Vanadium, Niobum, Or Tantalum Base Patents (Class 148/422)
  • Patent number: 7073559
    Abstract: A method of producing metal fibers including melting a mixture of at least a fiber metal and a matrix metal, cooling the mixture to form a bulk matrix comprising at least a fiber phase and a matrix phase and removing at least a substantial portion of the matrix phase from the fiber phase. Additionally, the method may include deforming the bulk matrix. In certain embodiments, the fiber metal may be at least one of niobium, a niobium alloy, tantalum and a tantalum alloy and the matrix metal may be at least one of copper and a copper alloy. The substantial portion of the matrix phase may be removed, in certain embodiments, by dissolving of the matrix phase in a suitable mineral acid, such as, but not limited to, nitric acid, sulfuric acid, hydrochloric acid and phosphoric acid.
    Type: Grant
    Filed: July 2, 2003
    Date of Patent: July 11, 2006
    Assignee: ATI Properties, Inc.
    Inventors: Philip M. O'Larey, John J. Hebda, Ronald A. Graham
  • Patent number: 7066975
    Abstract: An object of the present invention is to provide nitrogen-containing metallic powder at high productivity, which powder contains a metal such as niobium or tantalum containing nitrogen uniformly, and enables production of an anode electrode that has high specific capacitance and low leakage current and that exhibits excellent reliability for a prolonged period of time. There is provided nitrogen-containing metallic powder which is a solid solution containing 50–20,000 ppm nitrogen, in which the metal that constitutes the metallic powder is niobium or tantalum. The nitrogen-containing metallic powder is produced through the process in which while a metallic compound is reduced with a reducing agent, a nitrogen-containing gas is introduced into a reaction system to thereby form metal, and nitrogen is simultaneously incorporated into metal.
    Type: Grant
    Filed: June 20, 2002
    Date of Patent: June 27, 2006
    Assignee: Cabot Supermetals, K.K.
    Inventors: Yukio Oda, Tomoo Izumi, Yoshikazu Noguchi
  • Patent number: 6929726
    Abstract: A sputtering target consists essentially of 0.1 to 50% by weight of at least one kind of element that forms an intermetallic compound with Al, and the balance of Al. The element that forms an intermetallic compound with Al is uniformly dispersed in the target texture, and in a mapping of EPMA analysis, a portion of which count number of detection sensitivity of the element is 22 or more is less than 60% by area ratio in a measurement area of 20×20 ?m. According to such a sputtering target, even when a sputtering method such as long throw sputtering or reflow sputtering is applied, giant dusts or large concavities can be suppressed in occurrence.
    Type: Grant
    Filed: January 8, 2004
    Date of Patent: August 16, 2005
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Koichi Watanabe, Takashi Ishigami
  • Patent number: 6923934
    Abstract: TiAl alloy includes 46 to 50 at % of Al, 5 at % or less of combination of Mo, V and Si, provided that Si content is 0.7 at % or less, and Mo content satisfies an equation of ?0.3x +17.5 at % or less where x represents Al (at %), and the remainder being Ti and inevitable impurities. Mo may be replaced by Fe or combination of Mo and Fe. TiAl alloy is heated to a melt, poured into a mold, and cooled at a rate of 150 to 250° C./min within a temperature range of 1500 to 1100° C. The resulting product can be used as cast. If desired, however, heat treatment such as HIP or homogenization may be performed within a temperature range of 1100 to 800° C. After the heat treatment, the melt is cooled at a rate of 100° C./min or more until room temperature.
    Type: Grant
    Filed: August 6, 2002
    Date of Patent: August 2, 2005
    Assignee: Ishikawajima-Harima Heavy Industries Co., Ltd.
    Inventor: Sadao Nishikiori
  • Patent number: 6913655
    Abstract: A niobium-silicide refractory metal intermetallic composite adapted for use in a turbine component. The niobium-silicide refractory metal intermetallic composite comprises: between about 19 atomic percent and about 24 atomic percent titanium; between about 1 atomic percent and about 5 atomic percent hafnium; between about 16 atomic percent and about 22 atomic percent silicon; between about 7 atomic percent and about 14 atomic percent chromium; from about 1.5 atomic percent to about 3 atomic percent tin; and a balance of niobium. The niobium silicide refractory intermetallic composite contains a tetragonal phase, which comprises a volume fraction from 0.35 to 0.5 of the niobium silicide refractory intermetallic composite, and a hexagonal M3Si5 silicide phase (wherein M is at least one of Nb and Hf) which comprises a volume fraction comprises less than 0.25 of the niobium silicide refractory intermetallic composite.
    Type: Grant
    Filed: October 3, 2002
    Date of Patent: July 5, 2005
    Assignee: General Electric Company
    Inventors: Melvin Robert Jackson, Bernard Patrick Bewlay, Ji-Cheng Zhao
  • Patent number: 6893513
    Abstract: High purity tantalum metals and alloys containing the same are described. The tantalum metal preferably has a purity of at least 99.995% and more preferably at least 99.999%. In addition, tantalum metal and alloys thereof are described, which either have a grain size of about 50 microns or less, or a texture in which a (100) intensity within any 5% increment of thickness is less than about 15 random, or an incremental log ratio of (111):(100) intensity of greater than about ?4.0, or any combination of these properties. Also described are articles and components made from the tantalum metal which include, but are not limited to, sputtering targets, capacitor cans, resistive film layers, wire, and the like. Also disclosed is a process for making the high purity metal which includes the step of reacting a salt-containing tantalum with at least one compound capable of reducing this salt to tantalum powder and a second salt in a reaction container.
    Type: Grant
    Filed: August 6, 2001
    Date of Patent: May 17, 2005
    Assignee: Cabot Corporation
    Inventors: Christopher A. Michaluk, Louis E. Huber, Mark N. Kawchak, James D. Maguire, Jr.
  • Patent number: 6863750
    Abstract: High purity niobium metals and alloys containing the same are described. The niobium metal preferably has a purity of at least 99.99% and more preferably at least 99.999%. In addition, niobium metal and alloys thereof are described, which either have a grain size of about 150 microns or less, or a texture in which a (100) intensity within any 5% increment of thickness is less than about 30 random, or an incremental log ratio of (111):(100) intensity of greater than about ?4.0, or any combination of these properties. Also described are articles and components made from the niobium metal which include, but are not limited to, sputtering targets, capacitor cans, resistive film layers, wire, and the like. Also disclosed is a process for making the high purity niobium metal which includes the step of reacting a salt-containing niobium and a metal salt along with at least one compound capable of reducing the salt-containing niobium to niobium and in a reaction container.
    Type: Grant
    Filed: May 21, 2001
    Date of Patent: March 8, 2005
    Assignee: Cabot Corporation
    Inventors: Christopher A. Michaluk, Louis E. Huber, Jr.
  • Publication number: 20040250924
    Abstract: The sputter target includes a tantalum body having tantalum grains formed from consolidating tantalum powder and a sputter face. The sputter face has an atom transport direction for transporting tantalum atoms away from the sputter face for coating a substrate. The tantalum grains have at least a 40 percent (222) direction orientation ratio and less than a 15 percent (110) direction orientation ratio in an atom transport direction away from the sputter face for increasing sputtering uniformity, the tantalum body being free of (200)-(222) direction banding detectable by Electron Back-Scattering Diffraction and wherein the sputter target has a purity of at least 99.99 (%) percent.
    Type: Application
    Filed: March 26, 2004
    Publication date: December 16, 2004
    Inventors: Holger J. Koenigsmann, Paul S. Gilman
  • Patent number: 6827828
    Abstract: The invention includes a method of forming a material which comprises at least two elements. More specifically, the method comprises providing an electrolytic cell comprising a cathode, an anode, and an electrolytic solution extending between the cathode and anode. A metallic product is electrolytically formed within the electrolytic cell. The forming of the metallic product comprises primarily electrorefining of a first element of the at least two elements and primarily electrowinning of a second element of the at least two elements. The invention also includes a mixed metal product comprising at least two elements, such as a product comprising tantalum and titanium.
    Type: Grant
    Filed: March 29, 2001
    Date of Patent: December 7, 2004
    Assignee: Honeywell International Inc.
    Inventor: Guangxin Wang
  • Patent number: 6770154
    Abstract: The sputter target includes a tantalum body having tantalum grains formed from consolidating tantalum powder and a sputter face. The sputter face has an atom transport direction for transporting tantalum atoms away from the sputter face for coating a substrate. The tantalum grains have at least a 40 percent (222) direction orientation ratio and less than a 15 percent (110) direction orientation ratio in an atom transport direction away from the sputter face for increasing sputtering uniformity.
    Type: Grant
    Filed: September 18, 2001
    Date of Patent: August 3, 2004
    Assignee: Praxair S.T. Technology, Inc.
    Inventors: Holger J. Koenigsmann, Paul S. Gilman
  • Patent number: 6767653
    Abstract: A turbine component comprises a substrate; and a crystalline coating disposed on a surface of the substrate, wherein the crystalline coating comprises tin and yttrium in an amount greater than or equal to about 0.05 atomic percent based upon the total coating. A method of making a turbine component comprises disposing a coating composition on a substrate, wherein the coating composition comprises tin and yttrium in an amount greater than or equal to about 0.1 atomic percent based upon the total coating composition. A crystalline coating comprises tin and yttrium in an amount greater than or equal to about 0.05 atomic percent based upon the total coating.
    Type: Grant
    Filed: December 27, 2002
    Date of Patent: July 27, 2004
    Assignee: General Electric Company
    Inventors: Bernard Bewlay, Melvin Jackson, Ji-Cheng Zhao
  • Patent number: 6736947
    Abstract: A sputtering target consists essentially of 0.1 to 50% by weight of at least one kind of element that forms an intermetallic compound with Al, and the balance of Al. The element that forms an intermetallic compound with Al is uniformly dispersed in the target texture, and in a mapping of EPMA analysis, a portion of which count number of detection sensitivity of the element is 22 or more is less than 60% by area ratio in a measurement area of 20×20 &mgr;m. According to such a sputtering target, even when a sputtering method such as long throw sputtering or reflow sputtering is applied, giant dusts or large concavities can be suppressed in occurrence.
    Type: Grant
    Filed: June 23, 2000
    Date of Patent: May 18, 2004
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Koichi Watanabe, Takashi Ishigami
  • Publication number: 20040062676
    Abstract: Alloys for use as stents which consist essentially of niobium (Nb), tantalum (Ta) and zirconium (Zr).
    Type: Application
    Filed: May 28, 2003
    Publication date: April 1, 2004
    Applicant: W.C. HERAEUS GmbH & CO. KG
    Inventors: Jens Trotzschel, Jurgen Wachter, Frank Kruger, Matthias Frericks
  • Patent number: 6690759
    Abstract: Disclosed herein are zirconium-base alloys excellent in both corrosion resistance and hydrogen absorption property, useful as materials for nuclear reactors. Such a zirconium-base alloy for nuclear reactors comprises 0.5-2 wt. % Sn, 0.07-0.6 wt. % Fe, 0.03-0.2 wt. % Ni, 0.05-0.2 wt. % Cr, and the balance being zirconium and unavoidable impurities, wherein the Fe content (X wt. %) of the zirconium-base alloy and the mean size (Y nm) of precipitates in the zirconium-base alloy are present in a region on the x (Fe content X) and y (mean precipitate size) rectangular coordinates, surrounded by the following five lines: i) Y=−444×X+154, ii) Y=910×X−46, iii) Y=0, iv) Y=300, and v) X=0.6.
    Type: Grant
    Filed: October 4, 2002
    Date of Patent: February 10, 2004
    Assignee: Global Nuclear Fuel - Japan Co., Ltd.
    Inventors: Shuichi Nanikawa, Shinji Ishimoto, Toshio Kubo
  • Publication number: 20030230168
    Abstract: A discontinuously reinforced metal composite, having a metal matrix and a plurality of intermetallic particles comprising at least two different metals, the intermetallic particles having a size ranging from 1 &mgr;m to about 10 &mgr;m and being dispersed within the metal matrix in an amount of at least 20% by volume, wherein the intermetallic particles are particles having at least one same metal as the metal in the metal matrix.
    Type: Application
    Filed: June 13, 2003
    Publication date: December 18, 2003
    Inventors: Gollapudi S. Murty, Brian E. Joseph
  • Publication number: 20030168131
    Abstract: High purity tantalum metals and alloys containing the same are described. The tantalum metal preferably has a purity of at least 99.995% and more preferably at least 99.999%. In addition, tantalum metal and alloys thereof are described, which either have a grain size of about 50 microns or less, or a texture in which a (100) intensity within any 5% increment of thickness is less than about 15 random, or an incremental log ratio of (111):(100) intensity of greater than about −4.0, or any combination of these properties. Also described are articles and components made from the tantalum metal which include, but are not limited to, sputtering targets, capacitor cans, resistive film layers, wire, and the like. Also disclosed is a process for making the high purity metal which includes the step of reacting a salt-containing tantalum with at least one compound capable of reducing this salt to tantalum powder and a second salt in a reaction container.
    Type: Application
    Filed: December 17, 2002
    Publication date: September 11, 2003
    Inventors: Christopher A. Michaluk, Louis E. Huber, Mark N. Kawchak, James D. Maguire
  • Patent number: 6610421
    Abstract: A spin electronic material exhibiting a spin-dependent electronic effect includes zincblende TE-VE, where TE stands for V, Cr or Mn and VE stands for As or Sb.
    Type: Grant
    Filed: September 7, 2001
    Date of Patent: August 26, 2003
    Assignee: National Institute of Advanced Industrial Science and Technology
    Inventors: Hiroyuki Akinaga, Masafumi Shirai, Takashi Manago
  • Patent number: 6596100
    Abstract: A metal-made seamless pipe is provided, containing at least one metal selected from the group consisting of metals each having a melting point of 1,600° C. or more, and has a porosity of 0.3 to 25%. The porosity is defined as a ratio of the open pores present at the outer surface of the pipe to the total surface area of the outer surface of the pipe. The open pores do not include through-pores perforating to the inner surface of the pipe. A process for producing such a metal-made seamless pipe is also provided. The metal-made seamless pipe is low in processability but can be produced having a small thickness and a small inner diameter, having superior mechanical strength and gastightness, and can be suitably used as a sealing member of a translucent vessel of a high-pressure discharge lamp.
    Type: Grant
    Filed: September 20, 2001
    Date of Patent: July 22, 2003
    Assignee: NGK Insulators, Ltd.
    Inventor: Norikazu Niimi
  • Patent number: 6576069
    Abstract: An alloy comprising tantalum and silicon is described. The tantalum is the predominant metal present. The alloy also has a uniformity of tensile strength when formed into a wire, such that the maximum population standard deviation of tensile strength for the wire is about 3 KSI for an unannealed wire at finish diameter and about 2 KSI for an annealed wire at finish diameter. Also described is a process of making a Ta-Si alloy which includes reducing a silicon-containing solid and a tantalum-containing solid into a liquid state and mixing the liquids to form a liquid blend and forming a solid alloy from the liquid blend. Another process of making a Ta-Si alloy is described which involves blending powders containing tantalum or an oxide thereof with powders containing silicon or a silicon-containing compound to form a blend and then reducing the blend to a liquid state and forming a solid alloy from the liquid state.
    Type: Grant
    Filed: May 19, 1999
    Date of Patent: June 10, 2003
    Assignee: Cabot Corporation
    Inventors: Louis E. Huber, Jr., Christopher A. Michaluk
  • Publication number: 20030089429
    Abstract: The sputter target includes a tantalum body having tantalum grains formed from consolidating tantalum powder and a sputter face. The sputter face has an atom transport direction for transporting tantalum atoms away from the sputter face for coating a substrate. The tantalum grains have at least a 40 percent (222) direction orientation ratio and less than a 15 percent (110) direction orientation ratio in an atom transport direction away from the sputter face for increasing sputtering uniformity.
    Type: Application
    Filed: September 18, 2001
    Publication date: May 15, 2003
    Inventors: Holger J. Koenigsmann, Paul S. Gilman
  • Publication number: 20030066578
    Abstract: A niobium-silicide refractory metal intermetallic composite adapted for use in a turbine component. The niobium-silicide refractory metal intermetallic composite comprises: between about 19 atomic percent and about 24 atomic percent titanium; between about 1 atomic percent and about 5 atomic percent hafnium; between about 16 atomic percent and about 22 atomic percent silicon; between about 7 atomic percent and about 14 atomic percent chromium; from about 1.5 atomic percent to about 3 atomic percent tin; and a balance of niobium. The niobium silicide refractory intermetallic composite contains a tetragonal phase, which comprises a volume fraction from 0.35 to 0.5 of the niobium silicide refractory intermetallic composite, and a hexagonal M3Si5 silicide phase (wherein M is at least one of Nb and Hf) which comprises a volume fraction comprises less than 0.25 of the niobium silicide refractory intermetallic composite.
    Type: Application
    Filed: October 3, 2002
    Publication date: April 10, 2003
    Applicant: General Electric Company
    Inventors: Melvin Robert Jackson, Bernard Patrick Bewlay, Ji-Cheng Zhao
  • Patent number: 6540851
    Abstract: An alloy comprising tantalum and silicon is described. The tantalum is the predominant metal present. The alloy also has a uniformity of tensile strength when formed into a wire, such that the maximum population standard deviation of tensile strength for the wire is about 3 KSI for an unannealed wire at finish diameter and about 2 KSI for an annealed wire at finish diameter. Also described is a process of making a Ta—Si alloy which includes reducing a silicon-containing solid and a tantalum-containing solid into a liquid state and mixing the liquids to form a liquid blend and forming a solid alloy from the liquid blend. Another process of making a Ta—Si alloy is described which involves blending powders containing tantalum or an oxide thereof with powders containing silicon or a silicon-containing compound to form a blend and then reducing the blend to a liquid state and forming a solid alloy from the liquid state.
    Type: Grant
    Filed: August 3, 2001
    Date of Patent: April 1, 2003
    Assignee: Cabot Corporation
    Inventors: Louis E. Huber, Jr., Christopher A. Michaluk
  • Publication number: 20030037847
    Abstract: High purity tantalum metals and alloys containing the same are described. The tantalum metal preferably has a purity of at least 99.995% and more preferably at least 99.999%. In addition, tantalum metal and alloys thereof are described, which either have a grain size of about 50 microns or less, or a texture in which a (100) intensity within any 5% increment of thickness is less than about 15 random, or an incremental log ratio of (111):(100) intensity of greater than about −4.0, or any combination of these properties. Also described are articles and components made from the tantalum metal which include, but are not limited to, sputtering targets, capacitor cans, resistive film layers, wire, and the like. Also disclosed is a process for making the high purity metal which includes the step of reacting a salt-containing tantalum with at least one compound capable of reducing this salt to tantalum powder and a second salt in a reaction container.
    Type: Application
    Filed: May 14, 2002
    Publication date: February 27, 2003
    Inventors: Christopher A. Michaluk, Louis E. Huber, Mark N. Kawchak, James D. Maguire
  • Patent number: 6517645
    Abstract: Valve metal articles such as wire, sheet or powder having a second metal, preferably in a peripheral margin, prepared by coating the valve metal with a salt solution of the metal additive and heat treating in the presence of an oxygen getter to remove the oxygen from the valve metal and the anion of the metal salt to form the metal additive. For tantalum wire a preferred second metal is nickel. A preferred oxygen getter is magnesium. Nickel-containing tantalum wire is useful for enhance bonding to sintered pressed tantalum powder pellets in the production of electrolytic capacitors.
    Type: Grant
    Filed: March 21, 2001
    Date of Patent: February 11, 2003
    Assignee: Cabot Corporation
    Inventor: James A. Fife
  • Publication number: 20020157736
    Abstract: Extruded tantalum billets and niobium billets are described having a substantially uniform grain size and preferably an average grain size of about 150 microns or less and more preferably an average grain size of about 100 microns or less. The extruded billet can then be forged or processed by other conventional techniques to form end use products such as sputtering targets. A process for making the extruded tantalum billets or niobium billets is also described and involves extruding a starting billet at a sufficient temperature and for a sufficient time to at least partially recrystallize the billet and form the extruded billet of the present invention.
    Type: Application
    Filed: January 9, 2002
    Publication date: October 31, 2002
    Inventor: Christopher A. Michaluk
  • Patent number: 6454994
    Abstract: The invention includes a method of forming a solid from at least two different powdered materials. A first and second of the different powder materials is compressed into a pellet. A melt pool is formed at a temperature which will melt both the first and second materials. The pellet is fed to the melt pool to melt the first and second materials, and the melted first and second materials are subsequently cooled to form the solid. The invention also includes a method of forming a solid which includes tantalum and silicon. The invention further includes a homogeneous solid comprising tantalum and silicon, and formed from a molten mixture of tantalum and silicon.
    Type: Grant
    Filed: August 28, 2000
    Date of Patent: September 24, 2002
    Assignee: Honeywell International Inc.
    Inventor: Guangxin Wang
  • Patent number: 6447623
    Abstract: A two-phase niobium-based silicide composite exhibits creep resistance at temperatures equal to or greater than 1150° C. The niobium-based silicide composite comprises at least silicon (Si) hafnium (Hf), titanium (Ti), and niobium (Nb). The concentration ratio of Nb:(Hf+Ti) is equal to or greater than about 1.4.
    Type: Grant
    Filed: August 24, 2000
    Date of Patent: September 10, 2002
    Assignees: General Electric Company, Brown University Research Foundation
    Inventors: Melvin Robert Jackson, Bernard Patrick Bewlay, Clyde Leonard Briant
  • Patent number: 6440278
    Abstract: A sputtering target comprising a substrate and a target material formed on the substrate, wherein the target material comprises a metal oxide of the chemical formula MOx as the main component, wherein MOx is a metal oxide which is deficient in oxygen as compared with the stoichiometric composition, and M is at least one metal selected from the group consisting of Ti, Nb, Ta, Mo, W, Zr and Hf, a process for its production, and a method for forming a film having a high refractive index.
    Type: Grant
    Filed: September 28, 2001
    Date of Patent: August 27, 2002
    Assignee: Asahi Glass Company Ltd.
    Inventors: Otojiro Kida, Akira Mitsui, Eri Suzuki, Hisashi Osaki, Atsushi Hayashi
  • Publication number: 20020112789
    Abstract: A method (10) of forming sputtering target (11) from ingots of tantalum or niobium of requisite purity by the process of cutting the ingot to short lengths (12) and pressure working (14, 22, 30, 34) the ingot along alternating essentially orthogonal work axes. Intermediate anneals (18, 26, 38) are applied as necessary to establish a uniform texture thickness-wise and area-wide throughout the target, including the center. The uniform texture is a substantially constant mix of grains with orientation {100} and {111}, thereby improving sputtering performance by providing a more predictable sputter rate to control film thickness.
    Type: Application
    Filed: February 20, 2002
    Publication date: August 22, 2002
    Applicant: H.C. Starck, Inc.
    Inventors: Peter R. Jepson, Henning Uhlenhut, Prabhat Kumar
  • Publication number: 20020104594
    Abstract: A niobium-silicide refractory metal intermetallic composite adapted for use in a turbine component. The niobium-silicide refractory metal intermetallic composite comprises: between about 19 atomic percent and about 24 atomic percent titanium; between about 1 atomic percent and about 5 atomic percent hafnium; up to about 7 atomic percent tantalum; between about 16 atomic percent and about 22 atomic percent silicon; up to about 6 atomic percent germanium; up to about 5 atomic percent boron; between about 7 atomic percent and about 14 atomic percent chromium; up to about 4 atomic percent iron; up to about 4 atomic percent aluminum; up to about 3 atomic percent tin; up to about 3 atomic percent tungsten; up to about 3 atomic percent molybdenum; and a balance of niobium.
    Type: Application
    Filed: December 13, 2000
    Publication date: August 8, 2002
    Applicant: General Electric Company
    Inventors: Melvin Robert Jackson, Bernard Patrick Bewlay, Ji-Cheng Zhao
  • Publication number: 20020104595
    Abstract: A niobium-silicide refractory metal intermetallic composite having enhanced material characteristics, such as oxidation resistance, creep resistance, and toughness, and turbine components made therefrom.
    Type: Application
    Filed: December 13, 2000
    Publication date: August 8, 2002
    Applicant: General Electric Company
    Inventors: Melvin Robert Jackson, Bernard Patrick Bewlay, Ji-Cheng Zhao
  • Patent number: 6428910
    Abstract: A refractory metal intermetallic composition comprising titanium (Ti), hafnium (Hf), silicon (Si), aluminum (Al), chromium (Cr), germanium (Ge), tin (Sn), iron (Fe), and a balance of niobium (Nb) for use in composite structures having applications in turbine components.
    Type: Grant
    Filed: August 31, 2000
    Date of Patent: August 6, 2002
    Assignee: General Electric Company
    Inventors: Melvin Robert Jackson, Bernard Patrick Bewlay, Ji-Cheng Zhao, Reed Roeder Corderman
  • Patent number: 6419765
    Abstract: A niobium-silicide refractory metal intermetallic composite having enhanced material characteristics, such as oxidation resistance, creep resistance, and toughness, and turbine components made therefrom.
    Type: Grant
    Filed: December 13, 2000
    Date of Patent: July 16, 2002
    Assignee: General Electric Company
    Inventors: Melvin Robert Jackson, Bernard Patrick Bewlay, Ji-Cheng Zhao
  • Patent number: 6419764
    Abstract: A hydrogen storage material includes a vanadium-based body-centered cubic matrix phase containing at least titanium and nickel in solid solution in the matrix phase. There is a positive correlation between the titanium concentration distribution in the matrix phase and the nickel concentration distribution in the matrix phase. The hydrogen storage material has a high activation characteristic and can be produced without heat-treatment at low cost. The material has the ground formula V160−x−y−zTixCryNiz, where 5≦x≦15, 5≦y≦25, 0<z<(½)x and z<5.
    Type: Grant
    Filed: June 21, 2000
    Date of Patent: July 16, 2002
    Assignee: Aisin Seiki Kabushiki Kaisha
    Inventors: Yoshihisa Kamiya, Kunio Takahashi, Makoto Tsukahara
  • Patent number: 6420043
    Abstract: A flaked niobium powder is disclosed as well as electrolytic capacitors formed from the flaked niobium powders. Niobium powders having a BET surface area of at least about 0.50 m2/g are also disclosed and capacitors made therefrom, as well as niobium powders doped with an oxygen content of at least 2,000 ppm. Methods to reduce DC leakage in a niobium anode are also disclosed.
    Type: Grant
    Filed: August 4, 2000
    Date of Patent: July 16, 2002
    Assignee: Cabot Corporation
    Inventors: James A. Fife, Jane Jia Liu, Roger W. Steele
  • Publication number: 20020088507
    Abstract: Nitrided valve metals are described, such as nitrided tantalum and nitrided niobium. The nitrided valve metals preferably have improved flow properties, higher Scott Densities, and/or improved pore size distribution which leads to improved physical properties of the valve metal and improved electrical properties once the valve metal is formed into a capacitor anode. Processes for preparing a nitrided valve metal are further described and involve nitriding the valve metal at a sufficient temperature and pressure during a heat treatment that is prior to the deoxidation step. Capacitor anodes and other products incorporating the valve metals of the present invention are further described.
    Type: Application
    Filed: February 28, 2001
    Publication date: July 11, 2002
    Inventors: Bhamidipaty K.D. Prasad Rao, Kamiswari Bhamidipaty Rao, Shi Yuan
  • Patent number: 6409848
    Abstract: A niobium-based silicide composite exhibiting creep resistance at temperatures equal to or greater than 1150° C. The niobium-based silicide composite comprises at least silicon (Si), hafnium (Hf), titanium (Ti), and niobium (Nb). A concentration ratio of Nb:(Hf+Ti) is equal to or greater than about 1.4. The niobium-based silicide composite exhibits a creep rate less than about 5×10−8s−1 at temperatures up to about 1200° C. and at a stress of about 200 MPa.
    Type: Grant
    Filed: August 24, 2000
    Date of Patent: June 25, 2002
    Assignee: General Electric Company
    Inventors: Bernard Patrick Bewlay, Melvin Robert Jackson
  • Publication number: 20020063056
    Abstract: Described is the production of a metal article with fine metallurgical structure and texture by a process that includes forging and rolling and control of the forging and rolling conditions. Also described is a metal article with a minimum of statically crystallized grain size and a uniform (100) cubic texture.
    Type: Application
    Filed: December 11, 2001
    Publication date: May 30, 2002
    Inventors: Ritesh P. Shah, Vladimir Segal
  • Patent number: 6395405
    Abstract: A hydride battery electrode is coated with palladium or a palladium alloy to improve hydride storage properties and recycle characteristics. A hydrogen purification membrane including a metallic substrate likewise has improved properties upon coating with palladium and a surface species of an alkali metal, alkaline earth element or alkaline earth cation. Novel metal hydrogen purification membranes include vanadium alloyed with at least 1 to 20 atomic percent nickel and/or 1 to 20 atomic percent cobalt and/or 1 to 20 atomic percent palladium.
    Type: Grant
    Filed: November 9, 1999
    Date of Patent: May 28, 2002
    Inventor: Robert E. Buxbaum
  • Publication number: 20020038681
    Abstract: The object of the present invention is to provide a masking material for dry etching, which is suitable for fine processing of a magnetic film as thin as a few nm such as NiFe or CoFe constituting a TMR film and capable of simplifying the process for producing a TMR element and reducing production costs related to facilities and materials. This object was solved by a masking material for dry etching of a magnetic material by using a mixed gas of carbon monoxide and a nitrogenous compound as etching gas, which comprises a metal (tantalum, tungsten, zirconium or hafnium) with a melting or boiling point increasing upon conversion thereof into a nitride or carbide.
    Type: Application
    Filed: July 24, 2001
    Publication date: April 4, 2002
    Inventors: Isao Nakatani, Kimiko Mashimo, Naoko Matsui
  • Publication number: 20020026965
    Abstract: High purity tantalum metals and alloys containing the same are described. The tantalum metal preferably has a purity of at least 99.995 % and more preferably at least 99.999%. In addition, tantalum metal and alloys thereof are described, which either have a grain size of about 50 microns or less, or a texture in which a (100) intensity within any 5% increment of thickness is less than about 15 random, or an incremental log ratio of (111):(100) intensity of greater than about −4.0, or any combination of these properties. Also described are articles and components made from the tantalum metal which include, but are not limited to, sputtering targets, capacitor cans, resistive film layers, wire, and the like. Also disclosed is a process for making the high purity metal which includes the step of reacting a salt-containing tantalum with at least one compound capable of reducing this salt to tantalum powder and a second salt in a reaction container.
    Type: Application
    Filed: August 6, 2001
    Publication date: March 7, 2002
    Inventors: Christopher A. Michaluk, Louis E. Huber, Mark N. Kawchak, James D. Maguire
  • Patent number: 6348139
    Abstract: Described is the production of a metal article with fine metallurgical structure and texture by a process that includes forging and rolling and control of the forging and rolling conditions. Also described is a metal article with a minimum of statically crystallized grain size and a uniform (100) cubic texture.
    Type: Grant
    Filed: June 17, 1998
    Date of Patent: February 19, 2002
    Assignee: Honeywell International Inc.
    Inventors: Ritesh P. Shah, Vladimir Segal
  • Patent number: 6338764
    Abstract: To provide a hydrogen absorbing alloy having a BCC (body-centered cubic structure) as a crystal structure, and particularly a hydrogen-absorbing alloy for a nickel-hydride cell having excellent discharge capacity and durability (cycle characteristics), said hydrogen-absorbing alloy having a composition expressed by the general formula Ti(100−a−b−c−d)CraVbNicXd, where X is at least one member selected from the group consisting of Y (yttrium), lanthanoids, Pd and Pt, and each of a, b, c and d is represented, in terms of at %, by the relations 8≦a≦50, 30<b≦60, 5≦c≦15, 2≦d≦10 and 40≦a+b+c+d≦90, wherein the crystal structure of a principal phase is a body-centered cubic structure, and further, the alloy contains at least one of Mo and W in place of V and at least one member selected from the group consisting of Y (yttrium), lanthanoids, Pd and Pt, and its crystal structure is converted to the body-centered cubic structure by heat-treatment.
    Type: Grant
    Filed: April 29, 1999
    Date of Patent: January 15, 2002
    Assignee: Toyota Jidosha Kabushiki Kaisha
    Inventors: Toshihiro Mori, Hideki Iba
  • Patent number: 6331233
    Abstract: A method for producing a tantalum sputtering component includes a minimum of three stages each of which include a deformation step followed by an inert atmosphere high-temperature anneal. Temperatures of each of the anneal steps can be different from one another. A tantalum sputtering component includes a mean grain size of less than about 100 microns and a uniform texture throughout the component thickness. The uniform texture can be predominately {111}<uvw>.
    Type: Grant
    Filed: February 2, 2000
    Date of Patent: December 18, 2001
    Assignee: Honeywell International Inc.
    Inventor: Stephen P. Turner
  • Publication number: 20010030005
    Abstract: Valve metal articles such as wire, sheet or powder having a second metal, preferably in a peripheral margin, prepared by coating the valve metal with a salt solution of the metal additive and heat treating in the presence of an oxygen getter to remove the oxygen from the valve metal and the anion of the metal salt to form the metal additive. For tantalum wire a preferred second metal is nickel. A preferred oxygen getter is magnesium. Nickel-containing tantalum wire is useful for enhance bonding to sintered pressed tantalum powder pellets in the production of electrolytic capacitors.
    Type: Application
    Filed: March 21, 2001
    Publication date: October 18, 2001
    Inventor: James A. Fife
  • Patent number: 6238494
    Abstract: Described is a polycrystalline, metallic sputtering target with a minimum of statically crystallized grain size difference in grain size at any location of less than about ±3%, as well as a dispersion in orientation content ratio of textures of less than about ±4% at any location.
    Type: Grant
    Filed: September 29, 1999
    Date of Patent: May 29, 2001
    Assignee: Johnson Matthey Electronics Inc.
    Inventor: Vladimir Segal
  • Patent number: 6238491
    Abstract: The present invention is a medical implant or device fabricated, in any manner, from a niobium (Nb)—titanium (Ti)—zirconium (Zr)—Molybdenum (Mo) alloy (NbTiZrMo alloy). The implant or device has components at least partially fabricated from a metal alloy comprising a) between about 29 and 70 weight percent Nb; b) between about 10 and 46 weight percent Zr; c) between about 3 and 15 weight percent Mo; and a balance of titanium. The inventive alloy provides for a uniform beta structure which is corrosion resistant, and can be readily processed to develop high-strength and low-modulus, with the ability for conversion oxidation or nitridization surface hardening of the medical implant or device.
    Type: Grant
    Filed: May 5, 1999
    Date of Patent: May 29, 2001
    Assignee: DaviTech, Inc.
    Inventors: James A. Davidson, Lee H. Tuneberg
  • Patent number: 6193821
    Abstract: A process for treating substantially pure tantalum includes plastically deformed a billet, such as by side-forging or side-rolling, to reduce a first dimension of the billet transverse to the centerline, preferably by about 70% to about 85%. The billet is then upset, such as by upset forging or upset rolling, to reduce a second dimension of the billet transverse to the first dimension (for example, a second dimension lying parallel to the centerline), preferably by about 90% to about 99%. In accordance with an especially preferred process, the upsetting of the billet is followed by rolling along a plane normal to the second dimension. It has been found that billets prepared in accordance with the invention have grain sizes no greater than about 25 &mgr;m and predominantly <222> textures relative to their rolling planes, so that targets machined from such billets in such a way that their sputtering surfaces correspond with these rolling planes will have the same predominant <222> textures.
    Type: Grant
    Filed: July 14, 1999
    Date of Patent: February 27, 2001
    Assignee: Tosoh SMD, Inc.
    Inventor: Hao Zhang
  • Patent number: 6017401
    Abstract: A method of increasing conductivity of a refractory metal film disposed upon a substrate includes exposing the refractory metal film to an atmosphere comprising a silane of the form Si.sub.n H.sub.(2n+2), where n is a positive integer, while subjecting the refractory metal film to a temperature in excess of 700 degrees Celsius and to a base pressure not exceeding 10.sup.-8 torr for a time period which is chosen to be sufficiently long to increase the conductivity of the refractory metal film to a correspondingly sufficient degree.
    Type: Grant
    Filed: October 13, 1998
    Date of Patent: January 25, 2000
    Assignee: International Business Machines Corporation
    Inventors: Fenton Read McFeely, Ismail Cevdet Noyan, John Jacob Yurkas
  • Patent number: 6010580
    Abstract: A composite penetrator has a plurality of dispersed high aspect ratio bodies of refractory heavy metal such as tungsten wires. A matrix of metal surrounds and wets the dispersed bodies for forming an integral penetrator. The matrix metal is characterized by having localized shear band deformation when strained. The heavy metal is selected from the group consisting of tungsten, tantalum, hafnium, uranium and alloys thereof. A variety of matrix alloys may be used which will remain amorphous or microcrystalline in an object as large as the penetrator when cooled from the molten state. An exemplary amorphous alloy comprises 41.25 atomic percent zirconium, 41.25% titanium, 13.75% copper, 12.5% nickel and 22.5% beryllium.
    Type: Grant
    Filed: September 24, 1997
    Date of Patent: January 4, 2000
    Assignee: California Institute of Technology
    Inventors: Richard B. Dandliker, Robert D. Conner, Michael A. Tenhover, William L. Johnson