Group V Metal Containing (v, As, Nb, Sb, Ta, Bi) Patents (Class 136/240)
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Patent number: 7569763Abstract: A solid-state energy converter with a semiconductor or semiconductor-metal implementation is provided for conversion of thermal energy to electric energy, or electric energy to refrigeration. In n-type heat-to-electricity embodiments, a highly doped n* emitter region made of a metal or semiconductor injects carriers into an n-type gap region. A p-type layer is positioned between the emitter region and gap region, allowing for discontinuity of corresponding Fermi-levels and forming a potential barrier to sort electrons by energy. Additional p-type layers can optionally be formed on the collector side of the converter. One type of these layers with higher carrier concentration (p*) serves as a blocking layer at the cold side of the converter, and another layer (p**) with carrier concentration close to the gap reduces a thermoelectric back flow component. Ohmic contacts on both sides of the device close the electrical circuit through an external load to convert heat to electricity.Type: GrantFiled: September 13, 2006Date of Patent: August 4, 2009Assignee: Micropower Global LimitedInventors: Yan R. Kucherov, Peter L. Hagelstein
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Patent number: 7554029Abstract: The present invention provides a novel complex oxide capable of achieving high performance as a p-type thermoelectric material. The complex oxide comprises a layer-structured oxide represented by the formula BiaPbbM1cCOdM2eOf wherein M1 is one or more elements selected from the group consisting of Na, K, Li, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Pb, Ca, Sr, Ba, Al, Y, and lanthanoids; M2 is one or more elements selected from the group consisting of Ti, V, Cr, Mn, Fe, Ni, Cu, Mo, W, Nb, Ta, and Ag; 1.8?a?2.5; 0?b?0.5; 1.8?c?2.5; 1.6?d?2.5; 0?e?0.5; and 8?f?10; and at least one interlayer component selected from the group consisting of F, Cl, Br, I, HgF2, HgCl2, HgBr2, HgI2, TlF3, TlCl3, TlBr3, TlI3, BiF3, BiCl3, BiBr3, BiI3, PbF2, PbCl2, PbBr2, and PbI2. The interlayer component being present between layers of the layer-structured oxide.Type: GrantFiled: August 18, 2005Date of Patent: June 30, 2009Assignee: National Institute of Advanced Industrial Science and TechnologyInventors: Ryoji Funahashi, Emmanuel Guilmeau
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Publication number: 20090072078Abstract: A new High Altitude Airship (HAA) capable of various extended applications and mission scenarios utilizing inventive onboard energy harvesting and power distribution systems. The power technology comprises an advanced thermoelectric (ATE) thermal energy conversion system. The high efficiency of multiple stages of ATE materials in a tandem mode, each suited for best performance within a particular temperature range, permits the ATE system to generate a high quantity of harvested energy for the extended mission scenarios. When the figure of merit 5 is considered, the cascaded efficiency of the three-stage ATE system approaches an efficiency greater than 60 percent.Type: ApplicationFiled: July 31, 2007Publication date: March 19, 2009Applicants: Space AdministrationInventors: Sang H. Choi, James R. Elliott, JR., Glen C. King, Yeonjoon Park, Jae-Woo Kim, Sang-Hyon Chu
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Publication number: 20090025774Abstract: The invention relates to a thermoelectric means (60) that can be woven or knitted, taking the form of an elongate body and having on its surface at least one converter for converting thermal energy into electrical energy. The invention also relates to a structure for converting a temperature difference over the thickness of the structure into electricity, which consists of an assembly formed by the interlacement of textile fibers (8), of said thermoelectric means (60) and of connection means (7).Type: ApplicationFiled: July 22, 2008Publication date: January 29, 2009Inventors: Marc Plissonnier, Yannick Breton, Isabelle Chartier, Thierry Lanier, Christelle Navone
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Patent number: 7480984Abstract: A method of applying a physical barrier to suppress thermal decomposition near a surface of a thermoelectric material including applying a continuous metal foil to a predetermined portion of the surface of the thermoelectric material, physically binding the continuous metal foil to the surface of the thermoelectric material using a binding member, and heating in a predetermined atmosphere the applied and physically bound continuous metal foil and the thermoelectric material to a sufficient temperature in order to promote bonding between the continuous metal foil and the surface of the thermoelectric material. The continuous metal foil forms a physical barrier to enclose a predetermined portion of the surface. Thermal decomposition is suppressed at the surface of the thermoelectric material enclosed by the physical barrier when the thermoelectric element is in operation.Type: GrantFiled: June 7, 2004Date of Patent: January 27, 2009Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space AdministrationInventors: Jeffrey S. Sakamoto, Thierry Caillat, Jean-Pierre Fleurial, G. Jeffrey Snyder
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Publication number: 20090007953Abstract: An integrated micro-scale power converter converts hydrocarbon fuel into electricity. The integrated micro-scale power converter includes a micromachined combustor adapted to convert hydrocarbon fuel into thermal energy and a micromachined thermoelectric generator adapted to convert the thermal energy into electrical energy. The combustion reaction in the combustor flows in a path in a first plane while the thermal energy flows in a second plane in the generator the second plane being nearly orthogonal or orthogonal to the first plane. The fuel handler in the combustor is adjacent and thermally isolated from the thermoelectric generator. The fuel handler may include a nozzle and gas flow switch, where the frequency of activation of the gas flow switch controls the amount of the fuel ejected from the nozzle.Type: ApplicationFiled: July 7, 2006Publication date: January 8, 2009Inventor: Ying Wen Hsu
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Patent number: 7465871Abstract: The present invention is generally directed to nanocomposite thermoelectric materials that exhibit enhanced thermoelectric properties. The nanocomposite materials include two or more components, with at least one of the components forming nano-sized structures within the composite material. The components are chosen such that thermal conductivity of the composite is decreased without substantially diminishing the composite's electrical conductivity. Suitable component materials exhibit similar electronic band structures. For example, a band-edge gap between at least one of a conduction band or a valence band of one component material and a corresponding band of the other component material at interfaces between the components can be less than about 5kBT, wherein kB is the Boltzman constant and T is an average temperature of said nanocomposite composition.Type: GrantFiled: October 29, 2004Date of Patent: December 16, 2008Assignees: Massachusetts Institute of Technology, The Trustees of Boston CollegeInventors: Gang Chen, Zhifeng Ren, Mildred Dresselhaus
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Patent number: 7462217Abstract: The present invention relates to a process for the preparation of thermoelectric compositions of the formula InxCO4Sb12 (0<x<1), with a figure of merit greater than 1.0 and a composition made by that process.Type: GrantFiled: August 4, 2004Date of Patent: December 9, 2008Assignee: E.I. du Pont de Nemours and CompanyInventors: Tao He, James J. Krajewski, Munirpallam Appadorai Subramanian
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Patent number: 7435896Abstract: With conventional thermoelectric conversion materials, their thermoelectric conversion performance has been insufficient, and a problem has been to achieve stable performance in an oxidizing atmosphere and an air atmosphere. In view of this, according to the present invention, a thermoelectric material is made of a complex oxide that has vanadium oxide as its main component and is represented by the general formula AxVOx+1.5+d. Here, A is at least one selected from an alkali element, an alkaline-earth element, and a rare-earth element, x is a numerical value within the range of 0.2 to 2, and d is a non-stoichiometric ratio of oxygen and is a numerical value within the range of from ?1 to 1.Type: GrantFiled: December 3, 2004Date of Patent: October 14, 2008Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Hideaki Adachi, Yasunari Sugita, Satoshi Yotsuhashi, Tsutomu Kanno
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Publication number: 20080223427Abstract: A thermoelectric converter including plural thermoelectric conversion modules connected in series by having p-type semiconductors and n-type semiconductors alternately provided in through holes of a ceramic honeycomb, respectively. Ends of the p-type semiconductors are connected to ends of the n-type semiconductors on both sides of the through holes.Type: ApplicationFiled: November 30, 2007Publication date: September 18, 2008Applicant: IBIDEN CO., LTD.Inventor: Kazushige OHNO
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Publication number: 20080223426Abstract: A thermoelectric converter including p-type semiconductors and n-type semiconductors alternately provided in corresponding first and second through holes, respectively, in a ceramic honeycomb. The first and second through holes have different cross-sectional shapes and are alternately arranged. The semiconductors have respective first and second ends thereof successively connected to different ones of the semiconductors on first and second sides, respectively, of the corresponding through holes.Type: ApplicationFiled: November 21, 2007Publication date: September 18, 2008Applicant: IBIDEN CO., LTD.Inventor: Kazushige OHNO
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Publication number: 20080202575Abstract: Thermoelectric materials with high figures of merit, ZT values, are disclosed. In many instances, such materials include nano-sized domains (e.g., nanocrystalline), which are hypothesized to help increase the ZT value of the material (e.g., by increasing phonon scattering due to interfaces at grain boundaries or grain/inclusion boundaries). The ZT value of such materials can be greater than about 1, 1.2, 1.4, 1.5, 1.8, 2 and even higher. Such materials can be manufactured from a thermoelectric starting material by generating nanoparticles therefrom, or mechanically alloyed nanoparticles from elements which can be subsequently consolidated (e.g., via direct current induced hot press) into a new bulk material. Non-limiting examples of starting materials include bismuth, lead, and/or silicon-based materials, which can be alloyed, elemental, and/or doped. Various compositions and methods relating to aspects of nanostructured thermoelectric materials (e.g., modulation doping) are further disclosed.Type: ApplicationFiled: December 3, 2007Publication date: August 28, 2008Applicants: MASSACHUSETTS INSTITUTE OF TECHNOLOGY (MIT), The Trustees of Boston CollegeInventors: Zhifeng Ren, Bed Poudel, Gang Chen, Yucheng Lan, Dezhi Wang, Qing Hao, Mildred Dresselhaus, Yi Ma, Xiao Yan, Xiaoyuan Chen, Xiaowei Wang, Joshi R. Giri, Bo Yu
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Publication number: 20080178920Abstract: Certain embodiments disclosed herein are directed to devices for cooling. In certain examples, a thermoelectric device comprising a substrate and a superlattice coupled to the substrate is disclosed. In some examples, the superlattice includes a first semi-conducting material and a second semi-conducting material coupled to the first semi-conducting material to provide an interface between the first and second semi-conducting materials.Type: ApplicationFiled: November 30, 2007Publication date: July 31, 2008Applicant: SCHLUMBERGER TECHNOLOGY CORPORATIONInventor: John Ullo
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Publication number: 20080169016Abstract: The present invention is directed to an electrical device that comprises a first and a second fiber having a core of thermoelectric material embedded in an electrically insulating material, and a conductor. The first fiber is doped with a first type of impurity, while the second fiber is doped with a second type of impurity. A conductor is coupled to the first fiber to induce current flow between the first and second fibers.Type: ApplicationFiled: August 10, 2007Publication date: July 17, 2008Inventor: Biprodas DUTTA
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Publication number: 20080135082Abstract: A thermoelectric conversion module (10) comprises first and second electrode members (13, 14), and thermoelectric elements (11, 12) arranged between the electrode members (13, 14). The thermoelectric elements (11, 12) are made of a half-Heusler material and are electrically and mechanically connected to the first and second electrode members (13, 14) via bonding parts (17). The bonding parts (17) include a bonding material which contains at least one selected from Ag, Cu and Ni as a main component and at least one of active metal selected from Ti, Zr, Hf, Ta, V and Nb in a range from 1 to 10% by mass.Type: ApplicationFiled: December 12, 2005Publication date: June 12, 2008Inventors: Shinsuke Hirono, Takayuki Naba, Masami Okamura
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Patent number: 7321157Abstract: A method of fabricating a CoSb3-based thermoelectric device is disclosed. The method includes providing a high-temperature electrode, providing a buffer layer on the high-temperature electrode, forming composite n-type and p-type layers, attaching the buffer layer to the composite n-type and p-type layers, providing a low-temperature electrode on the composite n-type and p-type layers and separating the composite n-type and p-type layers from each other to define n-type and p-type legs between the high-temperature electrode and the low-temperature electrode.Type: GrantFiled: April 1, 2005Date of Patent: January 22, 2008Assignees: GM Global Technology Operations, Inc., Dalian Institute of Chemical Physics, Chinese Academy of SciencesInventors: Lidong Chen, Junfeng Fan, Shengqiang Bai, Jihui Yang
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Patent number: 7312392Abstract: The present invention provides a thermoelectric conversion device having high thermoelectric conversion performance. In this device, electrodes are arranged so that electric current flows in an interlayer direction of a layered substance, unlike the arrangements derived from common knowledge in the art. In the thermoelectric conversion device according to the present invention, a thermoelectric-conversion film is obtained through epitaxial growth and formed by arranging an electrically conducting layer and an electrically insulating layer alternately; the electrically conducting layer has an octahedral crystal structure in which a transition metal atom M is positioned at its center and oxygen atoms are positioned at its vertexes; and the electrically insulating layer includes a metal element or a crystalline metal oxide.Type: GrantFiled: August 2, 2005Date of Patent: December 25, 2007Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Satoshi Yotsuhashi, Tsutomu Kanno, Hideaki Adachi, Akihiro Odagawa, Yasunari Sugita
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Patent number: 7262360Abstract: Underwater power generation for an underwater vessel is provided when the vessel transits through an underwater thermocline. At least a portion of the shell of the vessel is made from a thermally conductive material. Thermo-to-electric energy converters are electrically coupled together with each converter having a first surface thermally coupled to the shell's inner surface. A phase change material is thermally coupled to each opposing second surface of the converters. The phase change material has a phase change temperature that is between the upper and lower temperature extremes of the underwater thermocline's temperature range. The converters generate electrical power as the underwater vessel transits through the underwater thermocline.Type: GrantFiled: August 18, 2003Date of Patent: August 28, 2007Assignee: United States of America as represented by the Secretary of the NavyInventor: Philip Davis
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Patent number: 7166796Abstract: In devices used for the direct conversion of heat into electricity, or vice versa, known in the art as thermoelectric power generators, thermoelectric refrigerators and thermoelectric heat pumps, the efficiency of energy conversion and/or coefficient of performance have been considerably lower than those of conventional reciprocating or rotary, heat engines and/or vapor-compression systems, employing certain refrigerants. The energy conversion efficiency of power generating devices, for example, aside from the hot and cold junction temperatures, also depends on a parameter known in the art as the thermoelectric figure of merit Z=S2?/k, where S is the thermoelectric power, ? is the electrical conductivity and k is the thermal conductivity, of the material that constitutes the p-type, and/or n-type, thermoelements, or branches, of the said devices. In order to achieve a considerable increase in the energy conversion efficiency, a thermoelectric figure of merit of the order of 10?2 K?1, or more, is needed.Type: GrantFiled: September 5, 2002Date of Patent: January 23, 2007Inventor: Michael C. Nicoloau
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Patent number: 7109408Abstract: A solid-state energy converter with a semiconductor or semiconductor-metal implementation is provided for conversion of thermal energy to electric energy, or electric energy to refrigeration. In n-type heat-to-electricity embodiments, a highly doped n* emitter region made of a metal or semiconductor injects carriers into an n-type gap region. A p-type layer is positioned between the emitter region and gap region, allowing for discontinuity of corresponding Fermi-levels and forming a potential barrier to sort electrons by energy. Additional p-type layers can optionally be formed on the collector side of the converter. One type of these layers with higher carrier concentration (p*) serves as a blocking layer at the cold side of the converter, and another layer (p**) with carrier concentration close to the gap reduces a thermoelectric back flow component. Ohmic contacts on both sides of the device close the electrical circuit through an external load to convert heat to electricity.Type: GrantFiled: March 15, 2004Date of Patent: September 19, 2006Assignee: Eneco, Inc.Inventors: Yan R. Kucherov, Peter L. Hagelstein
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Patent number: 7098393Abstract: A thermoelectric device formed of nanowires on the nm scale. The nanowires are preferably of a size that causes quantum confinement effects within the wires. The wires are connected together into a bundle to increase the power density.Type: GrantFiled: May 17, 2002Date of Patent: August 29, 2006Assignee: California Institute of TechnologyInventors: Jean-Pierre Fleurial, Margaret A. Ryan, Alexander Borshchevsky, Jennifer Herman
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Patent number: 7067733Abstract: Thermoelectric material is produced through a process sequence including a liquid quenching, a primary solidification such as a hot pressing or extrusion and an upset forging; although the C-planes of the crystal grains are directed in parallel to the direction in which the force is exerted on flakes during the hot pressing/extrusion, the a-axes are randomly directed; the a-axes are oriented in a predetermined direction through the upset forging; this results in improvement of electric resistivity without reduction in the figure of merit.Type: GrantFiled: December 12, 2002Date of Patent: June 27, 2006Assignee: Yamaha CorporationInventors: Yuma Horio, Junya Suzuki
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Patent number: 7002071Abstract: A thermoelectric conversion material is formed of a polycrystal structure of crystal grains composed of a silicon-rich phase, and an added element-rich phase in which at least one type of added element is deposited at the grain boundary thereof, the result of which is an extremely large Seebeck coefficient and low thermal conductivity, allowing the thermoelectric conversion rate to be raised dramatically, and affording a silicon-based thermoelectric conversion material composed chiefly of silicon, which is an abundant resource, and which causes extremely low environmental pollution.Type: GrantFiled: March 10, 2000Date of Patent: February 21, 2006Assignee: Sumitomo Special Metals Co. Ltd.Inventors: Nobuhiro Sadatomi, Osamu Yamashita, Tsunekazu Saigo, Masao Noumi
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Patent number: 6991370Abstract: The temperature measuring apparatus according to the present invention is of the high melting point metal carbide—carbon system material thermocouple type. According to this temperature measuring apparatus, it is possible to measure temperatures from a room temperature range to a high temperature range in excess of 2000° C. continuously, stably and with good accuracy. A constitution is preferable wherein a rod-like member formed of high melting point metal carbide is inserted into a pipe-like member with a bottom formed of carbon system material, and connected at the bottom to serve as a temperature measuring portion.Type: GrantFiled: July 22, 2003Date of Patent: January 31, 2006Assignee: Kobe Steel, Ltd.Inventors: Shigeo Kofune, Takao Fujikawa
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Patent number: 6958443Abstract: Disclosed is a foil segment for a thermoelectric generator comprising a top plate disposed in spaced relation above a bottom plate. An array of the foil segments is perpendicularly disposed in side-by-side arrangement between and in thermal contact with the bottom and top plates. Each foil segment comprises a substrate having a thickness of about 7.5-50 microns, opposing front and back substrate surfaces and a series of spaced alternating n-type and p-type thermoelectric legs disposed in parallel arrangement on the front substrate surface. Each of the n-type and p-type legs is formed of a bismuth telluride-based thermoelectric material having a thickness of about 5-100 microns, a width of about 10-100 microns and a length of about 100-500 microns. The alternating n-type and p-type thermoelectric legs are electrically connected in series and thermally connected in parallel such that a temperature differential between the bottom and top plates results in the generation of power.Type: GrantFiled: May 19, 2003Date of Patent: October 25, 2005Assignee: Applied Digital SolutionsInventors: Ingo Stark, Peter Zhou
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Patent number: 6833083Abstract: Compounds are expressed by general formula of AxBC2−y where 0≦x≦2 and 0≦y<1, and have CdI2 analogous layer structures; A-site is occupied by at least one element selected from the group consisting of Li, Na, K, Rb, Cs, Mg, Ca, Sr, Ba, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Zr, Nb, Mo, Ru, Rh, Pd, Ag, Cd, Hf, Ta, W, Re, Ir, Pt, Au, Sc, rare earth elements containing Y, B, Al, Ga, In, Tl, Sn, Pb and Bi; B-site is occupied by at least one element selected from the group consisting of Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, W, Ir, and Sn; C-site is occupied by at least one element selected from the group consisting of S, Se and Te; the compounds exhibit large figure of merit so as to be preferable for thermoelectric generator/refrigerator.Type: GrantFiled: February 25, 2002Date of Patent: December 21, 2004Assignee: NEC CorporationInventors: Hideto Imai, Yuichi Shimakawa, Takashi Manako, Yoshimi Kubo
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Patent number: 6774298Abstract: A thermoelectric module which includes case 1, heat-radiation side insulating substrate 4a, heat-absorption side insulating substrate 4b, first soldering layer 5a formed of a first soldering agent to connect the heat-radiation side insulating substrate 4a and the case 1, a plurality of P-type and N-type semiconductor chips interposed between the heat-radiation side insulating substrate 4a and the heat-absorption side insulating substrate 4b, the plurality of P-type and N-type semiconductor chips being arranged alternately, and a second soldering layer 15a (15b) formed of a second soldering agent to connect the heat-radiation side insulating substrate 4a and one end of each of the plural P-type and N-type semiconductor chips (the heat-absorption side insulating substrate 4b and the other end of each of the plural P-type and N-type semiconductor chips), the first soldering agent and the second soldering agent being identical in raw material.Type: GrantFiled: January 31, 2002Date of Patent: August 10, 2004Assignee: Aisin Seiki Kabushiki KaishaInventors: Hitoshi Tauchi, Masato Itakura, Hirotsugu Sugiura
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Patent number: 6759587Abstract: The present invention provides the novel thermoelectric materials having, in combination, processability and excellent thermoelectric characteristics, the thermoelectric materials being able to provide n-type thermoelectric characteristics in accordance with the nature of the employed inorganic thermoelectric materials; a thermoelectric device employing the materials; and a method for producing the thermoelectric materials.Type: GrantFiled: April 26, 2002Date of Patent: July 6, 2004Assignees: Hokushin CorporationInventors: Naoki Toshima, Hu Yan, Kohsuke Kamei, Akinori Tsubata, Takashi Tokuda
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Patent number: 6759586Abstract: Disclosed is a thermoelectric module, comprising a plurality of p-type thermoelectric elements each comprising a p-type semiconductor having a skutterdite crystal structure, a plurality of n-type thermoelectric elements each comprising a n-type semiconductor having a skutterdite crystal structure, at least one first electrode, at least one second electrode, at least one first alloy layer and at least one second alloy layer, wherein said at least one first alloy layer and said at least one second alloy layer contain Sb and at least one transition metal element selected from the group consisting of Ag, Au and Cu.Type: GrantFiled: March 26, 2002Date of Patent: July 6, 2004Assignee: Kabushiki Kaisha ToshibaInventors: Naoki Shutoh, Hiromitsu Takeda, Naruhito Kondo
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Patent number: 6756536Abstract: A thermoelectric microactuator on a substrate includes a first temperature control element having a first surface bonded to the substrate and having a second surface. A first electrically nonconductive layer has a first surface bonded to the second surface of the first temperature control element and has a second surface. An actuator arm includes a first region bonded to the second surface of the first nonconductive layer and includes a flexure contiguously extending from the first region to an end cantilevered beyond the first nonconductive layer and forming an axis at the junction of the flexure and the first region. The first temperature control element controls the temperature of the actuator arm to thereby deflect the flexure about the axis.Type: GrantFiled: March 28, 2002Date of Patent: June 29, 2004Assignee: Bae Systems Information and Electronic Systems Integration Inc.Inventors: Thomas J. McIntyre, Andrew TS Pomerene
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Publication number: 20040112418Abstract: The present invention provides a thermoelectric material made from the ZrNiSn-based, half-Heusler structure where Pd is alloyed on the site of Ni, Hf alloyed on Zr, and Sb doped on Sn, all in accordance with the formula Zr0 5Hf0.5Ni1-xPdxSn0.99Sb0 01. The structure significantly increases the value of the figure of merit (ZT) by decreasing the structure's thermal conductivity, without significant increases to its Seebeck coefficient.Type: ApplicationFiled: December 12, 2002Publication date: June 17, 2004Inventors: Jihui Yang, Lidong Chen, Gregory Paul Meisner, Ctirad Uher
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Patent number: 6743973Abstract: Thermoelectric material of (Bi, Sb)(Te, Se) system is produced through a liquid quenching method and an extrusion from a die unit having an inlet portion and an outlet portion crossing each other at 30-150 degrees so that the crystal grains have an average grain size equal to or less than 30 microns and (001) planes mostly oriented in parallel to a direction in which electric current to flow, thereby achieving the figure of merit equal to or greater than 3.0×10−3/K.Type: GrantFiled: November 29, 2001Date of Patent: June 1, 2004Assignee: Yamaha CorporationInventors: Takahiro Hayashi, Yuma Horio, Toshiharu Hoshi
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Patent number: 6696635Abstract: A thermoelectric cooler utilizing superlattice and quantum-well materials may be deposited directly onto a die using thin-film deposition techniques. The materials may have a figure-of-merit of greater than one.Type: GrantFiled: March 7, 2002Date of Patent: February 24, 2004Assignee: Intel CorporationInventor: Ravi Prasher
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Patent number: 6670539Abstract: A thermoelectric material that exhibits enhanced thermoelectric power, and thus an improvement in the thermoelectric figure of merit. Bismuth, as elemental bismuth, a bismuth alloy, a bismuth intermetallic compound, a mixture of these, or any of these including a dopant, is embedded in the pores of a host material having an average pore size in the range of about 5-15 nm. A method of making a composite thermoelectric material is also provided in which a porous host material is provided having an average pore size of about 5-15 nm, and a vapor of a bismuth-based material is caused to flow into the pores from a vapor inlet side of the host material to a vapor outlet side. The host material is then cooled from the vapor outlet side to progressively condense the vapor in the holes in the direction from the outlet side to the inlet side to progressively form nanowires of the bismuth-based material in the pores.Type: GrantFiled: May 9, 2002Date of Patent: December 30, 2003Assignee: Delphi Technologies, Inc.Inventors: Joseph Pierre Heremans, Christopher Mark Thrush, Donald T. Morelli
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Patent number: 6670538Abstract: A radiation sensor which includes a thermopile for detecting radiant energy. The thermopile and a support rim for the thermopile are fabricated as an integrated unit to form a support chip. The support chip is mated to a mating chip so that the thermopile is positioned in an inner cavity region of the radiation sensor. The sensor has a window which permits the transmission of radiant energy into the enclosure such that the radiant energy impinges upon a central absorber region of the thermopile.Type: GrantFiled: January 2, 2002Date of Patent: December 30, 2003Assignee: Endevco CorporationInventors: Leslie Bruce Wilner, Andrew J. Meyer, James Tjan-Meng Suminto, Joseph Salvatore Fragala
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Publication number: 20030234037Abstract: A thermoelectric conversion unit comprising a thermoelectric conversion device 1 having a cleavage plane 2 and electrodes 3 formed on a pair of opposing surfaces of the thermoelectric conversion device 1, the angle subtended by the electrode-forming surfaces 4 of the thermoelectric conversion device 1 and by the cleavage plane 2 being not smaller than 45 degrees, the surface roughness Ra on the electrode-forming surfaces 4 being from 0.1 to 5 &mgr;m, and the electrodes 3 having a thickness larger than a maximum surface roughness Rmax of the electrode-forming surfaces 4. The thermoelectric conversion unit features a high adhesion strength between the thermoelectric conversion device 1 and the electrodes 3, and high reliability.Type: ApplicationFiled: April 24, 2003Publication date: December 25, 2003Applicant: KYOCERA CORPORATIONInventor: Koichi Tanaka
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Patent number: 6653548Abstract: A cuboid p-type and an n-type thermoelectric conversion material having a composite of an alloy powder for a rare earth magnet and a bismuth-based thermoelectric conversion material that has been rendered a p-type semiconductor or an n-type semiconductor by the addition of the required dopant, are arranged alternately with a material with low thermal conductivity and high electrical resistivity interposed between them. The low- and the high-temperature sides of these thermoelectric conversion materials are connected with wires, a magnetic field is applied in the x axis direction, a temperature gradient ∇T is imparted in the z axis direction a p-n junction is created, and thermoelectromotive force is extracted from the connection end in a plane in the y axis direction. There is a marked increase in the Seebeck coefficient even though no magnetic field is applied externally.Type: GrantFiled: October 10, 2001Date of Patent: November 25, 2003Assignee: Sumitomo Special Metals Co., Ltd.Inventor: Osamu Yamashita
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Publication number: 20030183267Abstract: A thermoelectric microactuator on a substrate includes a first temperature control element having a first surface bonded to the substrate and having a second surface. A first electrically nonconductive layer has a first surface bonded to the second surface of the first temperature control element and has a second surface. An actuator arm includes a first region bonded to the second surface of the first nonconductive layer and includes a flexure contiguously extending from the first region to an end cantilevered beyond the first nonconductive layer and forming an axis at the junction of the flexure and the first region. The first temperature control element controls the temperature of the actuator arm to thereby deflect the flexure about the axis.Type: ApplicationFiled: March 28, 2002Publication date: October 2, 2003Applicant: BAE SYSTEMS Information & Electronic Systems Integration Inc.Inventors: Thomas J. McIntyre, Andrew TS Pomerene
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Patent number: 6620994Abstract: A thermoelectric module including a couple formed between two bismuth telluride thermoelectrodes. The first thermoelectrode is doped with palladium, selenium, or a combination of the two. The second thermoelectrode is doped with antimony, gold, or a combination of the two. Multiple thermoelectric modules may be used in series and parallel to achieve the desired voltage and current outputs.Type: GrantFiled: October 4, 2001Date of Patent: September 16, 2003Assignee: Leonardo Technologies, Inc.Inventor: Andrea Rossi
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Publication number: 20030168094Abstract: A thermoelectric material is prepare by mixing and melting at least two members selected from bismuth, tellurium, selenium, antimony, and sulfur to obtain an alloy ingot; grinding the alloy ingot to obtain powder of the alloy ingot; and hot pressing the powder of the alloy ingot. The hot pressing is performed under the conditions of a temperature of 500° C. or higher and 600° C. or lower and a pressure of 20 MPa or higher and 45 MPa or lower.Type: ApplicationFiled: February 13, 2003Publication date: September 11, 2003Applicant: MITSUI MINING & SMELTING CO., LTD.Inventors: Norihiko Miyasita, Tomoyasu Yano, Ryoma Tsukuda, Isamu Yashima
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Patent number: 6596226Abstract: A process for producing a thermoelectric material based on two or more elements selected in the group constituted by Bi, Sb, Te and Se, which process comprises: i. an alloying step wherein determined amounts of the elements Bi, Sb, Te or Se are mixed until an homogenous powdered alloy is obtained; ii. an extrusion step of the powdered homogenous alloy obtained in the preceding step. The elements Bi, Sb, Te or Se being preferably mechanically mixed in an homogenous powdered alloy. The thermoelectric material, which are obtainable by this process, exhibits improved thermoelectric and mechanical properties and are therefore suitable, for example, as cooler, as temperature stabilizer in a electronic device or as power generator.Type: GrantFiled: August 24, 2000Date of Patent: July 22, 2003Assignee: 5NPLUS Inc.Inventors: Jean-Pierre Simard, Dmitri Vasilevskiy, Jacques L'Ecuyer
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Publication number: 20030131878Abstract: Thermoelectric material is produced through a process sequence including a liquid quenching, a primary solidification such as a hot pressing or extrusion and an upset forging; although the C-planes of the crystal grains are directed in parallel to the direction in which the force is exerted on flakes during the hot pressing/extrusion, the a-axes are randomly directed; the a-axes are oriented in a predetermined direction through the upset forging; this results in improvement of electric resistivity without reduction in the figure of merit.Type: ApplicationFiled: December 12, 2002Publication date: July 17, 2003Inventors: Yuma Horio, Junya Suzuki
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Patent number: 6563039Abstract: A high-efficiency thermoelectric unicouple is used for power generation. The unicouple is formed with a plurality of legs, each leg formed of a plurality of segments. The legs are formed in a way that equalized certain aspects of the different segments. Different materials are also described.Type: GrantFiled: January 17, 2001Date of Patent: May 13, 2003Assignee: California Institute of TechnologyInventors: Thierry Caillat, Jean-Pierre Fleurial, Alexander Borshchevsky, G. Jeffrey Snyder, Andrew Zoltan, Leslie Zoltan
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Patent number: 6552255Abstract: The thermoelectric properties (resistivity, thermopower and thermal conductivity) of single crystals of the low-dimensional pentatelluride materials are disclosed. The pentatellurides are well suited for use in thermoelectric devices. In general, the pentatellurides include hafnium pentatelluride and zirconium pentatelluride, which can both be substituted with selective amounts of various metals, including titanium, selenium, and antimony.Type: GrantFiled: September 3, 1999Date of Patent: April 22, 2003Assignee: Clemson UniversityInventors: Terry M. Tritt, Roy L. Littleton, Joseph Kolis, Christopher Feger
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Publication number: 20030056819Abstract: Compounds are expressed by general formula of AxBC2−y where 0≦x≦2 and 0≦y<1, and have CdI2 analogous layer structures; A-site is occupied by at least one element selected from the group consisting of Li, Na, K, Rb, Cs, Mg, Ca, Sr, Ba, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Zr, Nb, Mo, Ru, Rh, Pd, Ag, Cd, Hf, Ta, W, Re, Ir, Pt, Au, Sc, rare earth elements containing Y, B, Al, Ga, In, Tl, Sn, Pb and Bi; B-site is occupied by at least one element selected from the group consisting of Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, W, Ir, and Sn; C-site is occupied by at least one element selected from the group consisting of S, Se and Te; the compounds exhibit large figure of merit so as to be preferable for thermoelectric generator/refrigerator.Type: ApplicationFiled: February 25, 2002Publication date: March 27, 2003Applicant: NEC CorporationInventors: Hideto Imai, Yuichi Shimakawa, Takashi Manako, Yoshimi Kubo
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Patent number: 6525260Abstract: A silicon-based polycrystal powder, which contains no more than 30 at % Ge, C, Sn, or another such element that does not generate carriers as well as an added element that does generate carriers, and which has a crystal structure including crystal grains made up of at least 80 at % silicon, and a grain boundary phase where at least one type of said added element is precipitated at the boundary of said crystal grains, is mixed with a clathrate compound powder with low thermal conductivity and electrical resistivity, and this mixture is subjected to hot compression molding, the product of which has a composite structure in which the particles of the clathrate compound polycrystals are disposed around the particles of the silicon-based polycrystals.Type: GrantFiled: August 17, 2001Date of Patent: February 25, 2003Assignee: Sumitomo Special Metals Co., Ltd.Inventors: Osamu Yamashita, Nobuhiro Sadatomi, Tsunekazu Saigo
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Publication number: 20030029492Abstract: A thermoelectric material comprising a Group IV element boride doped with one of the Group III, IV, or V elements, wherein the doping element is different from the Group IV element in the Group IV element boride, and the doping element is not boron. A method of fabricating a thermoelectric material including the steps of: providing a Group IV element boride, and doping the Group IV element boride with a doping element chosen from one of the column III, IV, or V elements, wherein the doping element is different from the Group IV element in the Group IV element boride, and the doping element is not boron. An alternate method of fabricating a thermoelectric material is also disclosed including the steps of simultaneously growing on a substrate a Group IV element boride and at least one doping element chosen from one of the Group III, IV, or V elements wherein the doping element is different than the Group IV element in the Group IV element boride and the doping element is not boron.Type: ApplicationFiled: August 13, 2001Publication date: February 13, 2003Applicant: Motorola, Inc.Inventors: Jun Wang, Daniel S. Marshall
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Publication number: 20020170590Abstract: A thermoelectric material that exhibits enhanced thermoelectric power, and thus an improvement in the thermoelectric figure of merit. Bismuth, as elemental bismuth, a bismuth alloy, a bismuth intermetallic compound, a mixture of these, or any of these including a dopant, is embedded in the pores of a host material having an average pore size in the range of about 5-15 nm. A method of making a composite thermoelectric material is also provided in which a porous host material is provided having an average pore size of about 5-15 nm, and a vapor of a bismuth-based material is caused to flow into the pores from a vapor inlet side of the host material to a vapor outlet side. The host material is then cooled from the vapor outlet side to progressively condense the vapor in the holes in the direction from the outlet side to the inlet side to progressively form nanowires of the bismuth-based material in the pores.Type: ApplicationFiled: May 9, 2002Publication date: November 21, 2002Inventors: Joseph Pierre Heremans, Christopher Mark Thrush, Donald T. Morelli
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Patent number: 6444896Abstract: Quantum-dot superlattice (QLSL) structures having improved thermoelectric properties are described. In one embodiment, PbSexTe1−x/PbTe QDSLs are provided having enhanced values of Seebeck coefficient and thermoelectric figure of merit (ZT) relative to bulk values.Type: GrantFiled: August 25, 2000Date of Patent: September 3, 2002Assignee: Massachusetts Institute of TechnologyInventors: Theodore C. Harman, Patrick J. Taylor, Michael P. Walsh
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Patent number: RE39640Abstract: A family of isostructural compounds have been prepared having the general formula AnPbmBinO2n+m. These compounds possess a NaCl lattice type structure as well as low thermal conductivity and controlled electrical conductivity. Furthermore, the electrical properties can be controlled by varying the values for n and m. These isostructural compounds can be used for semiconductor applications such as detectors, lasers and photovoltaic cells. These compounds also have enhanced thermoelectric properties making them excellent semiconductor materials for fabrication of thermoelectric devices.Type: GrantFiled: November 6, 2003Date of Patent: May 22, 2007Assignee: Board of Trustees operating Michigan State UniversityInventors: Mercouri G. Kanatzidis, Duck-Young Chung, Stephane DeNardi, Sandrine Sportouch