Abstract: A thermoelectric device is provided which is good in terms of responsibility to heat, by which a relatively large electric power can be produced, which is good in terms of durability, and which can be manufactured at reduced cost. The thermoelectric device includes a substrate having a thickness of 2.0 mm or less, and a thick-film type thermoelectric material formed on the substrate, and having a thickness of from 0.01 mm to 1.0 mm. The thick-film type thermoelectric material is covered with a glassy coating. By the coating, the thick-film type thermoelectric material is inhibited from coming off, and from deteriorating oxidatively.

Abstract: Disclosed are positive electrodes containing active-sulfur-based composite electrodes. The cells include active-sulfur, an electronic conductor, and an ionic conductor. These materials are provided in a manner allowing at least about 10% of the active-sulfur to be available for electrochemical reaction. Also disclosed are methods for fabricating active-sulfur-based composite electrodes. The method begins with a step of combining the electrode components in a slurry. Next, the slurry is homogenized such that the electrode components are well mixed and free of agglomerates. Thereafter, before the electrode components have settled or separated to any significant degree, the slurry is coated on a substrate to form a thin film. Finally, the coated film is dried to form the electrode in such a manner that the electrode components do not significantly redistribute.

Abstract: Disclosed are positive electrodes containing active-sulfur-based composite electrodes. The cells include active-sulfur, an electronic conductor, and an ionic conductor. These materials are provided in a manner allowing at least about 10% of the active-sulfur to be available for electrochemical reaction. Also disclosed are methods for fabricating active-sulfur-based composite electrodes. The method begins with a step of combining the electrode components in a slurry. Next, the slurry is homogenized such that the electrode components are well mixed and free of agglomerates. Thereafter, before the electrode components have settled or separated to any significant degree, the slurry is coated on a substrate to form a thin film. Finally, the coated film is dried to form the electrode in such a manner that the electrode components do not significantly redistribute.

Abstract: An apparatus and method for producing electricity from heat. The present invention is a thermoelectric generator that uses materials with substantially no electrical resistance, often called superconductors, to efficiently convert heat into electrical energy without resistive losses. Preferably, an array of superconducting elements is encased within a second material with a high thermal conductivity. The second material is preferably a semiconductor. Alternatively, the superconducting material can be doped on a base semiconducting material, or the superconducting material and the semiconducting material can exist as alternating, interleaved layers of waferlike materials. A temperature gradient imposed across the boundary of the two materials establishes an electrical potential related to the magnitude of the temperature gradient. The superconducting material carries the resulting electrical current at zero resistivity, thereby eliminating resistive losses.

Abstract: Thermoelectric material contains one or more than one element selected from the transition metals and the rare earth metals, and the element promotes the amorphous phase in the thermoelectric material so as to increase the figure of merit.

Abstract: A ferroelectric thin film includes lead titanate including La and at least an element which forms a six-coordinate bond with oxygen atoms and which is selected from the group consisting of Mg and Mn. The ferroelectric thin film is imparted with a high c-axis orientation while the film is formed without a polarization process. The ferroelectric thin film is manufactured by the steps of: positioning a MgO single crystal substrate disposed in advance with a foundation platinum electrode by a sputtering method on the surface of a substrate heater, exhausting a chamber, heating the substrate by a substrate heater, letting in sputtering gases Ar and O.sub.2 through a nozzle into the chamber, and maintaining a high degree of vacuum. Then, high frequency electric power is input to a target from a high frequency electric power source to generate plasma, and a film is formed on the substrate. In this way, a ferroelectric thin film containing, for example, ?(1-x).multidot.Pb.sub.1-y La.sub.y Ti.sub.1-y/4 O.sub.3 +x.

Abstract: A cooling device for lowering the temperature of a heat-dissipating device. The cooling device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with the heat-dissipating device. During operation, heat flows from the heat-dissipating device into the heat-conducting substrate, where it is spread out over a relatively large area. A thermoelectric cooling material (e.g., a Bi.sub.2 Te.sub.3 -based film or other thermoelectric material) is placed in thermal contact with the heat-conducting substrate. Application of electrical power to the thermoelectric material drives the thermoelectric material to pump heat into a second heat-conducting substrate which, in turn, is attached to a heat sink.

Abstract: A thermoelectric semiconductor material is used for thermoelectric conversion in a thermoelectric conversion device. The material comprises a double oxide having one of a normal spinel crystal structure and an inverse spinel crystal structure, the double oxide comprising a composition that is represented by MIn.sub.2 O.sub.4, wherein M represents a metal element that can be changed into a divalent ion.

Abstract: A highly integrated thermal sensor (10) is responsive to radiation having wavelengths within a predetermined band of wavelengths. The sensor, which may be a thermopile, is comprised of a substrate (16) comprised of at least one semiconductor material. The substrate includes at least one active region disposed within a first surface of the substrate. The sensor further includes a plurality of thermally-responsive junctions (HJ, CJ) between dissimilar materials (22, 24) that are disposed within the at least one active region, wherein at least one of the thermally-responsive junctions is a hot junction. The hot junction is thermally isolated from the substrate by being suspended from the substrate on dielectric bridges or, in another embodiment, by a thermally insulating and patterned polymer. In a backside illuminated embodiment of this invention the sensor further includes an optical cavity (26) formed within a second surface of the substrate in registration with the active region.

Abstract: Transition metals (T) of Group VIII (Co, Rh and Ir) have been prepared as semiconductor alloys with Sb having the general formula TSb.sub.3. The skutterudite-type crystal lattice structure of these semiconductor alloys and their enhanced thermoelectric properties results in semiconductor materials which may be used in the fabrication of thermoelectric elements to substantially improve the efficiency of the resulting thermoelectric device. Semiconductor alloys having the desired skutterudite-type crystal lattice structure may be prepared in accordance with the present invention by using vertical gradient freeze techniques, liquid-solid phase sintering techniques, low temperature powder sintering and/or hot-pressing. Measurements of electrical and thermal transport properties of selected semiconductor materials prepared in accordance with the present invention, demonstrated high Hall mobilities (up to 8000 cm.sup.2.V.sup.-1.s.sup.-1), good Seebeck coefficients (up to 400 .mu.VK.sup.-1 between 300.degree. C.

Abstract: A technique for forming from staring precursors at the molecular level, a sultant thermoelectric material with a reduced thermal conductivity. All staring precursors are dissolved in solution, reduced to remove oxygen, and then combined into a single solution to yield specific stoichiometric ratios. A sol and then a gel is formed, which supercritical solvent extraction is performed upon so as to yield a material having two level porosity and a maximum of a factor of three reduction in thermal conductivity.

Abstract: Disclosed are battery cells comprising a sulfur-based positive composite electrode. Preferably, said cells are secondary cells, and more preferably thin film secondary cells. In one aspect, the cells can be in a solid-state or gel-state format wherein either a solid-state or gel-state electrolyte separator is used. In another aspect of the invention, the cells are in a liquid format wherein the negative electrode comprises carbon, carbon inserted with lithium or sodium, or a mixture of carbon with lithium or sodium. The novel battery systems of this invention have a preferred operating temperature range of from -40.degree. C. to 145.degree. C. with demonstrated energies and powers far in excess of state-of-the-art high-temperature battery systems.

Abstract: In a fine structure of a thermoelectric material, fine particles of a material exhibiting Seebeck effect are electrically linked in a loosely contacted state with one another without fusing, having spaces formed at clearances among the fine particles. A method of manufacturing the thermoelectric material comprises a step of compacting fine particles made of a material exhibiting Seebeck effect through a cold pressing. Also, disclosed is a sensor for quantitatively sensing a substance, which comprises a pellet of a powder thermoelectric material, where a temperature difference is generated between two points inside the piece of thermoelectric material. The sensor further includes thermocouples connected to a heater plate (6) and a cooling plate, and a controller which is electrically connected in the loop circuit of the thermocouples for detecting thermoelectric current corresponding to the temperature difference, thereby to control the heating of the heater plate.

Abstract: There are sintered Bi.sub.2 Te.sub.3 -based thermoelectric materials containing Ag.sub.2 S, which prevent p- to n-type transition of Bi.sub.2 Te.sub.3 -based thermoelectric materials during polycrystalline sintering and have improved thermoelectric properties.

Abstract: A P-type thermoelectric material consists essentially of iron disilicide, metallic manganese and metallic aluminium dissolved in or alloyed with the iron disilicide, and silicon oxide and/or aluminum oxide present in the iron disilicide. The manganese is contained in an amount of from 1.67 to 4.1 atomic % with respect to a sum of atoms of iron and silicon constituting the iron disilicide, the metallic manganese and the metallic aluminum taken as 100 atomic %, and the metallic aluminum contained in an amount of from 1.33 to 3.33 atomic % with respect thereto, and a sum of the metallic manganese and the metallic aluminum in an amount of from 4.0 to 5.34 atomic % with respect thereto. The P-type thermoelectric material having such a composition produces a thermoelectromotive force equal to or greater than those of the conventional P-type thermoelectric materials comprised of iron disilicide, and it exhibits a mean resistivity equal to or smaller than that of the N-type thermoelectric material.

Abstract: A thermoelement (leg) of a thermocouple for use in peltier heating or generation of power by the Seebeck effect including a plurality of interleaved films wherein compositions of neighboring films are selected to create Kapitza boundaries between the films such as to reduce thermal conductivity but provide adequate electrical conductivity. The plurality of interleaved films includes a semiductor with suitable doping to establish required extrinsic conductivity and metals having dissimilar lattices such as aluminum and tungsten abutting one another. The practical number of films in the composite to establish the effect is ten. A preferred thickness of the films is less than twenty thousand Angstroms.

Abstract: A superlattice comprising alternating layers of (PbTeSe).sub.m and (BiSb).sub.n (where m and n are the number of PbTeSe and BiSb monolayers per superlattice period, respectively) having engineered electronic structures for improved thermoelectric cooling materials (and other uses) may be grown by molecular beam epitaxial growth. Preferably, for short periods, n+m<50. However, superlattice films with 10,000 or more such small periods may be grown. For example, the superlattice may comprise alternating layers of (PbTe.sub.1-z Se.sub.z).sub.m and (Bi.sub.x Sb.sub.1-x).sub.n. According to a preferred embodiment, the superlattice comprises a plurality of layers comprising m layers of PbTe.sub.0.8 Se.sub.0.2 and n layers of Bi.sub.0.9 Sb.sub.0.1, where m and n are preferably between 2 and 20.

Abstract: An intermetallic film thermocouple has an amorphous phase and a Seebeck coefficient above 900 .mu.V/.degree. C. Such thermocouples can be prepared by vapor-depositing an intermetallic and quenching the resulting intermetallic film.

Abstract: The invention relates to thermocouples which are formed from a junction of ruthenium oxide (RuO.sub.2) and iridium oxide (IrO.sub.2). The resulting thermocouple produces a typical electrical output of about 4.5 .mu.V/k at 40.degree. C. to about 4.1 .mu.v/K at 200.degree. C. The thermocouples are extremely resistant to corrosion and thus may be used for direct contact with corrosive environments such as halide containing acids, cyanides, chlorates or peroxides. Because the thermocouples can directly contact the environment, they are 100 to 1000 times faster than commercially available sheathed sensors.

Abstract: A thermoelectric material can be obtained by co-pulverizing and mixing a material containing at least bismuth and a material containing at least tellurium, without being alloyed by melting, and then molding and sintering. This thermoelectric material has high performance and can be utilized in a variety of fields such as thermoelectric power generation and thermoelectric cooling, a temperature sensor, space development, marine development, and electric power generation in the remote areas. Since metal elements are used as a starting material, the starting material can be easily prepared. Moreover, in the production steps, the thermoelectric material can be produced in a high yield at a low energy consumption level by a simplified manner, without a complicated operation or special apparatus, and its production cost can be decreased.

Abstract: A Seebeck effect thermoelectric cooler, operative at cryogenic temperatures, in which two materials having different Seebeck coefficients are in electrical contact so that current flow thereacross cools the junction. One or both of the materials comprise a metal-insulator transition material characterized by doping, alloying, or other means to be just slightly metallic so that electrical resistance becomes lower at lower temperatures, but the Seebeck coefficient does not decline at lower temperatures, as would be the case if the material were allowed to become fully metal-like.

Abstract: The probe comprises a support in the form of a sheath, a series of internal pipes, retained by spacers and connecting orifices distributed along the sheath to a device for measuring and for receiving the gas samples outside the furnace, and thermocouples arranged at the level of the said orifices. In order to enable the pipes to be replaced without disassembly of the probe, the said orifices are situated in steps provided in the sheath, while the internal pipes, for taking gas samples and heat measurements are all individual, straight and exchangeable elements housed in straight support and protection channels, each traversing the sheath from the outside as far as the respective step.

Abstract: A thermoelectric material can be obtained by co-pulverizing and mixing a material containing at least bismuth and a material containing at least tellurium, without being alloyed by melting, and then molding and sintering. This thermoelectric material has high performance and can be utilized in a variety of fields such as thermoelectric power generation and thermoelectric cooling, a temperature sensor space development, marine development, and electric power generation in the remote areas. Since metal elements are used as a starting material, the starting material can be easily prepared. Moreover, in the production steps, the thermoelectric material can be produced in a high yield at a low energy consumption level by a simplified manner, without a complicated operation or special apparatus, and its production cost can be decreased.

Abstract: A novel multilayer photoconductive I.R. detector is formed by incorporating alternate p and n-type layers, such that many layers occupy the detector thickness. The detector may be considered as a n-type photoconductor containing buried isolated p-type regions which give rise to internal electric fields the effect of which is to enhance minority carrier lifetime and inhibit motion of minority carriers towards surfaces.

Abstract: Thermoelectric elements of both P-type and N-type lead tellurides having unique characteristics including, particularly in the case of the P-type, a figure-of-merit 90% above that of the best commercial P-type element, are produced by a new process involving as key steps chill casting, cold pressing and sintering to 85-90% theoretical density under protective atmosphere.

Abstract: Thermoelectric elements of both P-type and N-type lead tellurides having unique characteristics including, particularly in the case of the P-type, a figure-of-merit 90% above that of the best commercial P-type element, are produced by a new process, involving as key steps chill casting, cold pressing and sintering to 85-90% theoretical density under protective atmosphere.

Abstract: An invention is disclosed which provides improved thermoelectric devices and methods of making and using the same. The device exhibits enhanced efficiency and operating life through the use of a bonding material comprising at least 75% busmuth together with an adherent metallic layer interposed between the boundary structure and correspondary thermoelectric semiconductor element.

Abstract: A noise thermometer of the type in which a resistive sensing element is exposed to elevated temperatures and has a measuring circuit connected thereto so that the noise voltage output of the sensing element is detected. According to the invention this element is a rectangular parallelopiped, elongated or cubical, of lanthanum chromite, LaCrO.sub.3.

Abstract: Tungsten, molybdenum, and alloys thereof are useful as electrode members for thermoelectric legs made from chalcogenides of copper and/or silver.

Abstract: A thermoelectric module containing lead telluride as the thermoelectric mrial is encapsulated as tightly as possible in a stainless steel canister to provide minimum void volume in the canister. The lead telluride thermoelectric elements are pressure-contacted to a tungsten hot strap and metallurgically bonded at the cold junction to iron shoes with a barrier layer of tin telluride between the iron shoe and the p-type lead telluride element.

Abstract: Tungsten, molybdenum, and alloys thereof are useful as electrode members for thermoelectric legs made from chalcogenides of copper and/or silver.

Abstract: A method of manufacturing a film thermopile, whereby a film of a thermoelectric semiconductor material which is an n-type stoichiometric solid solution containing Bi.sub.2 Te.sub.3 and Sb.sub.2 Te.sub.3 is deposited on a substrate. Then heating is effected so that adjacent arms of the film are at different temperatures, some at a temperature of not above 300.degree. C, and others at a temperature of not less than 350.degree. C.

Abstract: N-type thermoelectric compositions based on rare-earth metal selected from gadolinium and erbium and chalcogen selected from selenium and tellurium.

Abstract: The contact members used with thermoelectric legs formed from self-segmenting thermoelectric compositions (compositions in which a constituent migrates under the influence of combined thermal and electrical gradients to create a gradation of doping levels that is beneficial for thermoelectric conversion) should be specially chosen to compensate for and best take advantage of the self-segmenting feature. In general, at least an exterior thickness of the contact member against the end of the leg toward which the migrating constituent moves should include the constituent at substantially its free-state chemical potential.

Abstract: A bonded electrical contact and method for a thermoelectric element. A thin layer of a ductile diffusion barrier, which is non-poisonous to thermoelectric materials, such as iron, tungsten, molybdenum, or niobium, is disposed between the thermoelectric material and a contacting shoe, such as stainless steel, which has poisonous alloy constituents. The thermal expansion coefficient of the diffusion barrier, which does not match that of the thermoelectric material, is overridden by that of the shoe, whose coefficient does correspond with that of such high expansion thermoelectrics as the telluriden.

Abstract: Improved alloys suitable for thermoelectric applications and having the general formula:(AgSbTe.sub.2).sub.1.sub.-x + (GeTe).sub.xwherein x has a value of about 0.80 and 0.85, have been found to possess unexpectedly high thermoelectric properties such as efficiency index, as well as other improved physical properties.