Abstract: The present invention provides a thermoelectric conversion material of which the structure is controlled to have nano-order microscopic pores and which has a low thermal conductivity and has an improved thermoelectric performance index. In the thermoelectric conversion material having a thermoelectric semiconductor layer formed on a block copolymer substrate that comprises a block copolymer having microscopic pores, wherein the block copolymer comprises a polymer unit (A) formed of a monomer capable of forming a homopolymer having a glass transition temperature of 50° C. or higher, and a polymer unit (B) formed of a conjugated dienic polymer.

Abstract: A thermoelectric material including a compound represented by Formula 1 below: (R1-aR?a)(T1-bT?b)3±y??Formula 1 wherein R and R? are different from each other, and each includes at least one element selected from a rare-earth element and a transition metal, T and T? are different from each other, and each includes at least one element selected from sulfur (S), selenium (Se), tellurium (Te), phosphorus (P), arsenic (As), antimony (Sb), bismuth (Bi), carbon (C), silicon (Si), germanium (Ge), tin (Sn), boron (B), aluminum (Al), gallium (Ga), and indium (In), 0?a?1, 0?b?1, and 0?y<1.

Abstract: The inventors demonstrate herein that homogeneous Ag-doped PbTe/Ag2Te composites exhibit high thermoelectric performance (˜50% over La-doped composites) associated with an inherent temperature induced gradient in the doping concentration caused by the temperature-dependent solubility of Ag in the PbTe matrix. This method provides a new mechanism to achieve a higher thermoelectric efficiency afforded by a given material system, and is generally applicable to other thermoelectric materials.

Abstract: A metal mixture is prepared, in which an excess amount of Te is added to a (Bi—Sb)2Te3 based composition. After melting the metal mixture, the molten metal is solidified on a surface of a cooling roll of which the circumferential velocity is no higher than 5 m/sec, so as to have a thickness of no less than 30 ?m. Thus, a plate shaped raw thermoelectric semiconductor materials 10 are manufactured, in which Te rich phases are microscopically dispersed in complex compound semiconductor phases, and extending directions of C face of most of crystal grains are uniformly oriented. The raw thermoelectric semiconductor materials 10 are layered in the direction of the plate thickness. And the layered body is solidified and formed to form a compact 12. After that, the compact 12 is plastically deformed in such a manner that a shear force is applied in a uniaxial direction that is approximately parallel to the main layering direction of the raw thermoelectric semiconductor materials 10.

Abstract: A thermoelectric composite and a thermoelectric device and a method of making the thermoelectric composite. The thermoelectric composite is a semiconductor material formed from mechanically-alloyed powders of elemental constituents of the semiconductor material to produce nano-particles of the semiconductor material, and compacted to have at least a bifurcated grain structure. The bifurcated grain structure has at least two different grain sizes including small size grains in a range of 2-200 nm and large size grains in a range of 0.5 to 5 microns. The semiconductor material has a figure of merit ZT, defined as a ratio of the product of square of Seebeck coefficient, S2, and electrical conductivity ? divided by the thermal conductivity k, which varies from greater than 1 at 300 K to 2.5 at temperatures of 300 to 500K.

Abstract: Thermoelectric materials with high figures of merit, ZT values, are disclosed. In many instances, such materials include nano-sized domains (e.g., nanocrystalline), which are hypothesized to help increase the ZT value of the material (e.g., by increasing phonon scattering due to interfaces at grain boundaries or grain/inclusion boundaries). The ZT value of such materials can be greater than about 1, 1.2, 1.4, 1.5, 1.8, 2 and even higher. Such materials can be manufactured from a thermoelectric starting material by generating nanoparticles therefrom, or mechanically alloyed nanoparticles from elements which can be subsequently consolidated (e.g., via direct current induced hot press) into a new bulk material. Non-limiting examples of starting materials include bismuth, lead, and/or silicon-based materials, which can be alloyed, elemental, and/or doped. Various compositions and methods relating to aspects of nanostructured thermoelectric materials (e.g., modulation doping) are further disclosed.

Abstract: Provided is a thermoelectric conversion material which is composed of Bi2-xMnxSe3, is single-crystalline, and has a p-type carrier.

Abstract: A thermoelectric material includes a semiconductor substrate, a semiconductor oxide film formed on the substrate, and a thermoelectric layer provided on the oxide film. The semiconductor oxide film has a first nano-opening formed therein. The thermoelectric layer has such a configuration that semiconductor nanodots are piled up on or above the first nano-opening so as to form a particle packed structure. At least some of the nanodots each have a second nano-opening formed in its surface, and are connected to each other through the second nano-opening with their crystal orientation aligned. The thermoelectric material is produced through steps of oxidizing the substrate to form the semiconductor oxide film thereon, forming the first nano-opening in the oxide film, and epitaxially growing to pile up the plurality of nanodots on the first nano-opening. As a result, it is possible to provide the thermoelectric material superior in thermoelectric conversion performance.

Abstract: A thermoelectric device based on a multilayer structure having alternate layers of metal/material mixture. The alternate layers have differing metal content. The layer structure is irradiated with ionizing radiation to produce nanoclusters in the layers. The differing metal content serves to quench the nanoclusters to isolate nanoclusters along the radiation track. The result is a thermoelectric device with a high figure of merit. In one embodiment, the multilayer structure is fabricated and then irradiated with high energy radiation penetrating the entire layer structure. In another embodiment, layers are irradiated sequentially during fabrication using low energy radiation.

Abstract: A thermoelectric material that comprises a binary main group matrix material and nano-particles and/or nano-inclusions of metal oxide dispersed therein, and has electrical properties of ternary doped materials. A process for making the thermoelectric material that includes reacting a reduced metal precursor with an oxidized metal precursor in the presence of nanoparticles.

Abstract: A nano scale hetero structure tellurium-based nanowire structure is disclosed including a dumbbell-like crystalline heterostructure having a center rod-like portion and one octahedral structure connected to each end of each of the center rod-like portions, wherein the center rod-like portion is a bismuth-telluride nanowire structure and the octahedral structures are lead telluride.

Abstract: A thermoelectric material that comprises a ternary main group matrix material and nano-particles and/or nano-inclusions of a Group 2 or Group 12 metal oxide dispersed therein. A process for making the thermoelectric material that includes reacting a reduced metal precursor with an oxidized metal precursor in the presence of nanoparticles.

Abstract: A method of producing a nanocomposite thermoelectric conversion material includes preparing a solution that contains salts of a plurality of first elements constituting a thermoelectric conversion material, and a salt of a second element that has a redox potential lower than redox potentials of the first elements; precipitating the first elements, thereby producing a matrix-precursor that is a precursor of a matrix made of the thermoelectric conversion material, by adding a reducing agent to the solution; precipitating the second element in the matrix-precursor, thereby producing slurry containing the first elements and the second element, by further adding the reducing agent to the solution; and alloying the plurality of the first elements, thereby producing the matrix (70) made of the thermoelectric conversion material, and producing nano-sized phonon-scattering particles (80) including the second element, which are dispersed in the matrix (70), by filtering and washing the slurry, and then, heat-treating t

Abstract: A thermoelectric material and a method of making a thermoelectric material are provided. In certain embodiments, the thermoelectric material comprises at least 10 volume percent porosity. In some embodiments, the thermoelectric material has a zT greater than about 1.2 at a temperature of about 375 K. In some embodiments, the thermoelectric material comprises a topological thermoelectric material. In some embodiments, the thermoelectric material comprises a general composition of (Bi1-xSbx)u(Te1-ySey)w, wherein 0?x?1, 0?y?1, 1.8?u?2.2, 2.8?w?3.2. In further embodiments, the thermoelectric material includes a compound having at least one group IV element and at least one group VI element. In certain embodiments, the method includes providing a powder comprising a thermoelectric composition, pressing the powder, and sintering the powder to form the thermoelectric material.

Abstract: In a process for producing thermoelectric materials with a polyphasic structure, in which particles of a first phase with a characteristic length of not more than 10 ?m are present in homogeneous dispersion in a second phase, by self-assembly, an a least binary thermoelectric material is melted together with a metal which is not a component of the at least binary thermoelectric material, or a chalcogenide of said metal, and, after mixing, is cooled or bonded by reactive grinding.

Abstract: Compound semiconductors, expressed by the following formula: Bi1-xMxCuwOa-yQ1yTeb-zQ2z. Here, M is at least one element selected from the group consisting of Ba, Sr, Ca, Mg, Cs, K, Na, Cd, Hg, Sn, Pb, Eu, Sm, Mn, Ga, In, Tl, As and Sb; Q1 and Q2 are at least one element selected from the group consisting of S, Se, As and Sb; x, y, z, w, a, and b are 0?x<1, 0<w?1, 0.2<a<4, 0?y<4, 0.2<b<4 and 0?z<4. These compound semiconductors may be used for various applications such as solar cells or thermoelectric conversion elements, where they may replace compound semiconductors in common use, or be used along with compound semiconductors in common use.

Abstract: The p- or n-conductive semiconductor material comprises a compound of the general formula (I) SnaPb1-a-(x1+ . . . +xn)A1x1 . . . Anxn(Te1-p-q-rSepSqXr)1+z??(I) where 0.05<a<1 n?1 where n is the number of chemical elements different than Sn and Pb in each case independently 1 ppm?x1 . . . xn?0.05 A1 . . . An are different from one another and are selected from the group of the elements Li, Na, K, Rb, Cs, Mg, Ca, Y, Ti, Zr, Hf, Nb, Ta, Cr, Mn, Fe, Cu, Ag, Au, Ga, In, Tl, Ge, Sb, Bi X is F, Cl, Br or I 0?p?1 0?q?1 0?r?0.01 ?0.01?z?0.01 with the condition that p+q+r?1 and a+x1+ . . . +xn?1.

Abstract: A thermoelectric material including a compound represented by Formula 1: MxBiy?aAaSez?bQb ??Formula 1 wherein, 1<x<2, 4<y?a<5, 7<z?b<9, 0?a<5, and 0?b<9; M is at least one transition metal element; A is at least one element of Groups 13 to 15; and Q is at least one element of Groups 16 to 17.

Abstract: Thermoelectric elements may be used for heat sensors, heat pumps, and thermoelectric generators. A quantum-dot or nano-scale grain size polycrystalline material the effects of size-quantization are present inside the nanocrystals. A thermoelectric element composed of densified Groups IV-VI material, such as calcogenide-based materials are doped with metal or chalcogenide to form interference barriers form along grains. The dopant used is either silver or sodium. These chalcogenide materials form nanoparticles of highly crystal grains, and may specifically be between 1- and 100 nm. The compound is densified by spark plasma sintering.

Abstract: A structure of a thermoelectric film including a thermoelectric substrate and a pair of first diamond-like carbon (DLC) layers is provided. The first DLC layers are respectively located on two opposite surfaces of the thermoelectric substrate and have electrical conductivity.

Abstract: A composite material with tailored anisotropic electrical and thermal conductivities is described. A material consists of a matrix material containing inclusions with anisotropic geometrical shapes. The inclusions are arranged in layers oriented perpendicular to the principal direction of electrical and thermal energy flow in the material. The shapes of the inclusions are such that they represent strong or weak barriers to energy flow depending on whether the major axis of the inclusions are parallel to or antiparallel to the flow direction.

Abstract: According to various aspects, exemplary embodiments are provided of thermoelectric materials, which embodiments may have improved figure of merit. In one exemplary embodiment, a thermoelectric material generally includes bismuth telluride nanoparticles, which may be undoped or doped with at least one or more of silver, antimony, tin, and/or a combination thereof. The bismuth telluride nanoparticles may be dispersed in a matrix material comprising particulate bismuth telluride. Methods for making undoped and doped bismuth telluride nanoparticles are also disclosed, which may include a solvothermal method for making bismuth telluride nanoparticles having a size ranging from 1 to 200 nanometers.

Abstract: This disclosure examines using lead telluride nanocrystals as well as other materials suitable for thermoelectric conversion, particularly materials with high Figure of Merit values, as coatings on flexible substrates. This disclosure also examines using flexible substrates with lead telluride nanocrystal coatings as sensors.

Abstract: A thermoelectric material including a 3-dimensional nanostructure, wherein the 3-dimensional nanostructure includes a 2-dimensional nanostructure connected to a 1-dimensional nanostructure.

Abstract: The thermoelectric module with bi-tapered thermoelectric pins is a semiconductor device configured as a thermoelectric power generator that has pins made of Bismuth Telluride that attach to a ceramic hot plate and a ceramic cold plate to form a thermoelectric module (TEM). The pins will include at least one N-doped pin and one P-doped pin. The bi-tapered pin structure of the TE pins exhibits low maximum thermal stress as predicted by thermal analysis, thereby maintaining thermal, electrical, and mechanical integrity of the TEM device.

Abstract: A p- or n-conductive semiconductor material comprises a compound of the general formula (I) Pb1?(x1+x2+ . . . +xn)A1x1A2x2 . . . AnxnTe1+z??(I) where: in each case independently n is the number of chemical elements different from Pb and Te 1 ppm?x1 . . . xn?0.05 ?0.05?z?0.05 and n?2 A1 . . . An are different from one another and are selected from the group of the elements Li, Na, K, Rb, Cs, Be, Mg, Ca, Sr, Ba, Al, Ga, In, Tl, Si, Ge, Sn, As, Sb, Bi, S, Se, Br, I, Sc, Y, La, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, Hg, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu or n=1 A1 is selected from Ti, Zr, Ag, Hf, Cu, Gr, Nb, Ta.

Abstract: A thermoelectric device (31) includes a plurality of alternating p-type and n-type semiconductor thermoelectric elements (32, 34, 36; 33, 35 37) the elements (32-37) being separated by electrically and thermally conductive interconnects (40-45), alternating interconnects (40-44) extending in an opposite direction from interconnects (41-45) interspersed therewith. Each thin-film element comprises several hundred thermoelectric alloy A superlattice thin-films interspersed with several hundred thermoelectric alloy B superlattice thin-films, the thin-film elements being between 5 and 25 microns thick and preferably over 10 microns thick. The thin-film elements may be interspersed with opposite type thin-film elements or with opposite type bulk elements (33a, 34a). The interconnects are preferably joined to the elements by diffusion bonding.

Abstract: A thermoelectric device including: a thermoelectric material layer comprising a thermoelectric material; a transition layer on the thermoelectric material; and a diffusion prevention layer on the transition layer, wherein the thermoelectric material comprises a compound of Formula 1: (A1-aA?a)4-x(B1-bB?b)3-y-zCz??Formula 1 wherein A and A? are different from each other, A is a Group 13 element, and A? is at least one element of a Group 13 element, a Group 14 element, a rare-earth element, or a transition metal, B and B? are different from each other, B is a Group 16 element, and B? is at least one element of a Group 14 element, a Group 15 element, or a Group 16 element, C is at least one halogen atom, a complies with the inequality 0?a<1, b complies with the inequality 0?b<1, x complies with the inequality ?1<x<1, y complies with the inequality ?1<y<1, and z complies with 0?z<0.5.

Abstract: A metal mixture is prepared, in which an excess amount of Te is added to a (Bi—Sb)2Te3 based composition. After melting the metal mixture, the molten metal is solidified on a surface of a cooling roll of which the circumferential velocity is no higher than 5 m/sec, so as to have a thickness of no less than 30 ?m. Thus, a plate shaped raw thermoelectric semiconductor materials 10 are manufactured, in which Te rich phases are microscopically dispersed in complex compound semiconductor phases, and extending directions of C face of most of crystal grains are uniformly oriented. The raw thermoelectric semiconductor materials 10 are layered in the direction of the plate thickness. And the layered body is solidified and formed to form a compact 12. After that, the compact 12 is plastically deformed in such a manner that a shear force is applied in a uniaxial direction that is approximately parallel to the main layering direction of the raw thermoelectric semiconductor materials 10.

Abstract: The invention is a bulk-processed thermoelectric material and a method for fabrication. The material measures at least 30 microns in each dimension and has a figure of merit (ZT) greater than 1.0 at any temperature less than 200° C. The material comprises at least two constituents; a host phase and a dispersed second phase. The host phase is a semiconductor or semimetal and the dispersed phase of the bulk-processed material is comprised of a plurality of inclusions. The material has a substantially coherent interface between the host phase and the dispersed phase in at least one crystallographic direction.

Abstract: Thermoelectric materials and flexible polymer-based thermoelectric materials that may be applied to fabrics for use as personal cooling/heating clothes and portable power source.

Abstract: A thermoelectric apparatus includes a first and a second assemblies, at least a first and a second heat conductors. The first assembly includes a first and a second substrates, and several first thermoelectric material sets disposed between the first and second substrates. The first substrate has at least a first through hole. The second assembly includes a third and a fourth substrates, and several second thermoelectric material sets disposed between the third and fourth substrates. The fourth substrate has at least a second through hole. Each of the first and second thermoelectric material sets has a p-type and an n-type thermoelectric element. The first and second heat conductors respectively penetrate the first and second through holes. Two ends of the first heat conductor respectively connect the second and fourth substrates, while two ends of the second heat conductor respectively connect the first and third substrates.

Abstract: A method of drawing a glass clad wire is provided herein, the method comprising: (i) sealing off one end of a glass tube such that the tube has an open end and a closed end; (ii) introducing a wire material inside the glass tube; (iii) heating a portion of the glass tube such that the glass partially melts to form a first ampoule containing the wire material to be used in a drawing operation; (iv) introducing the first ampoule containing the wire material into a heating device; (v) increasing the temperature within the heating device such that the glass tube is heated enough for it to be drawn and wire material melts; and (vi) drawing the glass clad wire comprising a continuous wire of wire material, wherein the wire material is a metal, semi-metal, alloy, or semiconductor thermoelectrically active material, and wherein the wire diameter is equal to or smaller than about 5 ?m.

Abstract: A thermoelectric material that comprises a ternary main group matrix material and nano-particles and/or nano-inclusions of transition metal oxide dispersed therein. A process for making the thermoelectric material that includes reacting a reduced metal precursor with an oxidized metal precursor in the presence of transition metal oxide nanoparticles.

Abstract: Doped and partially-reduced oxide (e.g., SrTiO3-based) thermoelectric materials. The thermoelectric materials can be single-doped or multi-doped (e.g., co-doped) and display a thermoelectric figure of merit (ZT) of 0.2 or higher at 1050K. Methods of forming the thermoelectric materials involve combining and reacting suitable raw materials and heating them in a graphite environment to at least partially reduce the resulting oxide. Optionally, a reducing agent such as titanium carbide can be incorporated into the starting materials prior to the reducing step in graphite. The reaction product can be sintered to form a dense thermoelectric material.

Abstract: Disclosed is a new thermoelectric conversion material represented by the chemical formula 1: Bi1-xCu1-yO1-zTe, where 0?x<1, 0?y<1, 0?z<1 and x+y+z>0. A thermoelectric conversion device using said thermoelectric conversion material has good energy conversion efficiency.

Abstract: A thermoelectric converter is made of a first thermoelectric conversion material in which at least one type of second thermoelectric conversion material particles having an average size of 1 to 100 nm is dispersed. At least a part of the second thermoelectric conversion material particles is dispersed at a distance not more than the mean free path of the phonons of the first thermoelectric conversion material.

Abstract: A thermoelectric material includes a compound represented by Formula 1: AaRbG3±n??Formula 1 wherein component A includes at least one element selected from a Group 1 element, a Group 2 element, and a metal of Groups 3 to 12, component R is a rare-earth element, component G includes at least one element selected from sulfur (S), selenium (Se), tellurium (Te), phosphorus (P), arsenic (As), antimony (Sb), bismuth (Bi), carbon (C), silicon (Si), germanium (Ge), tin (Sn), boron (B), aluminum (Al), gallium (Ga), and indium (In), 0<a?1, 0<b?1, and 0?n<1.

Abstract: The present invention relates to a thermoelectric device using a bulk material of a nano type, a thermoelectric module having the thermoelectric device and a method of manufacturing thereof. According to the present invention, thin film of a nano thickness is formed on a bulk material formed as several nano types to be re-connected for prohibiting the phonon course.

Abstract: A thermoelectric material including a composition of Formula 1: (Bi1-x-zSbxAz)u(Te1-ySey)w,??Formula 1 wherein A is a transition metal, 0?x<1, 0?y?1, 0<z?0.03, 1.8?u?2.2, and 2.8?w?3.2.

Abstract: An electrically conductive composite material that includes an electrically conductive polymer, and at least one metal nanoparticle coated with a protective agent, wherein said protective agent includes a compound having a first part that has at least part of the molecular backbone of said electrically conductive polymer and a second part that interacts with said at least one metal nanoparticle.

Abstract: Embodiments of a thin-film heterostructure thermoelectric material and methods of fabrication thereof are disclosed. In general, the thermoelectric material is formed in a Group IIa and IV-VI materials system. The thermoelectric material includes an epitaxial heterostructure and exhibits high heat pumping and figure-of-merit performance in terms of Seebeck coefficient, electrical conductivity, and thermal conductivity over broad temperature ranges through appropriate engineering and judicious optimization of the epitaxial heterostructure.

Abstract: Provided is a p-type thermoelectric conversion material achieving a low environment load and low costs and having high efficiency. A thermoelectric conversion device is constituted by raw materials existing in a great amount in nature by using Fe and S as main components. Further, since FeS2 of a pyrite structure has a d orbit derived from Fe in a valence band and a high state density, high performance as the thermoelectric conversion device is implemented by adding an addition element to this material system to express a p-type semiconductor characteristic.

Abstract: A thermoelectric conversion material in which the electron spatial distribution assumes a wire structure or a quasi-one-dimensional structure is fabricated. A mode of the present invention provides a thermoelectric conversion structure 100 of a single crystal 10 of SrTiO3 having a (210) plane surface or interface, and having, in the surface or interface, a concave-convex structure including terrace portions 12, 14 in (100) planes and step portions 16 extending along the surface in-plane [001] axis.

Abstract: A thermoelectric device based on a multilayer structure having alternate layers of metal/material mixture. The alternate layers have differing metal content. The layer structure is irradiated with ionizing radiation to produce nanoclusters in the layers. The differing metal content serves to quench the nanoclusters to isolate nanoclusters along the radiation track. The result is a thermoelectric device with a high figure of merit. In one embodiment, the multilayer structure is fabricated and then irradiated with high energy radiation penetrating the entire layer structure. In another embodiment, layers are irradiated sequentially during fabrication using low energy radiation.

Abstract: A thermoelectric conversion material in a wire structure or quasi-one-dimensional structure is fabricated simply and with good reproducibility. In one mode of the present invention, a thermoelectric conversion structure 100 is provided, having a SrTiO3 substrate 10 having a (210) plane substrate surface and having a concave-convex structure including (100) plane terrace portions 12, 14 and step portions 16 extending along the in-plane [001] axis of the substrate surface, and a thermoelectric conversion material 22 formed on the surface of at least a portion of the concave-convex structure.

Abstract: Embodiments of a thermoelectric material having high cross-plane electrical conductivity in the presence of one or more Seebeck coefficient enhancing potential barriers and methods of fabrication thereof are disclosed. In one embodiment, a thermoelectric material includes a first matrix material layer, a barrier layer, and a second matrix material layer. The barrier layer is a short-period superlattice structure that includes multiple superlattice layers. Each superlattice layer has a high energy sub-band and a low energy sub-band. For each superlattice layer, the energy level of the high energy sub-band of the superlattice layer is resonant with the energy level of the low energy level sub-band of an adjacent superlattice layer and/or the energy level of the low energy sub-band of the superlattice layer is resonant with the energy level of the high energy sub-band of an adjacent superlattice layer. As a result, cross-plane electrical conductivity of the thermoelectric material is improved.

Abstract: A process for forming thermoelectric nanoparticles includes the steps of providing a core material and a bismuth containing compound in a reverse micelle; providing a tellurium containing compound either in or not in a reverse micelle; reacting the bismuth containing compound with the tellurium containing compound in the presence of a base, forming a composite thermoelectric nanoparticle having a core and shell structure.

Abstract: Disclosed is a new thermoelectric conversion material represented by the chemical formula 1: Bi1-xCu1-yO1-zTe, where 0?x<1, 0?y<1, 0?z<1 and x+y+z>0. A thermoelectric conversion device using said thermoelectric conversion material has good energy conversion efficiency.

Abstract: Embodiments of the invention are directed to doped pnictogen chalcogenide nanoplates, where each nanoplate comprises a rhombohedral crystal of Bi2Te3, Bi2Se3, or Sb2Te3 that is sulfur doped. Another embodiment of the invention is directed to a microwave activated method of preparation of the doped pnictogen chalcogenide nanoplates. Other embodiments of the invention are directed to bulk assemblies or fused films of the doped pnictogen chalcogenide nanoplates and their preparation from the doped pnictogen chalcogenide nanoplates such that the bulk assembly or fused film can be employed in a thermoelectric device.