Abstract: Disclosed herein are organic photosensitive optoelectronic devices comprising acceptor and/or donor sensitizers to increase absorption and photoresponse of the photoactive layers of the devices. In particular, devices herein include at least one acceptor layer and at least one donor layer, wherein the acceptor layer may comprise a mixture of an acceptor material and at least one sensitizer, and the donor layer may comprise a mixture of a donor material and at least one sensitizer. Methods of fabricating the organic photosensitive optoelectronic devices are also disclosed.

Abstract: The present disclosure provides an image sensor and control method thereof. The image sensor includes a first transparent conductive layer, a second conductive layer, an optical sensor and a semiconductor substrate. The optical sensor is arranged between the first transparent conductive layer and the second conductive layer, and includes a photoelectric conversion layer, wherein the photoelectric conversion layer has a thickness ranging from 500 to 10000 nm, and the optical sensor has a plurality of absorption spectrum ranges. The semiconductor substrate is below the second conductive layer.

Abstract: There is provided a photoelectric conversion film including a quinacridone derivative represented by the following General formula and a subphthalocyanine derivative represented by the following General formula.

Abstract: A method for enhancing the stability of an N-type semiconductor through oxygen elimination includes constructing an antioxidant layer on the surface of a semiconductor material, or blending the antioxidant with the N-type semiconductor material. The antioxidant removes the existing oxygen and related species in the N-type semiconductor, eliminates the related trap state, and prevents the N-type semiconductor from further degrading, so that the electrical properties such as mobility of the N-type semiconductor device are improved, and the operation stability and long-term storage stability are improved. In addition, the antioxidant also inhibits the photobleaching of N-type semiconductors and significantly improves the photochemical stability of N-type semiconductors.

Abstract: A sensor includes first and second electrodes, and an infrared photoelectric conversion layer between the first and second electrodes, the infrared photoelectric conversion layer being configured to absorb light in at least a portion of an infrared wavelength spectrum and convert the absorbed light to an electrical signal. The infrared photoelectric conversion layer includes a first material having a maximum absorption wavelength in an infrared wavelength spectrum, a second material forming a pn junction with the first material, and a third material having an energy band gap greater than the energy band gap of the first material by greater than or equal to about 1.0 eV. The first material, the second material, and the third material are different from each other, and each of the first material, the second material, and the third material is a non-polymeric material.

Abstract: The present disclosure relates generally to anti-cancer pharmaceuticals. More specifically, the disclosure is directed to gold complexes of Formula I with anti-cancer properties. The disclosure also provides a pharmaceutical composition comprising the complexes, a process of synthesizing the complexes and a method of treating cancer. The complexes of the present disclosure have a multi-target approach to cancer therapeutics by inducing cell apoptosis, cytotoxicity, mitochondrial membrane potential depolarization and increasing reactive oxygen species in cancer cells.

Abstract: This light detecting element has a reduced dark current and improved external quantum efficiency. The light detecting element includes a positive electrode, a negative electrode, and an active layer that is provided between said positive electrode and said negative electrode, and that contains a p-type semiconductor material and an n-type semiconductor material. The thickness of the active layer is at least 800 nm. The value obtained by subtracting the absolute value of the LUMO of the n-type semiconductor material from the work function of the surface in contact with the negative electrode side surface of the active layer is 0.0 to 0.5 eV. The absolute value of the LUMO of the n-type semiconductor material is 2.0 to 10.0 eV.

Abstract: Described is an active layer having a first surface region and a bulk region, the active layer comprising a small molecule component and a polymer component, wherein the relative concentration of the small molecule component is lower in the first surface than in the bulk region. Also described is a method of producing a surface-modified active layer comprising the steps of providing a pristine active layer comprising a small molecule component and a polymer component; applying an adhesive to the exposed surface of the pristine active layer to produce an adhesive-bound active layer; and removing the adhesive from the adhesive-bound active layer, and a method of producing electrical energy from sunlight, such as sunlight deposited over bodies of water.

Abstract: Provided is a photoelectric conversion element includes two electrodes forming a positive electrode and a negative electrode, at least one charge blocking layer arranged between the two electrodes, and a photoelectric conversion layer arranged between the two electrodes. The at least one charge blocking layer is an electron blocking layer or a hole blocking layer, and a potential of the charge blocking layer is bent.

Abstract: A self-healing conjugated polymer is disclosed. The self-healing conjugated polymer has hydrogen bonding functional groups introduced into its side chains. Due to this structure, the conjugated polymer is imparted with the ability to recover through self-healing while maintaining its inherent properties (for example, physical and electrical properties). Based on this effective self-healing ability, the conjugated polymer is expected to find application as a biomaterial, a pharmaceutical material, a nonlinear optical material or an organic electronic material.

Abstract: Triazabicylodecene can effectively n-dope a variety of organic semiconductors, including PCBM, thus increasing in-plane conductivities. We synthesized a series of TBD-based n-dopants via an N-alkylation reaction and studied the effect of various alkyl chains on the physical and device properties of the dopants. Combining two TBD moieties on a long alky chain gave a solid dopant, 2TBD-C10, with high thermal stability above 250° C. PCBM films doped by 2TBD-C10 were the most tolerant to thermal annealing and reached in-plane conductivities of 6.5×10?2 S/cm. Furthermore, incorporating 2TBD-C10 doped PCBM as the electron transport layer (ETL) in methylammonium lead triiodide (MAPbI3) based photovoltaics led to a 23% increase in performance, from 11.8% to 14.5% PCE.

Abstract: An organic photodetector comprising a photosensitive organic layer comprising an electron donor and an electron acceptor wherein the electron acceptor is a compound of formula (I): EAG-EDG-EAG??(I) wherein each EAG is an electron accepting group; and EDG is an electron-donating group of formula (II) or (III): A photosensor may comprise the organic photodetector and a light source, e.g. a near infra-red light source.

Abstract: A lead trapping layer includes an acidic cation-exchange resin comprising a formula selected from the group consisting of Formulae (I) to (V) below, in which each M+is independently selected from the group consisting of Sr2+, Ca2+, Ni2+, Cu2+, Co2+, Zn2+, Mg2+, Ba2+, K+, NH4+, Na+, H+, and Li+; and each R is independently selected from the group consisting of SO3H, CH2SO3H, PO3H2, and COOH; and an encapsulation resin selected from the group consisting of epoxy resin, silicone resin, arcrylate resin, and a combination thereof. A solar cell device includes at least one lead trapping layer and a method may prepare the lead trapping layer.

Abstract: Small organic molecule chromophores containing a benzo[c][1,2,5]thiadiazole with an electron-withdrawing substituent W in the 5-position (5BTH), benzo[c][1,2,5]oxadiazole with an electron-withdrawing substituent W in the 5-position (5BO), 2H-benzo[d][1,2,3]triazole (5BTR) with an electron-withdrawing substituent W in the 5-position (5BTR), 5-fluorobenzo[c][1,2,5]thiadiazole (FBTH), 5-fluorobenzo[c][1,2,5]oxadiazole (FBO), or 5-fluoro-2H-benzo[d][1,2,3]triazole (FBTR) core structure are disclosed. Such compounds can be used in organic heterojunction devices, such as organic small molecule solar cells and transistors.

Abstract: The present application provides an encapsulating composition which can effectively block moisture or oxygen introduced into an organic electronic device from the outside, and has excellent spreadability, is applicable to thin organic electronic devices and has excellent hardness of the cured product after curing, without causing an inter-circuit interference problem.

Abstract: Crystallization of perovskite films was performed in supercritical carbon dioxide with and without organic co-solvents. Post deposition crystallization of the films was performed in a binary, single phase supercritical fluid at constant conditions (45° C., 1200 psi) but with varying organic co-solvent volume fractions up to 2%. The co-solvents can provide selective interactions with one or both of the perovskite precursor compounds resulting in different film morphologies ranging from uniform films containing large grains to films exhibiting large cubic or hexagonal crystals or preferential crystallographic orientations. The use of supercritical fluids to enhance or tune crystallization in solid-state thin films could have broad applications toward the realization of high efficiency photovoltaic devices.

Abstract: Provided is a compound of Chemical Formula 1: wherein, in Chemical Formula 1: X1 to X3 are each independently N or CH, provided that at least one of X1 to X3 is N; X4 to X6 are each independently N or CH, provided that at least one of X4 to X6 is N; Ar1 to Ar4 are each independently a substituted or unsubstituted C6-60 aryl, or a substituted or unsubstituted C2-60 heteroaryl containing any one or more selected from the group consisting of N, O, and S; L1 to L3 are each independently a single bond, a substituted or unsubstituted C6-60 arylene, or a substituted or unsubstituted C2-60 heteroarylene containing any one or more selected from the group consisting of N, O, and S; and n is 1 or 2, and an organic light emitting device including the same.

Abstract: To provide a photoelectric conversion element capable of further improving performance in a photoelectric conversion element using an organic semiconductor material. The photoelectric conversion element includes a first electrode and a second electrode arranged to face each other, and a photoelectric conversion layer 17 provided between the first electrode and the second electrode, in which the photoelectric conversion layer 17 includes a first organic semiconductor material and a second organic semiconductor material, and at least one of the first organic semiconductor material or the second organic semiconductor material is an organic molecule having a HOMO volume fraction of 0.15 or less or a LUMO volume fraction of 0.15 or less.

Abstract: An organic semiconductor mixture and an organic optoelectronic device containing the same are provided. A n-type organic semiconductor compound in the organic semiconductor mixture has a novel chemical structure so that the mixture has good thermal stability and property difference during batch production is also minimized. The organic semiconductor mixture is applied to organic optoelectronic devices such as organic photovoltaic devices for providing good energy conversion efficiency while in use.

Abstract: A method for producing a nickel cobalt complex hydroxide includes first crystallization of supplying a solution containing Ni, Co and Mn, a complex ion forming agent and a basic solution separately and simultaneously to one reaction vessel to obtain nickel cobalt complex hydroxide particles, and a second crystallization of, after the first crystallization, further supplying a solution containing nickel, cobalt, and manganese, a solution of a complex ion forming agent, a basic solution, and a solution containing said element M separately and simultaneously to the reaction vessel to crystallize a complex hydroxide particles containing nickel, cobalt, manganese and said element M on the nickel cobalt complex hydroxide particles crystallizing a complex hydroxide particles comprising Ni, Co, Mn and the element M on the nickel cobalt complex hydroxide particles.

Abstract: A device, comprising: a flexible carrier; a release layer that is formed on the flexible carrier; a releasable substrate formed over the release layer; and a semiconductor structure that is formed over the releasable substrate.

Abstract: A light-emitting device includes: a first electrode; a second electrode facing the first electrode; and an interlayer between the first electrode and the second electrode and including an emission layer, wherein the interlayer includes i) a hole transport region between the first electrode and the emission layer, and ii) an electron transport region between the emission layer and the second electrode, and the hole transport region includes a Group 11 metal chalcogenide compound including a Group 11 metal and a chalcogenide element with the proviso that oxygen is excluded from the chalcogenide element.

Abstract: The invention provides an optoelectronic device comprising a porous material, which porous material comprises a semiconductor comprising a perovskite. The porous material may comprise a porous perovskite. Thus, the porous material may be a perovskite material which is itself porous. Additionally or alternatively, the porous material may comprise a porous dielectric scaffold material, such as alumina, and a coating disposed on a surface thereof, which coating comprises the semiconductor comprising the perovskite. Thus, in some embodiments the porosity arises from the dielectric scaffold rather than from the perovskite itself. The porous material is usually infiltrated by a charge transporting material such as a hole conductor, a liquid electrolyte, or an electron conductor. The invention further provides the use of the porous material as a semiconductor in an optoelectronic device. Further provided is the use of the porous material as a photosensitizing, semiconducting material in an optoelectronic device.

Abstract: A method of fabricating a multi-junction photosensitive device is provided. The method may include fabricating at least two photoactive layers, wherein at least one photoactive layer is fabricated on a transparent substrate, and at least one photoactive layer is fabricated on a reflective substrate, patterning at least one optical filter layer on at least one photoactive layer fabricated on a transparent substrate, and bonding the at least two photoactive layers using cold weld or van der Waals bonding. A multi-junction photosensitive device is also provided. The device may have at least two photoactive layers, and at least one optical filter layer, wherein at least two layers are bonded using cold weld or van der Waals bonding. The optical filter layer may be a Distributed Bragg Reflector.

Abstract: A perovskite-polymer composite comprising a perovskite and a polymer, wherein the polymer has a structural unit comprising a thiourea (—HN(C?S)NH—) fragment and a (—R1—O—R2—) fragment, wherein R1 and R2 are each independently a C1-C6 alkyl or a cycloalkyl linker; a mechanically robust and self-healable solar cell comprising same; and a method of making same.

Abstract: An electrochromic compound has a structure represented by the following general formula (1): where each of X1 to X3 independently represents a carbon atom or a silicon atom, and each of R1 to R15 independently represents a member selected from a hydrogen atom, a halogen atom, a monovalent organic group, and a polymerizable functional group.

Abstract: A sensor includes a first electrode and a second electrode, and a photo-active layer between the first electrode and the second electrode. The photo-active layer includes a light absorbing semiconductor configured to form a Schottky junction with the first electrode. The photo-active layer has a charge carrier trapping site configured to capture photo-generated charge carriers generated based on the light absorbing semiconductor absorbing incident light that enters at least the photo-active layer at a position adjacent to the first electrode. The sensor is configured to have an external quantum efficiency (EQE) that is adjusted based on a voltage bias being applied between the first electrode and the second electrode.

Abstract: The invention relates to methods for producing a light-absorbing material with a perovskite-like structure, and can be used to form a light-absorbing layer in the production of photovoltaic cells for saving the materials and increasing the allowable size of converters. These advantages are achieved by forming a uniform layer of component B on the substrate, preparing a mixture of reagents that react with component B under predetermined conditions, and a reaction inhibitor that suppresses this reaction under these conditions; the prepared mixture is applied in stoichiometric amount or greater than stoichiometric on the layer of component B and the reaction inhibitor is removed from the mixture, ensuring activation of the chemical reaction between the mixture of reagents and component B to form films of perovskite-like material.

Abstract: The present invention relates to a novel cathode buffer layer material, and an organic or organic/inorganic hybrid photoelectric device comprising same, and, if a novel compound of the present invention is applied to a cathode buffer layer of an organic photoelectric device such as organic solar cells, organic photodiode, colloidal quantum dot solar cell, and perovskite solar cell, a surface property of an electron transfer layer is improved via a high dipole moment of the novel compound, an electron can be easily extracted from a photoactive layer to a cathode electrode, and series resistance and leakage current can be reduced, thereby having a useful industrial effect, as performance of the organic or organic/inorganic hybrid photoelectric device being manufactured, such as an organic solar cell, organic photodiode, colloidal quantum dot solar cell, and perovskite solar cell, can be significantly improved.

Abstract: The present invention relates to a method for laminating solar cell modules comprising a plurality of solar cells electrically connected in series.

Abstract: The invention provides for polymer structures and their preparation and resulting novel functionalities including open-shell character and high intrinsic conductivity with wide-range tenability. Electrical conductivity can be further modulated by introducing or blending with materials, fillers, dopants, and/or additives. The materials or resultant composites of the invention can be processed by various techniques into different forms to realize multiple applications.

Abstract: The present disclosure relates to transparent P materials and their use in absorption layer(s), photoelectric conversion layer(s) and/or an organic image sensor and methods for their synthesis.

Abstract: The present disclosure relates to a composition that includes a first layer that includes a perovskite defined by ABX3 and a second layer that includes a perovskite-like material defined by at least one of A?2B?X?4, A?3B?2X?9, A?B?X?4, A?2B?X?6, and/or A?2AB?2X?7, where the first layer is adjacent to the second layer, A is a first cation, B is a second cation, X is a first anion, A? is a third cation, B? is a fourth cation, X? is a second anion, and A? is different than A.

Abstract: A solar cell according to the present disclosure includes a first electrode, a second electrode, a photoelectric conversion layer located between the first electrode and the second electrode, and a first electron transport layer located between the first electrode and the photoelectric conversion layer, in which at least one selected from the group consisting of the first electrode and the second electrode is translucent, the photoelectric conversion layer contains a perovskite compound composed of a monovalent cation, a Sn cation, and a halogen anion, and the first electron transport layer contains a niobium oxide halide.

Abstract: Organic photoelectric device comprises a first electrode, a first carrier transfer layer, an active layer, a second carrier transfer layer and a second electrode. The first electrode is a transparent electrode. The active layer includes at least one organic semiconductor material including a structure such as Formula I: The second carrier transfer layer is composed between the active layer and the second electrode. When X1 and X2 are selected from one of Si, Ge and derivatives thereof, the active layer further includes an organic solvent, and the solubility of the organic solvent to the active layer is not less than 5 mg/mL. When X1 and X2 are selected from one of C and its derivatives, the active layer further includes an additive. The power conversion efficiency of the organic photoelectric device of the present invention can be up to more than 14%.

Abstract: The present application relates to a compound of Chemical Formula 1 and an organic light emitting device including the same.

Abstract: Disclosed are an organic photoelectric device including a first electrode and a second electrode facing each other and a photoelectric conversion layer between the first electrode and the second electrode, wherein the photoelectric conversion layer includes a p-type semiconductor, an n-type semiconductor, and an n-type dopant represented by Chemical Formula 1, and an image sensor and an electronic device including the same. Definitions of Chemical Formula 1 are the same as defined in the detailed description.

Abstract: A flexible display device that can conform to complex curved surfaces, and methods for manufacturing said display device, are disclosed herein. The display device utilizes a Miura-ori origami structure that, in a folded or at least partially folded configuration, is able to conform to complex curved surfaces. The Miura-ori structure involves folding a two-dimensional substrate in accordance with crease lines comprising a tessellation of parallelograms. Each cell of the tessellation pattern can include one or more luminous elements (LEDs, OLEDs, etc.) bonded to circuit elements embedded within the flexible substrate (e.g., Parylene-C).

Abstract: The flexible dye-sensitized solar panel with an organic chromophore is formed from an organic chromophore dye in a polymer matrix. The organic chromophore dye is extracted from chard (B. vulgaris subsp. cicla). The polymer matrix may be formed from either poly(vinyl alcohol) or polystyrene. The flexible dye-sensitized solar panel with an organic chromophore is made by preparing a solution of the selected polymer in the dye extracted from the B. vulgaris subsp. cicla. The solution is coated on a glass plate and dried to form a thin film. The thin flexible film is removed from the plate, forming the flexible dye-sensitized solar panel with an organic chromophore.

Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other and a light-absorption layer between the first electrode and the second electrode and including a first region closest to the first electrode, the first region having a first composition ratio (p1/n1) of a p-type semiconductor relative to an n-type semiconductor, a second region closest to the second electrode, the second region having a second composition ratio (p2/n2) of the p-type semiconductor relative to the n-type semiconductor, and a third region between the first region and the second region in a thickness direction, the third region having a third composition ratio (p3/n3) of the p-type semiconductor relative to the n-type semiconductor that is greater or less than the first composition ratio (p1/n1) and the second composition ratio (p2/n2).

Abstract: An organometallic compound and an organic light-emitting device including the same are provided. The organometallic compound is represented by Formula 1: M(LA)n1(LB)n2.

Abstract: Provided is a solar cell module including photoelectric conversion elements, wherein each of the photoelectric conversion elements includes a first substrate, and a first electrode, a hole blocking layer, an electron transport layer, a hole transport layer, a second electrode, and a second substrate on the first substrate, and a sealing member between the first substrate and the second substrate, and wherein, within at least two of the photoelectric conversion elements adjacent to each other, the hole-blocking layers are not extended to each other but the hole transport layers are in a state of a continuous layer where the hole transport layers are extended to each other.

Abstract: A transparent electrode with a transparent substrate and a composite layer disposed thereon, wherein the composite layer includes a graphene layer and a plurality of nanoparticles, wherein the nanoparticles are embedded in the graphene layer and extend through a thickness of the graphene layer, and wherein the plurality of nanoparticles are in direct contact with the transparent substrate and a gap is present between the graphene layer and the transparent substrate.

Abstract: According to the present disclosure, techniques related to manufacturing and applications of power photodiode structures and devices based on group-III metal nitride and gallium-based substrates are provided. More specifically, embodiments of the disclosure include techniques for fabricating photodiode devices comprising one or more of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, structures and devices. Such structures or devices can be used for a variety of applications including optoelectronic devices, photodiodes, power-over-fiber receivers, and others.

Abstract: A method is provided that integrates an autonomous energy harvesting capacity in a mobile device in an aesthetically neutral manner. A unique set of structural features combine to implement a hidden energy harvesting system on a surface of the mobile device body structure or casing to provide electrical power to the mobile device, and/or to individually electrically-powered components in the mobile device. Color-matched, image-matched and/or texture-matched optical layers are formed over energy harvesting components, including photovoltaic energy collecting components. Optical layers are tuned to scatter selectable wavelengths of electromagnetic energy back in an incident direction while allowing remaining wavelengths of electromagnetic energy to pass through the layers to the energy collecting components below. The layers appear opaque when observed from a light incident side, while allowing at least 50%, and as much as 80+%, of the energy impinging on the energy or incident side to pass through the layer.

Abstract: Provided is a heterofullerene where n number (where n is a positive even number) of carbon atoms constituting a fullerene are substituted by n number of boron atoms or n number of nitrogen atoms.

Abstract: There is provided a multi junction photovoltaic device comprising a first sub-cell comprising a photoactive region comprising a layer of perovskite material, a second sub-cell comprising a photoactive silicon absorber. and an intermediate region disposed between and connecting the first sub-cell and the second sub-cell. The intermediate region comprises an interconnect layer, the interconnect layer comprising a two-phase material comprising elongate (i.e. filament like) silicon nanocrystals embedded in a silicon oxide matrix.

Abstract: A system can comprise a first window pane configured at a first position in a semitransparent and uniform structure. The system can also include a first substrate configured with a first transparent conductive oxide (TCO) contact layer, a hole transport (HTL) layer and a first perovskite layer, wherein the first TCO contact layer, the HTL layer, and first perovskite layer are positioned at a set distance away from the first window pane in the semitransparent and uniform structure. The HTL layer includes oxides, or iodides, or organic materials. Further, the system can include a second substrate directly opposite to the first substrate, and configured with a second TCO contact layer, an electron transport (ETL) layer, and a second perovskite layer, wherein the first perovskite layer and the second perovskite layer are fused together in the semitransparent and uniform structure. The ETL layer includes oxides or organic materials.

Abstract: The invention provides a titanium carbide nanosheet/layered indium sulfide heterojunction and an application of the same in degrading and removing water pollutants. A simple electrostatic self-assembly method is used to uniformly absorb indium ions on the surfaces of Ti3C2 nanosheets, which effectively inhibits the stacking of the nanosheets and is beneficial to the uniform growth of In2S3 nanosheets on the surfaces of the Ti3C2. The present invent overcomes two disadvantages of too fast photogenerated carrier recombination rate of In2S3 and easy agglomeration of nano-scale In2S3, and effectively improves the separation efficiency and photocatalytic activity of photogenerated electron-hole of In2S3.

Abstract: A new and useful p-type oxide semiconductor with a wide band gap and an enhanced electrical conductivity and the method of manufacturing the p-type oxide semiconductor are provided. A method of manufacturing a p-type oxide semiconductor including: generating atomized droplets by atomizing a raw material solution containing at least a d-block metal in the periodic table and a metal of Group 13 of the periodic table; carrying the atomized droplets onto a surface of a base by using a carrier gas; causing a thermal reaction of the atomized droplets adjacent to the surface of the base under an atmosphere of oxygen to form the p-type oxide semiconductor on the base.