Abstract: The present invention relates to a heat treatment apparatus that performs activation annealing or defect repair annealing and surface oxidization which succeed impurity doping intended to control the conductive property of a semiconductor substrate. In the present invention, a sample to be heated is placed on a lower electrode in a plasma treatment chamber. A gap between an upper electrode and the lower electrode is filled with a gap whose main raw material is a rare gas (helium, argon, krypton, xenon, or the like) having a pressure close to the atmospheric pressure. A power fed from a high-frequency power supply is applied to the upper electrode in order to induce an atmospheric-pressure glow discharge. Gas heating in the gap between the electrodes, which depends on the glow discharge, is used to heat-treat the sample to be heated.

Abstract: Etching a layer over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to the outer zone within the plasma processing chamber, where the outer zone surrounds the inner zone and the first gas is different than the second gas. Plasmas are simultaneously generated from the first gas and second gas. The layer is etched, where the layer is etched by the plasmas from the first gas and second gas.

Abstract: The present invention relates to a plasma processing apparatus in which it is possible to efficiently perform maintenance of a processing chamber. A plasma processing apparatus has a processing chamber including a lower chamber and an upper chamber, a platen on which a silicon substrate is placed, a processing gas supply device, coils, high-frequency power supply unit for coil, an elevating board with a through hole provided to be vertically movable, an elevating mechanism for supporting and moving the elevating board, and a fixing mechanism for fixing the upper chamber. The fixing member is configured from a fixing board, first fixing bolts for connecting and fixing a top plate to the elevating board using the fixing board, second fixing bolts for fixing a flange portion of a holding member to an annular plate, and third fixing bolts for fixing the annular plate to a sidewall of the lower chamber.

Abstract: A plasma processing device according to one embodiment comprises a processing vessel, a gas supply unit, a lower electrode and an upper electrode. The processing vessel defines a processing space. The gas supply unit supplies processing gas into the processing space. The lower electrode is provided below the processing space. The upper electrode is provided above the processing space, and a covering layer having plasma-resistant properties is formed on this upper electrode. The surface of this covering layer is polished.

Abstract: In a plasma processing apparatus for generating a plasma in a plasma generation space between a lower electrode and an upper electrode so that a processing object mounted on the lower electrode is subjected to plasma processing, a plurality of cutout portions for absorption of strain caused by thermal expansion due to rapid temperature increases in the plasma processing are formed at an equal pitch in an outer edge portion of a gas shower plate included in the upper electrode. Thus, the gas shower plate can be prevented from being damaged by occurrence of cracks in the outer edge portion of the gas shower plate or the like.

Abstract: A plasma treatment container internal member, which is used in a plasma treatment container for performing a process on an object to be treated by plasma, includes an anodic oxide coating formed on a surface of a base material of the plasma treatment container internal member by an anodic oxidation treatment using plasma discharge, and a thermally sprayed film formed on the anodic oxide coating. The anodic oxidation treatment includes immersing the base material in an alkaline organic solvent, and performing the plasma discharge in the alkaline organic solvent.

Abstract: A plasma processing apparatus includes a vacuum evacuable processing chamber; a first electrode for supporting a substrate to be processed in the processing chamber; a processing gas supply unit for supplying a processing gas into a processing space; a plasma excitation unit for generating a plasma by exciting the processing gas in the processing chamber; a first radio frequency power supply unit for supplying a first radio frequency power to the first electrode to attract ions in the plasma to the substrate; and a first radio frequency power amplitude modulation unit for modulating an amplitude of the first radio frequency power at a predetermined interval. The plasma processing apparatus further includes a first radio frequency power frequency modulation unit for modulating a frequency of the first radio frequency power in substantially synchronously with the amplitude modulation of the first radio frequency power.

Abstract: A plasma processing chamber includes a cantilever assembly and at least one vacuum isolation member configured to neutralize atmospheric load. The chamber includes a wall surrounding an interior region and having an opening formed therein. A cantilever assembly includes a substrate support for supporting a substrate within the chamber. The cantilever assembly extends through the opening such that a portion is located outside the chamber. The chamber includes an actuation mechanism operative to move the cantilever assembly relative to the wall.

Abstract: Techniques disclosed herein include apparatus and processes for generating a plasma having a uniform electron density across an electrode used to generate the plasma. An upper electrode (hot electrode), of a capacitively coupled plasma system can include structural features configured to assist in generating the uniform plasma. Such structural features define a surface shape, on a surface that faces the plasma. Such structural features can include a set of concentric rings having an approximately rectangular cross section, and protruding from the surface of the upper electrode. Such structural features can also include nested elongated protrusions having a cross-sectional size and shape, with spacing of the protrusions selected to result in a system that generates a uniform density plasma.

Abstract: According to various embodiments of the disclosure, an apparatus and method for enhanced deposition and etch techniques is described, including a pedestal, the pedestal having at least two electrodes embedded in the pedestal, a showerhead above the pedestal, a plasma gas source connected to the showerhead, wherein the showerhead is configured to deliver plasma gas to a processing region between the showerhead and the substrate and a power source operably connected to the showerhead and the at least two electrodes with plasma being substantially contained in an area which corresponds with one electrode of the at least two electrodes.

Abstract: A plasma reactor (1) for treating a substrate (40), comprises at least two electrodes (20, 30) arranged within the reactor (1) defining an internal process space (13) there between, whereas the two electrodes (20, 30) are located opposed to each other and parallel with respect to a first surface (20a) of the electrodes (20, 30). Further it comprises a gas inlet (11) and a gas outlet (12) for transporting gas in and out of the plasma reactor (1), a radiofrequency generator (21) connected to at least one of the electrodes (20, 30).

Abstract: This invention includes a first filter (27) connected between a susceptor (21) and ground and having a variable impedance, a sensor (28) for detecting an electrical signal based on the state of a plasma (P) generated in a process chamber (11), and a control means (36) for controlling the impedance of the first filter (27) on the basis of a detection result output from the sensor (28). Thus, a preferable plasma distribution to match the object of the plasma process can be realized.

Abstract: A method for manufacturing a plasma processing system is provided. The method includes providing a movable plasma-facing structure configured to surround a plasma that is generated during processing of a substrate. The method also includes disposing a movable electrically conductive structure outside of the movable plasma-facing structure, wherein both structures configured to be deployed and retracted as a single unit to facilitate handling of the substrate. The movable electrically conductive structure is radio frequency (RF) grounded during the plasma processing. During processing, the RF current from the plasma flows to the movable electrically conductive structure through the movable plasma-facing structure during the plasma processing. The method further includes coupling a set of conductive straps to the movable electrically conductive structure.

Abstract: A plasma processing apparatus capable of, over a prolonged period of time, controlling a decrease in the value of a DC current flowing within an accommodating compartment. The plasma processing apparatus comprises an accommodating compartment adapted to accommodate a substrate and perform a plasma treatment thereon, a high-frequency power source adapted to supply high-frequency power to the inside of the accommodating compartment; a DC electrode adapted to apply a DC voltage to the inside of the accommodating compartment, a ground electrode provided within the accommodating compartment and used for the applied DC voltage, and an exhaust unit adapted to evacuate the inside of the accommodating compartment.

Abstract: A method is disclosed for adjusting the composition of plasmas used in plasma doping, plasma deposition and plasma etching techniques. The disclosed method enables the plasma composition to be controlled by modifying the energy distribution of the electrons present in the plasma. Energetic electrons are produced in the plasma by accelerating electrons in the plasma using very fast voltage pulses. The pulses are long enough to influence the electrons, but too fast to affect the ions significantly. Collisions between the energetic electrons and the constituents of the plasma result in changes in the plasma composition. The plasma composition can then be optimized to meet the requirements of the specific process being used. This can entail changing the ratio of ion species in the plasma, changing the ratio of ionization to dissociation, or changing the excited state population of the plasma.

Abstract: A coaxial VHF power coupler includes conductive element inside a hollow cylindrical outer conductor of the power coupler and surrounding an axial section of a hollow cylindrical inner conductor of the power coupler. Respective plural motor drives contacting the hollow cylindrical outer conductor are connected to respective locations of the movable conductive element.

Abstract: Methods, systems, and computer programs are presented for semiconductor manufacturing are provided. One wafer processing apparatus includes: a top electrode; a bottom electrode; a first radio frequency (RF) power source; a second RF power source; a third RF power source; a fourth RF power source; and a switch. The first, second, and third power sources are coupled to the bottom electrode. Further, the switch is operable to be in one of a first position or a second position, where the first position causes the top electrode to be connected to ground, and the second position causes the top electrode to be connected to the fourth RF power source.

Abstract: Plasma is generated using elemental hydrogen, a weak oxidizing agent, and a fluorine containing gas. An inert gas is introduced to the plasma downstream of the plasma source and upstream of a showerhead that directs gas mixture into the reaction chamber where the mixture reacts with the high-dose implant resist. The process removes both the crust and bulk resist layers at a high strip rate, and leaves the work piece surface substantially residue free with low silicon loss.

Abstract: A plasma processing apparatus includes a first electrode and a second electrode so arranged in the upper portion of a processing chamber as to face a mounting table, a gas supply unit for supplying a processing gas between the first electrode and the second electrode, a RF power supply unit for applying a RF power between the first electrode and the second electrode for converting the process gas supplied between the electrodes into a plasma, and a gas exhaust unit for evacuating the inside of the processing chamber to a vacuum level from the lower portion of the processing chamber. Since the electron temperature in the plasma is low near a substrate on the mounting table, damage to the substrate caused by the plasma can be suppressed. In addition, since a metal can be used as a material for the processing chamber, the processing chamber can have good temperature controllability.

Abstract: Plasma uniformity can be improved. An upper electrode 105 for use in a parallel plate type plasma processing apparatus includes a base 105a made of a dielectric material; and a conductive layer 110 formed on at least a part of a surface of the base 105a facing a lower electrode 210 provided in the plasma processing apparatus. Further, the conductive layer 110 having a dense and sparse pattern such that the dense and sparse pattern at an outer portion of the surface of the base 105a facing the lower electrode 210 is denser than at an inner portion thereof.

Abstract: A substrate processing apparatus includes: a depressurizable processing chamber 11; a shaft 26 supporting a facing electrode 24 provided within the processing chamber 11 while allowing the facing electrode 24 to be movable with respect to a mounting electrode 12; a first ring-shaped bellows 31 concentrically installed at an outer peripheral portion of the shaft 26; and a second bellows 32 concentrically installed at an outer peripheral portion of the first bellows 31. The first bellows 31 absorbs a displacement of the facing electrode 24 with respect to a wall surface 13 at a penetration portion where the shaft 26 penetrates the wall surface 13 of the processing chamber 11, and seals the inside of the processing chamber 11 against the ambient atmosphere around the shaft 26. A ring-shaped gas flow path 35 is formed by the first bellows 31 and the second bellows 32.

Abstract: A plasma processing apparatus includes a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate a plasma in the process chamber having a plasma sheath adjacent to the front surface of the workpiece, and an insulating modifier. The insulting modifier is configured to control a shape of a boundary between the plasma and the plasma sheath so a portion of the shape of the boundary is not parallel to a plane defined by a front surface of the workpiece facing the plasma. Controlling the shape of the boundary between the plasma and the plasma sheath enables a large range of incident angles of particles striking the workpiece to be achieved.

Abstract: A method of increasing mean time between cleans of a plasma etch chamber and chamber parts lifetimes is provided. Semiconductor substrates are plasma etched in the chamber while using at least one sintered silicon nitride component exposed to ion bombardment and/or ionized halogen gas. The sintered silicon nitride component includes high purity silicon nitride and a sintering aid consisting of silicon dioxide. A plasma processing chamber is provided including the sintered silicon nitride component. A method of reducing metallic contamination on the surface of a silicon substrate during plasma processing is provided with a plasma processing apparatus including one or more sintered silicon nitride components. A method of manufacturing a component exposed to ion bombardment and/or plasma erosion in a plasma etch chamber, comprising shaping a powder composition consisting of high purity silicon nitride and silicon dioxide and densifying the shaped component.

Abstract: An apparatus and a method comprising same for removing metal oxides from a substrate surface are disclosed herein. In one particular embodiment, the apparatus comprises an electrode assembly that has a housing that is at least partially comprised of an insulating material and having an internal volume and at least one fluid inlet that is in fluid communication with the internal volume; a conductive base connected to the housing comprising a plurality of conductive tips that extend therefrom into a target area and a plurality of perforations that extend therethrough and are in fluid communication with the internal volume to allow for a passage of a gas mixture comprising a reducing gas.

Abstract: A showerhead for a plasma process apparatus for processing substrates, comprising a showerhead body comprising a top plate and a bottom plate defining a cavity in between; a gas inlet formed in the top plate; a perforated plate positioned between the top plate and the bottom plate and dissecting the cavity into an upper gas compartment and a lower gas compartment; and, wherein the bottom plate comprises a plurality of elongated diffusion slots on its lower surface and a plurality of diffusion holes on its upper surface, each of the diffusion holes making fluid connection from the lower gas compartment to more than one of the diffusion slots.

Abstract: A plasma confinement apparatus, and method for confining a plasma are described and which includes, in one form of the invention, a plurality of electrically insulated components which are disposed in predetermined spaced relation, one relative to the others, and surrounding a processing region of a plasma processing apparatus, and wherein a plurality of passageways are defined between the respective insulated components; and at least one electrically conductive and grounded component forms an electrical field shielding for the processing region.

Abstract: A plasma reactor having a reactor chamber and an electrostatic chuck with a surface for holding a workpiece inside the chamber includes a backside gas pressure source coupled to the electrostatic chuck for applying a thermally conductive gas under a selected pressure into a workpiece-surface interface formed whenever a workpiece is held on the surface and an evaporator inside the electrostatic chuck and a refrigeration loop having an expansion valve for controlling flow of coolant through the evaporator. The reactor further includes a temperature sensor in the electrostatic chuck and a memory storing a schedule of changes in RF power or wafer temperature.

Abstract: A plasma processing apparatus includes a processing container, an exhaust unit, an exhaust plate, an RF power application unit connected to a second electrode but not connected to the first electrode and configured to apply an RF power with a single frequency, the second electrode being connected to no power supply that applies an RF power other than the RF power with the single frequency, a DC power supply connected to the first electrode but not connected to the second electrode, the first electrode being connected to no power supply that applies an RF power, and a conductive member within the process container grounded to release through plasma a current caused by the DC voltage, the conductive member supported by the first shield part and laterally protruding therefrom only at a position that is located, in a height-wise direction, between a mount face and the exhaust plate and below a bottom of a focus ring.

Abstract: Methods and apparatus for isotropically etching a metal from a work piece, while recovering and reconstituting the chemical etchant are described. Various embodiments include apparatus and methods for etching where the recovered and reconstituted etchant is reused in a continuous loop recirculation scheme. Steady state conditions can be achieved where these processes are repeated over and over with occasional bleed and feed to replenish reagents and/or adjust parameters such as pH, ionic strength, salinity and the like.

Abstract: A tray for a dry etching apparatus includes substrate accommodation holes penetrating a thickness direction and a substrate support portion supporting an outer peripheral edge portion of a lower surface of a substrate. An upper portion includes a tray support surface supporting a lower surface of the tray, substrate placement portions on each of which a lower surface of the substrate to be placed, and a concave portion for accommodating the substrate support portion. A dc voltage applying mechanism applies a dc voltage to an electrostatic attraction electrode. A heat conduction gas supply mechanism supplies a heat conduction gas between the substrate and substrate placement portion. During carrying of the substrate, the outer peripheral edge of the lower surface of the substrate is supported by the substrate accommodation hole. During processing of the substrate, the substrate support portion is accommodated in the concave portion.

Abstract: Embodiments of impedance matching networks are provided herein. In some embodiments, an impedance matching network may include a coaxial resonator having an inner and an outer conductor. A tuning capacitor may be provided for variably controlling a resonance frequency of the coaxial resonator. The tuning capacitor may be formed by a first tuning electrode and a second tuning electrode and an intervening dielectric, wherein the first tuning electrode is formed by a portion of the inner conductor. A load capacitor may be provided for variably coupling energy from the inner conductor to a load. The load capacitor may be formed by the inner conductor, an adjustable load electrode, and an intervening dielectric.

Abstract: A showerhead electrode, a gasket set and an assembly thereof in plasma reaction chamber for etching semiconductor substrates are provided with improved a gas injection hole pattern, positioning accuracy and reduced warping, which leads to enhanced uniformity of plasma processing rate. A method of assembling the inner electrode and gasket set to a supporting member includes simultaneous engagement of cam locks.

Abstract: At the time of plasma igniting or during plasma processing, only optimizing the distance between electrodes in each case caused a limitation to the prevention of charging damage. To resolve this, a novel plasma processing method employs a plasma processing apparatus which includes an upper electrode to which first high-frequency power is applied, a lower electrode to which second high-frequency power is applied, and a lift mechanism for controlling the spacing between the upper and lower electrodes. The first high-frequency power is applied to the upper electrode to cause plasma igniting. The method is adapted to make the spacing between the upper and lower electrodes larger at least at the time of plasma extinction than during plasma processing of a wafer on the lower electrode.

Abstract: Prior to wafer processing, pressure ratio control is executed on a divided flow rate adjustment means so as to adjust the flow rates of divided flows to achieve a target pressure ratio with regard to the pressures in the individual branch passages. As the processing gas from a processing gas supply means is diverted into first and second branch pipings under the pressure ratio control and the pressures in the branch passages then stabilize, the control on the divided flow rate adjustment means is switched to steady pressure control for adjusting the flow rates of the divided flows so as to hold the pressure in the first branch passage at the level achieved in the stable pressure condition. Only after the control is switched to the steady pressure control, an additional gas is delivered into the second branch passage via an additional gas supply means.

Abstract: A plasma processing chamber includes a cantilever assembly and at least one vacuum isolation member configured to neutralize atmospheric load. The chamber includes a wall surrounding an interior region and having an opening formed therein. A cantilever assembly includes a substrate support for supporting a substrate within the chamber. The cantilever assembly extends through the opening such that a portion is located outside the chamber. The chamber includes an actuation mechanism operative to move the cantilever assembly relative to the wall.

Abstract: An arrangement for measuring process parameters within a processing chamber is provided. The arrangement includes a probe arrangement disposed in an opening of an upper electrode. Probe arrangement includes a probe head, which includes a head portion and a flange portion. The arrangement also includes an o-ring disposed between the upper electrode and the flange portion. The arrangement further includes a spacer made of an electrically insulative material positioned between the head portion and the opening of the upper electrode to prevent the probe arrangement from touching the upper electrode. The spacer includes a disk portion configured for supporting an underside of the flange portion. The spacer also includes a hollow cylindrical portion configured to encircle the head portion. The spacer forms a right-angled path between the o-ring and an opening to the processing chamber to prevent direct line-of-sight path between the o-ring and the opening to the processing chamber.

Abstract: A plasma processing device includes a first electrode plate (3), a second electrode plate (4), a matching device (8), a power distribution device (9) and a power supply device (1). The first electrode plate (3) includes at least two sub-electrode plates (31, 32) insulated from each other; the power supply device (1) is connected to the power distribution device (9) via the matching device (8); the power distribution device (9) is connected to the first electrode plate (3) for inputting and distributing the power of the power supply device (1) to each of the sub-electrode plates (31, 32); the power distribution device (9) at least includes capacitors (C1, C2) and/or inductances (L1, L2).

Abstract: The plasma processing apparatus includes: a processing chamber an inside of which is airtightly closable; a process gas supplying mechanism which supplies a process gas into the processing chamber; an exhaust mechanism which evacuates the inside of the processing chamber; a plasma generating mechanism which generates plasma from the process gas; a holding stage which is provided in the processing chamber and configured such that a substrate to be processed and a focus ring provided to surround the substrate to be processed are held on a same plane; a temperature control mechanism which adjusts a temperature of the holding stage; and an electrostatic chuck which is provided on a top surface of the holding stage and comprises an adsorbing electrode extending to a portion under the focus ring.

Abstract: A movable plasma confinement structure configured for confining plasma in a plasma processing chamber during plasma processing of a substrate is provided. The movable plasma confinement structure includes a movable plasma-facing structure configured to surround the plasma. The movable plasma confinement structure also includes a movable electrically conductive structure disposed outside of the movable plasma-facing structure and configured to be deployed and retracted with the movable plasma-facing structure as a single unit to facilitate handling of the substrate. The movable electrically conductive structure is radio frequency (RF) grounded during the plasma processing. The movable plasma-facing structure is disposed between the plasma and the movable electrically conductive structure during the plasma processing such that RF current from the plasma flows to the movable electrically conductive structure through the movable plasma-facing structure during the plasma processing.

Abstract: In a plasma processing apparatus including a vacuum-evacuable processing chamber, a first lower electrode for supporting a substrate to be processed thereon is disposed in the processing chamber and an upper electrode is disposed above the first lower electrode to face the first lower electrode. Further, a second lower electrode is disposed under the first lower electrode while being electrically isolated from the first lower electrode. A processing gas supply unit supplies a processing gas into a space between the upper electrode and the first lower electrode. A first high frequency power supply unit applies a first high frequency power of a first frequency to the first lower electrode, and a second high frequency power supply unit applies a second high frequency power of a second frequency higher than the first frequency to the second lower electrode.

Abstract: A flexible polymer or elastomer coated RF return strap to be used in a plasma chamber to protect the RF strap from plasma generated radicals such as fluorine and oxygen radicals, and a method of processing a semiconductor substrate with reduced particle contamination in a plasma processing apparatus. The coated RF strap minimizes particle generation and exhibits lower erosion rates than an uncoated base component. Such a coated member having a flexible coating on a conductive flexible base component provides an RF ground return configured to allow movement of one or more electrodes in an adjustable gap capacitively coupled plasma reactor chamber.

Abstract: An apparatus for determining an endpoint of a process by measuring a thickness of a layer is provided. The layer is disposed on the surface by a prior process. The apparatus includes means for providing a sensor that is coplanar with the surface, wherein the sensor is configured to measure the thickness. The apparatus also includes means for exposing the plasma chamber to a plasma, wherein the thickness is changed by the exposing, and means for determining the thickness as a function of time. The apparatus further includes means for ascertaining a steady state condition in the thickness, the steady state condition being characterized by a substantially stable measurement of the thickness, a start of the steady state condition representing the endpoint.

Abstract: A plate of substantially uniform thickness is formed from an electrically conductive material. The plate has a top surface defined to support a part to be measured. The plate has a bottom surface defined to be connected to a radiofrequency (RF) transmission rod such that RF power can be transmitted through the RF transmission rod to the plate. The plate is defined to have a number of holes cut vertically through the plate at a corresponding number of locations that underlie embedded conductive material items in the part to be measured when the part is positioned on the top surface of the plate.

Abstract: A system and method for controlling plasma. The system includes a semiconductor chamber comprising a powered electrode, another electrode, and an adjustable coupling to ground circuit. The powered electrode is configured to receive a wafer or substrate. There is at least one grounded electrode configured to generate an electrical connection with the powered electrode. At least one of the grounded electrodes is electrically coupled to the adjustable coupling to ground circuit. The adjustable coupling to ground circuit is configured to modify the impedance of the grounded electrode. The ion energy of the plasma is controlled by the adjustable coupling to ground circuit.

Abstract: In a plasma processing apparatus, a first electrode is attached to a grounded evacuable processing chamber via an insulating material or a space and a second electrode disposed in parallel with the first electrode spaced apart therefrom in the processing chamber, the second electrode supporting a target substrate to face the first electrode. A first radio frequency power supply unit applies a first radio frequency power of a first frequency to the second electrode, and a second radio frequency power supply unit applies a second radio frequency power of a second frequency lower than the first frequency to the second electrode. Further, a processing gas supply unit supplies a processing gas to a processing space formed by the first and the second electrode and a sidewall of the processing chamber. Moreover, an inductor electrically is connected between the first electrode and a ground potential.

Abstract: A mounting table for use in a plasma processing apparatus, on which a substrate is mounted, includes: a conductive member connected to a high frequency power supply and a high frequency power supply; a dielectric layer embedded in a central portion on an upper surface of the conductive member; and an electrostatic chuck mounted on the dielectric layer. Further, the electrostatic chuck is connected to a high voltage DC power supply and includes an electrode film satisfying following conditions: ?/z?85 (where ?=(?v/(??f))1/2) and, a surface resistivity of the substrate>a surface resistivity of a central portion of the electrode film.

Abstract: An apparatus for fabricating a semiconductor device includes: a chamber having a sidewall; a susceptor in the chamber; a plurality of injection holes in the sidewall, the plurality of injection holes disposed along a horizontal direction; and a plurality of exhaust holes in the sidewall, the plurality of exhaust holes disposed along the horizontal direction and facing the plurality of injection holes with the susceptor therebetween.

Abstract: A plasma processing apparatus includes a process container configured to accommodate a target substrate and to be vacuum-exhausted. A first electrode and a second electrode are disposed opposite each other within the process container. The first electrode includes an outer portion and an inner portion both facing the second electrode such that the outer portion surrounds the inner portion. An RF power supply is configured to apply an RF power to the outer portion of the first electrode. A DC power supply is configured to apply a DC voltage to the inner portion of the first electrode. A process gas supply unit is configured to supply a process gas into the process container, wherein plasma of the process gas is generated between the first electrode and the second electrode.

Abstract: The invention provides a plasma processing apparatus which is based upon a dry etching apparatus and which can inhibit the contamination of a work piece caused by sputtering onto a wall of a vacuum chamber, the occurrence of a foreign matter, the increase of a running cost for replacing the walls of the vacuum chamber and the deterioration of a rate of operation.

Abstract: A plasma confinement assembly for a semiconductor processing chamber is provided. The assembly includes a plurality of confinement rings disposed over each other, and each of the plurality of confinement rings is separated by a space. A plunger moveable in a plane substantially orthogonal to the confinement rings. A proportional adjustment support is provided and coupled to the plunger. The proportional adjustment support is configured to move the confinement rings to one or more positions, such that the plunger is settable in positions along the plane. The positions define the space separating confinement rings, and the space is proportionally set between the confinement rings. The proportional adjustment support is defined by a plurality of support legs, and each of the support legs is pivotably interconnected with at least one other support leg.