Vanadium, Niobum, Or Tantalum Base Patents (Class 148/422)
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Patent number: 7073559Abstract: A method of producing metal fibers including melting a mixture of at least a fiber metal and a matrix metal, cooling the mixture to form a bulk matrix comprising at least a fiber phase and a matrix phase and removing at least a substantial portion of the matrix phase from the fiber phase. Additionally, the method may include deforming the bulk matrix. In certain embodiments, the fiber metal may be at least one of niobium, a niobium alloy, tantalum and a tantalum alloy and the matrix metal may be at least one of copper and a copper alloy. The substantial portion of the matrix phase may be removed, in certain embodiments, by dissolving of the matrix phase in a suitable mineral acid, such as, but not limited to, nitric acid, sulfuric acid, hydrochloric acid and phosphoric acid.Type: GrantFiled: July 2, 2003Date of Patent: July 11, 2006Assignee: ATI Properties, Inc.Inventors: Philip M. O'Larey, John J. Hebda, Ronald A. Graham
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Patent number: 7066975Abstract: An object of the present invention is to provide nitrogen-containing metallic powder at high productivity, which powder contains a metal such as niobium or tantalum containing nitrogen uniformly, and enables production of an anode electrode that has high specific capacitance and low leakage current and that exhibits excellent reliability for a prolonged period of time. There is provided nitrogen-containing metallic powder which is a solid solution containing 50–20,000 ppm nitrogen, in which the metal that constitutes the metallic powder is niobium or tantalum. The nitrogen-containing metallic powder is produced through the process in which while a metallic compound is reduced with a reducing agent, a nitrogen-containing gas is introduced into a reaction system to thereby form metal, and nitrogen is simultaneously incorporated into metal.Type: GrantFiled: June 20, 2002Date of Patent: June 27, 2006Assignee: Cabot Supermetals, K.K.Inventors: Yukio Oda, Tomoo Izumi, Yoshikazu Noguchi
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Patent number: 6929726Abstract: A sputtering target consists essentially of 0.1 to 50% by weight of at least one kind of element that forms an intermetallic compound with Al, and the balance of Al. The element that forms an intermetallic compound with Al is uniformly dispersed in the target texture, and in a mapping of EPMA analysis, a portion of which count number of detection sensitivity of the element is 22 or more is less than 60% by area ratio in a measurement area of 20×20 ?m. According to such a sputtering target, even when a sputtering method such as long throw sputtering or reflow sputtering is applied, giant dusts or large concavities can be suppressed in occurrence.Type: GrantFiled: January 8, 2004Date of Patent: August 16, 2005Assignee: Kabushiki Kaisha ToshibaInventors: Koichi Watanabe, Takashi Ishigami
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Patent number: 6923934Abstract: TiAl alloy includes 46 to 50 at % of Al, 5 at % or less of combination of Mo, V and Si, provided that Si content is 0.7 at % or less, and Mo content satisfies an equation of ?0.3x +17.5 at % or less where x represents Al (at %), and the remainder being Ti and inevitable impurities. Mo may be replaced by Fe or combination of Mo and Fe. TiAl alloy is heated to a melt, poured into a mold, and cooled at a rate of 150 to 250° C./min within a temperature range of 1500 to 1100° C. The resulting product can be used as cast. If desired, however, heat treatment such as HIP or homogenization may be performed within a temperature range of 1100 to 800° C. After the heat treatment, the melt is cooled at a rate of 100° C./min or more until room temperature.Type: GrantFiled: August 6, 2002Date of Patent: August 2, 2005Assignee: Ishikawajima-Harima Heavy Industries Co., Ltd.Inventor: Sadao Nishikiori
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Patent number: 6913655Abstract: A niobium-silicide refractory metal intermetallic composite adapted for use in a turbine component. The niobium-silicide refractory metal intermetallic composite comprises: between about 19 atomic percent and about 24 atomic percent titanium; between about 1 atomic percent and about 5 atomic percent hafnium; between about 16 atomic percent and about 22 atomic percent silicon; between about 7 atomic percent and about 14 atomic percent chromium; from about 1.5 atomic percent to about 3 atomic percent tin; and a balance of niobium. The niobium silicide refractory intermetallic composite contains a tetragonal phase, which comprises a volume fraction from 0.35 to 0.5 of the niobium silicide refractory intermetallic composite, and a hexagonal M3Si5 silicide phase (wherein M is at least one of Nb and Hf) which comprises a volume fraction comprises less than 0.25 of the niobium silicide refractory intermetallic composite.Type: GrantFiled: October 3, 2002Date of Patent: July 5, 2005Assignee: General Electric CompanyInventors: Melvin Robert Jackson, Bernard Patrick Bewlay, Ji-Cheng Zhao
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Patent number: 6893513Abstract: High purity tantalum metals and alloys containing the same are described. The tantalum metal preferably has a purity of at least 99.995% and more preferably at least 99.999%. In addition, tantalum metal and alloys thereof are described, which either have a grain size of about 50 microns or less, or a texture in which a (100) intensity within any 5% increment of thickness is less than about 15 random, or an incremental log ratio of (111):(100) intensity of greater than about ?4.0, or any combination of these properties. Also described are articles and components made from the tantalum metal which include, but are not limited to, sputtering targets, capacitor cans, resistive film layers, wire, and the like. Also disclosed is a process for making the high purity metal which includes the step of reacting a salt-containing tantalum with at least one compound capable of reducing this salt to tantalum powder and a second salt in a reaction container.Type: GrantFiled: August 6, 2001Date of Patent: May 17, 2005Assignee: Cabot CorporationInventors: Christopher A. Michaluk, Louis E. Huber, Mark N. Kawchak, James D. Maguire, Jr.
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Patent number: 6863750Abstract: High purity niobium metals and alloys containing the same are described. The niobium metal preferably has a purity of at least 99.99% and more preferably at least 99.999%. In addition, niobium metal and alloys thereof are described, which either have a grain size of about 150 microns or less, or a texture in which a (100) intensity within any 5% increment of thickness is less than about 30 random, or an incremental log ratio of (111):(100) intensity of greater than about ?4.0, or any combination of these properties. Also described are articles and components made from the niobium metal which include, but are not limited to, sputtering targets, capacitor cans, resistive film layers, wire, and the like. Also disclosed is a process for making the high purity niobium metal which includes the step of reacting a salt-containing niobium and a metal salt along with at least one compound capable of reducing the salt-containing niobium to niobium and in a reaction container.Type: GrantFiled: May 21, 2001Date of Patent: March 8, 2005Assignee: Cabot CorporationInventors: Christopher A. Michaluk, Louis E. Huber, Jr.
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Publication number: 20040250924Abstract: The sputter target includes a tantalum body having tantalum grains formed from consolidating tantalum powder and a sputter face. The sputter face has an atom transport direction for transporting tantalum atoms away from the sputter face for coating a substrate. The tantalum grains have at least a 40 percent (222) direction orientation ratio and less than a 15 percent (110) direction orientation ratio in an atom transport direction away from the sputter face for increasing sputtering uniformity, the tantalum body being free of (200)-(222) direction banding detectable by Electron Back-Scattering Diffraction and wherein the sputter target has a purity of at least 99.99 (%) percent.Type: ApplicationFiled: March 26, 2004Publication date: December 16, 2004Inventors: Holger J. Koenigsmann, Paul S. Gilman
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Patent number: 6827828Abstract: The invention includes a method of forming a material which comprises at least two elements. More specifically, the method comprises providing an electrolytic cell comprising a cathode, an anode, and an electrolytic solution extending between the cathode and anode. A metallic product is electrolytically formed within the electrolytic cell. The forming of the metallic product comprises primarily electrorefining of a first element of the at least two elements and primarily electrowinning of a second element of the at least two elements. The invention also includes a mixed metal product comprising at least two elements, such as a product comprising tantalum and titanium.Type: GrantFiled: March 29, 2001Date of Patent: December 7, 2004Assignee: Honeywell International Inc.Inventor: Guangxin Wang
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Patent number: 6770154Abstract: The sputter target includes a tantalum body having tantalum grains formed from consolidating tantalum powder and a sputter face. The sputter face has an atom transport direction for transporting tantalum atoms away from the sputter face for coating a substrate. The tantalum grains have at least a 40 percent (222) direction orientation ratio and less than a 15 percent (110) direction orientation ratio in an atom transport direction away from the sputter face for increasing sputtering uniformity.Type: GrantFiled: September 18, 2001Date of Patent: August 3, 2004Assignee: Praxair S.T. Technology, Inc.Inventors: Holger J. Koenigsmann, Paul S. Gilman
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Patent number: 6767653Abstract: A turbine component comprises a substrate; and a crystalline coating disposed on a surface of the substrate, wherein the crystalline coating comprises tin and yttrium in an amount greater than or equal to about 0.05 atomic percent based upon the total coating. A method of making a turbine component comprises disposing a coating composition on a substrate, wherein the coating composition comprises tin and yttrium in an amount greater than or equal to about 0.1 atomic percent based upon the total coating composition. A crystalline coating comprises tin and yttrium in an amount greater than or equal to about 0.05 atomic percent based upon the total coating.Type: GrantFiled: December 27, 2002Date of Patent: July 27, 2004Assignee: General Electric CompanyInventors: Bernard Bewlay, Melvin Jackson, Ji-Cheng Zhao
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Patent number: 6736947Abstract: A sputtering target consists essentially of 0.1 to 50% by weight of at least one kind of element that forms an intermetallic compound with Al, and the balance of Al. The element that forms an intermetallic compound with Al is uniformly dispersed in the target texture, and in a mapping of EPMA analysis, a portion of which count number of detection sensitivity of the element is 22 or more is less than 60% by area ratio in a measurement area of 20×20 &mgr;m. According to such a sputtering target, even when a sputtering method such as long throw sputtering or reflow sputtering is applied, giant dusts or large concavities can be suppressed in occurrence.Type: GrantFiled: June 23, 2000Date of Patent: May 18, 2004Assignee: Kabushiki Kaisha ToshibaInventors: Koichi Watanabe, Takashi Ishigami
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Publication number: 20040062676Abstract: Alloys for use as stents which consist essentially of niobium (Nb), tantalum (Ta) and zirconium (Zr).Type: ApplicationFiled: May 28, 2003Publication date: April 1, 2004Applicant: W.C. HERAEUS GmbH & CO. KGInventors: Jens Trotzschel, Jurgen Wachter, Frank Kruger, Matthias Frericks
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Patent number: 6690759Abstract: Disclosed herein are zirconium-base alloys excellent in both corrosion resistance and hydrogen absorption property, useful as materials for nuclear reactors. Such a zirconium-base alloy for nuclear reactors comprises 0.5-2 wt. % Sn, 0.07-0.6 wt. % Fe, 0.03-0.2 wt. % Ni, 0.05-0.2 wt. % Cr, and the balance being zirconium and unavoidable impurities, wherein the Fe content (X wt. %) of the zirconium-base alloy and the mean size (Y nm) of precipitates in the zirconium-base alloy are present in a region on the x (Fe content X) and y (mean precipitate size) rectangular coordinates, surrounded by the following five lines: i) Y=−444×X+154, ii) Y=910×X−46, iii) Y=0, iv) Y=300, and v) X=0.6.Type: GrantFiled: October 4, 2002Date of Patent: February 10, 2004Assignee: Global Nuclear Fuel - Japan Co., Ltd.Inventors: Shuichi Nanikawa, Shinji Ishimoto, Toshio Kubo
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Publication number: 20030230168Abstract: A discontinuously reinforced metal composite, having a metal matrix and a plurality of intermetallic particles comprising at least two different metals, the intermetallic particles having a size ranging from 1 &mgr;m to about 10 &mgr;m and being dispersed within the metal matrix in an amount of at least 20% by volume, wherein the intermetallic particles are particles having at least one same metal as the metal in the metal matrix.Type: ApplicationFiled: June 13, 2003Publication date: December 18, 2003Inventors: Gollapudi S. Murty, Brian E. Joseph
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Publication number: 20030168131Abstract: High purity tantalum metals and alloys containing the same are described. The tantalum metal preferably has a purity of at least 99.995% and more preferably at least 99.999%. In addition, tantalum metal and alloys thereof are described, which either have a grain size of about 50 microns or less, or a texture in which a (100) intensity within any 5% increment of thickness is less than about 15 random, or an incremental log ratio of (111):(100) intensity of greater than about −4.0, or any combination of these properties. Also described are articles and components made from the tantalum metal which include, but are not limited to, sputtering targets, capacitor cans, resistive film layers, wire, and the like. Also disclosed is a process for making the high purity metal which includes the step of reacting a salt-containing tantalum with at least one compound capable of reducing this salt to tantalum powder and a second salt in a reaction container.Type: ApplicationFiled: December 17, 2002Publication date: September 11, 2003Inventors: Christopher A. Michaluk, Louis E. Huber, Mark N. Kawchak, James D. Maguire
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Patent number: 6610421Abstract: A spin electronic material exhibiting a spin-dependent electronic effect includes zincblende TE-VE, where TE stands for V, Cr or Mn and VE stands for As or Sb.Type: GrantFiled: September 7, 2001Date of Patent: August 26, 2003Assignee: National Institute of Advanced Industrial Science and TechnologyInventors: Hiroyuki Akinaga, Masafumi Shirai, Takashi Manago
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Patent number: 6596100Abstract: A metal-made seamless pipe is provided, containing at least one metal selected from the group consisting of metals each having a melting point of 1,600° C. or more, and has a porosity of 0.3 to 25%. The porosity is defined as a ratio of the open pores present at the outer surface of the pipe to the total surface area of the outer surface of the pipe. The open pores do not include through-pores perforating to the inner surface of the pipe. A process for producing such a metal-made seamless pipe is also provided. The metal-made seamless pipe is low in processability but can be produced having a small thickness and a small inner diameter, having superior mechanical strength and gastightness, and can be suitably used as a sealing member of a translucent vessel of a high-pressure discharge lamp.Type: GrantFiled: September 20, 2001Date of Patent: July 22, 2003Assignee: NGK Insulators, Ltd.Inventor: Norikazu Niimi
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Patent number: 6576069Abstract: An alloy comprising tantalum and silicon is described. The tantalum is the predominant metal present. The alloy also has a uniformity of tensile strength when formed into a wire, such that the maximum population standard deviation of tensile strength for the wire is about 3 KSI for an unannealed wire at finish diameter and about 2 KSI for an annealed wire at finish diameter. Also described is a process of making a Ta-Si alloy which includes reducing a silicon-containing solid and a tantalum-containing solid into a liquid state and mixing the liquids to form a liquid blend and forming a solid alloy from the liquid blend. Another process of making a Ta-Si alloy is described which involves blending powders containing tantalum or an oxide thereof with powders containing silicon or a silicon-containing compound to form a blend and then reducing the blend to a liquid state and forming a solid alloy from the liquid state.Type: GrantFiled: May 19, 1999Date of Patent: June 10, 2003Assignee: Cabot CorporationInventors: Louis E. Huber, Jr., Christopher A. Michaluk
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Publication number: 20030089429Abstract: The sputter target includes a tantalum body having tantalum grains formed from consolidating tantalum powder and a sputter face. The sputter face has an atom transport direction for transporting tantalum atoms away from the sputter face for coating a substrate. The tantalum grains have at least a 40 percent (222) direction orientation ratio and less than a 15 percent (110) direction orientation ratio in an atom transport direction away from the sputter face for increasing sputtering uniformity.Type: ApplicationFiled: September 18, 2001Publication date: May 15, 2003Inventors: Holger J. Koenigsmann, Paul S. Gilman
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Publication number: 20030066578Abstract: A niobium-silicide refractory metal intermetallic composite adapted for use in a turbine component. The niobium-silicide refractory metal intermetallic composite comprises: between about 19 atomic percent and about 24 atomic percent titanium; between about 1 atomic percent and about 5 atomic percent hafnium; between about 16 atomic percent and about 22 atomic percent silicon; between about 7 atomic percent and about 14 atomic percent chromium; from about 1.5 atomic percent to about 3 atomic percent tin; and a balance of niobium. The niobium silicide refractory intermetallic composite contains a tetragonal phase, which comprises a volume fraction from 0.35 to 0.5 of the niobium silicide refractory intermetallic composite, and a hexagonal M3Si5 silicide phase (wherein M is at least one of Nb and Hf) which comprises a volume fraction comprises less than 0.25 of the niobium silicide refractory intermetallic composite.Type: ApplicationFiled: October 3, 2002Publication date: April 10, 2003Applicant: General Electric CompanyInventors: Melvin Robert Jackson, Bernard Patrick Bewlay, Ji-Cheng Zhao
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Patent number: 6540851Abstract: An alloy comprising tantalum and silicon is described. The tantalum is the predominant metal present. The alloy also has a uniformity of tensile strength when formed into a wire, such that the maximum population standard deviation of tensile strength for the wire is about 3 KSI for an unannealed wire at finish diameter and about 2 KSI for an annealed wire at finish diameter. Also described is a process of making a Ta—Si alloy which includes reducing a silicon-containing solid and a tantalum-containing solid into a liquid state and mixing the liquids to form a liquid blend and forming a solid alloy from the liquid blend. Another process of making a Ta—Si alloy is described which involves blending powders containing tantalum or an oxide thereof with powders containing silicon or a silicon-containing compound to form a blend and then reducing the blend to a liquid state and forming a solid alloy from the liquid state.Type: GrantFiled: August 3, 2001Date of Patent: April 1, 2003Assignee: Cabot CorporationInventors: Louis E. Huber, Jr., Christopher A. Michaluk
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Publication number: 20030037847Abstract: High purity tantalum metals and alloys containing the same are described. The tantalum metal preferably has a purity of at least 99.995% and more preferably at least 99.999%. In addition, tantalum metal and alloys thereof are described, which either have a grain size of about 50 microns or less, or a texture in which a (100) intensity within any 5% increment of thickness is less than about 15 random, or an incremental log ratio of (111):(100) intensity of greater than about −4.0, or any combination of these properties. Also described are articles and components made from the tantalum metal which include, but are not limited to, sputtering targets, capacitor cans, resistive film layers, wire, and the like. Also disclosed is a process for making the high purity metal which includes the step of reacting a salt-containing tantalum with at least one compound capable of reducing this salt to tantalum powder and a second salt in a reaction container.Type: ApplicationFiled: May 14, 2002Publication date: February 27, 2003Inventors: Christopher A. Michaluk, Louis E. Huber, Mark N. Kawchak, James D. Maguire
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Patent number: 6517645Abstract: Valve metal articles such as wire, sheet or powder having a second metal, preferably in a peripheral margin, prepared by coating the valve metal with a salt solution of the metal additive and heat treating in the presence of an oxygen getter to remove the oxygen from the valve metal and the anion of the metal salt to form the metal additive. For tantalum wire a preferred second metal is nickel. A preferred oxygen getter is magnesium. Nickel-containing tantalum wire is useful for enhance bonding to sintered pressed tantalum powder pellets in the production of electrolytic capacitors.Type: GrantFiled: March 21, 2001Date of Patent: February 11, 2003Assignee: Cabot CorporationInventor: James A. Fife
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Publication number: 20020157736Abstract: Extruded tantalum billets and niobium billets are described having a substantially uniform grain size and preferably an average grain size of about 150 microns or less and more preferably an average grain size of about 100 microns or less. The extruded billet can then be forged or processed by other conventional techniques to form end use products such as sputtering targets. A process for making the extruded tantalum billets or niobium billets is also described and involves extruding a starting billet at a sufficient temperature and for a sufficient time to at least partially recrystallize the billet and form the extruded billet of the present invention.Type: ApplicationFiled: January 9, 2002Publication date: October 31, 2002Inventor: Christopher A. Michaluk
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Patent number: 6454994Abstract: The invention includes a method of forming a solid from at least two different powdered materials. A first and second of the different powder materials is compressed into a pellet. A melt pool is formed at a temperature which will melt both the first and second materials. The pellet is fed to the melt pool to melt the first and second materials, and the melted first and second materials are subsequently cooled to form the solid. The invention also includes a method of forming a solid which includes tantalum and silicon. The invention further includes a homogeneous solid comprising tantalum and silicon, and formed from a molten mixture of tantalum and silicon.Type: GrantFiled: August 28, 2000Date of Patent: September 24, 2002Assignee: Honeywell International Inc.Inventor: Guangxin Wang
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Patent number: 6447623Abstract: A two-phase niobium-based silicide composite exhibits creep resistance at temperatures equal to or greater than 1150° C. The niobium-based silicide composite comprises at least silicon (Si) hafnium (Hf), titanium (Ti), and niobium (Nb). The concentration ratio of Nb:(Hf+Ti) is equal to or greater than about 1.4.Type: GrantFiled: August 24, 2000Date of Patent: September 10, 2002Assignees: General Electric Company, Brown University Research FoundationInventors: Melvin Robert Jackson, Bernard Patrick Bewlay, Clyde Leonard Briant
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Patent number: 6440278Abstract: A sputtering target comprising a substrate and a target material formed on the substrate, wherein the target material comprises a metal oxide of the chemical formula MOx as the main component, wherein MOx is a metal oxide which is deficient in oxygen as compared with the stoichiometric composition, and M is at least one metal selected from the group consisting of Ti, Nb, Ta, Mo, W, Zr and Hf, a process for its production, and a method for forming a film having a high refractive index.Type: GrantFiled: September 28, 2001Date of Patent: August 27, 2002Assignee: Asahi Glass Company Ltd.Inventors: Otojiro Kida, Akira Mitsui, Eri Suzuki, Hisashi Osaki, Atsushi Hayashi
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Publication number: 20020112789Abstract: A method (10) of forming sputtering target (11) from ingots of tantalum or niobium of requisite purity by the process of cutting the ingot to short lengths (12) and pressure working (14, 22, 30, 34) the ingot along alternating essentially orthogonal work axes. Intermediate anneals (18, 26, 38) are applied as necessary to establish a uniform texture thickness-wise and area-wide throughout the target, including the center. The uniform texture is a substantially constant mix of grains with orientation {100} and {111}, thereby improving sputtering performance by providing a more predictable sputter rate to control film thickness.Type: ApplicationFiled: February 20, 2002Publication date: August 22, 2002Applicant: H.C. Starck, Inc.Inventors: Peter R. Jepson, Henning Uhlenhut, Prabhat Kumar
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Publication number: 20020104594Abstract: A niobium-silicide refractory metal intermetallic composite adapted for use in a turbine component. The niobium-silicide refractory metal intermetallic composite comprises: between about 19 atomic percent and about 24 atomic percent titanium; between about 1 atomic percent and about 5 atomic percent hafnium; up to about 7 atomic percent tantalum; between about 16 atomic percent and about 22 atomic percent silicon; up to about 6 atomic percent germanium; up to about 5 atomic percent boron; between about 7 atomic percent and about 14 atomic percent chromium; up to about 4 atomic percent iron; up to about 4 atomic percent aluminum; up to about 3 atomic percent tin; up to about 3 atomic percent tungsten; up to about 3 atomic percent molybdenum; and a balance of niobium.Type: ApplicationFiled: December 13, 2000Publication date: August 8, 2002Applicant: General Electric CompanyInventors: Melvin Robert Jackson, Bernard Patrick Bewlay, Ji-Cheng Zhao
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Publication number: 20020104595Abstract: A niobium-silicide refractory metal intermetallic composite having enhanced material characteristics, such as oxidation resistance, creep resistance, and toughness, and turbine components made therefrom.Type: ApplicationFiled: December 13, 2000Publication date: August 8, 2002Applicant: General Electric CompanyInventors: Melvin Robert Jackson, Bernard Patrick Bewlay, Ji-Cheng Zhao
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Patent number: 6428910Abstract: A refractory metal intermetallic composition comprising titanium (Ti), hafnium (Hf), silicon (Si), aluminum (Al), chromium (Cr), germanium (Ge), tin (Sn), iron (Fe), and a balance of niobium (Nb) for use in composite structures having applications in turbine components.Type: GrantFiled: August 31, 2000Date of Patent: August 6, 2002Assignee: General Electric CompanyInventors: Melvin Robert Jackson, Bernard Patrick Bewlay, Ji-Cheng Zhao, Reed Roeder Corderman
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Patent number: 6419765Abstract: A niobium-silicide refractory metal intermetallic composite having enhanced material characteristics, such as oxidation resistance, creep resistance, and toughness, and turbine components made therefrom.Type: GrantFiled: December 13, 2000Date of Patent: July 16, 2002Assignee: General Electric CompanyInventors: Melvin Robert Jackson, Bernard Patrick Bewlay, Ji-Cheng Zhao
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Patent number: 6419764Abstract: A hydrogen storage material includes a vanadium-based body-centered cubic matrix phase containing at least titanium and nickel in solid solution in the matrix phase. There is a positive correlation between the titanium concentration distribution in the matrix phase and the nickel concentration distribution in the matrix phase. The hydrogen storage material has a high activation characteristic and can be produced without heat-treatment at low cost. The material has the ground formula V160−x−y−zTixCryNiz, where 5≦x≦15, 5≦y≦25, 0<z<(½)x and z<5.Type: GrantFiled: June 21, 2000Date of Patent: July 16, 2002Assignee: Aisin Seiki Kabushiki KaishaInventors: Yoshihisa Kamiya, Kunio Takahashi, Makoto Tsukahara
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Patent number: 6420043Abstract: A flaked niobium powder is disclosed as well as electrolytic capacitors formed from the flaked niobium powders. Niobium powders having a BET surface area of at least about 0.50 m2/g are also disclosed and capacitors made therefrom, as well as niobium powders doped with an oxygen content of at least 2,000 ppm. Methods to reduce DC leakage in a niobium anode are also disclosed.Type: GrantFiled: August 4, 2000Date of Patent: July 16, 2002Assignee: Cabot CorporationInventors: James A. Fife, Jane Jia Liu, Roger W. Steele
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Publication number: 20020088507Abstract: Nitrided valve metals are described, such as nitrided tantalum and nitrided niobium. The nitrided valve metals preferably have improved flow properties, higher Scott Densities, and/or improved pore size distribution which leads to improved physical properties of the valve metal and improved electrical properties once the valve metal is formed into a capacitor anode. Processes for preparing a nitrided valve metal are further described and involve nitriding the valve metal at a sufficient temperature and pressure during a heat treatment that is prior to the deoxidation step. Capacitor anodes and other products incorporating the valve metals of the present invention are further described.Type: ApplicationFiled: February 28, 2001Publication date: July 11, 2002Inventors: Bhamidipaty K.D. Prasad Rao, Kamiswari Bhamidipaty Rao, Shi Yuan
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Patent number: 6409848Abstract: A niobium-based silicide composite exhibiting creep resistance at temperatures equal to or greater than 1150° C. The niobium-based silicide composite comprises at least silicon (Si), hafnium (Hf), titanium (Ti), and niobium (Nb). A concentration ratio of Nb:(Hf+Ti) is equal to or greater than about 1.4. The niobium-based silicide composite exhibits a creep rate less than about 5×10−8s−1 at temperatures up to about 1200° C. and at a stress of about 200 MPa.Type: GrantFiled: August 24, 2000Date of Patent: June 25, 2002Assignee: General Electric CompanyInventors: Bernard Patrick Bewlay, Melvin Robert Jackson
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Publication number: 20020063056Abstract: Described is the production of a metal article with fine metallurgical structure and texture by a process that includes forging and rolling and control of the forging and rolling conditions. Also described is a metal article with a minimum of statically crystallized grain size and a uniform (100) cubic texture.Type: ApplicationFiled: December 11, 2001Publication date: May 30, 2002Inventors: Ritesh P. Shah, Vladimir Segal
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Patent number: 6395405Abstract: A hydride battery electrode is coated with palladium or a palladium alloy to improve hydride storage properties and recycle characteristics. A hydrogen purification membrane including a metallic substrate likewise has improved properties upon coating with palladium and a surface species of an alkali metal, alkaline earth element or alkaline earth cation. Novel metal hydrogen purification membranes include vanadium alloyed with at least 1 to 20 atomic percent nickel and/or 1 to 20 atomic percent cobalt and/or 1 to 20 atomic percent palladium.Type: GrantFiled: November 9, 1999Date of Patent: May 28, 2002Inventor: Robert E. Buxbaum
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Publication number: 20020038681Abstract: The object of the present invention is to provide a masking material for dry etching, which is suitable for fine processing of a magnetic film as thin as a few nm such as NiFe or CoFe constituting a TMR film and capable of simplifying the process for producing a TMR element and reducing production costs related to facilities and materials. This object was solved by a masking material for dry etching of a magnetic material by using a mixed gas of carbon monoxide and a nitrogenous compound as etching gas, which comprises a metal (tantalum, tungsten, zirconium or hafnium) with a melting or boiling point increasing upon conversion thereof into a nitride or carbide.Type: ApplicationFiled: July 24, 2001Publication date: April 4, 2002Inventors: Isao Nakatani, Kimiko Mashimo, Naoko Matsui
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Publication number: 20020026965Abstract: High purity tantalum metals and alloys containing the same are described. The tantalum metal preferably has a purity of at least 99.995 % and more preferably at least 99.999%. In addition, tantalum metal and alloys thereof are described, which either have a grain size of about 50 microns or less, or a texture in which a (100) intensity within any 5% increment of thickness is less than about 15 random, or an incremental log ratio of (111):(100) intensity of greater than about −4.0, or any combination of these properties. Also described are articles and components made from the tantalum metal which include, but are not limited to, sputtering targets, capacitor cans, resistive film layers, wire, and the like. Also disclosed is a process for making the high purity metal which includes the step of reacting a salt-containing tantalum with at least one compound capable of reducing this salt to tantalum powder and a second salt in a reaction container.Type: ApplicationFiled: August 6, 2001Publication date: March 7, 2002Inventors: Christopher A. Michaluk, Louis E. Huber, Mark N. Kawchak, James D. Maguire
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Patent number: 6348139Abstract: Described is the production of a metal article with fine metallurgical structure and texture by a process that includes forging and rolling and control of the forging and rolling conditions. Also described is a metal article with a minimum of statically crystallized grain size and a uniform (100) cubic texture.Type: GrantFiled: June 17, 1998Date of Patent: February 19, 2002Assignee: Honeywell International Inc.Inventors: Ritesh P. Shah, Vladimir Segal
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Patent number: 6338764Abstract: To provide a hydrogen absorbing alloy having a BCC (body-centered cubic structure) as a crystal structure, and particularly a hydrogen-absorbing alloy for a nickel-hydride cell having excellent discharge capacity and durability (cycle characteristics), said hydrogen-absorbing alloy having a composition expressed by the general formula Ti(100−a−b−c−d)CraVbNicXd, where X is at least one member selected from the group consisting of Y (yttrium), lanthanoids, Pd and Pt, and each of a, b, c and d is represented, in terms of at %, by the relations 8≦a≦50, 30<b≦60, 5≦c≦15, 2≦d≦10 and 40≦a+b+c+d≦90, wherein the crystal structure of a principal phase is a body-centered cubic structure, and further, the alloy contains at least one of Mo and W in place of V and at least one member selected from the group consisting of Y (yttrium), lanthanoids, Pd and Pt, and its crystal structure is converted to the body-centered cubic structure by heat-treatment.Type: GrantFiled: April 29, 1999Date of Patent: January 15, 2002Assignee: Toyota Jidosha Kabushiki KaishaInventors: Toshihiro Mori, Hideki Iba
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Patent number: 6331233Abstract: A method for producing a tantalum sputtering component includes a minimum of three stages each of which include a deformation step followed by an inert atmosphere high-temperature anneal. Temperatures of each of the anneal steps can be different from one another. A tantalum sputtering component includes a mean grain size of less than about 100 microns and a uniform texture throughout the component thickness. The uniform texture can be predominately {111}<uvw>.Type: GrantFiled: February 2, 2000Date of Patent: December 18, 2001Assignee: Honeywell International Inc.Inventor: Stephen P. Turner
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Publication number: 20010030005Abstract: Valve metal articles such as wire, sheet or powder having a second metal, preferably in a peripheral margin, prepared by coating the valve metal with a salt solution of the metal additive and heat treating in the presence of an oxygen getter to remove the oxygen from the valve metal and the anion of the metal salt to form the metal additive. For tantalum wire a preferred second metal is nickel. A preferred oxygen getter is magnesium. Nickel-containing tantalum wire is useful for enhance bonding to sintered pressed tantalum powder pellets in the production of electrolytic capacitors.Type: ApplicationFiled: March 21, 2001Publication date: October 18, 2001Inventor: James A. Fife
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Patent number: 6238494Abstract: Described is a polycrystalline, metallic sputtering target with a minimum of statically crystallized grain size difference in grain size at any location of less than about ±3%, as well as a dispersion in orientation content ratio of textures of less than about ±4% at any location.Type: GrantFiled: September 29, 1999Date of Patent: May 29, 2001Assignee: Johnson Matthey Electronics Inc.Inventor: Vladimir Segal
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Patent number: 6238491Abstract: The present invention is a medical implant or device fabricated, in any manner, from a niobium (Nb)—titanium (Ti)—zirconium (Zr)—Molybdenum (Mo) alloy (NbTiZrMo alloy). The implant or device has components at least partially fabricated from a metal alloy comprising a) between about 29 and 70 weight percent Nb; b) between about 10 and 46 weight percent Zr; c) between about 3 and 15 weight percent Mo; and a balance of titanium. The inventive alloy provides for a uniform beta structure which is corrosion resistant, and can be readily processed to develop high-strength and low-modulus, with the ability for conversion oxidation or nitridization surface hardening of the medical implant or device.Type: GrantFiled: May 5, 1999Date of Patent: May 29, 2001Assignee: DaviTech, Inc.Inventors: James A. Davidson, Lee H. Tuneberg
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Patent number: 6193821Abstract: A process for treating substantially pure tantalum includes plastically deformed a billet, such as by side-forging or side-rolling, to reduce a first dimension of the billet transverse to the centerline, preferably by about 70% to about 85%. The billet is then upset, such as by upset forging or upset rolling, to reduce a second dimension of the billet transverse to the first dimension (for example, a second dimension lying parallel to the centerline), preferably by about 90% to about 99%. In accordance with an especially preferred process, the upsetting of the billet is followed by rolling along a plane normal to the second dimension. It has been found that billets prepared in accordance with the invention have grain sizes no greater than about 25 &mgr;m and predominantly <222> textures relative to their rolling planes, so that targets machined from such billets in such a way that their sputtering surfaces correspond with these rolling planes will have the same predominant <222> textures.Type: GrantFiled: July 14, 1999Date of Patent: February 27, 2001Assignee: Tosoh SMD, Inc.Inventor: Hao Zhang
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Patent number: 6017401Abstract: A method of increasing conductivity of a refractory metal film disposed upon a substrate includes exposing the refractory metal film to an atmosphere comprising a silane of the form Si.sub.n H.sub.(2n+2), where n is a positive integer, while subjecting the refractory metal film to a temperature in excess of 700 degrees Celsius and to a base pressure not exceeding 10.sup.-8 torr for a time period which is chosen to be sufficiently long to increase the conductivity of the refractory metal film to a correspondingly sufficient degree.Type: GrantFiled: October 13, 1998Date of Patent: January 25, 2000Assignee: International Business Machines CorporationInventors: Fenton Read McFeely, Ismail Cevdet Noyan, John Jacob Yurkas
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Patent number: 6010580Abstract: A composite penetrator has a plurality of dispersed high aspect ratio bodies of refractory heavy metal such as tungsten wires. A matrix of metal surrounds and wets the dispersed bodies for forming an integral penetrator. The matrix metal is characterized by having localized shear band deformation when strained. The heavy metal is selected from the group consisting of tungsten, tantalum, hafnium, uranium and alloys thereof. A variety of matrix alloys may be used which will remain amorphous or microcrystalline in an object as large as the penetrator when cooled from the molten state. An exemplary amorphous alloy comprises 41.25 atomic percent zirconium, 41.25% titanium, 13.75% copper, 12.5% nickel and 22.5% beryllium.Type: GrantFiled: September 24, 1997Date of Patent: January 4, 2000Assignee: California Institute of TechnologyInventors: Richard B. Dandliker, Robert D. Conner, Michael A. Tenhover, William L. Johnson