Abstract: In a plasma processing apparatus, a table has a wafer support to hold a wafer and a peripheral segment surrounding the wafer support and having through-holes. The peripheral segment has an upper surface lower than that of the wafer support. An outer focus ring is disposed over the peripheral segment and has a recess or a cutout at an inner portion of the outer focus ring, and the recess or cutout has through-holes. An inner focus ring is disposed in the recess or cutout of the outer focus ring. Lift pins respectively extend through the through-holes of the peripheral segment and the through-holes of the recess or cutout of the outer focus ring. Shift mechanisms control shift of the respective lift pins.

Abstract: To create constant partial pressures of the by-products and residence time of the gas molecules across the wafer, a dual showerhead reactor can be used. A dual showerhead structure can achieve spatially uniform partial pressures, residence times and temperatures for the etchant and for the by-products, thus leading to uniform etch rates across the wafer. The system can include differential pumping to the reactor.

Abstract: An ion beam source including a plasma chamber including a plasma generating space, a plasma generator configured to generate plasma in the plasma generating space, a first grid connected to the plasma chamber, a second grid connected to the plasma chamber, and a first grid driver connected to the first grid. The first grid driver may be configured to move the first grid relative to the second grid.

Abstract: Plasma jet assemblies utilizing evanescent mode cavity resonators, and methods of making the same and using the same, are described.

Abstract: Various showerheads and methods are provided. A showerhead may include a faceplate partially defined by a front surface and a back surface, a back plate having a gas inlet, a first conical frustum surface, and a second conical frustum surface, a plenum volume fluidically connected to the gas inlet and at least partially defined by the gas inlet, the back surface of the faceplate, the first conical frustum surface, and the second conical frustum surface, and a baffle plate positioned within the plenum volume, and having a plurality of baffle plate through-holes extending through the baffle plate. The second conical frustum surface may be positioned radially outwards from the first conical frustum surface with respect to a center axis of the showerhead, and the second conical frustum surface may be positioned along the center axis farther from the gas inlet than the first conical frustum surface.

Abstract: A method and apparatus for biasing regions of a substrate in a plasma assisted processing chamber are provided. Biasing of the substrate, or regions thereof, increases the potential difference between the substrate and a plasma formed in the processing chamber thereby accelerating ions from the plasma towards the active surfaces of the substrate regions. A plurality of bias electrodes herein are spatially arranged across the substrate support in a pattern that is advantageous for managing uniformity of processing results across the substrate.

Abstract: A processing chamber includes a chamber body defining an interior volume and including an access port. A cathode assembly is configured to generate a plasma within the interior volume. A chamber liner includes one or more inner notch structures to engage with one or more components of the chamber body. The chamber liner is configured to move between a loading position and an operation position. When the chamber liner is in the loading position, the interior volume is accessible by the access port. When the chamber liner is in the operation position, the chamber liner at least partially encloses the interior volume.

Abstract: An electrode for a plasma processing apparatus is provided. The electrode comprises: a first conductive member; and a second member disposed in the first member and made of a material having a secondary electron emission coefficient different from a secondary electron emission coefficient of the first member.

Abstract: The object of the present invention is to provide a cleaning apparatus for a component of a semiconductor production apparatus, which is capable of preventing the attachment of reaction products into the cleaning processing furnace by a simple structure, the present invention provides a cleaning apparatus (1) for a component of a semiconductor production apparatus including: a cleaning processing furnace (2) which is configured to house the component (10) of a semiconductor production apparatus; a heating device (3); a gas introduction pipe (4); a gas discharge pipe (5); a decompression device (6); a first temperature control device (7); a second temperature control device (8); and a purge gas supply device (9).

Abstract: A wafer support device includes a dielectric substrate and an RF electrode provided in the dielectric substrate. The RF electrode is divided into a plurality of zone electrodes arranged in a planar direction of the dielectric substrate. The wafer support device has: a short-circuit member interconnecting the plurality of zone electrodes; and a main power supply rod connected to the short-circuit member from a back side of the dielectric substrate.

Abstract: A reaction chamber lining including an annular side wall and a flange arranged on an upper portion of the side wall. An end face of the flange extends from the side wall in a radial direction, an outer edge of the flange extends in the radial direction to form fixing flanging parts, and a hole is in each of the fixing flanging parts. The side wall includes a rectangular slot, and a position of the rectangular slot corresponds to a position of a robotic arm access hole in a side wall of a reaction chamber. The side wall includes through holes and honeycomb-shaped apertures. A face joined to the bottom of the side wall includes a disc extending inwards in the radial direction, an extending end of the disc is fitted with an outer edge of an electrode assembly. A plurality of circles of slotted holes are in the disc.

Abstract: A plasma processing apparatus includes: a processing container in which a mounting stage mounted with a substrate is provided and a plasma process is performed on the substrate; an exhaust passage which is provided around the mounting stage and through which a gas containing a by-product released by the plasma process flows; and a first adsorption member which is arranged along an inner wall surface of the exhaust passage and of which a surface is roughened to adsorb the by-product.

Abstract: Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit for use in a process chamber, includes: a top plate having a central recess disposed in an upper surface thereof; a channel extending from an outer portion of the top plate to the central recess; a plurality of holes disposed through the top plate from a bottom surface of the recess to a lower surface of the top plate; a cover plate configured to be coupled to the top plate and to form a seal along a periphery of the central recess such that the covered recess forms a plenum within the top plate; and a tubular body extending down from the lower surface of the top plate and surrounding the plurality of holes, the tubular body further configured to surround a substrate support.

Abstract: Exemplary semiconductor processing chambers may include a gasbox including a first plate having a first surface and a second surface opposite to the first surface. The first plate of the gasbox may define a central aperture that extends from the first surface to the second surface. The first plate may define an annular recess in the second surface. The first plate may define a plurality of apertures extending from the first surface to the annular recess in the second surface. The gasbox may include a second plate characterized by an annular shape. The second plate may be coupled with the first plate at the annular recess to define a first plenum within the first plate.

Abstract: There is provided a plasma processing device.

Abstract: A method of plasma etching a semiconductor wafer includes: securing the semiconductor wafer to a mounting platform within a process chamber such that an outer edge of the semiconductor wafer is encircled by a sloped annular ring having a plurality of perforation therein, the sloped annular ring having an inner edge at a first end of the sloped annular ring and an outer edge at a second end of the sloped annular ring. Suitably, the first end is opposite the second end and the first end resides in a first plane and the second end resides in a second plane different from the first plane. The method further includes generating a plasma within the process chamber such that the semiconductor wafer is exposed to the plasma and creating a flow of at least one of plasma and gas through the perforations in the sloped annular ring.

Abstract: Aspects of the present disclosure relate generally to pedestals, components thereof, and methods of using the same for substrate processing chambers. In one implementation, a pedestal for disposition in a substrate processing chamber includes a body. The body includes a support surface. The body also includes a stepped surface that protrudes upwards from the support surface. The stepped surface is disposed about the support surface to surround the support surface. The stepped surface defines an edge ring such that the edge ring is integrated with the pedestal to form the body that is monolithic. The pedestal also includes an electrode disposed in the body, and one or more heaters disposed in the body.

Abstract: A plasma control device includes a matching circuit, a resonance circuit, and a controller. The matching circuit is connected to a first electrode of a plasma chamber including the first electrode and a second electrode, and matches impedance of a radio frequency (RF) power by an RF driving signal with an impedance of the first electrode. The RF driving signal is based on a first RF signal having a first frequency. The resonance circuit is connected between the second electrode and a ground voltage, and controls plasma distribution within the plasma chamber by providing resonance with respect to harmonics associated with the first frequency and by adjusting a ground impedance between the second electrode and the ground voltage. The controller provides the resonance circuit with a capacitance control signal associated with the resonance and switch control signals associated with the ground impedance.

Abstract: An atomic layer deposition system is provided, including: a main body, a platform, a gas distribution showerhead assembly and a first ring member. The main body defines a reaction chamber, and the platform is located in the reaction chamber. The gas distribution showerhead assembly is disposed on the main body and includes at least one gas inlet channel and at least one gas diffusion plate. Each of the at least one gas diffusion plate includes a plurality of through holes. The first ring member defines a radial direction and is disposed between the platform and the at least one gas diffusion plate. A region of the at least one gas diffusion plate distributed with the plurality of through holes defines an outermost distribution profile. An inner circumferential wall of the first ring member and the outermost distribution profile keep a distance in the radial direction.

Abstract: A processing apparatus for processing a workpiece is presented. The processing apparatus includes a processing chamber, a plasma chamber separated from the processing chamber disposed on a first side of the processing chamber, and a plasma source configured to generate a plasma in the plasma chamber. One or more radiative heat sources configured to heat the workpiece disposed on a second and opposite side of the first side of the processing chamber. A dielectric window is disposed between the workpiece support and the one or more heat sources. The processing apparatus includes a rotation system configured to rotate the workpiece, the rotation system comprising a magnetic actuator.

Abstract: To create constant partial pressures of the by-products and residence time of the gas molecules across the wafer, a dual showerhead reactor can be used. A dual showerhead structure can achieve spatially uniform partial pressures, residence times and temperatures for the etchant and for the by-products, thus leading to uniform etch rates across the wafer. The system can include differential pumping to the reactor.

Abstract: Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a first lid plate seated on the chamber body. The first lid plate may define a plurality of apertures through the first lid plate. The systems may include a plurality of lid stacks equal to a number of the plurality of apertures. The systems may define a plurality of isolators. An isolator may be positioned between each lid stack and a corresponding aperture of the plurality of apertures. The systems may include a plurality of annular spacers. An annular spacer of the plurality of annular spacers may be positioned between each isolator and a corresponding lid stack of the plurality of lids stacks. The systems may include a plurality of manifolds. A manifold may be seated within an interior of each annular spacer of the plurality of annular spacers.

Abstract: Atomic layer etching (ALE) of a substrate using a wafer scale wave of precisely controlled electrons is presented. A volume of gaseous plasma including diluent and reactive species and electrons of a uniform steady state composition is generated in a positive column of a DC plasma proximate the substrate. A corrosion layer is formed on the substrate by adsorption of the reactive species to atoms at the surface of the substrate. The substrate is positively biased to draw electrons from the volume to the surface of the substrate and impart energy to the electrons to stimulate electron transitions in the corrosion layer species, resulting in ejection of the corrosion layer species via electron stimulation desorption (ESD). The substrate is negatively biased to repel the electrons from the surface of the substrate back to the volume, followed by a zero bias to restore the steady state composition of the volume.

Abstract: A plasma processing apparatus includes: an electrostatic chuck supporting a wafer, and connected to a first power supply, an edge ring disposed to surround an edge of the electrostatic chuck and formed of a material having a first resistivity value, a dielectric ring supporting a lower portion of the edge ring, formed of a material having a second resistivity value lower than that of the first resistivity value, and connected to a second power supply, and an electrode ring disposed in a region overlapping the dielectric ring, in contact with a lower surface of the edge ring, and formed of a material having a third resistivity value greater than the first resistivity value, wherein the third resistivity value is a value of 90 ?cm to 1000 ?cm.

Abstract: A plasma generation device includes a plasma head configured to eject plasma gas that is plasmatized, a gas supply device configured to supply gas serving as the plasma gas to the plasma head, a pair of electrodes that is provided in the plasma head, the pair of electrodes being configured to perform discharging for a part of the gas supplied from the gas supply device to generate the plasma gas, a temperature sensor that is provided in the plasma head, the temperature sensor being configured to measure a temperature of the plasma head; and a control device, in which the control device executes a cooling process of cooling the plasma head by causing the gas supply device to continue supply of the gas until the temperature sensor measures a temperature equal to or less than a predetermined value after the discharging of the pair of electrodes is stopped.

Abstract: A vacuum processing apparatus SM of this invention has: a vacuum chamber which performs a predetermined processing on a to-be-processed substrate that is set in position in the vacuum chamber. Inside the vacuum chamber there is disposed a deposition preventive plate) which is made up of a fixed deposition preventive plate and a moveable deposition preventive plate which is moveable in one direction. Further provided are: a metal block body disposed in a vertical posture on an inner wall surface of the vacuum chamber; and a cooling means for cooling the block body. In a processing position in which a predetermined vacuum processing is performed on the to-be-processed substrate, a top surface of the block body is arranged to be in proximity to or in contact with the moveable deposition preventive plate.

Abstract: A plasma processing system includes a plasma processing apparatus including a processing container that accommodates a substrate, and configured to perform a plasma processing on the substrate by generating a plasma in the processing container; and a control device configured to control the plasma processing apparatus. The control device collects a measurement value indicating a matching state of impedance between a power supply and the plasma; specifies a point corresponding to a value of the variables that maximizes a gradient of change of the measurement value with respect to a vector; specifies a point farther from the matching point than the passing point on a straight line; and ignites the plasma in the plasma processing apparatus by controlling each variable so that the measurement value changes from the starting point toward the matching point along the straight line.

Abstract: Device for hydrogen sulfide plasma dissociation includes a plasma chemical reactor including an arc plasma generator that has a cathode and an anode; the anode having a working surface for contacting hydrogen sulfide plasma, wherein the working surface is made from a material that includes stainless steel, tungsten or molybdenum; the cathode having a tip for arc attachment where a cathode spot is formed, wherein the cathode tip is made from pure tungsten, pure molybdenum, a tungsten or molybdenum alloy with tungsten as a major component or a composite material in which tungsten or molybdenum is the major component; and a flow path configured to have an inlet for gaseous hydrogen sulfide for dissociation in plasma into hydrogen and sulfur, and an outlet for gaseous products of hydrogen sulfide plasma dissociation. Optionally, the alloy or composite material has up to 10% low work function elements (thorium, cerium, lanthanum, or zirconium).

Abstract: A component comprises a film containing yttrium oxide. A cross section of the film has a first portion, a second portion, and a third portion, and the first to third portions are separated from each other by 0.5 mm or more. A Vickers hardness B1 measured in the first portion, a Vickers hardness B2 measured in the second portion, a Vickers hardness B3 measured in the third portion, and an average value A of the Vickers hardnesses B1 to B3 are numbers satisfying 0.8A?B1?1.2A, 0.8A?B2?1.2A, and 0.8A?B3?1.2A.

Abstract: Atomic layer etching of a substrate using a wafer scale wave of precisely controlled electrons is presented. A volume of gaseous plasma including diluent and reactive species and electrons of a uniform steady state composition is generated in a positive column of a DC plasma proximate the substrate. A corrosion layer is formed on the substrate by adsorption of the reactive species to atoms at the surface of the substrate. The substrate is positively biased to draw electrons from the volume to the surface of the substrate and impart an energy to the electrons so to stimulate electron transitions in the corrosion layer species, resulting in ejection of the corrosion layer species via electron stimulation desorption (ESD). The substrate is negatively biased to repel the electrons from the surface of the substrate back to the volume, followed by a zero bias to restore the steady state composition of the volume.

Abstract: A plasma processing apparatus according to an exemplary embodiment includes a processing container, a stage, a dielectric plate, an upper electrode, an introduction part, a driving shaft, and an actuator. The stage is provided in the processing container. The dielectric plate is provided above the stage via a space in the processing container. The upper electrode has flexibility, is provided above the dielectric plate, and provides a gap between the dielectric plate and the upper electrode. The introduction part is an introduction part of radio frequency waves that are VHF waves or UHF waves, is provided at a horizontal end portion of the space. The driving shaft is coupled to the upper electrode on a central axial line of the processing container. The actuator is configured to move the driving shaft in a vertical direction.

Abstract: A faceplate of a showerhead has a bottom side that faces a plasma generation region and a top side that faces a plenum into which a process gas is supplied during operation of a substrate processing system. The faceplate includes apertures formed through the bottom side and openings formed through the top side. Each of the apertures is formed to extend through a portion of an overall thickness of the faceplate to intersect with at least one of the openings to form a corresponding flow path for process gas through the faceplate. Each of the apertures has a cross-section that has a hollow cathode discharge suppression dimension in at least one direction. Each of the openings has a cross-section that has a smallest cross-sectional dimension that is greater than the hollow cathode discharge suppression dimension.

Abstract: Certain embodiments of the present disclosure relate to chamber liners, processing chambers that include chamber liners, and methods of using the same. In one embodiment, a method of operating a processing chamber includes causing a chamber liner within the processing chamber to move to a loading position to allow a substrate to be inserted through an access port of the processing chamber into an interior volume of the processing chamber. The method further includes causing the chamber liner to move to an operation position that blocks the access port after the substrate has been inserted into the interior volume. The method further includes generating a plasma using a cathode assembly.

Abstract: Atomic layer etching of a substrate using a wafer scale wave of precisely controlled electrons is presented. A volume of gaseous plasma including diluent and reactive species and electrons of a uniform steady state composition is generated in a positive column of a DC plasma proximate the substrate. A corrosion layer is formed on the substrate by adsorption of the reactive species to atoms at the surface of the substrate. The substrate is positively biased to draw electrons from the volume to the surface of the substrate and impart an energy to the electrons so to stimulate electron transitions in the corrosion layer species, resulting in ejection of the corrosion layer species via electron stimulation desorption (ESD). The substrate is negatively biased to repel the electrons from the surface of the substrate back to the volume, followed by a zero bias to restore the steady state composition of the volume.

Abstract: Methods and apparatus leverage dielectric barrier discharge (DBD) plasma to treat samples for surface modification prior to photomask application and for photomask cleaning. In some embodiments, a method of treating a surface with AP plasma includes igniting plasma over an ignition plate where the AP plasma is formed by one or more plasma heads of an AP plasma reactor positioned above the ignition plate, monitoring characteristics of the AP plasma with an optical emission spectrometer (OES) sensor to determine if stable AP plasma is obtained and, if so, moving the AP reactor over a central opening of an assistant plate where the central opening contains a sample under treatment and where the assistant plate reduces AP plasma arcing on the sample during treatment. The AP reactor scans back and forth over the central opening of the assistant plate while maintaining stabilized AP plasma to treat the sample.

Abstract: Embodiments provided herein generally include apparatus, plasma processing systems and methods for boosting a voltage of an electrode in a processing chamber. An example plasma processing system includes a processing chamber, a plurality of switches, an electrode disposed in the processing chamber, a voltage source, and a capacitive element. The voltage source is selectively coupled to the electrode via one of the plurality of switches. The capacitive element is selectively coupled to the electrode via one of the plurality of switches. The capacitive element and the voltage source are coupled to the electrode in parallel. The plurality of switches are configured to couple the capacitive element and the voltage source to the electrode during a first phase, couple the capacitive element and the electrode to a ground node during a second phase, and couple the capacitive element to the electrode during a third phase.

Abstract: A method of removing a lens forming material deposited on a lens forming surface (1) of a reusable glass mold for forming ophthalmic lenses, in particular contact lenses or intraocular lenses, comprises the steps of providing a plasma (2), exposing the lens forming surface (1) of the reusable glass mold to the plasma (2) for removing the lens forming material deposited on the lens forming surface (1). The plasma (2) is generated under atmospheric pressure and potential-free, or is generated under reduced pressure.

Abstract: A tunable upper plasma exclusion zone (PEZ) ring adjusts a distance of plasma during processing in a processing chamber and includes: a lower surface that includes: a horizontal portion; and an upwardly tapered outer portion that is conical and that extends outwardly and upwardly from the horizontal portion at an upward taper angle of about 5° to 50° with respect to the horizontal portion, where an outer diameter of the upwardly tapered outer portion is greater than 300 millimeters (mm), and where an inner diameter where the upwardly tapered outer portion begins to extend upwardly is less than 300 mm. A controller is to, during processing of a 300 mm circular substrate, adjust the distance of plasma for treatment of the 300 mm circular substrate at least one of radially inward and radially outward using the tunable upper PEZ ring.

Abstract: The present disclosure relates to a lateral-type vacuum deposition apparatus, and a source block and a source assembly for the same. Disclosed are a source block that may simplify a lateral-type vacuum deposition apparatus and a lateral-type vacuum deposition apparatus using the same. The source block has a predetermined shape. In the lateral-type vacuum deposition apparatus, the substrate and the source block may face away each other. Accordingly, the lateral-type vacuum deposition apparatus including the source block is free of a conduit for transferring a vaporized source to a nozzle, thereby simplifying a structure of the apparatus. In particular, the source block may have a visible light transmittance of at least about 10% and may exhibit excellent shape maintenance ability during a lateral-type vacuum deposition process.

Abstract: Methods of forming metal silicon oxide layers and metal silicon oxynitride layers are disclosed. Exemplary methods include providing a silicon precursor to the reaction chamber for a silicon precursor pulse period, providing a first metal precursor to the reaction chamber for a first metal precursor pulse period, and providing a first reactant to the reaction chamber for a first reactant pulse period, wherein the silicon precursor pulse period and the first metal precursor pulse period overlap.

Abstract: Process kits, processing chambers, and methods for processing a substrate are provided. The process kit includes an edge ring, a sliding ring, an adjustable tuning ring, and an actuating mechanism. The edge ring has a first ring component interfaced with a second ring component that is movable relative to the first ring component forming a gap therebetween. The sliding ring is positioned beneath the second ring component of the edge ring. The adjustable tuning ring is positioned beneath the sliding ring. The actuating mechanism is interfaced with the lower surface of the adjustable tuning ring and configured to actuate the adjustable tuning ring such that the gap between the first and second ring components is varied. In one or more examples, the sliding ring includes a matrix and a coating, the matrix contains an electrically conductive material and the coating contains an electrically insulting material.

Abstract: Exemplary semiconductor processing chambers may include a gasbox including a first plate having a first surface and a second surface opposite to the first surface. The first plate of the gasbox may define a central aperture that extends from the first surface to the second surface. The first plate may define an annular recess in the second surface. The first plate may define a plurality of apertures extending from the first surface to the annular recess in the second surface. The gasbox may include a second plate characterized by an annular shape. The second plate may be coupled with the first plate at the annular recess to define a first plenum within the first plate.

Abstract: The invention relates to a treatment device for dielectric harrier discharge plasma treatment of a wound surface or skin surface, having: a flexible, planar electrode assembly with at least one planar electrode (6, 6?) and a dielectric layer (5) which at least partially embeds the at least one electrode (6, 6?), has a contact side (7) facing the wound surface or skin surface and electrically shields the planar electrode (6, 6?) from the wound surface or skin surface such that only a dielectric barrier current can flow from the electrode (6, 6?) to the wound surface or skin surface; and a control device (2) which has a separate housing (25) and via which the electrode (6, 6?) can be connected to an operating voltage.

Abstract: An apparatus for patterned processing includes a source of input gas, a source of energy suitable for generating a plasma from the input gas in a plasma region and a grounded sample holder configured for receiving a solid sample. The apparatus includes a mask arranged between the plasma region and the grounded sample holder, the mask having a first face oriented toward the plasma region and a second face oriented toward a surface of the solid sample to be processed, the mask including a mask opening extending from the first face to the second face, and an electrical power supply adapted for applying a direct-current bias voltage to the mask, and the mask opening being dimensioned and shaped so as to generate spatially selective patterned processing on the surface of the solid sample.

Abstract: A film-forming apparatus for forming a predetermined film on a substrate by plasma ALD includes a chamber, a stage, a shower head having an upper electrode and a shower plate insulated from the upper electrode, a first high-frequency power supply connected to the upper electrode, and a second high-frequency power supply connected to an electrode contained in the stage. A high-frequency power is supplied from the first high-frequency power supply to the upper electrode, thereby forming a high-frequency electric field between the upper electrode and the shower plate and generating a first capacitively coupled plasma. A high-frequency power is supplied from the second high-frequency power supply to the electrode, thereby forming a high-frequency electric field between the shower plate and the electrode in the stage and generating a second capacitively coupled plasma that is independent from the first capacitively coupled plasma.

Abstract: A workpiece processing apparatus allowing independent control of the voltage applied to the shield ring and the workpiece is disclosed. The workpiece processing apparatus includes a platen. The platen includes a dielectric material on which a workpiece is disposed. A bias electrode is disposed beneath the dielectric material. A shield ring, which is constructed from a metal, ceramic, semiconductor or dielectric material, is arranged around the perimeter of the workpiece. A ring electrode is disposed beneath the shield ring. The ring electrode and the bias electrode may be separately powered. This allows the surface voltage of the shield ring to match that of the workpiece, which causes the plasma sheath to be flat. Additionally, the voltage applied to the shield ring may be made different from that of the workpiece to compensate for mismatches in geometries. This improves uniformity of incident angles along the outer edge of the workpiece.

Abstract: A plasma processing apparatus includes; a chamber, a lower electrode disposed within the chamber and including a lower surface and an opposing upper surface configured to seat a wafer, an RF rod disposed on the lower surface of the lower electrode and extending in a vertical direction. The RF plate includes a first portion contacting the lower surface of the lower electrode, a second portion protruding from the first portion towards the RF rod, and a third portion extending from the second portion to connect the RF rod. A grounding electrode is spaced apart from the RF plate and at least partially surrounds a side wall of the RF rod and a side wall of the second portion of the RF plate. The grounding electrode includes a first grounding electrode facing each of the side wall of the RF rod and the second portion of the RF plate, and a second grounding electrode at least partially surrounding the first grounding electrode, and configured to horizontally rotate.

Abstract: In the present invention, a high-voltage side electrode component further includes a conductive film disposed on an upper surface of a dielectric electrode independently of a metal electrode. The conductive film is disposed between at least one gas ejection port and the metal electrode in plan view, and the conductive film is set to ground potential.

Abstract: A processing chamber may include a gas distribution member, a metal ring member below the gas distribution member, and an isolating assembly coupled with the metal ring member and isolating the metal ring member from the gas distribution member. The isolating assembly may include an outer isolating member coupled with the metal ring member. The outer isolating member may at least in part define a chamber wall. The isolating assembly may further include an inner isolating member coupled with the outer isolating member. The inner isolating member may be disposed radially inward from the metal ring member about an central axis of the processing chamber. The inner isolating member may define a plurality of openings configured to provide fluid access into a radial gap between the metal ring member and the inner isolating member.

Abstract: A faceplate of a showerhead has a bottom side that faces a plasma generation region and a top side that faces a plenum into which a process gas is supplied during operation of a substrate processing system. The faceplate includes apertures formed through the bottom side and openings formed through the top side. Each of the apertures is formed to extend through a portion of an overall thickness of the faceplate to intersect with at least one of the openings to form a corresponding flow path for process gas through the faceplate. Each of the apertures has a cross-section that has a hollow cathode discharge suppression dimension in at least one direction. Each of the openings has a cross-section that has a smallest cross-sectional dimension that is greater than the hollow cathode discharge suppression dimension.