Manganese Base Patents (Class 148/314)
  • Patent number: 8999233
    Abstract: Nanostructured Mn—Al, Mn—Al—C permanent magnets are disclosed. The magnets have high coercivities (about 4.8 kOe and 5.2 kOe) and high magnetization values. An intennetallic composition includes a ternary transition metal modified manganese aluminum alloy Mn—Al—Fe, Mn—Al—Ni, or Mn—Al—Co having at least about 80% of a magnetic ? phase and permanent magnetic properties. The alloy may have a saturation magnetization value of at least 96 emu/g with approximately 5% ternary transition metal replacing Al. The alloy may also have a saturation magnetization value of at least 105 emu/g with 10% ternary transition metal replacing Al.
    Type: Grant
    Filed: December 16, 2011
    Date of Patent: April 7, 2015
    Assignee: The Trustees of Dartmouth College
    Inventor: Ian Baker
  • Patent number: 8424314
    Abstract: The present invention relates to new intermetallic compounds having a crystalline structure of Ni3Sn2 type for the magnetic refrigeration, their use and a process for preparing the same. The present invention further relates to new magnetocaloric compositions for the magnetic refrigeration and their use.
    Type: Grant
    Filed: March 27, 2009
    Date of Patent: April 23, 2013
    Assignee: Universite Henri Poincare Nancy 1
    Inventor: Thomas Mazet
  • Patent number: 8293030
    Abstract: The present invention relates to new intermetallic compounds having a crystalline structure of Ni3Sn2 type for the magnetic refrigeration, their use and a process for preparing the same. The present invention further relates to new magnetocaloric compositions for the magnetic refrigeration and their use.
    Type: Grant
    Filed: March 31, 2008
    Date of Patent: October 23, 2012
    Assignee: Universite de Lorraine
    Inventor: Thomas Mazet
  • Publication number: 20120234136
    Abstract: This invention relates to Mn—Al magnetic powders of a high coercive force which are obtained from Mn—Al alloy vaporized by plasma arc discharging, and a manufacturing method thereof. The Mn—Al magnetic powders are produced by discharging a plasma arc to a compact which is formed by compacting a blend containing 20-60% by weight of Mn powder and 40-80% by weight of Al powder, collecting nanoscale Mn—Al particles after cooling the vaporized blend, and heat-treating the particles. According to the present invention, the Mn—Al magnetic powders of light weight and enhanced corrosion resistance are produced at a low cost.
    Type: Application
    Filed: November 10, 2009
    Publication date: September 20, 2012
    Applicant: KOREA INSTITUTE OF MACHINERY & MATERIALS
    Inventors: Jung-Goo Lee, Chul-Jin Choi
  • Publication number: 20100218858
    Abstract: Nanostructured Mn—Al and Mn—Al—C permanent magnets are disclosed. The magnets have high coercivities (˜4.8 kOe and 5.2 kOe, respectively) and high saturation magnetization values. The magnets are prepared from cost effective and readily available elements using a novel mechanical milling and annealing method.
    Type: Application
    Filed: October 27, 2006
    Publication date: September 2, 2010
    Inventors: Ian Baker, Qi Zeng
  • Patent number: 6270593
    Abstract: Mn alloy materials for magnetic materials contain 500 ppm or less, preferably 100 ppm or less, oxygen, 100 ppm or less, probably 20 ppm or less, sulfur, and preferably a total of 1000 ppm or less, more preferably 500 ppm or less, impurities (elements other than Mn and the alloying component). The alloying component that forms an alloy with Mn is one or two or more elements selected from the group consisting of Fe, Ir, Pt, pd, Rh, Ru, Ni, Cr and Co. Sputtering targets formed from the Mn alloy materials for use in depositing magnetic thin film, and the thin films so produced.
    Type: Grant
    Filed: July 28, 1998
    Date of Patent: August 7, 2001
    Assignee: Japan Energy Corporation
    Inventors: Yuichiro Shindo, Tsuneo Suzuki
  • Patent number: 6165607
    Abstract: A sputtering target consisting essentially of Mn and at least one kind of R element selected from a group of Ni, Pd, Pt, Co, Rh, Ir, V, Nb, Ta, Cu, Ag, Au, Ru, Os, Cr, Mo, W, and Re. The sputtering target, at least as a part of target texture, comprises one member selected from a group of an alloy phase and a compound phase formed between the R element and Mn. In addition, oxygen content in the target is 1 weight % or less (including 0). With such a sputtering target, an anti-ferromagnetic material film consisting of RMn alloy excellent in corrosion resistivity and thermal performance can be stabilized in its film composition and film quality. By employing the anti-ferromagnetic material film, when an exchange coupling film is formed by stacking the anti-ferromagnetic material film and the ferromagnetic material film, sufficient exchange coupling force is obtained stably. Such an exchange coupling film can be used in a magneto-resistance effect element and the like.
    Type: Grant
    Filed: July 17, 1998
    Date of Patent: December 26, 2000
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Takashi Yamanobe, Naomi Fujioka, Takashi Ishigami, Nobuo Katsui, Hiromi Fuke, Kazuhiro Saito, Hitoshi Iwasaki, Masashi Sahashi, Takashi Watanabe
  • Patent number: 6143096
    Abstract: A powdery alloy mainly composed of Mn--Bi having particle diameter of 5 .mu.m or less which has a magnetic anisotropy of 6000 Oe or more in coercive force and 35 emu/g or more in saturation magnetization, wherein the size of crystallite according to Scheler's formula is 700 .ANG. or less; and an alloy containing sheet of 0.5 to 10 .mu.m thickness in which a powdery alloy mainly composed of Mn--Bi having particle diameter of 5 .mu.m or less which has a magnetic anisotropy of 6000 Oe or more in coercive force and 35 emu/g or more in saturation magnetization is bound with a binder into a sheet of 0.5 to 10 .mu.m thickness in a state magnetically oriented toward said direction of magnetic anisotropy, wherein when said sheet is measured toward said magnetic anisotropy direction at 16 kOe and 5 kOe, the ratio of residual magnetic flux density Mr16k and Mr5k (Mr5k/Mr16k) is 0.85 or more.
    Type: Grant
    Filed: March 4, 1997
    Date of Patent: November 7, 2000
    Assignee: Hitachi Maxell, Ltd.
    Inventors: Shinichi Kitahata, Hisao Kanzaki
  • Patent number: 5648160
    Abstract: A magnetic powder containing MnBi, in which an average particle size of the magnetic powder is from 0.1 .mu.m to 20 .mu.m; a coercive force is from 3000 to 15,000 Oe at 300 K. and 50 to 1000 Oe at 80 K. when measured with applying a magnetic field of 16 KOe; an amount of magnetization is from 20 emu/g to 60 emu/g when measured at 300 K. with applying a magnetic field of 16 KOe; a degree of decrease of an amount of magnetization is 40% or less after being maintained in an atmosphere of 60.degree. C. and 90% RH for 7 days; and a content of metal bismuth (Bi) satisfies the following equation: Metal Bi/(MnBi+metal Bi)<0.
    Type: Grant
    Filed: March 14, 1996
    Date of Patent: July 15, 1997
    Assignee: Hitachi Maxell, Ltd.
    Inventors: Mikio Kishimoto, Shinichi Kitahata, Hisao Kanzaki, Noriaki Ohtani, Toshinobu Sueyoshi
  • Patent number: 5114669
    Abstract: A ferromagnetic material having the formula MGa.sub.2-x As.sub.x where 0.15.ltoreq.x.ltoreq.0.99 and M represents one of Fe.sub.3, Fe.sub.3 partially substituted by manganese or Fe.sub.3 partially substituted by cobalt.
    Type: Grant
    Filed: December 13, 1990
    Date of Patent: May 19, 1992
    Assignee: The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Northern Ireland
    Inventors: Brian Cockayne, William R. MacEwan, Ivor R. Harris, Nigel A. Smith
  • Patent number: 5049209
    Abstract: The disclosed magnetic nitride T-M-N film (T is at least one metal selected from the group consisting of Fe, Co, Ni and Mn; M is at least one metal selected from the group consisting of Nb, Zr, Ti, Ta, Hf, Cr, W and Mo; N is nitrogen (N)) has excellent wear resistance and high electric resistivity, and the compositionally modulated nitride film shows a soft magnetic property, as well as thermal stability of the properties.
    Type: Grant
    Filed: December 7, 1989
    Date of Patent: September 17, 1991
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Hiroshi Sakakima, Koichi Osano, Yuji Omata, Mitsuo Satomi, Koichi Kugimiya
  • Patent number: 4929275
    Abstract: This invention relates to novel permanent magnet alloy compositions and high energy permanent magnets comprising from about 0.5 to about 27 atomic percent R wherein R is at least one rare earth element including Y and Sc, from about 0.1 to about 53 atomic percent A wherein A is at least one actinide element, and the balance being at least one metal wherein at least about 50 weight percent of the balance is at least one metal selected from the group consisting of Fe, Co, Ni, and Mn. Preferably, R is from about 12 to about 18 atomic percent and R is a rare earth element selected from the group consisting of Sm, Nd, Pr, and Dy. It is also preferred that A is from about 1.5 to about 5.1 atomic percent and A is an actinide element selected from the group consisting of Ac, Th, Pa and U. The balance is preferably at least about 90 weight percent of Fe and/or Co, and further comprises from about 0.1 to about 10 weight percent of Zr and/or Cu.
    Type: Grant
    Filed: May 30, 1989
    Date of Patent: May 29, 1990
    Assignee: SPS Technologies, Inc.
    Inventor: Yakov Bogatin
  • Patent number: 4836865
    Abstract: The disclosed magnetic nitride T-M-N film (T is at least one metal selected from the group consisting of Fe, Co, Ni and Mn; M is at least one metal selected from the group consisting of Nb, Zr, Ti, Ta, Hf, Cr, W and Mo; N is nitrogen (N)) has excellent wear resistance and high electric resistivity, and the compositionally modulated nitride film shows a soft magnetic property, as well as thermal stability of the properties.
    Type: Grant
    Filed: March 10, 1987
    Date of Patent: June 6, 1989
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Hiroshi Sakakima, Koichi Osano, Yuji Omata, Mitsuo Satomi, Koichi Kugimiya
  • Patent number: 4778541
    Abstract: Directional solidification of Bi and Mn compositions to produce magnetic single domain size MnBi particles with aligned morphologies.
    Type: Grant
    Filed: November 20, 1987
    Date of Patent: October 18, 1988
    Assignee: Grumman Aerospace Corporation
    Inventors: Ronald G. Pirich, David J. Larson, Jr.
  • Patent number: 4648915
    Abstract: A billet made of a polycrystalline Mn-Al-C alloy magnet which is obtained by plastically deforming a Mn-Al-C alloy for magnet such as by extrusion at a temperature of 530.degree. to 830.degree. C. is used for compressive working. When the billet is hollow, it is entirely or locally compressed along the axis of the hollow billet. On the other hand, when the billet is solid, an outer circumferential portion of the billet is compressed. By the compression, the anisotropic structure of the portion where compressed is changed into an anisotropic structure having a direction of easy magnetization in radial directions. The magnet obtained by the method is also disclosed. The magnet has a radially anisotropic structure or novel structures having two different types of anisotropies therein.
    Type: Grant
    Filed: September 30, 1985
    Date of Patent: March 10, 1987
    Assignee: Matsushita Electric Industrial Company, Ltd.
    Inventors: Akihiko Ibata, Yoichi Sakamoto
  • Patent number: 4623404
    Abstract: Anisotropic Mn-Al-C alloy magnets exhibiting excellent magnetic characteristics in multipolar magnetization are described. The magnets are obtained by subjecting a polycrystalline Mn-Al-C alloy magnet, which is rendered anisotropic, to compressive working or extrusion at a temperature of from 530.degree. to 830.degree. C. while keeping restrained at least part of the hollow billet along its length so that the at least part is prevented from suffering compressive deformation until fed into a compressive working region. Permanent magnets obtained by the method are also described.
    Type: Grant
    Filed: April 18, 1983
    Date of Patent: November 18, 1986
    Assignee: Matsushita Electric Industrial Company, Limited
    Inventors: Akihiko Ibata, Yoichi Sakamoto