Abstract: In some embodiments, a method for semiconductor processing preclean includes removing an oxide layer from a substrate using anhydrous hydrogen fluoride in combination with water vapor. A system for the preclean may be configured to separate the anhydrous hydrogen fluoride and the water vapor until they are delivered to a common volume near the substrate. Corrosion within components of the system may be limited by purification of anhydrous hydrogen fluoride, passivation of components, changing component materials, and heating components. Passivation may be achieved by filling a gas delivery component with anhydrous hydrogen fluoride and allowing the anhydrous hydrogen fluoride to remain in the gas delivery component to form a passivation layer. Consistent water vapor delivery may be achieved in part by heating components using heaters.

Abstract: A coating liquid containing metal as a metal-containing coating liquid is supplied to a surface to be processed of a substrate by a coating processing unit, whereby a metal-containing coating film is formed on the surface to be processed. The substrate on which the metal-containing coating film has been formed is transported to a metal removal unit by a transport mechanism. A removal liquid for dissolving the metal is supplied to a peripheral portion of the substrate by the metal removal unit such that the metal-containing coating film remains in a region except for the peripheral portion of the surface to be processed of the substrate.

Abstract: A liquid processing apparatus includes a storage tank, a circulation line, a supply line, a return line and at least one filter. The storage tank stores a processing liquid therein. Through the circulation line, the processing liquid sent from the storage tank is returned back into the storage tank. The supply line connects the circulation line and a supply configured to supply the processing liquid onto a substrate. The return line is connected to the supply line, and the processing liquid is returned back into the storage tank from the supply line through the return line. The filter is provided in at least one of the supply line on an upstream side of a connection point between the return line and the supply line or the return line, and is configured to remove a foreign substance in the processing liquid.

Abstract: A substrate processing apparatus with efficient drying includes a chamber body having an upper opening, a chamber cover having a lower opening, and a shield plate disposed in a cover internal space of the chamber cover. With the upper opening of the chamber body covered by the chamber cover, a chamber is formed. In the cover internal space, a scanning nozzle for discharging a processing liquid toward a substrate is disposed and an inert gas is supplied and a gas is exhausted from the inside. When the processing liquid is supplied onto the substrate, the discharge part is disposed at a discharge position, and when the discharge part is dried while no processing liquid is supplied onto the substrate, the discharge part is disposed at a waiting position and the lower opening is closed by the shield plate.

Abstract: A dispensing device has a cylinder, and a piston disposed in the cylinder and moveable in priming and dispensing directions, including a first spring device biasing the piston to move in the priming direction. An operating plunger is moveable between an engaged position where it is operatively connected to the piston and movement of the operating plunger is transmitted to the piston, and a disengaged position where it is operatively disconnected from the piston, in which the operating plunger is movable between an outer and an inner point. A second spring device biases the operating plunger to move from the inner to the outer point independently of the piston. The piston has an indicator member. The operating plunger having an end wall with an aperture. When the operating plunger is at the outer point and the piston is at the cylinder's top, the indicator member is disposed in the aperture.

Abstract: A method for combinatorially processing a substrate is provided. The method includes introducing a first etchant into a reactor cell and introducing a fluid into the reactor cell while the first etchant remains in the reactor cell. After initiating the introducing the fluid, contents of the reactor cell are removed through a first removal line and a second removal line, wherein the first removal line extends farther into the reactor cell than the second removal line. A level of the fluid above an inlet to the first removal line is maintained while removing the contents. A second etchant is introduced into the reactor cell while removing the contents through the first removal line and the second removal line. The method includes continuing the introducing of the second etchant until a concentration of the second etchant is at a desired level, wherein the surface of the substrate remains submerged.

Abstract: A method for cleaning a substrate, includes supplying to a substrate having a hydrophilic surface a film-forming processing liquid which includes a volatile component and forms a film on the substrate, vaporizing the volatile component in the film-forming processing liquid such that the film-forming processing liquid solidifies or cures on the substrate and forms a processing film on the hydrophilic surface of the substrate, and supplying to the substrate having the processing film a strip-processing liquid for stripping the processing film from the substrate.

Abstract: A method for cleaning a substrate includes supplying to a substrate a film-forming processing liquid which includes a volatile component and forms a film on the substrate, vaporizing the volatile component in the film-forming processing liquid such that the film-forming processing liquid solidifies or cures on the substrate and forms a processing film on the substrate, supplying to the substrate having the processing film a strip-processing liquid which strips the processing film from the substrate, and supplying to the processing film formed on the substrate a dissolving-processing liquid which dissolves the processing film after the supplying of the strip-processing liquid.

Abstract: Process and apparatus is disclosed for providing a chemical reaction between calcium oxide containing grit particles to produce calcium hydroxide and heat, capturing the heat of hydration and using it to preheat water initially at ambient temperature, to rise to an elevated temperature to increase the amount of lime present in the water to a supersaturated lime suspension level, with the chemical reaction running to completion, followed by cooling. Heat from a water jacket may be used to raise the temperature in the lime slaker. A process and apparatus is also provided for dissolving scale on internal surfaces of a lime slaker, a lime aging tank, grit separation device and piping and dosing sub-systems, by adding acid into the system with rinse water. A pressurized delivery system that is substantially closed to atmosphere delivers treating dosing under sufficient pressure conditions to maintain a relatively constant back pressure, by means of valving.

Abstract: A substrate treatment method is provided, which includes a rinsing step of supplying a rinse liquid to a front surface of a rotating substrate after a chemical liquid step. The rinsing step includes a higher-speed rinsing step and a deceleration rinsing step to be performed after the higher-speed rinsing step. The deceleration rinsing step includes a liquid puddling step of reducing the rotation speed of the substrate within a rotation speed range lower than a rotation speed employed in the higher-speed rinsing step and supplying the rinse liquid to the front surface of the substrate at a flow rate higher than a maximum supply flow rate employed in the higher-speed rinsing step, whereby a puddle-like rinse liquid film is formed on the front surface of the substrate.

Abstract: A dishwasher for crockery or utensils, which is designed as a box-type dishwasher or as a conveyor dishwasher, wherein the dishwasher (1) has at least one wash tank (12), for accommodating a treatment fluid (20), and at least one final-rinse system, for supplying a final-rinse fluid (42). In order for it to be possible for expensive wash chemicals to be dispensed with for the most part, the dishwasher (1) also has a treatment-fluid generator (100) with at least one electrolysis device (109), wherein the treatment-fluid generator (100) is, or can be, connected to the wash tank (12) and is designed to supply an alkaline solution in the wash tank (12) of the dishwasher (1) by electrolysis.

Abstract: An apparatus comprising: a processing liquid supply unit; a volatile processing liquid supply unit; a substrate heating unit; and a controller to control the volatile processing liquid supply unit and the substrate heating unit, wherein the controller executes a process of supplying the processing liquid to the substrate, a process of heating the substrate on which a liquid film of the processing liquid is formed, a process of supplying a volatile processing liquid, a process of stopping the supply of the volatile processing liquid, and a process of drying the substrate by removing the volatile processing liquid, and wherein the process of heating the substrate starts before the process of supplying the volatile processing liquid, and the substrate heating unit heats the substrate so that the surface temperature of the substrate is higher than a dew point before the surface of the substrate is exposed from the volatile processing liquid.

Abstract: Among other things, one or more systems and techniques for removing a photoresist from a semiconductor wafer are provided. The photoresist is formed over the semiconductor wafer for patterning or material deposition. Once completed, the photoresist is removed in a manner that mitigates damage to the semiconductor wafer or structures formed thereon. In an embodiment, trioxygen liquid is supplied to the photoresist. The trioxygen liquid is activated using an activator, such as an ultraviolet activator or a hydrogen peroxide activator, to create activated trioxygen liquid used to remove the photoresist. In an embodiment, the activation of the trioxygen liquid results in free radicals that aid in removing the photoresist. In an embodiment, an initial photoresist strip, such as using a sulfuric acid hydrogen peroxide mixture, is performed to remove a first portion of the photoresist, and the activated trioxygen liquid is used to remove a second portion of the photoresist.

Abstract: A cleaning system for cleaning a cavity of food or beverage preparation device. The cavity is connected with a pipe system. The pipe system supplies a fluid through the pipe system to the cavity. When the fluid flow stops, any remainder of the fluid in the pipe system is removed by passing a gas (for example, air) through the pipe system or by a valve disposed at a high location of the pipe system.

Abstract: A special mode has a second rinsing process which supplies a rinsing liquid to a substrate while holding and rotating the substrate with a spin chuck under operating conditions different from those in a first rinsing process in a normal mode. In the second rinsing process, a processing cup is cleaned with the rinsing liquid flown off from the rotating substrate. In the second rinsing process in which the substrate is held by the spin chuck, the rinsing liquid flown off from the substrate is less prone to collide with chuck members. The provision of a mechanism designed specifically for the cleaning of the cup is not required in the special mode. The special mode is a mode executable when a substrate is present inside a chamber, and can be executed in the middle of lot processing.

Abstract: A dewaxing device and a method of dewaxing using the dewaxing device are shown. The dewaxing device includes a dewaxing system including a rinsing device and a storage device, and a recycling system connected with the storage device. The storage device includes a first solvent trough and a second solvent trough of which each is connected with the rinsing device and is equipped with a heating equipment. When the first solvent trough is connected with the rinsing device, the second solvent trough is disconnected with the rinsing device; when the second solvent trough is connected with the rinsing device, the first solvent trough is disconnected with the rinsing device. So, the dewaxing device can provide two dewaxing processes and effectively reduce recycling frequency because the recycling process is done after soluble wax quantity of bromopropane solvent reaches the maximum value 16%. The production cost is accordingly reduced.

Abstract: A substrate processing apparatus includes a first gas supply system provided with a source gas supply control unit; a second gas supply system provided with a reactive gas supply control unit; a third gas supply system provided with a cleaning gas supply control unit; a shower head unit including a buffer chamber connected to the gas supply systems and a dispersion plate installed at a downstream side of the buffer chamber; a substrate support installed at a downstream side of the dispersion plate and electrically grounded; a process chamber accommodating the substrate support; a plasma generation unit including a power supply and a switch configured to switch plasma generation between the buffer chamber and the process chamber; and a control unit configured to control the source gas supply control unit, the reactive gas supply control unit and the plasma generation unit.

Abstract: Disclosed are a liquid processing apparatus and a liquid processing method that can prevent a substrate in a processing chamber from being contaminated due to contaminants attached to a nozzle supporting arm. The liquid processing apparatus includes a processing chamber in which a substrate holder holding a substrate and a cup disposed around the substrate holder are provided; a nozzle configured to supply a fluid to the substrate held by the substrate holder; and a nozzle supporting arm configured to support the nozzle. A gas ejection mechanism is installed at the nozzle supporting arm to eject a gas toward a front end surface of the nozzle supporting arm.

Abstract: A solvent that reversibly converts from a hydrophobic liquid form to hydrophilic liquid form upon contact with water and a selected trigger, e.g., contact with CO2, is described. The hydrophilic liquid form is readily converted back to the hydrophobic liquid form and water. The hydrophobic liquid is an amidine or amine. The hydrophilic liquid form comprises an amidinium salt or an ammonium salt.

Abstract: A substrate treatment apparatus for treating a substrate with a chemical liquid in a treatment chamber. The apparatus includes a higher temperature chemical liquid supplying unit, and a rinse liquid supplying unit for rinsing away the higher temperature chemical liquid. A control unit controls a rotation unit for rotating the substrate, as well as the chemical liquid supplying unit and the rinse liquid supplying unit. The higher temperature chemical liquid is supplied while rotating the substrate at a first speed; the rinse liquid is supplied to a center portion of the substrate while rotating the substrate at a lower speed, so that the rinse liquid remains in said center portion; and then the substrate is rotated at a higher speed to spread the rinse liquid over the entire substrate while supplying the rinse liquid onto said center portion.

Abstract: Among other things, one or more techniques and systems for cleaning a scrub brush of a scrubber utilized in semiconductor fabrication are provided. In particular, a charge modification element, such as a base pH material or ammonia, is applied to the scrub brush to modify a charge of a particle on the scrub brush to a modified charge. The modified charge of the particle is similar to a charge of the scrub brush, such that the particle and the scrub brush repel one another. The particle can be detached from the scrub brush utilizing various techniques such as a de-ionized water technique or a mechanical cleaning bar technique. In this way, one or more particles can be detached from the scrub brush to clean the scrub brush of particles so that the scrub brush can be used to clean a semiconductor wafer.

Abstract: A method is provided for removing residual Ni/Pt and/or Pt from a semiconductor substrate in a post salicidation cleaning process using microwave heating of a stripping solution. Embodiments include depositing a Ni/Pt layer on a semiconductor substrate; annealing the deposited Ni/Pt layer, forming a nickel/platinum silicide and residual Ni/Pt and/or Pt; removing the residual Ni/Pt and/or Pt from the semiconductor substrate by: microwave heating a strong acid solution in a non-reactive container; exposing the residual Ni/Pt and/or Pt to the microwave heated strong acid solution; and rinsing the semiconductor substrate with water H2O.

Abstract: Apparatus, methods and systems for physically confining a liquid medium applied over a semiconductor wafer include a first and a second chemical head that are disposed to cover at least a portion of a top and an underside surface of the semiconductor wafer. Each of the first and the second chemical heads include an angled inlet conduit at a leading edge of the respective chemical heads to deliver liquid chemistry into a pocket of meniscus in a single phase. The pocket of meniscus is defined over the portion of the top and underside surface of the semiconductor wafer covered by the chemical heads and is configured to receive and contain the liquid chemistry applied to the surface of the semiconductor wafer as a meniscus. A step is formed at a leading edge of the first and second chemical heads along an outer periphery of the pocket of meniscus to substantially confine the meniscus of the liquid chemistry within the pocket of meniscus.

Abstract: There is provided a substrate processing apparatus including: a substrate holder configured to hold a substrate on which a resist pattern is formed; a rinse solution supply unit configured to supply a rinse solution onto the substrate held by the substrate holder; a vapor supply unit configured to supply vapor of a first processing solution, which hydrophobicizes the resist pattern, onto the substrate on which the rinse solution is supplied from the rinse solution supply unit; and a rinse solution removing unit configured to remove the rinse solution from the substrate in an atmosphere including the vapor of the first processing solution supplied from the vapor supply unit.

Abstract: Chemical etching methods and associated modules for performing the removal of metal from the edge bevel region of a semiconductor wafer are described. The methods and systems provide the thin layer of pre-rinsing liquid before applying etchant at the edge bevel region of the wafer. The etchant is less diluted and diffuses faster through a thinned layer of rinsing liquid. An edge bevel removal embodiment involving that is particularly effective at reducing process time, narrowing the metal taper and allowing for subsequent chemical mechanical polishing, is disclosed.

Abstract: A method and apparatus remove photoresist from a wafer. A process gas containing sulfur (S), oxygen (O), and hydrogen (H) is provided, and a plasma is generated from the process gas in a first chamber. A radical-rich ion-poor reaction medium is flown from the first chamber to a second chamber where the wafer is placed. The patterned photoresist layer on the wafer is removed using the reaction medium, and then the reaction medium flowing into the second chamber is stopped. Water vapor may be introduced in a solvation zone provided in a passage of the reaction medium flowing down from the plasma such that the water vapor solvates the reaction medium to form solvated clusters of species before the reaction medium reaches the wafer. The photoresist is removed using the solvated reaction medium.

Abstract: A first application of a cleaning material is made to a surface of a substrate. The cleaning material includes one or more viscoelastic materials for entrapping contaminants present on the surface of the substrate. A first application of a rinsing fluid is made to the surface of the substrate so as to rinse the cleaning material from the surface of the substrate. The first application of the rinsing fluid is also performed to leave a residual thin film of the rinsing fluid on the surface of the substrate. A second application of the cleaning material is made to the surface of the substrate having the residual thin film of rinsing fluid present thereon. A second application of the rinsing fluid is then made to the surface of the substrate so as to rinse the cleaning material from the surface of the substrate.

Abstract: A method for washing one or more tanks for containing aquatic animals includes inserting one or more tanks for aquatic animals to be washed into a washing chamber of a washing apparatus. A washing solution is supplied to the washing chamber and comprises an alkaline detergent in combination with hydrogen peroxide. The alkaline detergent is free from surfactants, phosphates and chlorine. A neutralizing agent is supplied to the washing chamber and also is free from surfactants, phosphates and chlorine, to re-establish a desired pH of the residual washing solution in the washing chamber.

Abstract: Disclosed is a substrate processing apparatus, a substrate processing method and a computer-readable medium capable of recovering an extended amount of discharged solution from a processing unit thereby reducing the amount of deionized water for the processing and the cost. The substrate processing apparatus includes, inter alia, a first and second discharge solution lines each connected to a downstream side of a discharge unit, and the discharged solution from each of the first and second discharge solution lines is independently delivered to the processing solution supply unit as a recovered solution. Also, the substrate processing apparatus includes a converting unit that converts flow of the discharged solution from the discharge unit either to the first discharge solution line or to the second discharge solution line. The processing solution supply unit selectively delivers the recovered solution from the first and second discharge solution lines to the processing unit.

Abstract: A process for treating the surface of a substrate in the manufacture of a semiconductor device. The process comprises providing a concentrated acid or base, a peroxide and water, and delivering the acid or base, the peroxide and the water to the surface of the substrate. The acid or base and the water are delivered separately to the surface of the substrate and allowed to mix on the surface, and the water is delivered in pulses. The present invention also provides an apparatus adapted to carry out this process.

Abstract: In an example embodiment, a linear wet system includes a carrier and a proximity head in a chamber. The proximity head includes three sections in a linear arrangement. The first section suctions liquid from the upper surface of a semiconductor wafer as the wafer is transported by the carrier under the proximity head. The second section is configured to cause a film (or meniscus) of cleaning foam which is a non-Newtonian fluid to flow onto the upper surface of the wafer. The third section is configured to cause a film of rinsing fluid to flow onto the upper surface of the wafer as the wafer is carried under the proximity head. The third section is defined partially around the second section and up to the first section, so that the third section and the first section create a confinement of the cleaning foam with respect to the chamber.

Abstract: A method for cleaning a substrate includes supplying a treatment solution which includes a volatile component onto the front surface of a substrate, solidifying or curing the treatment solution through vaporization of the volatile component of the treatment solution such that a treatment film is formed on the entire portion of the front surface of the substrate, treating a different surface of the substrate while the entire portion of the front surface of the substrate is covered with the treatment film, and supplying to the substrate a removal solution which removes the treatment film in the amount sufficient such that the treatment film covering the entire portion of the front surface of the substrate is removed substantially in entirety after the treating of the different surface of the substrate is finished.

Abstract: A dishwasher including a control device in which a wash program is stored to control a wash cycle for cleaning items to be washed. A water inlet device has a hot-water valve to take in hot water from an external hot-water supply and a cold-water valve to take in cold water from an external cold-water supply. The wash program has a wash step including an intake phase for taking in water via the water inlet device and a spraying phase for spraying the items to be washed with washing liquor containing the water that has been taken in via the water inlet device. The wash program includes a first phase of the intake phase during which the hot water is taken in via the hot-water valve and during which the temperature of the hot water that has been taken is measured by a temperature sensor.

Abstract: Systems for removing post etch polymer residue from etched surface includes a first proximity head to introduce a first cleaning chemistry as a first meniscus to a portion of the surface of the substrate so as to cover a length that extends to at least a diameter of the substrate and a first width that is less than the diameter of the substrate. A second proximity head is configured to introduce a second cleaning chemistry as a second meniscus to the portion so as to cover the length that extends to the diameter and a second width that is less than the diameter of the substrate. A substrate supporting device equipped with a motor coupled to a computing system is used to move the substrate supporting device under the first proximity head at a first linear speed and under the second proximity head at a second linear speed.

Abstract: Provided is a dry etcher including an etching device and a cleaning device, more particularly, a dry etcher including an etching device and a cleaning device to which a cleaning process is added so as to be used in a metal layer etching process. The dry etcher includes an etching device into which etching gas is injected to etch a layer formed on a substrate, a substrate transfer device transferring the substrate processed by the etching device, and a cleaning device cleaning the substrate transferred by the substrate transfer device.

Abstract: A flow through chemical sensor includes a housing having a through passage along which chemical can flow, a sidewall of the housing having first and second openings that communicate with the through passage. A first electrode is mounted on the housing and aligned with the first opening, the first electrode of a plate configuration with a unitary depression that extends through the first opening and to a peripheral edge of the through passage. A second electrode is mounted on the housing and aligned with the second opening, the second electrode of a plate configuration with a unitary depression that extends through the second opening and to the peripheral edge of the through passage. A method of detecting presence or absence of chemical is also provided.

Abstract: A method for cleaning a precision component which includes the steps of immersing the component in a heated solvating agent disposed in a pre-clean module tank to thereby remove an adherent contaminant; treating the component with a rinsing solvent to remove any remaining contaminants and residual solvating agent in a separate rinse degreaser whereby contaminants removed from the component collect in the rinse degreaser; and removing contaminated solvent from the rinse degreaser to a micro-still to separate the contaminants from the rinse solvent and direct the purified rinse solvent to the rinse degreaser. An apparatus is also provided for cleaning contaminants from a precision component including a pre-clean module tank containing a heated solvating agent, a degreaser containing a rinsing solvent, and a micro-still which separates the contaminants from the rinsing solvent and directs the purified rinsing solvent to the rinse degreaser.

Abstract: Disclosed is a liquid processing method, apparatus, and storage device for cleaning a member disposed at holding part-side of a substrate, such as a lift pin plate (including a lift pin) or a holding plate, with a rinsing liquid, thereby preventing a chemical liquid adhered to such a member from having a bad influence on the wafer. The liquid processing method includes holding the substrate by a holding part, rotating the substrate held by the holding part through a rotation driving part, and supplying a chemical liquid to a holding part-side surface of the substrate by a chemical liquid supply part. After the supply of the chemical liquid, rinsing liquid droplets are generated and supplied to the holding part-side surface of the substrate by supplying gas toward the holding part-side surface of the substrate through a gas supply part and supplying a rinsing liquid toward the holding part-side surface of the substrate through a rinsing liquid supply part.

Abstract: A substrate processing apparatus includes a chamber configured to dispose a substrate to be processed with a substrate holder, a spin chuck to rotate the substrate, a gas discharging head configured to discharge a dehumidified gas to the substrate, a processing liquid supply nozzle, an IPA supply nozzle, and a driving device configured to move the gas discharging head between a retreat position of an upper part of the chamber and an approach position near the substrate. In particular, the gas discharging head is positioned at the approach position when the IPA is supplied to the substrate so that the dehumidified gas is supplied from the gas discharging head to the substrate when the IPA is supplied to the substrate.

Abstract: A method for treating substrates with treating liquids, using a treating tank for storing the treating liquids, a holding mechanism for holding the substrates in a treating position inside the treating tank, first and second treating liquid supply devices, a temperature control device, and a control device. A first treating liquid is supplied into the treating tank, then a second treating liquid of lower surface tension and higher boiling point than the first treating liquid is supplied, and placed in a temperature range above the boiling point of the first treating liquid and below the boiling point of the second treating liquid. Then the second treating liquid supply device may be controlled to replace the first treating liquid with the second treating liquid, while controlling the temperature control device to maintain the second treating liquid in the same temperature range.

Abstract: An apparatus for cleaning a substrate includes a cleaning chamber which accommodates a substrate inside the cleaning chamber, a treatment solution supply device which supplies a treatment solution having a volatile component and capable of solidifying or being cured to form a treatment film through vaporization of the volatile component, and a removal solution supply device which supplies a removal solution capable of removing the treatment film formed on a surface of the substrate. The treatment solution supply device supplies the treatment solution on the surface of the substrate set inside the cleaning chamber, and the removal solution supply device supplies the removal solution onto the treatment film formed on the surface of the substrate.

Abstract: A substrate processing apparatus which holds and rotates a substrate substantially horizontally; having a control unit which controls a rinsing liquid supply mechanism for supplying a rinsing liquid onto the substrate; a gas knife mechanism that sprays gas onto the substrate to form a gas spraying zone and scans the entire substrate without rotating the substrate; a rinsing liquid mechanism for supplying a rinsing liquid onto the substrate at its area downstream from the gas spraying zone; and a drying unit for drying the substrate by rotating the substrate.

Abstract: A device for the disinfection, sterilization and/or maintenance of medical, in particular dental instruments. The device is optimized in various areas, facilitating the fully automatic, reliable and reproducible preparation of dental instruments.

Abstract: A control system for multiple sterilization chambers for the sterilization of medical and other instruments interact with a common vacuum pump, steam generator and ozone generator via a common controller. Instead of placing all instruments of one type in one large chamber and running one generic sterilization program followed by another such program, instruments may be grouped by the type of sterilization program needed and the sterilization programs may be run using a single pump and a single ozone generator fed into multiple sterilization chambers controlled by the controller. One smaller and less expensive vacuum pump and ozone generator may be sufficient to sterilize large amounts of medical equipment present in the total assembly of chambers. The controller may run sterilization programs in parallel fully or overlapping partially in time. Control valves governing flow passage of air, steam and ozone in and out of the chambers are also controlled by the controller.

Abstract: A method is provided for at least one of cleaning and lubricating a sprocket chain (3) while said sprocket chain remains operationally mounted on a vehicle (1). The sprocket chain is enclosed on all sides in a housing (10). The housing consists of mutually connectable upper half-shell (11) and lower half-shell (12) portions which, when connected, define a chain passageway for allowing the sprocket chain to pass through. The housing is suspended from the sprocket chain by a plurality of rollers (26) mounted within the housing. High velocity air is directed to impinge upon the sprocket chain by at least one air knife (23). A hose is connected from a compressed air supply to a tubular hose connection (21) on a surface of the upper half-shell.

Abstract: A wafer cleaning system includes a platform, a plurality of wafer holding units over the platform, a front-end rinse nozzle, and a back-end purge unit. The plurality of wafer holding units is set to define a reference plane of wafer holding. The front-end rinse nozzle is above the reference plane and configured to dispense a first rinse fluid toward the reference plane.

Abstract: A liquid processing apparatus including: a second housing; a first housing capable of being brought into contact with the second housing; a holding part configured to hold an object to be processed; a rotation driving part configured to rotate the object to be processed held by the holding part; front-side process-liquid supply nozzle configured to supply a process liquid onto a peripheral portion of a front surface of the object to be processed held by the holding part; and a storage part disposed on a side of a rear surface of the object to be processed held by the holding part, the storage part being configured to store the process liquid having been passed through the object to be processed. The respective first housing and the second housing can be moved in one direction, so that the first housing and the second housing can be brought into contact and separated from each other.

Abstract: The present disclosure provides a substrate processing apparatus including: a substrate processing chamber configured to process a substrate on which a target layer to be removed is formed on the surface of an underlying layer; a substrate holding unit provided in the substrate processing chamber and configured to hold the substrate; a mixed liquid supplying unit configured to supply a mixed liquid of sulfuric acid and hydrogen peroxide to the substrate held by the substrate holding unit in a mixing ratio of the hydrogen peroxide and a temperature that does not damage the underlying layer while removing the target layer; and an OH-group supplying unit configured to supply a fluid containing OH-group to the substrate in an amount that does not damage the underlying layer when the mixed liquid and the OH-group are mixed on the substrate.

Abstract: A liquid treatment method including: retaining a substrate with a treatment target surface being set as a lower surface, and rotating the substrate; supplying DIW (deionized water) to the lower surface of the substrate, thereby performing a rinsing process to the substrate; and thereafter supplying a mist containing IPA (isopropyl alcohol) and N2 gas, thereby substituting the IPA for the DIW. The supplying of the mist is performed using a nozzle positioned below the substrate, the nozzle comprising a plurality of ejection ports which are arrayed between a position opposing a central portion of the substrate and a position opposing a peripheral portion of the substrate.

Abstract: Apparatuses are provided for cleaning a processing component using megasonic energy including megasonic tanks, scanning megasonic plates, megasonic jets, and megasonic sweeping beams etc., in combination with selective chemistries to remove sub-micron particulate contaminants from the surfaces of the processing component that is used in cleaning semiconductor, medical, or any other processing substrates. The apparatus includes a processing chamber having a carrier element that is configured to support the processing component. The carrier element includes a mechanism to flip the processing component within the processing chamber during cleaning. A fluid supply assembly supplies a fluid to a surface of the processing component and a beam assembly equipped with a megasonic transducer is used to provide high frequency megasonic acoustic energy to the fluid during cleaning.