Abstract: Provided is a tantalum sputtering target that contributes to improvement of film thickness uniformity during a high-power sputtering. A tantalum sputtering target having a purity of 99.99% by mass or more and an average value of Vickers hardness on a sputtering surface of from 85 to 110 Hv, the tantalum sputtering target satisfying both of the following conditions (1) and (2): (1) when a cross section perpendicular to the sputtering surface is measured by EBSP, an average value of Kernel Average Misorientation values (KAM values) is from 0.2° to 2.8°; and (2) when a cross section perpendicular to the sputtering surface is measured by EBSP, an average value of orientation area ratios of a {100} plane oriented at a misorientation of within 15° relative to a normal direction of the sputtering surface is 20% or more.

Abstract: An improved capacitor, and method of manufacturing the improved capacitor, is provided. The method includes deoxygenating and leaching the anode wire to produce a capacitor comprising an anode having a surface area of at least 4.0 m2/g or a charge density of at least 200,000 CV/g with the anode wire having an equivalent diameter of less than 0.30 mm extending from said anode. A dielectric is on the anode and a cathode is on the dielectric.

Abstract: Provided is a tantalum target, wherein, when a direction normal to a rolling surface (ND), which is a cross section perpendicular to a sputtering surface of a target, is observed via an electron backscatter diffraction pattern method, an area ratio of crystal grains of which a {100} plane is oriented in the ND is 30% or more. An object of the present invention is to provide a tantalum sputtering target in which a deposition rate can be appropriately controlled under high-power sputtering conditions. When sputter-deposition is performed using this kind of a tantalum target, it is possible to form a thin film having superior film thickness uniformity and improve the productivity of the thin film formation process, even for micro wiring.

Abstract: A tantalum sputtering target containing niobium and tungsten as essential components in a total amount of 1 massppm or more and less than 10 massppm, and having a purity of 99.9999% or higher excluding niobium, tungsten and gas components. Provided is a high purity tantalum sputtering target comprising a uniform and fine structure which is adjusted to be within an optimal range and which enables deposition of a uniform film at a high deposition rate in a stable manner.

Abstract: A target is formed of a sintering-resistant material of high-melting point metal alloy, high-melting point metal silicide, high-melting point metal carbide, high-melting point metal nitride or high-melting point metal boride comprising a structure in which a material formed of a sintering-resistant material of high-melting point metal alloy, high-melting point metal silicide, high-melting point metal carbide, high-melting point metal nitride or high-melting point metal boride and a high-melting point metal plate other than the target are bonded. A production method of such a target is provided. Further the generation of cracks during the target production and high power sputtering, and the reaction of the target raw material with the die during hot pressing can be inhibited effectively, and the warpage of the target can be reduced.

Abstract: A wet electrolytic capacitor containing a cathode, fluidic working electrolyte, and planar anode formed from an anodically oxidized sintered porous pellet is provided. The pellet may be formed from a pressed valve metal powder, which in turn, is formed by reacting an oxide of a valve metal compound (e.g., tantalum pentoxide) with a reducing agent that contains a metal having an oxidation state of 2 or more (e.g., magnesium). Through the use of such a powder, the present inventors have discovered that higher capacitance levels can be achieved than previously thought possible for the high voltage capacitors employed in implantable medical devices.

Abstract: A first multi phase niobium silicide alloy composition consists essentially of: from 15 to 24 at % of Si; from 0 to 25 at % of one or more sp outer electron configuration element which is not Si; from 1 to 26 at % of one or more sd outer electron configuration element which is not Nb; and a balance of Nb, interstitials and impurities. This alloy may be used to increase the creep resistance of an article, for example a gas turbine engine blade. A second multi phase niobium silicide alloy composition consists essentially of: from 1 to 24 at % of Si; from 0 to 34 at % of one or more sp outer electron configuration element which is not Si; from 19.5 to 48.5 at % of one or more sd outer electron configuration element which is not Nb or Cr; from 0.5 to 9 at % Cr; and a balance of Nb, interstitials and impurities. This alloy may be used to increase the creep resistance and/or to increase the oxidation resistance of an article, for example a gas turbine engine blade.

Abstract: A hybrid compressor blade having an airfoil portion and a root portion that includes an outer shell comprised of one or multiple types of material that are each located at a predesignated section on the compressor blade, having at least one transition region between two different sections. The transition region is comprised of one or multiple layers with a compositional gradient based upon materials in the neighboring sections to provide a gradual transition from one section to another.

Abstract: A method of making metal articles as well as sputtering targets is described, which involves deforming an ingot to preferred dimensions. In addition, products made by the process of the present invention are further described.

Abstract: Zirconium-based metal alloy compositions comprise zirconium, a first additive in which the permeability of hydrogen decreases with increasing temperatures at least over a temperature range extending from 350° C. to 750° C., and a second additive having a solubility in zirconium over the temperature range extending from 350° C. to 750° C. At least one of a solubility of the first additive in the second additive over the temperature range extending from 350° C. to 750° C. and a solubility of the second additive in the first additive over the temperature range extending from 350° C. to 750° C. is higher than the solubility of the second additive in zirconium over the temperature range extending from 350° C. to 750° C. Nuclear fuel rods include a cladding material comprising such metal alloy compositions, and nuclear reactors include such fuel rods. Methods are used to fabricate such zirconium-based metal alloy compositions.

Abstract: In one embodiment, a method for manufacturing a tantalum sputtering target includes a first knead forging step, a first heating step, a second knead forging step, a cold rolling step, and a second heating step. In the first knead forging step, a tantalum material is subjected to two sets or more of knead forging, each of the sets being cold forging in directions parallel to and perpendicular to a thickness direction. In the second knead forging step, one set or more of knead forging is performed after the first heating step, each of the steps being cold forging in the directions parallel to and perpendicular to the thickness direction.

Abstract: A method for passivating a biomaterial surface includes exposing the biomaterial surface to therapeutic electrical energy in the presence of blood or plasma. The biomaterial surface may be removably secured within a chamber of a treatment system, which communicates the therapeutic electrical energy to the biomaterial surface while interfacing the biomaterial surface with blood or plasma.

Abstract: A method of making sputter targets using rotary axial forging is described. Other thermomechanical working steps can be used prior to and/or after the forging step. Sputter targets are further described which can have unique grain size and/or crystal structures.

Abstract: Provided is a tantalum or a tantalum alloy target capable of shortening the burn-in time and minimizing the fluctuation in the deposition speed throughout the target life, whereby the production efficiency of semiconductors in the sputtering process can be improved and stabilized, and the production cost can be significantly reduced. With tantalum or tantalum-based alloy sputtering target, provided is a sputtering target, wherein FWHM (full width of half maximum) of a {200} crystal plane measured by X-ray diffraction of the sputtered outermost surface is 0.1 to 0.6°, and wherein the variation of FWHM is within ±0.05°.

Abstract: The present invention relates to a medical device or implant made at least in part of a high-strength, low-modulus metal alloy comprising niobium, tantalum, and at least one element selected from the group consisting of zirconium, tungsten, and molybdenum. The medical devices according to the present invention provide superior characteristics with regard to biocompatibility, radio-opacity and MRI compatibility.

Abstract: A process for providing a niobium wire and its use for connection to niobium or niobium oxide capacitors. The wire is enriched with oxygen and preferably has oxygen concentrations of about 3,000 to 30,000 ?g/g.

Abstract: A method of making sputter targets using rotary axial forging is described. Other thermomechanical working steps can be used prior to and/or after the forging step. Sputter targets are further described which can have unique grain size and/or crystal structures.

Abstract: Extruded tantalum billets and niobium billets are described having a substantially uniform grain size and preferably an average grain size of about 150 microns or less and more preferably an average grain size of about 100 microns or less. The extruded billet can then be forged or processed by other conventional techniques to form end use products such as sputtering targets. A process for making the extruded tantalum billets or niobium billets is also described and involves extruding a starting billet at a sufficient temperature and for a sufficient time to at least partially recrystallize the billet and form the extruded billet of the present invention.

Abstract: A process is described for processing metal which includes clock rolling a metal plate until the desired thickness is achieved to form a rolled plate. Sputtering targets and other metal articles are further described.

Abstract: Disclosed is a hydrogen separation alloy which is adoptable to a product having a large surface area of a side where hydrogen permeates and which has such a metallographic structure as to improve hydrogen permeability and to improve hydrogen-embrittlement resistance. The hydrogen separation alloy used herein is represented by the compositional formula: Nb100?(?+?)M1?M2? where M1 is at least one element selected from the group consisting of Ti, Zr and Hf; M2 is at least one element selected from the group consisting of Ni, Co, Cr, Fe, Cu and Zn; 10???60, 10???50, and ?+??80. The alloy contains inevitable impurities. And the alloy includes two phases, i.e., an Nb-M1 phase serving as a hydrogen-permeable phase, and a M2-M1 phase serving as a hydrogen-embrittlement-resistant phase. The hydrogen-permeable phase and the hydrogen-embrittlement-resistant phase have an elongated structure resulting from rolling.

Abstract: Provided is a sputtering target in which the ratio of X-ray intensity of (110) measured with X-ray diffraction is 0.4 or less, and even 0.2 or less in a Ta or Ta alloy target. Further provided is a sputtering target in which the ratio of X-ray intensity of (110) on a Ta or Ta alloy target surface measured with X-ray diffraction is 0.8 or less, and the ratio of the foregoing X-ray intensity at a depth of 100 ?m or deeper is 0.4 or less. This Ta or Ta alloy target is capable of minimizing the fluctuation of the deposition speed for each target throughout the target life of a sputtering target, and thereby improving and stabilizing the production efficiency of semiconductors during the sputtering process, and contributing to the reduction of production costs.

Abstract: Provided is a tantalum sputtering target manufactured by working a molten and cast tantalum ingot or billet through forging, annealing and rolling, wherein the structure of the tantalum target comprises a non-recrystallized structure. The tantalum sputtering target having a high deposition speed and excellent uniformity of film, producing less arcings and particles and having excellent film forming properties, and the method capable of stably manufacturing the target can be provided by improving and devising plastic working steps such as forging and rolling, and the heat treatment step.

Abstract: Niobium cavities are fabricated by the drawing and ironing of as cast niobium ingot slices rather than from cold rolled niobium sheet. This method results in the production of niobium cavities having a minimum of grain boundaries at a significantly reduced cost as compared to the production of such structures from cold rolled sheet.

Abstract: A laminated structure by internal oxidation includes an alloy coating layer structured as columnar grains. The alloy coating layer includes a first metal element and a second metal element, wherein the first metal element is oxidized more easily than the second metal element. The surface layer portion of the alloy coating layer has a plurality of oxide layers and a plurality of metal layers stacked alternately with each other. The material of the oxide layers includes the oxide of the first metal element and the material of the metal layers includes the second metal element.

Abstract: A Titanium-Tantalum base shape memory alloy is provided which possesses high machinability and is suitable for repeated high temperature operation. The Titanium-Tantalum base shape memory alloy consists of 15 mol %-40 mol % Tantalum, additive elements, and the balance Titanium and impurities.

Abstract: A process is described for processing metal which includes clock rolling a metal plate until the desired thickness is achieved to form a rolled plate. Sputtering targets and other metal articles are further described.

Abstract: Coatings suitable for use as protective oxide-forming coatings on Nb-based substrates exposed to high temperatures and oxidative environments. The coatings contain chromium and/or molybdenum, preferably contains silicon, and optionally contains niobium, titanium, hafnium, iron, rhenium, tantalum, and/or tungsten, which in combination form multiple intermetallic phases, which in combination form one or more intermetallic phases that promote the formation of a slow-growing oxide scale. Depending on the particular coating composition, the intermetallic phases may be: a silicon-modified Cr2Nb Laves phase and optionally a chromium solid solution phase, a CrNbSi intermetallic phase, and/or an M3Si intermetallic phase where M is niobium, titanium, and/or chromium; or M5Si3, MSi2 and/or M3Si2 where M is molybdenum, niobium, titanium, chromium, hafnium, iron, rhenium, tantalum, and/or tungsten.

Abstract: A tantalum sputtering target, wherein when the sum of the overall crystalline orientation is 1 on a tantalum target surface, the area ratio of crystals having any orientation among (100), (111), (110) does not exceed 0.5. Thus, obtained is a tantalum sputtering target having superior deposition properties where the deposition speed is high, film evenness (uniformity) is superior, and generation of arcings or particles is reduced.

Abstract: Process for the production of valve metal powders, in particular niobium and tantalum powder, by reduction of corresponding valve metal oxide powders by means of vaporous reducing metals and/or hydrides thereof, preferably in the presence of an inert carrier gas, wherein the reduction is performed at a vapor partial pressure of the reducing metal/metal hydride of 5 to 110 hPa and an overall pressure of less than 1000 hPa, and tantalum powder obtainable in this way having a high stability of the powder agglomerate particles.

Abstract: Metals for use in glass-making furnaces and which are susceptible to oxidation at furnace operating temperatures, especially iridium or molybdenum, are protected by applying at least (200) microns thickness of a coating formed of metal oxide particles in a metal oxide matrix. Oxidation, measured by weight loss, is significantly reduced.

Abstract: Provided is a tantalum sputtering target having a crystal structure in which the (222) orientation is preferential from a position 10% of the target thickness toward the center face of the target, and a manufacturing method of a tantalum sputtering target, including the steps of forging and recrystallization annealing, and thereafter rolling, a tantalum ingot or billet having been subject to melting and casting, and forming a crystal structure in which the (222) orientation is preferential from a position of 10% of the target thickness toward the center face of the target. As a result, evenness (uniformity) of the film is enhanced, and quality of the sputter deposition is improved.

Abstract: A highly heat resistant wire based on niobium or tantalum or niobium tantalum alloy for single-side socket lamps is enriched, according to the invention, with phosphorus and converted into an annealed state. The wire exhibits a yield strength Rp 0.2 of at least 200 MPa or a tensile strength Rm of at least 300 MPa. For the production of a frame for single-side socket lamps, a metal based on niobium or tantalum or an alloy thereof is doped with phosphorus and the doped metal is cold shaped into a wire, this wire is annealed and formed into a frame. This frame is used for the simultaneous current supply and holding of a burner in a single-side socket lamp.

Abstract: A refractory composition is described, containing niobium, silicon, titanium, and at least one of rhenium and ruthenium. The amount of silicon in the composition is at least about 9 atom %, and the amount of titanium present is less than about 26 atom %, based on total atomic percent. Turbine engine components formed from such a composition are also disclosed.

Abstract: High purity refractory metals, valve metals, refractory metal oxides, valve metal oxides, or alloys thereof suitable for a variety of electrical, optical and mill product/fabricated parts usages are produced from their respective oxides by metalothermic reduction of a solid or liquid form of such oxide using a reducing agent that establishes (after ignition) a highly exothermic reaction, the reaction preferably taking place in a continuously or step-wise moving oxide such as gravity fall with metal retrievable at the bottom and an oxide of the reducing agent being removable as a gas or in other convenient form and unreacted reducing agent derivatives being removable by leaching or like process.

Abstract: Niobium alloy compositions and systems comprising the niobium alloy composition are provided. The niobium alloy compositions comprises between about 10 atomic % and about 30 atomic % of titanium, between about 7 atomic % and about 20 atomic % of silicon, between about 5 atomic % and about 20 atomic % of molybdenum, between about 2 atomic % and about 10 atomic % of chromium, between about 2 atomic % and about 10 atomic % of aluminum, between about 3 atomic % and about 7 atomic % of zirconium, between about 1 atomic % and about 7 atomic % of carbon, between about 1 atomic % and about 6 atomic % of hafnium, and niobium.

Abstract: High purity tantalum metals and alloys containing the same are described. The tantalum metal preferably has a purity of at least 99.995% and more preferably at least 99.999%. In addition, tantalum metal and alloys thereof are described, which either have a grain size of about 50 microns or less, or a texture in which a (100) intensity within any 5% increment of thickness is less than about 15 random, or an incremental log ratio of (111):(100) intensity of greater than about ?4.0, or any combination of these properties. Also described are articles and components made from the tantalum metal which include, but are not limited to, sputtering targets, capacitor cans, resistive film layers, wire, and the like. Also disclosed is a process for making the high purity metal which includes the step of reacting a salt-containing tantalum with at least one compound capable of reducing this salt to tantalum powder and a second salt in a reaction container.

Abstract: A metal film according to the present invention has a cubic crystal structure having a periodic pattern of crystal orientation in a plane. The crystal orientation is gradually rotated about a particular crystal-axis direction such that a {100} plane, a {110} plane, and a {111} plane appear.

Abstract: A method for non-destructively detecting the presence of banded regions in a metal is described. The method involves sending an ultrasonic wave into the metal and obtaining reflected signals. The reflected signals are compared with each other to determine variations in signal intensity. A banded region within the metal can be observed as a weaker reflected signal than a reflected backwall signal, thus accurately identifying a location of banding within the metal. Metal articles with a low percent of banding are also described.

Abstract: A (Nb, Ti) phase in an Nb—Ti—Co alloy is composed of a granular structure. The Nb—Ti—Co alloy is preferably subjected to heat treatment at 800° C. or more so that the eutectic structure in the casted state can be changed to a granular structure. The Nb—Ti—Co alloy used there is preferably NbxTi(100-x-y)Coy, (x?70, 20?y?50 (mol %)). By properly predetermining the heating temperature and time, the resulting alloy exhibits improved hydrogen permeability in combination with a good hydrogen embrittlement resistance characteristic in the CoTi phase, making it possible to provide a practical hydrogen permeable membrane having an advantageously high performance.

Abstract: Extruded tantalum billets and niobium billets are described having a substantially uniform grain size and preferably an average grain size of about 150 microns or less and more preferably an average grain size of about 100 microns or less. The extruded billet can then be forged or processed by other conventional techniques to form end use products such as sputtering targets. A process for making the extruded tantalum billets or niobium billets is also described and involves extruding a starting billet at a sufficient temperature and for a sufficient time to at least partially recrystallize the billet and form the extruded billet of the present invention.

Abstract: A valve metal powder by is prepared by a particular set of sequential steps that involves the use of precursor having preformed morphology. The method by which the valve metal is prepared includes a stabilization step that results in the valve metal powder having secondary and tertiary structures that each corresponds to the secondary and tertiary structures of the precursor. Also described is a method of producing solid electrolyte capacitors that include the valve metal powder of the present invention.

Abstract: A braze material and method of brazing titanium metals. The material may consist of Ti, Ni, Cu Zr, PM and M where PM is a precious metal and M may be Fe, V, Cr, Co, Mo, Nb, Mn, Si, Sn, Al, B, Gd, Ge or combinations thereof, with the (Cu+PM)/Ni ratio around 0.9. Optionally, a second brazing may be performed to rebraze any braze joint that did not braze successfully. The second brazing material has a lower braze temperature than the first and may consist of a mixture of Ti, Ni, Cu, Zr PM and M with from 1-20 wt % more Zr, PM, M or combinations thereof than the first braze. The braze material may be placed on a base material, in a vacuum furnace, and heated to form a braze joint between the braze and base material. The heating step may occur from about 800-975° C. and over 3 to 15 minutes.

Abstract: Niobium silicide articles are described. They include a surface region enriched with at least about 25 atom % germanium, which can enhance the properties of the article. Methods for preparing these articles are described as well. According to one method, an article is formed from a niobium silicide composite material which contains a selected amount of germanium. The article is then heat-treated under conditions sufficient to increase the level of germanium in the surface region to at least about 25 atom %, based on the total composition of the surface region. In another embodiment, a germanium-containing material is applied over a niobium-silicide article, and then diffused into the surface region of the article by way of a heat treatment.

Abstract: A method of molding an article comprises inserting a mandrel into the cavity of the mold; placing a niobium based refractory metal intermetallic composite powder into a cavity of a mold; consolidating the niobium based refractory metal intermetallic composite around the mandrel; and chemically removing the mandrel from the composite. In one embodiment, the molded article comprises a turbine component for use in a turbine system.

Abstract: A multi-filament superconducting wire in which the filaments comprise zirconia-stabilized ultra-fine grain Nb3Sn. The superconducting wire is formed by wire-drawing a preform comprising a metallic matrix and at least one niobium alloy rod having zirconium and oxygen in solid solution and heat treating the drawn wire in the presence of tin to yield at least one continuous filament comprising ultra-fine grain Nb3Sn having semi-coherent ZrO2 precipitates disposed therein. The ZrO2 precipitates serve to stabilize the ultra-fine grain microstructure of the Nb3Sn at temperatures up to 1100° C. and allows Nb3Sn to maintain the ultra-fine grain microstructure when heat treated at temperatures that are greater than those previously used. By using higher temperatures to form Nb3Sn, the time required for heat treatment can be significantly reduced.

Abstract: A method for producing a Ta sputtering target including the following steps: (a) a step of forging a Ta ingot, comprising subjecting the Ta ingot to a forging pattern over at least 3 times, wherein each forging pattern is “a cold forging step comprising stamp-forging and upset-forging operations alternatively repeated over at least 3 times; (b) an in-process vacuum heat-treating step carried out between every successive two forging patterns to thus prepare a Ta billet; (c) a step of rolling the Ta billet to obtain a rolled plate; and (d) a step of vacuum heat-treating the rolled plate to obtain a Ta sputtering target. A sputtering target produced by the above method.

Abstract: A precursor for manufacturing a Nb3Sn superconducting wire according to the present invention includes a mono-element wire including a Sn or Sn-based alloy core disposed at the, a Cu or Cu-based alloy matrix and a plurality of Nb or Nb-based alloy filaments surrounding the Sn or Sn-based alloy core, and a diffusion barrier layer and a stabilizing copper layer surrounding the Cu or Cu-based alloy matrix. In a final shape after a reduction process, the average diameter of the Nb or Nb-based alloy filaments is set to 5 ?m to 30 ?m, and the average distance between the Sn or Sn-based alloy core and the Nb or Nb-based alloy filaments nearest the Sn or Sn-based alloy core is set to 100 ?m or less.

Abstract: A method of producing a valve metal mill form having dimensions sufficient to be divided to form a plurality of sputter targets is described. The method includes multidirectional deformation of an ingot to form a mill form having a preferred average grain size of about 100 microns or less and/or a texture substantially void of textural bands.

Abstract: A reversible hydrogen storage alloy capable of storing large amounts of hydrogen and delivering reversibly large amounts of hydrogen at temperatures ranging from 0° C. up to 40° C. The hydrogen storage alloy is generally composed of titanium, vanadium, and chromium. The alloy may further include manganese. Modifier elements such as zirconium, iron, nickel, molybdenum, ruthenium, and/or cobalt, and scavenger elements such as misch metal, calcium, and/or magnesium may be included in the alloy to improve performance.

Abstract: The sputter target includes a tantalum body having tantalum grains formed from consolidating tantalum powder and a sputter face. The sputter face has an atom transport direction for transporting tantalum atoms away from the sputter face for coating a substrate. The tantalum grains have at least a 40 percent (222) direction orientation ratio and less than a 15 percent (110) direction orientation ratio in an atom transport direction away from the sputter face for increasing sputtering uniformity, the tantalum body being free of (200)–(222) direction banding detectable by Electron Back-Scattering Diffraction and wherein the sputter target has a purity of at least 99.99 (%) percent.