Abstract: A coating includes a first layer of a ceramic alloy and a second layer disposed on the first layer and including carbon. The coating has a hardness of from 10 to 20 GPa and a coefficient of friction of less than or equal to 0.12. A method of coating a substrate includes cleaning the substrate, forming the first layer on the substrate, and depositing the second layer onto the first layer to thereby coat the substrate.

Abstract: A novel TCO coating and its manufacturing method are disclosed. The TCO coating of the present invention consists of titanium oxide, silicon oxide and metal. The TCO coating is manufactured according to electromagnetic field simulation software basing on the Maxwell Equations. Because the manufacturing method (including steam plating and sputter plating) of the present invention may be carried out under the room temperature, base boards that are made of polymer and that can not withstand high temperatures may be used and hence base boards may have wider applications. Also, less time is needed in the production, production cost is lowered and mass-production may be achieved.

Abstract: A method and system are provided for integrated substrate processing in Cu metallization. The method includes providing a substrate in a vacuum processing tool containing a plurality of processing systems configured to process the substrate and a substrate transfer system configured to transfer the substrate under vacuum conditions between the plurality of processing systems, and performing an integrated deposition process on the substrate. The plurality of processing systems and the substrate transfer system maintain a base pressure of background gases at 6.8×10?8 Ton or lower, preferably 5×10?8 Torr or lower, during the integrated deposition process. According to one embodiment, the integrated process includes depositing a barrier metal layer on the substrate, and depositing a Cu layer on the barrier metal layer. According to another embodiment, the integrated process further includes depositing a Ru layer on the barrier metal layer, and depositing a Cu layer on the Ru layer.

Abstract: A process for modifying a surface of a substrate is provided that includes supplying electrons to an electrically isolated anode electrode of a closed drift ion source. The anode electrode has an anode electrode charge bias that is positive while other components of the closed drift ion source are electrically grounded or support an electrical float voltage. The electrons encounter a closed drift magnetic field that induces ion formation. Anode contamination is prevented by switching the electrode charge bias to negative in the presence of a gas, a plasma is generated proximal to the anode electrode to clean deposited contaminants from the anode electrode. The electrode charge bias is then returned to positive in the presence of a repeat electron source to induce repeat ion formation to again modify the surface of the substrate. An apparatus for modification of a surface of a substrate by this process is provided.

Abstract: The present invention relates to a protective enclosure for an ion gun and to a device for depositing materials through vacuum evaporation comprising such an enclosure and methods of using each. According to the invention, the protective enclosure comprises a side wall intended to surround said ion gun, and an open upper end, said protective enclosure having a longitudinal axis, a truncated tube shape on its open upper end resulting from an inclined surface relative to said longitudinal axis, and having a lower part and an upper part.

Abstract: Probe structures and fabrication techniques are described. The described probe structures can be used as probes for various applications such as conductance measurement probes, field emitter probes, nanofabrication probes, and magnetic bit writing or reading probes.

Abstract: High energy heavy ions are used to produce free space regions by sputtering the high energy beam through a mask onto a substrate. The invention also includes a method of focusing the high energy beam with a beam focusing system. The invention is in part based on an experiment in which 900 keV gold ions were used to sputter aluminum, copper, silicon and silver. The results demonstrate the possibility that high energy heavy ions could be used to fabricate microstructures in selected metals and silicon in a single step process.

Abstract: A method for forming a protective bilayer on a magnetic read/write head or magnetic disk. The bilayer is formed as an adhesion enhancing underlayer and a protective diamond-like carbon (DLC) overlayer. The underlayer is formed of an aluminum or alloyed aluminum oxynitride, having the general formula AlOxNy or MezAlOxNy where Mez symbolizes Tiz, Siz or Crz and where x, y and z can be varied within the formation process. By adjusting the values of x and y the adhesion underlayer contributes to such qualities of the protective bilayer as stress compensation, chemical and mechanical stability and low electrical conductivity. Various methods of forming the underlayer are provided, including reactive ion sputtering, plasma assisted chemical vapor deposition, pulsed laser deposition and plasma immersion ion implantation.

Abstract: The present invention relates to a method for manufacturing a transparent oxide electrode using an electron beam post-treatment. The method for manufacturing a transparent oxide electrode comprises the steps of: (a) forming a thin film for the transparent anode on a substrate; and (b) irradiating an electron beam to the surface of the thin film for the transparent oxide electrode. The method of the present invention is characterized in that no additional heat treatment process is performed after step (a). The method for manufacturing a transparent oxide electrode according to the present invention does not perform a high-temperature heat treatment process but rather performs a low-temperature electron beam irradiation process as a post-treatment, thus obtaining a transparent oxide electrode having excellent characteristics in case where the substrate is made of glass, Pyrex, quartz or even a polymer material which has a low resistance against heat.

Abstract: A colored device casing includes a base, a color layer and a bonding layer. The base has at least one smooth region. The bonding layer is positioned between the base and the color layer and bonds the base and color layer together. A portion of the color layer corresponding to and located over the smooth region has a value of L* in a range from about 81.43 to about 83.43, a value of a* in a range from about 0.30 to about 1.30 and a value of b* in a range from about 2.11 to about 3.11 according to the Commission Internationale del'Eclairage LAB system. A surface-treating method for fabricating the colored casing is also provided.

Abstract: A bio-implant having a screw body selectively formed with nanoporous channels structure in a spiral groove and the method of making the same are disclosed. Nanoporous channels structure formed into the spiral groove of the bio-implant is carried out by the heat treatment in vacuum firstly and anodic treatment secondly. Thereafter, bioactive material is filled into the nanoporous and deposited on the implant surface by an electro-deposition process so as to increase the bioactivity and biocompatibility of the bio-implant.

Abstract: The method for depositing a film of the present invention comprises the first film deposition step of depositing a first film 103 having hardness higher than hardness of a substrate 101 on a surface of the substrate 101, the first irradiation step of irradiating particles having energy on the first film 103, and the second film deposition step of depositing an oil-repellent film 105 on a surface of the first film 103 subjected to the first irradiation step. According to the present invention, a method for depositing a film enabling production of an oil-repellent substrate comprising an oil-repellent film having abrasion resistance of a practically sufficient level can be provided.

Abstract: A solar cell module layer stack is described. The layer stack includes a doped silicon wafer substrate, a further layer of the substrate or deposited on the substrate, wherein the further layer is doped for generation of a p-n-junction with the doped silicon wafer substrate; and a first sputtered passivation layer deposited on the doped silicon wafer substrate or the further layer, wherein the passivation layer is selected from the group consisting of: an aluminum-containing oxide layer, an aluminum-containing oxynitride layer, and mixtures thereof; and wherein the passivation layer being plasma treated under a hydrogen-containing atmosphere and/or wherein the layer stack further comprises a hydrogen-containing cap layer on the passivation layer.

Abstract: This invention relates an ion beam source (10) for use with a non-electrical conducting target (14) including a grid (13) for extracting ions and a power supply for supplying pass power to the grid (13) to extract the ions.

Abstract: Solar cells and methods for their manufacture are disclosed. An exemplary method may include providing a semiconductor substrate and introducing dopant atoms to a front surface of the substrate. The substrate may be annealed to drive the dopant atoms deeper in the substrate to produce a p-n junction while also forming front and back passivation layers. A reflective surface is sputtered on the back surface of the solar cell. It protects and generates hydrogen to passivate one or more substrate-passivation layer interfaces at the same time as forming an anti-reflective layer on the front surface of the substrate. Fire-through of front and back contacts as well as metallization with contact connections may be performed in a single co-firing operation. Associated solar cells are also provided.

Abstract: The present invention provides a method for extracting a charged particle beam from a charged particle source. A set of electrodes is provided at the output of the source. The potentials applied to the electrodes produce a low-emittance growth beam with substantially zero electric field at the output of the electrodes.

Abstract: Method and apparatus for processing a substrate with a beam of energetic particles. The beam is directed from a source through a rectangular aperture in a shield positioned between the source and substrate to a treatment zone in a plane of substrate movement. Features on the substrate are aligned parallel to a major dimension of the rectangular aperture and the substrate is moved orthogonally to the aperture's major dimension. The beam impinges the substrate through the aperture during movement. The substrate may be periodically rotated by approximately 180° to reorient the features relative to the major dimension of the rectangular aperture. The resulting treatment profile is symmetrical about the sides of the features oriented toward the major dimension of the rectangular aperture.

Abstract: Disclosed is an electronic component-embedded printed circuit board, which includes an insulating base, an insulating layer formed on one surface of the insulating base, an electronic component embedded in the insulating layer so that an active surface of the electronic component having a connection terminal faces the insulating base, a trench formed in the insulating base to expose the connection terminal, and a connection pattern formed and embedded in the trench, and in which the embedded connection pattern is finely formed by an imprinting process and is connected to the connection terminal of the electronic to component, thus obviating a need for an additional redistribution layer and reducing the manufacturing cost. A method of manufacturing such a printed circuit board is also provided.

Abstract: A CPP-GMR spin valve having a CoFe/NiFe composite free layer is disclosed in which Fe content of the CoFe layer ranges from 20 to 70 atomic % and Ni content in the NiFe layer varies from 85 to 100 atomic % to maintain low Hc and ?S values. A small positive magnetostriction value in a Co75Fe25 layer is used to offset a negative magnetostriction value in a Ni90Fe10 layer. The CoFe layer is deposited on a sensor stack in which a seed layer, AFM layer, pinned layer, and non-magnetic spacer layer are sequentially formed on a substrate. After a NiFe layer and capping layer are sequentially deposited on the CoFe layer, the sensor stack is patterned to give a sensor element with top and bottom surfaces and a sidewall connecting the top and bottom surfaces. Thereafter, a dielectric layer is formed adjacent to the sidewalls.

Abstract: The invention relates to a substrate (1), especially a glass substrate, coated with at least one dielectric thin-film layer deposited by sputtering, especially magnetically enhanced sputtering and preferably reactive sputtering in the presence of oxygen and/or nitrogen, with exposure to at least one ion beam (3) coming from an ion source (4), characterized in that said dielectric layer exposed to the ion beam is crystallized.

Abstract: A method of coating a substrate including loading a calcium phosphate substance at a first crystallinity with a therapeutic agent; depositing the loaded calcium phosphate substance at the first crystallinity onto a least a portion of the substance; loading a calcium phosphate substance at a second, lower, crystallinity with a therapeutic agent; and depositing the loaded calcium phosphate substance at the second crystallinity onto the deposited loaded calcium phosphate substance at the first crystallinity to control and sustain a long-term osseointegration response and to control the release rate of the therapeutic substance from the calcium phosphate substance.

Abstract: A resin composition (2) such as a photo-curable resin composition or a heat curable or thermosetting resin composition is placed on an optical substrate (1). A printing pressure is applied to the side of the resin composition (2) of the optical substrate (1) with the resin composition (2) by means of an extra-flat pressing plate having a flatter plane than the optical substrate (1). The resin composition is cured by utilizing light or a temperature change to form a composite substrate. A thin film (4) such as a functional inorganic optical film, a dielectric multilayered optical thin film, or an optical functional metallic film is stacked on the composite substrate, for example, by low-temperature sputtering or ion beam sputtering to form an optical component such as a reflection mirror, a beam splitter, a band-pass filter, a band-stop filter, and an edge filter.

Abstract: A superconducting article includes a substrate having a biaxially textured surface, and an epitaxial biaxially textured superconducting film supported by the substrate. The epitaxial superconducting film includes particles of Ba2RENbO6 and is characterized by a critical current density higher than 1 MA/cm2 at 77K, self-field. In one embodiment the particles are assembled into columns. The particles and nanocolumns of Ba2RENbO6 defects enhance flux pinning which results in improved critical current densities of the superconducting films. Methods of making superconducting films with Ba2RENbO6 defects are also disclosed.

Abstract: A method and apparatus for depositing a CIGS film and a buffer layer on to a flexible substrate. Deposition of the CIGS film occurs in monolayers due to rotation of the flexible substrate. A roll of substrate is placed on a loading roller within a flexible solar cell coating apparatus. A section of the substrate unwinds and advances around a rotating drum. The CIGS film is deposited as the section is rotated and heated. Deposition is a hybrid sputtering and evaporation process. Deposition continues until a predetermined thickness is met and the roll is completely coated. The buffer layer is then deposited on to the CIGS film. The deposition of the CIGS film utilizes elemental selenium and sodium doped indium. The elemental selenium may be ionized to increase monolayer reaction reactivity. The buffer layer is a non-toxic ZnS-O layer.

Abstract: Thin film processing systems and methods are provided having a moving deposition sensor capable of translation and/or rotation in a manner that exposes the sensor to thin film deposition environments in a flux region substantially the same as the deposition environments experienced by one or more moveable substrates during a selected deposition period. In one embodiment, a thin film monitoring and control system is provided wherein one or more moveable substrates and a moveable deposition sensor are moved along substantially coincident trajectories in a flux region of a thin film deposition system for a selected deposition period. Systems and methods of the present invention may include SC-cut quartz crystal microbalance sensors capable of excitation of at least two different resonant modes.

Abstract: Method and apparatus for processing a substrate with a beam of energetic particles. The beam is directed from a source through a rectangular aperture in a shield positioned between the source and substrate to a treatment zone in a plane of substrate movement. Features on the substrate are aligned parallel to a major dimension of the rectangular aperture and the substrate is moved orthogonally to the aperture's major dimension. The beam impinges the substrate through the aperture during movement. The substrate may be periodically rotated by approximately 180° to reorient the features relative to the major dimension of the rectangular aperture. The resulting treatment profile is symmetrical about the sides of the features oriented toward the major dimension of the rectangular aperture.

Abstract: A plasma gun of the present invention includes: a container having a plasma outflow opening; a cathode (18) which is disposed inside the container to generate plasma by discharge; an auxiliary anode which is disposed to be able to be located between the plasma outflow opening and the cathode and is able to receive the plasma generated by the cathode; an exhaust valve for exhausting air from and sealing an inside of the container; and a plasma flow-out preventing/allowing device which prevents the plasma, having been generated by the discharge of the cathode, from flowing out from the plasma outflow opening and allows the plasma to flow out from the plasma.

Abstract: A coating process to infill high aspect-ratio vias and trenches in semiconductor substrates with dense boron for the production of neutron detectors and other devices uses a vacuum cathodic arc or other source of fully ionized boron plasma. Biasing of the substrate is used to impart energies to the plasma ions directing them toward the substrate, while repulsing the electrons. The full ionization produced by the source allows control of the energies of the boron ions by means of the bias voltage. The bias is alternated between coating deposition at low ion energies and sputtering of already coated material by energetic ions. Most of the sputtered material comes off the substrate top surface and between the trenches or vias and much of it is redeposited, thereby contributing to the infill. The process is suitable for carbon, boron or similar light elements, and is of particular interest for 10B, an element having exceptionally high thermal neutron cross-section.

Abstract: A transducer includes magnetic material formed on a substrate that is shaped to include a trailing edge, a leading edge and a pair of opposing sidewalls extending between the trailing edge and the leading edge. A layer of protective material is positioned in contact with each of the pair of sidewalls of the shaped magnetic material. Backfill material surrounds the protective material on each of the pair of sidewalls of the shaped magnetic material.

Abstract: Method includes providing a superalloy substrate such as a turbine disk, a turbine seal, a turbine blade, a turbine nozzle, a turbine shroud, or a turbine frame or case having an under platform or non-gas path region; and providing a predominantly gamma-prime nickel aluminide intermetallic ductile corrosion and oxidation resistant coating disposed on at least a portion of the substrate. The coating comprises from about 15 to about 30 atomic % aluminum, up to about 20 atomic % chromium, optionally, up to about 30 atomic % of at least one platinum group metal, optionally, up to about 4 atomic % of at least one reactive element, and optionally, up to about 15 atomic % of at least one strengthening element, and a balance being essentially nickel or nickel and at least one of cobalt, iron, or cobalt and iron. A coating precursor composition may be applied to the substrate before or after optional plating with one or more platinum group metals.

Abstract: The present invention relates to a method for manufacturing an implant, in particular an intraluminal endoprosthesis, with a body containing metallic material, preferably iron. The method includes the following steps to control degradation of the implant: (i) providing the body of the implant; and (ii) tribochemically treating at least part of the body surface by means of beam particles. An implant produced in this way is also described.

Abstract: The present invention provides a high-temperature ionic state fluidized bed compound crystallization technology and an internal reactor structure thereof. The principle of the present invention is that reaction gas is effected by a group of high-frequency external magnetic fields and forms the high-temperature gaseous ion in the first quartz vacuum tube, then forms ion deposition diffusion in the second quartz vacuum tube preheated at constant temperature. As a result, other high-temperature gaseous ions except the silicon hydride are decomposed, rapidly deposited and crystallized in the ion diffusion chamber. And the un-decomposed silicon hydride gas is directly poured into the surface of the silicon heating body of the compound fluidized bed by the static negative high-voltage quartz spray hole to decompose and crystallize, or crystallize by a way of fluid state in the arched heating quartz tube communicating with the top of two quartz reaction furnaces.

Abstract: Methods of processing a substrate in a PVD chamber comprising a target, a substrate and a process gas at a pressure sufficient to cause ionization of a substantial portion of species sputtered from the target are described. A capacitively coupled high density plasma is maintained by applying very high frequency power to the target. Sputtered material is ionized in the plasma and accelerated toward the substrate by a high frequency bias power applied to the substrate. The microstructure of the resultant film is controlled by modifying one or more of the pressure and the high frequency bias power.

Abstract: A method for forming a protective bilayer on a magnetic read/write head or magnetic disk. The bilayer is formed as an adhesion enhancing underlayer and a protective diamond-like carbon (DLC) overlayer. The underlayer is formed of an aluminum or alloyed aluminum oxynitride, having the general formula AlOxNy or MezAlOxNy where Mez symbolizes Tiz, Siz or Crz and where x, y and z can be varied within the formation process. By adjusting the values of x and y the adhesion underlayer contributes to such qualities of the protective bilayer as stress compensation, chemical and mechanical stability and low electrical conductivity. Various methods of forming the underlayer are provided, including reactive ion sputtering, plasma assisted chemical vapor deposition, pulsed laser deposition and plasma immersion ion implantation.

Abstract: The present invention provides an inductively coupled, magnetically enhanced ion beam source, suitable to be used in conjunction with probe-forming optics to produce an ion beam without kinetic energy oscillations induced by the source.

Abstract: A process for production of conductive catalyst particles, a process for production of a catalyst electrode capable of gas diffusion, an apparatus for production of conductive catalyst particles, and a vibrating apparatus. The process can effectively and uniformly coat the particles of a conductive powder with a catalytic substance.

Abstract: An optical element (1a, 1b) for reflecting UV radiation at an operating wavelength below 250 nm, preferably at 193 nm, which has a substrate (2a, 2b), a reflective layer (3a, 3b) made of aluminum superimposed on the substrate (2a, 2b). The reflective aluminum layer (3a, 3b) is not transparent to UV radiation and is (111)-plane oriented. The reflective optical element (1a, 1b) has a reflectivity of more than 85%, preferably of more than 88%, and even more preferably of more than 92%, in a range of incident angles of at least 10°, preferably of at least 15°, at the operating wavelength. Also disclosed is an optical element having a reflective layer made from a material having a melting point higher than that of aluminum, as well as methods for producing such optical elements, and optical arrangements incorporating such optical elements.

Abstract: The catalyst-coated membrane has a proton exchange membrane with two opposite sides, and a catalyst coating applied directly to one of the two sides, the catalyst coating having a plurality of openings defined therethrough and scattered thereacross, the openings defining passages to the proton exchange membrane in which corresponding electro-chemical active surfaces of the catalyst coating are exposed. The openings can be defined in the catalyst coating after application thereof or during application thereof.

Abstract: A hard bias (HB) structure for longitudinally biasing a free layer in a MR sensor is disclosed that includes a mildly etched seed layer and a hard bias (HB) layer on the etched seed layer. The HB layer may contain one or more HB sub-layers stacked on a lower sub-layer which contacts the etched seed layer. Each HB sub-layer is mildly etched before depositing another HB sub-layer thereon. The etch may be performed in an IBD chamber and creates a higher concentration of nucleation sites on the etched surface thereby promoting a smaller HB average grain size than would be realized with no etch treatments. A smaller HB average grain size is responsible for increasing Hcr in a CoPt HB layer to as high as 2500 to 3000 Oe. Higher Hcr is achieved without changing the seed layer or HB material and without changing the thickness of the aforementioned layers.

Abstract: Disclosed herein is a nanostructured thin film. The nanostructured thin film comprises a nanoparticle layer and a number of micro-undulated surfaces formed on the nanoparticle layer. The two micro-undulated structures of the nanostructured thin film are uniformly introduced over a large area. This configuration makes it easy to control the surface properties of the nanostructured thin film. Therefore, the nanostructured thin film can be widely applied to a variety of devices. Also disclosed herein is a method for controlling the surface properties of the nanostructured thin film.

Abstract: Systems, methods and apparatus for regulating ion energies in a plasma chamber are disclosed. An exemplary system includes an ion-energy control portion, and the ion-energy control portion provides at least one ion-energy control signal responsive to at least one ion-energy setting that is indicative of a desired distribution of energies of ions bombarding a surface of a substrate. A controller is coupled to the switch-mode power supply, and the controller provides at least two drive-control signals. In addition, a switch-mode power supply is coupled to the substrate support, the ion-energy control portion and the controller. The switch-mode power supply includes switching components configured to apply power to the substrate responsive to the drive signals and the ion-energy control signal so as to effectuate the desired distribution of the energies of ions bombarding the surface of the substrate.

Abstract: A superhydrophobic surface and method for forming same. In one embodiment, the method has the steps of preparing a surface of a substrate of a first material, modifying the surface through an etching process to generate a plurality of nucleation sites, and depositing a source material of a second material on the modified surface by using glancing angle deposition to form a plurality of nano-rods corresponding to the plurality of nucleation sites.

Abstract: Nanorings and methods for fabrication thereof, preferably of gold and tungsten, involve deposition on silicon wafer and/or glass substrates using random incidence sputtering deposition and thermal vapor deposition techniques to produce two dimensional tungsten nanotriangle and gold nanoring arrays on the silicon wafer substrates with the size of resulting equilateral tungsten nanotriangles being about 100 nm per side and being spaced about 210 nm from each other, and with the gold nanorings being about 220 nm in diameter, 40 nm wide, 10 nm thick and being spaced about 560 nm from each other.

Abstract: A method and apparatus for manufacturing magnetic storage media is provided. A structural substrate is coated with a magnetically susceptible material, and a patterned resist layer is formed over the magnetically susceptible material. Atom groups are directed toward the substrate, penetrating the resist and implanting into the magnetically susceptible layer. Thick portions of the resist prevent implantation in some areas to form a pattern of magnetic properties on the substrate. Energy and composition of the atom groups, thickness and hardness of the resist, and lattice energy of the magnetically susceptible material may all be adjusted to yield desired fragmentation and implantation of the atom groups, including in some embodiments mere impact on the surface without implanting. A protective layer and a lubricating layer are formed over the patterned magnetically susceptible layer.

Abstract: A process for forming an electronic device includes forming a first layer over a substrate, wherein the first layer includes an organic layer, and depositing a second layer over the substrate after forming the first layer, wherein depositing the second layer is performed using ion beam sputtering. In another embodiment, a process for forming an electronic device includes placing a workpiece within a depositing chamber of a depositing apparatus, wherein the workpiece includes a substrate and an organic layer overlying the workpiece. The process includes generating a plasma within a plasma-generating chamber of the depositing apparatus, wherein the plasma is not in direct contact with the workpiece. The process also includes sending an ion beam from the plasma-generating chamber towards a target within the depositing chamber, wherein the target includes a material, and depositing a layer of the material over the organic layer.

Abstract: A method for producing a mold having a fine groove-ridge pattern on the surface thereof is disclosed. The method includes: a release layer forming step of forming, on a surface of a Si original plate having a groove-ridge pattern, a release layer made of a metal film containing a metal having an ionization tendency lower than that of hydrogen (for example, at least one metal selected from the group consisting of Pt, Os, Ir, Au, Ru and Pd); an electroforming step of electroforming, after the release layer has been formed, a metal substrate forming a mold; and a releasing step of releasing a duplicated plate including the release layer and the metal substrate from the Si original plate after the electroforming step.

Abstract: The invention is directed to highly reflective optical elements having an amorphous MgAl2O4?SiO2 coating with fluoride enhancements inserted and sealed by dense smooth SiO2 layers, and to a method for preparing such elements using energetic deposition techniques and the spinel crystalline form of MgAl2O4 as the source of the amorphous MgAl2O4 coating, The coating and the method described herein can be used to make highly reflective mirrors, and can also be applied to beamsplitters, prisms, lenses, output couplers and similar elements used in <200 nm laser systems.

Abstract: A boride film is deposited on a substrate through an opening portion a shield member located between the substrate and a target by means of a sputtering method. The shield member is arranged so as to shield between an erosion region of the target and the substrate. A distribution of plasma density in a space between the substrate and the target is set in such a manner that a plasma density in a region in which the opening portion is located becomes higher than a plasma density in a region shielded by the shield member.

Abstract: An omni-directional reflector having a transparent conductive low-index layer formed of conductive nanorods and a light emitting diode utilizing the omni-directional reflector are provided. The omni-directional reflector includes: a transparent conductive low-index layer formed of conductive nanorods; and a reflective layer formed of a metal.

Abstract: A method for forming a magnetic write head using a damascene process that does not form voids in the magnetic structure. An opening is formed in an alumina layer, the opening being configured to define a trench. Then a first layer of magnetic material is deposited into the trench. A CMP process is then performed to remove any voids that have formed in the first magnetic layer. Then a second layer of magnetic material is deposited over the first layer of magnetic material. In another embodiment of the invention, a opening is formed in the alumina layer, and a first layer of magnetic material is electroplated into the opening. A thin layer of non-magnetic material is then deposited, and a second layer of magnetic material is deposited over the thin layer of non-magnetic material. The thin layer of alumina advantageously provides a laminate structure that avoids data erasure.