Abstract: An apparatus (10, 300, 400) for cleaning spray guns (18, 418) has a closed vessel (14) having an inlet (24, 424), a drain (22, 422) and a port (29) for receiving a nozzle (30) of a spray gun. A spray impeller (36, 136, 236, 336, 436) is rotatably mounted within the vessel (14) and in fluid communication with the inlet (24, 424). The spray impeller (36, 136, 236, 336, 436) has an offset cleaning nozzle (42, 44, 144, 141, 142, 242, 244, 442, 444) for projecting a cleaning spray towards the port (29) and a rotational nozzle (46, 48, 148, 246, 248, 446, 448) for projecting a rotational spray to effect rotation of the spray impeller (36, 136, 236, 336, 436). The port (29) has a seal (76, 78, 80) for sealingly receiving the spray gun (18, 418) and positioning the nozzle (30) of the spray gun in the cleaning spray.

Abstract: The invention relates to a device (1) for discharging two or more media with media nozzles (15, 25, 35) in which each media nozzle is located on a media arm (10, 20, 30), with a suspension device for each media arm, so that the media arms can perform pivoting movements separately from one another around same axis (Z). Further, the invention relates to a unit for treating in each case a disk-shaped object (2) with at least two media, with a carrier for holding the disk-shaped object.

Abstract: Reaction products produced under dry etching attach to a substrate undergoing dry etching. It is necessary to remove the reaction products for the next step. Therefore, in the case of the background art, the processing of supplying a remover for reaction products, an intermediate rinse for washing away the remover, and deionized water to a substrate in order is performed.

Abstract: Apparatus for cleaning and servicing vehicle brakes includes a caster mounted cabinet adapted to hold a small drum of cleaning solvent, the drum having an open top. A telescopic post or conduit extends upwardly from the cabinet to a hollow, hinged swing arm. A sink tray is mounted on the end of the swing arm and has a bottom drain opening that communicates with the hollow swing arm, which in turn communicates with the upright conduit to form drain piping for the sink tray. The outlet of the upright conduit empties into the solvent container in the cabinet. A pump mounted in the cabinet takes cleaning solvent from the drum and delivers it through a hose to a spray gun to be applied to the brakes to be cleaned. The telescoping post and adjustable swing arm allow the sink tray to be located directly under the brakes being cleaned to catch and return the used solvent. The cabinet also has a second basin or sink that drains into the container but can be used for cleaning parts.

Abstract: A processing apparatus is provided for cleaning a wafer W. In the apparatus, a carbonated solution in the form of mist is ejected onto the wafer W through a nozzle 41, so that the film of carbonated solution, i.e., a conductive liquid film is formed on the wafer W. Next, a pure water highly pressurized by a jet pump 47 is ejected on the wafer W for cleaning it. The film of carbonated solution prevents devices built on the wafer W from being broken electrostatically. A liquid passage 52 from a supply source 51 of the carbonated solution up to the nozzle 41 is made of material which does not dissolve its metallic components into the carbonated solution in spite of the contact of the liquid passage 52 with the carbonated solution.

Abstract: An apparatus for manufacturing a semiconductor device by forming a thin film on a substrate, comprises a cleaning process section for cleaning the substrate using a cleaning solution and a drying process section for jetting compressed gas onto the cleaned substrate, thereby removing the cleaning solution on the substrate, wherein the cleaning process section includes a nozzle body for jetting the cleaning solution onto the substrate under high pressure.

Abstract: A substrate cleaning apparatus includes a chamber having a substrate support capable of supporting and rotating a substrate in the chamber. A cleaning solution injector is provided to inject a cleaning solution onto the substrate in the chamber. A portion of the cleaning solution is thrown off the rotating substrate to form a cleaning solution mist in the chamber. A cleaning gas inlet introduces a cleaning gas into the chamber and an outlet exhausts the cleaning solution mist and cleaning gas from the chamber. This reduces the formation of residues from the cleaning solution mist on the substrate.

Abstract: The substrate processing apparatus is provided with a gas-liquid mixing nozzle for generating a process liquid mist by mixing a liquid and a pressurized gas, to discharge the process liquid mist to a substrate at high speeds. The liquid may be remover liquid, intermediate rinse liquid or deionized water. The reaction products which having been generated on the substrate in etching process is removed at high speeds with the flow of the mist, whereby the quality of the process is improved.

Abstract: A rinse tank for rinsing electronic substrates after a chemical process and a method for utilizing such rinse tank are provided. In the rinse tank, devices for performing a quick dump rinse; for performing a cascade overflow rinse and for feeding an inert gas bubbling are provided in the cavity of a single rinse tank. By utilizing the present invention novel rinse tank, the processing problems frequently observed in conventional rinse tanks where two rinse tanks are required for the quick dump rinse and for the cascade overflow rinse, such as particle re-deposition and a large floor space area requirement are eliminated. Furthermore, the wafer rinse process after a metal etching process can be accomplished in a total process time that is at least 2˜3 minutes shorter than that required by using conventional rinse tanks.

Abstract: An pressure washer enclosure capable of high pressure spraying with all pumps and chemicals enclosed for the protection of personnel and security of the chemicals. An external curbside control panel allows the operator to control the amount and concentration of the fluid emissions. A sealed plumbing arrangement minimizes chemical storage, handling and exposure. The enclosure has provisions for related cleaning equipment including a ladder rack accessible from the exterior of the housing.

Abstract: An apparatus for wet processing individual wafers comprising; a means for holding the wafer; a means for providing acoustic energy to a non-device side of the wafer; and a means for flowing a fluid onto a device side of the wafer.

Abstract: An apparatus (10, 300, 400) for cleaning spray guns (18, 418) has a closed vessel (14) having an inlet (24, 424), a drain (22, 422) and a port (29) for receiving a nozzle (30) of a spray gun. A spray impeller (36, 136, 236, 336, 436) is rotatably mounted within the vessel (14) and in fluid communication with the inlet (24, 424). The spray impeller (36, 136, 236, 336, 436) has an offset cleaning nozzle (42, 44, 144, 141, 142, 242, 244, 442, 444) for projecting a cleaning spray towards the port (29) and a rotational nozzle (46, 48, 148, 246, 248, 446, 448) for projecting a rotational spray to effect rotation of the spray impeller (36, 136, 236, 336, 436). The port (29) has a seal (76, 78, 80) for sealingly receiving the spray gun (18, 418) and positioning the nozzle (30) of the spray gun in the cleaning spray.

Abstract: This invention relates to the cleaning of objects that relate to semiconductor printing, such as, for example, screening masks. This invention is basically directed to removing, for example, an organic polymer-metal composite paste from screening masks used in printing conductive metal patterns onto ceramic green sheets in the fabrication of semiconductor packaging substrates. More particularly, this invention is concerned with the automated in-line cleaning of paste screening masks with an aqueous alkaline solution of a quaternary ammonium hydroxide as a more environmentally friendly alternative to non-aqueous organic solvents-based cleaning in screening operations for the production multilayer ceramic (MLC) substrates.

Abstract: A control unit controls a lifter to raise at least part of each of a group of substrates above the liquid level of a treating liquid in a treating bath. Thereafter, a valve is opened to drain the treating liquid from the treating bath at a high speed. As a result, a physical force to tilt and adhere an upper portion of the adjacent substrates accompanied by lowering of the liquid level of the treating liquid due to the high speed drainage acts upon a lower portion of the substrates near the lowered liquid level of the treating liquid, thereby reducing the physical force exerted on the substrates. This arrangement, even if a holding interval between the substrates is narrowed at a half of a normal pitch, eliminates a contact of the adjacent substrates and prevents damage of the substrates due to the contact without providing an additional member such as a substrate support guide in the treating bath.

Abstract: A method for etching substrates, comprising providing at least a first and a second substrate having a coating selected from the group consisting of semiconductor coatings, metallic coatings, and mixtures thereof and introducing at least the first substrate and an etchant into a first tank to etch at least a portion of the coating from the first substrate, introducing at least the second substrate into a second tank and transferring the etchant from the first tank to the second tank to provide etch of at least a portion of the coatings from the second substrate, and removing the etched first substrate from the first tank.

Abstract: Where a substrate such as a semiconductor wafer held in a process space in a process chamber consisting of an outside chamber and an inside chamber is subjected to a cleaning processing, a chemical agent such as IPA or a solvent having a surfactant added thereto is supplied in the form of a mist or a vapor toward the substrate under the sate that the substrate is stopped or rotated at a low speed after processing with a chemical agent and a subsequent rinsing processing with a pure water. After the supply of the chemical agent is stopped, the substrate is rotated at a rotating speed higher than said low speed so as to centrifugally remove the chemical agent attached to the substrate.

Abstract: A method and apparatus for rinsing and drying semiconductor wafers. The apparatus includes side walls, end walls and a base. At least a portion of the wall descends relative to the base to facilitate the flow of liquid from the chamber. One embodiment of the apparatus includes a rigid side and end walls. In another embodiment of the apparatus, at least a portion of the side wall is collapsible. In yet another embodiment of the apparatus, at least a portion of the wall has a tambour configuration, facilitating bending or rolling of the wall beneath the base. The apparatus includes an assembly for injecting a rinse liquid into the chamber. The method includes placing a semiconductor wafer into a rinse/dry apparatus, directing rinse liquid over the semiconductor wafer, and lowering a side wall of the rinse/dry apparatus to remove rinse liquid therefrom. The apparatus also includes an assembly for injecting a drying fluid into the chamber.

Abstract: A to-be-cleaned substrate is cleaned by use of an acid liquid agent in a cleaning cup, the remaining acid liquid agent is washed out by use of pure water, then an alkaline liquid agent is emitted to the surface of the to-be-cleaned substrate in the same cleaning cup to remove the acid liquid agent remaining on the to-be-cleaned substrate. A neutralization reaction between the acid and alkali is caused by emitting the alkaline liquid agent to the surface of the to-be-cleaned substrate so as to efficiently remove the acid liquid agent remaining on the surface of the to-be-cleaned substrate.

Abstract: A substrate is processed with a first process solution prepared by mixing sulfuric acid with a hydrogen peroxide solution, followed by processing the substrate with a second process solution. After the substrate is processed with the first process solution, the supply of sulfuric acid is stopped, with the hydrogen peroxide alone being supplied to the substrate. Then, the supply of the hydrogen peroxide solution is stopped, and the substrate is rinsed with a second process solution. The particular processing makes it possible to prevent the second process solution from reacting with sulfuric acid.

Abstract: A machine for cleaning containers has inside and outside arrays of nozzles arranged to spray a cleaning solution onto containers supported on a spinning rotor. Used cleaning solution is diverted to a reclaim tank for reuse, thereby allowing low-cost cleaning with concentrated chemicals, and with the creation of less liquid waste requiring disposal. In a method for removing contaminants from flat media or silicon wafer containers or carriers, a mixture of surfactant and de-ionized water is sprayed onto containers on a spinning rotor. The used cleaning solution is collected, filtered and reused.

Abstract: An apparatus for supplying a mixture of a treatment liquid and ozone for treatment of a surface of a workpiece, and a corresponding method are set forth The preferred embodiment of the apparatus comprises a liquid supply line that is used to provide fluid communication between a reservoir containing the treatment liquid and a treatment chamber housing the workpiece. A heater is disposed to heat the workpiece, either directly or indirectly. Preferably, the workpiece is heated by heating the treatment liquid that is supplied to the workpiece. One or more nozzles accept the treatment liquid from the liquid supply line and spray it onto the surface of the workpiece while an ozone generator provides ozone into an environment containing the workpiece.

Abstract: An improved dishwashing machine is proposed which has a dish-cleaning compartment, a dish-rack rotating mechanism, a re-circulating fluid spraying system, a non re-circulating fluid spraying system, a drainage mechanism, a waste filter tank and a controlling means. The dish-cleaning compartment consists of a cover and a casing, which includes a re-circulating fluid spray arm and a non re-circulating fluid spray arm. Automatic chemical dispenser, hot air dish-drying system and ultraviolet light sterilizer are included as optional features. Dish-cleaning operation starts with a flush cycle and then follows by a wash cycle and a rinse cycle. A dish-drying operation is introduced at the end of the rinse cycle, to dry as well as to sanitize dishes.

Abstract: A parts washing system comprises a wash liquid holding tank having a return opening, a rinse liquid holding tank also having a return opening, a wash chamber with drain port situated above both the wash liquid holding tank and the rinse liquid holding tank, a parts carrier movable from a loading position outside the wash chamber to a position inside the wash chamber, a nozzle adapted to direct liquid from one of the holding tanks into the wash chamber, at least one pump for transferring wash liquid and rinse liquid from the wash liquid holding tank and the rinse liquid holding tank to the spray nozzle, and a substantially L-shaped liquid diverter. The L-shaped liquid diverter is rotatably mounted at the drain port of the wash chamber for rotation in a substantially vertical plane. The L-shaped liquid diverter has an outlet end for dispensing liquid from the wash chamber to one of the wash liquid holding tank and the rinse liquid holding tank.

Abstract: A substrate is processed with a first process solution prepared by mixing sulfuric acid with a hydrogen peroxide solution, followed by processing the substrate with a second process solution. After the substrate is processed with the first process solution, the supply of sulfuric acid is stopped, with the hydrogen peroxide alone being supplied to the substrate. Then, the supply of the hydrogen peroxide solution is stopped, and the substrate is rinsed with a second process solution. The particular processing makes it possible to prevent the second process solution from reacting with sulfuric acid.

Abstract: A substrate processing apparatus (1) for processing wafers (W) has a first processing chamber (2) capable of containing the wafers (W) and a second processing chamber (4) capable of containing the wafers (W). The second processing chamber (4) is formed below and near the first processing chamber (2) and is capable of communicating with the first processing chamber (2). A wafer guide (6) carries the wafers (W) vertically between the first and second processing chambers (2, 4). A shutter (7) is opened to allow the first and second processing chambers (2, 4) to communicate with each other and is closed to isolate the same from each other. A steam supply system (8) including steam supply port, an ozone gas supply system (9) including ozone gas supply port and an IPA supply system (10) including IPA supply port are combined with the first processing chamber (2).

Abstract: A plurality of cleaning devices of the same type are attached to one support arm. The cleaning devices are simultaneously moved over a surface to be cleaned of a substrate supported and spun by a substrate supporting and spinning mechanism. Thus, the same type of cleaning devices share the task of cleaning the entire surface of the substrate, thereby to improve cleaning efficiency and shorten cleaning time. Different types of cleaning devices may be attached to the support arm for simultaneous cleaning of the entire surface of the substrate. Where different types of cleaning brushes are attached to the support arm, a cleaning operation may be carried out by simultaneously using cleaning brushes of optimal hardness for different regions on the substrate surface.

Abstract: An apparatus for removing photo-resist. The apparatus comprises carriers for carrying a wafer, hot plates to remove residue solvent on the wafer, a cooling plate to decrease the wafer temperature, an reverse unit to turn over the wafer, a development unit to develop and remove photo-resist on the wafer, a top scrubbing unit to clean a top side of the wafer, and a back scrubbing unit to clean a back side of the wafer.

Abstract: A method and device for cleaning vertically suspended lamellar blinds in collapsed state, is provided having a supply unit with a moveable supply container and functional elements for generating a fluid stream as well as a suspended spay device which is supported by the lamellae and comprises a spray head and a jacket foil enclosing the lamellar blind. The supply container is designed to be used separately with a washing solution or a rinse solution and is equipped with a pump, a pressurized line leading to the spray head and a return line. The pressurized line comprises a dual manifold disposed at the top and the return line has a connection at the top as well as a connection at the bottom.

Abstract: A washing machine for lamellar blinds includes a moveable wash container operationally connected to a transportable shower head, which is also operationally connected to a catch basin. For easy handling and transport, the outside dimensions of the catch basin (2) are matched to the inside dimensions of the wash container (1). The catch basin (2) is constructed such that it can be inserted into the wash container (1).

Abstract: An apparatus for washing glasses and other articles, includes a washing compartment and a plurality of fluid outlets. A tray for retaining the glasses and other articles is positionable in the washing compartment. The tray has at least one fluid directing nozzle which is alignable with the fluid outlets in the washing compartment to permit fluid to flow from the nozzles through the tray and to direct the fluid into contact with the glasses and other articles. In a preferred embodiment, at least a portion of the fluid contacts the glasses substantially tangentially. A method for washing glasses and other articles is also disclosed.

Abstract: An apparatus for supplying a mixture of a treatment liquid and ozone for treatment of a surface of a workpiece, and a corresponding method are set forth. The preferred embodiment of the apparatus comprises a liquid supply line that is used to provide fluid communication between a reservoir containing the treatment liquid and a treatment chamber housing the workpiece. A heater is disposed to heat the workpiece, either directly or indirectly. Preferably, the workpiece is heated by heating the treatment liquid that is supplied to the workpiece. One or more nozzles accept the treatment liquid from the liquid supply line and spray it onto the surface of the workpiece while an ozone generator provides ozone into an environment containing the workpiece.

Abstract: Method and apparatus for cleaning and/or drying objects that may have been wetted or contaminated in a manufacturing process. The objects are submerged in a rinse liquid in an enclosed chamber, and aerosol particles from a selected liquid are introduced into the chamber above the rinse liquid surface, forming a thin film on this surface. As the rinse liquid is slowly drained, some aerosol particles settle onto the exposed surfaces of the objects, and displace and remove rinse liquid residues from the exposed surfaces by a “chemical squeegeeing” effect. Surface contaminants are also removed by this process. Chamber pressure is maintained at or near the external environment pressure as the rinse liquid is drained from the chamber. Inert gas flow is employed to provide aerosol particles of smaller size and/or with greater dispersion within the chamber. Continuous filtering and shunt filtering are employed to remove most contaminants from the selected liquid.

Abstract: A substrate treatment process is disclosed to remove organic matter existing on a substrate such as a wafer, glass substrate or ceramic. The process comprises treating the substrate with ozone water and then with hydrogen water, or treating the substrate with ozone-hydrogen water or treating the substrate with ozone water and hydrogen water at the same time. A substrate treatment apparatus is also disclosed for a substrate. The apparatus comprises a treatment vessel, a substrate holder for rotating the substrate in a horizontal plane in the treatment vessel, a nozzle unit arranged in an upper part of the treatment vessel such that a liquid is downwardly fed, a feed line for feeding the liquid to the nozzle unit, and a chamber enclosing therein the apparatus in its entirety.

Abstract: A heated high pressure air and/or a high pressure water are spouted through nozzles. Therefore, the coated layer is removed without crushing the bumper unlike in the conventional method, and therefore, a plurality of process steps can be skipped. Thus the bulk of the apparatus can be reduced, the operating cost can be lowered, and the environment can be protected. The method for removing a coated layer includes the step of installing a bumper to be subjected to a removal of the coated layer. Then the coated layer is removed from the bumper by spouting water and/or a pre-heated air to the bumper. Then the bumper is carried to a predetermined psition after removing the coated layer, and then the bumper is detached. The apparatus includes an installing/detaching means for installing/detaching the bumper to be subjected to a removal of the coated layer.

Abstract: A substrate processing apparatus (1) for processing wafers (W) has a first processing chamber (2) capable of containing the wafers (W) and a second processing chamber (4) capable of containing the wafers (W). The second processing chamber (4) is formed below and near the first processing chamber (2) and is capable of communicating with the first processing chamber (2). A wafer guide (6) carries the wafers (W) vertically between the first and second processing chambers (2, 4). A shutter (7) is opened to allow the first and second processing chambers (2, 4) to communicate with each other and is closed to isolate the same from each other. A steam supply system (8) including steam supply port, an ozone gas supply system (9) including ozone gas supply port and an IPA supply system (10) including IPA supply port are combined with the first processing chamber (2).

Abstract: A washing/drying process apparatus comprises a spin chuck for holding a substrate such that a surface thereof to be processed faces upward and for rotating the substrate, a process fluid supply mechanism for selectively supplying one or two or more of a plurality of kinds of process fluids to the surface to be processed of the substrate rotated by the spin chuck, the process fluid supply mechanism having a first nozzle with a discharge port for discharging a process fluid which is in a liquid phase under conditions of room temperature and atmospheric pressure, and a second nozzle with a discharge port for discharging fluid which is in a gas phase under conditions of room temperature and atmospheric pressure, a driving mechanism for simultaneously moving the first and second nozzles to a location above the substrate held by the spin chuck, and a controller for controlling operations of the process liquid supply mechanism and the driving mechanism.

Abstract: An apparatus of cleaning a nozzle comprising a mounting table for mounting a substrate to be processed, a process liquid nozzle having a liquid output portion for outputting a process liquid toward the substrate mounted on the table, a nozzle cleaning mechanism having a fluid spray portion for spraying a cleaning fluid onto the liquid output portion of the process liquid nozzle to remove an attached material from the liquid output portion by the cleaning fluid sprayed from the fluid spray portion, and a nozzle moving mechanism for moving the process liquid nozzle between the mounting table and the nozzle cleaning mechanism.

Abstract: A heated high pressure air and/or a high pressure water are spouted through nozzles. Therefore, the coated layer is removed without crushing the bumper unlike in the conventional method, and therefore, a plurality of process steps can be skipped. Thus the bulk of the apparatus can be reduced, the operating cost can be lowered, and the environment can be protected. The method for removing a coated layer includes the step of installing a bumper to be subjected to a removal of the coated layer. Then the coated layer is removed from the bumper by spouting water and/or a pre-heated air to the bumper. Then the bumper is carried to a predetermined psition after removing the coated layer, and then the bumper is detached. The apparatus includes an installing/detaching means for installing/detaching the bumper to be subjected to a removal of the coated layer.

Abstract: A method for recovering impurities on a surface of a silicon wafer includes a first step of using a pretreatment solution to decompose an oxide film, a nitride film on an oxynitridation film formed at a peripheral portion on a surface of a silicon wafer and to remove impurities on the peripheral portion and a second step of recovering impurities on the surface of the wafer expect for the peripheral portion.