Boron, Phosphorous Or Silicon Containing Product Produced Patents (Class 204/157.45)
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Patent number: 10068968Abstract: Nanotube filaments comprising carbon, boron and nitrogen of the general formula BxCyNz, having high-aspect ratio and high-crystallinity produced by a pressurized vapor/condenser method and a process of production. The process comprises thermally exciting a boron-containing target in a chamber containing a carbon source and nitrogen at a pressure which is elevated above atmospheric pressure.Type: GrantFiled: September 22, 2011Date of Patent: September 4, 2018Assignee: JEFFERSON SCIENCE ASSOCIATES, LLCInventors: Kevin Jordan, R. Roy Whitney, Michael W Smith, Jae-Woo Kim, Cheol Park
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Patent number: 8986513Abstract: A process for producing boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula BxCyNz. The process utilizes a combination of laser light and nitrogen gas flow to support a boron ball target during heating of the boron ball target and production of a boron vapor plume which reacts with nitrogen or nitrogen and carbon to produce boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula BxCyNz.Type: GrantFiled: June 18, 2013Date of Patent: March 24, 2015Assignees: Jefferson Science Associates, LLC, The United States of America as Represented by the Administration of NASAInventors: R. Roy Whitney, Kevin Jordan, Michael W. Smith
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Publication number: 20140178284Abstract: The invention relates to a method for producing hexachlorodisilane or Ge2CI6, which is characterized in that, in a gas containing SiCI4 or GeCI4, a) a non-thermal plasma is generated by means of an alternating voltage of the frequency f, and wherein at least one electromagnetic pulse having the repetition rate g is coupled into the plasma, the voltage component of which pulse has an edge steepness in the rising edge of 10 V ns-1 to 1 kV ns-1 and a pulse width b of 500 ns to 100 ?s, wherein a liquid phase is obtained, and b) pure hexachlorodisilane or Ge2Cl6 is obtained from the liquid phase.Type: ApplicationFiled: May 15, 2012Publication date: June 26, 2014Applicant: Evonik Degussa GmbHInventors: Jürgen Erwin Lang, Hartwing Rauleder, Ekkehard Mueh
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Patent number: 8679300Abstract: An integrated production apparatus for production of boron nitride nanotubes via the pressure vapor-condenser method. The apparatus comprises: a pressurized reaction chamber containing a continuously fed boron containing target having a boron target tip, a source of pressurized nitrogen and a moving belt condenser apparatus; a hutch chamber proximate the pressurized reaction chamber containing a target feed system and a laser beam and optics.Type: GrantFiled: September 22, 2011Date of Patent: March 25, 2014Assignees: Jefferson Science Associates, LLC, The United States of America as represented by the Administrator of NasaInventors: Michael W. Smith, Kevin C. Jordan
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Patent number: 8673053Abstract: Disclosed is a method for hardening an interface of a carbon material by using nano silicon carbide coating. A carbon material-aluminum composite prepared by the disclosed method is light in weight, and has a high dynamic strength, and thus can be applied to currently used cars and aluminum wheels. Furthermore, the composite can be utilized as a material for aircrafts, spacecraft, ships, etc. requiring a high strength.Type: GrantFiled: October 11, 2011Date of Patent: March 18, 2014Assignees: Research & Business Foundation of Sungkyunkwan University, Dayou Smart Aluminum Co, Ltd.Inventors: Young Hee Lee, Kang Pyo So, Eun Sun Kim, Young Woo Park
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Patent number: 8673120Abstract: A process for producing boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula BxCyNz. The process utilizes a combination of laser light and nitrogen gas flow to support a boron ball target during heating of the boron ball target and production of a boron vapor plume which reacts with nitrogen or nitrogen and carbon to produce boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula BxCyNz.Type: GrantFiled: September 22, 2011Date of Patent: March 18, 2014Assignees: Jefferson Science Associates, LLC, The United States of America, as Represented by the Administrator of NASAInventors: R. Roy Whitney, Kevin Jordan, Michael W. Smith
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Patent number: 8669164Abstract: Microelectronic structures and devices, and method of fabricating a three-dimensional microelectronic structure is provided, comprising passing a first precursor material for a selected three-dimensional microelectronic structure into a reaction chamber at temperatures sufficient to maintain said precursor material in a predominantly gaseous state; maintaining said reaction chamber under sufficient pressures to enhance formation of a first portion of said three-dimensional microelectronic structure; applying an electric field between an electrode and said microelectronic structure at a desired point under conditions whereat said first portion of a selected three-dimensional microelectronic structure is formed from said first precursor material; positionally adjusting either said formed three-dimensional microelectronic structure or said electrode whereby further controlled growth of said three-dimensional microelectronic structure occurs; passing a second precursor material for a selected three-dimensional miType: GrantFiled: April 2, 2010Date of Patent: March 11, 2014Assignee: Los Alamos National Security, LLCInventors: James L. Maxwell, Chris R. Rose, Marcie R. Black, Robert W. Springer
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Patent number: 8337673Abstract: The invention relates to the synthesis of silicon-containing nanoparticles by laser pyrolysis. For this purpose: a precursor (SiH4) containing the element silicon is conveyed, by a transport fluid (He), into a pyrolysis reactor (REAC); laser radiation (LAS) is applied, in the reactor, to a mixture that the transport fluid and the precursor form; and silicon-containing nanoparticles (nP) are recovered at the exit of the reactor. In particular, the power of the laser radiation is controlled. Furthermore, the effective pulse duration is controlled within a laser firing period. Typically, for a power greater than 500 watts and a pulse duration greater than 40% of a laser firing period, nanoparticles having a crystalline structure with a size of less than or of the order of one nanometer are obtained at a rate greater than or of the order of 80 milligrams per hour. Under optimum conditions, a record rate of greater than 740 milligrams per hour was able to be obtained.Type: GrantFiled: May 15, 2008Date of Patent: December 25, 2012Assignee: Commissariat a l'Energie AtomiqueInventors: Nathalie Herlin-Boime, Olivier Sublemontier, Frédéric Lacour
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Publication number: 20120181163Abstract: A method of transferring electrons with a light energy conversion material is described. The material includes a silica porous material having silicon atoms chemically bonded with an organic group that is an electron donor in a skeleton thereof, and an electron acceptor disposed in at least one portion among a pore, the skeleton and the outer circumference of the porous material. The method includes absorbing light energy by the organic group and transferring electrons excited by the light energy to the electron acceptor.Type: ApplicationFiled: February 3, 2012Publication date: July 19, 2012Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHOInventors: Shinji INAGAKI, Masao AOKI, Ken-ichi YAMANAKA, Kiyotaka NAKAJIMA, Masataka OHASHI
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Patent number: 8021522Abstract: The present invention relates to a method for production of silane where particulate quartz in a fluidized bed is treated with a gas containing hydrogen at a temperature below 0° C., with the quartz in the fluidized bed subjected to an alternating electric field having a frequency equal to the intrinsic resonant frequency of at least a part of the quartz particles to create vibrational energy in the particles, thereby causing a chemical reaction between quartz and hydrogen to produce silane. The invention also relates to an apparatus for carrying out the method.Type: GrantFiled: February 21, 2007Date of Patent: September 20, 2011Assignee: Elkem Solar ASInventors: Orvar Braaten, Gunnar Braaten, legal representative, Arne Kjekshus, Tore Wessel-Berg
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Publication number: 20110206591Abstract: The invention is generally related to process for generating one or more molecules having the formula SixHy, SixDy, SixHyDz, and mixtures thereof, where x,y and z are integers ?1, H is hydrogen and D is deuterium, such as silane, comprising the steps of: providing a silicon containing material, wherein the silicon containing material includes at least 20 weight percent silicon atoms based on the total weight of the silicon containing material; generating a plasma capable of vaporizing a silicon atom, sputtering a silicon atom, or both using a plasma generating device; and contacting the plasma to the silicon containing material in a chamber having an atmosphere that includes at least about 0.5 mole percent hydrogen atoms and/or deuterium atoms based on the total moles of atoms in the atmosphere; so that a molecule having the formula SixHy; (e.g., silane) is generated. The process preferably includes a step of removing one or more impurities from the SixHy (e.g.Type: ApplicationFiled: February 4, 2011Publication date: August 25, 2011Inventors: Richard M. Laine, Dean Richard Massey, Peter Young Peterson
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Publication number: 20110198211Abstract: Reactors for conducting thermochemical processes with solar heat input, and associated systems and methods. A system in accordance with a particular embodiment include a reactor having a reaction zone, a reactant source coupled in fluid in communication with the reactant zone, and a solar concentrator having at least one concentrator surface positionable to direct solar energy to a focal area. The system can further include an actuator coupled to the solar concentrator to move the solar concentrator relative to the sun, and a controller operatively coupled to the actuator.Type: ApplicationFiled: February 14, 2011Publication date: August 18, 2011Applicant: McAlister Technologies, LLCInventor: Roy Edward McAlister
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Publication number: 20110150740Abstract: The present invention relates to a halogenated polysilane as a pure compound or a mixture of compounds each having at least one direct Si—Si bond, whose substituents consist exclusively of halogen or of halogen and hydrogen and in the composition of which the atomic ratio of substituent to silicon is at least 1:1.Type: ApplicationFiled: May 26, 2009Publication date: June 23, 2011Applicant: Spawnt Private S.a.r.lInventors: Norbert Auner, Christian Bauch, Gerd Lippold, Rumen Deltschew, Seyed-Javad Mohsseni-Ala
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Patent number: 7947243Abstract: Based on designs concerning boron nitride thin-films each including boron nitride crystals in acute-ended shapes excellent in field electron emission properties, and designs of emitters adopting such thin-films, it is aimed at appropriately controlling a distribution state of such crystals to thereby provide an emitter having an excellent efficiency and thus requiring only a lower threshold electric field for electron emission. In a design of a boron nitride thin-film emitter comprising crystals that are each represented by a general formula BN, that each include sp3 bonded boron nitride, sp2 bonded boron nitride, or a mixture thereof, and that each exhibit an acute-ended shape excellent in field electron emission property; there is controlled an angle of a substrate relative to a reaction gas flow upon deposition of the emitter from a vapor phase, thereby controlling a distribution state of the crystals over a surface of the thin-film.Type: GrantFiled: December 21, 2005Date of Patent: May 24, 2011Assignee: National Institute for Materials ScienceInventors: Shojiro Komatsu, Yusuke Moriyoshi, Katsuyuki Okada
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Publication number: 20100304217Abstract: The present invention provides an active material which can increase the discharge capacity of a lithium-ion secondary battery as compared with the case using conventional LiMnPO4 as a positive electrode active material. The active material in accordance with the present invention contains a crystallite of LiMnPO4, the crystallite having a size of 20 to 93 nm in a direction perpendicular to a (060) plane thereof.Type: ApplicationFiled: May 21, 2010Publication date: December 2, 2010Applicant: TDK CORPORATIONInventors: Hisashi Suzuki, Keitaro Otsuki, Masayoshi Hirano
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Publication number: 20100282321Abstract: The invention describes a microsphere with diameter from 0.1 to 50 micrometers, made of a material selected from the group consisting of: silicon, doped silicon, SixGe1-x wherein 0?x?1, and SixH1-x wherein 0.5?x?1, that is able to work as optical microcavity with resonating Mie modes for wavelengths from 1 to 160 micrometers, and a photonic sponge based on the above mentioned microspheres, that scatter light strongly in a wide range of wavelengths, namely from 1 to 160 micrometers. The manufacturing method is based on the decomposition of gaseous precursors by heating means. These microspheres are suitable for fabricating photonic devices like, for instance, photovoltaic cells, photodiodes, lasers and sensors.Type: ApplicationFiled: November 23, 2007Publication date: November 11, 2010Inventors: Roberto Fenollosa Esteve, Francisco Javier Meseguer Rico, Mikael Tymczenko
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Patent number: 7803340Abstract: Crystalline silicon particles of nanometer order usable as a semiconductor element are provided by a method for producing SiOx particles, comprising irradiating SiOx (X is 0.5 or more and less than 2.0) particles each including therein an amorphous silicon particle having a particle diameter of 0.5 to 5 nm with light, and preferably a laser beam, to produce SiOx (X is 0.5 or more and less than 2.0) particles each including therein a crystalline silicon particle having a particle diameter of 1 to 10 nm.Type: GrantFiled: September 22, 2005Date of Patent: September 28, 2010Assignees: The University of Electro-Communications, Denki Kagaku Kogyo Kabushiki KaishaInventors: Shinji Nozaki, Kazuo Uchida, Hiroshi Morisaki, Takashi Kawasaki, Masahiro Ibukiyama
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Patent number: 7767063Abstract: Transparent monolithic aerogels based on silica, the bioderived polymer chitosan, and coordinated ions are employed to serve as a three-dimensional scaffold decorated with metal ions such as Au, Pt and Pd ions. It has also been found that the metal aerogels, such as Au(III) aerogels, can be imaged photolytically to produce nanoparticles.Type: GrantFiled: July 3, 2007Date of Patent: August 3, 2010Assignee: Brown UniversityInventors: William M. Risen, Jr., Xipeng Liu, Chunhua Yao, Yu Zhu
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Publication number: 20100051879Abstract: A plasma treatment has been used to modify the surface of BNNTs. In one example, the surface of the BNNT has been modified using ammonia plasma to include amine functional groups. Amine functionalization allows BNNTs to be soluble in chloroform, which had not been possible previously. Further functionalization of amine-functionalized BNNTs with thiol-terminated organic molecules has also been demonstrated. Gold nanoparticles have been self-assembled at the surface of both amine- and thiol-functionalized boron nitride Nanotubes (BNNTs) in solution. This approach constitutes a basis for the preparation of highly functionalized BNNTs and for their utilization as nanoscale templates for assembly and integration with other nanoscale materials.Type: ApplicationFiled: November 21, 2007Publication date: March 4, 2010Applicant: The Regents od the Univesity of CaliforniaInventors: Toby Sainsbury, Takashi Ikuno, Alexander K. Zettl
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Publication number: 20090314185Abstract: Treated carbon-containing fly ash with reduced surfactant-adsorbing capacity is prepared by processing involving contacting the fly ash with ionized gas prepared from a humid gas feed, such as humid air. Treated fly ash with reduced ammonia content is prepared by processing involving contacting the fly ash with ionized gas prepared from a humid gas feed, such as humid air, or exposing the fly ash to microwave radiation or ultraviolet radiation.Type: ApplicationFiled: April 21, 2009Publication date: December 24, 2009Applicant: MATRIX LLCInventor: John G. Whellock
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Patent number: 7611987Abstract: Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions.Type: GrantFiled: October 5, 2005Date of Patent: November 3, 2009Assignee: Enthone Inc.Inventors: Qingyun Chen, Charles Valverde, Vincent Paneccasio, Nicolai Petrov, Daniel Stritch, Christian Witt, Richard Hurtubise
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Patent number: 7611988Abstract: Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions.Type: GrantFiled: October 5, 2005Date of Patent: November 3, 2009Assignee: Enthone Inc.Inventors: Qingyun Chen, Charles Valverde, Vincent Paneccasio, Nicolai Petrov, Daniel Stritch, Christian Witt, Richard Hurtubise
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Publication number: 20090220423Abstract: The invention relates to a method of activating a photosensitizer, wherein for the photosensitizer nanoparticles of a catalyst capable of catalyzing the production of active oxygen (1) is selected, which is further subjected to irradiation by light (5). Preferably, heterocrystal minerals are used as a source of nanoparticles. Preferably, the photosensitizer is combined with a liquid (3), to which a suitable amount of oxygen gas (4) is added. Still preferably, the photosensitizer is chemically coupled to a DNA-molecule and a suitable anti-metabolic agent. The invention further relates to a method for treating a health disorder using activated photosensitizer provided in nanoparticle form, whereby the activated nanoparticle photosensitizer is administered to a recipient (7).Type: ApplicationFiled: October 27, 2006Publication date: September 3, 2009Inventor: Abdula Kurkayev
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Publication number: 20090084669Abstract: A process for producing a single crystal of semiconductor material, in which fractions of a melt, are kept in liquid form by a pulling coil, solidify on a seed crystal to form the growing single crystal, and granules are melted in order to maintain the growth of the single crystal. The melting granules are passed to the melt after a delay. There is also an apparatus which Is suitable for carrying out the process and has a device which delays mixing of the molten granules and of the melt.Type: ApplicationFiled: September 30, 2008Publication date: April 2, 2009Applicant: Siltronic AGInventor: Wilfried Von Ammon
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Publication number: 20090008237Abstract: Provided is a method for producing an active material for a lithium secondary battery to enable efficient removal of iron impurities, which would become a problem in production of an active material for a lithium secondary battery, and attain a high quality. The method includes removing iron impurities in an active material for a lithium secondary battery by means of magnetic force. With this method, use of a magnetic force-generating device within a recess portion, which composes at least one part of the recess portion, enables efficient removal of only iron impurities. Thus, it is expected that a voltage drop caused by dissolution of iron compounds, i.e. impurities in a positive electrode, and their migration to a negative electrode in a battery, and decreases in charge and discharge efficiencies and a voltage drop owing to precipitation of lithium can be suppressed.Type: ApplicationFiled: July 2, 2008Publication date: January 8, 2009Inventors: Toshikazu Yoshida, Tetsuyuki Murata, Shigeki Matsuta, Yasunobu Iwami, Yoshinori Kida, Hiroyuki Akita, Koji Hasumi
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Patent number: 7419572Abstract: The present invention provides a sp3-bonded boron nitride, represented by a general formula BN, having a hexagonal 5H or 6H polytypic form and having a property of emitting light in ultraviolet region. Its producing method comprises: introducing reaction mixed gas containing boron and nitrogen being diluted with dilution gas into a reaction chamber; and irradiating a surface of a substrate placed in the chamber, a growing surface on the substrate, and a growing spacing region about the growing surface with ultraviolet light to cause gas phase reaction, thereby generating, depositing, or growing the boron nitride on the substrate.Type: GrantFiled: July 1, 2003Date of Patent: September 2, 2008Assignee: National Institute For Materials ScienceInventors: Shojiro Komatsu, Katsuyuki Okada, Yusuke Moriyoshi
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Patent number: 7410899Abstract: Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions.Type: GrantFiled: September 20, 2005Date of Patent: August 12, 2008Assignee: Enthone, Inc.Inventors: Qingyun Chen, Charles Valverde, Vincent Paneccasio, Nicolai Petrov, Daniel Stritch, Christian Witt, Richard Hurtubise
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Publication number: 20080105536Abstract: Element halides are prepared in high yield by contacting an element or compound thereof and carbon or a carbon source with a gas stream containing a halogen or halogen compound in the gaseous state, and heating by means of an alternating magnetic field.Type: ApplicationFiled: November 10, 2005Publication date: May 8, 2008Applicant: WACKER CHEMIE AGInventor: Norbert Auner
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Patent number: 7279077Abstract: A method of forming a chemical composition such as a chemical hydride is described and which includes the steps of selecting a composition having chemical bonds and which is capable of forming a chemical hydride; providing a source of hydrogen; and exposing the selected composition to an amount of ionizing radiation to encourage the changing of the chemical bonds of the selected composition, and chemically reacting the selected composition with the source of hydrogen to facilitate the formation of a chemical hydride.Type: GrantFiled: October 13, 2003Date of Patent: October 9, 2007Assignee: Bettelle Energy Alliance, LLCInventors: Dennis N. Bingham, Bruce M. Wilding, Kerry M. Klingler, William T. Zollinger, Kraig M. Wendt
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Patent number: 7238261Abstract: Transparent monolithic aerogels based on silica, the bioderived polymer chitosan, and coordinated ions are employed to serve as a three-dimensional scaffold decorated with metal ions such as Au, Pt and Pd ions. It has also been found that the metal aerogels, such as Au(III) aerogels, can be imaged photolytically to produce nanoparticles.Type: GrantFiled: November 26, 2004Date of Patent: July 3, 2007Assignee: Brown Technology PartnershipsInventors: William M. Risen, Jr., Xipeng Liu, Chunhua Yao, Yu Zhu
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Patent number: 6699450Abstract: A method for the manufacture of a structure from a carbide of a group IIa, group IIIa, group IVa, group IVb, group Vb, group VIb, group VIIb or group VIIIb carbon reactive element including the steps of: mixing the element with the carbon; and heating the carbon and the element to melt the element so that it reacts with the carbon to form the carbide; wherein, the carbon and element are heated by means of electromagnetic radiation having a frequency below the infrared spectrum. The method does not waste energy by unnecessary heating of the furnace or surrounding mold. The mold itself may be more stable because it is only heated by hot contained material and not by other sources of heat. Resulting formed products are not a sintered product and may approach one hundred percent of theoretical density. The carbon may be in the form of a powder that is mixed with the element or may be a porous carbon structure such as a graphite fiber mat or sheet into which the carbon reactive element is melted.Type: GrantFiled: March 19, 2001Date of Patent: March 2, 2004Assignee: Redunndant Materials, Inc.Inventors: Michael P. Dunn, Michael L. Dunn
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Patent number: 6620395Abstract: A process is provided for recovering phosphoric acid from phospho gypsum produced as a by-product in a phosphoric acid production process and having water soluble P2O5 bound in the crystal lattice thereof. The process includes a) forming a suspension of phospho gypsum in an aqueous medium; b) subjecting the suspension to ultrasonic waves under conditions suitable to shatter the phospho gypsum crystal lattice releasing the bound water soluble P2O5 into the aqueous medium to produce phosphoric acid and a depleted phospho gypsum; c) separating the phosphoric acid from the depleted phospho gypsum and recovering the separated phosphoric acid; and d) optionally further treating the depleted phospho gypsum in a step to further reduce the level of any remaining water soluble P2O5 present in the depleted phospho gypsum. The level of the water soluble P2O5 in the depleted phospho gypsum is reduced to about 0.01% by weight.Type: GrantFiled: April 27, 2001Date of Patent: September 16, 2003Inventor: Dirk Guustaaf Mantel
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Patent number: 6566300Abstract: The present invention relates to a novel titania photocatalyst and its manufacturing method. More specifically, the present invention is to provide the quantum-sized novel titania photocatalyst prepared the steps comprising: (a) titanium tetraisopropoxide is encapsulated in zeolite support by adding citric acid to isopropyl alcohol; (b) ethylene glycol is dissolved herein to obtain a uniformly dispersed mixture solution; and (c) it is encapsulated in zeolite cavities.Type: GrantFiled: May 30, 2001Date of Patent: May 20, 2003Assignee: Korea Research Institute of Chemical TechnologyInventors: Sang-Eon Park, Jin-Soo Hwang, Jong-San Chang, Ji-Man Kim, Dae Sung Kim, Hee Seok Chai
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Patent number: 6266978Abstract: A simple method for producing a synthetic quartz glass having excellent homogeneity and high transmittance, which is useful as an optical material in producing steppers equipped with an ArF excimer laser as a radiation source. A method for producing a synthetic quartz glass for use in ArF excimer laser lithography, which comprises irradiating a highly homogeneous synthetic quartz glass containing less than 60 ppb of Na with ultraviolet radiation having a maximum wavelength of 260 nm for not less than the duration expressed by the equation: Y=(80X−1880)/Z wherein X represents an Na concentration (ppb), Y represents the duration of irradiation (hours), and Z represents the illuminance of an ultraviolet radiation on an irradiated surface (mW/cm2).Type: GrantFiled: September 9, 1999Date of Patent: July 31, 2001Assignees: Heraeus Quarzglas GmbH, Shin-Etsu Quartz Products Co., Ltd.Inventors: Takayuki Oshima, Akira Fujinoki, Hiroyuki Nishimura, Yasuyuki Yaginuma
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Patent number: 6265462Abstract: A method of forming a diffusion barrier on an article of a polymer blend of (i) a high surface energy polymer and (ii) a low surface energy polymer. Most commonly the low surface energy polymer is an organosilicon polymer, as a polysilane or a polysiloxane. The surface of the article is exposed to ozone and ultraviolet radiation to form a diffusion barrier.Type: GrantFiled: January 28, 2000Date of Patent: July 24, 2001Assignee: International Business Machines CorporationInventors: Frank Daniel Egitto, Luis Jesus Matienzo, Bruce Otho Morrison, Jr.
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Patent number: 6261420Abstract: Pulsed light is irradiated to an amorphous base material, to produce therein one or more single crystals or polycrystals having nonlinear characteristic advantageous for light communication and laser technique. An external field such as electric field or magnetic field may be applied to the amorphous material, or a seed crystal or crystalline substrate may be used to promote crystallization from a contact interface between the amorphous material and the seed crystal or crystalline substrate.Type: GrantFiled: September 16, 1999Date of Patent: July 17, 2001Assignee: Central Glass Company, LimitedInventors: Yoshinori Kubota, Natsuya Nishimura
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Patent number: 6241893Abstract: An amorphous potassium aluminosilicate filtration media which may be mixed with activated carbon filters water to remove oxygen, chlorines, hardness, alkalinity, ammonia, hydrogen, hydrogen sulfide, sodium sulfite and other contaminants. The particular sodium aluminosilicate is a porous amorphous material formed under ultraviolet light or sunlight to produce pore sizes of 60 Å to 250 Å at ambient temperatures (20° C.-35° C.) and low relative humidity (5%-20%). The media is initially formed as a microporous primarily amorphous gel containing Na2O, Al2O3, SiO2 and H2O. The sodium therein is displaced by potassium, whereby the filter removes impurities from water without introducing sodium. The potassium aluminosilicate may be a second stage filter to a first stage filter composed of a strong base anion media charged with potassium carbonate and/or bicarbonate.Type: GrantFiled: March 18, 1997Date of Patent: June 5, 2001Inventor: Ehud Levy
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Patent number: 6232363Abstract: A method of forming a diffusion barrier on an article of a polymer blend of (i) a high surface energy polymer and (ii) a low surface energy polymer. Most commonly the low surface energy polymer is an organosilicon polymer, as a polysilane or a polysiloxane. The surface of the article is exposed to ozone and ultraviolet radiation to form a diffusion barrier.Type: GrantFiled: April 25, 2000Date of Patent: May 15, 2001Assignee: International Business Machines CorporationInventors: Frank Daniel Egitto, Luis Jesus Matienzo, Bruce Otho Morrison, Jr.
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Patent number: 6207024Abstract: A method of producing phosphorus in which a mixture of phosphoric acid and carbon reductant is exposed to microwaves at a power level sufficient to heat the mixture to a temperature at which phosphorous is produced. This method can be carried out at lower temperatures than conventional phosphorous production and does not give rise to the solid waste normally formed in conventional phosphorous production. The phosphorus thus formed can be converted back to phosphoric acid, thus effecting purification of the phosphoric acid.Type: GrantFiled: October 4, 1999Date of Patent: March 27, 2001Assignee: Astaris LLCInventor: Richard R. Severns
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Patent number: 6204305Abstract: A method of forming a diffusion barrier on an article of a polymer blend of (i) a high surface energy polymer and (ii) a low surface energy polymer. Most commonly the low surface energy polymer is an organosilicon polymer, as a polysilane or a polysiloxane. The surface of the article is exposed to ozone and ultraviolet radiation to form a diffusion barrier.Type: GrantFiled: August 30, 1999Date of Patent: March 20, 2001Assignee: International Business Machines CorporationInventors: Frank Daniel Egitto, Luis Jesus Matienzo, Bruce Otho Morrison, Jr.