Abstract: A thermoelectric material can be obtained by co-pulverizing and mixing a material containing at least bismuth and a material containing at least tellurium, without being alloyed by melting, and then molding and sintering. This thermoelectric material has high performance and can be utilized in a variety of fields such as thermoelectric power generation and thermoelectric cooling, a temperature sensor space development, marine development, and electric power generation in the remote areas. Since metal elements are used as a starting material, the starting material can be easily prepared. Moreover, in the production steps, the thermoelectric material can be produced in a high yield at a low energy consumption level by a simplified manner, without a complicated operation or special apparatus, and its production cost can be decreased.

Abstract: A p-type Fe silicide thermoelectric conversion material comprises an Fe silicide, wherein at least one of Cr and V is substituted for part of Fe in the Fe silicide. The Fe silicide is chemically expressed as Fe.sub.1-x M.sub.x Si.sub.2, wherein the value of x falls within a range of 0.01 to 0.1, and M represents the at least one of Cr and V. Alternatively, at least one of Cr and V, and Mn are substituted for part of Fe in the Fe silicide. In this case, the Fe silicide is chemically expressed as Fe.sub.1-x (M+Mn).sub.x Si.sub.2, wherein the value of x falls within a range of 0.01 to 0.1, where M represents the at least one of Cr and V.

Abstract: An alkali metal thermoelectric conversion device formed from a porous tube or plate coated with a thin film of beta-alumina, the porous tube or plate is sintered metal or metal alloy having a coefficient of thermal expansion which approaches that of the beta-alumina to form a mechanically stable device with high electrical output.

Abstract: A temperature difference detecting element utilizing thermoelectromotive force which is generated by a Seebeck effect when temperature gradients are applied to a semiconductive ceramic material. A substrate has a plurality of thermoelements. Each thermoelement comprises a semiconductive ceramic material and a pair of hot-side and cold-side electrodes which are provided on the semiconductive ceramic material with a prescribed spacing, to form a hot junction and a cold junction respectively. A plurality of such hot-side electrodes are arranged on a first region of the substrate to be adjacent to each other, while a plurality of such cold-side electrodes are arranged on a second region of the substrate to be adjacent to each other. The plurality of thermoelements are sequentially connected in series with each other by electrically connecting, for example, the hot-side electrodes of the thermoelements with the cold-side electrodes of those adjacent thereto.

Abstract: A mineral-insulated metal sheathed cable comprising at least one type K thermoelement and characterized in that the sheath alloy consists essentially of up to about 40 weight-% chromium, up to about 10 weight-% niobium, about 0.5 to about 5.0 weight-% silicon, up to about 0.5 weight-% magnesium, up to about 0.3 weight-% cerium, and the balance nickel.

Abstract: The disclosed invention includes improved devices and materials for thermoelectric conversion, particularly for operation at temperatures of 300.degree. C. and below. Disordered p-type semiconductor elements incorporate compound adjuvants of silver and lead to achieve enhanced "figure of merit" values and corresponding increased efficiencies of thermoelectric conversion. Similar results are obtained with disordered n-type elements by employing lowered selenium contents, preferably in combination with cuprous bromide.Improved conversion devices include powder pressed elements from one or both of these materials.

Abstract: An invention is disclosed which provides improved thermoelectric devices and methods of making and using the same. The device exhibits enhanced efficiency and operating life through the use of a bonding material comprising at least 75% busmuth together with an adherent metallic layer interposed between the boundary structure and correspondary thermoelectric semiconductor element.

Abstract: A method of manufacturing a film thermopile, whereby a film of a thermoelectric semiconductor material which is an n-type stoichiometric solid solution containing Bi.sub.2 Te.sub.3 and Sb.sub.2 Te.sub.3 is deposited on a substrate. Then heating is effected so that adjacent arms of the film are at different temperatures, some at a temperature of not above 300.degree. C, and others at a temperature of not less than 350.degree. C.

Abstract: Thermocouples of the present invention provide stability and performance reliability in systems involving high temperatures and vacuums by employing a bimetallic thermocouple sensor wherein each metal of the sensor is selected from a group of metals comprising tantalum and rhenium and alloys containing only those two metals. The tantalum, rhenium thermocouple sensor alloys provide bare metal thermocouple sensors having advantageous vapor pressure compatibilities and performance characteristics. The compatibility and physical characteristics of the thermocouple sensor alloys of the present invention result in improved emf, temperature properties and thermocouple hot junction performance. The thermocouples formed of the tantalum, rhenium alloys exhibit reliability and performance stability in systems involving high temperatures and vacuums and are adaptable to space propulsion and power systems and nuclear environments.

Abstract: Improved alloys suitable for thermoelectric applications and having the general formula:(AgSbTe.sub.2).sub.1.sub.-x + (GeTe).sub.xwherein x has a value of about 0.80 and 0.85, have been found to possess unexpectedly high thermoelectric properties such as efficiency index, as well as other improved physical properties.