Having Glow Discharge Electrode Gas Energizing Means Patents (Class 156/345.43)
  • Patent number: 11404250
    Abstract: An edge ring, for a plasma etcher, may include a circular bottom portion with an opening sized to receive an electrostatic chuck supporting a semiconductor device, and a circular top portion integrally connected to a first top part of the circular bottom portion. The edge ring may include a circular chamfer portion integrally connected to a second top part of the circular bottom portion and integrally connected to a side of the circular top portion. The circular chamfer portion may include an inner surface that is angled radially outward from the opening at less than ninety degrees.
    Type: Grant
    Filed: July 8, 2020
    Date of Patent: August 2, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chien-Yu Wang, Hung-Bin Lin, Shih-Ping Hong, Shih-Hao Chen, Chen-Hsiang Lu, Ping-Chung Lee
  • Patent number: 11367593
    Abstract: The present disclosure relates to apparatus and methods that manipulate the amplitude and phase of the voltage or current of an edge ring. The apparatus includes an electrostatic chuck having a chucking electrode embedded therein for chucking a substrate to the electrostatic chuck. The apparatus further includes a baseplate underneath the substrate to feed RF power to the substrate. The apparatus further includes an edge ring disposed over the electrostatic chuck. The apparatus further includes an edge ring electrode located underneath the edge ring. The apparatus further includes a radio frequency (RF) circuit including a first variable capacitor coupled to the edge ring electrode.
    Type: Grant
    Filed: August 14, 2020
    Date of Patent: June 21, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Linying Cui, James Rogers
  • Patent number: 11345996
    Abstract: A liner assembly for a substrate processing system includes a first liner and a second liner. The first liner includes an annular body and an outer peripheral surface including a first fluid guide. The first fluid guide is curved about a circumferential line extending around the first liner. The second liner includes an annular body, an outer rim, an inner rim, a second fluid guide extending between the outer rim and the inner rim, and a plurality of partition walls extending outwardly from the second fluid guide. The second fluid guide is curved about the circumferential line when the first and second liners are positioned within the processing system.
    Type: Grant
    Filed: December 28, 2018
    Date of Patent: May 31, 2022
    Assignee: GlobalWafers Co., Ltd.
    Inventors: Arash Abedijaberi, Shawn George Thomas
  • Patent number: 11312123
    Abstract: A vacuum lamination system includes a film supply assembly, a film collection assembly, a lower lamination body, an upper lamination body, an air extractor, a moving assembly and a cutting assembly. The lower lamination body includes a first casing base and a lower heating assembly vertically movable and disposed in the first casing base. The lower heating assembly carries and moves the substrate so that the substrate is substantially flush with a top surface of the first casing base or retracted into the first casing base. The upper lamination body is vertically movable and disposed above the lower lamination body and includes an upper casing and an upper heating assembly disposed on the upper casing. The air extractor is connected to the lower lamination body. The moving assembly changes a height of a portion of the film. The cutting assembly cuts a portion of the film laminated onto the substrate.
    Type: Grant
    Filed: July 8, 2020
    Date of Patent: April 26, 2022
    Assignee: ELEADTK CO., LTD.
    Inventors: Ching-Nan Chang, Sheng-Yu Lin, Ming-Chan Chen
  • Patent number: 11251181
    Abstract: Embodiments of the disclosure provide a semiconductor device including a substrate, an insulating layer formed over the substrate, a plurality of fins formed vertically from a surface of the substrate, the fins extending through the insulating layer and above a top surface of the insulating layer, a gate structure formed over a portion of fins and over the top surface of the insulating layer, a source/drain structure disposed adjacent to opposing sides of the gate structure, the source/drain structure contacting the fin, a dielectric layer formed over the insulating layer, a first contact trench extending a first depth through the dielectric layer to expose the source/drain structure, the first contact trench containing an electrical conductive material, and a second contact trench extending a second depth into the dielectric layer, the second contact trench containing the electrical conductive material, and the second depth is greater than the first depth.
    Type: Grant
    Filed: December 16, 2019
    Date of Patent: February 15, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wen-Che Tsai, Min-Yann Hsieh, Hua Feng Chen, Kuo-Hua Pan
  • Patent number: 11227745
    Abstract: Some embodiments include a plasma sheath control system that includes an RF power supply producing an A sinusoidal waveform with a frequency greater than 20 kHz and a peak voltage greater than 1 kV and a plasma chamber electrically coupled with the RF power supply, the plasma chamber having a plurality of ions that are accelerated into a surface disposed with energies greater than about 1 kV, and the plasma chamber produces a plasma sheath within the plasma chamber from the sinusoidal waveform. The plasma sheath control system includes a blocking diode electrically connected between the RF power supply and the plasma chamber and a capacitive discharge circuit electrically coupled with the RF power supply, the plasma chamber, and the blocking diode; the capacitive discharge circuit discharges capacitive charges within the plasma chamber with a peak voltage greater than 1 kV and a discharge time that less than 250 nanoseconds.
    Type: Grant
    Filed: August 9, 2019
    Date of Patent: January 18, 2022
    Assignee: Eagle Harbor Technologies, Inc.
    Inventors: Kenneth Miller, Timothy Ziemba, James Prager, Ilia Slobodov
  • Patent number: 11201035
    Abstract: Described herein are technologies related to a radical source with a housing that includes a plasma cavity that is designed to contain a plasma created by a plasma generator. The housing has at least one gas injector designed to inject process gas into the plasma. The plasma produces radicals from the gas injected into the plasma. The cavity has an exit or opening formed therein that ejects the radicals from the cavity. The ejected radicals may be directed towards a subject wafer substrate under the radical source. This Abstract is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
    Type: Grant
    Filed: May 4, 2018
    Date of Patent: December 14, 2021
    Assignee: Tokyo Electron Limited
    Inventors: Barton Lane, Peter Ventzek
  • Patent number: 11135780
    Abstract: There is provided an apparatus 1 that includes a pair of molds 10a and 10b that press together, heat, and weld an overlapping part of a plurality of film-like members, a pair of heater blocks 20a and 20b that respectively support the pair of molds; a plurality of first support blocks 37 that are connected via a plurality of rod-like members 50, which midway include parts that restrict transmission of heat, to one heater block 20a; a plurality of second support blocks 38 that are connected via the plurality of rod-like members to the other heater block 20b; and a driving mechanism 60 that changes, via the support blocks, a gap between the pair of molds to press together the film-like members.
    Type: Grant
    Filed: November 28, 2018
    Date of Patent: October 5, 2021
    Assignee: Nagano Automation Co., Ltd.
    Inventors: Seiji Yamaura, Hirotaka Kojima
  • Patent number: 11024532
    Abstract: A wafer support structure for use in a chamber used for semiconductor fabrication of wafers is provided. The wafer support structure includes a dielectric block. A first electrode is embedded in a top half of the dielectric block. The first electrode is configured for connection to a direct current (DC) power source. A second electrode is embedded in a bottom half of the dielectric block. A vertical connection is embedded in the dielectric block for electrically coupling the second electrode to the first electrode.
    Type: Grant
    Filed: August 10, 2018
    Date of Patent: June 1, 2021
    Assignee: Lam Research Corporation
    Inventors: Alexander Matyushkin, Alexei Marakhtanov, John Patrick Holland, Keith Gaff, Felix Kozakevich
  • Patent number: 10950414
    Abstract: Disclosed are a plasma processing apparatus and a method of manufacturing a semiconductor device using the same. The plasma processing apparatus comprises a chamber, an electrostatic chuck in the chamber and loading a substrate, a plasma electrode generating an upper plasma on the electrostatic chuck; and a hollow cathode between the plasma electrode and the electrostatic chuck, wherein the hollow cathode generates a lower plasma below the upper plasma. The hollow cathode comprises cathode holes each having a size less than a thickness of a plasma sheath of the upper plasma.
    Type: Grant
    Filed: May 18, 2018
    Date of Patent: March 16, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sang Ki Nam, Akira Koshiishi, Kwangyoub Heo, Sunggil Kang, Beomjin Yoo, Sungyong Lim, Vasily Pashkovskiy
  • Patent number: 10825709
    Abstract: An electrostatic chucking method uses a substrate processing apparatus including an electrostatic chuck, a focus ring, a supply unit configured to supply a heat transfer medium to a space formed between the focus ring and the electrostatic chuck, and a plurality of electrodes provided at a region in the electrostatic chuck which corresponds to the focus ring. The electrostatic chucking method includes supplying by the supply unit the heat transfer medium to the space for a plasma processing period for which a plasma for processing the substrate is generated, and applying different voltages to the plurality of electrodes to attract and hold the focus ring on the electrostatic chuck for a period other than the plasma processing period.
    Type: Grant
    Filed: March 22, 2019
    Date of Patent: November 3, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yasuharu Sasaki, Taketoshi Tomioka, Hiroki Kishi, Jisoo Suh
  • Patent number: 10811296
    Abstract: Embodiments described herein generally relate to plasma assisted or plasma enhanced processing chambers. More specifically, embodiments herein relate to electrostatic chucking (ESC) substrate supports configured to provide pulsed DC voltage to a substrate, and methods of biasing the substrate using the pulsed DC voltage, during plasma assisted or plasma enhanced semiconductor manufacturing processes.
    Type: Grant
    Filed: September 20, 2017
    Date of Patent: October 20, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Jaeyong Cho, Philip Allan Kraus
  • Patent number: 10727029
    Abstract: In one embodiment, the present disclosure is directed to an RF impedance matching network that includes an RF input coupled to an RF source, an RF output coupled to a plasma chamber, and an electronically variable capacitor (EVC). A first control circuit controls the EVC and is separate and distinct from a second control circuit controlling the RF source. To assist in causing an impedance match between the RF source and the plasma chamber, the first control circuit determines, using a match lookup table with a value based on a detected RF parameter, a new EVC configuration for providing a new EVC capacitance. To further cause the impedance match, the second control circuit alters the variable frequency of the RF source, but operates independently from the first control circuit.
    Type: Grant
    Filed: July 29, 2019
    Date of Patent: July 28, 2020
    Assignee: RENO TECHNOLOGIES, INC
    Inventors: Michael Gilliam Ulrich, Imran Ahmed Bhutta
  • Patent number: 10529596
    Abstract: A plasma processing apparatus includes a process container configured to accommodate a target substrate and to be vacuum-exhausted. A first electrode and a second electrode are disposed opposite each other within the process container. The first electrode includes an outer portion and an inner portion both facing the second electrode such that the outer portion surrounds the inner portion. An RF power supply is configured to apply an RF power to the outer portion of the first electrode. A DC power supply is configured to apply a DC voltage to the inner portion of the first electrode. A process gas supply unit is configured to supply a process gas into the process container, wherein plasma of the process gas is generated between the first electrode and the second electrode.
    Type: Grant
    Filed: February 14, 2017
    Date of Patent: January 7, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Naoki Matsumoto, Chishio Koshimizu, Akira Koshiishi
  • Patent number: 10436751
    Abstract: A dielectric barrier discharge ionization detector Includes: a dielectric tube; a high-voltage electrode connected to an AC power source and circumferentially formed on the outer wall of the dielectric tube; upstream-side and downstream-side ground electrodes and circumferentially formed above and below the high-voltage electrode; a discharging section for generating electric discharge to create plasma, from a gas containing argon; and a charge-collecting section for ionizing sample-gas components by the plasma and detecting an ion current formed by the ionized components. The detector also satisfies one or both of the following conditions: the upstream-side ground electrode is longer than a creeping discharge initiation distance between a tube-line tip member at the upper end of the dielectric tube and the high-voltage electrode; or the downstream-side ground electrode is longer than a creeping discharge initiation distance between the high-voltage electrode and the charge-collecting section.
    Type: Grant
    Filed: September 7, 2017
    Date of Patent: October 8, 2019
    Assignee: Shimadzu Corporation
    Inventor: Kei Shinada
  • Patent number: 10418224
    Abstract: In the plasma etching method, a sample is placed on a stage in a chamber. A first gas is introduced into the chamber. Electric field is supplied within the chamber to plasma is generated from the first gas. A first RF power of a first frequency, which is for generating a bias voltage in the sample for etching the sample with radicals which are generated in the plasma while the plasma is generated, is supplied to the stage. A second gas is introduced from a position in outer periphery of a surface of the stage, on which the sample is placed. A second RF power of a second frequency higher than the first frequency and capable of generating plasma from the second gas above the stage that allows radicals generated in the plasma generated from the second gas to be supplied in the outer periphery, is supplied to the stage.
    Type: Grant
    Filed: April 12, 2018
    Date of Patent: September 17, 2019
    Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
    Inventors: Naoyuki Kofuji, Ken'etsu Yokogawa, Nobuyuki Negishi, Masami Kamibayashi, Masatoshi Miyake
  • Patent number: 10399254
    Abstract: A seamless mold manufacturing method of the invention is a seamless mold manufacturing method having the steps of forming a thermal reaction type resist layer on a sleeve-shaped mold, and exposing using a laser and developing the thermal reaction type resist layer and thereby forming a fine mold pattern, and is characterized in that the thermal reaction type resist layer is comprised of a thermal reaction type resist having a property of reacting in predetermined light intensity or more in a light intensity distribution in a spot diameter of the laser.
    Type: Grant
    Filed: December 31, 2015
    Date of Patent: September 3, 2019
    Assignee: ASAHI KASEI KABUSHIKI KAISHA
    Inventors: Masaru Suzuki, Yoshimichi Mitamura, Masatoshi Maeda
  • Patent number: 10283382
    Abstract: A plasma processing apparatus including an electrostatic chuck supporting a wafer; a focus ring disposed to surround an outer circumferential surface of the wafer; an insulation ring disposed to surround an outer circumferential surface of the focus ring; and an edge ring supporting lower portions of the focus ring and the insulation ring, the edge ring being spaced apart from the electrostatic chuck and surrounding an outer circumferential surface of the electrostatic chuck; wherein the edge ring includes a flow channel containing a fluid therein.
    Type: Grant
    Filed: August 9, 2017
    Date of Patent: May 7, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Young Jin Noh, Kyung Sun Kim, Seung Bo Shim, Yong Woo Lee, Ji Soo Im, Won Young Choi
  • Patent number: 10276352
    Abstract: The present invention concerns a device (10) for the surface treatment of a substrate (1) by dielectric barrier discharge that enables the generation of a cold filamentary plasma at atmospheric pressure, comprising a reaction chamber, in which are positioned means for supporting and/or moving the substrate (2) and at least two electrodes (3, 4) arranged in parallel on either side of the means for supporting and/or moving the substrate (2), of which one electrode (3) is intended to be brought to high voltage and a counter-electrode (4) to be earthed. It is characterised in that the counter-electrode (4) has a width (lce) and a length (Lce) that are respectively smaller than the width (le) and the length (Le) of the electrode (3), and in that the counter-electrode (4) is positioned so that it is enclosed in an orthogonal projection (5) of the electrode (3) on a plane containing the counter-electrode (4).
    Type: Grant
    Filed: December 18, 2013
    Date of Patent: April 30, 2019
    Assignee: AGC INC.
    Inventors: M. Eric Tixhon, M. Eric Michel, M. Joseph LeClercq
  • Patent number: 10224210
    Abstract: A plasma processing system includes a process chamber and a plasma source that generates a plasma in a plasma cavity. The plasma cavity is substantially symmetric about a toroidal axis. The plasma source defines a plurality of outlet apertures on a first axial side of the plasma cavity Plasma products produced by the plasma pass in the axial direction, through the plurality of outlet apertures, from the plasma cavity toward the process chamber. A method of plasma processing includes generating a plasma within a substantially toroidal plasma cavity that defines a toroidal axis, to form plasma products, and distributing the plasma products to a process chamber through a plurality of outlet openings substantially azimuthally distributed about a first axial side of the plasma cavity, directly into a process chamber.
    Type: Grant
    Filed: December 9, 2014
    Date of Patent: March 5, 2019
    Assignee: Applied Materials, Inc.
    Inventor: Dmitry Lubomirsky
  • Patent number: 10083853
    Abstract: An Electrostatic Chuck (ESC) in a chamber of a semiconductor manufacturing apparatus is presented for eliminating cooling-gas light-up. One wafer support includes a baseplate connected to a radiofrequency power source, a dielectric block, gas supply channels for cooling the wafer bottom, and first and second electrodes. The dielectric block is situated above the baseplate and supports the wafer when present. The first electrode is embedded in the top half of the dielectric block, where the top surface of the first electrode is substantially parallel to a top surface of the dielectric block, and the first electrode is connected to a DC power source. Further, the second electrode is embedded in a bottom half of the dielectric block, the second electrode being electrically connected to the first electrode, where the bottom surface of the second electrode is substantially parallel to a top surface of the baseplate.
    Type: Grant
    Filed: October 19, 2015
    Date of Patent: September 25, 2018
    Assignee: Lam Research Corporation
    Inventors: Alexander Matyushkin, Alexei Marakhtanov, John Patrick Holland, Keith Gaff, Felix Kozakevich
  • Patent number: 10008369
    Abstract: There is provided an apparatus for cyclical plasma etching of a substrate, the apparatus comprising: a process chamber; a support within the process chamber for receiving the substrate to be etched; a controller for repeatedly applying a dosing step and a bombardment steps respectively; a dosing controller for controlling the flow of a process gas in the dosing step such that the substrate is exposed to a maximum dose of process gas in use of 1000 Langmuirs and said dose is controllable within an accuracy of 1 Langmuir; and a first signal generator coupled to the process chamber and a second signal generator coupled to the support within the process chamber, the first and second signal generators being configured such that in use positions ions of an plasma active species within the process chamber have a substrate bombardment energy in the range of 10 eV to 100 eV which is controllable within an accuracy of 5 eV. There is also provided a method for cyclical plasma etching of a substrate using said apparatus.
    Type: Grant
    Filed: August 26, 2016
    Date of Patent: June 26, 2018
    Assignee: Oxford Instruments Nanotechnology Tools Limited
    Inventors: Andrew L. Goodyear, Michael J. Cooke
  • Patent number: 9960014
    Abstract: In the plasma etching method, a sample is placed on a stage in a chamber. A first gas is introduced into the chamber. Electric field is supplied within the chamber to plasma is generated from the first gas. A first RF power of a first frequency, which is for generating a bias voltage in the sample for etching the sample with radicals which are generated in the plasma while the plasma is generated, is supplied to the stage. A second gas is introduced from a position in outer periphery of a surface of the stage, on which the sample is placed. A second RF power of a second frequency higher than the first frequency and capable of generating plasma from the second gas above the stage that allows radicals generated in the plasma generated from the second gas to be supplied in the outer periphery, is supplied to the stage.
    Type: Grant
    Filed: December 6, 2016
    Date of Patent: May 1, 2018
    Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
    Inventors: Naoyuki Kofuji, Ken'etsu Yokogawa, Nobuyuki Negishi, Masami Kamibayashi, Masatoshi Miyake
  • Patent number: 9927481
    Abstract: A method for modeling cable loss is described. The method includes receiving a measurement of reverse power and forward power at a radio frequency (RF) generator. The method further includes computing theoretical power delivered to a matching network as a difference between the forward power and the reverse power and calculating a ratio of the reverse power to the forward power to generate an RF power reflection ratio. The method further includes identifying a cable power attenuation fraction based on a frequency of the RF generator and calculating a cable power loss as a function of the RF power reflection ratio, the cable power attenuation fraction, and the theoretical power. The method includes calculating actual power to be delivered to the impedance matching network based on the theoretical power and the cable power loss and sending the calculated actual power to the RF generator to generate an RF signal.
    Type: Grant
    Filed: February 8, 2017
    Date of Patent: March 27, 2018
    Assignee: Lam Research Corporation
    Inventors: Arthur M. Howald, John C. Valcore, Jr.
  • Patent number: 9773643
    Abstract: Provided are apparatuses and methods for performing deposition and etch processes in an integrated tool. An apparatus may include a plasma processing chamber that is a capacitively-coupled plasma reactor, and the plasma processing chamber can include a showerhead that includes a top electrode and a pedestal that includes a bottom electrode. The apparatus may be configured with an RF hardware configuration so that an RF generator may power the top electrode in a deposition mode and power the bottom electrode in an etch mode. In some implementations, the apparatus can include one or more switches so that at least an HFRF generator is electrically connected to the showerhead in a deposition mode, and the HFRF generator and an LFRF generator is electrically connected to the pedestal and the showerhead is grounded in the etch mode.
    Type: Grant
    Filed: June 30, 2016
    Date of Patent: September 26, 2017
    Assignee: Lam Research Corporation
    Inventors: Akhil Singhal, Patrick A. Van Cleemput, Martin E. Freeborn, Bart J. van Schravendijk
  • Patent number: 9748077
    Abstract: Disclosed is an apparatus and method of processing substrate, wherein the apparatus comprises a process chamber; a substrate supporter for supporting at least one of substrates, wherein the substrate supporter is provided in the process chamber, and is rotated at a predetermined direction; a chamber lid confronting with the substrate supporter, the chamber lid for covering the process chamber; and a gas distributor having a plurality of gas distribution modules for distributing gas to the substrate, wherein the plurality of gas distribution modules are connected to the chamber lid, wherein each of the gas distribution modules includes a power source electrode and a ground electrode confronting each other, a plasma discharge space is formed between the power source electrode and the ground electrode, and the plasma discharge space is not overlapped with a thin film formation region of the substrate supported by the substrate supporter.
    Type: Grant
    Filed: May 28, 2013
    Date of Patent: August 29, 2017
    Assignee: JUSUNG ENGINEERING CO., LTD.
    Inventors: Jeung Hoon Han, Chul Joo Hwang, Seung Hoon Seo, Sang Don Lee
  • Patent number: 9704731
    Abstract: A plasma processing method is provided for a plasma processing apparatus which includes a plurality of upstream-side expansion valves and a plurality of downstream-side expansion valves connected to respective refrigerant inlets and respective refrigerant outlets to adjust a flow rate or a pressure of a refrigerant flowing into the respective refrigerant inlets and a flow rate or a pressure of a refrigerant flowing out from the respective refrigerant outlets. The method includes adjusting openings of the upstream-side expansion valves and openings of the downstream-side expansion valves so that no change in flow rate of the refrigerant occurs in a plurality of refrigerant channels between the plurality of upstream-side expansion valves and the plurality of downstream-side expansion valves via the plurality of refrigerant channels in a refrigeration cycle allowing the refrigerant to flow therein.
    Type: Grant
    Filed: October 15, 2014
    Date of Patent: July 11, 2017
    Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
    Inventors: Go Miya, Masaru Izawa, Takumi Tandou
  • Patent number: 9603231
    Abstract: A processing apparatus includes a substrate supporting unit that supports a substrate in a processing space in which the substrate is processed, a first partitioning member that includes a ceiling portion having an opening and partitions the processing space from an outer space, and a second partitioning member that is attached to the first partitioning member so as to close the opening and partition the processing space from the outer space together with the first partitioning member. The second partitioning member is attached to the first partitioning member so that the second partitioning member is removable from the first partitioning member by moving the second partitioning member toward a space which a lower surface of the ceiling portion faces.
    Type: Grant
    Filed: September 18, 2013
    Date of Patent: March 21, 2017
    Assignee: Canon Anelva Corporation
    Inventors: Tomoaki Osada, Masami Hasegawa
  • Patent number: 9368364
    Abstract: A tunable plasma etch process includes generating a plasma in a controlled flow of a source gas including NH3 and NF3 to form a stream of plasma products, controlling a flow of un-activated NH3 that is added to the stream of plasma products to form an etch gas stream; and controlling pressure of the etch gas stream by adjusting at least one of the controlled flow of the source gas and the flow of un-activated NH3 until the pressure is within a tolerance of a desired pressure. An etch rate of at least one of polysilicon and silicon dioxide by the etch gas stream is adjustable by varying a ratio of the controlled flow of the source gas to the flow of un-activated NH3.
    Type: Grant
    Filed: December 10, 2014
    Date of Patent: June 14, 2016
    Assignee: Applied Materials, Inc.
    Inventors: Seung Park, Anchuan Wang
  • Patent number: 9091928
    Abstract: A method for manufacturing a planarized reflective layer disposed on a hinge layer connected to a hinge support post (210) is disclosed. The method comprises depositing a first layer of a first material to form the hinge layer (206), patterning a first mask over the first layer and selectively removing the first material not covered by any of the first mask to form a plurality of recesses, depositing a second layer of a second material over the first layer, patterning a second mask over the second layer and selectively removing the second material not covered by any of the second mask to form a hinge component (212), depositing a reflective layer (202) of a reflective material over the second layer and planarizing the reflective layer (202) to form a substantially planar reflective surface.
    Type: Grant
    Filed: December 28, 2012
    Date of Patent: July 28, 2015
    Assignee: Silterra Malaysia Sdn. Bhd.
    Inventors: Mohanraj Soundara Pandian, Wee Song Tay, Muniandy Shunmugam, Venkatesh Madhaven, Arjun Kumar Kantimahanti
  • Patent number: 9090460
    Abstract: Plasma processing systems and methods for using pre-dissociated and/or pre-ionized tuning gases are disclosed herein. In one embodiment, a plasma processing system includes a reaction chamber, a support element in the reaction chamber, and one or more cathode discharge assemblies in the reaction chamber. The reaction chamber is configured to produce a plasma in an interior volume of the chamber. The support element positions a microelectronic workpiece in the reaction chamber, and the cathode discharge assembly supplies an at least partially dissociated and/or ionized tuning gas to the workpiece in the chamber.
    Type: Grant
    Filed: May 8, 2014
    Date of Patent: July 28, 2015
    Assignee: Micron Technology, Inc.
    Inventor: Mark Kiehlbauch
  • Patent number: 9053909
    Abstract: An activated gas injector includes a flow passage defining member partitioned into a gas activation passage and a gas introduction passage by a partition wall; a gas introduction port through which a process gas is introduced into the gas introduction passage; a pair of electrodes to be supplied with electrical power to activate the process gas, wherein the electrodes extend along the partition wall in the gas activation passage; through-holes formed in the partition wall and arranged along a longitudinal direction of the electrodes, wherein the through-holes allow the process gas to flow from the gas introduction passage to the gas activation passage; and gas ejection holes provided in the gas activation passage along the longitudinal direction of the electrodes, wherein the gas ejection holes allow the process gas activated in the gas activation passage to be ejected therefrom.
    Type: Grant
    Filed: August 26, 2009
    Date of Patent: June 9, 2015
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Hitoshi Kato, Yasushi Takeuchi, Shigehiro Ushikubo, Hiroyuki Kikuchi
  • Patent number: 9039864
    Abstract: An electrical ground (36) of an RF impedance matching network (33) is connected to a connection area (50) on the grounded chamber cover (18) of a plasma chamber. The connection area is offset away from the center of the chamber cover toward a workpiece passageway (20). Alternatively, an RF power supply (30) has an electrically grounded output (32) that is connected to a connection area (52) on the chamber cover having such offset. Alternatively, an RF transmission line (37) has an electrically grounded conductor (39) that is connected between a grounded output of an RF power supply and a connection area (52) on the chamber cover having such offset.
    Type: Grant
    Filed: September 28, 2010
    Date of Patent: May 26, 2015
    Assignee: Applied Materials, Inc.
    Inventors: Jonghoon Baek, Beom Soo Park, Sam Hyungsam Kim
  • Patent number: 9038567
    Abstract: The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of O2 or N2 are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.
    Type: Grant
    Filed: April 25, 2014
    Date of Patent: May 26, 2015
    Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
    Inventors: Hiroyuki Kobayashi, Kenji Maeda, Kenetsu Yokogawa, Masaru Izawa, Tadamitsu Kanekiyo
  • Publication number: 20150135993
    Abstract: A method of treating particles by disaggregating, deagglomerating, exfoliating, cleaning, functionalising, doping, decorating and/or repairing said particles, in which the particles are subjected to plasma treatment in a treatment chamber containing a plurality of electrodes which project therein and wherein plasma is generated by said electrodes which are moved during the plasma treatment to agitate the particles.
    Type: Application
    Filed: November 12, 2014
    Publication date: May 21, 2015
    Inventors: John Buckland, Dylan Walters
  • Patent number: 9034772
    Abstract: A method of etching a substrate by plasma via a mask having a predetermined pattern at back of a silicon layer of the substrate, a semiconductor device being formed at front of which supported by a support substrate, includes a main etching step in which plasma is generated by supplying a process gas including a mixed gas whose flow ratio of fluorine compound gas, oxygen gas and silicon fluoride gas is 2:1:1.5 or a process gas including a mixed gas in which at least the ratio of one of the oxygen gas and the silicon fluoride gas, using the fluorine compound gas as a standard, is larger than the above ratio, and the substrate is etched by the plasma; and an over etching step in which the substrate is further etched by plasma while applying a high frequency for bias whose frequency is less than or equal to 400 kHz.
    Type: Grant
    Filed: July 18, 2013
    Date of Patent: May 19, 2015
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Koji Maruyama, Mikio Yamamoto
  • Patent number: 9021984
    Abstract: A plasma processing apparatus includes a processing chamber; a lower electrode provided in the processing chamber and having a base made of a conductive metal to which a high frequency power is applied, the lower electrode also serving as a mounting table for mounting thereon a target substrate; an upper electrode provided in the processing chamber to face the lower electrode; and a focus ring disposed above the lower electrode to surround the target substrate. An electrical connection mechanism is provided between the base of the lower electrode and the focus ring to electrically connect the base of the lower electrode to the focus ring through a current control element, and generates a DC current in accordance with a potential difference.
    Type: Grant
    Filed: March 30, 2011
    Date of Patent: May 5, 2015
    Assignee: Tokyo Electron Limited
    Inventors: Takashi Yamamoto, Shunsuke Mizukami, Ryuji Ohtani, Kimlhiro Higuchi
  • Patent number: 8992723
    Abstract: For coupling RF power from an RF input of a plasma chamber to the interior of a plasma chamber, an RF bus conductor is connected between the RF input and a plasma chamber electrode. In one embodiment, an RF return bus conductor is connected to an electrically grounded wall of the chamber, and the RF bus conductor and the RF return bus conductor have respective surfaces that are parallel and face each other. In another embodiment, the RF bus conductor has a transverse cross section having a longest dimension oriented perpendicular to the surface of the plasma chamber electrode that is closest to the RF bus conductor.
    Type: Grant
    Filed: February 13, 2010
    Date of Patent: March 31, 2015
    Assignee: Applied Material, Inc.
    Inventors: Carl A. Sorensen, Jozef Kudela, Robin L. Tiner, Suhail Anwar, John M. White
  • Patent number: 8991331
    Abstract: A method for providing steerability in a plasma processing environment during substrate processing is provided. The method includes managing, power distribution by controlling power being delivered into the plasma processing environment through an array of electrical elements. The method also includes directing gas flow during substrate processing by controlling the amount of gas flowing through an array of gas injectors into the plasma processing environment, wherein individual ones of the array of gas injectors are interspersed between the array of electrical elements. The method further includes controlling gas exhausting during substrate processing by managing amount of gas exhaust being removed by an array of pumps, wherein the array of electrical elements, the array of gas injectors, and the array of pumps are arranged to create a plurality of plasma regions, each plasma region being substantially similar, thereby creating a uniform plasma region across the substrate.
    Type: Grant
    Filed: August 16, 2013
    Date of Patent: March 31, 2015
    Assignee: Lam Research Corporation
    Inventor: Neil Martin Paul Benjamin
  • Patent number: 8986495
    Abstract: A plasma processing apparatus includes an upper electrode that is installed within a processing chamber so as to face a lower electrode, supplies a gas through a plurality of gas supply holes provided in a facing surface and is vertically movable; a cover body installed above the upper electrode so as to airtightly seal a top opening of the processing chamber; a multiple number of gas exhaust holes provided in the facing surface; a ring-shaped member that is arranged along a circumference of the upper electrode, is vertically movable along with the upper electrode, and forms, at a lowered position, a processing space surrounded by the lower electrode, the upper electrode and the ring-shaped member; a multiplicity of gas supply holes opened in an inner wall of the ring-shaped member; and a plurality of gas exhaust holes opened in an inner wall of the ring-shaped member.
    Type: Grant
    Filed: December 2, 2010
    Date of Patent: March 24, 2015
    Assignee: Tokyo Electron Limited
    Inventor: Hachishiro Iizuka
  • Patent number: 8980044
    Abstract: A plasma reactor having a reactor chamber and an electrostatic chuck having a surface for holding a workpiece inside the chamber includes inner and outer zone backside gas pressure sources coupled to the electrostatic chuck for applying a thermally conductive gas under respective pressures to respective inner and outer zones of a workpiece-surface interface formed whenever a workpiece is held on the surface, and inner and outer evaporators inside respective inner and outer zones of the electrostatic chuck and a refrigeration loop having respective inner and cuter expansion valves for controlling flow of coolant through the inner and outer evaporators respectively. The reactor further includes inner and outer zone temperature sensors in inner and outer zones of the electrostatic chuck and a thermal model capable of simulating heat transfer through the inner and outer zones, respectively, between the evaporator and the surface based upon measurements from the inner and outer temperature sensors, respectively.
    Type: Grant
    Filed: August 12, 2010
    Date of Patent: March 17, 2015
    Assignee: BE Aerospace, Inc.
    Inventors: Paul Lukas Brillhart, Richard Fovell, Hamid Tavassoli, Douglas A. Buchberger, Jr., Douglas H. Burns, Kallol Bera, Daniel J. Hoffman, Kenneth W. Cowans, William W. Cowans, Glenn W. Zubillaga, Isaac Millan
  • Patent number: 8968513
    Abstract: An intensity distribution of an electric field of a high frequency power used for generating plasma is controlled by using an electrode made of a homogeneous material and a moving body. There is provided a plasma processing apparatus for introducing a processing gas into an evacuable processing chamber 100 and generating plasma by a high frequency power and performing a plasma process on a wafer W by the plasma. The plasma processing apparatus includes a dielectric base 105a having a multiple number of fine holes A; a varying member 200 as the moving body provided with a multiple number of rod-shaped members B capable of being inserted into and separated from the fine holes A; and a driving mechanism 215 configured to drive the varying member 200 to allow the rod-shaped members B to be inserted into and separated from the fine holes A.
    Type: Grant
    Filed: March 14, 2011
    Date of Patent: March 3, 2015
    Assignee: Tokyo Electron Limited
    Inventor: Daisuke Hayashi
  • Patent number: 8967081
    Abstract: Device for treating substrates, comprising a changer having controlled pressure and temperature, a substrate support which is provided in the chamber, the chamber comprising a gas inlet for carrying out a vapor phase deposition, and an upper wall of the chamber provided with a plurality of first channels connected to a first inlet and a plurality of second channels connected to a second inlet, the first and second channels opening into the chamber and being regularly distributed in the upper wall, a heating element provided above the upper wall and a gas discharge ring provided between the upper wall and the substrate support, the upper wall begin electrically conductive and insulated relative to the substrate support so as to be able to apply a voltage between the upper wall and the substrate support.
    Type: Grant
    Filed: April 22, 2009
    Date of Patent: March 3, 2015
    Assignee: Altatech Semiconductor
    Inventors: Christophe Borean, Jean-Luc Delcarri
  • Patent number: 8968514
    Abstract: A gas distribution device for a substrate treating apparatus includes a plurality of plasma source electrodes having a first side surface; a plurality of plasma ground electrodes having a second side surface facing the first side surface, the plurality of plasma ground electrodes being alternately arranged with the plurality of plasma source electrodes; and a first gas providing part disposed at each plasma source electrode and including a first space, a plurality of first through-holes in communication with the first space for providing a first process gas between one of the plurality of plasma source electrodes and a corresponding ones of the plurality of plasma ground electrodes, and a first discharging portion at the first side surface.
    Type: Grant
    Filed: June 23, 2011
    Date of Patent: March 3, 2015
    Assignee: Jusung Engineering Co., Ltd.
    Inventors: Jae-Chul Do, Bu-Il Jeon, Myung-Gon Song, Jung-Rak Lee
  • Patent number: 8969753
    Abstract: A plasma treatment installation including at least two stationary workpiece holders adapted for controlled rotation about their respective axis and having supporting plates for supporting workpieces for the treatment thereof, at least one hood to be set on a workpiece holder that is adapted to enclose each of a plurality of workpiece holders to form a sealed treatment space, and a manipulator for automatically equipping the supporting plates of a workpiece holder with workpieces, while the other workpiece holder is covered by the hood to perform the plasma treatment of the workpieces.
    Type: Grant
    Filed: May 17, 2007
    Date of Patent: March 3, 2015
    Inventor: Siegfried Straemke
  • Publication number: 20150007857
    Abstract: A method of cleaning a substrate processing apparatus including a gas supply part configured to eject a process gas via gas passages formed in the gas supply part, and divided into first and second regions corresponding to first and second in-plane positions of a substrate, respectively, includes cleaning a first one of the gas passages corresponding to the first region with the plasma of the process gas by causing a first flow rate of the process gas supplied to the first region to be lower than a second flow rate of the process gas supplied to the second region and cleaning a second one of the gas passages corresponding to the second region with the plasma by causing a third flow rate of the process gas supplied to the first region to be higher than a fourth flow rate of the process gas supplied to the second region.
    Type: Application
    Filed: June 27, 2014
    Publication date: January 8, 2015
    Inventors: Akihiro Kikuchi, Mitsuhiro Tomura
  • Publication number: 20150011097
    Abstract: A plasma processing system having a plasma processing chamber configured for processing a substrate is provided. The plasma processing system includes at least an upper electrode and a lower electrode for processing the substrate. The substrate is disposed on the lower electrode during plasma processing, where the upper electrode and the substrate forms a first gap. The plasma processing system also includes an upper electrode peripheral extension (UE-PE). The UE-PE is mechanically coupled to a periphery of the upper electrode, where the UE-PE is configured to be non-coplanar with the upper electrode. The plasma processing system further includes a cover ring. The cover ring is configured to concentrically surround the lower electrode, where the UE-PE and the cover ring forms a second gap.
    Type: Application
    Filed: September 24, 2014
    Publication date: January 8, 2015
    Inventors: Andreas Fischer, Eric Hudson
  • Patent number: 8926789
    Abstract: An apparatus generating a plasma for removing fluorinated polymer from a substrate is provided. The apparatus includes a powered electrode assembly, which includes a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The apparatus also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated. The first wire mesh is shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, which has an outlet at one end for providing the plasma to remove the fluorinated polymer.
    Type: Grant
    Filed: March 30, 2010
    Date of Patent: January 6, 2015
    Assignee: Lam Research Corporation
    Inventors: Hyungsuk Alexander Yoon, John Boyd, Andras Kuthi, Andrew D. Bailey, III
  • Patent number: 8920611
    Abstract: The method of performing physical vapor deposition on a workpiece includes performing at least one of the following: (a) increasing ion density over a workpiece center while decreasing ion density over a workpiece edge by decreasing impedance to ground at a target source power frequency fs through a bias multi-frequency impedance controller relative to the impedance to ground at the source power frequency fs through the side wall; or (b) decreasing ion density over the workpiece center while increasing ion density over the workpiece edge by increasing the impedance to ground at fs through the bias multi-frequency impedance controller relative to the impedance to ground at fs through the side wall.
    Type: Grant
    Filed: July 15, 2008
    Date of Patent: December 30, 2014
    Assignee: Applied Materials, Inc.
    Inventors: John C. Forster, Daniel J. Hoffman, John A. Pipitone, Xianming Tang, Rongjun Wang
  • Patent number: RE46339
    Abstract: The present invention provides a method for plasma dicing a substrate, the method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing a work piece onto the work piece support, said work piece having a support film, a frame and the substrate; loading the work piece onto the work piece support; applying a tensional force to the support film; clamping the work piece to the work piece support; generating a plasma using the plasma source; and etching the work piece using the generated plasma.
    Type: Grant
    Filed: September 15, 2015
    Date of Patent: March 14, 2017
    Assignee: Plasma-Therm LLC
    Inventors: Rich Gauldin, Chris Johnson, David Johnson, Linnell Martinez, David Pays-Volard, Russell Westerman, Gordon Grivna