Abstract: T provide an N type thermoelectric material having figure of the merit improved to be comparable to or higher than that of P type thermoelectric material, the N type thermoelectric material of the present invention contains at least one kind of Bi and Sb and at least one kind of Te and Se as main components, and contains bromine (Br) and iodine (I) to have carrier in such a concentration that corresponds to the contents of bromine (Br) and iodine (I).

Abstract: A dichalcogenide thermoelectric material having a very low thermal conductivity in comparison with a conventional metal or semiconductor is described. The dichalcogenide thermoelectric material has a structure of Formula 1 below: RX2-aYa??Formula 1 wherein R is a rare earth or transition metal magnetic element, X and Y are each independently an element selected from the group consisting of S, Se, Te, P, As, Sb, Bi, C, Si, Ge, Sn, B, Al, Ga, In, and a combination thereof, and 0?a<2.

Abstract: A thermoelectric material and a thermoelectric converter using this material. The thermoelectric material has a first component including a semiconductor material and a second component including a rare earth material included in the first component to thereby increase a figure of merit of a composite of the semiconductor material and the rare earth material relative to a figure of merit of the semiconductor material. The thermoelectric converter has a p-type thermoelectric material and a n-type thermoelectric material. At least one of the p-type thermoelectric material and the n-type thermoelectric material includes a rare earth material in at least one of the p-type thermoelectric material or the n-type thermoelectric material.

Abstract: A thermoelectric structure including a thermoelectric material having a thickness less than 50 nm and a semi-insulating material in electrical contact with the thermoelectric material. The thermoelectric material and the semi-insulating materials have an equilibrium Fermi level, across a junction between the thermoelectric material and the semi-insulating material, which exists in a conduction band or a valence band of the thermoelectric material. The thermoelectric structure is for thermoelectric cooling and thermoelectric power generation.

Abstract: A thermoelectric composition comprises a material represented by the general formula (AgaX1?a)1±x(SnbPb1?b)mM?1?yQ2+m wherein X is Na, K, or a combination of Na and K in any proportion; M? is a trivalent element selected from the group consisting of Sb, Bi, lanthanide elements, and combinations thereof; Q is a chalcogenide element selected from the group consisting of S, Te, Se, and combinations thereof; a and b are independently >0 and ?1; x and y are independently >0 and <1; and 2?m?30. The compositions exhibit a figure of merit ZT of up to about 1.4 or higher, and are useful as p-type semiconductors in thermoelectric devices.

Abstract: A heterogeneous laminate including: graphene; and a thermoelectric inorganic compound disposed on the graphene.

Abstract: Provided is a thermoelectric device including two legs having a rough side surface and a smooth side surface facing each other. Phonons may be scattered by the rough side surface, thereby decreasing thermal conductivity of the device. Flowing paths for electrons and phonons may become different form each other, because of a magnetic field induced by an electric current passing through the legs. The smooth side surface may be used for the flowing path of electrons. As a result, in the thermoelectric device, thermal conductivity can be reduced and electric conductivity can be maintained.

Abstract: A method for manufacturing a thermoelectric component is provided. The method comprises the following steps: producing a plurality of first layers of a first thermoelectric material, and producing a plurality of second layers of a second thermoelectric material, such that the first layers are arranged in alternation with the second layers. Producing the first and/or the second thermoelectric layers each comprises producing at least one first initial layer and at least one second initial layer.

Abstract: The thermoelectric structure is formed by a network of wires oriented substantially in a weft direction of the structure. It comprises first and second conducting wires of different kinds, interwoven to form cold and hot junctions distributed respectively in a top plane and a bottom plane. The junctions are alternately cold and hot along any one conducting wire. The thermoelectric structure comprises at least one high dielectric wire in the top plane, and at least one low dielectric wire in the bottom plane. The dielectric wires are interwoven with the first and second conducting wires so as to keep the top and bottom planes at a distance from one another.

Abstract: A thermoelectric module which has at least one thermoelectric element for converting energy between thermal energy and electrical energy. The at least one thermoelectric element has a first surface and a second surface opposite the first surface. The thermoelectric module further has a first electrode, the first electrode having at least a first region which is arranged directly on the first surface and a second electrode, the second electrode having at least a second region which is arranged directly on the second surface. At least one of the first region and the second region has a metal alloy which exhibits an Invar effect.

Abstract: A thermoelectric material including a thermoelectric semiconductor; and a nanosheet disposed in the thermoelectric semiconductor, the nanosheet having a layered structure and a thickness from about 0.1 to about 10 nanometers. Also a thermoelectric element and thermoelectric module including the thermoelectric material.

Abstract: A method for forming a thermoelectric element for use in a thermoelectric device comprises forming a mask adjacent to a substrate. The mask can include three-dimensional structures phase-separated in a polymer matrix. The three-dimensional structures can be removed to provide a plurality of holes in the polymer matrix. The plurality of holes can expose portions of the substrate. A layer of a metallic material can be deposited adjacent to the mask and exposed portions of the substrate. The mask can then be removed. The metallic material is then exposed to an oxidizing agent and an etchant to form holes or wires in the substrate.

Abstract: A thermoelectric material is disclosed. The thermoelectric material is represented by the following formula; (A1-aA?a)4-x(B1-bB?b)3-y. A is a Group XIII element and A? may be a Group XIII element, a Group XIV element, a rare earth element, a transition metal, or combinations thereof. A and A? are different from each other. B may be S, Se, Te and B? may be a Groups XIV, XV, XVI or combinations thereof. B and B? are different from each other. a is equal to or larger than 0 and less than 1. b is equal to or larger than 0 and less than 1. x is between ?1 and 1 and wherein y is between ?1 and 1.

Abstract: A solar cell including a quantum dot and an electron conductor, and a bifunctional ligand disposed between the quantum dot and the electron conductor. The bifunctional ligand molecule may include an electron conductor anchor that bonds to the electron conductor and a first quantum dot anchor that bonds to the quantum dot. A hole conductor such as a conductive polymer may include a second quantum dot anchor.

Abstract: Disclosed is an article having: a porous thermally insulating material, an electrically conductive coating on the thermally insulating material, and a thermoelectric coating on the electrically conductive coating. Also disclosed is a method of forming an article by: providing a porous thermally insulating material, coating an electrically conductive coating on the thermally insulating material, and coating a thermoelectric coating on the electrically conductive coating. The articles may be useful in thermoelectric devices.

Abstract: Thermoelectric eutectic and off-eutectic compositions comprising a minor phase in a thermoelectric matrix phase are provided. These compositions include eutectic and near eutectic compositions where the matrix phase is a chalcogenide (S, Se, Te) of Ge, Sn, or Pb or an appropriate alloy of these compounds and at least one of Ge, Ge1?xSix, Si, ZnTe, and Co are precipitated as the minor phase within the matrix. Methods of making and using the compositions are also provided. The thermoelectric and mechanical properties of the compositions make them well-suited for use in thermoelectric applications. Controlled doping of eutectic compositions and hypereutectic compositions can yield large power factors. By optimizing both the thermal conductivities and power factors of the present compositions, ZT values greater than 1 can be obtained at 700K.

Abstract: Embodiments of a thin-film heterostructure thermoelectric material and methods of fabrication thereof are disclosed. In general, the thermoelectric material is formed in a Group IIa and IV-VI materials system. The thermoelectric material includes an epitaxial heterostructure and exhibits high heat pumping and figure-of-merit performance in terms of Seebeck coefficient, electrical conductivity, and thermal conductivity over broad temperature ranges through appropriate engineering and judicious optimization of the epitaxial heterostructure.

Abstract: Disclosed is a new thermoelectric conversion material represented by the chemical formula 1: Bi1-xCu1-yO1-zTe, where 0?x<1, 0?y<1, 0?z<1 and x+y+z>0. A thermoelectric conversion device using said thermoelectric conversion material has good energy conversion efficiency.

Abstract: A thermoelectric device, a method for fabricating a thermoelectric device and electrode materials applied to the thermoelectric device are provided according to the present invention. The present invention is characterized in arranging thermoelectric material power, interlayer materials and electrode materials in advance according to the structure of thermoelectric device; adopting one-step sintering method to make a process of forming bulked thermoelectric materials and a process of combining with electrodes on the devices to be completed simultaneously; and obtaining a ? shape thermoelectric device finally. Electrode materials related to the present invention comprise binary or ternary alloys or composite materials, which comprise at least a first metal selected from Cu, Ag, Al or Au, and a second metal selected from Mo, W, Zr, Ta, Cr, Nb, V or Ti.

Abstract: The disclosure relates to Seebeck/Peltier effect thermoelectric conversion devices and in particular devices made of stack of dielectric layers alternated to treated semiconducting layers even of large size, not requiring lithographic patterning in a nano-micrometric scale.

Abstract: A thermoelectric conversion material contains a mixed oxide containing Zn, Ga, and In. The thermoelectric conversion material is one in which the mixed oxide further contains Al. The thermoelectric conversion material is one in which the relative density of the mixed oxide is not less than 80%. The thermoelectric conversion material is one in which at least a part of a surface of the mixed oxide is coated with a film. A thermoelectric conversion module is provided with a plurality of n-type thermoelectric conversion materials, a plurality of p-type thermoelectric conversion materials, and a plurality of electrodes electrically serially connecting the p-type thermoelectric conversion materials with the n-type thermoelectric conversion materials in an alternate arrangement, and at least one material of the plurality of n-type thermoelectric conversion materials is the aforementioned thermoelectric conversion material.

Abstract: A thermoelectric generator assembly includes a thermoelectric generator with hot and cold junction flanges. The hot junction flange includes an adapter shaped for thermally coupling to a process vessel. The thermoelectric generator producing a thermoelectric power output. A heat sink thermally couples to ambient air and has a heat sink flange. A heat pipe assembly includes fluid in a circulation chamber. The circulation chamber has an evaporator flange mounted to the cold junction flange and a condenser flange mounted to the heat sink flange. At least a portion of the fluid transports heat from the evaporator flange to the condenser flange. When a heat pipe assembly on a cold junction flange is used with many of the types of heat flows that are available in process industries, more efficient thermoelectric power generation can be provided in the process industries.

Abstract: Disclosed is a new thermoelectric conversion material represented by the chemical formula 1: Bi1-xCu1-yO1-zTe, where 0?x<1, 0?y<1, 0?z<1 and x+y+z>0. A thermoelectric conversion device using said thermoelectric conversion material has good energy conversion efficiency.

Abstract: A segmented lead telluride egg-crate thermoelectric module. In preferred embodiments N legs and P legs are segmented into at least two segments. The segments are chosen for their figure of merit in the various temperature ranges between the hot side and the cold side of the module. In preferred embodiments a low-temperature egg-crate, molded from a liquid crystal polymer material, having very low thermal conductivity holds in place and provides insulation and electrical connections for the thermoelectric N legs and P legs at the cold side of the module. A castable ceramic capable of operation at temperatures in excess of 500° C. is used to provide electrical insulation between the legs at the hot side of the module.

Abstract: n-type and p-type thermoelectric materials having high figures of merit are herein disclosed. The n-type and p-type thermoelectric materials are used to generate and harvest energy in thermoelectric power generator and storage modules comprising at least one n-type thermoelectric element coupled to at least one p-type thermoelectric element.

Abstract: The present invention is directed to an electrical device that comprises a first and a second fiber having a core of thermoelectric material embedded in an electrically insulating material, and a conductor. The first fiber is doped with a first type of impurity, while the second fiber is doped with a second type of impurity. A conductor is coupled to the first fiber to induce current flow between the first and second fibers.

Abstract: A thermoelectric material having a high ZT value is provided. In general, the thermoelectric material is a thin film thermoelectric material that includes a heterostructure formed of IV-VI semiconductor materials, where the heterostructure includes at least one potential barrier layer. In one embodiment, the heterostructure is formed of IV-VI semiconductor materials and includes a first matrix material layer, a potential barrier material layer adjacent to the first matrix material layer and formed of a wide bandgap material, and a second matrix material layer that is adjacent the potential barrier material layer opposite the first matrix material layer. A thickness of the potential barrier layer is approximately equal to a mean free path distance for charge carriers at a desired temperature.

Abstract: A thermoelectric transducer is provided, where a decrease in conversion efficiency due to uneven characteristics of semiconductors is resolved and a decrease in adhesion strength between each element unit and an electrode due to a heat expansion coefficient between the respective thermoelectric transducers. In addition, an improvement of electro thermal conversion efficiency is intended by modifying the structure of the single device. Single element unit (13), which are made off semiconductor of the same type constructed of sintered body cells each containing oxide of a metal element, an oxide of a rare-earth element, and manganese are arranged on a board (5, 12) of a thermoelectric transducer (10). Film-shaped thin-film electrodes are arranged on cooling and heating surfaces so to be integral with the sintered body cell. On these sides, lead wires (16) are connected to each other in series.

Abstract: The present invention provides a multi-layered thermoelectric device and a method of manufacturing the same. The method for manufacturing a multi-layered thermoelectric device includes the steps of: forming a P-type semiconductor and an N-type semiconductor in a sheet type by mixing thermoelectric semiconductor materials at a preset component ratio; cutting the sheets according to a preset specification of the thermoelectric device; stacking sheets which are made by mixing the thermoelectric semiconductor materials at a preset component ratio and are cut into the same size for each of them; and forming a final thermoelectric device by compressing the stacked sheets. By using the method, scattering phenomenon due to a short wavelength of phonon occurs at a boundary of each layer, which results in active scattering of phonon. Therefore, it is possible to expect an effect of improving a thermoelectric figure of merit of a thermoelectric device.

Abstract: The present invention provides a thermoelectric conversion material composed of an oxide material represented by chemical formula A0.8-1.2Ta2O6-y, where A is calcium (Ca) alone or calcium (Ca) and at least one selected from magnesium (Mg), strontium (Sr), and barium (Ba), and y is larger than 0 but does not exceed 0.5 (0<y?0.5).

Abstract: T provide an N type thermoelectric material having figure of the merit improved to be comparable to or higher than that of P type thermoelectric material, the N type thermoelectric material of the present invention contains at least one kind of Bi and Sb and at least one kind of Te and Se as main components, and contains bromine (Br) and iodine (I) to have carrier in such a concentration that corresponds to the contents of bromine (Br) and iodine (I).

Abstract: A thermoelectric material including: a nanostructure; a discontinuous area disposed in the nanostructure, and an uneven portion disposed on the nano structure.

Abstract: A thermoelectric device includes a nanocomposite material with nanowires of at least one thermoelectric material having a predetermined figure of merit, the nanowires being formed in a porous substrate having a low thermal conductivity and having an average pore diameter ranging from about 4 nm to about 300 nm.

Abstract: A thermoelectric material comprises core-shell particles having a core formed from a core material and a shell formed from a shell material. In representative examples, the shell material is a material showing an appreciable thermoelectric effect in bulk. The core material preferably has a lower thermal conductivity than the shell material. In representative examples, the core material is an inorganic oxide such as silica or alumina, and the shell material is a chalcogenide semiconductor such as a telluride, for example bismuth telluride. A thermoelectric material including such core-shell particles may have an improved thermoelectric figure of merit compared with a bulk sample of the shell material alone. Embodiments of the invention further include thermoelectric devices using such thermoelectric materials, and preparation techniques.

Abstract: The invention is directed to a thermoelectric module that utilizes a glass-ceramic material in place of the alumina and aluminum nitride that are commonly used in such modules. The glass-ceramic has a coefficient of thermal expansion of <10×10?7/° C. The p- and n-type thermoelectric materials can be any type of such materials that can withstand an operating environment of up to 1000° C., and they should have a CTE comparable to that of the glass-ceramic. The module of the invention is used to convert the energy wasted in the exhaust heat of hydrocarbon fueled engines to electrical power.

Abstract: A thermoelectric material including: a bismuth-tellurium (Bi—Te)-based thermoelectric material matrix; and a nano-metal component distributed in the Bi—Te-based thermoelectric material matrix, wherein a Lotgering degree of orientation in a c-axis direction is about 0.9 to about 1.

Abstract: T provide an N type thermoelectric material having figure of the merit improved to be comparable to or higher than that of P type thermoelectric material, the N type thermoelectric material of the present invention contains at least one kind of Bi and Sb and at least one kind of Te and Se as main components, and contains bromine (Br) and iodine (I) to have carrier in such a concentration that corresponds to the contents of bromine (Br) and iodine (I).

Abstract: A thermoelectric material including a compound represented by Formula 1 below: (R1-aR?a)(T1-bT?b)3±y??Formula 1 wherein R and R? are different from each other, and each includes at least one element selected from a rare-earth element and a transition metal, T and T? are different from each other, and each includes at least one element selected from sulfur (S), selenium (Se), tellurium (Te), phosphorus (P), arsenic (As), antimony (Sb), bismuth (Bi), carbon (C), silicon (Si), germanium (Ge), tin (Sn), boron (B), aluminum (Al), gallium (Ga), and indium (In), 0?a?1, 0?b?1, and 0?y<1.

Abstract: A thermoelectric structure for cooling an integrated circuit (IC) chip comprises a first type superlattice layer formed on top of the IC chip connected to a first voltage, and a second type superlattice layer formed on the bottom of the IC chip connected to a second voltage, the second voltage being different from the first voltage, wherein an power supply current flows through the first and second type superlattice layer for cooling the IC chip.

Abstract: A thermoelectric conversion module that generates electric power by applying a temperature difference to a pn junction between a p-type oxide thermoelectric conversion material and an n-type oxide thermoelectric conversion material, at least one surface of a pair of surfaces to which a temperature difference is to be applied is covered with an insulating film. Surfaces other than the surfaces to which the temperature difference is to be applied are also covered with an insulating film. The p-type oxide thermoelectric conversion material, the n-type oxide thermoelectric conversion material, an insulating material arranged therebetween, and the insulating film that covers a predetermined region of the surface are co-sintered.

Abstract: The thermoelectric device of the present invention includes a first electrode and a second electrode that are disposed to be opposed to each other, and a laminate that is interposed between the first electrode and the second electrode, is connected electrically to both the first electrode and the second electrode, and is layered in the direction orthogonal to an electromotive-force extracting direction, which is the direction in which the first electrode and the second electrode are opposed to each other.

Abstract: A metal mixture is prepared, in which an excess amount of Te is added to a (Bi—Sb)2Te3 based composition. After melting the metal mixture, the molten metal is solidified on a surface of a cooling roll of which the circumferential velocity is no higher than 5 m/sec, so as to have a thickness of no less than 30 ?m. Thus, a plate shaped raw thermoelectric semiconductor materials 10 are manufactured, in which Te rich phases are microscopically dispersed in complex compound semiconductor phases, and extending directions of C face of most of crystal grains are uniformly oriented. The raw thermoelectric semiconductor materials 10 are layered in the direction of the plate thickness. And the layered body is solidified and formed to form a compact 12. After that, the compact 12 is plastically deformed in such a manner that a shear force is applied in a uniaxial direction that is approximately parallel to the main layering direction of the raw thermoelectric semiconductor materials 10.

Abstract: The invention relates to a thermoelectrically active p- or n-conductive semiconductor material constituted by a compound of the general formula (I) (PbTe)1?x(Sn2±ySb2±zTe5)x??(I) with 0.0001?x?0.5, 0?y<2 and 0?z<2, wherein 0 to 10% by weight of the compound may be replaced by other metals or metal compounds, wherein the semiconductor material has a Seebeck coefficient of at least |S|?60 ?V/K at a temperature of 25° C. and electrical conductivity of at least 150 S/cm and power factor of at least 5 ?W/(cm·K2), further relates to a process for the preparation of such semiconductor materials, as well as to generators and Peltier arrangements containing them.

Abstract: A process for the fabrication of high efficiency thermoelectric materials using non-equilibrium synthesis routes is described. In one embodiment a molten alloy comprising a predetermined ratio of elements which will constitute the thermoelectric material is quenched at a cooling rate in excess of, for example, 105 or 106 K/s using a process such as melt spinning. The rapidly solidified particles are then placed into a mold having the desired size and shape. The particles in the mold are simultaneously compressed and sintered at elevated temperatures for a short duration using, for example, hot pressing or spark plasma sintering. The overall process provides improved microstructural control and greatly expands the accessible phase space, permitting the formation of dense, single-phase structures with nanosized grain boundaries and minimal or no impurity segregation.

Abstract: A thermoelectric element formed of a sintered body of a semiconductor comprising at least two kinds of elements selected from the group consisting of Bi, Te, Se and Sb, and having a micro-Vickers' hardness of not smaller than 0.5 GPa. The thermoelectric element has a hardness of not smaller than 0.5 GPa, and exhibits a large resistance against deformation, and is not easily broken by deformation. As a result, breakage due to deformation is prevented and a highly reliable thermoelectric element is realized even when a shape factor which is a ratio of the sectional area of the thermoelectric element to the height thereof, is increased and even when the element density is increased.

Abstract: A thermoelectric nano-composite including a thermoelectric matrix; a nano-metal particle; and a nano-thermoelectric material represented by Formula 1: AxMyBz??Formula 1 wherein A includes at least one element of indium, bismuth, or antimony, B includes at least one element of tellurium or selenium (Se), M includes at least one element of gallium, thallium, lead, rubidium, sodium, or lithium, x is greater than 0 and less than or equal to about 4, y is greater than 0 and less than or equal to about 4, and z is greater than 0 and less than or equal to about 3.

Abstract: A thin film ceramic thermocouple (10) having two ceramic thermocouple (12, 14) that are in contact with each other in at least on point to form a junction, and wherein each element was prepared in a different oxygen/nitrogen/argon plasma. Since each element is prepared under different plasma conditions, they have different electrical conductivity and different charge carrier concentration. The thin film thermocouple (10) can be transparent. A versatile ceramic sensor system having an RTD heat flux sensor can be combined with a thermocouple and a strain sensor to yield a multifunctional ceramic sensor array. The transparent ceramic temperature sensor that could ultimately be used for calibration of optical sensors.

Abstract: An improved method and apparatus for thermal-to-electric conversion involving relatively hot and cold juxtaposed surfaces separated by a small vacuum gap wherein the cold surface provides an array of single charge carrier converter elements along the surface and the hot surface transfers excitation energy to the opposing cold surface across the gap through Coulomb electrostatic coupling interaction.

Abstract: The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device. The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a superstrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device where the interface layer comprises nanoparticles or nanoparticles that are sintered.

Abstract: The invention disclosed herein relates to thermoelectrically-active p-type Zintl phase materials as well as devices utilizing such compounds. Such thermoelectric materials and devices may be used to convert thermal energy into electrical energy, or use electrical energy to produce heat or refrigeration. Embodiments of the invention relate to p-type thermoelectric materials related to the compound Yb14MnSb11.