Having Glow Discharge Electrode Gas Energizing Means Patents (Class 156/345.43)
  • Patent number: 11875975
    Abstract: Device for hydrogen sulfide plasma dissociation includes a plasma chemical reactor including an arc plasma generator that has a cathode and an anode; the anode having a working surface for contacting hydrogen sulfide plasma, wherein the working surface is made from a material that includes stainless steel, tungsten or molybdenum; the cathode having a tip for arc attachment where a cathode spot is formed, wherein the cathode tip is made from pure tungsten, pure molybdenum, a tungsten or molybdenum alloy with tungsten as a major component or a composite material in which tungsten or molybdenum is the major component; and a flow path configured to have an inlet for gaseous hydrogen sulfide for dissociation in plasma into hydrogen and sulfur, and an outlet for gaseous products of hydrogen sulfide plasma dissociation. Optionally, the alloy or composite material has up to 10% low work function elements (thorium, cerium, lanthanum, or zirconium).
    Type: Grant
    Filed: September 9, 2020
    Date of Patent: January 16, 2024
    Assignee: REDSHIFT ENERGY, INC.
    Inventors: Alexander Gutsol, Yuriy Mirochnik
  • Patent number: 11873553
    Abstract: A component comprises a film containing yttrium oxide. A cross section of the film has a first portion, a second portion, and a third portion, and the first to third portions are separated from each other by 0.5 mm or more. A Vickers hardness B1 measured in the first portion, a Vickers hardness B2 measured in the second portion, a Vickers hardness B3 measured in the third portion, and an average value A of the Vickers hardnesses B1 to B3 are numbers satisfying 0.8A?B1?1.2A, 0.8A?B2?1.2A, and 0.8A?B3?1.2A.
    Type: Grant
    Filed: February 28, 2020
    Date of Patent: January 16, 2024
    Assignees: SHIBAURA INSTITUTE OF TECHNOLOGY, TOSHIBA MATERIALS CO., LTD.
    Inventors: Atsushi Yumoto, Tomohiro Sugano, Takashi Hino, Tetsuo Inoue, Shuichi Saito
  • Patent number: 11869747
    Abstract: Atomic layer etching of a substrate using a wafer scale wave of precisely controlled electrons is presented. A volume of gaseous plasma including diluent and reactive species and electrons of a uniform steady state composition is generated in a positive column of a DC plasma proximate the substrate. A corrosion layer is formed on the substrate by adsorption of the reactive species to atoms at the surface of the substrate. The substrate is positively biased to draw electrons from the volume to the surface of the substrate and impart an energy to the electrons so to stimulate electron transitions in the corrosion layer species, resulting in ejection of the corrosion layer species via electron stimulation desorption (ESD). The substrate is negatively biased to repel the electrons from the surface of the substrate back to the volume, followed by a zero bias to restore the steady state composition of the volume.
    Type: Grant
    Filed: January 4, 2023
    Date of Patent: January 9, 2024
    Assignee: VELVETCH LLC
    Inventors: Samir John Anz, David Irwin Margolese, William Andrew Goddard, Stewart Francis Sando
  • Patent number: 11854772
    Abstract: A plasma processing apparatus according to an exemplary embodiment includes a processing container, a stage, a dielectric plate, an upper electrode, an introduction part, a driving shaft, and an actuator. The stage is provided in the processing container. The dielectric plate is provided above the stage via a space in the processing container. The upper electrode has flexibility, is provided above the dielectric plate, and provides a gap between the dielectric plate and the upper electrode. The introduction part is an introduction part of radio frequency waves that are VHF waves or UHF waves, is provided at a horizontal end portion of the space. The driving shaft is coupled to the upper electrode on a central axial line of the processing container. The actuator is configured to move the driving shaft in a vertical direction.
    Type: Grant
    Filed: November 26, 2019
    Date of Patent: December 26, 2023
    Assignees: TOKYO ELECTRON LIMITED, TOHOKU UNIVERSITY
    Inventor: Masaki Hirayama
  • Patent number: 11837443
    Abstract: A faceplate of a showerhead has a bottom side that faces a plasma generation region and a top side that faces a plenum into which a process gas is supplied during operation of a substrate processing system. The faceplate includes apertures formed through the bottom side and openings formed through the top side. Each of the apertures is formed to extend through a portion of an overall thickness of the faceplate to intersect with at least one of the openings to form a corresponding flow path for process gas through the faceplate. Each of the apertures has a cross-section that has a hollow cathode discharge suppression dimension in at least one direction. Each of the openings has a cross-section that has a smallest cross-sectional dimension that is greater than the hollow cathode discharge suppression dimension.
    Type: Grant
    Filed: November 29, 2022
    Date of Patent: December 5, 2023
    Assignee: Lam Research Corporation
    Inventors: Michael John Selep, Patrick G. Breiling, Karl Frederick Leeser, Timothy Scott Thomas, David William Kamp, Sean M. Donnelly
  • Patent number: 11814724
    Abstract: Certain embodiments of the present disclosure relate to chamber liners, processing chambers that include chamber liners, and methods of using the same. In one embodiment, a method of operating a processing chamber includes causing a chamber liner within the processing chamber to move to a loading position to allow a substrate to be inserted through an access port of the processing chamber into an interior volume of the processing chamber. The method further includes causing the chamber liner to move to an operation position that blocks the access port after the substrate has been inserted into the interior volume. The method further includes generating a plasma using a cathode assembly.
    Type: Grant
    Filed: October 31, 2022
    Date of Patent: November 14, 2023
    Assignee: APPLIED MATERIALS, INC.
    Inventors: James D. Carducci, Kenneth S. Collins, Kartik Ramaswamy
  • Patent number: 11810757
    Abstract: Atomic layer etching of a substrate using a wafer scale wave of precisely controlled electrons is presented. A volume of gaseous plasma including diluent and reactive species and electrons of a uniform steady state composition is generated in a positive column of a DC plasma proximate the substrate. A corrosion layer is formed on the substrate by adsorption of the reactive species to atoms at the surface of the substrate. The substrate is positively biased to draw electrons from the volume to the surface of the substrate and impart an energy to the electrons so to stimulate electron transitions in the corrosion layer species, resulting in ejection of the corrosion layer species via electron stimulation desorption (ESD). The substrate is negatively biased to repel the electrons from the surface of the substrate back to the volume, followed by a zero bias to restore the steady state composition of the volume.
    Type: Grant
    Filed: January 4, 2023
    Date of Patent: November 7, 2023
    Assignee: VELVETCH LLC
    Inventors: Samir John Anz, David Irwin Margolese, William Andrew Goddard, Stewart Francis Sando
  • Patent number: 11803118
    Abstract: Methods and apparatus leverage dielectric barrier discharge (DBD) plasma to treat samples for surface modification prior to photomask application and for photomask cleaning. In some embodiments, a method of treating a surface with AP plasma includes igniting plasma over an ignition plate where the AP plasma is formed by one or more plasma heads of an AP plasma reactor positioned above the ignition plate, monitoring characteristics of the AP plasma with an optical emission spectrometer (OES) sensor to determine if stable AP plasma is obtained and, if so, moving the AP reactor over a central opening of an assistant plate where the central opening contains a sample under treatment and where the assistant plate reduces AP plasma arcing on the sample during treatment. The AP reactor scans back and forth over the central opening of the assistant plate while maintaining stabilized AP plasma to treat the sample.
    Type: Grant
    Filed: April 12, 2021
    Date of Patent: October 31, 2023
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Banqiu Wu, Khalid Makhamreh, Eliyahu Shlomo Dagan
  • Patent number: 11776788
    Abstract: Embodiments provided herein generally include apparatus, plasma processing systems and methods for boosting a voltage of an electrode in a processing chamber. An example plasma processing system includes a processing chamber, a plurality of switches, an electrode disposed in the processing chamber, a voltage source, and a capacitive element. The voltage source is selectively coupled to the electrode via one of the plurality of switches. The capacitive element is selectively coupled to the electrode via one of the plurality of switches. The capacitive element and the voltage source are coupled to the electrode in parallel. The plurality of switches are configured to couple the capacitive element and the voltage source to the electrode during a first phase, couple the capacitive element and the electrode to a ground node during a second phase, and couple the capacitive element to the electrode during a third phase.
    Type: Grant
    Filed: June 28, 2021
    Date of Patent: October 3, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Yang Yang, Yue Guo, Kartik Ramaswamy
  • Patent number: 11759980
    Abstract: A method of removing a lens forming material deposited on a lens forming surface (1) of a reusable glass mold for forming ophthalmic lenses, in particular contact lenses or intraocular lenses, comprises the steps of providing a plasma (2), exposing the lens forming surface (1) of the reusable glass mold to the plasma (2) for removing the lens forming material deposited on the lens forming surface (1). The plasma (2) is generated under atmospheric pressure and potential-free, or is generated under reduced pressure.
    Type: Grant
    Filed: October 29, 2020
    Date of Patent: September 19, 2023
    Assignee: Alcon Inc.
    Inventors: Stefan Kastl, Steffen Paulekuhn, Stephan Pirl, Gabriela Cocora
  • Patent number: 11756771
    Abstract: A tunable upper plasma exclusion zone (PEZ) ring adjusts a distance of plasma during processing in a processing chamber and includes: a lower surface that includes: a horizontal portion; and an upwardly tapered outer portion that is conical and that extends outwardly and upwardly from the horizontal portion at an upward taper angle of about 5° to 50° with respect to the horizontal portion, where an outer diameter of the upwardly tapered outer portion is greater than 300 millimeters (mm), and where an inner diameter where the upwardly tapered outer portion begins to extend upwardly is less than 300 mm. A controller is to, during processing of a 300 mm circular substrate, adjust the distance of plasma for treatment of the 300 mm circular substrate at least one of radially inward and radially outward using the tunable upper PEZ ring.
    Type: Grant
    Filed: January 29, 2021
    Date of Patent: September 12, 2023
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Jack Chen, Adam Liron, Gregory Sexton
  • Patent number: 11732344
    Abstract: The present disclosure relates to a lateral-type vacuum deposition apparatus, and a source block and a source assembly for the same. Disclosed are a source block that may simplify a lateral-type vacuum deposition apparatus and a lateral-type vacuum deposition apparatus using the same. The source block has a predetermined shape. In the lateral-type vacuum deposition apparatus, the substrate and the source block may face away each other. Accordingly, the lateral-type vacuum deposition apparatus including the source block is free of a conduit for transferring a vaporized source to a nozzle, thereby simplifying a structure of the apparatus. In particular, the source block may have a visible light transmittance of at least about 10% and may exhibit excellent shape maintenance ability during a lateral-type vacuum deposition process.
    Type: Grant
    Filed: October 8, 2019
    Date of Patent: August 22, 2023
    Assignee: LG Display Co., Ltd.
    Inventors: Ji-Man Seo, Hoyoung Jeong, Jaewook Park
  • Patent number: 11728143
    Abstract: Process kits, processing chambers, and methods for processing a substrate are provided. The process kit includes an edge ring, a sliding ring, an adjustable tuning ring, and an actuating mechanism. The edge ring has a first ring component interfaced with a second ring component that is movable relative to the first ring component forming a gap therebetween. The sliding ring is positioned beneath the second ring component of the edge ring. The adjustable tuning ring is positioned beneath the sliding ring. The actuating mechanism is interfaced with the lower surface of the adjustable tuning ring and configured to actuate the adjustable tuning ring such that the gap between the first and second ring components is varied. In one or more examples, the sliding ring includes a matrix and a coating, the matrix contains an electrically conductive material and the coating contains an electrically insulting material.
    Type: Grant
    Filed: September 25, 2020
    Date of Patent: August 15, 2023
    Assignee: APPLIED MATERIALS, INC.
    Inventor: Yogananda Sarode Vishwanath
  • Patent number: 11725280
    Abstract: Methods of forming metal silicon oxide layers and metal silicon oxynitride layers are disclosed. Exemplary methods include providing a silicon precursor to the reaction chamber for a silicon precursor pulse period, providing a first metal precursor to the reaction chamber for a first metal precursor pulse period, and providing a first reactant to the reaction chamber for a first reactant pulse period, wherein the silicon precursor pulse period and the first metal precursor pulse period overlap.
    Type: Grant
    Filed: August 23, 2021
    Date of Patent: August 15, 2023
    Assignee: ASM IP Holding B.V.
    Inventors: Takashi Yoshida, René Vervuurt
  • Patent number: 11694908
    Abstract: Exemplary semiconductor processing chambers may include a gasbox including a first plate having a first surface and a second surface opposite to the first surface. The first plate of the gasbox may define a central aperture that extends from the first surface to the second surface. The first plate may define an annular recess in the second surface. The first plate may define a plurality of apertures extending from the first surface to the annular recess in the second surface. The gasbox may include a second plate characterized by an annular shape. The second plate may be coupled with the first plate at the annular recess to define a first plenum within the first plate.
    Type: Grant
    Filed: October 22, 2020
    Date of Patent: July 4, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Rahul Rajeev, Yunzhe Yang, Abhijit A. Kangude, Kedar Joshi
  • Patent number: 11642161
    Abstract: The invention relates to a treatment device for dielectric harrier discharge plasma treatment of a wound surface or skin surface, having: a flexible, planar electrode assembly with at least one planar electrode (6, 6?) and a dielectric layer (5) which at least partially embeds the at least one electrode (6, 6?), has a contact side (7) facing the wound surface or skin surface and electrically shields the planar electrode (6, 6?) from the wound surface or skin surface such that only a dielectric barrier current can flow from the electrode (6, 6?) to the wound surface or skin surface; and a control device (2) which has a separate housing (25) and via which the electrode (6, 6?) can be connected to an operating voltage.
    Type: Grant
    Filed: December 20, 2017
    Date of Patent: May 9, 2023
    Assignee: CINOGY GMBH
    Inventors: Mirko Hahnl, Karl-Otto Storck, Leonhard Trutwig, Dirk Wandke
  • Patent number: 11600739
    Abstract: An apparatus for patterned processing includes a source of input gas, a source of energy suitable for generating a plasma from the input gas in a plasma region and a grounded sample holder configured for receiving a solid sample. The apparatus includes a mask arranged between the plasma region and the grounded sample holder, the mask having a first face oriented toward the plasma region and a second face oriented toward a surface of the solid sample to be processed, the mask including a mask opening extending from the first face to the second face, and an electrical power supply adapted for applying a direct-current bias voltage to the mask, and the mask opening being dimensioned and shaped so as to generate spatially selective patterned processing on the surface of the solid sample.
    Type: Grant
    Filed: May 18, 2018
    Date of Patent: March 7, 2023
    Assignees: TOTAL SA, ECOLE POLYTECHNIQUE, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
    Inventors: Bastien Bruneau, Erik Johnson, Pavel Bulkin, Nada Habka, Gilles Poulain, Nacib Benmammar
  • Patent number: 11578407
    Abstract: A film-forming apparatus for forming a predetermined film on a substrate by plasma ALD includes a chamber, a stage, a shower head having an upper electrode and a shower plate insulated from the upper electrode, a first high-frequency power supply connected to the upper electrode, and a second high-frequency power supply connected to an electrode contained in the stage. A high-frequency power is supplied from the first high-frequency power supply to the upper electrode, thereby forming a high-frequency electric field between the upper electrode and the shower plate and generating a first capacitively coupled plasma. A high-frequency power is supplied from the second high-frequency power supply to the electrode, thereby forming a high-frequency electric field between the shower plate and the electrode in the stage and generating a second capacitively coupled plasma that is independent from the first capacitively coupled plasma.
    Type: Grant
    Filed: April 9, 2019
    Date of Patent: February 14, 2023
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Jun Yamawaku
  • Patent number: 11574800
    Abstract: A workpiece processing apparatus allowing independent control of the voltage applied to the shield ring and the workpiece is disclosed. The workpiece processing apparatus includes a platen. The platen includes a dielectric material on which a workpiece is disposed. A bias electrode is disposed beneath the dielectric material. A shield ring, which is constructed from a metal, ceramic, semiconductor or dielectric material, is arranged around the perimeter of the workpiece. A ring electrode is disposed beneath the shield ring. The ring electrode and the bias electrode may be separately powered. This allows the surface voltage of the shield ring to match that of the workpiece, which causes the plasma sheath to be flat. Additionally, the voltage applied to the shield ring may be made different from that of the workpiece to compensate for mismatches in geometries. This improves uniformity of incident angles along the outer edge of the workpiece.
    Type: Grant
    Filed: April 17, 2020
    Date of Patent: February 7, 2023
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Alexandre Likhanskii, Maureen Petterson, John Hautala, Anthony Renau, Christopher A. Rowland, Costel Biloiu
  • Patent number: 11538660
    Abstract: A plasma processing apparatus includes; a chamber, a lower electrode disposed within the chamber and including a lower surface and an opposing upper surface configured to seat a wafer, an RF rod disposed on the lower surface of the lower electrode and extending in a vertical direction. The RF plate includes a first portion contacting the lower surface of the lower electrode, a second portion protruding from the first portion towards the RF rod, and a third portion extending from the second portion to connect the RF rod. A grounding electrode is spaced apart from the RF plate and at least partially surrounds a side wall of the RF rod and a side wall of the second portion of the RF plate. The grounding electrode includes a first grounding electrode facing each of the side wall of the RF rod and the second portion of the RF plate, and a second grounding electrode at least partially surrounding the first grounding electrode, and configured to horizontally rotate.
    Type: Grant
    Filed: April 27, 2021
    Date of Patent: December 27, 2022
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yoong Chung, Nam Kyun Kim, Naohiko Okunishi, Kyung-Sun Kim, Seung Bo Shim, Sang-Ho Lee, Kang Min Jeon
  • Patent number: 11532463
    Abstract: A processing chamber may include a gas distribution member, a metal ring member below the gas distribution member, and an isolating assembly coupled with the metal ring member and isolating the metal ring member from the gas distribution member. The isolating assembly may include an outer isolating member coupled with the metal ring member. The outer isolating member may at least in part define a chamber wall. The isolating assembly may further include an inner isolating member coupled with the outer isolating member. The inner isolating member may be disposed radially inward from the metal ring member about an central axis of the processing chamber. The inner isolating member may define a plurality of openings configured to provide fluid access into a radial gap between the metal ring member and the inner isolating member.
    Type: Grant
    Filed: July 22, 2020
    Date of Patent: December 20, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Vishwas Kumar Pandey, Vinay K. Prabhakar, Bushra Afzal, Badri N. Ramamurthi, Juan Carlos Rocha-Alvarez
  • Patent number: 11532458
    Abstract: In the present invention, a high-voltage side electrode component further includes a conductive film disposed on an upper surface of a dielectric electrode independently of a metal electrode. The conductive film is disposed between at least one gas ejection port and the metal electrode in plan view, and the conductive film is set to ground potential.
    Type: Grant
    Filed: May 30, 2018
    Date of Patent: December 20, 2022
    Assignee: TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYSTEMS CORPORATION
    Inventors: Ren Arita, Kensuke Watanabe, Shinichi Nishimura
  • Patent number: 11515124
    Abstract: A faceplate of a showerhead has a bottom side that faces a plasma generation region and a top side that faces a plenum into which a process gas is supplied during operation of a substrate processing system. The faceplate includes apertures formed through the bottom side and openings formed through the top side. Each of the apertures is formed to extend through a portion of an overall thickness of the faceplate to intersect with at least one of the openings to form a corresponding flow path for process gas through the faceplate. Each of the apertures has a cross-section that has a hollow cathode discharge suppression dimension in at least one direction. Each of the openings has a cross-section that has a smallest cross-sectional dimension that is greater than the hollow cathode discharge suppression dimension.
    Type: Grant
    Filed: March 24, 2021
    Date of Patent: November 29, 2022
    Assignee: Lam Research Corporation
    Inventors: Michael John Selep, Patrick G. Breiling, Karl Frederick Leeser, Timothy Scott Thomas, David William Kamp, Sean M. Donnelly
  • Patent number: 11404250
    Abstract: An edge ring, for a plasma etcher, may include a circular bottom portion with an opening sized to receive an electrostatic chuck supporting a semiconductor device, and a circular top portion integrally connected to a first top part of the circular bottom portion. The edge ring may include a circular chamfer portion integrally connected to a second top part of the circular bottom portion and integrally connected to a side of the circular top portion. The circular chamfer portion may include an inner surface that is angled radially outward from the opening at less than ninety degrees.
    Type: Grant
    Filed: July 8, 2020
    Date of Patent: August 2, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chien-Yu Wang, Hung-Bin Lin, Shih-Ping Hong, Shih-Hao Chen, Chen-Hsiang Lu, Ping-Chung Lee
  • Patent number: 11367593
    Abstract: The present disclosure relates to apparatus and methods that manipulate the amplitude and phase of the voltage or current of an edge ring. The apparatus includes an electrostatic chuck having a chucking electrode embedded therein for chucking a substrate to the electrostatic chuck. The apparatus further includes a baseplate underneath the substrate to feed RF power to the substrate. The apparatus further includes an edge ring disposed over the electrostatic chuck. The apparatus further includes an edge ring electrode located underneath the edge ring. The apparatus further includes a radio frequency (RF) circuit including a first variable capacitor coupled to the edge ring electrode.
    Type: Grant
    Filed: August 14, 2020
    Date of Patent: June 21, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Linying Cui, James Rogers
  • Patent number: 11345996
    Abstract: A liner assembly for a substrate processing system includes a first liner and a second liner. The first liner includes an annular body and an outer peripheral surface including a first fluid guide. The first fluid guide is curved about a circumferential line extending around the first liner. The second liner includes an annular body, an outer rim, an inner rim, a second fluid guide extending between the outer rim and the inner rim, and a plurality of partition walls extending outwardly from the second fluid guide. The second fluid guide is curved about the circumferential line when the first and second liners are positioned within the processing system.
    Type: Grant
    Filed: December 28, 2018
    Date of Patent: May 31, 2022
    Assignee: GlobalWafers Co., Ltd.
    Inventors: Arash Abedijaberi, Shawn George Thomas
  • Patent number: 11312123
    Abstract: A vacuum lamination system includes a film supply assembly, a film collection assembly, a lower lamination body, an upper lamination body, an air extractor, a moving assembly and a cutting assembly. The lower lamination body includes a first casing base and a lower heating assembly vertically movable and disposed in the first casing base. The lower heating assembly carries and moves the substrate so that the substrate is substantially flush with a top surface of the first casing base or retracted into the first casing base. The upper lamination body is vertically movable and disposed above the lower lamination body and includes an upper casing and an upper heating assembly disposed on the upper casing. The air extractor is connected to the lower lamination body. The moving assembly changes a height of a portion of the film. The cutting assembly cuts a portion of the film laminated onto the substrate.
    Type: Grant
    Filed: July 8, 2020
    Date of Patent: April 26, 2022
    Assignee: ELEADTK CO., LTD.
    Inventors: Ching-Nan Chang, Sheng-Yu Lin, Ming-Chan Chen
  • Patent number: 11251181
    Abstract: Embodiments of the disclosure provide a semiconductor device including a substrate, an insulating layer formed over the substrate, a plurality of fins formed vertically from a surface of the substrate, the fins extending through the insulating layer and above a top surface of the insulating layer, a gate structure formed over a portion of fins and over the top surface of the insulating layer, a source/drain structure disposed adjacent to opposing sides of the gate structure, the source/drain structure contacting the fin, a dielectric layer formed over the insulating layer, a first contact trench extending a first depth through the dielectric layer to expose the source/drain structure, the first contact trench containing an electrical conductive material, and a second contact trench extending a second depth into the dielectric layer, the second contact trench containing the electrical conductive material, and the second depth is greater than the first depth.
    Type: Grant
    Filed: December 16, 2019
    Date of Patent: February 15, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wen-Che Tsai, Min-Yann Hsieh, Hua Feng Chen, Kuo-Hua Pan
  • Patent number: 11227745
    Abstract: Some embodiments include a plasma sheath control system that includes an RF power supply producing an A sinusoidal waveform with a frequency greater than 20 kHz and a peak voltage greater than 1 kV and a plasma chamber electrically coupled with the RF power supply, the plasma chamber having a plurality of ions that are accelerated into a surface disposed with energies greater than about 1 kV, and the plasma chamber produces a plasma sheath within the plasma chamber from the sinusoidal waveform. The plasma sheath control system includes a blocking diode electrically connected between the RF power supply and the plasma chamber and a capacitive discharge circuit electrically coupled with the RF power supply, the plasma chamber, and the blocking diode; the capacitive discharge circuit discharges capacitive charges within the plasma chamber with a peak voltage greater than 1 kV and a discharge time that less than 250 nanoseconds.
    Type: Grant
    Filed: August 9, 2019
    Date of Patent: January 18, 2022
    Assignee: Eagle Harbor Technologies, Inc.
    Inventors: Kenneth Miller, Timothy Ziemba, James Prager, Ilia Slobodov
  • Patent number: 11201035
    Abstract: Described herein are technologies related to a radical source with a housing that includes a plasma cavity that is designed to contain a plasma created by a plasma generator. The housing has at least one gas injector designed to inject process gas into the plasma. The plasma produces radicals from the gas injected into the plasma. The cavity has an exit or opening formed therein that ejects the radicals from the cavity. The ejected radicals may be directed towards a subject wafer substrate under the radical source. This Abstract is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
    Type: Grant
    Filed: May 4, 2018
    Date of Patent: December 14, 2021
    Assignee: Tokyo Electron Limited
    Inventors: Barton Lane, Peter Ventzek
  • Patent number: 11135780
    Abstract: There is provided an apparatus 1 that includes a pair of molds 10a and 10b that press together, heat, and weld an overlapping part of a plurality of film-like members, a pair of heater blocks 20a and 20b that respectively support the pair of molds; a plurality of first support blocks 37 that are connected via a plurality of rod-like members 50, which midway include parts that restrict transmission of heat, to one heater block 20a; a plurality of second support blocks 38 that are connected via the plurality of rod-like members to the other heater block 20b; and a driving mechanism 60 that changes, via the support blocks, a gap between the pair of molds to press together the film-like members.
    Type: Grant
    Filed: November 28, 2018
    Date of Patent: October 5, 2021
    Assignee: Nagano Automation Co., Ltd.
    Inventors: Seiji Yamaura, Hirotaka Kojima
  • Patent number: 11024532
    Abstract: A wafer support structure for use in a chamber used for semiconductor fabrication of wafers is provided. The wafer support structure includes a dielectric block. A first electrode is embedded in a top half of the dielectric block. The first electrode is configured for connection to a direct current (DC) power source. A second electrode is embedded in a bottom half of the dielectric block. A vertical connection is embedded in the dielectric block for electrically coupling the second electrode to the first electrode.
    Type: Grant
    Filed: August 10, 2018
    Date of Patent: June 1, 2021
    Assignee: Lam Research Corporation
    Inventors: Alexander Matyushkin, Alexei Marakhtanov, John Patrick Holland, Keith Gaff, Felix Kozakevich
  • Patent number: 10950414
    Abstract: Disclosed are a plasma processing apparatus and a method of manufacturing a semiconductor device using the same. The plasma processing apparatus comprises a chamber, an electrostatic chuck in the chamber and loading a substrate, a plasma electrode generating an upper plasma on the electrostatic chuck; and a hollow cathode between the plasma electrode and the electrostatic chuck, wherein the hollow cathode generates a lower plasma below the upper plasma. The hollow cathode comprises cathode holes each having a size less than a thickness of a plasma sheath of the upper plasma.
    Type: Grant
    Filed: May 18, 2018
    Date of Patent: March 16, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sang Ki Nam, Akira Koshiishi, Kwangyoub Heo, Sunggil Kang, Beomjin Yoo, Sungyong Lim, Vasily Pashkovskiy
  • Patent number: 10825709
    Abstract: An electrostatic chucking method uses a substrate processing apparatus including an electrostatic chuck, a focus ring, a supply unit configured to supply a heat transfer medium to a space formed between the focus ring and the electrostatic chuck, and a plurality of electrodes provided at a region in the electrostatic chuck which corresponds to the focus ring. The electrostatic chucking method includes supplying by the supply unit the heat transfer medium to the space for a plasma processing period for which a plasma for processing the substrate is generated, and applying different voltages to the plurality of electrodes to attract and hold the focus ring on the electrostatic chuck for a period other than the plasma processing period.
    Type: Grant
    Filed: March 22, 2019
    Date of Patent: November 3, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yasuharu Sasaki, Taketoshi Tomioka, Hiroki Kishi, Jisoo Suh
  • Patent number: 10811296
    Abstract: Embodiments described herein generally relate to plasma assisted or plasma enhanced processing chambers. More specifically, embodiments herein relate to electrostatic chucking (ESC) substrate supports configured to provide pulsed DC voltage to a substrate, and methods of biasing the substrate using the pulsed DC voltage, during plasma assisted or plasma enhanced semiconductor manufacturing processes.
    Type: Grant
    Filed: September 20, 2017
    Date of Patent: October 20, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Jaeyong Cho, Philip Allan Kraus
  • Patent number: 10727029
    Abstract: In one embodiment, the present disclosure is directed to an RF impedance matching network that includes an RF input coupled to an RF source, an RF output coupled to a plasma chamber, and an electronically variable capacitor (EVC). A first control circuit controls the EVC and is separate and distinct from a second control circuit controlling the RF source. To assist in causing an impedance match between the RF source and the plasma chamber, the first control circuit determines, using a match lookup table with a value based on a detected RF parameter, a new EVC configuration for providing a new EVC capacitance. To further cause the impedance match, the second control circuit alters the variable frequency of the RF source, but operates independently from the first control circuit.
    Type: Grant
    Filed: July 29, 2019
    Date of Patent: July 28, 2020
    Assignee: RENO TECHNOLOGIES, INC
    Inventors: Michael Gilliam Ulrich, Imran Ahmed Bhutta
  • Patent number: 10529596
    Abstract: A plasma processing apparatus includes a process container configured to accommodate a target substrate and to be vacuum-exhausted. A first electrode and a second electrode are disposed opposite each other within the process container. The first electrode includes an outer portion and an inner portion both facing the second electrode such that the outer portion surrounds the inner portion. An RF power supply is configured to apply an RF power to the outer portion of the first electrode. A DC power supply is configured to apply a DC voltage to the inner portion of the first electrode. A process gas supply unit is configured to supply a process gas into the process container, wherein plasma of the process gas is generated between the first electrode and the second electrode.
    Type: Grant
    Filed: February 14, 2017
    Date of Patent: January 7, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Naoki Matsumoto, Chishio Koshimizu, Akira Koshiishi
  • Patent number: 10436751
    Abstract: A dielectric barrier discharge ionization detector Includes: a dielectric tube; a high-voltage electrode connected to an AC power source and circumferentially formed on the outer wall of the dielectric tube; upstream-side and downstream-side ground electrodes and circumferentially formed above and below the high-voltage electrode; a discharging section for generating electric discharge to create plasma, from a gas containing argon; and a charge-collecting section for ionizing sample-gas components by the plasma and detecting an ion current formed by the ionized components. The detector also satisfies one or both of the following conditions: the upstream-side ground electrode is longer than a creeping discharge initiation distance between a tube-line tip member at the upper end of the dielectric tube and the high-voltage electrode; or the downstream-side ground electrode is longer than a creeping discharge initiation distance between the high-voltage electrode and the charge-collecting section.
    Type: Grant
    Filed: September 7, 2017
    Date of Patent: October 8, 2019
    Assignee: Shimadzu Corporation
    Inventor: Kei Shinada
  • Patent number: 10418224
    Abstract: In the plasma etching method, a sample is placed on a stage in a chamber. A first gas is introduced into the chamber. Electric field is supplied within the chamber to plasma is generated from the first gas. A first RF power of a first frequency, which is for generating a bias voltage in the sample for etching the sample with radicals which are generated in the plasma while the plasma is generated, is supplied to the stage. A second gas is introduced from a position in outer periphery of a surface of the stage, on which the sample is placed. A second RF power of a second frequency higher than the first frequency and capable of generating plasma from the second gas above the stage that allows radicals generated in the plasma generated from the second gas to be supplied in the outer periphery, is supplied to the stage.
    Type: Grant
    Filed: April 12, 2018
    Date of Patent: September 17, 2019
    Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
    Inventors: Naoyuki Kofuji, Ken'etsu Yokogawa, Nobuyuki Negishi, Masami Kamibayashi, Masatoshi Miyake
  • Patent number: 10399254
    Abstract: A seamless mold manufacturing method of the invention is a seamless mold manufacturing method having the steps of forming a thermal reaction type resist layer on a sleeve-shaped mold, and exposing using a laser and developing the thermal reaction type resist layer and thereby forming a fine mold pattern, and is characterized in that the thermal reaction type resist layer is comprised of a thermal reaction type resist having a property of reacting in predetermined light intensity or more in a light intensity distribution in a spot diameter of the laser.
    Type: Grant
    Filed: December 31, 2015
    Date of Patent: September 3, 2019
    Assignee: ASAHI KASEI KABUSHIKI KAISHA
    Inventors: Masaru Suzuki, Yoshimichi Mitamura, Masatoshi Maeda
  • Patent number: 10283382
    Abstract: A plasma processing apparatus including an electrostatic chuck supporting a wafer; a focus ring disposed to surround an outer circumferential surface of the wafer; an insulation ring disposed to surround an outer circumferential surface of the focus ring; and an edge ring supporting lower portions of the focus ring and the insulation ring, the edge ring being spaced apart from the electrostatic chuck and surrounding an outer circumferential surface of the electrostatic chuck; wherein the edge ring includes a flow channel containing a fluid therein.
    Type: Grant
    Filed: August 9, 2017
    Date of Patent: May 7, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Young Jin Noh, Kyung Sun Kim, Seung Bo Shim, Yong Woo Lee, Ji Soo Im, Won Young Choi
  • Patent number: 10276352
    Abstract: The present invention concerns a device (10) for the surface treatment of a substrate (1) by dielectric barrier discharge that enables the generation of a cold filamentary plasma at atmospheric pressure, comprising a reaction chamber, in which are positioned means for supporting and/or moving the substrate (2) and at least two electrodes (3, 4) arranged in parallel on either side of the means for supporting and/or moving the substrate (2), of which one electrode (3) is intended to be brought to high voltage and a counter-electrode (4) to be earthed. It is characterised in that the counter-electrode (4) has a width (lce) and a length (Lce) that are respectively smaller than the width (le) and the length (Le) of the electrode (3), and in that the counter-electrode (4) is positioned so that it is enclosed in an orthogonal projection (5) of the electrode (3) on a plane containing the counter-electrode (4).
    Type: Grant
    Filed: December 18, 2013
    Date of Patent: April 30, 2019
    Assignee: AGC INC.
    Inventors: M. Eric Tixhon, M. Eric Michel, M. Joseph LeClercq
  • Patent number: 10224210
    Abstract: A plasma processing system includes a process chamber and a plasma source that generates a plasma in a plasma cavity. The plasma cavity is substantially symmetric about a toroidal axis. The plasma source defines a plurality of outlet apertures on a first axial side of the plasma cavity Plasma products produced by the plasma pass in the axial direction, through the plurality of outlet apertures, from the plasma cavity toward the process chamber. A method of plasma processing includes generating a plasma within a substantially toroidal plasma cavity that defines a toroidal axis, to form plasma products, and distributing the plasma products to a process chamber through a plurality of outlet openings substantially azimuthally distributed about a first axial side of the plasma cavity, directly into a process chamber.
    Type: Grant
    Filed: December 9, 2014
    Date of Patent: March 5, 2019
    Assignee: Applied Materials, Inc.
    Inventor: Dmitry Lubomirsky
  • Patent number: 10083853
    Abstract: An Electrostatic Chuck (ESC) in a chamber of a semiconductor manufacturing apparatus is presented for eliminating cooling-gas light-up. One wafer support includes a baseplate connected to a radiofrequency power source, a dielectric block, gas supply channels for cooling the wafer bottom, and first and second electrodes. The dielectric block is situated above the baseplate and supports the wafer when present. The first electrode is embedded in the top half of the dielectric block, where the top surface of the first electrode is substantially parallel to a top surface of the dielectric block, and the first electrode is connected to a DC power source. Further, the second electrode is embedded in a bottom half of the dielectric block, the second electrode being electrically connected to the first electrode, where the bottom surface of the second electrode is substantially parallel to a top surface of the baseplate.
    Type: Grant
    Filed: October 19, 2015
    Date of Patent: September 25, 2018
    Assignee: Lam Research Corporation
    Inventors: Alexander Matyushkin, Alexei Marakhtanov, John Patrick Holland, Keith Gaff, Felix Kozakevich
  • Patent number: 10008369
    Abstract: There is provided an apparatus for cyclical plasma etching of a substrate, the apparatus comprising: a process chamber; a support within the process chamber for receiving the substrate to be etched; a controller for repeatedly applying a dosing step and a bombardment steps respectively; a dosing controller for controlling the flow of a process gas in the dosing step such that the substrate is exposed to a maximum dose of process gas in use of 1000 Langmuirs and said dose is controllable within an accuracy of 1 Langmuir; and a first signal generator coupled to the process chamber and a second signal generator coupled to the support within the process chamber, the first and second signal generators being configured such that in use positions ions of an plasma active species within the process chamber have a substrate bombardment energy in the range of 10 eV to 100 eV which is controllable within an accuracy of 5 eV. There is also provided a method for cyclical plasma etching of a substrate using said apparatus.
    Type: Grant
    Filed: August 26, 2016
    Date of Patent: June 26, 2018
    Assignee: Oxford Instruments Nanotechnology Tools Limited
    Inventors: Andrew L. Goodyear, Michael J. Cooke
  • Patent number: 9960014
    Abstract: In the plasma etching method, a sample is placed on a stage in a chamber. A first gas is introduced into the chamber. Electric field is supplied within the chamber to plasma is generated from the first gas. A first RF power of a first frequency, which is for generating a bias voltage in the sample for etching the sample with radicals which are generated in the plasma while the plasma is generated, is supplied to the stage. A second gas is introduced from a position in outer periphery of a surface of the stage, on which the sample is placed. A second RF power of a second frequency higher than the first frequency and capable of generating plasma from the second gas above the stage that allows radicals generated in the plasma generated from the second gas to be supplied in the outer periphery, is supplied to the stage.
    Type: Grant
    Filed: December 6, 2016
    Date of Patent: May 1, 2018
    Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
    Inventors: Naoyuki Kofuji, Ken'etsu Yokogawa, Nobuyuki Negishi, Masami Kamibayashi, Masatoshi Miyake
  • Patent number: 9927481
    Abstract: A method for modeling cable loss is described. The method includes receiving a measurement of reverse power and forward power at a radio frequency (RF) generator. The method further includes computing theoretical power delivered to a matching network as a difference between the forward power and the reverse power and calculating a ratio of the reverse power to the forward power to generate an RF power reflection ratio. The method further includes identifying a cable power attenuation fraction based on a frequency of the RF generator and calculating a cable power loss as a function of the RF power reflection ratio, the cable power attenuation fraction, and the theoretical power. The method includes calculating actual power to be delivered to the impedance matching network based on the theoretical power and the cable power loss and sending the calculated actual power to the RF generator to generate an RF signal.
    Type: Grant
    Filed: February 8, 2017
    Date of Patent: March 27, 2018
    Assignee: Lam Research Corporation
    Inventors: Arthur M. Howald, John C. Valcore, Jr.
  • Patent number: 9773643
    Abstract: Provided are apparatuses and methods for performing deposition and etch processes in an integrated tool. An apparatus may include a plasma processing chamber that is a capacitively-coupled plasma reactor, and the plasma processing chamber can include a showerhead that includes a top electrode and a pedestal that includes a bottom electrode. The apparatus may be configured with an RF hardware configuration so that an RF generator may power the top electrode in a deposition mode and power the bottom electrode in an etch mode. In some implementations, the apparatus can include one or more switches so that at least an HFRF generator is electrically connected to the showerhead in a deposition mode, and the HFRF generator and an LFRF generator is electrically connected to the pedestal and the showerhead is grounded in the etch mode.
    Type: Grant
    Filed: June 30, 2016
    Date of Patent: September 26, 2017
    Assignee: Lam Research Corporation
    Inventors: Akhil Singhal, Patrick A. Van Cleemput, Martin E. Freeborn, Bart J. van Schravendijk
  • Patent number: 9748077
    Abstract: Disclosed is an apparatus and method of processing substrate, wherein the apparatus comprises a process chamber; a substrate supporter for supporting at least one of substrates, wherein the substrate supporter is provided in the process chamber, and is rotated at a predetermined direction; a chamber lid confronting with the substrate supporter, the chamber lid for covering the process chamber; and a gas distributor having a plurality of gas distribution modules for distributing gas to the substrate, wherein the plurality of gas distribution modules are connected to the chamber lid, wherein each of the gas distribution modules includes a power source electrode and a ground electrode confronting each other, a plasma discharge space is formed between the power source electrode and the ground electrode, and the plasma discharge space is not overlapped with a thin film formation region of the substrate supported by the substrate supporter.
    Type: Grant
    Filed: May 28, 2013
    Date of Patent: August 29, 2017
    Assignee: JUSUNG ENGINEERING CO., LTD.
    Inventors: Jeung Hoon Han, Chul Joo Hwang, Seung Hoon Seo, Sang Don Lee
  • Patent number: 9704731
    Abstract: A plasma processing method is provided for a plasma processing apparatus which includes a plurality of upstream-side expansion valves and a plurality of downstream-side expansion valves connected to respective refrigerant inlets and respective refrigerant outlets to adjust a flow rate or a pressure of a refrigerant flowing into the respective refrigerant inlets and a flow rate or a pressure of a refrigerant flowing out from the respective refrigerant outlets. The method includes adjusting openings of the upstream-side expansion valves and openings of the downstream-side expansion valves so that no change in flow rate of the refrigerant occurs in a plurality of refrigerant channels between the plurality of upstream-side expansion valves and the plurality of downstream-side expansion valves via the plurality of refrigerant channels in a refrigeration cycle allowing the refrigerant to flow therein.
    Type: Grant
    Filed: October 15, 2014
    Date of Patent: July 11, 2017
    Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
    Inventors: Go Miya, Masaru Izawa, Takumi Tandou