction in the amount of chemicals and pure water employed, and which has highly superior cleaning effects and does not damage the substrate body, as well as to provide a rinsing method which aids in the hydrogen termination of silicon atoms.

Abstract: Removing particles and metallic contaminants without corrosing the metallized wirings and without giving adverse effect of planarization on the semiconductor substrate surface can be effectively achieved by use of a cleaning agent which comprises an organic acid having at least one carboxyl group and a complexing agent having chelating ability.

Abstract: The invention provides aqueous alkaline compositions useful in the microelectronics industry for stripping or cleaning semiconductor wafer substrates by removing photoresist residues and other unwanted contaminants. The compositions typically contain (a) one or more metal ion-free bases at sufficient amounts to produce a pH of about 10-13 and one or more bath stabilizing agents having at least one pKa in the range of 10-13 to maintain this pH during use; (b) optionally, about 0.01 % to about 5% by weight (expressed as % SiO2) of a water-soluble metal ion-free silicate; (c) optionally, about 0.01% to about 10% by weight of one or more chelating agents; (d) optionally, about 0.01% to about 80% by weight of one or more water-soluble organic co-solvents; and (e) optionally, about 0.01% to about 1% by weight of a water-soluble surfactant.

Abstract: A method of prevention maintenance preventing parts of an etcher from being eroded is disclosed. First, a layer of hydrogen-free chemical compound is formed on surface of the parts of the etcher according to one embodiment of the present invention. Otherwise, the parts of the etcher are immersed into a tank containing hydrogen-free chemical compound according to another embodiment of the present invention. After that, a standard process of prevention maintenance is performed by a cleaning agent.

Abstract: A method and product for computer disk drives. Glass substrates are provided having low content of residual polishing particles on the surfaces thereof. An exemplary method includes reduction of residual polishing particle content by immersion of the glass substrate in an acid bath containing nitric acid, hydrogen peroxide and an organic acid having a carboxylic acid group.

Abstract: Stainless steel is pickled by a chemical and/or electrochemical pickling process using an acid liquid, containing substantially no nitric acid. The process uses a spent electrolyte solution from an electrochemical, neutral salt pickling tank, such as a sodium sulfate pickling tank. The spent electrolyte solution is added to an acid solution to form a pickling acid capable of pickling stainless steel, oxidizing Fe2+ to Fe3+ and reducing Cr6+ to Cr3+.

Abstract: A process of drying a semiconductor wafer which includes at least one microelectric structure disposed thereon which includes contacting a water-containing thin film-covered semiconductor wafer with a composition which includes liquid or supercritical carbon dioxide and a surfactant.

Abstract: A method for cleaning a PZT thin film using an etchant is provided. The method employs a combination of HF (or buffered oxide etchant (BOE)) and acetic acid, or a combination of HF(BOE), acetic acid and alcohol, as an etchant to thus reduce an etching rate of a PZT thin film, which is greatly dependent on the density of HF, thereby etching the PZT thin film to a finer dimension of thickness of 100Å or less using the etchant. Therefore, only secondary phase crystals or etching damaged layers on the surface of the PZT thin film can be eliminated.

Abstract: A method of cleaning surfaces made of glass, graphite, ceramics, polymeric and metallic materials, synthetic and vegetable fibres, e.g. fabrics, textiles or waste paper, in particular membrane surfaces, by detaching or dissolving organic and inorganic soilings by a simple flushing operation, where a solution of an iminocarboxylic acid, a polyamino acid, an emulsifier or a mixture thereof is used.

Abstract: A workpiece or substrate is placed in a support in a reaction chamber. A heated process liquid is sprayed onto the substrate. The thickness of the layer of process liquid formed on the substrate is controlled, e.g., by spinning the substrate. Ozone is introduced into the reaction chamber by injection into the liquid or into the reaction chamber, while the temperature of the substrate is controlled, to chemically process the substrate. The substrate is then rinsed and dried.

Abstract: The stainless steel product has passive film on the surface, and at least one of a conductive metallic inclusion of carbide and a conductive metallic inclusion of boride protrudes through an outer surface of passive film from stainless steel under the passive film. The stainless steel product has low contact electrical resistance and suitable for use in bipolar plates of a polymer electrode fuel cell.

Abstract: Brass articles having leachable lead are contacted with an aqueous caustic solution having a pH of about 10 to about 14 that contains a chelating agent. During contact, the brass articles can be sonicated. The brass articles can be optionally pretreated by contacting them with an aqueous solution containing an organic carboxylic acid and an inorganic per-salt. The brass article can optionally further be post treated by contacting them with an aqueous solution containing sodium persulfate.

Abstract: A non-corrosive photoresist stripping and cleaning composition, comprising: (a) about 5% to about 50% of a solvent; (b) about 10% to about 90% of an alkanolamine; (c) about 0.1 to 10% of a carboxylic acid; and (d) about 1.0% to 40% of water.

Abstract: An apparatus for processing a substrate in which the substrate is successively processed with different kinds of process solution. A spin chuck supports the substrate. A driving source rotates the spin chuck A nozzle member supplies a first process solution prepared by mixing sulfuric acid and a hydrogen peroxide solution at a predetermined mixing ratio to the substrate. A switching mechanism selects the sulfuric acid, the hydrogen peroxide solution and the second process solution supplied to the nozzle member A concentration adjusting mechanism adjusts the ratio of sulfuric acid to the hydrogen peroxide solution, which collectively form the first process solution, supplied to the nozzle member. A control device controls the supply of sulfuric acid, the hydrogen peroxide solution and the second process solution, which is switched by the switching mechanism.

Abstract: A method for use in the manufacture of a microelectronic device is set forth. The method include to a first step in which a workpiece including exposed metallized surfaces and residues is provided. The workpiece, including the exposed metallized surfaces, is then treated with an alkaline, water-based solution containing one or more components that form an additive layer of an anti-corrosive compound on the exposed metallized surfaces. The solution reacts with the residues and assists in removing them from the workpiece. When the surfaces are principally include of aluminum, the solution may be include of DI water, an ammonium hydroxide based component, such as TMAH, silicic acid, and aluminum hydroxide.

Abstract: A method for removing scales formed on iron-based metal alloy containing Ni and/or Cr comprising contacting the metal alloy with a pickling solution containing nitrates and fluorides as essential components. The nitrates and fluorides used for the method are superior to the mixture of nitric acid and hydrofluoric acid in pickling efficiency, fundamental elimination of noxious gas; and optional abbreviation of pre-treatment before pickling. The pickling solution may also contain auxiliary component. A pickling composition containing nitrates and fluorides and a regenerating method of spent pickling solution is also provided.

Abstract: A method and kit are disclosed for removing or alleviating the severity or intensity of stains from aldehyde-based sterilizing solutions through the use of reducing agents. This invention is effective even for porous surfaces such as filter paper and porous nylon films as well as for smooth surfaces such as glass, aluminum, copper, brass and stainless steel. Also, the invention may be used in a variety of formats such as a kit useful for making or using solutions or gels to treat the aldehyde-based stained surfaces of, for example, medical devices, hospital bench or table tops, hospital floors and skin (if in appropriate pH range), etc.

Abstract: A method for controlled removal of a portion of a diffusion coating from the outer surface of a nickel-containing superalloy article. A diffusion coating typically includes a diffusion layer between an outer aluminide layer and the nickel-containing substrate. The method includes contacting the coated superalloy article in a preselected chemical stripping solution for a preselected period of time sufficient to remove only the outer aluminide layer, without substantially affecting the diffusion layer underlying the outer aluminide layer. After neutralizing the stripping solution, the article can be inspected and repaired as needed. The aluminide outer layer can then be restored in a conventional manner.

Abstract: A composition for treating a mineral acid using with a blend of sodium thiosulfate, sodium sulfite and trisodium phosphate. This formulation enhances the corrosion properties of a mineral acid to produce a superior acid reaction when measured in terms of corrosiveness or in terms of the time required to react with a chemical base or alkaline compound.

Abstract: A process for the chemical treatment of semiconductor wafers in the presence of HF and then in the presence of ozone, in particular for the cleaning of silicon semiconductor wafers, is such that the semiconductor wafers that are treated with the medium containing ozone are free of aqueous HF.

Abstract: In a method for processing a workpiece to remove material from a first surface of the workpiece, steam is introduced onto the first surface under conditions so that at least some of the steam condenses and forms a liquid boundary layer on the first surface. The condensing steam helps to maintain the first surface of the workpiece at an elevated temperature. Ozone is provided around the workpiece under conditions where the ozone diffuses through the boundary layer and reacts with the material on the first surface. The temperature of the first surface is controlled to maintain condensation of the steam.

Abstract: An inhibitor especially useful for aqueous solutions being used at high temperatures to remove scale from boiler tubes and the like contains (1) amines including a substituent group with an abietyl nucleus, (2) organic compounds or polymers that contain at least 2—OH moieties per molecule and at least 0.4 —OH moieties per carbon atom, (3) organic molecules that contain a carbon-sulfur bond, and (4) surfactant.

Abstract: A cleaning apparatus and a cleaning method for cleaning an object are provided. In the cleaning apparatus, a drying chamber 42 and a cleaning bath 41 are separated from each other up and down, respectively. Thus, a space in the drying chamber 42 can be insulated from a space of the cleaning bath 41 through rotary doors 59a and a slide door 72. In the cleaning method, a cleaning process in the cleaning bath 41 is carried out while sealing it by the rotary doors 59a. On the other hand, a drying process in the drying chamber 42 is accomplished while sealing and closing it by the slide door 72. Consequently, there is no possibility that, during the drying process, the object is subjected to a bad influence from a chemical treatment.

Abstract: A substrate is processed with a first process solution prepared by mixing sulfuric acid with a hydrogen peroxide solution, followed by processing the substrate with a second process solution. After the substrate is processed with the first process solution, the supply of sulfuric acid is stopped, with the hydrogen peroxide alone being supplied to the substrate. Then, the supply of the hydrogen peroxide solution is stopped, and the substrate is rinsed with a second process solution. The particular processing makes it possible to prevent the second process solution from reacting with sulfuric acid.

Abstract: A method and application of a disinfecting solution which comprises adding to an acid the chemical equivalent of a metal chloride plus a metal compound wherein the metal compound is one of a hydride, oxide or hydroxide and the metal is selected to form a precipitate with said acid. The precipitate is filtered from the solution leaving a deanionated chlorided hydronium complex that is non corrosive to human tissue yet has powerful disinfecting properties. Calcium is the preferred metal.